JPS6034811B2 - Manufacturing method for resin-sealed semiconductor device - Google Patents

Manufacturing method for resin-sealed semiconductor device

Info

Publication number
JPS6034811B2
JPS6034811B2 JP13450677A JP13450677A JPS6034811B2 JP S6034811 B2 JPS6034811 B2 JP S6034811B2 JP 13450677 A JP13450677 A JP 13450677A JP 13450677 A JP13450677 A JP 13450677A JP S6034811 B2 JPS6034811 B2 JP S6034811B2
Authority
JP
Japan
Prior art keywords
resin
manufacturing
semiconductor device
lead frame
sealed semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13450677A
Other languages
Japanese (ja)
Other versions
JPS5467376A (en
Inventor
徳行 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13450677A priority Critical patent/JPS6034811B2/en
Publication of JPS5467376A publication Critical patent/JPS5467376A/en
Publication of JPS6034811B2 publication Critical patent/JPS6034811B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 本発明は樹脂封止型半導体装置の製造方法、特に樹脂封
止時にリードフレーム上に形成された樹脂バリの除去方
法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a resin-sealed semiconductor device, and particularly to a method of removing resin burrs formed on a lead frame during resin-sealing.

従来より樹脂封止型半導体装置は、金属板を蝕刻ないい
まプレスにより切断したりードフレームを形成し、リー
ドフレームの素子搭載部に素子をとりつけ、IJードフ
レームのリード端子と素子電極を金属細線により接続し
た後、成形金型を用いて、樹脂を成形封止し、リードフ
レームの不必要部分を切断する方法により製造されてき
た。
Traditionally, resin-encapsulated semiconductor devices have been produced by cutting a metal plate by etching or pressing to form a lead frame, mounting the element on the element mounting part of the lead frame, and connecting the lead terminals and element electrodes of the IJ board frame with thin metal wires. After connection, the lead frame has been manufactured by molding and sealing the resin using a molding die and cutting off unnecessary portions of the lead frame.

上述の製造方法において半導体素子と半導体素子周辺部
を成形封止する際、金型によりクランプされた外部IJ
ード部に流出した樹脂が、被膜を形成し、いわゆる樹脂
バリとなることが多い。このバリを除去するためサンド
ブラスト等の機械的手段により除去することが行われて
いるが、リードが変形したり、リード表面に傷がつく等
の欠点があった。又、樹脂バリが付着するりード部分に
容易にエッチングできる被膜を予め設け、成形封止後、
被膜をエッチングすることにより、樹脂バリを除去する
方法が行われてきた。
When molding and sealing the semiconductor element and the peripheral part of the semiconductor element in the above manufacturing method, the external IJ clamped by the mold
The resin that has leaked into the board forms a film, often resulting in so-called resin burrs. In order to remove this burr, mechanical means such as sandblasting have been used, but this method has disadvantages such as deformation of the lead and damage to the lead surface. In addition, a film that can be easily etched is provided in advance on the lead portion where resin burrs adhere, and after molding and sealing,
A method has been used to remove resin burrs by etching the coating.

しかしながら上述の方法では、予め被膜を設ける工程を
設けらければならず、製造価格が高くなるという欠点が
あった。本発明の目的は、これらの欠点を除き容易に樹
脂バリを除去する方法を提供することにある。即ち、本
発明は樹脂成形封止を完了したりードフレ−ムを陽極あ
るいは陰極として、電解脱脂浴中で通電し、脱脂剤の作
用と、フレームより発生する酸素ないいま水素ガスの作
用で、樹脂バリをリードフレームより剥離し、除去する
ことを特徴とするものである。以下、本発明の方法を実
施例により説明する。
However, the above-mentioned method has the disadvantage that a step of forming a coating must be provided in advance, which increases the manufacturing cost. An object of the present invention is to provide a method for easily removing resin burrs while eliminating these drawbacks. That is, in the present invention, after completing resin molding and sealing, electricity is applied in an electrolytic degreasing bath with the frame as an anode or a cathode, and the resin is degreased by the action of the degreaser and the action of oxygen or hydrogen gas generated from the frame. This method is characterized by peeling off and removing burrs from the lead frame. The method of the present invention will be explained below using examples.

〔実施例 1〕カセィソーダ75%、界面活性剤1%を
含む電解脱脂剤;浴液濃度100タノク;格温50oo
、電解電圧5V;電流密度(陰極)船/dm2:時間1
び分上記条件にて樹脂成形封止を完了したりードフレー
ムを電解脱脂したところ、大部分の薄い樹脂バリはリー
ドフレームとの接着が破壊されることがわかった。
[Example 1] Electrolytic degreasing agent containing 75% caustic soda and 1% surfactant; Bath solution concentration 100%; temperature 50oo
, electrolysis voltage 5V; current density (cathode) vessel/dm2: time 1
When resin molding and sealing was completed under the above conditions and the lead frame was electrolytically degreased, it was found that most of the thin resin burrs were broken in their adhesion to the lead frame.

〔実施例 2〕 実施例1と同一条件で陰極と陽極を逆転させて電解脱脂
を実施したところ、実施例1より効果が相対的に劣った
[Example 2] When electrolytic degreasing was carried out under the same conditions as in Example 1 with the cathode and anode reversed, the effect was relatively inferior to that in Example 1.

これは陽極で発生する酸素ガスが陰極で発生する水素ガ
スの半分であることによるとの判断から、電流密度(陽
極)6A/dm2としたところ、〔実施例1〕と同様の
効果を得た。〔実施例 3〕次に電解バレルに鋼球をメ
ディアとして、実施例1,2と同一の液組成、格温、同
一の電流密度となる電圧にて電解脱脂を実施したところ
、実施例1,2より更に効果が大きかった。
Judging that this is because the oxygen gas generated at the anode is half the hydrogen gas generated at the cathode, we set the current density (anode) to 6 A/dm2, and obtained the same effect as [Example 1]. . [Example 3] Next, electrolytic degreasing was carried out using a steel ball as a media in an electrolytic barrel at a voltage that gave the same liquid composition, temperature, and current density as in Examples 1 and 2. The effect was even greater than 2.

これは、バレルの渡洋効果が現われたものと考えられる
。又俗濃度、格温、電流密度とバリ取効果の相関につい
て検討したところ、150夕/そ程度にて飽和するとは
言え、格濃度が高い程、格温が高い程、電流密度が高い
程効果が大きかった。又市販のアルカリ性電解脱脂剤3
種類について、電解脱脂によるバリ効果を検討したとこ
ろ、多少の違いはあれ、実施例と同様のバリ取効果を有
することがわかった。
This is thought to be due to the effect of the barrel crossing the ocean. In addition, we investigated the correlation between the deburring effect and the concentration, temperature, and current density, and found that although it saturates at about 150 m/s, the higher the concentration, the higher the temperature, and the higher the current density, the more effective the deburring effect becomes. was big. Also, commercially available alkaline electrolytic degreaser 3
When examining the burr effect due to electrolytic degreasing, it was found that the burr removal effect was similar to that of the example, although there were some differences.

Claims (1)

【特許請求の範囲】 1 樹脂封止を完了したリードフレームを陽極又は陰極
として、アルカリ性電解脱脂浴中で通電し、脱脂剤の作
用と、リードフレームより発生するガスの作用で、リー
ドフレームに形成された樹脂バリを除去することを特徴
とした樹脂封止型半導体装置の製造方法。 2 電解脱脂時に電解用バレルを使用することを特徴と
した特許請求の範囲第1項の樹脂封止型半導体装置の製
造方法。
[Scope of Claims] 1. The resin-sealed lead frame is used as an anode or a cathode, and electricity is applied in an alkaline electrolytic degreasing bath, and the lead frame is formed by the action of the degreaser and the action of the gas generated from the lead frame. A method for manufacturing a resin-sealed semiconductor device, characterized by removing resin burrs. 2. The method for manufacturing a resin-sealed semiconductor device according to claim 1, characterized in that an electrolytic barrel is used during electrolytic degreasing.
JP13450677A 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device Expired JPS6034811B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13450677A JPS6034811B2 (en) 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13450677A JPS6034811B2 (en) 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS5467376A JPS5467376A (en) 1979-05-30
JPS6034811B2 true JPS6034811B2 (en) 1985-08-10

Family

ID=15129905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13450677A Expired JPS6034811B2 (en) 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS6034811B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188830A (en) * 1981-05-16 1982-11-19 Toshiba Corp Removing method for resin burr of semiconductor device
JPS63181337A (en) * 1987-01-22 1988-07-26 Mitsubishi Electric Corp Elimination of resin burr of resin-molded lead frame and its equipment

Also Published As

Publication number Publication date
JPS5467376A (en) 1979-05-30

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