JPH06252313A - Semiconductor lead frame plating device - Google Patents

Semiconductor lead frame plating device

Info

Publication number
JPH06252313A
JPH06252313A JP6085693A JP6085693A JPH06252313A JP H06252313 A JPH06252313 A JP H06252313A JP 6085693 A JP6085693 A JP 6085693A JP 6085693 A JP6085693 A JP 6085693A JP H06252313 A JPH06252313 A JP H06252313A
Authority
JP
Japan
Prior art keywords
lead frame
etching
plating
treatment
semiconductor lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6085693A
Other languages
Japanese (ja)
Inventor
Akihisa Hongo
明久 本郷
Satoshi Sendai
敏 千代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP6085693A priority Critical patent/JPH06252313A/en
Publication of JPH06252313A publication Critical patent/JPH06252313A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide the title semiconductor lead frame plating device capable of removing any residual smut on a lead frame surface caused by etching step for obviating defective plating such as defective bonding, etc. CONSTITUTION:Within the title semiconductor lead frame plating device equipped with a degreasing means 1, a washing means 2, an etching means 3, another washing means 4, a pre-dipping means 5, a solder plating means 6, the other washing means 7, an alkali neutralizing means 8, the other washing means-9 and a drying means 10, an ultrasonic cleaning means 11 for ultrasonic cleaning step is provided between the etching means 3 and the solder plating means 6. Next, after finishing the etching step by the etching means 3, the semiconductor lead frames are to be ultrasonic-cleaned by the ultrasonic cleaning means 11 to be solder plated later.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体リードフレームの
外装部分にハンダ鍍金処理を施す半導体リードフレーム
鍍金装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor lead frame plating apparatus for applying a solder plating treatment to an exterior portion of a semiconductor lead frame.

【0002】[0002]

【従来技術】図4は従来のこの種の半導体リードフレー
ム鍍金装置の構成を示す図である。半導体リードフレー
ム鍍金装置は、図示するように、脱脂処理手段1、水洗
処理手段2、エッチング処理手段3、水洗処理手段4、
プレディップ処理手段5、ハンダ鍍金処理手段6、水洗
処理手段7、アルカリ中和処理手段8、水洗処理手段9
及び乾燥処理手段10を具備する。
2. Description of the Related Art FIG. 4 is a diagram showing the structure of a conventional semiconductor lead frame plating apparatus of this type. As shown in the figure, the semiconductor lead frame plating apparatus includes a degreasing treatment means 1, a water washing treatment means 2, an etching treatment means 3, a water washing treatment means 4,
Pre-dip processing means 5, solder plating processing means 6, water washing processing means 7, alkali neutralization processing means 8, water washing processing means 9
And a drying treatment means 10.

【0003】脱脂処理手段1は半導体リードフレームの
機械加工等においてリードフレーム表面に付着した脂を
除去する処理手段で、通常脱脂液を収容する液槽にリー
ドフレームを浸漬して脱脂する。水洗処理手段2は脱脂
処理により付着した脱脂液を除去するための水洗いで、
通常純水を収容した水槽の中に脱脂処理したリードフレ
ームを浸漬して行なう。エッチング処理手段3はエッチ
ング処理を施す手段で、通常硫酸+過酸化水素系のエッ
チング液を収容した液槽に所定時間して浸漬して行な
う。
The degreasing processing means 1 is a processing means for removing the oil adhering to the surface of the lead frame during the machining of the semiconductor lead frame, etc. Usually, the lead frame is immersed in a liquid tank containing a degreasing liquid to degrease it. The water washing treatment means 2 is a water washing for removing the degreasing liquid attached by the degreasing treatment,
Usually, the degreased lead frame is immersed in a water tank containing pure water. The etching treatment means 3 is a means for performing an etching treatment, and is usually immersed in a liquid tank containing an etching solution of sulfuric acid + hydrogen peroxide system for a predetermined time.

【0004】水洗処理手段4はエッチング処理の終了し
たリードフレームを水洗いする処理で通常純水を収容し
た水槽の中にエッチング処理したリードフレームを浸漬
して行なう。プレディップ処理手段5はハンダ鍍金処理
の直前の処理で、通常鍍金液と同じ酸性の液を収容した
液槽に浸漬して行なう。このプレディップ処理は、エッ
チング処理の後、エッチング処理液を除去するため水洗
いを行なうが、この水洗いによってもエッチング処理液
は完全に除去されず極僅かのエッチング液が表面に付着
し、リードフレーム表面に酸化膜を形成するので、この
酸化皮膜の除去と表面に付着するその他の不純物の除
去、更にプレディップ液に鍍金液と同じ液を用い、これ
により鍍金液の濃度を所定の値に維持するために行な
う。ハンダ鍍金処理手段6はリードフレームの外装部分
にハンダ鍍金処理を行なう手段で、鍍金液中でハンダ材
を陽極、リードフレームを陰極として通電することによ
り行なう。水洗処理手段7はハンダ鍍金処理により付着
した鍍金処理液を除去する水洗いで、通常純水を収容し
た水槽の中に鍍金処理の終了したリードフレームを浸漬
して行なう。
The washing process means 4 is a process of washing the lead frame which has been subjected to the etching process by immersing the lead frame which has been subjected to the etching process in a water tank containing pure water. The pre-dip processing means 5 is a process immediately before the solder plating process, and is usually performed by immersing it in a liquid tank containing the same acidic liquid as the plating liquid. In this pre-dip process, the etching treatment is followed by washing with water to remove the etching treatment liquid, but the etching treatment liquid is not completely removed even by this washing, and a very small amount of etching liquid adheres to the surface, leading to the lead frame surface. Since an oxide film is formed on the surface, the oxide film is removed and other impurities adhering to the surface are removed, and the same solution as the plating solution is used as the pre-dip solution, thereby maintaining the concentration of the plating solution at a predetermined value. To do so. The solder plating means 6 is a means for performing a solder plating treatment on the exterior portion of the lead frame, which is performed by energizing the solder material in the plating solution with the solder material as the anode and the lead frame as the cathode. The water washing treatment means 7 is a water washing for removing the plating treatment liquid adhered by the solder plating treatment, which is usually performed by immersing the lead frame after the plating treatment in a water tank containing pure water.

【0005】アルカリ中和処理手段8は残留鍍金液の中
和処理を行なう手段で、通常中和液が収容された液槽に
水洗処理手段7で水洗いの終了したリードフレームを浸
漬して行なう。水洗処理手段9は最後の水洗い手段で通
常純水が収容された水槽に浸漬して行なう。乾燥処理手
段10は水洗後の乾燥を行なうものである。
The alkaline neutralization processing means 8 is a means for neutralizing the residual plating solution. Usually, the lead frame that has been washed by the water washing processing means 7 is immersed in a liquid tank containing the neutralization solution. The water-washing means 9 is the last water-washing means, and is normally immersed in a water tank containing pure water. The drying processing means 10 is for performing drying after washing with water.

【0006】[0006]

【発明が解決しようとする課題】最近半導体素子の微細
化に伴いリードフレームも年々薄くなり、そのピッチも
狭ピッチ化している。そして銅(Cu)系の半導体リー
ドフレームにおいては、このような薄形化及び狭ピッチ
化傾向に対応してニッケル(Ni)やシリコン(Si)
元素を混合させてリードフレーム材の強度を上げる場合
が多くなった。
With the recent miniaturization of semiconductor elements, the lead frame has become thinner year by year, and the pitch thereof has become narrower. In a copper (Cu) -based semiconductor lead frame, nickel (Ni) or silicon (Si) is dealt with in response to such a tendency toward thinning and narrow pitch.
In many cases, the strength of the lead frame material was increased by mixing the elements.

【0007】上記ニッケル(Ni)やシリコン(Si)
元素を混合させた銅(Cu)系の半導体リードフレーム
の外装部分にハンダ鍍金処理を行なう場合、上記のよう
にハンダ鍍金処理手段6でハンダ鍍金処理を行なう前に
エッチング処理手段3でエッチング処理を行なってい
る。このエッチング処理手段3では、硫酸+過酸化水素
系のエッチング液を使用する場合が多いが、リードフレ
ーム材に含まれるNiやSiがこのエッチング処理によ
り溶解した後、リードフレーム表面から離脱することな
く黒い粉末状の所謂スマットとして残留する場合が多
い。リードフレーム表面にこのスマットが残量したまま
ハンダ鍍金処理手段6でハンダ鍍金処理を行なうと密着
不良等の鍍金不良が生じるという問題があった。
The above nickel (Ni) and silicon (Si)
When performing the solder plating treatment on the exterior portion of the copper (Cu) -based semiconductor lead frame mixed with the elements, the etching treatment means 3 performs the etching treatment before performing the solder plating treatment by the solder plating treatment means 6 as described above. I am doing it. In this etching processing means 3, an etching solution of sulfuric acid + hydrogen peroxide system is often used, but after Ni or Si contained in the lead frame material is dissolved by this etching processing, it is not separated from the surface of the lead frame. It often remains as so-called smut in the form of black powder. If the solder plating process is performed by the solder plating process means 6 with the smut remaining on the surface of the lead frame, there is a problem that plating defects such as poor adhesion occur.

【0008】本発明は上述の点に鑑みてなされたもの
で、このスマットをリードフレーム表面から除去し、密
着不良等の鍍金不良が発生することのない半導体リード
フレーム鍍金装置を提供することを目的とする。
The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor lead frame plating apparatus in which this smut is removed from the surface of the lead frame and plating defects such as poor adhesion do not occur. And

【0009】[0009]

【課題を解決するための手段】上記課題を解決するため
本発明は、少なくともエッチング処理を施すエッチング
処理手段と鍍金処理を施すハンダ鍍金処理手段を具備
し、半導体リードフレームの外装部分にエッチング処理
手段でエッチング処理を施した後、ハンダ鍍金処理を施
す半導体リードフレーム鍍金装置において、エッチング
処理手段とハンダ鍍金処理手段との間に超音波洗浄を行
なう超音波洗浄手段を設け、エッチング処理手段でエッ
チング処理を施した後、該洗浄手段で超音波洗浄し、そ
の後ハンダ鍍金処理を施すことを特徴とする。
In order to solve the above problems, the present invention comprises at least an etching treatment means for performing an etching treatment and a solder plating treatment means for subjecting a plating treatment to an etching treatment means on an exterior portion of a semiconductor lead frame. In a semiconductor lead frame plating apparatus that performs a solder plating process after performing an etching process with, an ultrasonic cleaning unit that performs ultrasonic cleaning is provided between the etching process unit and the solder plating process unit, and the etching process is performed by the etching process unit. After performing the above, ultrasonic cleaning is performed by the cleaning means, and then solder plating treatment is performed.

【0010】また、超音波洗浄手段は、超音波振動子を
設置した水洗槽であることを特徴とする。
Further, the ultrasonic cleaning means is a water washing tank in which an ultrasonic vibrator is installed.

【0011】また、エッチング処理手段の次に水洗いを
行なう水洗槽を設置し、その次に超音波振動子を設置し
た水洗槽を設置したことを特徴とする。
Further, the invention is characterized in that a rinsing tank for rinsing with water is installed next to the etching means, and then a rinsing tank with an ultrasonic transducer is installed.

【0012】また、半導体リードフレーム鍍金装置はハ
ンダ鍍金処理手段の前にハンダ鍍金処理直前のプレディ
ップ処理を行なうプレディップ処理槽を具備し、該プレ
ディップ処理槽の中に超音波振動子を設置したことを特
徴とする。
Further, the semiconductor lead frame plating apparatus is provided with a pre-dip processing tank for performing a pre-dip processing just before the solder plating processing before the solder plating processing means, and an ultrasonic transducer is installed in the pre-dip processing tank. It is characterized by having done.

【0013】また、エッチング処理手段の処理槽の中に
超音波振動子を設置したことを特徴とする。
An ultrasonic transducer is installed in the processing tank of the etching processing means.

【0014】[0014]

【作用】エッチング処理手段とハンダ鍍金処理手段との
間に超音波洗浄を行なう超音波洗浄手段を設けたことに
より、エッチング処理で生ずるリードフレーム表面に付
着するスマットは完全に除去され、ハンダ鍍金の不良等
の不具合は発生しなくなる。
By providing the ultrasonic cleaning means for performing ultrasonic cleaning between the etching processing means and the solder plating processing means, the smut adhered to the surface of the lead frame caused by the etching processing is completely removed, and the solder plating Defects such as defects will not occur.

【0015】[0015]

【実施例】以下本発明の一実施例を図面に基づいて説明
する。図1は本発明の半導体リードフレーム鍍金装置の
一構成を示す図である。図1において、図4と同一符号
を付した部分は同一又は相当部分を示す。本半導体リー
ドフレーム鍍金装置は、図1に示すように、脱脂処理手
段1、水洗処理手段2、エッチング処理手段3、水洗処
理手段4、プレディップ処理手段5、ハンダ鍍金処理手
段6、水洗処理手段7、アルカリ中和処理手段8、水洗
処理手段9及び乾燥処理手段10を具備し、エッチング
処理手段3と水洗処理手段4との間に超音波洗浄手段1
1を具備する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a configuration of a semiconductor lead frame plating apparatus of the present invention. In FIG. 1, the same reference numerals as those in FIG. 4 indicate the same or corresponding portions. As shown in FIG. 1, this semiconductor lead frame plating apparatus includes a degreasing treatment means 1, a water washing treatment means 2, an etching treatment means 3, a water washing treatment means 4, a pre-dip treatment means 5, a solder plating treatment means 6, and a water washing treatment means. 7, an alkali neutralization treatment means 8, a water washing treatment means 9 and a drying treatment means 10 are provided, and the ultrasonic washing means 1 is provided between the etching treatment means 3 and the water washing treatment means 4.
1 is provided.

【0016】上記構成の鍍金装置において、超音波洗浄
手段11は水槽の中に超音波振動子を設置した構成であ
る。板金等の機械加工で加工された半導体リードフレー
ムは、脱脂処理手段1及び水洗処理手段2の各処理を経
てエッチング処理手段3でエッチング処理が施される。
この点は従来例と同一である。エッチング処理は硫酸+
過酸化水素系のエッチング液に所定時間して浸漬して行
なうが、上述のように銅(Cu)系の半導体リードフレ
ームにおいては強度を上げるためニッケル(Ni)やシ
リコン(Si)元素を混合させているため、エッチング
処理を行なうとこのNiやSi元素が溶解し、リードフ
レーム表面に黒い粉末状のスマットとして残留する場合
が多い。このスマットが残留するリードフレームを純水
が収容された該超音波洗浄手段11の水槽の中に浸漬し
て、超音波振動子から超音波を発射することにより、リ
ードフレーム表面に残留するこのスマットは完全に除去
される。
In the plating apparatus having the above structure, the ultrasonic cleaning means 11 has an ultrasonic vibrator installed in a water tank. The semiconductor lead frame machined by sheet metal or the like is subjected to etching processing by the etching processing means 3 after each processing of the degreasing processing means 1 and the water washing processing means 2.
This point is the same as the conventional example. Etching process is sulfuric acid +
It is performed by immersing it in a hydrogen peroxide-based etching solution for a predetermined time. As described above, in the copper (Cu) -based semiconductor lead frame, nickel (Ni) and silicon (Si) elements are mixed in order to increase the strength. Therefore, when the etching process is performed, the Ni and Si elements are often dissolved and remain as black powdery smut on the surface of the lead frame. The lead frame on which the smut remains is immersed in the water tank of the ultrasonic cleaning means 11 containing pure water, and ultrasonic waves are emitted from the ultrasonic vibrator, so that the smut remaining on the surface of the lead frame. Are completely removed.

【0017】前記スマットが除去されたリードフレーム
は水洗処理手段4で水洗い、プレディップ処理手段5で
プレディップ処理、ハンダ鍍金処理手段6でハンダ鍍金
される。このハンダ鍍金は上記のように超音波洗浄を行
なうことにより、エッチング処理で生ずる残留スマット
が除去されているから、密着の良好な鍍金となる。ハン
ダ鍍金されたリードフレームは、その後水洗処理手段7
で水洗い、アルカリ中和処理手段8でアルカリ中和処
理、水洗処理手段9で水洗いされ、最後に乾燥処理手段
10で乾燥されて終了する。
The lead frame from which the smut has been removed is washed with water by means of washing treatment means 4, pre-dip treatment by pre-dip treatment means 5, and solder-plated by solder-plating treatment means 6. Since the solder plating is subjected to ultrasonic cleaning as described above, the residual smut generated by the etching process is removed, and therefore plating with good adhesion is obtained. The solder-plated lead frame is then washed with water 7
After that, it is washed with water, washed with alkali neutralization treatment means 8 with alkali neutralization treatment means 8 and washed with water with water treatment treatment means 9, and finally dried with drying treatment means 10 to finish.

【0018】図2は本発明の半導体リードフレーム鍍金
装置の他の構成を示す図である。図示するように、本鍍
金装置では、水洗処理槽4をエッチング処理手段3の直
後に配置し、超音波洗浄手段11を配置している点が異
なるが、その他の点は図1と同じである。このように構
成しても、エッチング処理によりリードフレーム表面に
残留するスマットは超音波洗浄手段11の超音波洗浄に
より完全に除去され、密着の良好なハンダ鍍金がなされ
る。
FIG. 2 is a diagram showing another structure of the semiconductor lead frame plating apparatus of the present invention. As shown in the figure, this plating apparatus is different in that the water washing treatment tank 4 is arranged immediately after the etching treatment means 3 and the ultrasonic washing means 11 is arranged, but the other points are the same as in FIG. . Even with this configuration, the smut remaining on the surface of the lead frame due to the etching process is completely removed by the ultrasonic cleaning of the ultrasonic cleaning means 11, and solder plating with good adhesion is performed.

【0019】図3は本発明の半導体リードフレーム鍍金
装置の他の構成を示す図である。図示するように、本鍍
金装置では、プレディップ処理手段5’の液槽に超音波
振動子12を配置している。プレディップ処理手段5’
の液槽にはハンダ鍍金液と同じ液(酸性液)が収容され
ており、この液槽にエッチング処理手段3でエッチング
し、水洗処理手段4で水洗したリードフレームを浸漬
し、超音波振動子12から超音波を発射することによ
り、本来のプレディップ処理、即ち残留エッチング液に
よるリードフレーム表面に形成される酸化皮膜や表面に
付着する不純物の除去と、エッチング処理による残留ス
マットの除去とが同時に効果的に実施できる。従って、
ハンダ鍍金処理手段6によるハンダ鍍金も密着の良好な
ものとなる。
FIG. 3 is a diagram showing another structure of the semiconductor lead frame plating apparatus of the present invention. As shown in the figure, in this plating apparatus, the ultrasonic transducer 12 is arranged in the liquid tank of the pre-dip processing means 5 '. Predip processing means 5 '
The same liquid as the solder plating liquid (acidic liquid) is stored in the liquid bath of No. 3, and the lead frame which is etched by the etching treatment means 3 and washed by the water washing treatment means 4 is immersed in the liquid bath, and the ultrasonic transducer is applied. By emitting ultrasonic waves from 12, the original pre-dip processing, that is, the removal of the oxide film formed on the surface of the lead frame and the impurities attached to the surface by the residual etching solution and the removal of the residual smut by the etching processing are performed at the same time. It can be implemented effectively. Therefore,
Solder plating by the solder plating processing means 6 also has good adhesion.

【0020】なお、上記実施例ではエッチング処理手段
3の次に超音波洗浄処理手段11を配置し(図1参
照)、又はエッチング処理手段3に続く水洗処理手段4
の次に超音波洗浄処理手段11を配置し(図2参照)、
又はプレディップ処理手段5’に超音波振動子12を設
けた(図3参照)が、本願発明はこれに限定されるもの
ではなく、例えばエッチング処理手段の処理槽中に超音
波振動子を配置し、エッチング処理と同時に超音波洗浄
を行うか、或いはエッチング処理の終了後に該処理槽内
で超音波洗浄するようにしてもよい。
In the above embodiment, the ultrasonic cleaning treatment means 11 is arranged next to the etching treatment means 3 (see FIG. 1), or the washing treatment means 4 following the etching treatment means 3 is used.
Next, ultrasonic cleaning means 11 is arranged (see FIG. 2),
Alternatively, the ultrasonic transducer 12 is provided in the pre-dip processing means 5 '(see FIG. 3), but the present invention is not limited to this, and for example, the ultrasonic transducer is arranged in the processing tank of the etching processing means. However, ultrasonic cleaning may be performed at the same time as the etching process, or ultrasonic cleaning may be performed in the processing tank after the etching process is completed.

【0021】上記のようにエッチング処理と同時に、或
いはエッチング処理の終了後に該処理槽内で超音波洗浄
することにより、リードフレームを構成する合金の種類
によっては、リードフレーム表面に付着するスマット等
を効果的に除去できる場合もある。
As described above, ultrasonic cleaning is performed in the treatment tank at the same time as the etching treatment or after the etching treatment is completed, so that smut or the like adhered to the surface of the lead frame may be removed depending on the type of alloy constituting the lead frame. In some cases, it can be effectively removed.

【0022】[0022]

【発明の効果】以上説明したように本発明によれば、エ
ッチング処理手段とハンダ鍍金処理手段との間に超音波
洗浄を行なう超音波洗浄手段を設け、エッチング処理に
よりリードフレーム表面に付着するスマットを超音波洗
浄により完全に除去した後、ハンダ鍍金を行なうので、
ハンダ鍍金に密着不良等の不具合は発生しないという優
れた効果が得られる。
As described above, according to the present invention, the ultrasonic cleaning means for ultrasonic cleaning is provided between the etching processing means and the solder plating processing means, and the smut adhered to the surface of the lead frame by the etching processing is provided. Is completely removed by ultrasonic cleaning, and then solder plating is performed.
It is possible to obtain an excellent effect that defects such as poor adhesion do not occur in the solder plating.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体リードフレーム鍍金装置の一構
成を示す図である。
FIG. 1 is a diagram showing a configuration of a semiconductor lead frame plating apparatus of the present invention.

【図2】本発明の半導体リードフレーム鍍金装置の他の
構成を示す図である。
FIG. 2 is a diagram showing another configuration of the semiconductor lead frame plating apparatus of the present invention.

【図3】本発明の半導体リードフレーム鍍金装置の他の
構成を示す図である。
FIG. 3 is a diagram showing another configuration of the semiconductor lead frame plating apparatus of the present invention.

【図4】従来の半導体リードフレーム鍍金装置の他の構
成を示す図である。
FIG. 4 is a diagram showing another configuration of a conventional semiconductor lead frame plating apparatus.

【符号の説明】[Explanation of symbols]

1 脱脂処理手段 2 水洗処理手段 3 エッチング処理手段 4 水洗処理手段 5 プレディップ処理手段 5’ プレディップ処理手段 6 ハンダ鍍金処理手段 7 水洗処理手段 8 アルカリ中和処理手段 9 水洗処理手段 10 乾燥処理手段 11 超音波洗浄手段 12 超音波振動子 DESCRIPTION OF SYMBOLS 1 Degreasing treatment means 2 Water washing treatment means 3 Etching treatment means 4 Water washing treatment means 5 Predip treatment means 5'Predip treatment means 6 Solder plating treatment means 7 Water washing treatment means 8 Alkaline neutralization treatment means 9 Water washing treatment means 10 Drying treatment means 11 ultrasonic cleaning means 12 ultrasonic transducer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C23C 2/34 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location C23C 2/34

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 少なくともエッチング処理を施すエッチ
ング処理手段と鍍金処理を施すハンダ鍍金処理手段を具
備し、半導体リードフレームの外装部分に前記エッチン
グ処理手段でエッチング処理を施した後、ハンダ鍍金処
理を施す半導体リードフレーム鍍金装置において、 前記エッチング処理手段とハンダ鍍金処理手段との間に
超音波洗浄を行なう超音波洗浄手段を設け、前記エッチ
ング処理手段でエッチング処理中又はエッチング処理を
施した後、該洗浄手段で超音波洗浄し、その後ハンダ鍍
金処理を施すことを特徴とする半導体リードフレーム鍍
金装置。
1. An etching treatment means for performing at least an etching treatment and a solder plating treatment means for performing a plating treatment are provided, and after an etching treatment is applied to the exterior portion of the semiconductor lead frame by the etching treatment means, a solder plating treatment is applied. In a semiconductor lead frame plating apparatus, ultrasonic cleaning means for performing ultrasonic cleaning is provided between the etching processing means and the solder plating processing means, and the cleaning is performed during or after the etching processing by the etching processing means. A semiconductor lead frame plating apparatus, characterized in that ultrasonic cleaning is performed by means, and then solder plating treatment is performed.
【請求項2】 前記超音波洗浄手段は、超音波振動子を
設置した水洗槽であることを特徴とする請求項1記載の
半導体リードフレーム鍍金装置。
2. The semiconductor lead frame plating apparatus according to claim 1, wherein the ultrasonic cleaning means is a water washing tank in which an ultrasonic vibrator is installed.
【請求項3】 前記エッチング処理手段の次に水洗いを
行なう水洗槽を設置し、その次に前記超音波振動子を設
置した水洗槽を設置したことを特徴とする請求項1又は
2記載の半導体リードフレーム鍍金装置。
3. The semiconductor device according to claim 1, further comprising a washing tank for washing water next to the etching means, and then a washing tank having the ultrasonic transducer. Lead frame plating equipment.
【請求項4】 前記半導体リードフレーム鍍金装置はハ
ンダ鍍金処理手段の前にハンダ鍍金処理直前のプレディ
ップ処理を行なうプレディップ処理槽を具備し、該プレ
ディップ処理槽の中に超音波振動子を設置したことを特
徴とする請求項1記載の半導体リードフレーム鍍金装
置。
4. The semiconductor lead frame plating apparatus comprises a pre-dip processing tank for performing a pre-dip processing immediately before the solder plating processing before the solder plating processing means, and an ultrasonic transducer is provided in the pre-dip processing tank. The semiconductor lead frame plating apparatus according to claim 1, which is installed.
【請求項5】 前記エッチング処理手段の処理槽の中に
超音波振動子を設置したことを特徴とする請求項1記載
の半導体リードフレーム鍍金装置。
5. The semiconductor lead frame plating apparatus according to claim 1, wherein an ultrasonic vibrator is installed in the processing tank of the etching processing means.
JP6085693A 1993-02-25 1993-02-25 Semiconductor lead frame plating device Pending JPH06252313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6085693A JPH06252313A (en) 1993-02-25 1993-02-25 Semiconductor lead frame plating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6085693A JPH06252313A (en) 1993-02-25 1993-02-25 Semiconductor lead frame plating device

Publications (1)

Publication Number Publication Date
JPH06252313A true JPH06252313A (en) 1994-09-09

Family

ID=13154448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6085693A Pending JPH06252313A (en) 1993-02-25 1993-02-25 Semiconductor lead frame plating device

Country Status (1)

Country Link
JP (1) JPH06252313A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000012443A (en) * 1999-12-04 2000-03-06 김무 Method for cleaning lead frame materials of semiconductor package
WO2002085790A3 (en) * 2001-04-19 2003-01-09 Ebara Corp Gas dissolved water producing apparatus and method thereof for use in ultrasonic cleaning equipment
KR100564539B1 (en) * 1999-01-18 2006-03-28 삼성전자주식회사 Apparatus of deflashing package &deflashing method thereby
KR101346584B1 (en) * 2013-05-21 2014-01-03 한수경 Method of removing graphite from the copper surfaces

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100564539B1 (en) * 1999-01-18 2006-03-28 삼성전자주식회사 Apparatus of deflashing package &deflashing method thereby
KR20000012443A (en) * 1999-12-04 2000-03-06 김무 Method for cleaning lead frame materials of semiconductor package
WO2002085790A3 (en) * 2001-04-19 2003-01-09 Ebara Corp Gas dissolved water producing apparatus and method thereof for use in ultrasonic cleaning equipment
US6921063B2 (en) 2001-04-19 2005-07-26 Ebara Corporation Gas dissolved water producing apparatus and method thereof and ultrasonic cleaning equipment and method thereof
KR101346584B1 (en) * 2013-05-21 2014-01-03 한수경 Method of removing graphite from the copper surfaces

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