JPH0621042A - Thin film formation device - Google Patents

Abstract

PURPOSE:To compose a film of good quality by emitting at least one or more radical beams and ion beams to a substrate simultaneously with vapor deposition in a vacuum vapor deposition device. CONSTITUTION:A vapor deposition material 4 is heated so that it can be deposited on a substrate 3. In the state, ion from an ion beam generator 7 and radical from radical beam generators 6, 8 are cast onto a substrate 3 while controlling an amount thereof independently. Thereby, a thin film of good quality is formed on the substrate 3 with a vapor deposition material more activated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a good quality thin film.

[0002]

2. Description of the Related Art Conventionally, a method of simultaneously irradiating an ion beam when depositing a vapor deposition material on a substrate by resistance heating or electron beam heating has been well known.

[0003]

Generally, when a film is formed by a vapor deposition apparatus that irradiates an ion beam, the film is synthesized while simultaneously irradiating the ion beam while vapor deposition. In that case, the ratio of the amount of ions and radicals cannot be controlled, the activation rate and ionization rate are low, and the production rate of the reaction product is not very high, which makes it difficult to control the composition.

An object of the present invention is to promote the activation of gas and reactants by combining an apparatus for irradiating an ion beam with vapor deposition and one or more radical beams for high-speed thin film formation. To provide a device capable of forming

[0005]

A thin film forming apparatus according to the present invention comprises a substrate holder for holding a substrate in a vacuum chamber, and a substrate holder is provided below the substrate in a vacuum chamber facing the thin film forming surface of the substrate. An evaporation source for generating and irradiating the deposited substance on the substrate, an ion beam source for irradiating the substrate with ions, and a radical beam source for irradiating the substrate with radicals. Is characterized by.

[0006]

As in the present invention, the ions and radicals generated by the ion beam generator and the radical beam generator, which are arranged so that they can be irradiated onto the substrate at the same time as the deposit, are irradiated onto the substrate, and the ions and radicals are irradiated. Since the activation can be further enhanced by independently controlling the amount of P, the thin film can be formed with good quality and at high speed.

[0007]

EXAMPLES Examples of the present invention will be described below. FIG. 1 is a diagram showing an apparatus according to an embodiment of the present invention.

A heater 15 is provided inside the vacuum chamber 1 of the apparatus.
An attached substrate holder 2 is provided, a substrate 3 is arranged, an evaporation source capable of evaporating the evaporation material 4 by resistance or electron beam heating is provided below the substrate, and the ion beam generator 7 is arranged so that the substrate 3 can be irradiated. A radical beam generator A6 and a radical beam generator B8 are installed.

The case where an AIN thin film is formed by this apparatus will be specifically described. First, use a diffusion pump or a turbo pump and an oil rotary pump to create a vacuum chamber 1
Evacuated to ⁷ Torr or less ^- the inner 1 × 10. The substrate is set to about 300 ° C., then valves 9, 10 and 11 are opened to introduce gas, and argon gas, ammonia and nitrogen gas are introduced, respectively. At this time, the shutter 17
Keep it closed. In this state, the vapor deposition material 4 AI or AIN is vaporized by activating the vapor deposition power source 5. The ion beam generator 7 is activated to generate ions, and the radical beam generators 6 and 8 are also activated to generate radicals. After the state is stabilized, the shutter 17 is opened and the film is grown.

In this embodiment, a film was formed on the silicon substrate in this state for about 10 minutes. The film thickness of the AIN film thus formed was about 1 μm. X-ray diffraction analysis of the film revealed that it was a hexagonal crystal and c-axis oriented film. An epitaxial film was obtained when synthesized on a sapphire substrate heated to about 300 ° C.

When the electromechanical coupling coefficient of this film was measured, a value of about 17.5% was obtained. This value is equal to or higher than that of a film synthesized by a normal sputtering device. Further, the composition of the thin film was measured with an X-ray microanalyzer and was about 1: 1. Comparing this with an AlN film produced by a conventional technique (for example, Proceedings of the 52nd Applied Physics Lecture, p. 413 (1991)), the film formation rate was 3 in 10 minutes.
It was 40 angstrom, and the electromechanical coupling coefficient of the conventional film was 10% or less.

As described above, it is understood that the present invention can provide a good quality thin film at a low temperature. Of course, with this apparatus, BN can be synthesized if the gas is nitrogen or ammonia and the target is boron (B), and oxides such as ZnO can be synthesized if the gas is oxygen and the target is Zn. Needless to say, a carbide such as TiC can be synthesized if the target is Ti.

[0013]

As described above, according to the present invention, the ions generated by the ion beam generator and the radicals from one or more radical generators are irradiated onto the substrate at the same time as the vapor deposition material generated by heating. By increasing the activation of the vapor deposition material, it is possible to provide a thin film forming apparatus which can form a good quality thin film at a relatively low temperature and can be applied to a functional dielectric film or a semiconductor film.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a thin film forming apparatus of one embodiment according to the present invention.

[Explanation of symbols]

 1 Vacuum Tank 2 Substrate Holder 3 Substrate 4 Vapor Deposition Material 5 Vapor Deposition Power Supply 6 Radical Beam Generator A 7 Ion Beam Generator 8 Radical Beam Generator B 9, 10, 11 Valves 12, 13, 14 Gas Inlet Pipe 15 Heater 16 Heater Power supply 17 Shutter

Claims (1)

[Claims] 1. A substrate holder for holding a substrate is provided in the vacuum chamber, and the vacuum chamber facing the thin film formation surface of the substrate is provided with:
A vapor deposition source disposed below the substrate for generating and irradiating the substrate with the vapor deposition material; an ion beam source for irradiating the substrate with ions; and a radical beam source for irradiating the substrate with radicals. A thin film forming apparatus characterized by being provided.