JPH06215321A - Dual magnetic head - Google Patents
Dual magnetic headInfo
- Publication number
- JPH06215321A JPH06215321A JP751693A JP751693A JPH06215321A JP H06215321 A JPH06215321 A JP H06215321A JP 751693 A JP751693 A JP 751693A JP 751693 A JP751693 A JP 751693A JP H06215321 A JPH06215321 A JP H06215321A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- magnetic head
- magnetoresistive effect
- dual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
Landscapes
- Magnetic Heads (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は磁気記録装置に用いられ
るデュアル磁気ヘッドにかかり、さらに詳しくは再生部
に磁気抵抗効果素子(以下、MR素子と称する)を用い
たデュアル磁気ヘッドに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dual magnetic head used in a magnetic recording device, and more particularly to a dual magnetic head using a magnetoresistive effect element (hereinafter referred to as MR element) in a reproducing section.
【0002】[0002]
【従来の技術】MR素子を再生部に用いたデュアル磁気
ヘッドは、MR素子の抵抗値が磁界の強さに依存して変
化する特性を利用して、磁気ディスク等の磁気記録媒体
から再生出力を得るものである。MR素子を用いた再生
は、再生出力が磁気記録媒体走行速度に依存せず、磁気
信号の波長のみによって決まるため、低速でも充分な再
生出力が得られ、磁気記録装置の高密度化、小型化に対
して有利である。2. Description of the Related Art A dual magnetic head using an MR element as a reproducing portion utilizes a characteristic that the resistance value of the MR element changes depending on the strength of a magnetic field, and reproduces and outputs from a magnetic recording medium such as a magnetic disk. Is what you get. In the reproduction using the MR element, the reproduction output does not depend on the magnetic recording medium running speed and is determined only by the wavelength of the magnetic signal, so that a sufficient reproduction output can be obtained even at a low speed, and the magnetic recording apparatus can have a high density and a small size. Is advantageous to.
【0003】ここで、MR素子の再生効率に大きな影響
を与えるパラメ−タの一つとしてMR素子の幅(ストラ
イプ幅)がある。ストライプ幅を決める方法は、たとえ
ば特開平3−238614号公報に開示されているよう
に、MR素子を目的のストライプ幅よりも一旦広く形成
した後、機械加工により浮上面ラップ(磁気記録媒体対
向面のラップ)を行い、MR素子を含めて削り、所定の
ストライプ幅にする方法が知られている。The width of the MR element (stripe width) is one of the parameters that greatly affects the reproduction efficiency of the MR element. As a method of determining the stripe width, for example, as disclosed in Japanese Patent Laid-Open No. 3-238614, the MR element is once formed to have a width larger than the intended stripe width, and then the air bearing surface wrap (the surface facing the magnetic recording medium) is machined. Of the MR element and shaving the MR element to obtain a predetermined stripe width.
【0004】[0004]
【発明が解決しようとする課題】上記した従来技術で
は、MR素子のストライプ幅が機械加工の精度範囲内で
バラツキを生ずることになり、再生効率低下の原因にな
る。また、MR素子が磁気記録媒体対向面に露出してい
るため腐食しやすい構造になっている。In the above-mentioned conventional technique, the stripe width of the MR element varies within the accuracy range of machining, which causes a reduction in reproduction efficiency. Further, since the MR element is exposed on the surface facing the magnetic recording medium, the structure is easily corroded.
【0005】本発明は、上記した従来技術の問題点に鑑
み成されたもので、MR素子が腐食しにくく、かつスト
ライプ幅を高精度に形成することが可能なデュアル磁気
ヘッドを提供することにある。The present invention has been made in view of the above-mentioned problems of the prior art, and an object thereof is to provide a dual magnetic head in which an MR element is unlikely to corrode and a stripe width can be formed with high accuracy. is there.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するた
め、本発明のデュアル磁気ヘッドは、基板上に薄膜積層
法によりMR素子とライト素子を形成したデュアル磁気
ヘッドにおいて、上記MR素子がデュアル磁気ヘッドの
磁気記録媒体対向面に露出していないことを特徴として
いる。In order to achieve the above object, a dual magnetic head of the present invention is a dual magnetic head in which an MR element and a write element are formed on a substrate by a thin film laminating method. It is characterized in that it is not exposed on the surface of the head facing the magnetic recording medium.
【0007】このようなデュアル磁気ヘッドは、MR素
子を磁気記録媒体対向面から離してホトリソ技術で作成
し、その後MR素子を削らないように、磁気記録媒体対
向面を機械加工することにより製造される。Such a dual magnetic head is manufactured by separating the MR element from the magnetic recording medium facing surface by a photolithography technique, and then machining the magnetic recording medium facing surface so as not to scrape the MR element. It
【0008】[0008]
【作用】本発明のデュアル磁気ヘッドは、MR素子が磁
気ディスク対向面に露出していないため、MR素子の腐
食が生じにくくなる。また、MR素子のストライプ幅は
機械加工によらず、薄膜技術だけで定まるため、従来技
術に比べて格段に高精度になる。従って、安定した再生
特性が得られる。In the dual magnetic head of the present invention, since the MR element is not exposed on the surface facing the magnetic disk, corrosion of the MR element is less likely to occur. Further, since the stripe width of the MR element is determined only by the thin film technology without using mechanical processing, the MR element has a much higher precision than the conventional technology. Therefore, stable reproduction characteristics can be obtained.
【0009】[0009]
【実施例】以下、添付の図面に示す実施例により、さら
に詳細に本発明について説明する。図1は、本実施例の
のデュアル磁気ヘッド素子の要部を示す説明図である。
図1において、1はセラミック基板、2は下地絶縁膜、
3は下地シールド膜、4は下地ギャップ膜、6は磁気抵
抗効果膜、7は電極導体層、Fは磁気ディスク(図示せ
ず)に対する浮上面(磁気記録媒体対向面)を示してい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in more detail with reference to the embodiments shown in the accompanying drawings. FIG. 1 is an explanatory diagram showing a main part of the dual magnetic head element of the present embodiment.
In FIG. 1, 1 is a ceramic substrate, 2 is a base insulating film,
Reference numeral 3 is a base shield film, 4 is a base gap film, 6 is a magnetoresistive film, 7 is an electrode conductor layer, and F is an air bearing surface (a magnetic recording medium facing surface) for a magnetic disk (not shown).
【0010】図1に示すように、本実施例では、ストラ
イプ幅Wの磁気抵抗効果膜6が、浮上面Fから距離Lだ
け後退して形成されている。なお、図1には示していな
いが、電極導体層7上や下地ギャップ膜4上や磁気抵抗
効果膜6上には、さらに多くの薄膜が積層されている。
また、図1においては、下部シールド膜3及び下部ギャ
ップ膜4が磁気抵抗効果膜3及び電極導体層7の端面に
合わせた断面で示されているが、下部シールド膜3と下
部ギャップ膜4はセラミック基板1と同じ広がりを持つ
ものである。As shown in FIG. 1, in this embodiment, the magnetoresistive film 6 having a stripe width W is formed so as to recede from the air bearing surface F by a distance L. Although not shown in FIG. 1, more thin films are laminated on the electrode conductor layer 7, the underlying gap film 4, and the magnetoresistive effect film 6.
Further, in FIG. 1, the lower shield film 3 and the lower gap film 4 are shown in a cross section which is aligned with the end faces of the magnetoresistive effect film 3 and the electrode conductor layer 7, but the lower shield film 3 and the lower gap film 4 are It has the same width as the ceramic substrate 1.
【0011】図2は、図1に示すデュアル磁気ヘッド素
子を電極導体層7を含む平面S1で切断したときの断面
図である。図2に示す断面図においては、図1で省略さ
れていた多くの薄膜が示されている。FIG. 2 is a sectional view of the dual magnetic head element shown in FIG. 1 taken along a plane S1 including the electrode conductor layer 7. In the cross-sectional view shown in FIG. 2, many thin films omitted in FIG. 1 are shown.
【0012】図3は、図1に示すデュアル磁気ヘッド素
子を電極導体層7を含んでいない平面S2で切断したと
きの断面図である。図3に示す断面図においては、図2
と同様に、図1で省略されていた多くの薄膜が示されて
いる。FIG. 3 is a sectional view of the dual magnetic head element shown in FIG. 1 taken along a plane S2 not including the electrode conductor layer 7. In the sectional view shown in FIG.
Similarly, many thin films that have been omitted in FIG. 1 are shown.
【0013】図2と図3が相違している点は、図1の平
面S1,S2から明らかなように、主に電極導体層7の
有無及び電極16の有無に起因するものであり、その他
の部分はほぼ同一である。The difference between FIG. 2 and FIG. 3 is mainly due to the presence or absence of the electrode conductor layer 7 and the presence or absence of the electrode 16, as is apparent from the planes S1 and S2 of FIG. Are almost the same.
【0014】図1乃至図3に示すように、セラミック基
板1上に下地絶縁膜2を形成し、下地絶縁膜2上にNi
Fe等の磁性膜により成る下部シ−ルド膜3を形成す
る。さらに、下地シールド膜3上にアルミナ等の絶縁膜
により成る下部ギャップ膜4を続けて形成する。次に、
下地ギャップ膜4上に磁気抵抗効果膜6を磁気ディスク
の浮上面Fから距離Lだけ離して形成する。この例で
は、図2と図3に示すように、磁気抵抗効果膜6は、ラ
イトヘッド素子である磁気ギャップ膜12のギャップ距
離Gdの原点(Gd=0の点)よりも深い位置から形成
され(Gd<L)、浮上面Fの機械加工により削られな
いようにする。そのため、磁気抵抗効果膜6のストライ
プ幅Wの精度は、それ自体の形成精度、すなわちホトリ
ソ技術によって決まるため高精度になる。そして、下部
ギャップ膜4上であって、かつ磁気抵抗効果膜6と浮上
面Fの間には、図示するように、アルミナ等の絶縁膜5
が形成される。As shown in FIGS. 1 to 3, a base insulating film 2 is formed on a ceramic substrate 1, and Ni is formed on the base insulating film 2.
A lower shield film 3 made of a magnetic film such as Fe is formed. Further, the lower gap film 4 made of an insulating film such as alumina is continuously formed on the base shield film 3. next,
The magnetoresistive effect film 6 is formed on the base gap film 4 at a distance L from the air bearing surface F of the magnetic disk. In this example, as shown in FIGS. 2 and 3, the magnetoresistive effect film 6 is formed from a position deeper than the origin (point of Gd = 0) of the gap distance Gd of the magnetic gap film 12 which is the write head element. (Gd <L), the air bearing surface F is prevented from being machined. Therefore, the accuracy of the stripe width W of the magnetoresistive effect film 6 is highly accurate because it is determined by the forming accuracy of itself, that is, the photolithography technique. Then, on the lower gap film 4 and between the magnetoresistive effect film 6 and the air bearing surface F, as shown in the figure, an insulating film 5 made of alumina or the like is used.
Is formed.
【0015】さらに、絶縁膜5及び磁気抵抗効果膜6及
び下部ギャップ膜4の部分上には、図2に示すように、
電極導体層7が形成される。電極導体層7は磁気抵抗効
果膜6をセンサ−として働かせるため、磁気抵抗効果膜
6に電流を供給するものであり、端子16に接続されて
いる。なお、前記したように、図3に示す断面図には、
電極導体層7は形成されていない。また、図1乃至図3
には示していないが、磁気抵抗効果膜6の磁区を制御す
るための磁区制御膜が、磁気抵抗効果膜6と同時に形成
されている。Further, on the insulating film 5, the magnetoresistive film 6 and the lower gap film 4, as shown in FIG.
The electrode conductor layer 7 is formed. The electrode conductor layer 7 supplies the current to the magnetoresistive effect film 6 in order to make the magnetoresistive effect film 6 act as a sensor, and is connected to the terminal 16. As described above, the cross-sectional view shown in FIG.
The electrode conductor layer 7 is not formed. In addition, FIGS.
Although not shown in FIG. 3, a magnetic domain control film for controlling the magnetic domains of the magnetoresistive effect film 6 is formed simultaneously with the magnetoresistive effect film 6.
【0016】さらに、電極導体層7上(図2)及び絶縁
膜5及び磁気抵抗効果膜6及び下部ギャップ膜4の一部
部分上(図3)には、アルミナ等の絶縁膜により形成さ
れた上部ギャップ膜8が形成され、さらに上部ギャップ
膜8上にはNiFe等の磁性膜により形成された上部シ
−ルド膜9と保護膜としてのアルミナ等の絶縁膜10
が、それぞれ順番に形成される。そして、絶縁膜10上
にパ−マロイ等の磁性膜をスパッタリングにより積層し
て、イオンミリング等のドライエッチング法によりパタ
−ン形成し、下部磁性膜11が形成される。Further, an insulating film such as alumina is formed on the electrode conductor layer 7 (FIG. 2) and on the insulating film 5, the magnetoresistive film 6 and a part of the lower gap film 4 (FIG. 3). An upper gap film 8 is formed, and an upper shield film 9 formed of a magnetic film such as NiFe and an insulating film 10 such as alumina as a protective film are formed on the upper gap film 8.
Are formed in order. Then, a magnetic film such as permalloy is laminated on the insulating film 10 by sputtering, and a pattern is formed by a dry etching method such as ion milling to form the lower magnetic film 11.
【0017】次に、磁気ギャップ膜12を形成し、層間
絶縁膜13、導体コイル14と順次形成していき、層間
絶縁膜13をエッチングして所定形状を得る。さらに、
パ−マロイ等の磁性膜をスパッタリングにより積層し
て、イオンミリング等のドライエッチング法によりパタ
−ン形成し、上部磁性膜15とする。Next, the magnetic gap film 12 is formed, the interlayer insulating film 13 and the conductor coil 14 are sequentially formed, and the interlayer insulating film 13 is etched to obtain a predetermined shape. further,
A magnetic film such as permalloy is laminated by sputtering, and a pattern is formed by a dry etching method such as ion milling to form the upper magnetic film 15.
【0018】ここまでの工程で、素子のコア部の形成を
完了する。最後に、リ−ド線を接続するための端子16
を形成して素子工程を完了する。The steps up to this point complete the formation of the core portion of the device. Finally, a terminal 16 for connecting the lead wire
To complete the device process.
【0019】次に、磁気ヘッドの浮上面Fの加工である
が、この工程では、ライトヘッド素子である磁気ギャッ
プ膜のギャップ距離Gdが適切な値になるように機械加
工される。ここで、適切な値とは、再生効率の点から、
Lを3μm程度以下まで加工することが望ましい。な
お、本実施例では、磁気抵抗効果膜3はギャップ距離G
d=0の位置よりも深く形成されているため、機械加工
により直接削られることはなく、磁気抵抗効果膜6が浮
上面Fに露出することはない。Next, regarding the air bearing surface F of the magnetic head, in this step, the air gap surface Gd of the magnetic gap film, which is the write head element, is machined to an appropriate value. Here, an appropriate value is, in terms of regeneration efficiency,
It is desirable to process L to about 3 μm or less. In this embodiment, the magnetoresistive effect film 3 has the gap distance G
Since it is formed deeper than the position of d = 0, it is not directly ground by machining and the magnetoresistive effect film 6 is not exposed on the air bearing surface F.
【0020】図4は、本実施例により製造されたデュア
ル磁気ヘッド素子を備えた薄膜ヘッド全体を示す断面図
である。図中、18がデュアル磁気ヘッド素子を示して
いる。FIG. 4 is a sectional view showing the entire thin film head having the dual magnetic head element manufactured according to this embodiment. In the drawing, 18 indicates a dual magnetic head element.
【0021】このようにして製造されたデュアル磁気ヘ
ッドにおける磁気抵抗効果膜6のストライプ幅Wの精度
は±0.5μm以下に押さえられ、従来技術の±1.0
μm程度に比べて大幅に精度が向上し、安定した再生特
性が得られることになる。The accuracy of the stripe width W of the magnetoresistive effect film 6 in the dual magnetic head thus manufactured is suppressed to ± 0.5 μm or less, which is ± 1.0 of the prior art.
The accuracy is significantly improved as compared with about μm, and stable reproduction characteristics can be obtained.
【0022】なお、上記実施例においては、磁気抵抗効
果素子6と浮上面Fの間に絶縁層5を設けたが、本発明
はこれに限定されるものではなく、無機層等を設けても
良い。Although the insulating layer 5 is provided between the magnetoresistive effect element 6 and the air bearing surface F in the above embodiment, the present invention is not limited to this, and an inorganic layer or the like may be provided. good.
【0023】また、上記実施例においては、絶縁膜5を
下部ギャップ膜4及び上部ギャップ膜8と別体に形成し
たが、本発明はこれに限定されるものではなく、絶縁膜
5を下部ギャップ膜4と一体に形成したり、上部ギャッ
プ膜7と一体に形成しても良い。In the above embodiment, the insulating film 5 is formed separately from the lower gap film 4 and the upper gap film 8. However, the present invention is not limited to this, and the insulating film 5 is formed in the lower gap film. It may be formed integrally with the film 4 or may be formed integrally with the upper gap film 7.
【0024】さらに、上記実施例においては、磁気抵抗
効果素子6の全体を浮上面Fに露出しないように構成し
たが、再生効率をアップするため、磁気抵抗効果素子6
の一部を浮上面Fに露出させる構造としても良い。Further, in the above embodiment, the magnetoresistive effect element 6 is not entirely exposed to the air bearing surface F, but the magnetoresistive effect element 6 is used to improve the reproduction efficiency.
A part of the above may be exposed to the air bearing surface F.
【0025】また、上記実施例は、磁気ディスク装置に
用いられるデュアル磁気ヘッドを例にして説明したが、
本発明はこれに限定されるものではなく、例えば磁気テ
ープ装置等の磁気記録媒体に用いられる磁気ヘッドに広
く応用することができる。In the above embodiment, the dual magnetic head used in the magnetic disk device is described as an example.
The present invention is not limited to this, and can be widely applied to a magnetic head used for a magnetic recording medium such as a magnetic tape device.
【0026】[0026]
【発明の効果】本発明によれば、MR素子が磁気記録媒
体対向面に露出しないため、腐食しにくくなり、さらに
ストライプ幅の値が機械加工によらないで定まるため、
従来技術に比べて格段に高精度になり、安定した再生特
性が得られる効果がある。According to the present invention, since the MR element is not exposed on the surface facing the magnetic recording medium, corrosion is unlikely to occur, and the stripe width value is determined without machining.
Compared with the conventional technique, the precision is remarkably high, and stable reproduction characteristics can be obtained.
【図1】デュアル磁気ヘッド素子の要部を示す説明図。FIG. 1 is an explanatory diagram showing a main part of a dual magnetic head element.
【図2】図1に示すデュアル磁気ヘッド素子を電極導体
層7を含む平面S1で切断したときの断面図。FIG. 2 is a cross-sectional view of the dual magnetic head element shown in FIG. 1 taken along a plane S1 including an electrode conductor layer 7.
【図3】図1に示すデュアル磁気ヘッド素子を電極導体
層7を含んでいない平面S2で切断したときの断面図。FIG. 3 is a cross-sectional view of the dual magnetic head element shown in FIG. 1 taken along a plane S2 that does not include an electrode conductor layer 7.
【図4】図1乃至図3に示すデュアル磁気ヘッド素子を
備えた薄膜ヘッド全体を示す断面図。FIG. 4 is a sectional view showing an entire thin film head including the dual magnetic head element shown in FIGS. 1 to 3;
1…セラミック基板、2…下地絶縁膜、3…下部シール
ド膜、4…下部ギャップ膜、5…絶縁膜、6…磁気抵抗
効果膜、7…電極導体層、8…上部ギャップ膜、9…上
部シールド膜、10…絶縁膜、11…下部磁性膜、12
…磁気ギャップ膜、13…層間絶縁膜、14…導体コイ
ル、15…上部磁性膜、16…端子、18…デュアル磁
気ヘッド素子。DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate, 2 ... Base insulating film, 3 ... Lower shield film, 4 ... Lower gap film, 5 ... Insulating film, 6 ... Magnetoresistive film, 7 ... Electrode conductor layer, 8 ... Upper gap film, 9 ... Upper part Shield film, 10 ... Insulating film, 11 ... Lower magnetic film, 12
... magnetic gap film, 13 ... interlayer insulating film, 14 ... conductor coil, 15 ... upper magnetic film, 16 ... terminal, 18 ... dual magnetic head element.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鍬塚 俊一郎 神奈川県小田原市国府津2880番地 株式会 社日立製作所ストレージシステム事業部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shunichiro Hozuka 2880 Kozu, Odawara City, Kanagawa Stock Company Hitachi Storage Systems Division
Claims (3)
素子とライト素子を形成したデュアル磁気ヘッドにおい
て、上記磁気抵抗効果素子がデュアル磁気ヘッドの磁気
記録媒体対向面に露出していないことを特徴とするデュ
アル磁気ヘッド。1. A dual magnetic head having a magnetoresistive effect element and a write element formed on a substrate by a thin film laminating method, wherein the magnetoresistive effect element is not exposed on a surface of the dual magnetic head facing a magnetic recording medium. Characteristic dual magnetic head.
面の間に絶縁層を設けたことを特徴とする請求項1記載
のデュアル磁気ヘッド。2. The dual magnetic head according to claim 1, wherein an insulating layer is provided between the magnetoresistive effect element and the surface facing the magnetic recording medium.
面の間隔が3μm以下であることを特徴とする請求項1
記載のデュアル磁気ヘッド。3. A gap between the magnetoresistive effect element and a magnetic recording medium facing surface is 3 μm or less.
The described dual magnetic head.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP751693A JPH06215321A (en) | 1993-01-20 | 1993-01-20 | Dual magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP751693A JPH06215321A (en) | 1993-01-20 | 1993-01-20 | Dual magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06215321A true JPH06215321A (en) | 1994-08-05 |
Family
ID=11667941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP751693A Pending JPH06215321A (en) | 1993-01-20 | 1993-01-20 | Dual magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06215321A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003010760A1 (en) * | 2001-07-23 | 2003-02-06 | International Business Machines Corporation | Read/write head assembly |
US7400474B2 (en) | 2005-10-28 | 2008-07-15 | International Business Machines Corporation | Conductive pairing for piggyback magnetic head |
-
1993
- 1993-01-20 JP JP751693A patent/JPH06215321A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003010760A1 (en) * | 2001-07-23 | 2003-02-06 | International Business Machines Corporation | Read/write head assembly |
US6760199B2 (en) | 2001-07-23 | 2004-07-06 | International Business Machines Corporation | Read/write head assembly employing independent read/write shield-pairing and charge-clamped magnetoresistive sensors |
US7400474B2 (en) | 2005-10-28 | 2008-07-15 | International Business Machines Corporation | Conductive pairing for piggyback magnetic head |
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