JPH0499172A - Device for forming thin film - Google Patents
Device for forming thin filmInfo
- Publication number
- JPH0499172A JPH0499172A JP20787490A JP20787490A JPH0499172A JP H0499172 A JPH0499172 A JP H0499172A JP 20787490 A JP20787490 A JP 20787490A JP 20787490 A JP20787490 A JP 20787490A JP H0499172 A JPH0499172 A JP H0499172A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- target
- ray source
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 11
- 230000004913 activation Effects 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 description 16
- 239000007789 gas Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は良質な薄膜を形成する装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an apparatus for forming high-quality thin films.
〔従来の技術］
従来、この種の薄膜形成装置には、レーザスパッタ法と
、デュアルイオンビームスパッタ法とが知られている。[Prior Art] Conventionally, laser sputtering and dual ion beam sputtering are known as thin film forming apparatuses of this type.
レーザスパッタ法は、高出力レーザ光をターゲット上に
集光し、スパッタによって基板上に膜を蒸着するもので
ある。In the laser sputtering method, a high-power laser beam is focused on a target, and a film is deposited on a substrate by sputtering.
また、デュアルイオンビームスパッタ法は、イオンビー
ムによってターゲットをスパッタし、かつ同時に反応性
のイオンを基板に照射することによって膜を蒸着するも
のである。Further, in the dual ion beam sputtering method, a target is sputtered using an ion beam, and a film is deposited by simultaneously irradiating a substrate with reactive ions.
しかしながら、レーザスパッタ法では、活性化率やイオ
ン化率が割合低く、反応物の生成率があまり高くないた
めに組成の制御などがなかなか難しくなっている。However, in laser sputtering, the activation rate and ionization rate are relatively low, and the production rate of reactants is not very high, making it difficult to control the composition.
また、デュアルイオンビームスパッタ法によって反応性
スパッタを行う場合、一方のイオン銃からアルゴンイオ
ンを取り出してスパッタを行い、同時にもう一つのイオ
ン銃からの反応性のイオンを基板に照射して膜を合成す
るが、アルゴンイオンでスパッタされたものと反応性イ
オンだけでは、イオン銃に用いるガスがアルゴンと反応
性ガスとの混合ガスであるために、イオン化率が割合低
く、反応物の生成率があまり高くないために組成の制御
などがなかなか難しくなっている。In addition, when performing reactive sputtering using dual ion beam sputtering, argon ions are extracted from one ion gun to perform sputtering, and at the same time reactive ions from the other ion gun are irradiated onto the substrate to synthesize a film. However, since the gas used in the ion gun is a mixture of argon and reactive gas, the ionization rate is relatively low and the rate of reaction product generation is low when using only sputtered argon ions and reactive ions. Because it is not expensive, it is difficult to control its composition.
本発明の目的は反応生成物等の活性化を高めた薄膜形成
装置を提供することにある。An object of the present invention is to provide a thin film forming apparatus in which activation of reaction products and the like is enhanced.
前記目的を達成するため、本発明に係る薄膜形成装置に
おいては、スパッタ機構と、Ｘ線源とを有する薄膜形成
装置であって、
スパッタ機構は、レーザ光をターゲット上に照射して成
膜用のスパッタを行うものであり、Ｘ線源は、基板に付
着する反応生成物にＸ線を照射して活性化するものであ
る。In order to achieve the above object, a thin film forming apparatus according to the present invention is a thin film forming apparatus having a sputtering mechanism and an X-ray source, the sputtering mechanism irradiating a target with laser light to form a film. The X-ray source activates the reaction products adhering to the substrate by irradiating them with X-rays.
また、本発明に係る薄膜形成装置においては、スパッタ
機構と、イオン銃と、Ｘ線源とを有する薄膜形成装置で
あって、
スパッタ機構は、イオンビームをターゲット上に照射し
て成膜用のスパッタを行うものであり、イオン銃は、イ
オンビームを基板に向けて照射するものであり、
Ｘ線源は、基板に付着する反応生成物にＸ線を照射して
活性化するものである。Further, the thin film forming apparatus according to the present invention is a thin film forming apparatus having a sputtering mechanism, an ion gun, and an The ion gun irradiates the substrate with an ion beam, and the X-ray source activates the reaction products attached to the substrate by irradiating them with X-rays.
基板に付着する反応生成物等をＸ線照射により活性化す
る。Reaction products adhering to the substrate are activated by X-ray irradiation.
〔実施例］ 以下、本発明の実施例を図により説明する。〔Example] Embodiments of the present invention will be described below with reference to the drawings.
（実施例１） 第１図は本発明の実施例１を示す断面図である。(Example 1) FIG. 1 is a sectional view showing a first embodiment of the present invention.
図において、装置の真空槽ｌには、内部に加熱ヒータ１
６を備えた基板ホルダ２が設けられ、基板ホルダ２には
、基板３が配置される。また真空槽ｌ外に高出力レーザ
である炭酸ガスレーザ４が設けられ、ミラー５とレンズ
６で真空槽ｌ内のターゲット７上に集光させるように設
定し、真空槽ｌに取付けたＫＢｒ窓８を通して光を真空
槽１内に導入する。さらに横方向にＸ線源９が設置され
ている。なお、１０はＢｅ窓、１１はＸ線源用電源、１
２は真空ポンプ、１３はバルブ、１４はガス導入管、１
５はシャッタ、１７はＡｃｔ！源、１８はターゲットホ
ルダである。In the figure, the vacuum chamber l of the device has a heater 1 inside.
A substrate holder 2 having a substrate holder 6 is provided, and a substrate 3 is disposed on the substrate holder 2 . A carbon dioxide laser 4, which is a high-power laser, is installed outside the vacuum chamber 1, and is set to focus the light onto a target 7 inside the vacuum chamber 1 using a mirror 5 and a lens 6. Light is introduced into the vacuum chamber 1 through. Furthermore, an X-ray source 9 is installed laterally. In addition, 10 is a Be window, 11 is a power supply for the X-ray source, 1
2 is a vacuum pump, 13 is a valve, 14 is a gas introduction pipe, 1
5 is shutter, 17 is Act! 18 is a target holder.
この装置によって、−例としてＩＮ薄膜を形成する場合
を具体的に説明する。A case in which an IN thin film is formed using this apparatus will be specifically described as an example.
まず、拡散ポンプあるいはターボポンプと油回転ポンプ
を用いて真空槽ｌ内を１×１０−“Ｔｏｒｒ以下まで排
気する。基板３の温度を約３０００℃に設定し、次にガ
スを導入するためにバルブ１３を開き、それぞれアンモ
ニアあるいは窒素ガスを導入する。シャッタ１５は閉め
ておく。この状態で炭酸ガスレーザ４を起動して高出力
レーザ光を発生させ、ＡＱあるいはＡＱＮターゲット７
上に集光してスパッタする。更に、同時にＸ線の電源１
１を所定の条件に設定して強力なＸ線を基板の直上に照
射した後、シャッタ１５を開いて膜を成長させる。First, the inside of the vacuum chamber 1 is evacuated to below 1×10 Torr using a diffusion pump or a turbo pump and an oil rotary pump.The temperature of the substrate 3 is set to about 3000°C, and then gas is introduced The valve 13 is opened to introduce ammonia or nitrogen gas, respectively.The shutter 15 is closed.In this state, the carbon dioxide laser 4 is activated to generate a high-power laser beam, and the AQ or AQN target 7 is
The light is focused on the top and sputtered. Furthermore, at the same time, the X-ray power source 1
1 to predetermined conditions to irradiate powerful X-rays directly above the substrate, then the shutter 15 is opened and a film is grown.
本実施例ではこの状態でシリコン基板上に約１０分間膜
形成を行った。このようにして形成されたＡＱＮ膜の膜
厚は約１μｍであった。その膜をＸ線回折分析を行った
ところ、六方晶、Ｃ軸配向膜であった。約３００℃に加
熱されたサファイア基板上に合成したときにはエピタキ
シャル膜が得られた。In this example, film formation was performed on the silicon substrate in this state for about 10 minutes. The thickness of the AQN film thus formed was about 1 μm. When the film was subjected to X-ray diffraction analysis, it was found to be a hexagonal crystal, C-axis oriented film. An epitaxial film was obtained when synthesized on a sapphire substrate heated to about 300°C.
また、この膜の電気機械結合係数を測定したところ、約
５％という値が得られた。この値は通常のスパッタ装置
で合成された膜以上の値である。Furthermore, when the electromechanical coupling coefficient of this film was measured, a value of about 5% was obtained. This value is higher than that of a film synthesized using a normal sputtering device.
また、薄膜の組成をＸ線マイクロアナライザで測定した
ところ約１＝１であった。Furthermore, when the composition of the thin film was measured using an X-ray microanalyzer, it was found to be approximately 1=1.
このように、本発明によって低温で良質の薄膜が得られ
ることがわかる。もちろん、この装置によってガスを窒
素、ターゲットをボロン（Ｂ）とすればＢＮが合成でき
るし、ガスを酸素、ターゲットをＺｎとすればＺｎＯの
ような酸化物も合成できるし、ガスとしてメタン、ター
ゲットをＴｉとすればＴＩＣのような炭化物も合成でき
ることは言うまでもない。Thus, it can be seen that high quality thin films can be obtained at low temperatures according to the present invention. Of course, with this device, if the gas is nitrogen and the target is boron (B), BN can be synthesized, and if the gas is oxygen and the target is Zn, oxides such as ZnO can be synthesized, and methane and target can be synthesized using this device. It goes without saying that carbides such as TIC can also be synthesized by using Ti.
（実施例２） 第２図は本発明の実施例２を示す断面図である。(Example 2) FIG. 2 is a sectional view showing a second embodiment of the present invention.
図において、装置の真空槽１には、内部に加熱ヒータ１
６を備えた基板ホルダ２が設けられ、基板ホルダ２には
基板３が配置される。基板ホルダ２より下方にターゲッ
ト４が設置され、ターゲット４にイオンを照射するイオ
ン銃１９と基板に反応性イオンを照射するイオン銃２０
とが設けられ、さらに横方向にＸ線源９が設置されてい
る。なお、ＩＯはＢｅ窓、１１はＸ線源用電源、１２は
真空ポンプ、１３゜２１．２２はバルブ、１４と２３と
２４はガス導入管、１５はシャッタである。In the figure, a vacuum chamber 1 of the device has a heater 1 inside.
A substrate holder 2 having a substrate holder 6 is provided, and a substrate 3 is arranged on the substrate holder 2. A target 4 is installed below the substrate holder 2, and includes an ion gun 19 that irradiates the target 4 with ions, and an ion gun 20 that irradiates the substrate with reactive ions.
and an X-ray source 9 is installed laterally. Note that IO is a Be window, 11 is a power source for an X-ray source, 12 is a vacuum pump, 13°21.22 is a valve, 14, 23, and 24 are gas introduction pipes, and 15 is a shutter.
この装置によって、−例としてＡＱＮ薄膜を形成する場
合を具体的に説明する。A case in which an AQN thin film is formed using this apparatus will be specifically described as an example.
まず、拡散ポンプあるいはターボポンプと油回転ポンプ
を用いて真空槽１内をｌ Ｘ １０−’ Ｔｏｒｒ以下
まで排気する。基板３の温度を約３００℃に設定し、次
にガスを導入するためにバルブ２２，２１．１３を開き
、イオン銃】９．イオン銃２０．真空槽１にそれぞれア
ルゴン、アルゴンと窒素、窒素を導入する。シャッタ１
５は閉めておく。この状態で２つのイオン銃１９、２０
に高圧電圧を印加し、放電を起こす。更に、Ｘ線の電源
９を所定の条件に設定して強力なＸ線を基板の直上に照
射しながらシャッタ１５を開き、膜を成長させる。First, the inside of the vacuum chamber 1 is evacuated to below 1.times.10-' Torr using a diffusion pump or a turbo pump and an oil rotary pump. Set the temperature of the substrate 3 to about 300°C, then open the valves 22, 21.13 to introduce gas, and use the ion gun]9. Ion gun 20. Argon, argon and nitrogen, and nitrogen are introduced into the vacuum chamber 1, respectively. shutter 1
5 is closed. In this state, the two ion guns 19 and 20
A high voltage is applied to cause a discharge. Further, the X-ray power source 9 is set to predetermined conditions, and the shutter 15 is opened while irradiating powerful X-rays directly onto the substrate to grow the film.
本実施例ではこの状態でシリコン基板上に約１０分間膜
形成を行った。このようにして形成されたＡＱＮ膜の膜
厚は約１ｐｍであった。その膜をＸ線回折分析を行った
ところ、六方晶、Ｃ軸配向膜であった。約３００℃に加
熱されたサファイア基板上に合成したときにはエピタキ
シャル膜が得られた。In this example, film formation was performed on the silicon substrate in this state for about 10 minutes. The thickness of the AQN film thus formed was about 1 pm. When the film was subjected to X-ray diffraction analysis, it was found to be a hexagonal crystal, C-axis oriented film. An epitaxial film was obtained when synthesized on a sapphire substrate heated to about 300°C.
また、この膜の電気機械結合係数を測定したところ、約
５％という値が得られた。この値は通常のスパッタ装置
で合成された膜以上の値である。Furthermore, when the electromechanical coupling coefficient of this film was measured, a value of about 5% was obtained. This value is higher than that of a film synthesized using a normal sputtering device.
また、薄膜の組成をＸ線マイクロアナライザで測定した
ところ約ｌ：ｌであった。Furthermore, the composition of the thin film was measured using an X-ray microanalyzer and was approximately 1:1.
このように、本発明によって低温で良質の薄膜が得られ
ることがわかる。もちろん、この装置によってガスを窒
素、ターゲットをボロン（Ｂ）とすればＢＮが合成でき
、ガスを酸素、ターゲットをＺｎとすればＺｎＯのよう
な酸化物も合成でき、ガスとしてメタン、ターゲットを
ＴｉとすればＴＩＣのような炭化物も合成できることは
言うまでもない。Thus, it can be seen that high quality thin films can be obtained at low temperatures according to the present invention. Of course, with this device, if the gas is nitrogen and the target is boron (B), BN can be synthesized, if the gas is oxygen and the target is Zn, oxides such as ZnO can be synthesized, and if the gas is methane and the target is Ti, it is possible to synthesize oxides such as ZnO. It goes without saying that carbides such as TIC can also be synthesized.
以上説明したとおり、本発明によれば高出力レーザ光に
よる反応生成物にＸ線を照射して反応生成物の活性化を
高めることによって、比較的低温で良質な薄膜を形成で
き、機能性誘電体膜や半導体膜などにも応用できる。As explained above, according to the present invention, a high-quality thin film can be formed at a relatively low temperature by irradiating the reaction product with X-rays using high-power laser light to increase the activation of the reaction product, and a functional dielectric film can be formed at a relatively low temperature. It can also be applied to body membranes and semiconductor membranes.
さらに、デュアルイオンビームスパッタによる反応生成
物にＸ線を照射して反応生成物の活性化を高めることに
よって、比較的低温で良質な薄膜を形成でき、機能性誘
電体膜や半導体膜などへの応用も可能な薄膜形成装置を
提供することができる。Furthermore, by irradiating the reaction products of dual ion beam sputtering with X-rays to increase the activation of the reaction products, it is possible to form high-quality thin films at relatively low temperatures, which can be used for functional dielectric films, semiconductor films, etc. It is possible to provide a thin film forming apparatus that can also be applied.
第１図は本発明の実施例１を示す断面図、第２図は本発
明の実施例２を示す断面図である。
１・・・真空槽 ３・・・基板４・・・炭
酸ガスレーザ ７・・・ターゲット９・・・Ｘ線源
１９．２０・・・イオン銃ズ広６ンプへ
第１図FIG. 1 is a sectional view showing a first embodiment of the present invention, and FIG. 2 is a sectional view showing a second embodiment of the present invention. 1... Vacuum chamber 3... Substrate 4... Carbon dioxide laser 7... Target 9... X-ray source 19.20... To ion gun wide 6 pump Figure 1
Claims (2)
であって、 スパッタ機構は、レーザ光をターゲット上に照射して成
膜用のスパッタを行うものであり、Ｘ線源は、基板に付
着する反応生成物にＸ線を照射して活性化するものであ
ることを特徴とする薄膜形成装置。(1) A thin film forming apparatus having a sputtering mechanism and an X-ray source, the sputtering mechanism performs sputtering for film formation by irradiating a laser beam onto a target, and the X-ray source 1. A thin film forming apparatus characterized in that a reaction product adhering to a thin film is activated by irradiating X-rays onto the reaction product.
薄膜形成装置であって、 スパッタ機構は、イオンビームをターゲット上に照射し
て成膜用のスパッタを行うものであり、イオン銃は、イ
オンビームを基板に向けて照射するものであり、 Ｘ線源は、基板に付着する反応生成物にＸ線を照射して
活性化するものであることを特徴とする薄膜形成装置。(2) A thin film forming apparatus having a sputtering mechanism, an ion gun, and an X-ray source, where the sputtering mechanism performs sputtering for film formation by irradiating an ion beam onto a target; A thin film forming apparatus characterized in that the ion beam is irradiated toward the substrate, and the X-ray source is irradiated with X-rays to activate reaction products adhering to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20787490A JPH0499172A (en) | 1990-08-06 | 1990-08-06 | Device for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20787490A JPH0499172A (en) | 1990-08-06 | 1990-08-06 | Device for forming thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499172A true JPH0499172A (en) | 1992-03-31 |
Family
ID=16546985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20787490A Pending JPH0499172A (en) | 1990-08-06 | 1990-08-06 | Device for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499172A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130115138A (en) * | 2012-04-11 | 2013-10-21 | 무라다기카이가부시끼가이샤 | Transfer device |
-
1990
- 1990-08-06 JP JP20787490A patent/JPH0499172A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130115138A (en) * | 2012-04-11 | 2013-10-21 | 무라다기카이가부시끼가이샤 | Transfer device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0499172A (en) | Device for forming thin film | |
| JPH05311429A (en) | Thin film forming device | |
| JPH05255859A (en) | Thin film forming equipment | |
| JP2002110551A (en) | Method and apparatus for forming semiconductor thin film | |
| JPS61236691A (en) | Vapor phase synthesis of diamond | |
| JPH02230734A (en) | Thin film formation device | |
| JPH04128380A (en) | Thin film forming device | |
| JP4782314B2 (en) | Plasma source and compound thin film forming apparatus | |
| JPH03223459A (en) | Thin-film forming device | |
| JPH02232372A (en) | Thin-film forming device | |
| JPH04128382A (en) | Thin film forming device | |
| JPS6293366A (en) | Manufacture of boron nitride film | |
| JPH01104763A (en) | Production of thin metal compound film | |
| JP2525910B2 (en) | Laser excited thin film formation method | |
| JPH0361371A (en) | Thin film forming device | |
| JPH0621042A (en) | Thin film formation device | |
| JPS6058197B2 (en) | Diamond vapor phase synthesis method | |
| JPH05304104A (en) | Film deposition system | |
| JPS62214179A (en) | Thin film forming device | |
| JPH0318500Y2 (en) | ||
| JPH03223466A (en) | Thin-film forming device | |
| JPH05193916A (en) | Thin titanium nitride film | |
| JPH0292891A (en) | Molecular beam epitaxial growth process and apparatus therefor | |
| JPS61209990A (en) | Gas phase synthesizing method for diamond | |
| JPS61201694A (en) | Vapor phase synthesis method for diamond |