JPH01179410A - Method and apparatus for forming thin film by cvd - Google Patents

Method and apparatus for forming thin film by cvd

Info

Publication number
JPH01179410A
JPH01179410A JP63001705A JP170588A JPH01179410A JP H01179410 A JPH01179410 A JP H01179410A JP 63001705 A JP63001705 A JP 63001705A JP 170588 A JP170588 A JP 170588A JP H01179410 A JPH01179410 A JP H01179410A
Authority
JP
Japan
Prior art keywords
substrate
vacuum chamber
absorbed
temperature
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63001705A
Inventor
Kumiko Katsurai
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP63001705A priority Critical patent/JPH01179410A/en
Publication of JPH01179410A publication Critical patent/JPH01179410A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent the mixing of impurities into a grown thin film by a method wherein reaction gas in a solid phase or a liquid phase is absorbed into a substrate in the first vacuum chamber, and energy rays are made to irradiate on the gas absorbed into the substrate.
CONSTITUTION: The substrate holder 4, on which a substrate S is installed, is placed on the supporting stand 3 located in the first vacuum chamber 1A. The temperature of the substrate S is brought to the liquefying temperature or the solidifying temperature or below of reaction gas by the temperature adjusting means 10 located in the supporting stand 3. As a result, the reaction gas introduced into the vacuum chamber 1A is absorbed to the substrate S in a liquid phase or in a solid phase. Then, the substrate S passes through an aperture part 12 together with the holder 4, it is shifted to the second vacuum chamber 1B and placed on the supporting stand 3. The energy rays such as the ultraviolet rays and the like sent from a light source 5 are projected on the reaction gas absorbed to the substrate S through an optical system 6 and a window 7. A photochemical reaction is generated and a thin film is formed on the substrate S. As reactive gas is not diffused in the vacuum chamber 1B, no reaction product is adhered to the inner wall of the vacuum chamber 1B, and the cause of mixing impurities into a film can be removed.
COPYRIGHT: (C)1989,JPO&Japio
JP63001705A 1988-01-07 1988-01-07 Method and apparatus for forming thin film by cvd Pending JPH01179410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63001705A JPH01179410A (en) 1988-01-07 1988-01-07 Method and apparatus for forming thin film by cvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63001705A JPH01179410A (en) 1988-01-07 1988-01-07 Method and apparatus for forming thin film by cvd

Publications (1)

Publication Number Publication Date
JPH01179410A true JPH01179410A (en) 1989-07-17

Family

ID=11508968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63001705A Pending JPH01179410A (en) 1988-01-07 1988-01-07 Method and apparatus for forming thin film by cvd

Country Status (1)

Country Link
JP (1) JPH01179410A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198033A (en) * 1988-02-03 1989-08-09 Toshiba Corp Formation of thin film
JPH02161724A (en) * 1988-12-14 1990-06-21 Sony Corp Low temperature film forming equipment
JPH03272111A (en) * 1990-03-22 1991-12-03 Mitsubishi Electric Corp Bobbin for surface package type transformer
JPH06342757A (en) * 1994-04-15 1994-12-13 Semiconductor Energy Lab Co Ltd Laser processing device
US5861337A (en) * 1991-05-28 1999-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
JP2009062615A (en) * 2007-09-04 2009-03-26 Tera Semicon Corp Source gas feeder
JP2011096986A (en) * 2009-11-02 2011-05-12 Tokyo Electron Ltd Film forming device, film forming method and storage medium

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198033A (en) * 1988-02-03 1989-08-09 Toshiba Corp Formation of thin film
JPH02161724A (en) * 1988-12-14 1990-06-21 Sony Corp Low temperature film forming equipment
JPH03272111A (en) * 1990-03-22 1991-12-03 Mitsubishi Electric Corp Bobbin for surface package type transformer
US6770143B2 (en) 1991-05-28 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5861337A (en) * 1991-05-28 1999-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6494162B1 (en) 1991-05-28 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US7368367B2 (en) 1991-09-21 2008-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6924212B2 (en) 1991-09-21 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
JPH06342757A (en) * 1994-04-15 1994-12-13 Semiconductor Energy Lab Co Ltd Laser processing device
JP2009062615A (en) * 2007-09-04 2009-03-26 Tera Semicon Corp Source gas feeder
JP2011096986A (en) * 2009-11-02 2011-05-12 Tokyo Electron Ltd Film forming device, film forming method and storage medium

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