JPH06260572A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH06260572A
JPH06260572A JP7126093A JP7126093A JPH06260572A JP H06260572 A JPH06260572 A JP H06260572A JP 7126093 A JP7126093 A JP 7126093A JP 7126093 A JP7126093 A JP 7126093A JP H06260572 A JPH06260572 A JP H06260572A
Authority
JP
Japan
Prior art keywords
semiconductor device
metal plate
heat dissipation
printed board
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7126093A
Other languages
Japanese (ja)
Inventor
Tatsuya Otaka
達也 大高
Yasuharu Kameyama
康晴 亀山
Takashi Suzumura
隆志 鈴村
Shigeo Hagitani
重男 萩谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP7126093A priority Critical patent/JPH06260572A/en
Publication of JPH06260572A publication Critical patent/JPH06260572A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3421Leaded components

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve heat dissipation while the generation of package crack, the increase of cost, and the enlargement of equipment are restrained, by conducting the heat generated from a semiconductor device to a printed board via a metal plate excellent in thermal conductivity. CONSTITUTION:The other surface of a copper plate 7 is coated with adhesive agent excellent in thermal conductivity, and the copper plate 7 of a semiconductor device is bonded to the surface of a printed board 9. Leads 3 are electrically connected with wirings of the printed board 9. The heat generated from a semiconductor element 1 is conducted to the printed board 9 on the periphery of the semiconductor device from mold resin 4 via the copper plate 7. Thereby the effective heat dissipation area can be increased without adding heat dissipation fins to the semiconductor device, and the heat dissipation capability of the semiconductor device can be improved. Since the conventional package structure is applicable, package crack is not generated, and reliability can be improved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置に関し、特
に、パッケージクラックの発生,コストアップを抑制し
ながら半導体素子の発熱に対する放熱性を高めた半導体
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device which has improved heat radiation performance for heat generation of a semiconductor element while suppressing generation of package cracks and cost increase.

【0002】[0002]

【従来の技術】最近、高消費電力型の半導体素子が急増
している。高消費電力型の半導体素子は1〜数w程度の
発熱を伴うため、これを搭載するパッケージに対し、発
熱を効率良く、しかも低コストで放熱することができる
構造が要求されている。
2. Description of the Related Art Recently, the number of high power consumption type semiconductor devices has increased rapidly. Since a high power consumption type semiconductor element is accompanied by heat generation of about 1 to several watts, a package in which the semiconductor element is mounted is required to have a structure capable of efficiently radiating heat generation and at low cost.

【0003】従来、このような放熱構造を採用した半導
体装置として、例えば、図2,及び図3に示されるもの
がある。
Conventionally, as a semiconductor device adopting such a heat dissipation structure, there is one shown in FIGS. 2 and 3, for example.

【0004】図2に示される半導体装置は、リードフレ
ームのリード3と、当該リード3の上部に絶縁性接着剤
2を介して貼付された金属板4と、当該金属板4の下面
中央部に素子用接着剤6を介して貼付された半導体素子
1と、半導体素子1とリード3を接続するボンディング
ワイヤ11と、リード3の一部(アウターリード部)を
残し、且つ、金属板4の上面が露出するように、これら
を封止するモールド樹脂5より構成されている。
The semiconductor device shown in FIG. 2 has leads 3 of a lead frame, a metal plate 4 attached to the top of the leads 3 via an insulating adhesive 2, and a central portion of the lower surface of the metal plate 4. The semiconductor element 1 attached via the element adhesive 6, the bonding wire 11 connecting the semiconductor element 1 and the lead 3, and a part (outer lead portion) of the lead 3 are left, and the upper surface of the metal plate 4 is left. Is formed of a molding resin 5 that seals these so as to be exposed.

【0005】一方、図3に示される半導体装置は、金属
板4をモールド樹脂5の内部に埋入させて構成されてい
る。
On the other hand, the semiconductor device shown in FIG. 3 is constructed by embedding a metal plate 4 inside a molding resin 5.

【0006】このような構成を有する半導体装置は、半
導体素子1の発熱を金属板4を介してモールド樹脂5、
すなわち、パッケージ全体に伝熱し、パッケージ表面と
空気との熱交換によって放熱するようにしている。
In the semiconductor device having such a structure, the heat generated in the semiconductor element 1 is transmitted through the metal plate 4 to the mold resin 5,
That is, heat is transferred to the entire package and is radiated by heat exchange between the package surface and air.

【0007】しかし、何れの半導体装置も、密着性の低
い金属板を大面積にわたってモールド樹脂に埋め込んで
構成されているため、金属板のエッヂを中心にクラック
が発生し易く、信頼性の低いものになっている。
However, in any of the semiconductor devices, since a metal plate having low adhesion is embedded in a molding resin over a large area, cracks are likely to occur around the edge of the metal plate and the reliability is low. It has become.

【0008】そこで、パッケージそのものの構造は変え
ず、パッケージの直上にその面積より大きい放熱面積の
有する放熱フィンを伝熱性接着層等を介して取り付け、
これによって放熱効果を高めた半導体装置が提案されて
いる。この半導体装置によれば、パッケージそのものの
構造を変えていない、すなわち、モールド樹脂の内部に
金属板を配置していないため、パッケージの信頼性を低
下させることなく放熱性を向上させることができる。
Therefore, the structure of the package itself is not changed, and a radiating fin having a radiating area larger than that area is attached directly above the package through a heat conductive adhesive layer or the like.
As a result, a semiconductor device having improved heat dissipation effect has been proposed. According to this semiconductor device, since the structure of the package itself is not changed, that is, the metal plate is not arranged inside the mold resin, the heat dissipation can be improved without lowering the reliability of the package.

【0009】[0009]

【発明が解決しようとする課題】しかし、従来の放熱フ
ィンを取り付けた半導体装置によると、放熱フィンが複
雑な凸凹形状になっているため、製品コストとして非常
に大きくなり、全体としての製造コストが高くなるとい
う問題がある。また、放熱フィンの高さ分だけ厚さが増
加するため、装置が大型化してプリント基板への実装密
度が小さくなるという問題も生じる。
However, according to the conventional semiconductor device having the radiation fins attached, since the radiation fins have a complicated uneven shape, the product cost becomes very large, and the manufacturing cost as a whole increases. There is the problem of becoming expensive. Further, since the thickness of the heat radiation fins is increased by the height of the heat radiation fins, there is a problem that the device becomes large and the mounting density on the printed circuit board becomes small.

【0010】従って、本発明の目的はパッケージクラッ
クの発生,コストアップ,及び装置の大型化を抑制しな
がら放熱性を向上させることができる半導体装置を提供
することである。
Therefore, an object of the present invention is to provide a semiconductor device capable of improving heat dissipation while suppressing the occurrence of package cracks, cost increase, and size increase of the device.

【0011】[0011]

【課題を解決するための手段】本発明は上記問題点に鑑
み、パッケージクラックの発生,コストアップ,及び装
置の大型化を抑制しながら放熱性を向上させるため、モ
ールド樹脂の底面に良熱伝導性金属板を設けた半導体装
置を提供するものである。
In view of the above problems, the present invention improves the heat dissipation while suppressing the generation of package cracks, the cost increase, and the size increase of the device. A semiconductor device provided with a conductive metal plate.

【0012】上記良熱伝導性金属板は、熱伝達率が良
く、コスト面でも有利なCu系合金を用いることが好ま
しく、その両面にはNiめっき,或いはNi−Sn合金
めっき等が施されることが好ましく、更にその両面に設
けられた良熱伝導性接着剤を介してその第1の面をモー
ルド樹脂の底面に、また、第2の面をプリント基板上に
それぞれ接着されることが好ましい。このような構成で
は、半導体素子からの発熱をプリント基板に伝熱できる
ようになり、既存のパッケージ構造で、尚且つ、放熱フ
ィンを取り付けずに実質的な放熱面積を増大させること
ができる。その結果、コストアップ,及び装置の大型化
を抑制しながら放熱性を向上させることができる。
The above-mentioned good heat conductive metal plate is preferably made of a Cu-based alloy which has a good heat transfer coefficient and is advantageous in terms of cost. Both surfaces thereof are plated with Ni or Ni-Sn alloy. It is preferable that the first surface is adhered to the bottom surface of the mold resin and the second surface is adhered to the printed circuit board via the good heat conductive adhesives provided on both surfaces thereof. . With such a configuration, the heat generated from the semiconductor element can be transferred to the printed board, and the substantial heat radiation area can be increased in the existing package structure without attaching the heat radiation fin. As a result, it is possible to improve heat dissipation while suppressing an increase in cost and an increase in size of the device.

【0013】ここで、上記良熱伝導性金属板の厚さは、
モールド樹脂の半導体素子からの熱を効率良く横方向に
伝熱するためには、Cu系の場合、0.05mm以上で
あることが必要であり、理想的には0.2mmとするこ
とが好ましい。サイズについては、モールド樹脂の底面
の大きさに略等しいものが望ましいが、半導体素子の約
2倍程度の大きさにすれば十分な役目を果たすことがで
きる。
Here, the thickness of the good heat conductive metal plate is
In order to efficiently transfer the heat from the semiconductor element of the mold resin in the lateral direction, in the case of Cu-based material, it is necessary to be 0.05 mm or more, and ideally 0.2 mm is preferable. . It is desirable that the size is substantially equal to the size of the bottom surface of the mold resin, but if it is about twice as large as the semiconductor element, it can fulfill its role sufficiently.

【0014】[0014]

【実施例】以下、本発明の半導体装置について添付図面
を参照しながら詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device of the present invention will be described in detail below with reference to the accompanying drawings.

【0015】図1には、本発明の一実施例に係る半導体
装置の断面構造が示されている。この半導体装置は、既
存のパッケージ構造を適用したもので、リードフレーム
の複数本のリード3,及びタブ部3aと、当該タブ部3
aに素子用接着剤6を介して載置された半導体素子1
と、半導体素子1とリード3のインナーリード部を接続
するボンディングワイヤ11と、リード3の一部(アウ
ターリード部)を残してこれらを被覆するモールド樹脂
5と、モールド樹脂5の底面に設けられた銅板7より構
成されている。
FIG. 1 shows a sectional structure of a semiconductor device according to an embodiment of the present invention. This semiconductor device applies an existing package structure, and includes a plurality of leads 3 of a lead frame, a tab portion 3a, and the tab portion 3.
a semiconductor element 1 mounted on a through an element adhesive 6
A bonding wire 11 for connecting the semiconductor element 1 and the inner lead portion of the lead 3; a mold resin 5 for covering a part of the lead 3 (outer lead portion) to cover them; and a bottom surface of the mold resin 5. It is composed of a copper plate 7.

【0016】銅板7は、厚さ0.2mmで、その両面に
接着性を付与するNiめっきが施され、更にその一面に
施された良熱伝導性接着剤7を介して上記モールド樹脂
5の底面に貼付されている。
The copper plate 7 has a thickness of 0.2 mm, and is plated with Ni on both sides thereof to provide adhesiveness. It is attached to the bottom.

【0017】このような構成を有する半導体装置は、図
に示すように、プリント基板9に固定されたとき、半導
体装置1の発熱を効率良く放熱することができるように
なっている。すなわち、銅板7の他面に良熱伝導性接着
剤7を施し、プリント基板9の表面に半導体装置の銅板
7を接着し、リード3とプリント基板9の配線10を電
気的に接続してプリント基板9に半導体装置を固定する
と、半導体素子1からの発熱は、モールド樹脂(パッケ
ージ全体)4,及びモールド樹脂4から銅板7を介して
半導体装置の周辺のプリント基板9に伝熱される。従っ
て、半導体装置に放熱フィンを追加しなくても実質的な
放熱面積を大きくすることができ、半導体装置の放熱性
を向上させることができる。また、パッケージ構造とし
て既存のものを適用するため、パッケージクラックの発
生がなく信頼性をも高めることができる。
As shown in the figure, the semiconductor device having such a structure can efficiently dissipate the heat generated by the semiconductor device 1 when it is fixed to the printed circuit board 9. That is, a good thermal conductive adhesive 7 is applied to the other surface of the copper plate 7, the copper plate 7 of the semiconductor device is adhered to the surface of the printed circuit board 9, and the leads 3 and the wiring 10 of the printed circuit board 9 are electrically connected and printed. When the semiconductor device is fixed to the substrate 9, heat generated from the semiconductor element 1 is transferred from the mold resin (entire package) 4 and the mold resin 4 to the printed board 9 around the semiconductor device through the copper plate 7. Therefore, the substantial heat dissipation area can be increased without adding a heat dissipation fin to the semiconductor device, and the heat dissipation of the semiconductor device can be improved. Moreover, since the existing package structure is applied, package cracks are not generated and reliability can be improved.

【0018】このように、本発明の半導体装置は半導体
装置の発熱を良熱伝導性金属板を介してプリント基板に
も伝熱するようにしたため、既存のパッケージ構造で、
尚且つ、放熱フィンを取り付けずに放熱面積を拡大する
ことができ、その結果、コストアップ,装置の大型化を
抑えながら放熱性を向上させることができる。
As described above, in the semiconductor device of the present invention, the heat generated by the semiconductor device is transferred to the printed circuit board through the metal plate having good thermal conductivity.
Further, the heat radiation area can be expanded without attaching the heat radiation fins, and as a result, the heat radiation performance can be improved while suppressing the cost increase and the size increase of the device.

【0019】[0019]

【発明の効果】以上説明したように、本発明の半導体装
置によると、モールド樹脂の底面に良熱伝導性金属板を
設けたため、パッケージ構造を変えず、且つ、放熱フィ
ンを取り付けずに放熱面積を大きくすることができ、パ
ッケージクラックの発生,コストアップ,及び装置の大
型化を抑制しながら放熱性を向上させることがてきる。
As described above, according to the semiconductor device of the present invention, since the good heat conductive metal plate is provided on the bottom surface of the molding resin, the package structure is not changed, and the heat radiation area is not attached to the heat radiation fin. The heat dissipation can be improved while suppressing the occurrence of package cracks, the cost increase, and the size increase of the device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す断面図。FIG. 1 is a sectional view showing an embodiment of the present invention.

【図2】従来の半導体装置を示す断面図。FIG. 2 is a sectional view showing a conventional semiconductor device.

【図3】従来の他の半導体装置を示す断面図。FIG. 3 is a cross-sectional view showing another conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体装置 2 絶縁
性接着剤 3 リード 4 金属
板 5 モールド樹脂 6 素子
用接着剤 7 銅板 8 良熱
伝導性接着剤 9 プリント基板 10 配線 11 ボンディングワイヤ
1 Semiconductor Device 2 Insulating Adhesive 3 Lead 4 Metal Plate 5 Mold Resin 6 Adhesive for Element 7 Copper Plate 8 Good Thermal Conductive Adhesive 9 Printed Circuit Board 10 Wiring 11 Bonding Wire

───────────────────────────────────────────────────── フロントページの続き (72)発明者 萩谷 重男 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shigeo Hagiya 3550 Kidayomachi, Tsuchiura City, Ibaraki Prefecture Hitachi Cable Ltd. System Materials Research Center

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 リードフレームのリードと半導体素子を
ワイヤボンディングし、前記リードの一部を残して前記
半導体素子をモールド樹脂で封止して構成される半導体
装置において、 前記モールド樹脂の底面に良熱伝導性金属板が設けられ
ていることを特徴とする半導体装置。
1. A semiconductor device configured by wire-bonding a lead of a lead frame and a semiconductor element and sealing the semiconductor element with a molding resin while leaving a part of the lead, wherein a bottom surface of the molding resin is good. A semiconductor device comprising a heat conductive metal plate.
【請求項2】 前記良熱伝導性金属板は、Cu系合金か
ら成り、その両面に接着性を付与するNiめっき,或い
はNi−Sn合金めっき等が施されている構成の請求項
1の半導体装置。
2. The semiconductor according to claim 1, wherein the metal plate with good thermal conductivity is made of a Cu-based alloy, and Ni plating or Ni—Sn alloy plating for imparting adhesiveness is applied to both surfaces of the metal plate. apparatus.
【請求項3】 前記良熱伝導性金属板は、その両面に設
けられた良熱伝導性接着剤を介してその第1の面を前記
モールド樹脂の底面に、また、第2の面をプリント基板
上にそれぞれ接着され、 前記リードは、前記プリント基板の所定の配線に接続さ
れている構成の請求項1,或いは2の半導体装置。
3. The good heat conductive metal plate has a first surface printed on the bottom surface of the mold resin and a second surface printed on the bottom surface of the mold resin via a good heat conductive adhesive provided on both surfaces thereof. 3. The semiconductor device according to claim 1, wherein each of the leads is adhered onto a board, and the lead is connected to a predetermined wiring of the printed board.
JP7126093A 1993-03-05 1993-03-05 Semiconductor device Pending JPH06260572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7126093A JPH06260572A (en) 1993-03-05 1993-03-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7126093A JPH06260572A (en) 1993-03-05 1993-03-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH06260572A true JPH06260572A (en) 1994-09-16

Family

ID=13455580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7126093A Pending JPH06260572A (en) 1993-03-05 1993-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH06260572A (en)

Cited By (4)

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JP2019153740A (en) * 2018-03-06 2019-09-12 三菱電機株式会社 Power semiconductor device, manufacturing method thereof, and rotating electric machine
NL2021812B1 (en) 2018-05-29 2019-12-04 Katoh Electric Co Ltd Semiconductor module
US10600725B2 (en) 2018-05-29 2020-03-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having a grooved clip frame
US10777489B2 (en) 2018-05-29 2020-09-15 Katoh Electric Co., Ltd. Semiconductor module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019153740A (en) * 2018-03-06 2019-09-12 三菱電機株式会社 Power semiconductor device, manufacturing method thereof, and rotating electric machine
NL2021812B1 (en) 2018-05-29 2019-12-04 Katoh Electric Co Ltd Semiconductor module
US10600725B2 (en) 2018-05-29 2020-03-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having a grooved clip frame
US10777489B2 (en) 2018-05-29 2020-09-15 Katoh Electric Co., Ltd. Semiconductor module
US10784186B2 (en) 2018-05-29 2020-09-22 Katoh Electric Co., Ltd. Semiconductor module
US11056422B2 (en) 2018-05-29 2021-07-06 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module

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