JP2001250205A - Thin film magnetic head and of its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film magnetic head having highly sensitive and stable reproducing performance and capable of supplying a stable longitudinal bias, in a reproducing head having a narrower gap length for reproducing a recorded signal of a short wavelength for highly recording density and its manufacturing method. SOLUTION: A lamination bias film consisting of three lamination films of a bias non-magnetic film, a bias ferromagnetic film and a bias anti- ferromagnetic film is formed on a free magnetic layer which constitutes a GMR element and the bias anti-ferromagnetic film and the bias ferromagnetic film are anti-ferromagnetically bonded to greatly stabilize the direction of magnetization of the bias ferromagnetic film. While, the free magnetic layer opposed to the bias ferromagnetic film through the bias non-magnetic film is ferromagnetically or anti-ferromgnetically bonded to the bias ferromagnetic film by selecting an appropriate film thickness of the bias non-magnetic film to give a stable longitudinal bias to the free magnetic layer. Thereby, the stable and highly sensitive reproducing characteristics causing less noise is realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to an apparatus for performing high-density recording / reproduction on a magnetic recording medium such as a magnetic disk apparatus (HDD apparatus), and particularly to a free magnetic layer of a magnetoresistive element. The present invention relates to a magnetoresistive thin film magnetic head having a high reproduction efficiency by applying a stable bias magnetic field and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, magnetic disk devices (HDD devices)
In recording / reproducing data to / from a magnetic recording medium such as the one described above, the necessity of improving the processing speed and increasing the recording capacity is increasing, and efforts to increase the recording density are being strengthened.

Hereinafter, a conventional thin film magnetic head will be described with reference to the drawings.

FIGS. 27 and 28 show a conventional thin film magnetic head. FIG. 27 is a schematic perspective view, and FIG. 28 is a schematic front view of the thin film magnetic head.

For example, many thin-film magnetic heads used for recording and reproducing signals on a magnetic recording medium in a magnetic disk drive are so-called MR (GMR) inductive composite heads as shown in FIG.

[0006] In FIG. 27, Permalloy, Al ₂ O ₃ on the Co-based amorphous magnetic film or Fe-based alloy magnetic layer lower shield layer 271 which is formed of a soft magnetic material such as, A
A lower gap insulating layer 272 is formed using a non-magnetic insulating material such as 1N or SiO _2, and a magnetoresistive element (MR element or GMR element; hereinafter, GMR)
273 is formed as a multilayer film, and the GMR element 2 is formed.
A vertical bias layer 274 is formed of a material such as a CoPt alloy on both left and right end portions of 73. Cu, Cr or Ta is formed so as to be in contact with a ridge line which is an intersection line between the upper surface of the GMR element 273 and both side surfaces thereof and to be formed on the upper surface of the vertical bias layer 274.
The electrode lead layer 275 is formed using such a material. Here, the electrode lead layer 275 may be formed so as to cover the upper surface of the vertical bias layer 274 and the upper surface of a part of the GMR element 273. Next, an upper gap insulating layer 276 is formed on the exposed portions of the electrode lead layer 275 and the GMR element 273 using the same nonmagnetic insulating material as the lower gap insulating layer 272. Furthermore,
The lower shield layer 27 is formed on the upper gap insulating layer 276.
1 using the same soft magnetic material as the upper shield layer 27.
7 to form a magnetoresistive thin-film magnetic head 278 for reproduction.

Next, a recording gap layer 279 is formed on the upper surface of the upper shield layer 277 using the same non-magnetic insulating material as the lower gap insulating layer 272, and the recording gap layer 2 is formed.
The upper magnetic pole 2 opposing the upper shield layer 277 through the upper 79 and being in contact with the upper shield layer 277 at other portions.
80 is formed using a soft magnetic material, and the upper shield layer 277 and the upper magnetic pole 280 are formed via the recording gap layer 279.
Between the portion where the upper magnetic pole 280 faces the upper shield layer 277 and the portion where the upper magnetic pole 280 contacts the upper shield layer 277.
A winding coil 281 insulated from the upper magnetic pole 7 and the upper magnetic pole 280 via an insulating material (not shown) is provided to form an inductive thin film magnetic head 282 for recording. Here, the upper shield layer 277 has a function of both the shield function of the reproducing magnetoresistive thin film magnetic head 278 and the lower magnetic pole function of the recording inductive thin film magnetic head 282.

FIG. 28 is a schematic front view showing the vicinity of a magnetoresistive element in a reproducing head of a thin film magnetic head. As shown in FIG. 28, FeMn is formed on a lower gap insulating layer 272 formed on the upper surface of a lower shield layer 271. Alloy film, PtM
an antiferromagnetic layer 283 made of a material such as an n-based alloy film;
A fixed magnetic layer 284 made of a base alloy film, a Co, CoFe alloy film, or the like, a nonmagnetic layer 285 made of a material such as Cu, a free magnetic layer 286 made of the same material as the fixed magnetic layer 284, and a material such as Ta. The cap layer 287 to be stacked is sequentially formed into a film, and the left and right side edges are scraped off by an etching process such as ion milling so as to have inclined surfaces.
73 is formed. A pair of left and right vertical bias layers 274 are formed in contact with both left and right end surfaces of the GMR element 273, and a pair of left and right electrode lead layers 275 are formed thereon.
Further, an upper gap insulating layer 276 is formed thereon, and an upper shield layer 277 is further formed thereon. In recent years, in order to reproduce a short-wavelength recording signal corresponding to a higher recording density, a reproducing head gap length 28 is required.
8 is getting smaller and smaller.

When a recording current is supplied to the winding coil 281, a recording magnetic field is generated in the upper magnetic pole 280 and the upper shield layer 277 of the recording induction type thin film magnetic head 282, and the recording magnetic field opposes via the recording gap layer 279. Upper magnetic pole 2
Leakage magnetic flux is generated between 80 and the upper shield layer 277, and a recording signal is recorded on a magnetic recording medium. Further, a signal magnetic field from the magnetic recording medium on which the signal is recorded is reproduced by the reproducing magnetoresistive thin film magnetic head unit 278, and a reproduced signal corresponding to a resistance change by the GMR element 273 is detected from a terminal of the electrode lead layer 275. I do.

[0010]

However, in order to reproduce a signal recorded on a magnetic recording medium at a short wavelength in the reproducing head portion of the thin-film magnetic head having the above-mentioned conventional structure, the reproducing head gap length is reduced. There is a need. The reproducing head gap length is the sum of the distance from the upper surface of the lower shield layer to the lower surface of the upper shield layer, that is, the sum of the thicknesses of the lower gap insulating layer, the GMR element, and the upper gap insulating layer. A pair of left and right vertical bias layers on both sides of the element approach the lower shield layer or the upper shield layer, and the magnetic field of the vertical bias layer easily escapes to the lower shield layer or the upper shield layer. A bias magnetic field is applied to the free magnetic layer in the vicinity, but the bias magnetic field is weakened in the central portion of the free magnetic layer (the part forming the head gap), the magnetization direction of the free magnetic layer becomes unstable, and noise increases. However, if a stable readout signal is not obtained and measures are taken to increase the longitudinal bias magnetic field to obtain a stable readout signal, Magnetization of the magnetic layer is stable, Barkhausen noise can be suppressed, but the sensitivity is lowered, even the inclination increases the magnetization direction of the fixed magnetic layer, there is a problem that symmetry is deteriorated.

[0011] The present invention solves the above-mentioned problems, and provides a vertical bias magnetic field applied to a free magnetic layer of a GMR element with high accuracy.
It stabilizes the direction of magnetization of the free magnetic layer, suppresses the generation of Barkhausen noise,
An object of the present invention is to provide a magnetoresistive thin-film magnetic head having good reproduction performance such as symmetry and a method for manufacturing the same.

[0012]

In order to achieve this object, a thin film magnetic head according to the present invention comprises a magnetoresistive layer in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer and a free magnetic layer are successively formed. Effect element, and a stacked bias film composed of a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film sequentially stacked on the free magnetic layer formed on the top of the magnetoresistive effect element. It has such a configuration. Further, the thin film magnetic head of the present invention has a configuration in which the bias ferromagnetic film has a magnetization direction in the track width direction. In the thin-film magnetic head of the present invention, the strength of the interlayer coupling magnetic field between the free magnetic layer forming the magnetoresistive element and the bias ferromagnetic film forming the stacked bias film is 8 kA / m or less (100 Oe or less). It has such a configuration.

With this configuration, the bias ferromagnetic film constituting the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film is easily controlled by the bias antiferromagnetic film. A magnetoresistive effect element (MR element or GMR element; hereinafter, GMR
The free magnetic layer of the element is ferromagnetically or antiferromagnetically coupled to the bias ferromagnetic film via the bias nonmagnetic film, and its magnetization direction is the same as or opposite to the bias ferromagnetic film. Therefore, the magnetization direction of the free magnetic layer can be easily controlled by the bias antiferromagnetic film, and the bias nonmagnetic layer interposed between the bias ferromagnetic film and the free magnetic layer can be easily controlled. The strength of the interlayer coupling magnetic field due to ferromagnetic or antiferromagnetic coupling between the bias ferromagnetic film and the free magnetic layer can be easily controlled by the film thickness. Therefore, regardless of the read head gap length, by controlling the bias antiferromagnetic film, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film is fixed. There is no effect on the layer, and no inclination of the magnetization of the fixed magnetic layer is caused thereby, so that the deterioration of the symmetry of the output waveform is suppressed. Further, by optimally selecting the thickness of the bias nonmagnetic film, a magnetic field strength of 8 kA / m or less can be stably given as a bias magnetic field applied from the stacked bias film to the free magnetic layer, and Barkhausen noise is reduced. Thus, it is possible to improve reproduction performance such as high reproduction sensitivity.

Further, the thin film magnetic head of the present invention comprises a magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially formed and formed; A bias non-magnetic film, a bias ferromagnetic film, and a bias anti-ferromagnetic film, which are sequentially formed on the free magnetic layer, and a stacked bias film formed on the bias anti-ferromagnetic film. It has a configuration of a pair of left and right electrode lead layers. Further, the thin-film magnetic head of the present invention comprises a magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially stacked and formed, and an uppermost part of the magnetoresistive element. A bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film, which are sequentially formed on the free magnetic layer, and at least on both left and right sides of the magnetoresistive element and the multilayer bias film, respectively. It has a configuration in which it comprises a pair of left and right electrode lead layers in contact with each other. Further, in the thin film magnetic head of the present invention, the direction of magnetization of the bias ferromagnetic film forming the stacked bias film has a track width direction, and the direction of magnetization of the free magnetic layer forming the magnetoresistive element is It has a configuration in which it is antiferromagnetically coupled to the bias ferromagnetic film and has a direction opposite to the direction of magnetization of the bias ferromagnetic film.

With this configuration, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction by controlling the bias antiferromagnetic film regardless of the reproducing head gap length. The bias magnetic field does not affect the fixed magnetic layer, and the magnetization of the fixed magnetic layer is not caused by the bias magnetic field, so that the symmetry of the output waveform is prevented from deteriorating. In addition, the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias non-magnetic film, thereby improving reproduction performance such as reducing Barkhausen noise and improving reproduction sensitivity. Can be achieved. Further, the reproduction track width can be easily controlled by the lead shape, the magnetoresistive effect element, and the stacked bias film shape. In addition, by selecting the thickness of the bias nonmagnetic film so as to antiferromagnetically couple the bias ferromagnetic film and the free magnetic layer, the leakage magnetic field due to the end face magnetic charge in the bias ferromagnetic film and the free magnetic film is reduced. The directions of the magnetizations are canceled by each other, and a more stable direction of magnetization can be obtained up to the end, the Barkhausen noise is reduced, and the reproduction performance can be improved.

Further, the thin film magnetic head of the present invention comprises: a magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer and a free magnetic layer are sequentially laminated and formed; Bias film composed of a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film sequentially formed on the free magnetic layer formed in the above manner, and left and right side surfaces of the magnetoresistive element and the multilayer bias film And a pair of left and right vertical bias layers in contact with each other. Further, the thin film magnetic head of the present invention may be arranged such that a part of the upper surface of the pair of left and right vertical bias layers or a part of the upper surface of the bias antiferromagnetic film at the top of the stacked bias film and the upper surface of the pair of left and right vertical bias layers is formed. And a pair of left and right electrode lead layers. Further, in the thin film magnetic head of the present invention, the direction of magnetization of the bias ferromagnetic film forming the stacked bias film has a track width direction, and the direction of magnetization of the free magnetic layer forming the magnetoresistive element is It has a configuration in which it is ferromagnetically coupled to the bias ferromagnetic film and has the same direction as the direction of magnetization of the bias ferromagnetic film.

With this configuration, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction by controlling the bias antiferromagnetic film regardless of the read head gap length. The bias magnetic field has no effect on the fixed magnetic layer, and no magnetization inclination of the fixed magnetic layer is caused by the bias magnetic field. In addition, the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias non-magnetic film, thereby improving reproduction performance such as reducing Barkhausen noise and improving reproduction sensitivity. Can be achieved. Also, there is an interlayer coupling magnetic field between the bias ferromagnetic film and the free magnetic layer via the bias non-magnetic film, and the bias magnetic field due to the vertical bias layer need not be large. , The inclination of the magnetization direction of the fixed magnetic layer is small, and the deterioration of the symmetry and the output of the output waveform due to the bias magnetic field from the vertical bias layer can be suppressed. Further, the reproduction track width can be easily controlled by the shape of the vertical bias layer, the shape of the GMR element and the stacked bias film, and the shape of the lead. Further, the thickness of the bias nonmagnetic film is selected so as to ferromagnetically couple the bias ferromagnetic film and the free magnetic layer, and the magnetic field applied from the vertical bias layer to the free magnetic layer and the magnetic field applied from the laminated bias layer to the free magnetic layer By making the direction of the magnetic field the same, the leakage magnetic field due to the end surface magnetic charge of the bias ferromagnetic film and the free magnetic film is canceled by the leakage magnetic field due to the end surface magnetic charge of the vertical bias layer,
A more stable magnetization direction can be obtained up to the end, Barkhausen noise is reduced, and reproduction performance can be improved.

Further, the thin-film magnetic head of the present invention has a configuration having a cap layer in contact with at least the upper surface of the bias antiferromagnetic film constituting the stacked bias film.

According to this configuration, in addition to the effects provided by the above-described configuration of the laminated bias film, the oxidation of the upper surface of the laminated bias film is prevented, the corrosion resistance is improved, and the deterioration of the characteristics due to them can be suppressed.

Further, according to the method of manufacturing a thin film magnetic head of the present invention, an antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially laminated on a lower gap insulating layer. A first step of forming a magnetoresistive element composed of a layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer; Forming a ferromagnetic film and a bias antiferromagnetic film to form a stacked bias film including a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film.

According to this method, the bias ferromagnetic film constituting the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film is easily controlled by the bias antiferromagnetic film. Can GMR
The free magnetic layer of the device is ferromagnetically or antiferromagnetically coupled to the bias ferromagnetic film via the bias nonmagnetic film, and its magnetization direction is the same as or opposite to the bias ferromagnetic film. Therefore, as a result, the magnetization direction of the free magnetic layer can be easily controlled by the bias antiferromagnetic film, and the film of the bias nonmagnetic film interposed between the bias ferromagnetic film and the free magnetic layer. Depending on the thickness, the strength of the interlayer coupling magnetic field due to the ferromagnetic or antiferromagnetic coupling between the bias ferromagnetic film and the free magnetic layer can be easily controlled. Therefore, by controlling the bias antiferromagnetic film regardless of the read head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the stacked bias film is fixed magnetically. This layer has no effect on the layer and does not cause a tilt of the magnetization of the fixed magnetic layer, thereby suppressing the deterioration of the symmetry of the output waveform, reducing Barkhausen noise, high reproduction sensitivity, and excellent reproduction performance. An effect type thin film magnetic head can be manufactured.

Further, according to the method of manufacturing a thin film magnetic head of the present invention, an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer and a free magnetic layer are sequentially laminated on a lower gap insulating layer. A first step of forming a magnetoresistive element comprising a layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer; and forming a bias nonmagnetic film and a bias on the free magnetic layer constituting the magnetoresistive element. A second step of forming a ferromagnetic film and a bias antiferromagnetic film to form a stacked bias film including a bias nonmagnetic film, a bias ferromagnetic film and a bias antiferromagnetic film; A third step of forming a pair of left and right electrode lead layers on the ferromagnetic film is provided. Further, in the method of manufacturing a thin film magnetic head of the present invention, after forming the electrode lead layer film so as to cover the bias antiferromagnetic film of the laminated bias film, the electrode is formed so that the bias antiferromagnetic film is exposed. A third step of shaving off a part of the lead layer film to form a pair of left and right electrode lead layers is provided. The method of manufacturing a thin-film magnetic head according to the present invention is further characterized in that an antiferromagnetic layer film, a pinned magnetic layer film, a non-magnetic layer film, and a free magnetic layer film are sequentially stacked and formed on the lower gap insulating layer. A first step of forming a resistive element film, and forming a bias non-magnetic layer film, a bias ferromagnetic layer film, and a bias antiferromagnetic layer film on the free magnetic layer film on the top of the magnetoresistive element film. After forming a laminated bias layer film, the left and right sides of the magnetoresistive element film and the laminated bias layer film are scraped off, respectively, and composed of an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer Forming a stacked bias film including a magnetoresistive effect element, a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film; Touch both sides And a third step of forming forms a pair of right and electrode lead layer.

By controlling the bias antiferromagnetic film irrespective of the reproducing head gap length by this method, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction. Since the bias magnetic field has no effect on the fixed magnetic layer, and no inclination of the magnetization of the fixed magnetic layer is caused by the bias magnetic field, a magnetoresistive thin film magnetic head in which the symmetry of the output waveform is prevented from deteriorating can be manufactured. In addition, since the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias nonmagnetic film, Barkhausen noise is reduced, reproduction sensitivity is high, and reproduction performance is excellent. A magnetoresistive thin-film magnetic head can be manufactured. Further, it is possible to manufacture a magnetoresistive thin film magnetic head in which the reproduction track width can be easily controlled by the lead shape, the magnetoresistive element, and the laminated bias film shape.

Further, according to the method of manufacturing a thin film magnetic head of the present invention, an antiferromagnetic layer film, a pinned magnetic layer film, a nonmagnetic layer film and a free magnetic layer film are sequentially laminated on a lower gap insulating layer. A first step of forming a magnetoresistive element film, and forming a bias non-magnetic layer film, a bias ferromagnetic layer film, and a bias antiferromagnetic film on the free magnetic layer film on the top of the magnetoresistive element film. After forming a layered film and forming a laminated bias layer film, the left and right sides of the magnetoresistive element film and the laminated bias layer film are scraped off, respectively, to form an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer and a free magnetic layer. A second step of forming a laminated bias film including a magnetoresistive element composed of layers, a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film; and a laminated portion of the magnetoresistive element and the laminated bias film. Touch the left and right sides of the A pair of left and right longitudinal bias layer and the third step of depositing formed, on a pair of longitudinal bias layer,
A fourth step of forming a pair of left and right electrode lead layers. The method of manufacturing a thin-film magnetic head according to the present invention may further comprise forming a pair of left and right electrode lead layers on the upper surfaces of the pair of left and right vertical bias layers and the left and right portions of the upper surface of the bias antiferromagnetic film. It has four steps. The method of manufacturing a thin-film magnetic head according to the present invention further comprises the steps of: forming an electrode lead layer film so as to cover the pair of left and right vertical bias layers and the bias antiferromagnetic film; A fourth step of shaving off a part of the electrode lead layer film so as to expose all or a part thereof to form a pair of left and right electrode lead layers is provided.

By controlling the bias antiferromagnetic film irrespective of the reproducing head gap length by this method, the magnetization direction of the free magnetic layer can be easily realized in the track width direction. Since the bias magnetic field has no effect on the fixed magnetic layer and the magnetization of the fixed magnetic layer is not tilted by the bias magnetic field, a magnetoresistive thin film magnetic head in which the deterioration of the symmetry of the output waveform is suppressed can be manufactured. In addition, since the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias nonmagnetic film, Barkhausen noise is reduced, reproduction sensitivity is high, and reproduction performance is excellent. A magnetoresistive thin-film magnetic head can be manufactured. Also, there is an interlayer coupling magnetic field between the bias ferromagnetic film and the free magnetic layer via the bias non-magnetic film, and the bias magnetic field due to the vertical bias layer need not be large. It is possible to manufacture a magnetoresistive thin-film magnetic head that has a small influence on the magnetic field, has a small inclination of the magnetization direction of the fixed magnetic layer, and suppresses deterioration of output waveform symmetry and output reduction due to a bias magnetic field from the vertical bias layer. it can. Further, the shape of the vertical bias layer, G
It is possible to manufacture a magnetoresistive thin film magnetic head in which the reproduction track width can be easily controlled by the MR element, the shape of the laminated bias film, and the shape of the lead.

Further, the method of manufacturing a thin film magnetic head according to the present invention comprises the steps of:
Forming a bias non-magnetic film, a bias ferromagnetic film and a bias anti-ferromagnetic film to form a stacked bias film comprising a bias non-magnetic film, a bias ferromagnetic film and a bias anti-ferromagnetic film; Forming a cap layer on the magnetic film; The method of manufacturing a thin film magnetic head according to the present invention includes a step of forming a cap layer so as to cover a pair of left and right electrode lead layers and an exposed portion of the bias antiferromagnetic film. The method of manufacturing a thin-film magnetic head according to the present invention includes a fifth step of forming a cap layer on the exposed portions of the pair of left and right electrode lead layers and the bias antiferromagnetic film. The method of manufacturing a thin-film magnetic head according to the present invention further comprises a bias non-magnetic layer film on the free magnetic layer film at the uppermost portion of the magnetoresistive element film.
After forming a bias ferromagnetic layer film and a bias antiferromagnetic layer film to form a laminated bias layer film, a cap layer film is further formed thereon, and a magnetoresistive element film, a laminated bias layer film are formed. And the left and right sides of the cap layer are cut off, and a magnetoresistive element composed of an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer and a free magnetic layer, a bias nonmagnetic film, a bias ferromagnetic film and a bias antiferromagnetic A step of forming a stacked bias film made of a film and a cap layer.

By this method, in addition to the effects provided by the formation of the laminated bias film, the upper surface of the laminated bias film is prevented from being oxidized, the corrosion resistance is improved, and the characteristics are less deteriorated. A resistance effect type thin film magnetic head can be manufactured.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the first aspect of the present invention, there is provided an electrode having a magnetoresistive element between a lower shield layer and an upper shield layer with an insulating material interposed therebetween, for flowing a signal current. A magneto-resistance effect type thin-film magnetic head comprising a lead layer, a magneto-resistance effect element in which an antiferromagnetic layer, a fixed magnetic layer, a non-magnetic layer, and a free magnetic layer are sequentially stacked and formed;
A structure comprising a bias non-magnetic film, a bias ferromagnetic film, and a bias anti-ferromagnetic film, which are sequentially stacked on the free magnetic layer formed on the uppermost portion of the magnetoresistive element. It is characterized by,
The invention according to claim 6 of the present invention is characterized in that the bias ferromagnetic film has a direction of magnetization in the track width direction, and the invention according to claim 9 of the present invention is Wherein the strength of the interlayer coupling magnetic field between the free magnetic layer forming the magnetoresistive element and the bias ferromagnetic film forming the stacked bias film is 8 kA / m or less (100 Oe or less), The bias ferromagnetic film that constitutes the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film can be easily controlled by the bias antiferromagnetic film. The free magnetic layer of the element (MR element or GMR element; hereinafter referred to as GMR element) is ferromagnetically or antiferromagnetically coupled to the bias ferromagnetic film via the bias nonmagnetic film, and its magnetization is The direction is easily oriented in the same direction or the opposite direction as the bias ferromagnetic film. Therefore, as a result, the magnetization direction of the free magnetic layer can be easily controlled by the bias antiferromagnetic film. The strength of the interlayer coupling magnetic field due to ferromagnetic or antiferromagnetic coupling between the bias ferromagnetic film and the free magnetic layer can be easily controlled by the thickness of the bias nonmagnetic film interposed between the magnetic layer and the bias nonmagnetic film. be able to. Therefore, regardless of the read head gap length, by controlling the bias antiferromagnetic film, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film is fixed. There is no effect on the layer, and no inclination of the magnetization of the fixed magnetic layer is caused thereby, so that the deterioration of the symmetry of the output waveform is suppressed. Further, by optimally selecting the thickness of the bias nonmagnetic film, a magnetic field strength of 8 kA / m or less can be stably given as a bias magnetic field applied from the stacked bias film to the free magnetic layer, and Barkhausen noise is reduced. In addition, there is an effect that the reproduction performance such as high reproduction sensitivity can be improved.

According to a second aspect of the present invention, there is provided a magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic layer, and a free magnetic layer are sequentially formed. A stacked bias film consisting of a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film, which are sequentially stacked on the top free magnetic layer, and formed on the upper surface of the bias antiferromagnetic film. Characterized by having a configuration consisting of a pair of left and right electrode lead layers,
The invention according to claim 3 of the present invention provides an antiferromagnetic layer,
A magnetoresistive element in which a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially laminated and formed, and a bias nonmagnetic layer which is sequentially laminated on a free magnetic layer formed on the top of the magnetoresistive element. A stacked bias film comprising a film, a bias ferromagnetic film and a bias antiferromagnetic film, and a pair of left and right electrode lead layers respectively in contact with at least the left and right sides of the magnetoresistive element and the stacked bias film. The invention according to claim 7 of the present invention is characterized in that the magnetization direction of the bias ferromagnetic film constituting the stacked bias film has a track width direction, and the magnetoresistive element is The magnetization direction of the free magnetic layer is
It is antiferromagnetically coupled to the bias ferromagnetic film and has a direction opposite to the direction of magnetization of the bias ferromagnetic film. The bias antiferromagnetic film is independent of the read head gap length. By controlling the magnetization direction of the free magnetic layer, the magnetization direction of the free magnetic layer can be easily realized in the track width direction, and the bias magnetic field from the stacked bias film does not affect the fixed magnetic layer. Since no inclination occurs, deterioration of the symmetry of the output waveform is suppressed. In addition, the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias non-magnetic film, thereby improving reproduction performance such as reducing Barkhausen noise and improving reproduction sensitivity. Can be achieved. Further, the reproduction track width can be easily controlled by the lead shape, the magnetoresistive effect element, and the stacked bias film shape. In addition, by selecting the thickness of the bias non-magnetic film so as to antiferromagnetically couple the bias ferromagnetic film and the free magnetic layer, the leakage magnetic field due to the end face magnetic charge in the bias ferromagnetic film and the free magnetic film is reduced. Are mutually canceled, a more stable direction of magnetization is obtained up to the end portion, Barkhausen noise is reduced, and the reproducing performance can be improved.

Further, the invention described in claim 4 of the present invention provides
An anti-ferromagnetic layer, a pinned magnetic layer, a non-magnetic layer, and a free magnetic layer are sequentially stacked on the magneto-resistive element and a free magnetic layer formed on the top of the magneto-resistive element. Composed of a bias non-magnetic film, a bias ferromagnetic film and a bias anti-ferromagnetic film, and a pair of left and right vertical bias layers respectively in contact with the left and right sides of the magnetoresistive element and the multilayer bias film. Which is characterized by having the following.
In the invention described in (1), a pair of left and right vertical bias layers or the left and right portions of the upper surface of the bias antiferromagnetic film on the top of the stacked bias film and the upper surface of the pair of left and right vertical bias layers The invention according to claim 8 of the present invention is characterized by having an electrode lead layer of
The direction of magnetization of the bias ferromagnetic film forming the stacked bias film has a track width direction, and the direction of magnetization of the free magnetic layer forming the magnetoresistive element is ferromagnetically coupled to the bias ferromagnetic film. In addition, the biasing ferromagnetic film has the same direction as the magnetization direction. By controlling the bias antiferromagnetic film regardless of the reproducing head gap length, the magnetization direction of the free magnetic layer is controlled. Can be easily realized in the track width direction, and the bias magnetic field from the laminated bias film does not affect the fixed magnetic layer, and the magnetization of the fixed magnetic layer is not caused by the bias magnetic field. Deterioration is suppressed. Also,
Since the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias non-magnetic film, improvement in reproduction performance such as low Barkhausen noise and high reproduction sensitivity is achieved. be able to. Also, there is an interlayer coupling magnetic field between the bias ferromagnetic film and the free magnetic layer via the bias non-magnetic film, and the bias magnetic field due to the vertical bias layer need not be large. Has a small effect on
The inclination of the magnetization direction of the pinned magnetic layer is small, and the deterioration of the symmetry and the output of the output waveform due to the bias magnetic field from the vertical bias layer can be suppressed. In addition, the shape of the vertical bias layer, GMR
The reproduction track width can be easily controlled by the shape of the element, the stacked bias film, and the shape of the lead. Also,
The thickness of the bias nonmagnetic film is selected so as to ferromagnetically couple the bias ferromagnetic film and the free magnetic layer, and the magnetic field applied to the free magnetic layer from the vertical bias layer and the magnetic field applied to the free magnetic layer from the stacked bias layer are selected. By making the directions the same, the leakage magnetic field due to the end surface magnetic charge of the bias ferromagnetic film and the free magnetic film is canceled by the leakage magnetic field due to the end surface magnetic charge of the vertical bias layer, and a more stable magnetization direction is obtained up to the end. In addition, Barkhausen noise is reduced and the reproduction performance can be improved.

The invention according to a tenth aspect of the present invention is characterized in that at least a cap layer in contact with the upper surface of the bias antiferromagnetic film constituting the stacked bias film is provided. In addition to the effect provided by the configuration of the bias film, the layer has the effect of preventing oxidation of the upper surface of the stacked bias film, improving the corrosion resistance, and suppressing the characteristic deterioration due to these.

According to the eleventh aspect of the present invention, an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic layer, and a free magnetic layer are sequentially formed on the lower gap insulating layer. A first step of forming a magnetoresistive element composed of a magnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer; and a bias nonmagnetic film on the free magnetic layer of the magnetoresistive element. Forming a bias ferromagnetic film and a bias antiferromagnetic film to form a stacked bias film including a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film. The bias ferromagnetic film forming the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film can be easily controlled by the bias antiferromagnetic film. Yes, GMR element The free magnetic layer is ferromagnetically or antiferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film, and the direction of its magnetization is likely to be the same or opposite to the bias ferromagnetic film. Therefore, as a result, the magnetization direction of the free magnetic layer can be easily controlled by the bias antiferromagnetic film, and the thickness of the bias nonmagnetic film interposed between the bias ferromagnetic film and the free magnetic layer. Thereby, the strength of the interlayer coupling magnetic field due to the ferromagnetic or antiferromagnetic coupling between the bias ferromagnetic film and the free magnetic layer can be easily controlled. Therefore, by controlling the bias antiferromagnetic film regardless of the read head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the stacked bias film is fixed magnetically. This layer has no effect on the layer and does not cause a tilt of the magnetization of the fixed magnetic layer, thereby suppressing the deterioration of the symmetry of the output waveform, reducing Barkhausen noise, high reproduction sensitivity, and excellent reproduction performance. The effect is that an effect type thin film magnetic head can be manufactured.

According to a twelfth aspect of the present invention, an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially laminated on a lower gap insulating layer. A first step of forming a magnetoresistive element composed of a magnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer; and a bias nonmagnetic film on the free magnetic layer of the magnetoresistive element. A second step of forming a bias ferromagnetic film and a bias antiferromagnetic film to form a stacked bias film including a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film; A third step of forming a pair of left and right electrode lead layers on the antiferromagnetic film is provided, and the invention according to claim 13 of the present invention is characterized in that: 12. In a third step, the laminated via After forming the electrode lead layer film so as to cover the bias antiferromagnetic film of the film, a part of the electrode lead layer film is scraped off so that the bias antiferromagnetic film is exposed, and a pair of left and right electrode leads is formed. And a third step of forming a layer. The invention according to claim 15 of the present invention is characterized in that:
A first step of sequentially forming an antiferromagnetic layer film, a pinned magnetic layer film, a nonmagnetic layer film, and a free magnetic layer film to form a magnetoresistive element film; A bias non-magnetic layer film, a bias ferromagnetic layer film, and a bias antiferromagnetic layer film are formed on the free magnetic layer film, and a stacked bias layer film is formed. The left and right sides of the bias layer film are scraped off, respectively, and a magnetoresistive element composed of an antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer, a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic. A second step of forming a stacked bias film made of a film, and a third step of forming and forming a pair of left and right electrode lead layers so as to be in contact with at least the left and right side surfaces of the stacked portion of the magnetoresistive element and the stacked bias film. Characterized by having By controlling the bias antiferromagnetic film regardless of the reproducing head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the stacked bias film can be easily realized. Has no effect on the pinned magnetic layer, and the magnetization of the pinned magnetic layer is not tilted thereby, so that a magnetoresistive thin-film magnetic head in which the deterioration of the symmetry of the output waveform is suppressed can be manufactured. In addition, since the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias nonmagnetic film, Barkhausen noise is reduced, reproduction sensitivity is high, and reproduction performance is excellent. A magnetoresistive thin-film magnetic head can be manufactured. In addition, there is an effect that a magnetoresistive thin film magnetic head capable of easily controlling a reproduction track width by a lead shape, a magnetoresistive element, and a laminated bias film shape can be manufactured.

According to a seventeenth aspect of the present invention, an antiferromagnetic layer film, a fixed magnetic layer film, a nonmagnetic layer film, and a free magnetic layer film are sequentially laminated on the lower gap insulating layer. A first step of forming a magnetoresistive element film, and forming a bias non-magnetic layer film, a bias ferromagnetic layer film, and a bias resistive layer on the free magnetic layer film at the uppermost portion of the magnetoresistive element film. After forming the magnetic layer film and forming the laminated bias layer film, the left and right sides of the magnetoresistive element film and the laminated bias layer film are scraped off respectively, and the antiferromagnetic layer, the fixed magnetic layer, the nonmagnetic layer, and the free layer are removed. A second step of forming a stacked bias film including a magnetoresistive element composed of a magnetic layer, a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film; I will touch the left and right sides of the laminate And a fourth step of forming and forming a pair of left and right electrode lead layers on the pair of left and right vertical bias layers. The invention according to claim 18 of the present invention is characterized in that, in the fourth step of claim 17, the upper surface of the pair of left and right vertical bias layers and the left and right portions of the upper surface of the bias antiferromagnetic film. And a fourth step of forming a pair of left and right electrode lead layers on the substrate. The invention according to a nineteenth aspect of the present invention is directed to the fourth aspect of the present invention. In the step, after the electrode lead layer film is formed so as to cover the pair of left and right vertical bias layers and the bias antiferromagnetic film, all or a part of the upper surface of the bias antiferromagnetic film is exposed. , A part of the electrode lead layer film is scraped off, and a pair of left and right electrode leads A fourth step of forming a layer is characterized in that the magnetization direction of the free magnetic layer is directed in the track width direction by controlling the bias antiferromagnetic film regardless of the read head gap length. Since the bias magnetic field from the laminated bias film does not affect the fixed magnetic layer and does not cause the magnetization of the fixed magnetic layer to be tilted, the magnetoresistance that suppresses the deterioration of the output waveform symmetry is realized. An effect type thin film magnetic head can be manufactured. In addition, since the strength of the bias magnetic field applied from the stacked bias film to the free magnetic layer can be easily controlled by the thickness of the bias nonmagnetic film, Barkhausen noise is reduced, reproduction sensitivity is high, and reproduction performance is excellent. A magnetoresistive thin-film magnetic head can be manufactured. Also, there is an interlayer coupling magnetic field between the bias ferromagnetic film and the free magnetic layer via the bias non-magnetic film, and the bias magnetic field due to the vertical bias layer need not be large. It is possible to manufacture a magnetoresistive thin-film magnetic head that has a small influence on the magnetic field, has a small inclination of the magnetization direction of the fixed magnetic layer, and suppresses deterioration of output waveform symmetry and output reduction due to a bias magnetic field from the vertical bias layer. it can. Also, the shape of the vertical bias layer, the shape of the GMR element and the stacked bias film,
This has the effect that a magnetoresistive thin-film magnetic head capable of easily controlling the reproduction track width by the lead shape can be manufactured.

According to a fourteenth aspect of the present invention, in the second step of the eleventh aspect, a bias non-magnetic film is formed on the free magnetic layer constituting the magnetoresistive element.
Forming a bias ferromagnetic film and a bias antiferromagnetic film,
Forming a stacked bias film comprising a bias non-magnetic film, a bias ferromagnetic film and a bias antiferromagnetic film, and further comprising a second step of forming a cap layer on the bias antiferromagnetic film. According to a sixteenth aspect of the present invention, a cap layer is formed to cover a pair of left and right electrode lead layers and an exposed portion of the bias antiferromagnetic film. The invention according to claim 20 of the present invention is characterized in that a cap layer is formed on the exposed portions of the pair of left and right electrode lead layers and the bias antiferromagnetic film. Fifth to deposit
The invention according to claim 21 of the present invention is characterized in that a bias non-magnetic layer film is formed on the free magnetic layer film at the uppermost part of the magnetoresistive element film. , A bias ferromagnetic layer film and a bias antiferromagnetic layer film, and a stacked bias layer film. After that, a cap layer film is further formed thereon. The left and right sides of the film and the cap layer are scraped off, and a magnetoresistive effect element composed of an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer, a bias nonmagnetic film,
It has a second step of forming a stacked bias film composed of a bias ferromagnetic film and a bias antiferromagnetic film and a cap layer. This has the effect that oxidation of the upper surface of the stacked bias film is prevented, corrosion resistance is improved, and characteristic deterioration due to these is reduced, and a magnetoresistive thin film magnetic head with excellent reproduction performance can be manufactured.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is a schematic explanatory view of a reproducing magnetoresistive thin-film magnetic head according to Embodiment 1 of the present invention, which is viewed from a head sliding surface side facing a magnetic recording medium. It is the figure which showed typically the magnetoresistive effect element vicinity seen.

In FIG. 1, Al ₂ O ₃ , AlN, or Al ₂ O ₃ formed on a lower shield layer (not shown) made of a soft magnetic material such as permalloy, Co-based amorphous magnetic film or Fe-based fine particle magnetic film. On a lower gap insulating layer (not shown) using a nonmagnetic insulating material such as SiO ₂ ,
rMn, αFe ₂ O ₄ , NiO, FeMn alloy film, Pt
An antiferromagnetic layer 1 made of a material such as a Mn-based alloy film, a fixed magnetic layer 2 made of a NiFe-based alloy film, a Co, CoFe alloy film or the like, and a nonmagnetic layer 3 made of a material such as Cu are sequentially laminated. A free magnetic layer 4 made of the same ferromagnetic material as the pinned magnetic layer 2 is formed thereon, and the antiferromagnetic layer 1, the pinned magnetic layer 2, the nonmagnetic layer 3, and the free magnetic layer 4 A magnetoresistive effect element (MR element or GMR element; hereinafter, referred to as GMR element) 5 is formed. G
A bias nonmagnetic film 6 using a nonmagnetic material such as Ru is formed on the free magnetic layer 4 of the MR element 5, and a NiFe-based alloy film, Co, CoFe alloy film or the like is formed thereon. The bias ferromagnetic film 7 to be formed is formed. Further, on the bias ferromagnetic film 7, an antiferromagnetic material different from the antiferromagnetic layer 1 of the GMR element 5 (however, in some cases, it is better not to use a metal oxide film) is used. A magnetic film 8 is formed, and a laminated bias film 9 composed of a bias nonmagnetic film 6, a bias ferromagnetic film 7, and a bias antiferromagnetic film 8 is formed. The heat treatment conditions of the antiferromagnetic layer 1 for giving the magnetization direction to the fixed magnetic layer 2 of the GMR element 5 and the bias antiferromagnetic film 8 for giving the magnetization direction to the bias ferromagnetic film 7 of the stacked bias film 9 are used. The heat treatment conditions must be different from at least one of the strength of the magnetic field applied, the processing temperature, and the processing time of the respective heat treatment conditions.
Must be different kinds of antiferromagnetic materials. Bias ferromagnetic film 7
The direction of magnetization is kept very stable in the track width direction (for example, the X or -X direction) by antiferromagnetic coupling with the bias antiferromagnetic film 8. Further, the bias ferromagnetic film 7 of the laminated bias film 9 and the free magnetic film 4 of the GMR element 5 are ferromagnetically or antiferromagnetically coupled via the bias non-magnetic film 6. The magnetization direction of the free magnetic layer 4 keeps a stable state in the same direction or the opposite direction to the magnetization direction of the bias ferromagnetic film 7 corresponding to the thickness of the interposed bias nonmagnetic film 6, Therefore, as a result, the direction of magnetization of the free magnetic layer can be easily controlled by the bias antiferromagnetic film.
The magnitude of the bias magnetic field applied from the stacked bias film 9 to the free magnetic layer 4 is changed by changing the thickness of the bias nonmagnetic film 6 so that the interlayer coupling magnetic field between the bias ferromagnetic film 7 and the free magnetic layer 4 changes. Can be easily controlled.

As shown in FIG. 2A, there is a pair of left and right electrode lead layers 21 made of a material such as Cu, Cr or Ta on them. The upper gap insulating layer is formed using the same insulating material as the lower gap insulating layer so as to cover the whole, and the upper shield layer is formed thereon further using the same soft magnetic material as the lower shield layer. Thus, a magnetoresistive thin-film magnetic head for a reproducing head is formed. In this structure, the reproduction track width can be easily controlled by the shape of the electrode lead layer 21.

It should be noted that T is so formed as to cover the upper surfaces of the exposed portions of the pair of left and right electrode lead layers 21 and the bias antiferromagnetic film 8.
It is preferable to form the cap layer 22 using a or the like as a material to prevent oxidation and improve corrosion resistance.

The direction of magnetization of the fixed magnetic layer 2 constituting the GMR element 5 is set in the Y direction (direction perpendicular to the plane of FIG. 1) perpendicular to the head sliding surface facing the magnetic recording medium.
A magnetic field is applied to the fixed magnetic layer 2 in the Y direction, and the pinned magnetic layer 2 is heat-treated (annealed) at a predetermined temperature and for a predetermined time. Is fixed in the Y direction. On the other hand, the bias direction for setting the direction of magnetization of the bias ferromagnetic film 7 to be substantially perpendicular to the direction of magnetization of the fixed magnetic layer 2 (the track width direction, ie, the X or -X direction in FIG. 1). At least one of the conditions of the strength of the magnetic field applied to the ferromagnetic film 8, the heat treatment temperature or the treatment time is different from the heat treatment conditions of the antiferromagnetic layer 1 for setting the magnetization direction of the fixed magnetic layer 2. It is necessary to select and use a material for the bias antiferromagnetic film 8 such that the direction of magnetization can be set under the conditions. These heat treatments are performed after the cap layer 22 is formed on the pair of left and right electrode lead layers 21 and after the cap layer 22, the electrode lead layer 21, the laminated bias film 9 and the GM
It is preferable to perform the process before the R element 5 is patterned into a predetermined shape and cut off.

Further, as shown in FIG. 2B, a cap layer 23 may be formed on the upper surface of the bias antiferromagnetic layer 8. In these heat treatments, the heat treatment conditions to be applied to the antiferromagnetic layer 1 for setting the magnetization direction of the fixed magnetic layer 2 and the magnetization direction as the stacked bias film 9 are also set in the same manner as the heat treatment described above. It is necessary that the heat treatment conditions to be applied to the bias antiferromagnetic film 8 be different from the above, and that the left and right electrode lead layers 21 are formed after the cap layer 23 is formed on the bias antiferromagnetic film 8. It is preferable to carry out before carrying out. In addition, before forming the left and right electrode lead layers 21, at least a part of the cap layer 23 in contact with the electrode lead layers 21 is scraped off, which also has the effect of reducing the resistance.

Further, if the thickness of the bias nonmagnetic film 6 is small, the direction of magnetization of the free magnetic layer 4 of the GMR element 5 is
Due to ferromagnetic coupling with the bias ferromagnetic film 7, the magnetization remains in the same direction as the direction of magnetization of the bias ferromagnetic film. If the thickness of the bias non-magnetic film 6 becomes larger than that, the magnetization of the free magnetic layer 4 becomes smaller. The direction is antiferromagnetically coupled with the bias ferromagnetic film 7 and becomes opposite to the direction of magnetization of the bias ferromagnetic film 7. Further, when the thickness of the bias nonmagnetic film 6 increases, the free magnetic layer 4 The magnetization direction periodically changes in the same direction or the opposite direction depending on the film thickness such that the direction of magnetization is again the same as the direction of magnetization of the bias ferromagnetic film 7, and the strength of the interlayer coupling magnetic field gradually increases. It will be attenuated.
On the other hand, FIG. 3 shows the result of simulating the relationship between the strength of the interlayer coupling magnetic field applied to the free magnetic layer and the reproduction output.
The reproduction output is very high when the intensity of the magnetic field applied to the free magnetic layer is very small as compared with the case where the intensity of the magnetic field applied to the free magnetic layer is very strong. It can be seen that it has increased. When a bias antiferromagnetic film is formed directly on the free magnetic layer as in the conventional case, the free magnetic layer and the bias antiferromagnetic film are very strongly antiferromagnetically coupled, and the free magnetic layer is formed. Is determined by the material and thickness of the bias antiferromagnetic film used, and it is very difficult to delicately control the strength of the magnetic field applied to the free magnetic layer. In particular, it is difficult to stabilize at 8 kA / m or less.

Therefore, by setting the thickness of the bias non-magnetic film 6 in an appropriate range, the direction of magnetization of the free magnetic layer 4 is the same as the direction of magnetization of the bias ferromagnetic film 7 added in the track width direction. Alternatively, the film thickness of the bias non-magnetic film 6 can be set in the opposite direction and the strength of the interlayer coupling magnetic field can be set to 8 kA / m or less (100 Oe or less), and a high reproduction output can be obtained. Can be set.

Since a bias magnetic field is applied to the free magnetic layer 4 by the interlayer coupling magnetic field, the magnetization direction of the free magnetic layer 4 can be easily oriented in the track width direction regardless of the reproducing head gap length. Has no effect on the fixed magnetic layer 2 and does not cause the inclination of the magnetization of the fixed magnetic layer 2, thereby suppressing the deterioration of the symmetry of the output waveform.

As shown in FIG. 4, the fixed magnetic layer 2 is
A first fixed magnetic layer film 41, a fixed intermediate non-magnetic layer film 42 using a non-magnetic material, and a second fixed magnetic layer film 43 are stacked to form a laminated fixed magnetic layer 44. ,
A GMR element 45 including the laminated fixed magnetic layer 44, the nonmagnetic layer 3, and the free magnetic layer 4 may be formed. According to the examination result, the thickness of the fixed intermediate nonmagnetic layer film 42 for making the first fixed magnetic layer film 41 and the second fixed magnetic layer film 43 very strongly antiferromagnetically coupled in this case. Depends on the non-magnetic material used,

[0047]

[Table 1]

The following results were obtained.

As described above, according to the first embodiment, the bias ferromagnetic film forming the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film is biased. It can be easily controlled by the antiferromagnetic film, and can be controlled by a magnetoresistive effect element (MR element or GMR
element. The free magnetic layer of the GMR element is ferromagnetically or antiferromagnetically coupled to the bias ferromagnetic film via the bias nonmagnetic film, and its magnetization direction is the same as that of the bias ferromagnetic film. The magnetization direction of the free magnetic layer can be easily controlled by the bias antiferromagnetic film, and the bias voltage between the bias ferromagnetic film and the free magnetic layer can be easily controlled. The strength of the interlayer coupling magnetic field due to ferromagnetic or antiferromagnetic coupling between the bias ferromagnetic film and the free magnetic layer can be easily controlled by the thickness of the magnetic film. Therefore, regardless of the read head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film does not affect the fixed magnetic layer. Since the inclination of the magnetization of the layer does not occur, deterioration of the symmetry of the output waveform is suppressed. Further, by optimally selecting the thickness of the bias nonmagnetic film, a magnetic field strength of 8 kA / m or less can be stably given as a bias magnetic field applied from the stacked bias film to the free magnetic layer, and Barkhausen noise is reduced. Thus, it is possible to improve reproduction performance such as high reproduction sensitivity. Further, it is possible to easily control the reproduction track width only by the lead shape.

(Embodiment 2) FIG. 5 is a schematic explanatory view of a reproducing magnetoresistive thin-film magnetic head according to Embodiment 2 of the present invention. It is the figure which showed typically the magnetoresistive effect element vicinity seen.

As shown in FIG. 5A, an antiferromagnetic layer 51, a pinned magnetic layer 52, and a nonmagnetic layer 53 are formed on a lower shield layer (not shown) and a lower gap insulating layer (not shown). And a free magnetic layer 54 are sequentially laminated to form an antiferromagnetic layer 5.
1. Fixed magnetic layer 52, non-magnetic layer 53, and free magnetic layer 5
4 is formed. Furthermore,
The bias non-magnetic film 55 and the bias ferromagnetic film 5
6 and a bias antiferromagnetic film 57 are laminated to form a laminated bias film 501. A pair of left and right electrode leads are in contact with the left and right sides of the laminated GMR element 500 and the laminated bias film 501. A layer 58 is formed. The pair of left and right electrode lead layers 58 is a GMR element 50.
It may be formed on both left and right sides of the zero and stacked bias layer 501 and a part of the upper surface of the bias antiferromagnetic film 57. Furthermore, although not shown, an upper gap insulating layer is formed using the same insulating material as the lower gap insulating layer so as to cover the entirety, and an upper shield layer is further formed thereon. Thus, a reproducing magnetoresistive thin film magnetic head is constructed. In this structure, the electrode lead layer 58
The reproduction track width can be easily controlled by the shape, the shape of the GMR element 500, and the shape of the stacked bias film 501.

A cap layer 59 made of Ta or the like is formed to cover the upper surfaces of the exposed portions of the pair of left and right electrode lead layers 58 and the bias antiferromagnetic film 57 so as to prevent oxidation and improve corrosion resistance. Needless to say, it is OK. The heat treatment conditions applied to the antiferromagnetic layer 51 for setting the magnetization direction of the fixed magnetic layer 52 are different from the heat treatment conditions applied to the bias antiferromagnetic film 57 for setting the magnetization direction as the stacked bias film 501. After the formation of the cap layer 59, the cap layer 5
9, electrode lead layer 58, laminated bias film 501 and GM
It is preferable to perform a heat treatment before the R element 500 is patterned and formed into a predetermined shape.

Further, as shown in FIG. 5B, even if a cap layer 502 is formed between a pair of left and right electrode lead layers 503 and is in contact with the exposed upper surface of the bias antiferromagnetic film 57. good. At this time, the heat treatment applied to the antiferromagnetic layer 51 for setting the magnetization direction of the fixed magnetic layer and the heat treatment applied to the bias antiferromagnetic film 57 for setting the magnetization direction as the stacked bias film 501 are performed by the cap layer. It is preferable that the step be performed after the layer 502 is formed on the bias antiferromagnetic film 57 constituting the stacked bias film 501 and before the pair of left and right electrode lead layers 503 is formed.

The free magnetic layer 54 is antiferromagnetically coupled to the bias ferromagnetic film 56 via the bias nonmagnetic film 55, and changes the magnetization direction of the bias ferromagnetic film 56 in the direction opposite to the magnetization direction to GMR. The thickness of the bias nonmagnetic film 55 is set so as to be applied to the free magnetic layer 54 of the element 500. As a result, the leakage magnetic field due to the end surface magnetic charge in the bias ferromagnetic film 56 and the free magnetic film 54 is canceled out by each other, and a more stable magnetization direction is obtained up to the end.
Barkhausen noise can be reduced.

The strength of the antiferromagnetic interlayer coupling magnetic field between the free magnetic layer 54 and the bias ferromagnetic film 56 is 8 kA /
m, the thickness of the bias non-magnetic film 55 is set so that the direction of magnetization of the free magnetic layer 54 (for example, in the X direction) is changed to the direction of magnetization of the bias ferromagnetic film 56 ( (−X direction). The relationship between the thickness of the bias nonmagnetic film 55 and the direction of magnetization of the free magnetic layer 54 and the bias ferromagnetic film 56 and the relationship between the intensity of the interlayer coupling magnetic field applied to the free magnetic layer and the reproduction output are described in the first embodiment. Is the same as Therefore, by setting the thickness of the bias nonmagnetic film 55 in an appropriate range, the strength of the interlayer coupling magnetic field that is antiferromagnetically coupled can be reduced to 8 kA / m or less.

Further, since there is no longitudinal bias layer in contact with the side surface of the GMR element for giving the direction of magnetization to the free magnetic layer as in the prior art, the magnetization direction of the fixed magnetic layer 52 is changed by the magnetic field from the longitudinal bias layer. It does not tilt and does not degrade the symmetry of the output waveform.

The free magnetic layer 54 is ferromagnetically coupled to the bias ferromagnetic film 56 via the bias non-magnetic film 55, and the direction of magnetization of the bias ferromagnetic film 56 is the same as that of the bias ferromagnetic film 56. The thickness of the bias non-magnetic film 55 is adjusted so that it is applied to the free magnetic layer 54 of the element 500 and the strength of the interlayer coupling magnetic field due to the ferromagnetic coupling is 8 kA / m or less. Even when the thickness is set and the direction of magnetization of the free magnetic layer 54 (for example, in the X direction) is the same as the direction of magnetization (X direction) of the bias ferromagnetic film 56, the end face is not affected. Although the magnetization direction is disturbed at the end due to the leakage magnetic field due to the magnetic charge, there are effects of improving the reproduction output and reducing Barkhausen noise.

It is needless to say that the pinned magnetic layer 52 may be a stacked pinned magnetic layer as in the first embodiment.

As described above, according to the second embodiment, the bias ferromagnetic film constituting the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film is biased. It can be easily controlled by an antiferromagnetic film, and can be controlled by a magnetoresistive element (MR element or GMR).
element. The free magnetic layer of the GMR element is antiferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film, and its magnetization direction is easily opposite to the direction of the bias ferromagnetic film. As a result, the magnetization direction of the free magnetic layer can be easily controlled by the bias antiferromagnetic film, and the bias direction can be controlled by the thickness of the bias nonmagnetic film interposed between the bias ferromagnetic film and the free magnetic layer. The strength of the interlayer coupling magnetic field due to the antiferromagnetic coupling between the ferromagnetic film and the free magnetic layer can be easily controlled. Therefore, regardless of the read head gap length, by controlling the bias antiferromagnetic film, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film is fixed. There is no effect on the layer, and no inclination of the magnetization of the fixed magnetic layer is caused thereby, so that the deterioration of the symmetry of the output waveform is suppressed. Also,
By optimally selecting the film thickness of the bias non-magnetic film, a magnetic field strength of 8 kA / m or less can be stably applied as a bias magnetic field applied from the laminated bias film to the free magnetic layer, and Barkhausen noise is reduced and reproduction is performed. The reproduction performance such as high sensitivity can be improved. Further, the read track width can be easily controlled by the shape of the lead, the magnetoresistive element, and the shape of the laminated bias film, and the bias non-biased so that the bias ferromagnetic film and the free magnetic layer are antiferromagnetically coupled. By selecting the film thickness of the magnetic film, the leakage magnetic field due to the end face magnetic charge in the bias ferromagnetic film and the free magnetic film is canceled by each other, and a more stable magnetization direction is obtained up to the end, and Barkhausen noise is reduced. Thus, the reproduction performance can be improved.

(Embodiment 3) FIG. 6 is a schematic explanatory view of a reproducing magnetoresistive thin-film magnetic head according to Embodiment 3 of the present invention. It is the figure which showed typically the magnetoresistive effect element vicinity seen.

In FIG. 6A, an antiferromagnetic layer 61, a fixed magnetic layer 62, a nonmagnetic layer 63, and a free magnetic layer are formed on a lower shield layer (not shown) and a lower gap insulating layer (not shown). The layer 64 is formed by sequentially laminating the layers.
1. Fixed magnetic layer 62, non-magnetic layer 63, and free magnetic layer 6
4 is formed. Furthermore,
A bias non-magnetic film 65 and a bias ferromagnetic film 6
6 and a bias antiferromagnetic film 67 are laminated to form a laminated bias film 601, and a CoPt-based alloy film is in contact with the left and right side surfaces of the laminated GMR element 600 and the laminated bias film 601, respectively. A pair of left and right vertical bias layers 68 made of a hard magnetic film such as those described above are formed. A pair of left and right electrode lead layers 69 is formed on the pair of left and right vertical bias layers 68. The pair of left and right electrode lead layers 69 may be formed on the upper surfaces of the pair of left and right vertical bias layers 68 and on a part of the exposed upper surface of the bias antiferromagnetic film 67. Furthermore, although not shown, an upper gap insulating layer is formed using the same insulating material as the lower gap insulating layer so as to cover the entirety, and an upper shield layer is further formed thereon. Thus, a reproducing magnetoresistive thin film magnetic head is constructed. In this structure, the reproduction track width can be easily controlled by the shape of the vertical bias layer 68, the shape of the GMR element 600 and the laminated bias film 601, and the shape of the electrode lead layer 69.

As in the first embodiment, the material of the bias antiferromagnetic film 67 of the stacked bias film 601 and the material of the antiferromagnetic layer 61 of the GMR element 600 are the same as those of the bias ferromagnetic film 6.
At least one of the heat treatment conditions for giving the direction of magnetization to each of the fixed magnetic layer 6 and the pinned magnetic layer 62 must be a different material.

The cap layer 60 made of Ta or the like may be formed to cover the upper surfaces of the exposed portions of the pair of left and right electrode lead layers 69 and the bias antiferromagnetic film 67 to prevent oxidation. Needless to say. At this time, the heat treatment for giving the direction of magnetization to each of the bias ferromagnetic film 66 and the pinned magnetic layer 62 is performed by the GMR element 6.
After the stacked bias film 601 is formed on the
This is preferably performed before the R element 600 and the stacked bias film 601 are cut into a trapezoidal shape. FIG.
As shown in (b), a cap layer 602 may be formed between the pair of left and right electrode lead layers 69 and in contact with the exposed upper surface of the bias antiferromagnetic film 67. At this time, the heat treatment also causes the cap layer 602 to
It is preferable to perform the process after the film is formed on the substrate 01 and before the GMR element 600, the stacked bias film 601 and the cap layer 602 are scraped into a trapezoidal shape.

The free magnetic layer 64 is formed of the bias nonmagnetic film 6
5, ferromagnetically coupled with the bias ferromagnetic film 66,
The thickness of the bias non-magnetic film 65 is set such that the same magnetization direction as that of the bias ferromagnetic film 66 is given to the free magnetic layer 64 of the GMR element 600. Thereby, the bias ferromagnetic film 66 and the free magnetic film 64
The leakage magnetic field due to the end surface magnetic charge in the vertical bias layer 68
The magnetic field is canceled by the leakage magnetic field due to the end surface magnetic charge, and a more stable magnetization direction can be obtained up to the end, and Barkhausen noise can be reduced.

The strength of the ferromagnetic interlayer coupling magnetic field between the free magnetic layer 64 and the bias ferromagnetic film 66 is 8 kA / m.
The thickness of the bias non-magnetic film 65 is set so as to have the following strength, and the direction of magnetization of the free magnetic layer 64 (for example, in the X direction) is set to the value of the magnetization of the bias ferromagnetic film 66. The direction of magnetization is the same as the direction (X direction). The relationship between the thickness of the bias nonmagnetic film 65 and the directions of magnetization of the free magnetic layer 64 and the bias ferromagnetic film 66 and the relationship between the strength of the interlayer coupling magnetic field applied to the free magnetic layer and the reproduction output are described in the first embodiment. Is the same as Therefore, by setting the thickness of the bias nonmagnetic film 65 to an appropriate range, the strength of the ferromagnetically coupled interlayer coupling magnetic field can be reduced to 8 kA / m or less.

The direction of magnetization of the vertical bias layer 68 is also
The bias ferromagnetic film 66 of the laminated bias film 601 and the free magnetic layer 64 ferromagnetically coupled thereto are magnetized so as to be in the same direction as the direction of magnetization. Stacked bias film 601
The free magnetic layer 64 has an interlayer coupling magnetic field by ferromagnetically coupling with the bias ferromagnetic film 66 of FIG. Since the magnetization direction is very stable and the magnitude of the magnetic field of the vertical bias layer 68 is not large, the influence of the vertical bias layer 68 on the magnetization direction of the fixed magnetic layer 62 is small. The inclination of the magnetization direction is small, and the deterioration of the symmetry of the reproduced waveform can be suppressed.

The bias magnetic field applied to the free magnetic layer includes an interlayer coupling magnetic field with the bias ferromagnetic film and a magnetic field from the vertical bias layer. The leakage magnetic field due to the magnetic charge may be a small magnetic field that can be canceled by the leakage magnetic field due to the end surface magnetic charge of the vertical bias layer.

It is needless to say that, similarly to the first embodiment, the fixed magnetic layer 62 may be a laminated fixed magnetic layer as shown in FIG.

As described above, according to the third embodiment, the bias ferromagnetic film forming the stacked bias film is strongly antiferromagnetically coupled to the bias antiferromagnetic film, and the direction of magnetization of the bias ferromagnetic film is changed to the bias. It can be easily controlled by the antiferromagnetic film, and the free magnetic layer of the GMR element is ferromagnetically coupled to the bias ferromagnetic film via the bias nonmagnetic film.
The direction of the magnetization is easily oriented in the same direction as the bias ferromagnetic film, so that the direction of magnetization of the free magnetic layer can be easily controlled by the bias antiferromagnetic film, and The strength of the interlayer coupling magnetic field due to ferromagnetic coupling between the bias ferromagnetic film and the free magnetic layer can be easily controlled by the thickness of the bias nonmagnetic film interposed between the magnetic layer and the bias nonmagnetic film. Therefore, regardless of the read head gap length, by controlling the bias antiferromagnetic film, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film is fixed. There is no effect on the layer, and no inclination of the magnetization of the fixed magnetic layer is caused thereby, so that the deterioration of the symmetry of the output waveform is suppressed. By optimally selecting the thickness of the bias non-magnetic film, the bias magnetic field applied from the stacked bias film to the free magnetic layer is 8
It is possible to stably provide a magnetic field strength of kA / m or less, thereby improving reproduction performance such as reducing Barkhausen noise and increasing reproduction sensitivity. Also, there is an interlayer coupling magnetic field of the free magnetic layer ferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film, and the bias magnetic field by the vertical bias layer does not need to be large. Has a small effect on the pinned magnetic layer, the inclination of the magnetization direction of the pinned magnetic layer is small, and it is possible to suppress the deterioration of output waveform symmetry and output deterioration due to the bias magnetic field from the vertical bias layer. Also, the reproduction track width can be easily controlled by the shape of the vertical bias layer, the shape of the GMR element and the stacked bias film, and the shape of the lead, so that the bias ferromagnetic film and the free magnetic layer are ferromagnetically coupled. By selecting the thickness of the bias non-magnetic film and making the direction of the magnetic field applied from the vertical bias layer to the free magnetic layer equal to the direction of the magnetic field applied from the laminated bias layer to the free magnetic layer, the end faces of the bias ferromagnetic film and the free magnetic layer The leakage magnetic field due to the magnetic charge is canceled by the leakage magnetic field due to the end surface magnetic charge of the longitudinal bias layer, a more stable direction of magnetization is obtained up to the end, and Barkhausen noise is reduced, and the reproduction performance can be improved.

In the first to third embodiments, a so-called MR element or GMR element using a nonmagnetic conductive material such as Cu as the nonmagnetic layer constituting the GMR element has been described. Needless to say, the present invention can be applied to a so-called TMR element using a non-magnetic insulating material such as Al ₂ O ₃ as the non-magnetic layer by changing the configuration of the electrode lead layer and the like.

(Embodiment 4) FIGS. 7 to 15 are schematic process diagrams for explaining a manufacturing process of a reproducing magnetoresistive thin-film magnetic head according to Embodiment 4 of the present invention. FIG. 3 is a cross-sectional view of a portion near a head sliding surface facing a recording medium, taken along a plane parallel to the head sliding surface. Hereinafter, a method of manufacturing a reproducing magnetoresistive thin film magnetic head will be described in order of each step with reference to the drawings.

[0072] As shown in FIG. 7, on the material as the base material or the like AlTiC, on the substrate 70 an insulating material such as SiO ₂ is deposited, permalloy, Co-based amorphous magnetic film or the Fe-based fine particles A lower shield layer 71 made of a soft magnetic material such as a magnetic film is formed, and Al ₂ O ₃ , Al
The lower gap insulating layer 72 is formed using a nonmagnetic insulating material such as N or SiO ₂ .

As a first step, as shown in FIG. 8, an IrMn, FeMn-based alloy film, NiMn-based alloy film, PtMn-based alloy film, αFe ₂
An antiferromagnetic layer 81 is formed using a material such as O ₃ or NiO, and a fixed magnetic layer 82 is further formed thereon using a NiFe-based alloy film, a Co or CoFe alloy film, or the like. Next, a nonmagnetic layer 83 made of Cu or the like is formed on the fixed magnetic layer 82. Further, on the non-magnetic layer 83,
The free magnetic layer 84 is formed using the same material as the pinned magnetic layer 82.
To form a GMR element 85 including an antiferromagnetic layer 81, a fixed magnetic layer 82, a nonmagnetic layer 83, and a free magnetic layer 84.

As a second step, as shown in FIG.
On the free magnetic layer 84 formed on the uppermost part of the MR element 85, a bias nonmagnetic film 9 made of a nonmagnetic material such as Ru is used.
1. Bias ferromagnetic film 92 and antiferromagnetic layer 8 using a ferromagnetic material such as a NiFe-based alloy film, Co, CoFe alloy film
The bias antiferromagnetic film 93 is formed by using an antiferromagnetic material different from that described above (however, in some cases, it is better not to use a metal oxide film). A stacked bias film 94 including a bias antiferromagnetic film 92 and a bias antiferromagnetic film 93 is formed.

As a third step, as shown in FIG.
On the bias antiferromagnetic film 93 of the laminated bias film 94,
After forming a mushroom type resist 101, Cu, Cr or Ta
A pair of left and right electrode lead layers 1 using a non-magnetic conductive material such as
02 is formed as a film.

Next, as shown in FIG. 11, an upper gap insulating layer 111 is formed on them using the same insulating material as the lower gap insulating layer 72, and Then, an upper shield layer 112 is formed using a soft magnetic material similar to that of the lower shield layer 71, and a reproducing magnetoresistive thin film magnetic head 113 is manufactured. By using this manufacturing method, the reproduction track width can be easily controlled by the shape of the electrode lead layer 102.

As a fourth step, as shown in FIG. 12, the bias antiferromagnetic film 93 of the laminated bias film 94 formed on the free magnetic layer 84 at the top of the GMR element 85 is exposed. In order to prevent oxidation of the portions and improve corrosion resistance, a step of forming a cap layer 121 with a material such as Ta on the exposed portions of the pair of left and right electrode lead layers 102 and the bias antiferromagnetic film 93 is performed. It is preferred to add.

As in the first embodiment, the GMR
A magnetic field is applied in the Y direction so that the direction of magnetization of the fixed magnetic layer 82 forming the element 85 is in the Y direction (direction perpendicular to the paper of FIG. 11) perpendicular to the head sliding surface facing the magnetic recording medium. Then, heat treatment (annealing) is performed at a predetermined temperature and time, and the magnetization direction of the fixed magnetic layer 82 is fixed in the Y direction by a coupling magnetic field due to antiferromagnetic coupling with the antiferromagnetic layer 81. On the other hand, the magnetization direction of the bias ferromagnetic film 92 of the stacked bias film 94 is set to a direction substantially perpendicular to the magnetization direction of the fixed magnetic layer 82 (in FIG. 11, the track width direction, that is, the X or -X direction). Bias ferromagnetic film 9
At least one of the conditions of the strength of the magnetic field, the heat treatment temperature, or the treatment time in the heat treatment for setting the magnetization direction of the second ferromagnetic layer is an antiferromagnetic layer for setting the magnetization direction of the fixed magnetic layer 82. The bias antiferromagnetic film 93 is made of an antiferromagnetic material different from the antiferromagnetic layer 81 of the GMR element 85 so that the direction of magnetization can be set under a condition different from the thermal condition of 81.
It is necessary to select and use it as a material for the material. Also,
In the heat treatment described above, after the cap layer 121 is formed on the pair of left and right electrode lead layers 102, and the cap layer 121, the electrode lead layer 102, the laminated bias film 94, and the GMR element 85 are formed in a predetermined shape. It is preferably performed before it is patterned and scraped off.

The method of adding the direction of magnetization to the free magnetic layer 84 is the same as that described in the first embodiment, and the bias non-magnetic film 91
By controlling the strength of the interlayer coupling magnetic field of the free magnetic layer 84 to be 8 kA / m or less by the film thickness of, the reproduction output is improved.

As a first step, as shown in FIG. 13, a first fixed magnetic layer film 131 is formed on the antiferromagnetic layer 81 formed on the lower gap insulating layer (not shown). ,
Fixed intermediate non-magnetic layer film 132, second fixed magnetic layer film 133
Are sequentially laminated to form a laminated fixed magnetic layer 134, a nonmagnetic layer 83 is further formed thereon, and a free magnetic layer 84 is further formed thereon to form a GMR element 135. Is also good.

As a second step, the GMR element 85
The upper surface of the free magnetic layer 84 formed on the uppermost layer is cleaned by a method such as pre-sputtering using Ar or ECR or the like to remove an oxide film, foreign matter, dirt, or the like on the surface of the free magnetic layer 84, and then, as shown in FIG. As shown in GMR
An antiferromagnetic material different from the bias nonmagnetic film 91, the bias ferromagnetic film 92, and the antiferromagnetic layer 81 (in some cases, a metal oxide film is The stacked anti-ferromagnetic film 93 may be formed by using the method described above. By cleaning the free magnetic layer 84, there is no foreign substance between the free magnetic layer 84 and the bias nonmagnetic film 91, and ferromagnetic coupling is performed via the bias ferromagnetic film 92 and the bias nonmagnetic film 91. Alternatively, a stable interlayer coupling magnetic field can be maintained without reducing the strength of the interlayer coupling magnetic field of the free magnetic layer 84 due to antiferromagnetic coupling. The same effect can be obtained even in a case other than the interface between the free magnetic layer 84 and the bias nonmagnetic film 91. In particular, the effect at the interface where continuous film formation in vacuum was not possible is remarkable.

As a third step, as shown in FIG. 14A, a nonmagnetic conductive material such as Cu, Cr or Ta is formed on the bias antiferromagnetic film 93 of the laminated bias film 94. An electrode lead layer film 141 is formed, and FIG.
A photoresist is applied so that the bias antiferromagnetic film 93 is exposed as shown in FIG.
May be removed to form a pair of left and right electrode lead layers 142.

As a third step, as shown in FIG. 15A, a cap layer 151 is formed on the bias antiferromagnetic film 93 of the laminated bias film 94, and then, as shown in FIG.
As shown in (b), a mushroom-type resist 152 may be formed on the cap layer film 151, and a pair of left and right electrode lead layers 153 may be formed on the bias antiferromagnetic film 93. .

As described above, according to the fourth embodiment, the bias ferromagnetic film constituting the stacked bias film is strongly coupled to the bias antiferromagnetic film by antiferromagnetic coupling, and the direction of magnetization of the bias ferromagnetic film is The free magnetic layer of the GMR element is ferromagnetically or antiferromagnetically coupled to the bias ferromagnetic film via the bias nonmagnetic film, and the direction of the magnetization is tracked. The bias ferromagnetic film and the free magnetic layer are ferromagnetically coupled or antiferromagnetic depending on the thickness of the bias nonmagnetic film interposed between the bias ferromagnetic film and the free magnetic layer. It is possible to control the strength of the interlayer coupling magnetic field that is electrically coupled to each other, and by optimally selecting the thickness of the bias nonmagnetic film, the interlayer coupling between the bias ferromagnetic film and the free magnetic layer via the bias nonmagnetic film. The field, can be stably below strength 8 kA / m in, so that the direction of the stable magnetization can be obtained. Therefore, regardless of the read head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film does not affect the fixed magnetic layer. Since no magnetization inclination of the layer occurs, deterioration of the symmetry of the output waveform is suppressed, and a magnetoresistive thin-film magnetic head with low Barkhausen noise, high reproduction sensitivity, and excellent reproduction performance can be manufactured. . Further, it is possible to manufacture a magnetoresistive thin film magnetic head in which the reproduction track width can be easily controlled only by the lead shape.

(Embodiment 5) FIGS. 16 to 21 are process schematic views for explaining a manufacturing process of a reproducing magnetoresistive thin film magnetic head according to Embodiment 5 of the present invention. FIG. 3 is a cross-sectional view of a portion near a head sliding surface facing a recording medium, taken along a plane parallel to the head sliding surface. Hereinafter, a method of manufacturing a reproducing magnetoresistive thin film magnetic head will be described in order of each step with reference to the drawings.

As in the fourth embodiment, as shown in FIG. 7, a lower shield layer 71 formed on a substrate 70 is formed.
The lower gap insulating layer 72 is formed thereon.

As a first step, as shown in FIG.
On the lower gap insulating layer 72, an antiferromagnetic layer film 161,
The fixed magnetic layer film 162, the nonmagnetic layer film 163, and the free magnetic layer film 164 are sequentially laminated and formed, and are composed of an antiferromagnetic layer film 161, a fixed magnetic layer film 162, a nonmagnetic layer film 163, and a free magnetic layer film 164. A GMR element film 165 is formed.

As a second step, as shown in FIG.
A bias non-magnetic layer film 1701, a bias ferromagnetic layer film 1702, and a bias antiferromagnetic layer film 1703 are formed on the free magnetic layer film 164 constituting the GMR element film 165 to form a stacked bias layer film 1704. After that, a mushroom-type resist 170 is formed, and both sides of the film on which the GMR element film 165 and the laminated bias layer film 1704 are laminated are etched off by a method such as etching to form the antiferromagnetic layer 17.
1. A GMR element 175 composed of a fixed magnetic layer 172, a nonmagnetic layer 173, and a free magnetic layer 174, and a laminated bias film 179 composed of a bias nonmagnetic film 176, a bias ferromagnetic film 177, and a bias antiferromagnetic film 178. Form.

As a third step, as shown in FIG.
Using the mushroom-type resist 170, a pair of left and right electrode lead layers 181 is formed on both left and right sides of the GMR element 175 and the laminated bias film 179 using a nonmagnetic material such as Cu, Cr, or Ta. In addition, a pair of left and right electrode lead layers 1
81 may be formed on the left and right side surfaces of the GMR element 175 and the stacked bias layer 179 and on a part of the upper surface of the bias antiferromagnetic film 178. In the second and third steps, the same mushroom-type resist 170 is used, but different mushroom-type resists may be used.

Next, although not shown, an upper gap insulating layer is formed using an insulating material so as to cover the pair of left and right electrode lead layers and the laminated bias film, and further, on the upper gap insulating layer, An upper shield layer is formed using a soft magnetic material to produce a reproducing magnetoresistive thin-film magnetic head. By manufacturing with this manufacturing method, the shape of the electrode lead layer 181, the GMR element 175, and the laminated bias film 1
The reproduction track width can be easily controlled by the 79 shapes.

As a fourth step, as shown in FIG. 19, the bias antiferromagnetic film 17 forming the pair of left and right electrode lead layers 181 and the exposed laminated bias film 179 is formed.
Needless to say, it is better to add a step of forming the cap layer 191 with a material such as Ta on the surface of the cap layer 8.

As in the fourth embodiment, the materials used for the antiferromagnetic layer 171 of the GMR element 175 and the bias antiferromagnetic film 178 of the stacked bias film 179 are the antiferromagnetic layer 171 and the bias antiferromagnetic film. It is necessary to use an antiferromagnetic material in which at least one of the heat treatment conditions for adding a direction of magnetization to each of the films 178 is different.

As another example, in the above-described second step, as shown in FIG. 20, a bias non-magnetic layer film 1701 and a bias non-magnetic layer film 1701 are formed on the free magnetic layer film 164 constituting the GMR element film 165. A magnetic layer film 1702 and a bias antiferromagnetic layer film 1703 are formed, and the laminated bias layer film 1 is formed.
704 is formed as a layered film, and a cap layer film 2001 is further formed thereon, and then a mushroom type resist 200 is formed.
Both sides of the film on which the GMR element film 165, the laminated bias layer film 1704, and the cap layer film 2001 are laminated are removed by a method such as etching, and the antiferromagnetic layer 20 is removed.
1, a stacked bias film 209 including a GMR element 205 composed of a fixed magnetic layer 202, a nonmagnetic layer 203, and a free magnetic layer 204, a bias nonmagnetic film 206, a bias ferromagnetic film 207, and a bias antiferromagnetic film 208; The cap layer 210 is formed.

As a third step, as shown in FIG.
A pair of left and right electrode lead layers 211 may be formed on the left and right sides of the GMR element 205, the laminated bias film 209, and the cap layer 210 using the mushroom-type resist 200.

Each heat treatment for adding a direction of magnetization to each of the antiferromagnetic layer 201 of the GMR element 205 and the bias antiferromagnetic film 208 of the stacked bias film 209 is performed after forming the cap layer 2001. G by etching
It is preferably performed before the MR element, the stacked bias film and the cap layer are formed.

The free magnetic layer is antiferromagnetically coupled to the bias ferromagnetic film through the bias nonmagnetic film, and changes the magnetization direction of the bias ferromagnetic film opposite to the magnetization direction (track width direction) to the GMR element. As given to the free magnetic layer of
Set the thickness of the bias nonmagnetic film. Thereby, the leakage magnetic field due to the end face magnetic charge in the bias ferromagnetic film and the free magnetic film is canceled by each other, a more stable magnetization direction is obtained up to the end, and Barkhausen noise can be reduced.

The thickness of the bias non-magnetic film is set so that the strength of the antiferromagnetic interlayer coupling magnetic field between the free magnetic layer and the bias ferromagnetic film is 8 kA / m or less. The direction of the magnetization of the free magnetic layer (for example, in the case of the X direction) is set to the direction of the magnetization opposite to the direction of the magnetization of the bias ferromagnetic film (the -X direction). The thickness of the bias non-magnetic film,
The relationship between the magnetization directions of the free magnetic layer and the bias ferromagnetic film is the same as in the first embodiment. Therefore, by setting the thickness of the bias nonmagnetic film in an appropriate range, the direction of magnetization of the free magnetic layer is opposite to the direction of magnetization of the bias ferromagnetic film, and antiferromagnetically coupled. The strength of the interlayer coupling magnetic field can be set to 8 kA / m or less.

Further, since there is no longitudinal bias layer in contact with the side surface of the GMR element for giving the direction of magnetization to the free magnetic layer as in the prior art, the magnetization direction of the fixed magnetic layer 52 is changed by the magnetic field from the longitudinal bias layer. It does not tilt and does not degrade the symmetry of the output waveform.

Further, since there is no vertical bias layer in contact with the side surface of the GMR element for giving the direction of magnetization to the free magnetic layer as in the prior art, a magnetic field from the vertical bias layer is applied to the direction of magnetization of the fixed magnetic layer. There is no influence, the magnetization direction of the fixed magnetic layer does not tilt, and the symmetry does not deteriorate. In addition, by setting the direction of magnetization of the free magnetic layer and the direction of magnetization of the bias ferromagnetic film to be opposite to each other, the leakage magnetic field due to the end surface magnetic charge is suppressed, and the magnetization is stabilized even at the end, so that the free magnetic property is improved. The direction of magnetization of the layer will be more stable.

The free magnetic layer is ferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film, and the direction of magnetization in the same direction as the direction of magnetization of the bias ferromagnetic film is GMR.
The thickness of the bias non-magnetic film is adjusted so as to be applied to the free magnetic layer of the element and so that the strength of the interlayer coupling magnetic field due to the ferromagnetic coupling is 8 kA / m or less. By setting the direction of magnetization of the free magnetic layer (for example, in the X direction), the direction of magnetization of the bias ferromagnetic film (X direction)
Even if the magnetization direction is the same as that of the above, the magnetization direction is disturbed at the end due to the leakage magnetic field due to the end face magnetic charge, but there is an effect of improving the reproduction output and reducing Barkhausen noise.

As described above, according to the fifth embodiment, the bias ferromagnetic film constituting the laminated bias film is strongly coupled to the bias antiferromagnetic film by antiferromagnetic coupling, and the direction of magnetization of the bias ferromagnetic film The free magnetic layer of the GMR element is antiferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film to facilitate the direction of the magnetization in the track width direction. The strength of the interlayer coupling magnetic field that is antiferromagnetically coupled between the bias ferromagnetic film and the free magnetic layer is controlled by the thickness of the bias nonmagnetic film interposed between the bias ferromagnetic film and the free magnetic layer. By optimally selecting the thickness of the bias nonmagnetic film, the interlayer coupling magnetic field between the bias ferromagnetic film and the free magnetic layer can be stably set to 8 kA /
m or less, and a stable magnetization direction can be obtained. Therefore, regardless of the read head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film does not affect the fixed magnetic layer. Since no magnetization inclination of the layer occurs, deterioration of the symmetry of the output waveform is suppressed, and a magnetoresistive thin-film magnetic head with low Barkhausen noise, high reproduction sensitivity, and excellent reproduction performance can be manufactured. . The read track width can be easily controlled by the lead shape, the GMR element, and the stacked bias film shape. By selecting the film thickness of, the leakage magnetic field due to the end face magnetic charge in the bias ferromagnetic film and the free magnetic film is canceled by each other, a more stable magnetization direction is obtained up to the end, and Barkhausen noise is small,
A magnetoresistive thin-film magnetic head having excellent reproduction performance can be manufactured.

(Embodiment 6) FIGS. 22 to 26 are schematic process diagrams for explaining a manufacturing process of a reproducing magnetoresistive thin-film magnetic head according to Embodiment 6 of the present invention. FIG. 3 is a cross-sectional view of a portion near a head sliding surface facing a recording medium, taken along a plane parallel to the head sliding surface. Hereinafter, a method of manufacturing a reproducing magnetoresistive thin film magnetic head will be described in order of each step with reference to the drawings.

As in the fifth embodiment, after the GMR element 175 and the stacked bias film 179 are formed by the first and second steps as shown in FIG.
As shown in FIG. 22, the GMR element 175
A pair of left and right vertical bias layers 221 is formed on both left and right sides of the stacked bias film 179 using a hard magnetic material such as a CoPt-based alloy film.

As a fourth step, as shown in FIG. 23A, the stacked bias film 17 on the GMR element 175 is formed.
9 using the mushroom-type resist 170 on the anti-ferromagnetic film 178 so as to be in contact with the ridge line which is the intersection of the upper surface of the GMR element 175 and both side surfaces on the pair of left and right vertical bias layers 221. A pair of left and right electrode lead layers 231 is formed. As shown in FIG. 23B, the pair of left and right electrode lead layers 231 is formed so as to cover the pair of left and right vertical bias layers 221 and a part of the upper surface of the bias antiferromagnetic film 178. It may be formed. Although the same mushroom-type resist 170 is used in the third and fourth steps, different mushroom-type resists may be used. Alternatively, as another example of the fourth step, FIGS.
As shown in (b), after forming the electrode lead layer film 241 so as to cover the pair of left and right vertical bias layers 221 and the bias antiferromagnetic film 178, a photoresist is applied and the bias antiferromagnetic film is applied. A part of the electrode lead layer film 241 may be scraped off so that all or a part of the upper surface of the film 178 is exposed, and a pair of left and right electrode lead layers 242 may be formed.

Next, although not shown, an upper gap insulating layer is formed thereon, and an upper shield layer is formed on the upper gap insulating layer. A thin-film magnetic head is manufactured. By manufacturing by this manufacturing method, the shape of the vertical bias layer 221 and the GMR element 1
75 and stacked bias film 179 shape, electrode lead layer 23
The reproduction track width can be easily controlled by the 1,242 shapes.

As a fifth step, as shown in FIG. 25, a cap layer 251 made of a material such as Ta is formed on the exposed portions of the pair of left and right electrode lead layers 231 and the bias antiferromagnetic film 178. It is preferable to add a film forming step.

Note that, as in the third embodiment, the GMR
Antiferromagnetic layer 171 and stacked bias film 17 of element 175
The antiferromagnetic material used for the bias antiferromagnetic film 178 of No. 9 is different from the antiferromagnetic material in that at least one of the heat treatment conditions for giving the magnetization direction to the fixed magnetic layer 172 or the bias ferromagnetic film 177 is different. Must be a magnetic material. Further, it is preferable to perform a heat treatment after the stacked bias layer film 1704 is formed on the GMR element film 165 and before the left and right sides are removed by etching.

FIG. 1 shows another example of the second step.
6, the upper surface of the free magnetic layer film 164 constituting the GMR element film 165 is pre-sputtered with Ar or EC.
R, etc., and the free magnetic layer film 1
After removing the oxide film, foreign matter, dirt and the like on the surface of the non-magnetic layer 64, as shown in FIG.
1. A bias ferromagnetic layer film 1702 and a bias antiferromagnetic layer film 1703 are sequentially stacked to form a mushroom resist 170, and the left and right sides of each of the stacked films are etched or the like. Shaved, antiferromagnetic layer 17
1. A GMR element 175 composed of a pinned magnetic layer 172, a nonmagnetic layer 173, and a free magnetic layer 174, and a laminated bias film 179 composed of a bias nonmagnetic film 176, a bias ferromagnetic film 177, and a bias antiferromagnetic film 178. It may be formed.

As another example of the second step, FIG.
As shown in (1), after forming the bias antiferromagnetic layer film 1703, a cap layer film 2601 is further formed thereon using a nonmagnetic material such as Ta, and a mushroom-type resist (not shown) Is formed, and the left and right sides of each of the stacked films are scraped off by a method such as etching or the like. An element 265, a stacked bias film 269 including a bias nonmagnetic film 266, a bias ferromagnetic film 267, and a bias antiferromagnetic film 268 and a cap layer 260 may be formed. At this time, heat treatment for adding a direction of magnetization to each of the fixed magnetic layer 262 and the bias ferromagnetic film 267 is performed by the cap layer 2601.
Is formed, and then the GMR element film 165 is etched.
It is preferably performed before the left and right sides of the stacked bias layer film 1704 and the cap layer film 2601 are removed.

The free magnetic layer forming the GMR element is ferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film forming the stacked bias film, and has the same direction as the direction of magnetization of the bias ferromagnetic film. The thickness of the bias non-magnetic film is set so that the magnetization direction is given to the free magnetic layer of the GMR element. Thereby, the leakage magnetic field due to the end surface magnetic charge in the bias ferromagnetic film and the free magnetic film is canceled by the leakage magnetic field due to the end surface magnetic charge in the vertical bias layer,
A more stable direction of magnetization is obtained up to the end, and Barkhausen noise can be reduced.

Further, the thickness of the bias non-magnetic film is set so that the strength of the ferromagnetic interlayer coupling magnetic field between the free magnetic layer and the bias ferromagnetic film is 8 kA / m or less.
The direction of magnetization of the free magnetic layer (for example, in the case of the X direction) is the same as the direction of magnetization of the bias ferromagnetic film (the X direction). The relationship between the thickness of the bias non-magnetic film and the direction of magnetization of the free magnetic layer and the bias ferromagnetic film, and the relationship between the intensity of the interlayer coupling magnetic field applied to the free magnetic layer and the reproduction output are the same as in the first embodiment. is there. Therefore, by setting the thickness of the bias nonmagnetic film in an appropriate range, the intensity of the ferromagnetically coupled interlayer coupling magnetic field is 8 kA /
m or less.

The magnetization direction of the vertical bias layer is also the same as the direction of magnetization of the bias ferromagnetic film of the stacked bias film and the free magnetic layer ferromagnetically coupled thereto. Since the free magnetic layer has an interlayer coupling magnetic field by being ferromagnetically coupled with the bias ferromagnetic film of the stacked bias film, the magnetization of the free magnetic layer can be performed without increasing the strength of the magnetic field of the longitudinal bias layer. Direction is very stable,
Also, since the magnitude of the magnetic field of the vertical bias layer is not large,
The influence of the longitudinal bias layer on the magnetization direction of the pinned magnetic layer is small, the magnetization direction of the pinned magnetic layer has a small inclination, and the deterioration of the symmetry of the reproduced waveform can be suppressed.

As shown in FIG. 12, an antiferromagnetic layer film 151 formed on a lower gap insulating layer (not shown)
Needless to say, a stacked fixed magnetic layer in which a first fixed magnetic layer film, a fixed intermediate nonmagnetic layer film, and a second fixed magnetic layer film are sequentially stacked may be formed thereon.

As described above, according to the sixth embodiment, the bias ferromagnetic film constituting the stacked bias film is strongly coupled to the bias antiferromagnetic film by antiferromagnetic coupling, and the direction of magnetization of the bias ferromagnetic film The free magnetic layer of the GMR element is ferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film to facilitate the direction of the magnetization in the track width direction. And controlling the strength of an interlayer coupling magnetic field ferromagnetically coupled between the bias ferromagnetic film and the free magnetic layer by the thickness of the bias nonmagnetic film interposed between the bias ferromagnetic film and the free magnetic layer. By optimally selecting the thickness of the bias non-magnetic film, the interlayer coupling magnetic field between the bias ferromagnetic film and the free magnetic layer via the bias non-magnetic film can be stably reduced to 8 kA / m or less. Can, So that the direction of the boss was magnetization can be obtained. Therefore, regardless of the read head gap length, the magnetization direction of the free magnetic layer can be easily oriented in the track width direction, and the bias magnetic field from the laminated bias film does not affect the fixed magnetic layer. Since no magnetization inclination of the layer occurs, deterioration of the symmetry of the output waveform is suppressed, and a magnetoresistive thin-film magnetic head with low Barkhausen noise, high reproduction sensitivity, and excellent reproduction performance can be manufactured. .

Further, there is an interlayer coupling magnetic field of the free magnetic layer ferromagnetically coupled to the bias ferromagnetic film via the bias non-magnetic film, and the bias magnetic field by the vertical bias layer need not be large. The effect of the bias magnetic field on the pinned magnetic layer is small, the inclination of the magnetization direction of the pinned magnetic layer is small, and the degradation of the output waveform symmetry and the output drop due to the bias magnetic field from the vertical bias layer are suppressed. A magnetic head can be manufactured.

Further, the reproduction track width can be easily controlled by the shape of the vertical bias layer, the shape of the magnetoresistive element and the laminated bias film, and the shape of the lead. The thickness of the bias non-magnetic film is selected so that the magnetic field from the vertical bias layer to the free magnetic layer is the same as the direction of the magnetic field from the stacked bias layer to the free magnetic layer. The leakage magnetic field due to the end surface magnetic charge of the free magnetic film is canceled by the stray magnetic field due to the end surface magnetic charge of the longitudinal bias layer. A magnetoresistive thin film magnetic head can be manufactured.

[0117]

As described above, the present invention provides a laminated bias comprising a laminated non-magnetic film, a bias ferromagnetic film and a bias anti-ferromagnetic film on a free magnetic layer constituting a GMR element. A film is formed, and the bias antiferromagnetic film and the bias ferromagnetic film are strongly antiferromagnetically coupled to make the direction of magnetization (track width direction) of the bias ferromagnetic film extremely stable. On the other hand, in the free magnetic layer facing the bias ferromagnetic film via the bias nonmagnetic film, as the thickness of the bias nonmagnetic film increases, the magnetization direction of the free magnetic layer at a certain thickness becomes biased ferromagnetic. In the direction opposite to the direction of the magnetization of the film, if the film thickness is further increased, the directions of the magnetizations become the same, and if the film thickness is further increased, the direction is opposite. The magnetization direction of the free magnetic layer and the bias ferromagnetic film alternates in the same direction or the opposite direction. The strength of the interlayer coupling magnetic field with the film is attenuated, and the direction of the magnetization applied to the free magnetic layer and the bias magnetic field due to the interlayer coupling magnetic field can be controlled by the thickness of the bias nonmagnetic film. Become By selecting an appropriate thickness for the bias non-magnetic film, the free magnetic layer has a stable bias so that it has the same or opposite magnetization direction as the magnetization direction of the bias ferromagnetic film. There is an effect that the strength of the magnetic field can be given, and the bias magnetic field applied to the free magnetic layer from the laminated bias film does not tilt the magnetization direction of the fixed magnetic layer, and the symmetry of the output waveform is good. , The Barkhausen noise is small, and it has the effect of improving the reproduction sensitivity.
This is very effective for a thin-film magnetic head having a narrow reproducing head gap length for reproducing a recording signal having a high recording density. Further, a thin film magnetic head having such excellent reproducing performance can be easily manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic diagram schematically illustrating a thin-film magnetic head according to a first embodiment of the present invention;

FIG. 2 is a schematic explanatory diagram of a thin-film magnetic head showing another example of the first embodiment of the present invention;

FIG. 3 is a diagram illustrating a relationship between the intensity of an interlayer coupling magnetic field added to a free magnetic layer and a reproduction output for describing Embodiment 1 of the present invention;

FIG. 4 is a schematic explanatory view of a part of a thin-film magnetic head showing another example of the first embodiment of the present invention;

FIG. 5 is a schematic diagram schematically illustrating a thin-film magnetic head according to a second embodiment of the present invention;

FIG. 6 is a schematic diagram schematically illustrating a thin-film magnetic head according to a third embodiment of the present invention;

FIG. 7 is an explanatory schematic diagram showing a part of a manufacturing process of a thin-film magnetic head according to a fourth embodiment of the present invention.

FIG. 8 is an explanatory schematic diagram showing a first step in Embodiment 4 of the present invention.

FIG. 9 is an explanatory schematic diagram showing a second step in the fourth embodiment of the present invention.

FIG. 10 is an explanatory schematic diagram showing a third step in the fourth embodiment of the present invention.

FIG. 11 is an explanatory schematic diagram showing another part of the process according to the fourth embodiment of the present invention.

FIG. 12 is an explanatory schematic diagram showing a fourth step in the fourth embodiment of the present invention.

FIG. 13 is an explanatory schematic diagram showing another example of the first step in Embodiment 4 of the present invention.

FIG. 14 is an explanatory schematic diagram showing another example of the third step in Embodiment 4 of the present invention.

FIG. 15 is an explanatory schematic diagram showing another example of the third step in Embodiment 4 of the present invention.

FIG. 16 is an explanatory schematic diagram showing a first step in Embodiment 5 of the present invention.

FIG. 17 is an explanatory schematic diagram showing a second step in the fifth embodiment of the present invention.

FIG. 18 is an explanatory schematic diagram showing a third step in the fifth embodiment of the present invention.

FIG. 19 is an explanatory schematic diagram showing a fourth step in the fifth embodiment of the present invention.

FIG. 20 is an explanatory schematic diagram showing a second step in another example of Embodiment 5 of the present invention.

FIG. 21 is an explanatory schematic diagram showing a third step in another example of the fifth embodiment of the present invention.

FIG. 22 is an explanatory schematic diagram showing a third step in the sixth embodiment of the present invention.

FIG. 23 is an explanatory schematic diagram showing a fourth step in the sixth embodiment of the present invention.

FIG. 24 is an explanatory schematic diagram showing another example of the fourth step in the sixth embodiment of the present invention.

FIG. 25 is an explanatory schematic diagram showing a fifth step in the sixth embodiment of the present invention.

FIG. 26 is an explanatory schematic diagram showing another example of the second step in the sixth embodiment of the present invention.

FIG. 27 is a schematic perspective view showing a conventional thin-film magnetic head.

FIG. 28 is a schematic front view showing a conventional thin-film magnetic head.

[Explanation of symbols]

1, 51, 61, 81, 171, 201, 261, 28
3 Antiferromagnetic layer 2, 52, 62, 82, 172, 202, 262, 28
4 Fixed magnetic layer 3, 53, 63, 83, 173, 203, 263, 28
5 Non-magnetic layer 4, 54, 64, 84, 174, 204, 264, 28
6 Free magnetic layer 5, 45, 85, 135, 175, 205, 265, 2
73, 500, 600 Magnetoresistance effect element (GMR element) 6, 55, 65, 91, 176, 206, 266 Bias nonmagnetic film 7, 56, 66, 92, 177, 207, 267 Bias ferromagnetic film 8, 57 , 67, 93, 178, 208, 268 Bias antiferromagnetic film 9, 94, 179, 209, 269, 501, 601
Stacked bias films 21, 58, 69, 102, 142, 153, 181,
211, 231, 242, 275, 503 Electrode lead layers 22, 23, 59, 60, 121, 191, 210, 2
51, 260, 287, 502, 602 Cap layers 41, 131 First fixed magnetic layer films 42, 132 Fixed intermediate non-magnetic layer films 43, 133 Second fixed magnetic layer films 44, 134 Stacked fixed magnetic layers 68, 221 274 Vertical bias layer 70 Substrate 71, 271 Lower shield layer 72, 272 Lower gap insulating layer 101, 152, 170, 200 Mushroom type resist 111, 276 Upper gap insulating layer 112, 277 Upper shield layer 113, 278 Magnetoresistance for reproduction Effect type thin film magnetic head 141, 241 Electrode lead layer film 151, 2001, 2601 Cap layer film 161 Antiferromagnetic layer film 162 Fixed magnetic layer film 163 Non-magnetic layer film 164 Free magnetic layer film 165 Magnetoresistive element film (GMR element) Film) 279 Recording gap layer 280 Upper magnetic pole 281 Winding coil 282 Inductive thin film magnetic head for recording 288 Reproducing head gap length 1701 Bias nonmagnetic layer film 1702 Bias ferromagnetic layer film 1703 Bias antiferromagnetic layer film 1704 Stacked bias layer film

Claims (21)

[Claims] 1. A magnetoresistive thin-film magnetic head having a magnetoresistive element between a lower shield layer and an upper shield layer with an insulating material interposed therebetween and comprising an electrode lead layer for flowing a signal current. A magnetoresistive element in which a ferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially stacked and formed; and a sequential lamination on the free magnetic layer formed on the top of the magnetoresistive element A thin-film magnetic head, comprising: a stacked bias film including a bias non-magnetic film, a bias ferromagnetic film, and a bias anti-ferromagnetic film. 2. A magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially stacked and formed, and the free magnetic layer formed on the top of the magnetoresistive element. A stacked bias film including a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film sequentially stacked on the layer, and a pair of left and right electrode leads formed on the upper surface of the bias antiferromagnetic film A thin-film magnetic head, comprising: 3. A magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially laminated and formed, and the free magnetic layer formed on the top of the magnetoresistive element. A stacked bias film composed of a bias non-magnetic film, a bias ferromagnetic film and a bias antiferromagnetic film sequentially formed on the layer, and contacting at least left and right side surfaces of the magnetoresistive element and the stacked bias film, respectively. A thin-film magnetic head, comprising: a pair of left and right electrode lead layers. 4. A magnetoresistive element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially stacked and formed, and the free magnetic layer formed on the top of the magnetoresistive element. A stacked bias film composed of a bias non-magnetic film, a bias ferromagnetic film and a bias antiferromagnetic film sequentially formed on the layers; and a left and right side contacting the left and right sides of the magnetoresistive element and the stacked bias film, respectively. A thin-film magnetic head having a configuration comprising a pair of vertical bias layers. 5. An upper surface of the pair of left and right vertical bias layers or a part of the upper surface of the bias antiferromagnetic film on the top of the stacked bias film and a part of the upper surface of the pair of left and right vertical bias layers. 5. The thin-film magnetic head according to claim 4, comprising a pair of left and right electrode lead layers. 6. The thin-film magnetic head according to claim 1, wherein said bias ferromagnetic film has a direction of magnetization in a track width direction. 7. The direction of magnetization of the bias ferromagnetic film forming the stacked bias film has a track width direction, and the direction of magnetization of the free magnetic layer forming the magnetoresistive element is the same as the direction of magnetization. 4. The thin film magnetic head according to claim 2, wherein the thin film magnetic head is antiferromagnetically coupled to the bias ferromagnetic film and has a direction opposite to the direction of magnetization of the bias ferromagnetic film. . 8. The direction of magnetization of the bias ferromagnetic film forming the stacked bias film has a track width direction, and the direction of magnetization of the free magnetic layer forming the magnetoresistive element is 6. The thin film magnetic head according to claim 4, wherein the thin film magnetic head is ferromagnetically coupled to the bias ferromagnetic film and has the same direction as the direction of magnetization of the bias ferromagnetic film. 9. The strength of an interlayer coupling magnetic field between the free magnetic layer forming the magnetoresistive element and the bias ferromagnetic film forming the stacked bias film is 8 kA / m or less (100 Oe or less). Claims 1 to
A thin-film magnetic head according to claim 8. 10. The thin-film magnetic head according to claim 1, further comprising a cap layer in contact with at least an upper surface of said bias antiferromagnetic film constituting said stacked bias film. 11. An antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially formed on the lower gap insulating layer, and the antiferromagnetic layer, the fixed magnetic layer, and the nonmagnetic layer are formed. Forming a magnetoresistive element composed of a layer and the free magnetic layer; and forming a bias nonmagnetic film, a bias ferromagnetic film, and a bias on the free magnetic layer constituting the magnetoresistive element. A second step of forming an antiferromagnetic film to form a stacked bias film including the bias nonmagnetic film, the bias ferromagnetic film, and the bias antiferromagnetic film. A method for manufacturing a magnetic head. 12. An antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer are sequentially stacked on the lower gap insulating layer, and the antiferromagnetic layer, the fixed magnetic layer, and the nonmagnetic layer are formed. Forming a magnetoresistive element composed of a layer and the free magnetic layer; and forming a bias nonmagnetic film, a bias ferromagnetic film, and a bias on the free magnetic layer constituting the magnetoresistive element. A second step of forming an antiferromagnetic film to form a stacked bias film including the bias nonmagnetic film, the bias ferromagnetic film, and the bias antiferromagnetic film; On the ferromagnetic film,
A third step of forming a pair of left and right electrode lead layers,
A method for manufacturing a thin-film magnetic head, comprising: 13. The method according to claim 12, wherein the bias antiferromagnetic film is exposed after forming an electrode lead layer film so as to cover the bias antiferromagnetic film of the stacked bias film. 13. The method of manufacturing a thin-film magnetic head according to claim 12, further comprising a third step of shaving off a part of the electrode lead layer film to form a pair of left and right electrode lead layers. 14. A bias non-magnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film are formed on the free magnetic layer constituting the magnetoresistive element in the second step of claim 11. Forming a stacked bias film including the bias nonmagnetic film, the bias ferromagnetic film, and the bias antiferromagnetic film, and further forming a cap layer on the bias antiferromagnetic film. The method for manufacturing a thin-film magnetic head according to any one of claims 11 to 13, wherein: 15. A method of forming a magnetoresistive element film by sequentially laminating an antiferromagnetic layer film, a pinned magnetic layer film, a nonmagnetic layer film and a free magnetic layer film on a lower gap insulating layer. 1
Forming a bias nonmagnetic layer film, a bias ferromagnetic layer film, and a bias antiferromagnetic layer film on the free magnetic layer film at the uppermost portion of the magnetoresistive element film. After forming the layer film, the left and right sides of the magnetoresistive element film and the laminated bias layer film are scraped off, respectively, to form a magnetoresistive effect comprising an antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer. A second step of forming a stacked bias film comprising an element and a bias nonmagnetic film, a bias ferromagnetic film and a bias antiferromagnetic film; and at least left and right side surfaces of a stacked portion of the magnetoresistive element and the stacked bias film. A third step of forming a pair of left and right electrode lead layers so as to be in contact with each other. 16. A pair of left and right electrode lead layers and an exposed portion of the bias antiferromagnetic film are covered.
16. The method of manufacturing a thin-film magnetic head according to claim 12, comprising a fourth step of forming a cap layer. 17. A method of forming a magnetoresistive element film by sequentially laminating an antiferromagnetic layer film, a pinned magnetic layer film, a nonmagnetic layer film and a free magnetic layer film on a lower gap insulating layer. 1
Forming a bias nonmagnetic layer film, a bias ferromagnetic layer film, and a bias antiferromagnetic layer film on the free magnetic layer film at the uppermost portion of the magnetoresistive element film. After forming the layer film, the left and right sides of the magnetoresistive element film and the laminated bias layer film are scraped off, respectively, to form a magnetoresistive effect comprising an antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer. A second step of forming a stacked bias film including an element, a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film; and contacting left and right sides of a stacked portion of the magnetoresistive element and the stacked bias film. A third step of forming a pair of left and right vertical bias layers as described above, and a fourth step of forming and forming a pair of left and right electrode lead layers on the pair of left and right vertical bias layers. Characterized by thin The method of manufacturing a magnetic head. 18. The method according to claim 17, wherein a pair of left and right electrode lead layers is formed on the upper surfaces of the pair of left and right vertical bias layers and the left and right portions of the upper surface of the bias antiferromagnetic film. The method according to claim 17, further comprising a fourth step of forming a film. 19. The method according to claim 17, wherein an electrode lead layer film is formed so as to cover the pair of left and right vertical bias layers and the bias antiferromagnetic film, and then the bias resistance is increased. 18. The method according to claim 17, further comprising a fourth step of shaving off a part of the electrode lead layer film to form a pair of left and right electrode lead layers so that all or a part of the upper surface of the magnetic film is exposed. The manufacturing method of the thin film magnetic head according to the above. 20. The method according to claim 17, further comprising a fifth step of forming a cap layer on the exposed portions of the pair of left and right electrode lead layers and the bias antiferromagnetic film. 20. The method for manufacturing a thin-film magnetic head according to any one of the above items 19. 21. A bias nonmagnetic layer film, a bias ferromagnetic layer film and a bias antiferromagnetic layer film are formed on the free magnetic layer film at the uppermost part of the magnetoresistive element film, and are laminated. After forming the bias layer film, a cap layer film is further formed thereon, and the left and right sides of the magnetoresistive element film, the laminated bias layer film and the cap layer film are scraped off, an antiferromagnetic layer, Forming a magnetoresistive element composed of a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer, a stacked bias film composed of a bias nonmagnetic film, a bias ferromagnetic film, and a bias antiferromagnetic film; 17. A method comprising the steps of:
A method for manufacturing a thin-film magnetic head according to claim 19.