JPH06215975A - Manufacture of ferroelectric thin film and ferroelectric thin film element having same - Google Patents

Abstract

PURPOSE:To maximize the variation in the spontaneous polarization of the ferroelectric material for higher outputs by defining the ferroelectric thin film in a block which constitutes the minimum unit required for operating a ferroelectric thin film element. CONSTITUTION:A tantalum film 2 and platinum film 3 are formed as a lower electrode on a silicon substrate 1. A lead titanate-zirconate thin film 4 is formed thereon as a ferroelectric thin film. A bias voltage is applied to the silicon substrate 1 while the lead titanate-zirconate thin film 4 is being formed on the lower electrode. After the formation of the lead titanate-zirconate thin film 4, the tantalum 2, platinum 3 and lead titanate-zirconate 4 films are subjected to RIE(Reactive Ion Etching) to form a large number of square patterns, 200mum or below in width and 200mum or below in length. Subsequently, heat treatment is performed to turn the lead titanate-zirconate thin film 4 into a single crystal.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a ferroelectric thin film and a ferroelectric thin film element having the same, and more specifically, one independent section of the ferroelectric thin film has a width of 200 μm or less and a length of 200 μm. The present invention relates to a method of manufacturing a ferroelectric thin film having a size within the range and a single crystal state, and a ferroelectric thin film element having the same.

[0002]

2. Description of the Related Art Due to recent advances in semiconductor technology, various electronic components have been greatly miniaturized and integrated. Along with this, non-volatile memory elements, capacitors, light modulation elements,
Ferroelectric elements applied to piezoelectric elements, pyroelectric infrared sensors, etc. are also expected to be miniaturized and integrated.

Ferroelectric elements such as the nonvolatile memory element, the piezoelectric element, and the pyroelectric infrared sensor are spontaneous polarization P of the ferroelectric substance.
Since the change in s is used as an output, the spontaneous polarization Ps
The larger the change of, the larger the output can be obtained. That is, when the spontaneous polarization Ps of the ferroelectric substance is aligned in one direction, the change of the spontaneous polarization Ps becomes the maximum, and at this time, the ferroelectric element can obtain the largest output. Therefore, various methods for forming a ferroelectric thin film in which the spontaneous polarization Ps of the ferroelectric substance is aligned in one direction are being studied.

For example, the most practically used lead zirconate titanate (PZT), lead titanate (PbTiO ₃ ),
Oxide ferroelectrics such as barium titanate (BaTiO ₃ ) have a tetragonal perovskite structure at room temperature, and their spontaneous polarization Ps is in the (001) direction. A film forming method for orienting a (001) orientation of a dielectric on a substrate such as a semiconductor has been studied. In particular, lead zirconate titanate has a high dielectric constant, is stable, and has a large remanent polarization. Therefore, it has been vigorously studied as a material for a nonvolatile memory element.

As a method of forming these ferroelectric thin films, there are a sputtering method, a sol-gel method, a vapor deposition method and the like.
A sputtering method is generally used, and a reactive high frequency sputtering method is particularly used. Reactive high-frequency sputtering method, oxygen, gas such as argon is introduced into the sputtering chamber to generate glow discharge, and ferroelectrics such as lead zirconate titanate sputtered from the target by ions such as argon, This is a method of forming an oxide ferroelectric thin film by reacting with oxygen or the like on a substrate kept at a high temperature. However, it is not possible to obtain a ferroelectric thin film sufficiently oriented perpendicular to the substrate by using any of the above film forming methods.

Therefore, in order to crystallize or recrystallize the ferroelectric substance to exhibit good ferroelectricity, there has been attempted a method of performing a heat treatment in an oxygen atmosphere after forming a ferroelectric thin film. There is. As a result, the ferroelectric thin film changes from an amorphous or low-oriented polycrystalline state to a highly oriented polycrystalline state, and the proportion of the (001) oriented single crystal increases, and the ferroelectric layer has a large spontaneous polarization Ps. With the body thin film formed, it is possible to obtain a ferroelectric thin film element having a large output. However, even when this method is used, the ferroelectric thin film does not become a single crystal state but remains in a polycrystalline state.

[0007]

When the ferroelectric thin film is in a polycrystalline state, the ferroelectric thin film is formed as a dense aggregate of single crystals and contains innumerable grain boundaries. This causes the size of the spontaneous polarization Ps of the ferroelectric to be significantly smaller than that in the case where the ferroelectric thin film is in a single crystal state. Further, such a grain boundary is also a major cause of a leak current in, for example, a nonvolatile memory element, a piezoelectric element, a pyroelectric infrared sensor, or the like. Further, since such a grain boundary deteriorates the translucency and electro-optical characteristics of the ferroelectric substance, it is difficult to develop an optical element such as an optical modulator or an optical switch.

The present invention has been made in view of the above problems, and an object thereof is to provide a method of manufacturing a ferroelectric thin film in a single crystal state and a ferroelectric thin film element having the method.

[0009]

According to the present invention, there is provided a ferroelectric thin film element having a ferroelectric thin film, which constitutes a minimum unit necessary for operating the ferroelectric thin film element. There is provided a ferroelectric thin film element characterized in that the ferroelectric thin film in one independent section has a width of 200 μm or less and a length of 200 μm or less and is in a single crystal state.

Further, according to the present invention, a ferroelectric thin film is formed on a substrate or an electrode formed on the substrate or in the substrate, and then the ferroelectric thin film is divided into one or a large number of isolated pieces. Processed to make the size of one independent section 20 width
A method for producing a ferroelectric thin film, characterized in that the ferroelectric thin film is made into a single crystal state by heat treatment within 0 μm and a length of 200 μm, and in advance, on a substrate or on a substrate or in a substrate. Ferroelectric thin film is formed on the electrode formed in step 1 by separating it into one or many pieces with the size of one independent section within 200 μm in width and 200 μm in length, and then performing a heat treatment. There is provided a method for manufacturing a ferroelectric thin film, which is characterized in that the body thin film is in a single crystal state.

The substrate used in the present invention is not particularly limited as long as it is a substrate generally used for a non-volatile memory element, a capacitor, a light modulation element, a piezoelectric element, a pyroelectric infrared sensor, and the like. Board, S
An rTiO ₃ substrate, a MgO substrate, a sapphire substrate, a compound semiconductor or the like can be used. As the compound semiconductor substrate, for example, GaAs, GaP, AlGaAs, InA
1As or InP can be used.

The ferroelectric thin film of the present invention may be directly formed on the substrate, but may be formed on the substrate by forming an electrode on or in the substrate. In addition, a desired element is formed on the substrate, such as a non-volatile memory element, a capacitor, a light modulation element, a piezoelectric element, a pyroelectric infrared sensor, etc., and an interlayer insulating film and / or an electrode or the like is formed thereon. The ferroelectric thin film may be formed on the above.

The ferroelectric thin film of the present invention has various functions such as a piezoelectric film, a pyroelectric film, and an electro-optic film. The ferroelectric thin film device of the present invention is a nonvolatile memory device, A capacitor, a light modulation element, a piezoelectric element, a pyroelectric infrared sensor, or the like can have various structures depending on its application. For example, as a structure of the ferroelectric thin film element of the present invention, an electrode (lower electrode) is formed on a substrate, a ferroelectric thin film is formed on the lower electrode, and an electrode (lower electrode) is formed on the ferroelectric thin film. Upper electrode) is formed, ions are implanted into a silicon substrate to form an electrode (lower electrode), a ferroelectric thin film is formed on the silicon substrate, and an electrode (upper electrode) is formed on the ferroelectric thin film. , A structure in which a ferroelectric thin film is formed on a substrate, and electrodes are formed so as to sandwich the ferroelectric thin film on the side surface of the ferroelectric thin film, a ferroelectric thin film is formed on the MgO substrate. , A structure in which a part of the MgO substrate on the back surface of the ferroelectric thin film is removed and electrodes are formed on the exposed back surface of the ferroelectric thin film and the surface of the ferroelectric thin film, and the ferroelectric thin film is formed on the sapphire substrate. Ridge type by forming and processing the ferroelectric thin film Forming a granulation of the waveguide, the upper electrode is formed a structure such as to be provided a buffer layer of a ferroelectric on the intersection of the waveguides.

Materials used for the ferroelectric thin film of the present invention
For example, lead zirconate titanate (PZT), chi
Lead titanate (PbTiO₃), Barium titanate (BaT
iO ₃), PLZT and other oxide ferroelectrics.
The electrode used in the present invention acts as an electrode.
Any material may be used. For example, on a silicon substrate
Ordinary electrode materials may be used by implanting ions etc.
May be used. As a material used for electrodes,
Any metal can be used as the electrode, for example,
Tantalum (Ta), platinum (Pt), aluminum (A
l), chromium (Cr), titanium nitride (TiN), etc.
To be

The ferroelectric thin film element of the present invention is driven by applying a driving voltage pulse to the electrodes by providing a means for applying a driving voltage to each of the electrodes formed so as to sandwich the ferroelectric thin film. . The ferroelectric thin film element of the present invention, for example, a structure in which a lower electrode is formed on a substrate, a ferroelectric thin film is formed on the lower electrode, and an upper electrode is formed on the ferroelectric thin film, It will be described with reference to FIG.

In FIG. 1, 1 is a substrate, 2 and 3 are lower electrodes, 4 is a ferroelectric thin film, and 5 is an upper electrode. In this structure, the ferroelectric thin film element is provided with means for applying a driving voltage to each of the upper electrode and the lower electrode,
It is driven by applying a drive voltage pulse to the upper electrode and the lower electrode. The lower electrodes 2 and 3, the ferroelectric thin film 4 and the upper electrode 5 are each formed in large numbers within a width of 200 μm and a length of 200 μm on the substrate 1 and are isolated from each other. Is in a single crystal state.

Next, a method of manufacturing a ferroelectric thin film of the present invention will be described with reference to FIGS. 2, 3 and 4 by taking a method of forming a ferroelectric thin film on an electrode formed on a substrate as an example. To do. In FIG. 2, lower electrodes 2 and 3 are formed on a substrate 1, a ferroelectric thin film 4 is formed thereon, and then the ferroelectric thin film 4 is divided into a large number of isolated pieces to form one thin film. The size of the independent compartment is within 200 μm in width and 200 μm in length
It is the figure which showed the manufacturing method of the ferroelectric thin film 4 characterized by making the ferroelectric thin film 4 into a single crystal state by heat-treating within the following.

3 and 4, the lower electrodes 7 and 8 and the ferroelectric thin film 9 are preliminarily isolated on the substrate 1 into a large number with the size of one independent section within 200 μm in width and 200 μm in length. FIG. 6 is a diagram showing a method of manufacturing the ferroelectric thin film 9, which is characterized in that the ferroelectric thin film 9 is brought into a single crystal state by heat treatment after being formed. First, a description will be given with reference to FIG.

First, the lower electrodes 2 and 3 are formed on the substrate 1. The lower electrodes 2 and 3 can be formed by a known method, for example, a sputtering method using a metal target, a CVD method, a vapor deposition method, or the like, and the lower electrode 2 or 3 has a layer thickness of 30.
~ 300 nm is suitable. After forming the lower electrodes 2 and 3, the ferroelectric thin film 4 is formed. This ferroelectric thin film 4
Is a known method, for example, a radio frequency (RF) sputtering method, a magnetron sputtering method, an ion beam sputtering method, a direct current sputtering method, a sputtering method such as a reactive sputtering method, a sol-gel method, a CVD method.
The film thickness of the ferroelectric thin film 4 is preferably 100 to 1500 nm. At this stage, the structure shown in FIG. 2A is obtained. When forming a film by a radio frequency (RF) sputtering method, a CVD method, an evaporation method, or the like, a bias voltage is applied to the substrate 1 while the ferroelectric thin film 4 is formed on the lower electrode. The bias voltage is preferably -25 to -120V, preferably -40 to -90V. Also,
The substrate temperature during film formation is appropriately selected at 300 ° C. or lower.

After forming the ferroelectric thin film 4, the ferroelectric thin film 4 and the lower electrodes 2 and 3 are individually divided into a plurality of pieces each having a width of 200 μm or less and a length of 200 μm or less. The size of one independent section is within 200 μm width,
The length should be within 200 μm. A known method (microfabrication), for example, RIE, for dividing the ferroelectric thin film 4 and the lower electrodes 2 and 3 into a large number of independent divisions each having a size of 200 μm or less in width and 200 μm or less in length.
(Reactive ion etching) method, ion milling method or the like can be used. At this stage, the structure shown in FIG. 2B is obtained (in the figure, the length direction is perpendicular to the paper surface).

Next, the ferroelectric thin film 4 is brought into a single crystal state by heat treatment. Any heat treatment method may be used as long as it can heat the ferroelectric thin film 4 to a temperature at which it can be brought into a single crystal state. For example, as a heating method, an infrared lamp, a resistance heater, a laser, or the like can be given. The optimum heating temperature is appropriately selected within the range of 500 to 800 ° C. depending on the magnitude of the bias voltage of the substrate 1 when forming the ferroelectric thin film 4. For example, in the case of forming a film by a radio frequency (RF) sputtering method using lead zirconate titanate (PZT) as the ferroelectric thin film 4, when the bias voltage is −50 V, the heating temperature is about 650 ° C.
When the bias voltage is -80V, the heating temperature is about 550 ° C. A heating time of 10 seconds to 50 minutes is suitable. Thus, the ferroelectric thin film 4 of the present invention is obtained.

FIG. 5 shows an example of the heat treatment apparatus of the present invention. In FIG. 5, 10 is a chamber for carrying out heat treatment while keeping an oxygen atmosphere, 11 is an infrared introducing quartz window for introducing infrared rays into the chamber, 12 is an infrared lamp for heating, and 13 is an efficient infrared ray condensing unit. Condensing infrared mirror for, 14 is the size of one independent section 200μ width
One or a large number of ferroelectric thin film samples independently formed within m and 200 μm in length, and 15 is a quartz substrate holder for holding the ferroelectric thin film sample 14 at the infrared focusing position. Reference numeral 16 denotes an exhaust port for evacuating the inside of the chamber 10, and 17 denotes a gas inlet for introducing oxygen gas into the chamber 10.

For example, when heat treatment is performed using this apparatus, the inside of the chamber 10 is previously set to 10 ⁻⁴ Ton by the exhaust port 16.
Oxygen gas is introduced from the gas introduction port 17 in a reduced pressure state of rr to maintain the inside of the chamber 10 at atmospheric pressure. Heat treatment is performed in this oxygen atmosphere, and the ferroelectric thin film sample 14 is heated on the quartz substrate holder 15 by the heating infrared lamp 12 to be in a single crystal state.

Further, by forming the upper electrode 5 on the ferroelectric thin film 4, the ferroelectric thin film element shown in FIG. 1 can be obtained. The upper electrode 5 can be formed by a known method, for example, a sputtering method using a metal target, a CVD method, an evaporation method, or the like, and the layer thickness of the upper electrode 5 is 60 to 60.
600 nm is suitable. Next, a description will be given with reference to FIGS.

In this method of manufacturing a ferroelectric thin film, the lower electrodes 7 and 8 and the ferroelectric thin film 9 are isolated in advance into a large number by setting the size of one independent section within a width of 200 μm and a length of 200 μm. As a method for forming the film, a known method such as a lift-off method or an electrophoretic electrodeposition method can be used. Here, the lift-off method will be described as an example.

First, the lower electrodes 7 and 8 and the ferroelectric thin film 9 are separately formed on the surface of the substrate 1 in advance by using a spinner so that one independent section has a width of 200 μm or less and a length of 200 μm or less. A resist is applied as described above, the resist layer is baked using a wafer stepper, and a development process is performed to form a resist pattern 6. Thus
Substrate 1 with only a large number of regions in which one independent partition is formed within a width of 200 μm and a length of 200 μm
Expose the surface. At this stage, the structure shown in FIG. 3A is obtained. The thickness of the resist layer is preferably thicker than the sum of the thickness of the lower electrode to be formed and the thickness of the ferroelectric thin film.

Then, the lower electrodes 7 and 8 are formed on the substrate 1 provided with the resist pattern 6, and the ferroelectric thin film 9 is formed on the lower electrodes. The formation method and layer thickness of the lower electrodes 7 and 8 and the film formation method and layer thickness of the ferroelectric thin film 9 are the same as those described in FIG. At this stage, the structure shown in FIG. 3B is obtained. Then, the resist pattern 6 on the substrate 1 is removed to obtain the structure of FIG. This structure has the same shape as the structure of FIG.

Next, the ferroelectric thin film 9 is brought into a single crystal state by heat treatment. The heat treatment method is the same as the method described in FIG. Thus, the ferroelectric thin film 9 of the present invention is obtained. Further, by forming the upper electrode 5 on the ferroelectric thin film 9, the ferroelectric thin film element shown in FIG. 4D can be obtained. The forming method and the layer thickness of the upper electrode 5 are the same as those described in FIG.

In the method of manufacturing a ferroelectric thin film of the present invention, it is essential that one independent section of the ferroelectric thin film has a width of 200 μm or less and a length of 200 μm or less before heat treatment. One independent section of the ferroelectric thin film has a width of 2
A shape larger than 00 μm and / or larger than 200 μm in length is not preferable because the ferroelectric thin film does not become a single crystal state after heat treatment and grain boundaries are seen. In addition, one independent section of the ferroelectric thin film has a width of 200 μm or less and a length of 2
There is no problem even if the shape is within 00 μm, no matter how small it is. After the heat treatment, the entire independent section of the ferroelectric thin film becomes a single crystal state having no grain boundary.

The ferroelectric thin film element of the present invention may be made into an element by subjecting the ferroelectric thin film to a single crystal state by heat treatment and then further subjecting it to fine processing if necessary.

[0031]

According to the method of manufacturing a ferroelectric thin film of the present invention,
The size of one independent section of the ferroelectric thin film is 200 μm wide
By subjecting the film to a length of 200 μm or less and then performing a heat treatment, the entire independent section of the ferroelectric thin film is oriented such that the spontaneous polarization Ps of the ferroelectric is aligned in one direction perpendicular to the substrate. It becomes a single crystal state without grain boundaries.

Therefore, in the ferroelectric thin film element having the ferroelectric thin film obtained by the present invention, the change of the spontaneous polarization Ps of the ferroelectric becomes maximum and a large output can be obtained. In addition, the entire ferroelectric thin film is in a single crystal state, and since there are no grain boundaries in the ferroelectric thin film, leakage current in, for example, nonvolatile memory elements, piezoelectric elements, pyroelectric infrared sensors, etc. is reduced. Thus, the repetitive repetitive fatigue of the spontaneous polarization Ps is improved. Furthermore, since the translucency and electro-optical characteristics of the ferroelectric substance are improved, it becomes possible to develop optical elements such as an optical modulator and an optical switch.

[0033]

EXAMPLE A ferroelectric thin film of the present invention was manufactured as follows. In the following examples, the ferroelectric thin film is sandwiched between the lower electrode and the upper electrode so that a voltage can be applied in order to exert the polarization effect of the ferroelectric thin film.

Example 1 First, a tantalum film 2 is formed as a lower electrode on a silicon substrate 1.
The platinum film 3 and the platinum film 3 were each formed to have a thickness of 50 nm by a sputtering method at room temperature. Then, a lead zirconate titanate thin film 4 was formed as a ferroelectric thin film with a film thickness of 300 nm by a radio frequency (RF) sputtering method. A bias voltage of -50 V was applied to the silicon substrate 1 while the lead zirconate titanate thin film 4 was formed on the lower electrode. The substrate temperature was 250 ° C. After forming the lead zirconate titanate thin film 4, the tantalum film 2, the platinum film 3, and the lead zirconate titanate thin film 4 are formed into a square pattern having a width of 200 μm and a length of 200 μm by RIE (reactive ion etching). It processed so that many pieces might be formed.

Then, the ferroelectric thin film of the present invention was manufactured by performing heat treatment using the heat treatment apparatus shown in FIG.
An infrared lamp was used as a heating method, and heating was performed at 650 ° C. for 20 minutes. After heat treatment, lead zirconate titanate thin film 4
Was in a single crystal state in which it was aligned in one direction perpendicular to the substrate. This was confirmed by X-ray diffraction method and electron beam diffraction method.

Finally, the titanium nitride film 5 is used as the upper electrode.
Was formed on the lead zirconate titanate thin film 4 to have a film thickness of 100 nm to manufacture a ferroelectric thin film element having the ferroelectric thin film of the present invention.

Example 2 A lead zirconate titanate thin film 9 was formed by a lift-off method.
The size of one independent compartment is 200 μm in width and 20 in length.
A large number of 0 μm were formed separately.

First, a thin film of lead zirconate titanate 9 is formed on the surface of the silicon substrate 1 by using a spinner so that a large number of individual independent sections each having a width of 200 μm and a length of 200 μm are isolated. Is coated with a resist having a thickness of about 1 μm, and the resist layer is baked using a wafer stepper and developed to form a resist pattern 6, and a large number of 200 μm wide and 200 μm long are formed separately. The surface of the silicon substrate 1 was exposed only in the exposed regions. Next, a tantalum film 7 having a film thickness of 50 nm and a platinum film 8 having a film thickness of 50 nm are formed as a lower electrode from the vertical direction on the silicon substrate 1 provided with the resist pattern 6 by an electron beam evaporation method, and the platinum film 8 is formed. A lead zirconate titanate thin film 9 having a film thickness of 300 nm was formed thereon by a reactive vapor deposition method. Then, the resist pattern 6 on the silicon substrate 1 was removed.

After that, the ferroelectric thin film of the present invention was manufactured by performing a heat treatment using the heat treatment apparatus shown in FIG. Infrared lamp is used as the heating method, and 700 ° C for 3
Heat for 0 minutes. After the heat treatment, the lead zirconate titanate thin film 9 was in a single crystal state in which it was aligned in one direction perpendicular to the substrate. This was confirmed by X-ray diffraction method and electron beam diffraction method.

Finally, the titanium nitride film 5 is used as the upper electrode.
Was formed on the lead zirconate titanate thin film 9 with a film thickness of 100 nm to manufacture a ferroelectric thin film element having the ferroelectric thin film of the present invention.

[0041]

According to the present invention, a ferroelectric thin film in a single crystal state and a ferroelectric thin film element having the same can be obtained. That is, according to the method of manufacturing a ferroelectric thin film of the present invention, the size of one independent section of the ferroelectric thin film is set within a width of 200 μm and a length of 200 μm, and then heat treatment is performed to obtain a ferroelectric substance. The thin film can be brought into a single crystal state in which the spontaneous polarization Ps of the ferroelectric substance is aligned in one direction perpendicular to the substrate.

Therefore, in the ferroelectric thin film element having the ferroelectric thin film obtained by the manufacturing method of the present invention, the change of the spontaneous polarization Ps of the ferroelectric can be maximized and a large output can be obtained. . In addition, since the ferroelectric thin film is in a single crystal state and grain boundaries do not exist in the ferroelectric thin film, it is possible to reduce a leak current in, for example, a nonvolatile memory element, a piezoelectric element, a pyroelectric infrared sensor, or the like. Therefore, the repetitive inversion fatigue of the spontaneous polarization Ps can be improved. Furthermore, since it is possible to improve the translucency and electro-optical characteristics of the ferroelectric substance, it is possible to develop optical devices such as an optical modulator and an optical switch.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing the structure of a ferroelectric thin film element according to the present invention.

FIG. 2 is a cross-sectional view for explaining a method of manufacturing a ferroelectric thin film according to the present invention.

FIG. 3 is a cross-sectional view for explaining a method of manufacturing a ferroelectric thin film according to the present invention.

FIG. 4 is a cross-sectional view for explaining a method of manufacturing a ferroelectric thin film according to the present invention.

FIG. 5 is a schematic view showing an example of a heat treatment apparatus used for manufacturing a ferroelectric thin film of the present invention.

[Explanation of symbols]

 1 Substrate (silicon substrate) 2 Lower electrode (tantalum film) 3 Lower electrode (platinum film) 4 Ferroelectric thin film (lead zirconate titanate thin film) 5 Upper electrode (titanium nitride film) 6 Resist pattern 7 Lower electrode (tantalum film) ) 8 Lower electrode (platinum film) 9 Ferroelectric thin film (lead zirconate titanate thin film) 10 Chamber 11 Infrared introducing quartz window 12 Heating infrared lamp 13 Condensing infrared mirror 14 Ferroelectric thin film sample 15 Quartz substrate holder 16 Exhaust port 17 Gas inlet port

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Claims (3)

[Claims] 1. A ferroelectric thin film element having a ferroelectric thin film, wherein the ferroelectric thin film in one independent section, which constitutes a minimum unit required for operating the ferroelectric thin film element, Within a width of 200 μm and a length of 200 μm,
A ferroelectric thin film element characterized by being in a single crystal state. 2. A ferroelectric thin film is formed on a substrate or on an electrode formed on a substrate or in a substrate, and then processed by subjecting the ferroelectric thin film to one or a plurality of isolated divisions. The size of each independent compartment is within 200 μm in width and 20 in length
A method of manufacturing a ferroelectric thin film, characterized in that the ferroelectric thin film is made into a single crystal state by setting the thickness to 0 μm or less and then performing heat treatment. 3. A ferroelectric thin film formed on a substrate or on an electrode formed on or in a substrate in advance, wherein one or a plurality of ferroelectric thin films each have a size of 200 μm or less in width and 200 μm or less in length. A method of manufacturing a ferroelectric thin film, which comprises forming the ferroelectric thin film in a single crystal state by performing heat treatment after forming the ferroelectric thin film in an isolated state.