JPH06258829A - Photosensitive adhesive resist composition and pattern forming method using the same - Google Patents

Abstract

PURPOSE:To provide the photosensitive material which can be applied to single thin film coating and transferring and fixing a metallic mask and the like on its surface and forming a pattern image free from any defect and superior in etching resistance and high in resolution on a substrate by an exposure system in a lump without using a stepper. CONSTITUTION:The photosensitive resist composition (photosensitive material) comprises (1) an acrylic oligomer having an amide, urea, or ester group in the molecular chain; (2) an acrylic oligomer having a carboxylic or phospho group; (3) an initiator and/or a photosensitizer; and (4) and an epoxy resin. The pattern is formed by heat treating a photosensitive layer as the pretreating or posttreating step of a development processing.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming material which can be suitably used for manufacturing a large area electrode circuit element substrate, and more specifically, it can be applied uniformly on a processed substrate, It has an adhesive force that can receive and fix a pattern mask as a transfer image on the surface of the coating film, and an image can be formed in a wide area by batch exposure through the transfer mask, and the surface to be etched is exposed by a developing process. In addition, the present invention relates to a novel photosensitive adhesive resist composition capable of forming a cured image portion having excellent etching resistance.

[0002]

2. Description of the Related Art Recently, the demand for display devices using liquid crystals has increased in the display field, and the demand for large-area devices such as wall-mounted televisions has also increased.

Conventionally, in the production of an electrode circuit element substrate for a liquid crystal display device, a resist is applied on a processed substrate and a stepper is applied to the resist layer, as is found in the production of semiconductors, ICs, LSIs and the like. The desired resist image formation was carried out using this. However, in the image forming method on a resist using this stepper, when a large-area circuit element substrate such as a TFT-LCD is to be manufactured, the number of divided exposures is significantly increased, and as a result, the yield is significantly reduced. There was a problem. Further, not only the throughput but also the feasibility of the exposure apparatus itself is difficult.

Therefore, as a method for efficiently manufacturing a large-area circuit element substrate, a printing method has been proposed in which a pattern image is formed without using a stepper. (Electronic display EID 91-41 (1991)).

In this method, a pattern is formed on a conductive printing substrate by using a photosensitive resin (preparation of a printing plate), a metal mask pattern is formed by an electrodeposition method using the pattern on this substrate, and this metal thin film pattern is formed. Is transferred to the resist layer provided on the substrate to be etched to form a pattern without using a stepper.

The resist material used in this method is required to have a dimensionally stable film-forming property and a strong adhesive force capable of accepting and fixing a metal thin film pattern as a transfer mask. Further, by irradiation with actinic rays in the presence of a transfer mask, it is also required that the non-image portion that can be developed and removed and the image portion that can withstand etching processing can be formed with high resolution.

[0007]

However, conventional photoresist materials usually do not have surface tackiness at all, and a metal mask is transferred to the coating film surface,
The transfer mask cannot be fixed in a dimensionally stable manner. In order to solve this problem, it is possible to impart mask pattern transferability by newly providing an adhesive layer on the photoresist layer, but it is difficult to remove the adhesive layer uniformly during development processing. Therefore, there arises a problem that the surface to be etched cannot be exposed with high precision, or even if the developing process is performed,
There is a problem that the image resolution is reduced due to the layer structure.

On the other hand, when an ultraviolet curable adhesive or the like is used as a resist, there is a problem that the film forming property of the coating film is insufficient and the mask pattern cannot be transferred accurately.

The present inventors have previously proposed a photo-curable acrylic resin-based adhesive photoresist composition. However, the etching resistance of the cured resist image becomes insufficient depending on the type of the substrate, and the etching treatment step There was a problem that the resist image sometimes peeled from the substrate.

The problems to be solved by the present invention are excellent in that a uniform thin film can be coated on a processed substrate, sufficient film-forming ability to withstand the transfer pressure of the mask pattern and fixation of the transfer mask. It is an object of the present invention to provide a photosensitive pressure-sensitive adhesive resist composition capable of forming a coating film having a surface adhesive force and capable of forming a fine image having excellent etching resistance, and a pattern forming method using the same.

[0011]

As a result of intensive studies, the inventors of the present invention have solved the above problems.

That is, in order to solve the above problems, the present invention applies a photopolymerizable composition onto a substrate to form a photosensitive thin film layer having a surface adhesive force, the first step, the photosensitive thin film layer. The second step of transferring and fixing the light-shielding solid mask on the surface,
The third step of cross-linking and curing the photosensitive thin film layer in the mask opening by irradiating actinic rays from the fixed solid mask side and peeling and removing the solid mask, and then developing and removing the unexposed photosensitive thin film layer on the substrate. A photosensitive pressure-sensitive adhesive resist composition comprising a photopolymerizable composition used in the method for forming a high-definition pattern image, which comprises the fourth step of forming a high-definition pattern image on, wherein the photopolymerizable composition comprises (1 ) Acrylic or methacrylic end group-containing acrylic oligomer having one or more groups selected from the group consisting of amide group, urea group, urethane group and ester group in the molecular chain, (2) carboxyl group or phosphoric acid group containing acrylic There is provided a photosensitive pressure-sensitive adhesive resist composition comprising an oligomer, (3) a photopolymerization initiator and / or a photosensitizer, and (4) an epoxy resin.

By the combination of these components, both the receiving and fixing characteristics of the transfer solid mask in the thin film layer and the film forming property capable of withstanding the transfer pressure, which are required as a printing type resist, are satisfied,
Further, a composition capable of forming a high resolution fine pattern on a substrate is provided by a development treatment after irradiation with actinic rays. Therefore, by using the pattern forming material of the present invention, a large-area resist pattern can be formed quickly with high accuracy without using a stepper.

These components in the present invention are characterized by the following points.

The oligomer of the first component is a polymerizable compound containing an acryl or methacryl end group which can be polymerized by actinic rays, and serves as a surface tackifying component of the photosensitive thin film layer before actinic ray irradiation, and also as an image. It effectively acts as a cross-linking density adjusting component and does not need to be a single oligomer, and two or more kinds of oligomers can be used in combination.

Examples of the acrylic or methacrylic end group-containing acrylic oligomer used in the present invention include (1) ethylene glycol diacrylate, glycerin triacrylate, polyacrylate, ethylene glycol dimethacrylate, 1,3-propanediol dimethacrylate, Polyethylene glycol dimethacrylate, 1,2,4-butanetriol trimethacrylate, trimethylolethane triacrylate, pentaerythritol dimethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, pentaerythritol diacrylate, pentaerythritol triacrylate, pentaerythritol tetramethacrylate. Acrylate, dipentaerythritol polyacrylate, 1,3- B propanediol diacrylate, unsaturated esters of polyols, such as 1,5-pentanediol dimethacrylate.

(2) Epoxy (meth) acrylate obtained by esterifying bisphenol A type epoxy resin with (meth) acrylic acid and optionally long chain fatty acid such as coconut oil fatty acid or its long chain fatty acid modified product, hydroxyl group An epoxy (meth) acrylate having a dibasic acid anhydride,
Epoxy (meth) acrylates such as tetrabasic acid dianhydride and epoxy (meth) acrylate having a carboxyl group obtained by adding trimellitic anhydride, and modified products thereof.

(3) British Patent No. 1,147,732 (JP-A-51-37193 and JP-A-51-1)
No. 38797), a terminal isocyanate compound obtained by previously reacting a diisocyanate compound with a polyol is added to a molecule obtained by further reacting β-hydroxyalkyl acrylate and / or methacrylate. An addition polymerizable compound having two or more acryloyloxy groups and / or methacryloyloxy groups.

(4) Dibasic acid such as phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, tetrachlorophthalic anhydride, or head acid anhydride as described in JP-B-47-3262. A linear polyester compound obtained by ring-opening polymerization of an anhydride and glycidyl acrylate and / or glycidyl methacrylate and having a large number of pendant acrylyloxy groups and / or methacryloyloxy groups.

(5) A polyhydric alcohol having at least three esterifiable hydroxyl groups at adjacent carbon atoms as described in JP-B-47-23661, and acrylic acid and / or methacrylic acid. Polymerizable esters prepared by co-esterification with dicarboxylic acids selected from the group consisting of dicarboxylic acids and their anhydrides.

(6) British Patent No. 628,150,
U.S. Pat. No. 3,020,255 and monthly magazine "Macromolecules", Vol. 4, No. 5, 630-63.
Polyacryl (or polymethacryl) modified triazine resin obtained by reacting melamine or benzoguanamine with formaldehyde, methyl alcohol and β-hydroxyalkyl acrylate (or methacrylate) as described on page 2 (1971).

(7) An unsaturated polyester resin obtained by reacting a glycidyl ether of a polyhydroxy compound as described in US Pat. No. 3,377,406 with acrylic acid or methacrylic acid.

(8) The general formulas described in US Pat. No. 3,455,801 and US Pat. No. 3,455,802.

[0024]

[Chemical 1]

(In the formula, R represents a divalent saturated or unsaturated aliphatic hydrocarbon group having 2 to 10 carbon atoms, and R'is a divalent saturated aliphatic hydrocarbon group having 2 to 10 carbon atoms. R'represents a hydrogen atom or a methyl group, and n is 1 to 1.
Represents an integer of 4. ) A polyester compound having an acryloyloxy group or a methacryloyloxy group at both ends, represented by

(9) The general formula described in US Pat. No. 3,483,104 and US Pat. No. 3,470,079.

[0027]

[Chemical 2]

(In the formula, A represents —O— or —NH—, at least two in one molecule are —NH—, and R is a divalent saturated aliphatic or unsaturated aliphatic hydrocarbon. Group, R'represents a divalent saturated or unsaturated aliphatic or cyclic hydrocarbon, R "represents a hydrogen atom or an alkyl group, and n represents an integer of 1 to 14). Modified (or dimethacryl modified) polyamide compound.

(10) General formula described in Japanese Patent Publication No. 48-37246

[0030]

[Chemical 3]

(Wherein X represents a hydrogen atom or an acyl group, R represents a divalent saturated or unsaturated aliphatic or cyclic hydrocarbon group, and R ¹ represents a divalent aliphatic hydrocarbon group. , R ² represents a hydrogen atom or an alkyl group, and A is —O.
Represents -or -NH-, at least two in one molecule are -NH-, and n represents an integer of 1 to 14. ) A diacryl-modified (or dimethacryl-modified) polyamide compound represented by:

(11) A saturated or unsaturated dibasic acid or an anhydride thereof as described in US Pat. No. 3,485,732, or if necessary, by reacting them with a diol. A diacryl-modified (or dimethacrylate-modified) polyester compound obtained by further reacting the obtained compound having a carboxyl group at both ends with glycidyl acrylate or glycidyl methacrylate.

(12) The general formula in the molecule as described in Japanese Patent Publication No. 48-12075.

[0034]

[Chemical 4]

(In the formula, X represents an acyl group or a urethane group, and R represents a hydrogen atom, a chlorine atom, a methyl group or a cyano group.) The unsaturated acid ester bond is present in the side chain having a repeating unit. Examples thereof include compounds based on (meth) acrylic copolymers having

Among them, as the acrylic oligomer, an acrylic or methacrylic end group-containing acrylic oligomer having at least one group selected from amide, urea, urethane and ester in the molecular chain is preferably used in the present invention. it can. This type of acrylic oligomer has a great effect of forming a photosensitive thin film layer having a large internal cohesive force, and is useful for enhancing the film formation stability characteristic of the photosensitive layer in the mask transfer step. Furthermore, since a tough cured image area is formed by irradiation with actinic rays and the unexposed area can be easily dissolved and removed, a high-definition pattern can be formed.

Examples of the second component carboxyl group- or phosphate group-containing acrylic oligomer include ethylene oxide-modified phthalic acid acrylate (Aronix M-5400 manufactured by Toagosei Co., Ltd.) and ethylene oxide-modified succinic acid acrylate (Toagosei ( Aronix M-550 Co., Ltd.
0), acrylic acid dimer (Aronix M-5600 manufactured by Toagosei Co., Ltd.), 2-methacryloyloxyethyl phosphate (Kayamer PM-1 manufactured by Nippon Kayaku Co., Ltd.), 2
-Hydroxyethyl methacrylate phosphate (Kayamer PM-2 manufactured by Nippon Kayaku Co., Ltd.) and the like can be mentioned.

These components are useful for improving the adhesion of the cured image to the substrate, and can effectively prevent the fine image formed by irradiation with actinic rays from being lost during the developing step.

The amount of the acrylic oligomer containing a carboxyl group or a phosphoric acid group as the second component is preferably in the range of 5 to 50% by weight in the composition, and 10 to 30% by weight.
Is particularly preferred.

The photopolymerization initiator or photosensitizer as the third component is, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one ("Darocur 11 manufactured by Merck").
73 "), 1-hydroxycyclohexyl phenyl ketone (" Irgacure 184 "manufactured by Ciba Geigy), 1
-(4-Isopropylphenyl) -2-hydroxy-2
-Methylpropan-1-one ("Darocur 1116" manufactured by Merck), benzyl dimethyl ketal ("Irgacure 651" manufactured by Ciba-Geigy), 2-methyl-1-
[4- (Methylthio) phenyl] -2-morpholinopropanone-1 (“Irgacure 90 manufactured by Ciba Geigy”)
7 ”), a mixture of 2,4-diethylthioxanthone (“ Kayacure DETX ”manufactured by Nippon Kayaku Co., Ltd.) and ethyl p-dimethylaminobenzoate (“ Kayacure EPA ”manufactured by Nippon Kayaku Co., Ltd.), isopropylthioxanthone (Wordprekin) A mixture of "Cantacure ITX" manufactured by Sotop Co., Ltd.) and ethyl p-dimethylaminobenzoate, acylphosphine oxide ("Lucirin LR8728" manufactured by BASF, 2
-(Parachlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (paramethoxyphenyl) -4,6-bis (trichloromethyl)-
1,3,5-triazine, 2- (4-methoxy-naphth-1-yl) -4,6-bis (trichloromethyl)-
1,3,5-triazine, 2- (paramethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5
-Triazine and the like.

The proportions of the photopolymerization initiator and the photosensitizer used are
The range of 0.5 to 5% by weight in the resist composition is preferable, and the range of 1.0 to 3.0% by weight is particularly preferable.

The fourth component epoxy resin is a resin having one or more epoxy groups, for example, a bisphenol type epoxy resin obtained by reacting a polyhydric phenol such as bisphenol A, bisphenol F and bisphenol S with epichlorohydrin, and a carboxylic acid. , P-tert-
Examples thereof include novolak type epoxy resins obtained by reacting a monohydric phenol novolac resin such as butylphenol with epichlorohydrin. Above all, glycidyl methacrylate having an ethylenically unsaturated group and an epoxy group is preferably used.

The proportion of the epoxy resin used is preferably in the range of 1 to 50% by weight in the resist composition, particularly preferably in the range of 5 to 30% by weight.

If necessary, an organic polymer conjugate may be added to the composition of the present invention. As the organic polymer conjugate, for example, polystyrene, polyvinyl chloride,
Polyvinyl acetate, polyacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, polymethacrylic acid, polymethyl methacrylate, polyvinyl ether, polyvinyl acetal, and their copolymerized adducts, copolymerized nylon, N A polyamide resin such as an alkoxymethylated nylon, a polyester resin by a condensation reaction of a dicarboxylic acid compound and a diol compound, a polyurethane resin by a diisocyanate compound and a diol compound, an aliphatic cyclic hydrocarbon resin, a polyterpene resin,
Examples thereof include polyisoprene rubber, synthetic rubber, chlorinated rubber and the like.

This organic polymer conjugate is effective in improving the mask transfer suitability to the resist film, prevents the resist film from being deformed at the time of transfer, and resist required for fixing and holding the transfer mask. The adhesive strength of the surface can be increased.

Each of the components described above is the main component of the pattern forming material in the present invention. Of course, in addition to the composition of the present invention, an antioxidant, a chain transfer agent, a thermal polymerization inhibitor, a dye,
A coloring agent such as a pigment may be added and used if necessary.

In order to effectively bring out the function of the composition of the present invention, it is preferable to carry out heat treatment after irradiation with actinic rays. The heat treatment increases the crosslink density of the cured image area, and the etching resistance of the resist image can be effectively improved.

The heat treatment suitable for forming a pattern having excellent etching resistance can be performed on the cured image portion formed on the substrate after the development treatment, or on the entire surface of the photosensitive layer before the development treatment. That is also effective. Although the heat treatment of the photosensitive layer before the development treatment promotes crosslinking even in the unexposed portion of the photosensitive layer, in the composition of the present invention, the partially crosslinked unexposed portion of the photosensitive layer can be sufficiently dissolved and removed by development. It is possible to expose a clear substrate surface to be etched.

The temperature of the heat treatment is preferably in the range of 100 to 250 ° C, particularly preferably 120 to 200 ° C. The heat treatment time can be appropriately selected and is usually 5 to 3
0 minutes is preferred.

[0050]

EXAMPLES The present invention will be described more specifically below by showing examples of the present invention. However, the invention is not limited to these examples.

Example 1 A urethane acrylic oligomer (A) containing an acrylic end group was synthesized by adding 3 mol of tolylene diisocyanate to 2 mol of polypropylene glycol having a molecular weight of 3000 and further adding 2 mol of hydroxypropyl acrylate.

Using this, a liquid photopolymerizable composition was prepared with the following composition. Urethane acrylic oligomer (A) 33 g Ethylene oxide modified phthalic acid acrylate 18 g (“Aronix M-5400” manufactured by Toagosei Co., Ltd.) Styrene acrylic acid resin 18 g (“John Krill 68” manufactured by Johnson Polymer Co., Ltd., M _W = 10000) ) Trimethylolpropane acrylic acid benzoate 8g (Kyoeisha Oil & Fat Co., Ltd. "BA-134") Glycidyl methacrylate 20g (Nippon Oil & Fat Co., Ltd. "Blenmer G") 2- (paramethoxyphenyl) -4,6 -Bis (tri 3g chloromethyl) -1,3,5-triazine methyl cellosolve 100g methyl ethyl ketone 150g ────────────────────────────── ─── 350g

The above-mentioned photopolymerizable composition solution was spin-coated (3000 rpm) on a slide glass substrate, and 100
It was dried at 0 ° C. for 10 minutes to form a uniform photosensitive coating having a thickness of 2.5 μm. This photosensitive coating has a sufficiently tacky surface at room temperature, and when the finger is pressed from above, it sticks to the fingertips, and in this state it is tacky enough to be lifted up into the air together with the slide glass substrate. Had power.

The above photopolymerizable composition solution was roll-coated on a glass substrate on which indium oxide was vapor-deposited to a thickness of 400 Å, and dried at 100 ° C. for 5 minutes to obtain a thickness of 3.0.
A micron uniform photosensitive layer coating was formed.

When a metal mask was roller-pressed onto this photosensitive coating, it was sufficiently adhered to the surface of the photosensitive layer and no drop of the metal mask was observed even when the glass substrate was turned upside down. The photosensitive layer to which the metal mask had been fixed was collectively exposed by irradiating it with ultraviolet rays of 150 mJ / cm ² from a metal halide lamp having an output of 80 W / cm.

After removing the metal mask by peeling, the photosensitive layer was heat-treated at 180 ° C. for 10 minutes in a dryer. After allowing to cool to room temperature and developing with a methyl cellosolve solvent for 1 minute and washing with water, the light-shielded portion was dissolved and removed, and only the light-irradiated portion remained as a non-adhesive cured resist image on the substrate. The cured image area resolved a 3 micron wide line and space of the metal mask.

This resist image-forming glass plate was placed at 36 ° C.
The substrate was immersed in an aqueous solution containing ferric chloride and hydrochloric acid kept for 2 minutes and etched for 2 minutes. The ITO layer in the pattern opening without the resist image was completely removed from the glass substrate. At that time, swelling, peeling in the resist image area,
No detachment was observed and it was confirmed that the etching resistance was excellent.

Example 2 A liquid photopolymerizable composition was prepared with the following composition.

Ester-based acrylic oligomer 42 g (“Aronix M-6400” manufactured by Toagosei Co., Ltd.) Urethane acrylic oligomer (A) 10 g Phosphate group-containing acrylic oligomer (“Kayamer PM-1” manufactured by Nippon Kayaku Co., Ltd.) 10 g Carboxylic group-containing acrylic oligomer "Aronix M-5400" 11 g Isocyanuric acid EO-modified triacrylate 9 g (Toagosei Co., Ltd. "Aronix M-315") Epoxy resin 14 g (Shin-Nippon Rika Co., Ltd. "Rikaresin HBE") ) 2- (paramethoxystyryl) -4,6-bis (tri 4 g chloromethyl) -1,3,5-triazine methyl cellosolve 100 g methyl ethyl ketone 150 g ────────────────── ─────────────── 350g

The above-mentioned photopolymerizable composition solution was spin-coated (3000 rpm) on a slide glass substrate to obtain 100
It was dried at 0 ° C. for 10 minutes to form a uniform photosensitive coating having a thickness of 2.5 μm. This photosensitive coating has a sufficiently tacky surface at room temperature, and when the finger is pressed from above, it sticks to the fingertips, and in this state it is tacky enough to be lifted up into the air together with the slide glass substrate. Had power.

The photopolymerizable composition solution was roll-coated on an ITO-treated glass substrate in the same manner as in Example 1 to give a thickness of 3.
A 0 micron uniform photosensitive layer coating was formed.

When a metal mask was roller-pressed onto this photosensitive coating, it was sufficiently adhered to the surface of the photosensitive layer and no drop of the metal mask was observed even when the glass substrate was turned upside down. The photosensitive layer to which the metal mask had been fixed was collectively exposed by irradiating it with ultraviolet rays of 150 mJ / cm ² from a metal halide lamp having an output of 80 W / cm.

Then, after removing the metal mask by peeling, the film was developed with a methyl cellosolve solvent for 1 minute and washed with water.
The part shielded from light by the mask was dissolved and removed, and only the light irradiation part remained as a non-adhesive cured resist image on the substrate.
The cured image area resolved a 3 micron wide line and space of the metal mask.

Then, this resist image was transferred to 1 in a dryer.
It was heat-treated at 50 ° C. for 30 minutes and allowed to cool to room temperature.

The resist image-forming glass plate was placed at 40 ° C.
It was immersed in a 50% strength aqueous solution of hydrochloric acid, and etched for 2 minutes. While the ITO layer in the opening was completely removed, no defects such as swelling, peeling and dropping were observed in the patterned resist image, and it was confirmed that the resist image had excellent etching resistance.

[0066]

EFFECT OF THE INVENTION The photosensitive adhesive resist composition of the present invention and the pattern forming method using the same are a photosensitive material capable of forming a thin film single layer coating and having a function of transferring and fixing a metal mask or the like on the surface thereof. Therefore, it is possible to form a high-resolution pattern image excellent in etching resistance on a substrate by a batch exposure method without using a stepper.

Therefore, if the high-definition pattern forming material of the present invention is used, a large area circuit element substrate can be easily manufactured with high productivity.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI Technical display location G03F 7/029 7/032 501 7/30 7124-2H 7/40 501 7124-2H H01L 21/027 7352-4M H01L 21/30 361 Q

Claims (2)

[Claims] 1. A first step of applying a photopolymerizable composition onto a substrate to form a photosensitive thin film layer having surface adhesiveness, transferring and fixing a light-shielding solid mask on the surface of the photosensitive thin film layer. 2nd step, 3rd step of cross-linking and curing the photosensitive thin film layer in the mask opening by irradiating actinic rays from the fixed solid mask side, and peeling and removing the solid mask, then developing and removing the unexposed photosensitive thin film layer A photosensitive adhesive resist composition comprising a photopolymerizable composition for use in a method for forming a high-definition pattern image, which comprises the fourth step of forming a high-definition pattern image on a substrate. (1) an acrylic or methacrylic end group-containing acrylic oligomer having at least one group selected from the group consisting of an amide group, a urea group, a urethane group, and an ester group in the molecular chain, (2) a carboxyl group, or Re Acid group-containing acrylic oligomer,
A photosensitive pressure-sensitive resist composition comprising (3) a photopolymerization initiator and / or a photosensitizer and (4) an epoxy resin. 2. A first step of applying a photopolymerizable composition onto a substrate to form a photosensitive thin film layer having surface adhesiveness, transferring and fixing a light-shielding solid mask on the surface of the photosensitive thin film layer. 2nd step, 3rd step of cross-linking and curing the photosensitive thin film layer in the mask opening by irradiating actinic rays from the fixed solid mask side, and peeling and removing the solid mask, then developing and removing the unexposed photosensitive thin film layer The method for forming a high-definition pattern image, which comprises the fourth step of forming a high-definition pattern image on a substrate by using the photopolymerizable composition as an additive,
Using the photosensitive pressure sensitive adhesive resist composition as described above, after forming an image by the developing treatment of the fourth step or by the developing treatment, 10
A method for forming a high-definition pattern image, which comprises heat-treating a photosensitive layer at a temperature of 0 to 250 ° C.