JPH06204756A - Buffer circuit - Google Patents

Abstract

PURPOSE:To operate the circuit at a sufficient operating speed even at a low power supply voltage. CONSTITUTION:An output signal of an integrated circuit is given to the gate of a 1st transistor(TR) of N-channel MOS and the gate of a 2nd transistor (TR) of P-channel MOS. An output signal is outputted externally from the connecting point of the 1st and 2nd TRs in response to the operation of the 1st and 2nd TRs. Boosting circuits 12, 13 are used to increase the voltage change in a gate input signal of the MOS TRs Q1, Q2 further, then the TRs are driven sufficiently at a high speed even when the power supply voltage of the TRs is decreased.

Description

Detailed Description of the Invention

[0001]

[Table of Contents] The present invention will be described in the following order. Field of Industrial Application Conventional Technology (FIG. 9) Problem to be Solved by the Invention (FIG. 9) Means for Solving the Problem (FIGS. 1, 2 and 5) Action (FIGS. 1, 2 and 5) ) Example (FIGS. 1-8) Effect of the invention

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a buffer circuit, and more particularly to a CMOS (complementary metal oxide semiconducto).
It is suitable to be applied to a buffer circuit of r) configuration.

[0003]

2. Description of the Related Art Conventionally, there is a CMOS buffer circuit as shown in FIG. 9 which is inserted between an integrated circuit and an external circuit.

That is, in FIG. 9, reference numeral 1 denotes a buffer circuit as a whole. An output signal S1 on the integrated circuit side is inputted to the gates of an N-channel MOS type transistor Q1 and a P-channel MOS type transistor Q2, respectively, and the output signal S1 is inputted. Transistor Q1 depending on the voltage level of S1
And the transistor Q2 is turned on, by turning off operation have been made to charge from the power supply V _CC to the load capacitor C _L as an external circuit so as to charge and discharge.

Here, it is considered to use a power supply battery to drive the integrated circuit provided with the buffer circuit 1, and at this time, it is necessary to operate at a low power supply voltage of about 1 to 1.5 [V]. Becomes If general a large capacitance (C _L) are attached to the load of the buffer circuit 1 is large and this in order to drive at high speed, it is necessary to buffer circuit 1 has a sufficient driving capability.

[0006]

However, when the power supply voltage is lowered, the current that can be supplied by the transistor is also reduced, so that the driving capability of the buffer circuit 1 is also lowered and the operation speed is lowered.

As a method for solving this problem, a method of increasing the channel width W of the transistor can be considered, but the drain current I _{d of the} transistor is proportional to the square of the voltage. Since W is proportional, it is necessary to significantly increase the channel width.
However, in this case, the input capacitance of the buffer circuit 1 becomes large, which makes it difficult to drive the buffer circuit itself. Therefore, when operating with a low power supply voltage, there is an unavoidable problem that the speed of the buffer circuit 1 is greatly reduced.

The present invention has been made in consideration of the above points, and is intended to propose a buffer circuit which operates at a sufficient operating speed even at a low power supply voltage.

[0009]

In order to solve such a problem, according to the present invention, the output of the integrated circuit is provided to the gates of the first transistor Q ₁ of N-channel MOS type and the second transistor Q ₂ of P-channel MOS type. Input signal S1,
Transistor Q ₁ and the output signal S1 of the first and second response to the first and second operation of the transistor Q _1, Q _2, Q ₂
In the buffer circuit 10 which outputs to the outside from the connection end of the first transistor Q1, the first gate input signal S2 input to the gate of the first transistor Q ₁ based on the output signal S1 or the second transistor Q1 based on the output signal S1. _The booster circuits 11 and 12 are provided to increase the voltage change of at least one of the second gate input signal S3 input to the second gate more than the change of the output signal S1.

Further, in the present invention, the booster circuit 11 is
A delay circuit 18 for delaying the output signal S1, and an output signal S
A third transistor Q _A1 which operates on the basis of 1, the delay circuit 18 and the third and a capacitor C provided between the output terminal of the transistor Q _A1, delays the output of the third transistor Q _A1 circuit 18 Is raised to a predetermined level based on the rising edge of the output signal S11, and is input to the gate of the first transistor Q ₁ .

Further, in the present invention, the delay circuit 18 is
It is composed of the first and second inverters 16 and 17, and has a capacitance C.
Is an N-channel MOS type.

Further, in the present invention, the booster circuit 12 is
A delay circuit 24 for delaying the output signal S1, and an output signal S
A fourth transistor Q _B1 which operates on the basis of 1, and a provided between the output terminal of the delay circuit 24 and the fourth transistor Q _B1 capacitance C', the output of the fourth transistor Q _B1 delay circuit The output voltage of the second transistor Q ₂
Be sure to enter into the gate.

Further, in the present invention, the delay circuit 24 is
The first and second inverters 22 and 23 form a capacitor C '.
Is a P channel MOS type.

Further, in the present invention, an N channel MOS is provided.
The output signal S1 of the integrated circuit is input to the gates of the first transistor Q ₁ of the C-type and the second transistor Q ₂ of the P-channel MOS type, and the first and second transistors Q ₁ and Q ₂
In the buffer circuit 40 which outputs the output signal S1 from the connection terminals of the first and second transistors Q ₁ and Q ₂ to the outside according to the operation of the delay circuit 4 which delays the output signal S1.
5, a third transistor Q _A1 that operates based on the output signal S1, a fourth transistor Q _B1 that operates based on the output signal S1, and the output terminals of the delay circuit 45 and the third transistor Q _A1. The first capacitor C provided and the second capacitor C ′ provided between the delay circuit 45 and the output terminal of the fourth transistor Q _B1 are provided, and the output of the third transistor Q _A1 is provided to the delay circuit 45. Based on the rising of the output signal S45, the first transistor Q is raised to a predetermined level.
Input to the gate of ₁ and the fourth transistor Q _B1
Is lowered to a predetermined level based on the fall of the output signal S45 of the delay circuit 45, and is input to the gate of the second transistor Q ₂ .

Further, in the present invention, an N channel MOS is provided.
The output signal S1 of the integrated circuit is input to the gates of the first transistor Q ₁ of the C-type and the second transistor Q ₂ of the P-channel MOS type, and the first and second transistors Q ₁ and Q ₂
In the buffer circuit 40 which outputs the output signal S1 from the connection terminals of the first and second transistors Q ₁ and Q ₂ to the outside according to the operation of the first and second inverters 43 and 44, which delay the output signal S1. A third transistor Q _A1 that operates based on the output signal S1, a fourth transistor Q _B1 that operates based on the output signal S1, and a delay circuit 4
5 and a first capacitor C provided between the output ends of the third transistor Q _A1 and a second capacitor C ′ provided between the output ends of the delay circuit 45 and the fourth transistor Q _B1. ,
The output of the third transistor Q _A1 is fed to the inverters 43 and 44.
Is raised to a predetermined level based on the rising edge of the output signal S45, and is input to the gate of the first transistor Q ₁ , and the output of the fourth transistor Q _B1 is output based on the falling edge of the output signal S45 of the inverters 43 and 44. It is lowered to a predetermined level so that it is input to the gate of the second transistor Q ₂ .

[0016]

Operation: N-channel MOS type first transistor Q ₁
The high level side of the gate input signal S2 input to the gate of the
By lowering the low level side of the gate input signal S3 input to the gate of the OS type second transistor Q ₂ by the booster circuit 12, the first and second transistors Q ₁ and Q ₁ can be controlled by the low power supply voltage. Even when driving ₂ , the transistors Q ₁ and Q ₂ can be operated at a sufficiently high speed in practical use.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

In FIG. 1 in which parts corresponding to those in FIG. 9 are assigned the same reference numerals, the buffer circuit 10 inputs the output signal S1 output from the integrated circuit to the booster circuits 11 and 12.
In the booster circuit 11, the potential of the output signal S1 is 0 to V _CC [V].
The gate input signal S2, which varies from 0 to V _CC + V ₁ [V], is sent to the gate of the N-channel MOS type transistor Q ₁ .

On the other hand, the booster circuit 12 outputs the output signal S
When the potential of 1 changes from 0 to V _CC [V], -V _{2 to} V
A gate input signal S3 that changes with _CC [V] is sent to the gate of a P-channel MOS type transistor Q ₂ .

That is, the booster circuit 11 outputs the output signal S1 from the integrated circuit to the inverters 15 and N as shown in FIG.
It is received by the gate of the channel type transistor Q _A2 . The inverter 15 inverts the output signal S1 and then sends the inverted signal S10 to the delay circuit 18 including the inverters 16 and 17 and also to the N-channel transistor Q _A1 .

Therefore, as shown in FIG. 3, the output signal S1 from the integrated circuit (FIG. 3 (A)) is inverted in the inverter 15 and delayed by the delay time of the inverter 15. ) Output signal S
The inverted signal S10 is such that it rises at the time t2 delayed by the delay time of the inverter 15 from the time t1 of the fall of 1.

The inverted signal S10 is delayed by the delay time of the inverters 16 and 17 in the delay circuit 18, and rises at time t3 (see FIG. 3).
(C)) is supplied to one end of the capacitance C of the MOS structure.

Also, an N-channel MOS type transistor Q
_The transistor Q _A1 operates based on the potential of the inverted signal S10 supplied to the gate of _A1 , and the gate input signal S2 of the transistor Q ₁ changes according to the operating state of the transistor Q _A1 .

The transistor Q _A1 when the potential of the gate input signal S2 of the transistor Q ₁ (i.e., the gate and the source voltage of the transistor Q ₁₎ was greater summer than the potential of the inverted signal S10, the inverted signal S a gate input signal S2
It is separated from 10.

FIG. 4A shows the relationship between the drain current I _d of the MOS transistor and the gate voltage V _gs . When the gate voltage V _gs exceeds the threshold voltage V _TH as shown in FIG. The drain current I _d begins to flow.
Therefore, as shown in FIG. 3D, the voltage level of the gate input signal S2 is the difference between the threshold voltage V _THN of the N-channel transistor Q _A1 and the power supply voltage V _{CC at} the time t2 when the inverted signal S10 rises. (V _CC -V _THN )
Stand up to.

From this state, the delay signal S11 changes to the time point t3.
Rises at, the potential of the gate input signal S2 (FIG. 3 (D)) output across the capacitance C is also changed from (V _CC −V _THN ) to (CV _CC / (C + C) by the boot strap. _S )) only can be lifted.

Here, C _S is the stray capacitance of the node,
If C >> C _S , the lifted voltage is V _CC , and the potential of the gate input signal S2 is (2V _CC −V _THN ).
Therefore, this potential becomes larger than V _CC , so that a much higher gate voltage can be applied as compared with the conventional case where V _CC is applied to the gate of the transistor Q ₁ .

Further, at time t4 (FIG. 3), the potential of the output signal S1 returns to V _CC , and further delayed, the inverted signal S1.
0 and the delay signal S11 return to 0 [V]. At this time, it is delayed that the potential of the gate input signal S2 returns to 0 [V], and the inverted signal S10 and the gate input signal S2 are separated by the transistor Q _A1 , so that the inverted signal S10 and the delayed signal S11 are separated. Even if the potential returns to 0 [V], the potential of the gate input signal S2 returns only to (V _CC -V _THN ). Therefore, by providing Q _A2 , the potential of the gate input signal S2 is short-circuited to the ground when the output signal S1 returns to V _CC , whereby the gate input signal S2 can be returned to 0 [V] at time t4. .

On the other hand, the booster circuit 12 receives the output signal S1 from the integrated circuit at the gate of the inverter 21 and the P-channel transistor Q _B2 as shown in FIG.
The inverter 21 inverts the output signal S1 and then outputs the inverted signal S15 to the delay circuit 2 including the inverters 22 and 23.
P-channel transistor Q _B1
Send to.

Therefore, as shown in FIG. 6, the output signal S1 (FIG. 6 (A)) from the integrated circuit is inverted in the inverter 21 and delayed by the delay time of the inverter 21. ) Output signal S
The inverted signal S15 is such that it falls at the time t12 delayed by the delay time of the inverter 21 from the time t11 at which the signal 1 rises.

Further, the inverted signal S15 is delayed by the delay time of the inverters 22 and 23 in the delay circuit 24 and falls at the time t13 (see FIG. 6).
(C)) is supplied to one end of the capacitance C ′ of the MOS structure.

Further, a P-channel MOS type transistor Q
_The transistor Q _B1 is operated based on the potential of the inverted signal S15 supplied to the gate of _B1 , and the gate input signal S3 of the transistor Q ₂ changes according to the operating state of the transistor Q _B1 .

The transistor Q _B1 when the potential of the gate input signal S3 of the transistor Q ₂ (i.e. the voltage between the gate and source of the transistor Q ₂₎ has come smaller than the potential of the inverted signal S15, the inverted signal of the gate input signal S3 It is to be separated from S15.

Therefore, as shown in FIG. 6 (D), the voltage level of the gate input signal S3 is P channel type transistor Q _{B1 at the} time t12 when the inverted signal S15 falls.
_Threshold voltage V _THp .

From this state, the delay signal S16 changes to the time point t1.
When falls in 3, gate input signal is output across the capacitance C'S3 (FIG. 6 (D)) of the potential well further from V _THp accordingly _{(C'V CC / (C'+ C} S ') ) Only.

Here, C _S ′ is the stray capacitance of the node, but if C ′ >> C _S ′, the lowered voltage is V _CC , and the potential of the gate input signal S3 is (V _THp −V _CC )).
Becomes Therefore, this potential becomes smaller than 0 [V], so that a gate voltage much smaller than that in the conventional case where 0 [V] is applied to the gate of the transistor Q ₂ can be applied.

At time t14 (FIG. 6), the potential of the output signal S1 returns to 0 [V], and after a further delay, the inverted signal S15 and the delayed signal S16 return to V _CC . At this time, the potential of the gate input signal S3 is delayed to return to V _CC , and the inverted signal S15 and the gate input signal S3 are separated by the transistor Q _B1 .
Even if the potentials of 15 and the delay signal S16 return to V _CC , the potential of the gate input signal S3 _returns only to V _THp . Therefore, by providing the transistor Q _B2 , when the output signal S1 returns to 0 [V], the transistor Q _B2
The gate input signal S3 can be returned to V _cc at time t14 by turning on.

In the above configuration, as shown in FIG. 4, the transistors Q ₁ Q ₂ of the buffer circuit 10 are generally I _d ∝.
The relationship of (V _gs −V _TH ) ² holds, and when the power supply voltage becomes lower, the drain current I _d sharply decreases due to the square characteristic. However, if only V _gs is increased here, for example, V _gs −V
_{When TH} is doubled, _Id is quadrupled, and as shown in FIGS. 4B and 4C, the time τ for withdrawing the charge from the capacitor is 1.
It becomes / 4. Therefore, a high-speed operation can be performed even with a low voltage power supply.

Also in the transistor Q ₂ , similarly, by lowering the voltage applied to the gate to 0 [V] or less, high-speed operation can be performed in the low-voltage power supply.

According to the above structure, the voltage applied to the gate of the transistor Q ₁ is made higher than the power supply voltage V _CC by using the booster circuit 11, and the voltage applied to the gate of the transistor Q ₂ is 0 [V]. by smaller than, it is possible to change the voltage applied to the gate of the transistor Q ₁ and Q ₂ to an extent that can sufficiently drive the transistors Q ₁ and Q _2, thereby the power supply voltage V _CC
Even if is made small, the transistors Q ₁ and Q ₂ can be driven at a sufficiently high speed in practical use.

In the above embodiment, the booster circuit 1
Although the case where 1 and 12 are individually provided has been described, the present invention is not limited to this, and the inverters 15, 16, 17 and 21, 22, 23 of the booster circuits 11 and 12 may be shared.

That is, in FIG. 7 in which parts corresponding to those in FIGS. 2 and 5 are designated by the same reference numerals, the booster circuit 41 of the buffer circuit 40 uses the inverter 42 to replace the inverter 15 of FIG. 2 and the inverter 21 of FIG. 2 and shared by inverters 43 and 44.
7 and the inverters 22 and 23 of FIG. 5 are shared.

The inverters 43 and 44 form a delay circuit 45 in the same manner as the delay circuits 18 and 24 of FIGS. 2 and 3, and the inverted signal S42 (S) output from the inverter 42 is output.
10, S15) (FIG. 8 (B)) to the inverters 43 and 4
Delay signal S45 (S1
1, S16) (FIG. 8C) is supplied to the connection ends of the capacitors C and C ′.

Transistor Q _A1 operates in the same manner as described above with reference to FIG. 2 at the rising time t of inverted signal S42.
22 (FIG. 8), and accordingly, the gate input signal S2 (FIG. 8D) of the transistor Q ₁ becomes (V _CC −
Stand up to V _THN ). After that, at the time t23 when the delay signal S45 rises after being delayed by the delay time in the delay circuit 45, the voltage of the gate input signal S2 becomes (V _CC −
It is further lifted by CV _CC / (C + C _S ) from V _THN ).

On the other hand, the transistor Q _B1 operates at the falling time t25 (FIG. 8) of the inverted signal S42 in the same manner as described above with reference to FIG. 5, and accordingly the gate input signal S3 of the transistor Q ₂ is generated. (Fig. 8
(E)) falls to V _THp . After this, the delay circuit 45
The voltage of the gate input signal S2 is further lowered from V _THp by C′V _CC / (C ′ + C _S ′) at the time point t26 when the delay signal S45 falls after being delayed by the delay time in.

[0046] Thus, in buffer circuit 40, the transistors Q ₁ and Q ₂ of the gate input signals S2 and S3
By sharing the inverters 42, 43 and 44 for boosting the voltage in the transistors Q ₁ and Q ₂ , the configuration of the buffer circuit 40 can be further simplified.

In the above embodiment, the booster circuit 1
The case where the voltage changes of the gate input signals S2 and S3 of the transistors Q ₁ and Q ₂ are increased by using 1 and 12 has been described, but the present invention is not limited to this, and only one of the booster circuits 11 and 12 is used. Causes transistor Q
Either ₁ or Q ₂ may be driven at high speed.

[0048]

As described above, according to the present invention, the voltage change of the gate input signal of the MOS transistor is further increased by using the booster circuit, so that even if the power supply voltage of the transistor is reduced, It can be driven at a sufficiently high speed.

[Brief description of drawings]

FIG. 1 is a connection diagram showing an embodiment of a buffer circuit according to the present invention.

FIG. 2 is a connection diagram showing a configuration of a booster circuit.

FIG. 3 is a signal waveform diagram for explaining the operation of the booster circuit.

FIG. 4 is a characteristic curve diagram showing characteristics of a MOS transistor.

FIG. 5 is a connection diagram showing a configuration of a booster circuit.

FIG. 6 is a signal waveform diagram for explaining the operation of the booster circuit.

FIG. 7 is a connection diagram showing a buffer circuit according to another embodiment.

FIG. 8 is a signal waveform diagram for explaining the operation of another embodiment.

FIG. 9 is a connection diagram showing a conventional buffer circuit.

[Explanation of symbols]

10, 40 ... Buffer circuit, 11, 12 ... Booster circuit, 15, 16, 17, 21, 22, 23, 42, 4
3,44 ...... inverter, 18,24,45 ...... delay _{circuit, Q 1, Q 2, Q} A1, Q A2, Q B1, Q B2 ...... transistor.

Continuation of the front page (51) Int.Cl. ⁵ Identification number Office reference number FI Technical indication location H03K 19/0175 19/094 8321-5J H03K 19/094 C

Claims (7)

[Claims] 1. An output signal of an integrated circuit is input to the gates of an N-channel MOS type first transistor and a P-channel MOS type second transistor, and the output signal of the integrated circuit is input according to the operation of the first and second transistors. In a buffer circuit for outputting an output signal to the outside from a connection end of the first and second transistors, a first gate input signal or the output signal input to the gate of the first transistor based on the output signal. A buffer circuit for increasing the voltage change of at least one of the second gate input signals input to the gate of the second transistor more than the change of the output signal. 2. The booster circuit is provided between a delay circuit that delays the output signal, a third transistor that operates based on the output signal, and an output terminal of the delay circuit and the third transistor. The output of the third transistor is raised to a predetermined level based on the rising edge of the output signal of the delay circuit, and the output of the third transistor is input to the gate of the first transistor. The buffer circuit described in 1. 3. The buffer circuit according to claim 2, wherein the delay circuit is composed of first and second inverters, and the capacitor is of an N-channel MOS type. 4. The booster circuit is provided between a delay circuit that delays the output signal, a fourth transistor that operates based on the output signal, and an output terminal of the delay circuit and the fourth transistor. The output of the fourth transistor is lowered to a predetermined level based on the fall of the output signal of the delay circuit, and is input to the gate of the second transistor. The buffer circuit according to Item 1. 5. The buffer circuit according to claim 4, wherein the delay circuit is composed of first and second inverters, and the capacitor is of a P channel MOS type. 6. An output signal of an integrated circuit is input to the gates of an N-channel MOS type first transistor and a P-channel MOS type second transistor, and the output signal of the integrated circuit is input according to the operation of the first and second transistors. A buffer circuit for outputting an output signal to the outside from a connection end of the first and second transistors, a delay circuit for delaying the output signal, a third transistor operating based on the output signal, and the output signal And a first capacitor provided between the delay circuit and the output terminal of the third transistor, and a fourth transistor that operates based on the above, and provided between the delay circuit and the output terminal of the fourth transistor. A second capacitor, the output of the third transistor is raised to a predetermined level based on the rising edge of the output signal of the delay circuit, In addition to inputting to the gate of the first transistor, the output of the fourth transistor is lowered to a predetermined level based on the fall of the output signal of the delay circuit, and input to the gate of the second transistor. Characteristic buffer circuit. 7. An output signal of the integrated circuit is input to the gates of an N-channel MOS type first transistor and a P-channel MOS type second transistor, and the output signal of the integrated circuit is input according to the operation of the first and second transistors. In a buffer circuit for outputting an output signal to the outside from a connection end of the first and second transistors, first and second inverters that delay the output signal, and a third transistor that operates based on the output signal. A fourth transistor that operates based on the output signal; a first capacitor provided between output terminals of the delay circuit and the third transistor; and outputs of the delay circuit and the fourth transistor. A second capacitor provided between the terminals, and the output of the third transistor is set to a predetermined level based on the rising edge of the output signal of the inverter. So that it is input to the gate of the first transistor, the output of the fourth transistor is lowered to a predetermined level based on the fall of the output signal of the inverter, and is input to the gate of the second transistor. The buffer circuit is characterized by