JPH06252186A - Manufacture of resin-encapsulated semiconductor device and jig for it - Google Patents

Manufacture of resin-encapsulated semiconductor device and jig for it

Info

Publication number
JPH06252186A
JPH06252186A JP3871093A JP3871093A JPH06252186A JP H06252186 A JPH06252186 A JP H06252186A JP 3871093 A JP3871093 A JP 3871093A JP 3871093 A JP3871093 A JP 3871093A JP H06252186 A JPH06252186 A JP H06252186A
Authority
JP
Japan
Prior art keywords
resin
pair
semiconductor device
resin layer
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3871093A
Other languages
Japanese (ja)
Inventor
Kazuyuki Sakai
一幸 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP3871093A priority Critical patent/JPH06252186A/en
Publication of JPH06252186A publication Critical patent/JPH06252186A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To correct warping of the mounting face of an insulating type resin- encapsulated semiconductor device without using a die and provide excellent heat dissipating characteristics by joining a pair of resin-encapsulated semiconductor devices back to back, keeping them at a high temperature under the condition that they are pressed and held and completely curing the resin. CONSTITUTION:The whole heat dissipating plate 2 whereupon a semiconductor pellet 3 is fixed is coated thick on the pellet fixing side and thin on the rear side with resin 6. At least a pair of such resin-encapsulated semiconductor devices whose surface of the resin layer 6b on the rear side is warped by uneven resin contraction at a resin curing process are joined back to back. The devices 1 are kept at a high temperature under the condition that they are pressed and held from the front sides and the warping of the rear side resin layer 6b is corrected in curing the resin 6 completely. For example, a pair of semiconductor devices 1 and 1 pressed and held by a pair of clips 13 and 14 are kept in a high temperature furnace at 150 deg.C for an hour and the resin 6 is completely cured.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は樹脂封止形半導体装置
の製造方法および治具に関し、特に半導体ペレットを含
む放熱基板の表裏全面を完全に樹脂封止した樹脂絶縁形
の樹脂封止形半導体装置の製造方法、およびこれに用い
る製造治具に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and a jig for manufacturing a resin-sealed semiconductor device, and more particularly to a resin-insulated resin-sealed semiconductor in which the entire front and back surfaces of a heat dissipation board including semiconductor pellets are completely resin-sealed. The present invention relates to a device manufacturing method and a manufacturing jig used for the method.

【0002】[0002]

【従来の技術】樹脂封止形半導体装置には種々のものが
あり、例えばパワ−トランジスタ等では電子機器内のプ
リント配線基板上に、実装に際して絶縁板等を介在させ
ることなく、該半導体装置をそのままプリント配線基板
上に載置して取付けが出来る樹脂絶縁形のものがある。
2. Description of the Related Art There are various types of resin-encapsulated semiconductor devices. For example, in the case of power transistors and the like, the semiconductor device can be mounted on a printed wiring board in an electronic device without interposing an insulating plate or the like during mounting. There is a resin insulation type that can be mounted on the printed wiring board as it is.

【0003】図4および図5はこの種樹脂絶縁形の樹脂
封止形半導体装置1の構造を示す側断面図と一部破断上
面図であり、金属製の放熱基板2上には半導体ペレット
3が導電性ペ−スト等で固着され、その放熱基板2の基
端部からは、上記半導体ペレット3の裏面電極を導出す
るためのリ−ド4aが延設されている。このリ−ド4a
の両側には、半導体ペレット3の表面電極と金属細線5
で接続されたリ−ド4b,4cが配設されている。そし
て、これらの半導体ペレット3、金属細線5、リ−ド4
b,4cの内端部を含む放熱基板2の表裏全面に、エポ
キシ樹脂などの外装樹脂6が樹脂成形により被覆されて
いる。そして、放熱基板2の先端部には孔7が穿設され
ており、この孔7に対応して外装樹脂6に取付孔8が貫
通して形成されている。
4 and 5 are a side sectional view and a partially cutaway top view showing the structure of a resin-sealed type semiconductor device 1 of this type of resin insulation type. A semiconductor pellet 3 is formed on a metal heat dissipation substrate 2. Is fixed by a conductive paste or the like, and a lead 4a for leading out the back electrode of the semiconductor pellet 3 is extended from the base end portion of the heat dissipation substrate 2. This lead 4a
On both sides of the surface, the surface electrode of the semiconductor pellet 3 and the thin metal wire 5
Leads 4b and 4c connected with each other are provided. Then, these semiconductor pellets 3, metal wires 5, leads 4
The entire front and back surfaces of the heat dissipation board 2 including the inner ends of b and 4c are covered with an exterior resin 6 such as epoxy resin by resin molding. A hole 7 is formed at the tip of the heat dissipation board 2, and a mounting hole 8 is formed so as to penetrate the exterior resin 6 corresponding to the hole 7.

【0004】さらに、上記樹脂封止形半導体装置1の外
装樹脂6は放熱基板2上面の半導体ペレット固着側は厚
い樹脂層6aで形成して半導体ペレット3を保護すると
共に、半導体ペレット非固着の裏面側は可及的に薄い樹
脂層6bで形成して、半導体装置の絶縁性と半導体装置
の放熱性を得るようにしている。また、半導体ペレット
固着側の厚い樹脂層6aは先端の取付孔8側をペレット
固着側より薄く段差形状に形成して、半導体装置の取付
け性を得るようにしている。
Further, the exterior resin 6 of the resin-encapsulated semiconductor device 1 is formed by forming a thick resin layer 6a on the upper surface of the heat dissipation substrate 2 on which the semiconductor pellets are fixed to protect the semiconductor pellets 3 and the back surface on which the semiconductor pellets are not fixed. The side is formed of a resin layer 6b which is as thin as possible so as to obtain the insulation of the semiconductor device and the heat dissipation of the semiconductor device. In addition, the thick resin layer 6a on the semiconductor pellet fixing side has a stepped shape at the tip end thereof which is thinner than the pellet fixing side so that the semiconductor device can be easily attached.

【0005】かかる構造の樹脂封止形半導体装置1は、
図6に示すように、プリント配線基板9の所定位置に、
裏面側の取付け面10を直接的に載置させ、取付ネジ1
1でそのまま締付け固定することにより、絶縁板等を介
在させることなく、配線基板9上に装着できる。この場
合、半導体装置1の取付け面10側の外装樹脂6は可及
的に薄い樹脂層6bで形成されており、半導体ペレット
3からの発熱は、放熱基板2、薄い樹脂層6bを介し
て、プリント配線基板9側に有効に放熱させる構造が採
用されている。
The resin-sealed semiconductor device 1 having such a structure is
As shown in FIG. 6, at a predetermined position of the printed wiring board 9,
The mounting surface 10 on the back side is directly placed, and the mounting screw 1
By fixing it by 1 as it is, it can be mounted on the wiring board 9 without interposing an insulating plate or the like. In this case, the exterior resin 6 on the mounting surface 10 side of the semiconductor device 1 is formed of the resin layer 6b that is as thin as possible, and the heat generated from the semiconductor pellets 3 passes through the heat dissipation substrate 2 and the thin resin layer 6b. A structure for effectively radiating heat to the printed wiring board 9 side is adopted.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、このよ
うにペレット3の固着側を厚く、裏面側で薄く樹脂層を
形成し、半導体装置の取付け面10の絶縁性と放熱性を
図った樹脂絶縁形の樹脂封止形半導体装置1は、外装樹
脂6の金型キャビティ内の樹脂成形の硬化過程で、厚い
樹脂層6a部分の収縮率と薄い樹脂層6b部分の収縮率
が異なり、裏面側の薄い樹脂層6bの表面が中央部で山
形に湾曲した反りが発生し、取付け面10の両端部とプ
リント配線基板9の載置面との間に空隙12を生じて、
樹脂絶縁形の樹脂封止形半導体装置1の放熱特性が大幅
に低下する問題があった。
However, such a resin insulation type in which the fixing side of the pellet 3 is thick and the resin layer is thinly formed on the back side in this way to achieve insulation and heat dissipation of the mounting surface 10 of the semiconductor device. In the resin-encapsulated semiconductor device 1 of 1., the shrinkage rate of the thick resin layer 6a portion and the shrinkage rate of the thin resin layer 6b portion are different in the hardening process of the resin molding in the mold cavity of the exterior resin 6, and the thin resin layer on the back surface side is thin. A warp in which the surface of the resin layer 6b is curved like a mountain at the central portion is generated, and a gap 12 is formed between both end portions of the mounting surface 10 and the mounting surface of the printed wiring board 9,
There is a problem in that the heat dissipation characteristics of the resin-insulated resin-sealed semiconductor device 1 are significantly reduced.

【0007】かかる樹脂絶縁形の樹脂封止半導体装置1
における取付け面10の反りを防止するには、(A)放
熱基板2の裏面側に形成する樹脂層6bの厚みを厚くす
る方法、(B)放熱基板2自体の肉厚を厚くして機械的
強度をもたす方法が考えられるが、前者は樹脂封止半導
体装置1の放熱特性を悪くするものであり、又、後者は
放熱基板材料のリ−ドフレ−ムの材料費が高くなり、製
品コストが高価になるなどの欠点があり、何れも実用的
な解決策とはなり得なかった。
[0007] Such a resin-insulated type resin-sealed semiconductor device 1
In order to prevent the warp of the mounting surface 10 in (1), (A) a method of increasing the thickness of the resin layer 6b formed on the back surface side of the heat dissipation board 2, and (B) increasing the thickness of the heat dissipation board 2 itself to mechanically Although a method of giving strength can be considered, the former deteriorates the heat dissipation characteristics of the resin-sealed semiconductor device 1, and the latter increases the material cost of the lead frame of the heat dissipation substrate material, There were drawbacks such as high cost, and neither could be a practical solution.

【0008】このため、(C)半導体ペレッ3が固着さ
れる放熱基板2の裏面側の樹脂層6bを、中央部が薄
く、周辺部で厚くなるように外装樹脂6を樹脂成形し、
樹脂の硬化後平坦になるようにするものも提案されてい
る(特公平3−73141参照)。しかしながら、この
ように樹脂成形後に基板裏面側が平坦になるように外装
樹脂6を樹脂成形するためには、樹脂成形機の成形用金
型面に、放熱基板の裏面側樹脂層の中央部で肉薄く、周
辺部で肉厚くなるように、湾曲状ないし山形状の勾配を
設けて微細加工を施す必要があり、金型製作費が極めて
高価になる。また、金型も樹脂成形作業中、充填樹脂の
フィラ−材で、特に金型キャビテイ内の湾曲部が磨耗し
易く、金型の保守管理や作業管理が煩雑になり、必ずし
も優れた解決策ではなかった。
Therefore, (C) the resin layer 6b on the back surface side of the heat dissipation substrate 2 to which the semiconductor pellet 3 is fixed is resin-molded with the exterior resin 6 such that the central portion is thin and the peripheral portion is thick.
It has also been proposed to make the resin flat after curing (see Japanese Patent Publication No. 3-73141). However, in order to resin-mold the exterior resin 6 so that the back surface of the substrate becomes flat after the resin molding in this manner, the surface of the molding die of the resin molding machine is formed at the central portion of the resin layer on the back surface of the heat dissipation substrate. It is necessary to provide a curved or mountain-shaped gradient to perform fine processing so as to be thin and thick in the peripheral portion, and the die manufacturing cost becomes extremely expensive. In addition, the mold is also a filler resin filler material during resin molding work, especially the curved part inside the mold cavity is easily worn, and maintenance and work management of the mold become complicated, so it is not always an excellent solution. There wasn't.

【0009】従って、本発明は上記に鑑みなされたもの
であり、高価で、保守管理の煩雑な金型などを用いるこ
となく、絶縁形の樹脂封止形半導体装置の取付け面に生
じる反りに適確に対処して、樹脂封止形半導体装置をプ
リント配線基板に密着させて、良好な放熱特性を得よう
とするものである。
Therefore, the present invention has been made in view of the above, and is suitable for a warp that occurs on the mounting surface of an insulating resin-sealed semiconductor device without using an expensive mold that requires complicated maintenance. It is an attempt to obtain a good heat dissipation characteristic by making sure measures to bring the resin-sealed semiconductor device into close contact with the printed wiring board.

【0010】[0010]

【課題を解決するための手段】本発明は、樹脂封止形半
導体装置は一般に金型内で樹脂成形するとき、溶融され
たモ−ルド樹脂がキャビティ内を通過中に樹脂硬化し、
所定形状に成形されるが、これは樹脂が完全に硬化した
ものではなく、いわば半硬化の段階であり、しかも、上
記樹脂封止形半導体装置の裏面の反りは僅かなものであ
り、これを高温保管など熱による樹脂の完全硬化する前
に、機械的押圧により反りを矯正しながら高温保管し、
樹脂を完全硬化するよう構成したものである。そのた
め、本発明は半導体ペレットを固着した放熱基板全面
を、ペレット固着側を厚く、裏面側で薄く樹脂層を成形
してなり、成形後の硬化過程の収縮で、前記裏面側の樹
脂層表面が樹脂の厚み差により湾曲して形成された一対
の樹脂封止形半導体装置を、それぞれ裏面同士を背中合
わせにして突き合わせ、かつ各表面から押圧挟持し、そ
の状態で高温保管して、樹脂を完全硬化させ、上記裏面
側樹脂層の反りを矯正するものである。また、本発明は
裏面同士を背中合わせにして突き合わせた一対の樹脂封
止形半導体装置の各表面の両端部を一対のクリップで押
圧挟持して、高温保管し、裏面側樹脂層の反りを矯正す
るものである。さらに、本発明は基台ベ−ス上に固定さ
れ、側面に、前記ペレット固着側樹脂層表面のペレット
側および取付け孔側の両端部とがそれぞれ当接される第
1および第2の当接面が形成された段差状壁面を有した
固定支持体と、前記固定支持体の側面側に配設され、前
記第1および第2の当接面に対向した位置に、前記ペレ
ット固着側樹脂層表面のペレット側および取付け孔側の
両端部とがそれぞれ当接される第3および第4の当接面
が形成された段差状壁面を有した可動支持体と、この可
動支持体に取付けられ、可動支持体を前記固定支持体側
に移動する駆動体とから構成し、前記第1および第2の
当接面と前記第3および第4の当接面との間に、裏面側
同士を背中合わせにして突き合わせた一対の樹脂封止形
半導体装置を装着して、その表面側を押圧挟持させ、前
記裏面側樹脂層の反りを矯正するものである。
SUMMARY OF THE INVENTION According to the present invention, when a resin-sealed semiconductor device is generally resin-molded in a mold, the molten mold resin is cured while passing through the cavity,
Although it is molded into a predetermined shape, this is not a completely cured resin but a so-called semi-cured stage, and the back surface of the resin-encapsulated semiconductor device is slightly warped. Before the resin is completely cured by heat such as high temperature storage, it is stored at high temperature while correcting warpage by mechanical pressing,
It is configured to completely cure the resin. Therefore, according to the present invention, the entire surface of the heat dissipation substrate to which the semiconductor pellets are fixed is formed by molding the resin layer thick on the pellet fixing side and thin on the back surface side, and the resin layer surface on the back surface side is contracted during the curing process after molding. A pair of resin-encapsulated semiconductor devices that are curved due to the difference in resin thickness are butt-butted with their backsides facing each other, and pressed and clamped from each surface, and then stored at high temperature to completely cure the resin. Thus, the warp of the back surface side resin layer is corrected. Further, according to the present invention, both ends of each front surface of a pair of resin-encapsulated semiconductor devices, which are back to back butted against each other, are pressed and sandwiched by a pair of clips, stored at high temperature, and the warp of the back surface side resin layer is corrected. It is a thing. Further, according to the present invention, the first and second abutments are fixed on a base base, and the side faces are brought into contact with both ends of the pellet fixing side resin layer surface on the pellet side and the mounting hole side, respectively. A fixed support body having a stepped wall surface formed with a surface, and the pellet fixing side resin layer disposed on the side surface side of the fixed support body and facing the first and second contact surfaces. A movable support body having stepped wall surfaces on which third and fourth contact surfaces are formed, which are in contact with the pellet-side surface and the mounting hole-side end portions, respectively, and the movable support body is attached to the movable support body, The movable support is composed of a drive body that moves to the fixed support side, and the back sides are back to back between the first and second contact surfaces and the third and fourth contact surfaces. Surface of a pair of resin-sealed semiconductor devices Was pressed sandwich is for correcting the warpage of the rear surface side resin layer.

【0011】[0011]

【作用】金型キャビテティ内の樹脂成形後の硬化過程で
裏面側樹脂層の湾曲した樹脂封止形半導体装置の反り
は、反り部の裏面同士が背中合わせにして突合わせられ
ており、これが各表面からクリップや押圧手段で押圧さ
れ、裏面の背中合わせに配置された反り部空隙が押圧さ
れ、平坦に矯正される。同時に、この治具による矯正
時、外装樹脂は高温炉の高温雰囲気で完全に硬化され、
取付け面が平坦に矯正された状態で硬化する。
The warpage of the resin-sealed semiconductor device in which the backside resin layer is curved in the curing process after the resin is molded in the mold cavity is such that the backsides of the warped parts are butted against each other, and these are the front and back surfaces. Then, it is pressed by a clip or a pressing means, and the warp voids arranged back to back on the back surface are pressed to be flattened. At the same time, when straightening with this jig, the exterior resin is completely cured in the high temperature atmosphere of the high temperature furnace,
Hardens with the mounting surface flattened.

【0012】[0012]

【実施例】以下、本発明の実施例を図面を参照しつつ詳
述する。図1は本発明の一実施例であり、樹脂絶縁形の
樹脂封止形半導体装置1の裏面側の反りを矯正する矯正
過程の側面図であり、一対の樹脂封止形半導体装置1、
1が、それぞれ裏面同士を背中合わせにして突き合わさ
れ、両端の表面側より一対のクリップ13、14で挟持
状に押圧支持された構造のものが示されている。
Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is an embodiment of the present invention and is a side view of a straightening process for straightening a warp on the back surface side of a resin-insulated semiconductor device 1 having a pair of resin-sealed semiconductor devices 1.
1 has a structure in which the back surfaces are abutted against each other, and is pressed and supported by a pair of clips 13 and 14 in a sandwiching manner from the front surface sides of both ends.

【0013】これらの一対の樹脂封止形半導体装置1、
1は、それぞれ高温保管で完全硬化されていない段階の
樹脂成形後のもので、その外形構造は前記図4、図5で
詳述した樹脂封止形半導体装置1と同構造のものであ
る。すなわち、この樹脂封止形半導体装置1も、半導体
ペレット3を固着した放熱基板2の全面を、ペレット固
着面側を厚く、裏面側で薄く装樹層6a,6bを成形し
たものであり、成形の硬化過程での収縮で、樹脂層の厚
み差により裏面側の薄い樹脂層6b表面に中央部が山形
に湾曲した反りが生じているものである。このため、突
き合わされた両取付け面10、10間には、端部に向か
って拡開する空隙15、16が形成されている。
These pair of resin-encapsulated semiconductor devices 1,
Reference numeral 1 denotes a resin-molded semiconductor device 1 which has not been completely cured by being stored at a high temperature, and has the same external structure as the resin-sealed semiconductor device 1 described in detail with reference to FIGS. That is, this resin-encapsulated semiconductor device 1 is also one in which the entire surface of the heat dissipation substrate 2 to which the semiconductor pellets 3 are fixed has the pellet fixing surface side thick and the back surface side thin, and the molding layers 6a and 6b are molded. Due to the shrinkage during the curing process, the warp with the central portion curved in a mountain shape is generated on the surface of the thin resin layer 6b on the back surface side due to the difference in the thickness of the resin layers. For this reason, gaps 15 and 16 that widen toward the ends are formed between the two abutting mounting surfaces 10 and 10.

【0014】そして、このように空隙15、16が形成
された両端部は、図示するように、半導体装置1、1の
両表面から一対のクリップ13、14で挟んで挟持され
ており、それぞれ空隙15、16が押圧されている。そ
して、この一対のクリップ13、14で押圧挟持された
一対の樹脂封止半導体装置1、1は、この挟持状態のま
ま、例えば150℃の高温度に設定された高温保管炉中
に1H保持され、外装樹脂6が熱硬化され、完全に樹脂
硬化される。
As shown in the drawing, the both ends where the voids 15 and 16 are formed are sandwiched by a pair of clips 13 and 14 from both surfaces of the semiconductor device 1 and 1, and the voids are respectively placed. 15, 16 are pressed. The pair of resin-encapsulated semiconductor devices 1 and 1 pressed and sandwiched by the pair of clips 13 and 14 are held in this sandwiched state for 1H in a high-temperature storage furnace set at a high temperature of 150 ° C., for example. The exterior resin 6 is cured by heat and completely cured.

【0015】このように処理される一対の樹脂封止半導
体装置1、1は樹脂成形の硬化過程で、完全に熱硬化し
ていない、いわば半硬化の過程にあり、したがって、裏
面側の空隙15、16部が、それぞれ両端表面側のクリ
ップ13、14で押圧され、中央部の山形に湾曲した反
りが矯正され、平坦になる。同時に、高温保管により、
外装樹脂が完全に熱硬化され、一対の樹脂封止半導体装
置1、1の裏面側取付け面の反りが矯正される。
The pair of resin-encapsulated semiconductor devices 1 and 1 thus treated are in the process of curing the resin molding, which is in the process of not being completely cured by heat, that is, in the process of so-called semi-curing. , 16 parts are respectively pressed by the clips 13 and 14 on both end surface sides, the warp curved in the central part in a mountain shape is corrected, and it becomes flat. At the same time, by high temperature storage,
The exterior resin is completely thermoset, and the warp of the back side mounting surface of the pair of resin-sealed semiconductor devices 1 and 1 is corrected.

【0016】図2および図3は本発明の樹脂封止形半導
体装置の製造に使用する取付け面の反り矯正治具17の
一例で、樹脂封止形半導体装置1の反り矯正を、多数個
同時処理するものである。この反り矯正装置17はそれ
ぞれ裏面同士を背中合わせにして突き合わせた一対の樹
脂封止半導体装置1、1複数対を、列状に矯正治具内に
装着し、それぞれ両表面側より押圧挟持した構造のもの
である。
2 and 3 show an example of a warp correcting jig 17 for a mounting surface used for manufacturing the resin-sealed type semiconductor device of the present invention. It is something to process. This warp straightening device 17 has a structure in which a pair of resin-sealed semiconductor devices 1, one pair of which are back-to-back butted against each other, are mounted in a straightening jig in a row, and pressed from both front surface sides. It is a thing.

【0017】即ち、この反り矯正治具17は基台ベ−ス
18上に、長尺の固定支持体19と、この固定支持体1
9の側面側に、長尺の可動支持体20とを対向させ、並
列状に配設さしている。固定支持体19は、両側面に、
樹脂封止半導体装置1の表面両端の取付け孔側表面およ
びペレット部側表面とがそれぞれ当接する第1および第
2の当接面21、22が形成され、樹脂封止半導体装置
1が垂直に装着支持されるように、段差状壁面に形成さ
れている。
That is, the warp correction jig 17 is provided with a long fixed support 19 and a fixed support 1 on a base base 18.
A long movable support 20 is opposed to the side surface of 9 and arranged in parallel. The fixed support 19 is provided on both sides with
First and second contact surfaces 21 and 22 are formed which contact the mounting hole side surface and the pellet portion side surface at both ends of the resin-encapsulated semiconductor device 1, respectively, and the resin-encapsulated semiconductor device 1 is mounted vertically. It is formed on the stepped wall surface so as to be supported.

【0018】また、可動支持体20は、側面の前記固定
支持体19の第1および第2の当接面21、22と対向
した位置に、同様に、樹脂封止半導体装置1の表面両端
の取付け孔側表面およびペレット部側表面とそれぞれ当
接する第3および第4の当接面23、24が形成され、
樹脂封止半導体装置1を垂直に装着支持する、段差状壁
面に形成されている。
Further, the movable support 20 is provided on the side surface at a position facing the first and second contact surfaces 21 and 22 of the fixed support 19, and similarly on both sides of the surface of the resin-sealed semiconductor device 1. Third and fourth abutting surfaces 23, 24 that come into contact with the mounting hole side surface and the pellet portion side surface, respectively, are formed,
It is formed on a stepped wall surface for vertically mounting and supporting the resin-sealed semiconductor device 1.

【0019】この可動支持体20は、図示しないが、ス
ライド機構等により、基台ベ−ス18上を固定支持体1
9側に前進動、あるいは後退動可能に配設されると共
に、その背面に、可動支持体20を可動する駆動体25
が配設されている。尚、この駆動体25は、バネ圧、エ
ア−圧、油圧等の駆動手段が適宜採用される。また、可
動支持体20は第3および第4の当接面23、24部を
上下分割構造に形成して、樹脂封止半導体装置1の表面
両端部をバランス良く押圧するよう構成されている。
Although not shown, the movable support 20 is fixed on the base base 18 by a slide mechanism or the like.
The drive member 25 is arranged on the 9 side so as to be able to move forward or backward and has a movable support member 20 on the back surface thereof for moving the movable support member 20.
Is provided. Incidentally, as the driving body 25, a driving means such as spring pressure, air pressure, hydraulic pressure or the like is appropriately adopted. Further, the movable supporting member 20 is configured such that the third and fourth abutting surfaces 23 and 24 are formed in a vertically divided structure so as to press both ends of the surface of the resin-sealed semiconductor device 1 in a well-balanced manner.

【0020】かかる反り矯正治具17を用いると、一度
に多数個の樹脂封止形半導体装置の反りを矯正すること
ができ、量産性に好適する。
By using the warp correction jig 17, it is possible to correct the warp of a large number of resin-sealed semiconductor devices at one time, which is suitable for mass production.

【0021】[0021]

【発明の効果】以上のように、本発明は金型内の樹脂硬
化過程で、裏面側取付け面に反りが生じた樹脂絶縁形の
樹脂封止形半導体装置を、それぞれ裏面同士を背中合わ
せに突き合わせ、各表面から押圧挟持しながら、高温保
管するようにしたから、微細加工を要し、かつ保守管理
の煩雑な高価な金型などを用いることなく、裏面側取付
け面の反りが矯正でき、放熱特性の良好な樹脂封止半導
体装置が容易に得られる。
As described above, according to the present invention, the resin-insulated resin-sealed semiconductor device of the resin insulation type in which the back side mounting surface is warped during the resin curing process in the mold is abutted back to back. Since it is stored at high temperature while being pressed and clamped from each surface, it is possible to correct the warp of the back side mounting surface without using an expensive mold that requires fine processing and complicated maintenance, and heat dissipation is possible. A resin-sealed semiconductor device having excellent characteristics can be easily obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の樹脂封止形半導体装置の取付け面の反
り矯正過程の側面図である。
FIG. 1 is a side view of a warp correction process of a mounting surface of a resin-sealed semiconductor device of the present invention.

【図2】本発明の樹脂封止形半導体装置の反り矯正に用
いる治具の側断面図である。
FIG. 2 is a side sectional view of a jig used for warping correction of the resin-sealed semiconductor device of the present invention.

【図3】図2の斜視図である。FIG. 3 is a perspective view of FIG. 2.

【図4】樹脂絶縁形樹脂封止形半導体装置の構造を示す
側断面図である。
FIG. 4 is a side sectional view showing a structure of a resin insulation type resin-sealed semiconductor device.

【図5】図4の一部破断上面図である。5 is a partially cutaway top view of FIG. 4. FIG.

【図6】図4のプリント配線基板への取付け構造の側面
図である。
FIG. 6 is a side view of the mounting structure on the printed wiring board in FIG.

【符号の説明】[Explanation of symbols]

1 樹脂封止半導体装置 2 放熱基板 3 半導体ペレット 6a 厚い樹脂層 6b 薄い樹脂層 10 取付け面 12、15、16 空隙 13、14 クリップ 17 反り矯正治具 18 基台ベ−ス 19 固定支持体 20 可動支持体 21 第1の当接面 22 第2の当接面 23 第3の当接面 24 第4の当接面 25 駆動体 DESCRIPTION OF SYMBOLS 1 Resin-sealed semiconductor device 2 Heat dissipation board 3 Semiconductor pellet 6a Thick resin layer 6b Thin resin layer 10 Mounting surface 12, 15, 16 Gap 13, 14 Clip 17 Warp correction jig 18 Base base 19 Fixed support 20 Movable Support 21 First contact surface 22 Second contact surface 23 Third contact surface 24 Fourth contact surface 25 Driver

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体ペレットを固着した放熱基板全面
を、樹脂にて、ペレット固着側を厚く、裏面側で薄く被
覆した半導体装置であって、樹脂硬化過程での不均一な
樹脂収縮で、前記裏面側の樹脂層表面が湾曲して形成さ
れた少なくとも一対の樹脂封止形半導体装置を、それぞ
れ裏面同士を背中合わせにして突き合わせ、かつ各表面
側から押圧挟持した状態で高温保管し、樹脂を完全硬化
させる過程で、上記裏面側樹脂層の反りを矯正すること
を特徴とする樹脂封止形半導体装置の製造方法。
1. A semiconductor device in which the entire surface of a heat dissipation substrate to which semiconductor pellets are fixed is coated with resin to have a thick pellet fixing side and a thin back surface. At least a pair of resin-encapsulated semiconductor devices whose backside resin layer surface is curved are butt-butted with their backsides back to back, and stored at high temperature in a state of being pressed and clamped from each surface side, and the resin is completely removed. A method of manufacturing a resin-encapsulated semiconductor device, which comprises correcting the warp of the back surface side resin layer in the process of curing.
【請求項2】 裏面同士を背中合わせにして突き合わせ
た一対の樹脂封止形半導体装置の各表面の両端部を一対
のクリップで押圧挟持して、高温保管し、裏面側樹脂層
の反りを矯正することを特徴とする請求項1記載の樹脂
封止形半導体装置の製造方法。
2. A pair of clips are pressed and sandwiched by a pair of clips so that both ends of each surface of a pair of resin-encapsulated semiconductor devices whose backs are back to back are butted against each other and stored at high temperature to correct warpage of the backside resin layer. The method for manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein.
【請求項3】 基台ベ−ス上に固定され、側面に、前記
ペレット固着側樹脂層表面のペレット側および取付け孔
側とがそれぞれ当接される第1および第2の当接面が形
成された段差状壁面を有した固定支持体と、前記固定支
持体の側面側に配設され、前記第1および第2の当接面
に対向した位置に、前記ペレット固着側樹脂層表面のペ
レット側と取付け孔側とがそれぞれ当接される第3およ
び第4の当接面が形成された段差状壁面を有した可動支
持体と、この可動支持体に取付けられ、可動支持体を前
記固定支持体側に移動する駆動体とから構成し、前記第
1および第2の当接面と前記第3および第4の当接面と
の間に装着された一対の樹脂封止半導体装置の表面側を
押圧挟持させ、前記裏面側樹脂層の反りを矯正すること
を特徴とする樹脂封止形半導体装置の反り矯正治具。
3. A first and second contact surface fixed to a base base and having side surfaces contacting the pellet fixing side and the mounting hole side of the pellet fixing side resin layer, respectively. And a fixed support having a stepped wall surface, and a pellet on the surface of the pellet-fixing-side resin layer, which is disposed on a side surface side of the fixed support and faces the first and second contact surfaces. Side and the mounting hole side are respectively brought into contact with each other, and a movable support body having a stepped wall surface on which third and fourth contact surfaces are formed, and the movable support body mounted on the movable support body, and the movable support body is fixed as described above. A front surface side of a pair of resin-encapsulated semiconductor devices, which is composed of a driving body that moves to a support body side and is mounted between the first and second contact surfaces and the third and fourth contact surfaces. The resin seal is characterized in that the warp of the back side resin layer is corrected by pressing Warpage correction jig for static semiconductor devices.
JP3871093A 1993-02-26 1993-02-26 Manufacture of resin-encapsulated semiconductor device and jig for it Withdrawn JPH06252186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3871093A JPH06252186A (en) 1993-02-26 1993-02-26 Manufacture of resin-encapsulated semiconductor device and jig for it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3871093A JPH06252186A (en) 1993-02-26 1993-02-26 Manufacture of resin-encapsulated semiconductor device and jig for it

Publications (1)

Publication Number Publication Date
JPH06252186A true JPH06252186A (en) 1994-09-09

Family

ID=12532880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3871093A Withdrawn JPH06252186A (en) 1993-02-26 1993-02-26 Manufacture of resin-encapsulated semiconductor device and jig for it

Country Status (1)

Country Link
JP (1) JPH06252186A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014154806A (en) * 2013-02-13 2014-08-25 Fuji Electric Co Ltd Semiconductor device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014154806A (en) * 2013-02-13 2014-08-25 Fuji Electric Co Ltd Semiconductor device manufacturing method

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