JPH06201807A - Magnetic sensor device - Google Patents
Magnetic sensor deviceInfo
- Publication number
- JPH06201807A JPH06201807A JP5002205A JP220593A JPH06201807A JP H06201807 A JPH06201807 A JP H06201807A JP 5002205 A JP5002205 A JP 5002205A JP 220593 A JP220593 A JP 220593A JP H06201807 A JPH06201807 A JP H06201807A
- Authority
- JP
- Japan
- Prior art keywords
- sensor device
- magnetic sensor
- constant voltage
- voltage regulator
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は磁気センサ装置に関
し、さらに詳しくは、温度によるＭＲ素子の抵抗値変化
の影響をキャンセルできる磁気センサ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor device, and more particularly to a magnetic sensor device capable of canceling the influence of a change in the resistance value of an MR element due to temperature.
【０００２】[0002]
【従来の技術】図５は、従来の磁気センサ装置の一例の
要部構成図である。この磁気センサ装置５１では、ソケ
ットＳ内の磁気カード挿入スリット付近に、ＭＲ素子Ｍ
ａ，Ｍｂが磁気カードＡの移動方向と平行に内設されて
いる。ＭＲ素子Ｍａ，Ｍｂは直列接続され、その直列回
路は直流電源Ｖｃｃ−Ｇｎｄ間に接続されている。そし
て、ＭＲ素子Ｍａ，Ｍｂの接続点の信号電圧Ｖｐを取り
出し、その信号電圧Ｖｐに基づいて検出信号Ｖｏを生成
する。2. Description of the Related Art FIG. 5 is a schematic view of a main part of an example of a conventional magnetic sensor device. In this magnetic sensor device 51, the MR element M is provided near the magnetic card insertion slit in the socket S.
a and Mb are provided in parallel with the moving direction of the magnetic card A. The MR elements Ma and Mb are connected in series, and the series circuit is connected between the DC power supply Vcc and Gnd. Then, the signal voltage Vp at the connection point of the MR elements Ma and Mb is taken out, and the detection signal Vo is generated based on the signal voltage Vp.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の磁気センサ
装置５１では、温度によるＭＲ素子Ｍａ，Ｍｂの抵抗値
変化の影響をキャンセルするために、温度特性の揃った
２つのＭＲ素子Ｍａ，Ｍｂを選別して使用しなければな
らず、歩留りが悪い問題点がある。そこで、この発明の
目的は、温度によるＭＲ素子の抵抗値変化の影響をキャ
ンセルでき，歩留りを向上することが出来る磁気センサ
装置を提供することにある。In the above-mentioned conventional magnetic sensor device 51, in order to cancel the influence of the change in resistance value of the MR elements Ma and Mb due to temperature, two MR elements Ma and Mb having uniform temperature characteristics are provided. There is a problem that the yield is poor because it must be selected and used. Therefore, an object of the present invention is to provide a magnetic sensor device capable of canceling the influence of the change in the resistance value of the MR element due to temperature and improving the yield.
【０００４】[0004]
【課題を解決するための手段】この発明の磁気センサ装
置は、直流電源に定電圧レギュレータ回路を介して１個
のＭＲ素子を負荷として接続し、そのＭＲ素子の端子電
圧を検出信号として取り出し、前記定電圧レギュレータ
回路は、前記ＭＲ素子の温度による抵抗値変化よりも周
波数応答性が良く，前記ＭＲ素子の検出信号よりも周波
数応答性が悪いことを構成上の特徴とするものである。According to the magnetic sensor device of the present invention, one MR element is connected as a load to a DC power source via a constant voltage regulator circuit, and the terminal voltage of the MR element is taken out as a detection signal. The constant voltage regulator circuit is characterized in that it has a better frequency response than a change in resistance of the MR element due to temperature and a worse frequency response than a detection signal of the MR element.
【０００５】[0005]
【作用】この発明の磁気センサ装置では、ＭＲ素子の抵
抗値が温度により変化しても、その変化より定電圧レギ
ュレータ回路の周波数応答性が良いので、ＭＲ素子の端
子電圧は一定に保たれ、検知出力に影響しない。一方、
ＭＲ素子の抵抗値が被検知物により変化すると、その変
化より定電圧レギュレータ回路の周波数応答性が悪いの
で、ＭＲ素子の端子電圧は一定に保たれず、検知出力と
して現れる。すなわち、データの読み取りに支障を与え
ずに、温度ドリフトをキャンセルできる。In the magnetic sensor device of the present invention, even if the resistance value of the MR element changes with temperature, the frequency response of the constant voltage regulator circuit is better than the change, so that the terminal voltage of the MR element is kept constant. Does not affect the detection output. on the other hand,
When the resistance value of the MR element changes depending on the object to be detected, the frequency response of the constant voltage regulator circuit is worse than the change, and therefore the terminal voltage of the MR element does not remain constant and appears as a detection output. That is, the temperature drift can be canceled without hindering the reading of data.
【０００６】[0006]
【実施例】以下、図に示す実施例によりこの発明をさら
に詳しく説明する。なお、これによりこの発明が限定さ
れるものではない。The present invention will be described in more detail with reference to the embodiments shown in the drawings. The present invention is not limited to this.
【０００７】−第１実施例− 図１は、この発明の磁気センサ装置の一実施例を示す回
路図である。この磁気センサ装置１は、直流電源Ｖｃｃ
に定電圧レギュレータ回路２を介して１個のＭＲ素子Ｍ
１を負荷として接続し、そのＭＲ素子Ｍ１の端子電圧を
検出信号Ｖｏとして取り出している。前記ＭＲ素子Ｍ１
は、ソケットＳ内の磁気カード挿入スリット付近に内設
されている。First Embodiment FIG. 1 is a circuit diagram showing an embodiment of the magnetic sensor device of the present invention. This magnetic sensor device 1 has a DC power supply Vcc.
One MR element M via the constant voltage regulator circuit 2
1 is connected as a load, and the terminal voltage of the MR element M1 is taken out as a detection signal Vo. The MR element M1
Is provided near the magnetic card insertion slit in the socket S.
【０００８】前記定電圧レギュレータ回路２は、直流電
圧Ｖｃｃからの負荷電流をトランジスタＴｒのコレクタ
−エミッタを通して前記ＭＲ素子Ｍ１に供給する。トラ
ンジスタＴｒのエミッタ−Ｇｎｄ間には、抵抗Ｒ１とコ
ンデンサＣ１とが直列接続されている。オペアンプＯＰ
は、抵抗Ｒ１とコンデンサＣ１の接続点の電圧が基準電
圧Ｖｒｅｆと等しくなるように負荷電流を制御する。ま
た、前記定電圧レギュレータ回路２は、前記ＭＲ素子Ｍ
１の温度による抵抗値変化よりも周波数応答性が良く，
磁気カードＡが挿入されるときのＭＲ素子Ｍ１の抵抗値
変化よりも周波数応答性が悪くなるように、抵抗やコン
デンサの値を調整されている。The constant voltage regulator circuit 2 supplies the load current from the DC voltage Vcc to the MR element M1 through the collector-emitter of the transistor Tr. A resistor R1 and a capacitor C1 are connected in series between the emitter of the transistor Tr and Gnd. Operational amplifier OP
Controls the load current so that the voltage at the connection point of the resistor R1 and the capacitor C1 becomes equal to the reference voltage Vref. Further, the constant voltage regulator circuit 2 includes the MR element M
The frequency response is better than the resistance change with temperature of 1,
The values of the resistors and capacitors are adjusted so that the frequency response becomes worse than the change in the resistance value of the MR element M1 when the magnetic card A is inserted.
【０００９】次に、この磁気センサ装置１の動作を説明
する。周囲の温度変化に伴って、図２の（ａ）に示すよ
うに、ＭＲ素子Ｍ１の抵抗値は変化する。しかし、この
変化よりも定電圧レギュレータ回路２の応答が速いの
で、図２の（ｂ）に示すように、検出信号Ｖｏは一定電
圧Ｖｋに維持され、変化しない。つまり、定電圧レギュ
レータ回路２は、温度によるＭＲ素子Ｍ１の抵抗値変化
の影響をキャンセルできる。磁気カードＡが挿入された
ときは、図３の（ａ）に示すように、ＭＲ素子Ｍ１の抵
抗値が変化する。ところが、この変化よりも定電圧レギ
ュレータ回路２の応答が遅いので、図３の（ｂ）に示す
ように、検出信号Ｖｏは変化する。つまり、定電圧レギ
ュレータ回路２は、磁気カードＡからのデータの読取に
は支障を与えない。Next, the operation of the magnetic sensor device 1 will be described. As shown in FIG. 2A, the resistance value of the MR element M1 changes as the ambient temperature changes. However, since the response of the constant voltage regulator circuit 2 is faster than this change, the detection signal Vo is maintained at the constant voltage Vk and does not change, as shown in FIG. That is, the constant voltage regulator circuit 2 can cancel the influence of the change in the resistance value of the MR element M1 due to the temperature. When the magnetic card A is inserted, the resistance value of the MR element M1 changes as shown in FIG. However, since the response of the constant voltage regulator circuit 2 is slower than this change, the detection signal Vo changes as shown in FIG. 3B. That is, the constant voltage regulator circuit 2 does not hinder the reading of data from the magnetic card A.
【００１０】従って、上記磁気センサ装置１では、ＭＲ
素子Ｍ１の温度特性の多少のバラツキが許容されるた
め、歩留りを向上できる。Therefore, in the above magnetic sensor device 1, the MR
Since a slight variation in the temperature characteristics of the element M1 is allowed, the yield can be improved.
【００１１】−第２実施例− 図４は、この発明の第２実施例による磁気センサ装置２
１の図１相当図である。この磁気センサ装置２１は、上
記第１実施例の磁気センサ装置１とほぼ同じ構成である
が、オペアンプＯＰを用いた定電圧レギュレータ回路２
に代えて、シャントレギュレータＳを用いた定電圧レギ
ュレータ回路２２を用いた点が異なっている。この第２
実施例の動作および効果は、上記第１実施例と同じであ
る。Second Embodiment FIG. 4 shows a magnetic sensor device 2 according to a second embodiment of the present invention.
1 is a view corresponding to FIG. This magnetic sensor device 21 has almost the same configuration as the magnetic sensor device 1 of the first embodiment, but a constant voltage regulator circuit 2 using an operational amplifier OP.
Instead, a constant voltage regulator circuit 22 using a shunt regulator S is used. This second
The operation and effect of the embodiment are the same as those of the first embodiment.
【００１２】[0012]
【発明の効果】この発明の磁気センサ装置によれば、デ
ータの読み取りには支障を与えずに、温度ドリフトをキ
ャンセルできる。従って、ＭＲ素子の温度特性の多少の
バラツキが許容されるため、歩留りを向上できる。According to the magnetic sensor device of the present invention, temperature drift can be canceled without hindering the reading of data. Therefore, a slight variation in the temperature characteristics of the MR element is allowed, and the yield can be improved.
【図１】この発明の一実施例を示す磁気センサ装置を示
す回路図である。FIG. 1 is a circuit diagram showing a magnetic sensor device according to an embodiment of the present invention.
【図２】図１の磁気センサ装置の温度変化に対する動作
を示す波形図である。FIG. 2 is a waveform diagram showing an operation of the magnetic sensor device of FIG. 1 with respect to temperature change.
【図３】図１の磁気センサ装置のデータに対する動作を
示す波形図である。FIG. 3 is a waveform diagram showing an operation for data of the magnetic sensor device of FIG.
【図４】この発明の第２実施例による磁気センサ装置の
回路図である。FIG. 4 is a circuit diagram of a magnetic sensor device according to a second embodiment of the present invention.
【図５】従来の磁気センサ装置の一例を示す要部構成図
である。FIG. 5 is a main part configuration diagram showing an example of a conventional magnetic sensor device.
１，２１，５１ 磁気センサ装置 Ｍ１，Ｍ２，Ｍａ，Ｍｂ ＭＲ素子 ２，２２ 定電圧レギュレータ Ｔｒ トランジスタ ＯＰ オペアンプ Ｒ１，Ｒａ 抵抗 Ｃ１，Ｃ２ コンデンサ Ｓ シャントレギュレータ Ａ 磁気カード 1, 21, 51 Magnetic sensor device M1, M2, Ma, Mb MR element 2, 22 Constant voltage regulator Tr transistor OP operational amplifier R1, Ra resistor C1, C2 capacitor S shunt regulator A magnetic card
Claims (1)
して１個のＭＲ素子を負荷として接続し、そのＭＲ素子
の端子電圧を検出信号として取り出し、前記定電圧レギ
ュレータ回路は、前記ＭＲ素子の温度による抵抗値変化
よりも周波数応答性が良く，前記ＭＲ素子の検出信号よ
りも周波数応答性が悪いことを特徴とする磁気センサ装
置。1. A direct-current power supply is connected to one MR element as a load via a constant voltage regulator circuit, and the terminal voltage of the MR element is taken out as a detection signal. A magnetic sensor device characterized by having a better frequency response than the change in resistance value due to, and being worse than the detection signal of the MR element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00220593A JP3151986B2 (en) | 1993-01-11 | 1993-01-11 | Magnetic sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00220593A JP3151986B2 (en) | 1993-01-11 | 1993-01-11 | Magnetic sensor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06201807A true JPH06201807A (en) | 1994-07-22 |
| JP3151986B2 JP3151986B2 (en) | 2001-04-03 |
Family
ID=11522859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00220593A Expired - Fee Related JP3151986B2 (en) | 1993-01-11 | 1993-01-11 | Magnetic sensor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3151986B2 (en) |
-
1993
- 1993-01-11 JP JP00220593A patent/JP3151986B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3151986B2 (en) | 2001-04-03 |
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