JPH06187828A - High frequency dielectric ceramic composition - Google Patents

High frequency dielectric ceramic composition

Info

Publication number
JPH06187828A
JPH06187828A JP5101338A JP10133893A JPH06187828A JP H06187828 A JPH06187828 A JP H06187828A JP 5101338 A JP5101338 A JP 5101338A JP 10133893 A JP10133893 A JP 10133893A JP H06187828 A JPH06187828 A JP H06187828A
Authority
JP
Japan
Prior art keywords
value
high frequency
dielectric
mgo
dielectric ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5101338A
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Japanese (ja)
Other versions
JP2842756B2 (en
Inventor
Shigesato Koyasu
茂吏 子安
Seiichiro Hirahara
誠一郎 平原
Nobuyoshi Fujikawa
信儀 藤川
Gentaro Kaji
源太郎 梶
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Kyocera Corp
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Kyocera Corp
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Filing date
Publication date
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Publication of JPH06187828A publication Critical patent/JPH06187828A/en
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Publication of JP2842756B2 publication Critical patent/JP2842756B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To obtain a high dielectric constant and a Q value in a high frequency area and to allow the control of a Ta quantity and the free control of temperature property in a certain area by mixing BaO, MgO, WO3 and Ta2O5 at a specified ratio. CONSTITUTION:High frequency dielectric ceramic composition containing BaO, MgO, WO3 and Ta2O5 is formed of metal composite oxide as shown by a composition formula of xBaO.yMgO.zWO3.wTaO5/2 by mole ratio: x, y, z and w satisfy the formula. By changing these values within the composition formula, the temperature property of resonance frequency can be freely controlled in a certain area while loweres or sintering becomes difficult.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マイクロ波,ミリ波等
の高周波領域において高い誘電率及び高いQ値を有する
新規な高周波用誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel high frequency dielectric ceramic composition having a high dielectric constant and a high Q value in a high frequency region such as a microwave and a millimeter wave.

【0002】[0002]

【従来技術】マイクロ波やミリ波等の高周波領域におい
て、誘電体磁器は誘電体共振器やMIC用誘電体基板等
に広く利用されている。
2. Description of the Related Art Dielectric ceramics are widely used for dielectric resonators, dielectric substrates for MICs, etc. in a high frequency range such as microwaves and millimeter waves.

【0003】従来より、この種の誘電体磁器としては、
例えばZrO2 −SnO2 −TiO2 系材料、BaO−
TiO2 材料、(Ba,Sr)(Zr,Ti)O3 系材
料、Ba(Zn,Ta)O3 系材料等が知られている。
Conventionally, as a dielectric ceramic of this type,
For example, ZrO 2 —SnO 2 —TiO 2 -based material, BaO—
TiO 2 materials, (Ba, Sr) (Zr, Ti) O 3 based materials, Ba (Zn, Ta) O 3 based materials and the like are known.

【0004】上記材料は、各種の改良により周波数10
GHzにおいて誘電率20〜40、Q値が3000以
上、さらに共振周波数の温度係数(τf)が0ppm/
℃付近の優れた特性が達成されている。
The above-mentioned material has a frequency of 10 due to various improvements.
The dielectric constant is 20 to 40, the Q value is 3000 or more at GHz, and the temperature coefficient (τf) of the resonance frequency is 0 ppm /
Excellent properties near ℃ have been achieved.

【0005】[0005]

【発明が解決しようとする問題点】最近では使用する周
波数がより高くなる傾向にあるとともに誘電体材料に対
してさらに優れた誘電特性、特にQ値の向上が要求され
つつある。ところが、前述した従来の誘電体材料では、
10GHzでは特にQ値を高めるにしても6000程度
が限界であり、これらの要求に対して充分に応えること
ができないのが現状である。また、従来の誘電体材料で
は共振周波数の温度係数(τf)を制御することができ
なかった。
Recently, the frequency to be used tends to be higher and the dielectric material is required to have more excellent dielectric properties, especially the Q value. However, in the above-mentioned conventional dielectric material,
At 10 GHz, even if the Q value is particularly increased, the limit is about 6000, and it is the current situation that these requirements cannot be sufficiently satisfied. Further, the conventional dielectric material cannot control the temperature coefficient (τf) of the resonance frequency.

【0006】本発明はこのような要求に応えることがで
き、高周波領域において高い誘電率および高いQ値を有
するとともに共振周波数の温度特性の制御が可能な誘電
体磁器組成物を提供することを目的とするものである。
An object of the present invention is to provide a dielectric porcelain composition which can meet such requirements, has a high dielectric constant and a high Q value in a high frequency range, and can control the temperature characteristic of the resonance frequency. It is what

【0007】[0007]

【問題点を解決するための手段】本発明者等は、上記問
題点に対して検討を加えた結果、BaO、MgO、WO
3 、Ta2 5 を含有し、これらを特定の組成に調製す
ることにより優れた誘電特性が得られることを見出し
た。
[Means for Solving the Problems] The inventors of the present invention have studied the above problems, and as a result, BaO, MgO, WO
It has been found that excellent dielectric properties can be obtained by containing 3 and Ta 2 O 5 and adjusting these to a specific composition.

【0008】即ち、本発明の誘電体磁器組成物は金属複
合酸化物からなり、BaO,MgO,WO3 及びTa2
5 より構成されるものである。そして、本発明は、モ
ル比による組成式をxBaO・yMgO・zWO3 ・w
TaO5/2 と表した時、前記x、y、z、wが
That is, the dielectric porcelain composition of the present invention is composed of a metal composite oxide and is composed of BaO, MgO, WO 3 and Ta 2.
It is composed of O 5 . The present invention provides a composition formula by molar ratio xBaO · yMgO · zWO 3 · w
When expressed as TaO 5/2 , the x, y, z and w are

【0009】[0009]

【数2】 [Equation 2]

【0010】を満足する組成範囲に設定されるものであ
る。
The composition range is set to satisfy the above condition.

【0011】これらの比率を上記の範囲に設定したの
は、BaO量(x)が0.40より少ないとQ値が低下
し焼結が困難となり、0.55より多いとQ値が低下す
るからである。また、MgO量(y)が0.10より少
ないと焼結性が困難となり、あるいはQ値の低下を招
き、0.40より多いとQ値が低下する傾向があるから
である。さらに、WO3 量(z)が0.30よりも多い
とQ値が低下するからである。また、TaO5/2
(w)が0.40以上となるとQ値が低下するからであ
る。
These ratios are set in the above range because the Q value decreases when the BaO amount (x) is less than 0.40 and the sintering becomes difficult, and the Q value decreases when it exceeds 0.55. Because. Further, if the MgO amount (y) is less than 0.10, the sinterability will be difficult or the Q value will be lowered, and if it is more than 0.40, the Q value will tend to be lowered. Furthermore, if the WO 3 amount (z) is more than 0.30, the Q value will decrease. Also, the Q value decreases when the TaO 5/2 amount (w) becomes 0.40 or more.

【0012】そして、本発明の誘電体磁器組成物では、
Ta2 5 ,BaO,MgO,WO3 のモル比を前記範
囲内で変化させることにより、高いQ値を維持したま
ま、共振周波数の温度特性を一定領域で自由に制御する
ことができる。
And, in the dielectric ceramic composition of the present invention,
By changing the molar ratio of Ta 2 O 5 , BaO, MgO, and WO 3 within the above range, it is possible to freely control the temperature characteristic of the resonance frequency in a fixed region while maintaining a high Q value.

【0013】さらに、0.20≦z+w≦0.40とし
たのは、z+wが0.2より少ない場合や0.4より多
い場合には、Q値が低下、或いは焼結不良となるからで
ある。
Further, the reason for setting 0.20≤z + w≤0.40 is that when z + w is less than 0.2 or more than 0.4, the Q value is lowered or sintering is defective. is there.

【0014】また、In addition,

【0015】[0015]

【数3】 [Equation 3]

【0016】としたのは、値が0.17より少ない場合
や0.94以上の場合には、Q値が低下したり、焼結不
良となるからである。
The reason for this is that if the value is less than 0.17 or is 0.94 or more, the Q value is lowered and sintering becomes defective.

【0017】また、この組成1モル部に対してY,H
f,Zr,Mn,Sn,Ti,Ca,La,Ce,N
d,Pr,Smの少なくとも一種の酸化物を0.3モル
部以下の範囲で添加含有させることにより、焼結性を改
善したり、誘電特性を制御したりすることができる。
Further, Y, H is added to 1 mol part of this composition.
f, Zr, Mn, Sn, Ti, Ca, La, Ce, N
By adding at least one oxide of d, Pr, and Sm in the range of 0.3 parts by mole or less, the sinterability can be improved and the dielectric characteristics can be controlled.

【0018】本発明に基づき磁器を作成する方法として
は、例えばBa,Mg,W, Taの酸化物あるいは焼成
により酸化物を生成する炭酸塩、硝酸塩等の金属塩を原
料として用い、これらを前述した範囲になるように秤量
した後、充分に混合する。その後、混合物を900〜1
300℃で仮焼処理し、粉砕する。そして、この仮焼粉
末をプレス成形やドクターブレード法等の成形方法によ
り所定の形状に成形する。
As a method for producing a porcelain based on the present invention, for example, an oxide of Ba, Mg, W, Ta or a metal salt such as a carbonate or a nitrate which produces an oxide by firing is used as a raw material. Weigh it so that it falls within the specified range, and then mix thoroughly. Then, the mixture is 900-1
It is calcined at 300 ° C and crushed. Then, this calcined powder is molded into a predetermined shape by a molding method such as press molding or a doctor blade method.

【0019】次に成形体を大気中等の酸化性雰囲気中で
1300〜1600℃で焼成することにより誘電体磁器
を得ることができる。
Next, the molded body is fired at 1300 to 1600 ° C. in an oxidizing atmosphere such as the air to obtain a dielectric ceramic.

【0020】[0020]

【作用】本発明の誘電体磁器組成物では、BaO,Mg
O,WO3 ,Ta2 5 のモル比を変化させることによ
り、高いQ値を維持したまま、共振周波数の温度特性を
一定領域で自由に制御することができる。即ち、Ta量
を増加することにより、温度係数τfが上昇する傾向に
あり、温度係数(τf)の制御が可能となる。以下、本
発明を次の実施例で説明する。
In the dielectric ceramic composition of the present invention, BaO, Mg
By changing the molar ratio of O, WO 3 , and Ta 2 O 5 , it is possible to freely control the temperature characteristic of the resonance frequency in a constant region while maintaining a high Q value. That is, as the Ta amount increases, the temperature coefficient τf tends to increase, and the temperature coefficient (τf) can be controlled. Hereinafter, the present invention will be described in the following examples.

【0021】[0021]

【実施例】【Example】

実施例1 原料として純度99%以上のBaCO3 ,MgCO3
WO3 およびTa2 5 の粉末を用いて、これらを表1
に示す割合に秤量し、これをゴムで内張りしたボールミ
ルに水と共に入れ、8時間湿式混合した。次いで、この
混合物を脱水、乾燥した後、1000℃で2時間仮焼
し、当該仮焼物をボールミルに水、有機バインダーを入
れ8時間湿式粉砕した。
Example 1 As raw materials, BaCO 3 , MgCO 3 having a purity of 99% or more,
Using WO 3 and Ta 2 O 5 powders, these are shown in Table 1.
Were weighed in the ratio shown in Table 1 and put into a ball mill lined with rubber together with water, and wet mixed for 8 hours. Next, this mixture was dehydrated and dried, and then calcined at 1000 ° C. for 2 hours, and the calcined material was wet-ground for 8 hours by adding water and an organic binder to a ball mill.

【0022】その後、この粉砕物を乾燥した後、50番
メッシュの網を通して造粒し、得られた粉末を3000
kg/cm2 の圧力で10mmφ×5mmtの寸法から
なる円柱に成形した。更に、この円柱を1400〜16
00℃×6時間の条件で焼成して磁器試料を得た。
Thereafter, the pulverized product was dried and then granulated through a mesh of No. 50 mesh, and the obtained powder was 3000
It was molded into a cylinder having a size of 10 mmφ × 5 mmt at a pressure of kg / cm 2 . Furthermore, this cylinder is 1400-16
Firing was performed under the condition of 00 ° C. × 6 hours to obtain a porcelain sample.

【0023】かくして得られた磁器試料について、周波
数10GHzにおける比誘電率(εr),Q値を誘電体
共振器法にて測定し、また25℃から85℃までの温度
範囲における共振周波数の温度変化率から共振周波数の
温度係数(τf)を計算した。それらの結果を表1に示
した。
The relative permittivity (εr) and the Q value of the thus obtained porcelain sample at a frequency of 10 GHz were measured by the dielectric resonator method, and the temperature change of the resonance frequency in the temperature range from 25 ° C. to 85 ° C. The temperature coefficient (τf) of the resonance frequency was calculated from the ratio. The results are shown in Table 1.

【0024】[0024]

【表1】 [Table 1]

【0025】表1によれば、BaO、MgO、WO3
Ta2 5 の配合組成が本発明の範囲を逸脱する試料N
o.4,8,11,12,18,22,25,26,2
7,28はQ値が1200以下あるいは焼結不良を生じ
た。これに対して、本発明の試料は比誘電率10以上、
Q値3000以上が達成され、Ta2 5 の配合量を変
化させると共振周波数の温度特性が−28〜13ppm
/℃まで変動していることが判る。
According to Table 1, BaO, MgO, WO 3 ,
Sample N in which the composition of Ta 2 O 5 deviates from the scope of the present invention
o. 4,8,11,12,18,22,25,26,2
In Nos. 7 and 28, the Q value was 1200 or less, or sintering failure occurred. On the other hand, the sample of the present invention has a relative dielectric constant of 10 or more,
A Q value of 3000 or more was achieved, and when the compounding amount of Ta 2 O 5 was changed, the temperature characteristic of the resonance frequency was -28 to 13 ppm.
It is understood that the temperature fluctuates up to / ° C.

【0026】実施例2 原料として純度99%以上のBaCO3 ,MgCO3
WO3 ,Ta2 5 粉末を用いて表1中、材料No.2,
7,10の組成に秤量し、その主成分組成物1モル部に
対してY2 3 ,HfO2 ,ZrO2 ,MnO2 ,Sn
2 ,TiO2,CaO,La2 3 ,CeO2 ,Nd
2 3 ,Pr6 11,Sm2 3 の少なくとも一種の粉
末を表2に示す割合に秤量し、これをゴムで内張りした
ボールミルに水と共に入れ、8時間湿式混合した。次い
で、この混合物を脱水、乾燥した後、1000℃で2時
間仮焼し、当該仮焼物をボールミルに水、有機バインダ
ーを入れ8時間湿式粉砕した。
Example 2 As raw materials, BaCO 3 , MgCO 3 having a purity of 99% or more,
Using WO 3 and Ta 2 O 5 powder, the material No. 2,
7 and 10 were weighed, and Y 2 O 3 , HfO 2 , ZrO 2 , MnO 2 and Sn were added to 1 mol part of the main component composition.
O 2 , TiO 2 , CaO, La 2 O 3 , CeO 2 , Nd
At least one kind of powder of 2 O 3 , Pr 6 O 11 and Sm 2 O 3 was weighed in a ratio shown in Table 2, put in a ball mill lined with rubber together with water, and wet mixed for 8 hours. Next, this mixture was dehydrated and dried, and then calcined at 1000 ° C. for 2 hours, and the calcined material was wet-ground for 8 hours by adding water and an organic binder to a ball mill.

【0027】その後、この粉砕物を乾燥した後、50番
メッシュの網を通して造粒し、得られた粉末を3000
kg/cm2 の圧力で10mmφ×5mmtの寸法から
なる円柱に成形した。更に、この円柱を1400〜16
00℃×6時間の条件で焼成して磁器試料を得た。
Thereafter, the pulverized product was dried and then granulated through a mesh of No. 50 mesh, and the obtained powder was 3000
It was molded into a cylinder having a size of 10 mmφ × 5 mmt at a pressure of kg / cm 2 . Furthermore, this cylinder is 1400-16
Firing was performed under the condition of 00 ° C. × 6 hours to obtain a porcelain sample.

【0028】かくして得られた磁器試料について、周波
数10GHzにおける比誘電率(εr),Q値を誘電体
共振器法にて測定し、また25℃から85℃までの温度
範囲における共振周波数の温度変化率から共振周波数の
温度係数(τf)を計算した。それらの結果を表2に示
した。
With respect to the thus obtained porcelain sample, the relative permittivity (εr) and the Q value at a frequency of 10 GHz were measured by the dielectric resonator method, and the temperature change of the resonance frequency in the temperature range from 25 ° C to 85 ° C was measured. The temperature coefficient (τf) of the resonance frequency was calculated from the ratio. The results are shown in Table 2.

【0029】[0029]

【表2】 [Table 2]

【0030】表2によれば、主成分組成物にY,Hf,
Zr,Mn,Sn,Ti,Ca,La,Ce,Nd,P
r,Smの酸化物のうち少なくとも一種を0.2モル部
以内添加含有させてもQ値は3000以上の高い値が得
られ、同時に共振周波数の温度特性も±30ppm/℃
以内の範囲で任意の値に制御できることが判る。
According to Table 2, Y, Hf,
Zr, Mn, Sn, Ti, Ca, La, Ce, Nd, P
Even if at least one of the oxides of r and Sm is added in an amount of 0.2 mol parts or less, a high Q value of 3000 or more is obtained, and at the same time, the resonance frequency temperature characteristic is ± 30 ppm / ° C.
It can be seen that the value can be controlled to any value within the range.

【0031】[0031]

【発明の効果】以上詳述した通り、本発明によれば、B
aO、MgO、WO3 およびTa2 5 を所定の割合で
配合することにより、高周波領域において高い誘電率お
よびQ値を得ることができるとともに、Ta量を制御す
ることにより温度特性を一定領域で自由に制御すること
ができる。それにより、マイクロ波やミリ波領域におい
て使用される種々の共振器用材料やMIC用誘電体基板
材料等に充分適用することができる。
As described above in detail, according to the present invention, B
By blending aO, MgO, WO 3 and Ta 2 O 5 in a predetermined ratio, it is possible to obtain a high dielectric constant and a Q value in a high frequency region, and by controlling the Ta amount, the temperature characteristics can be controlled in a constant region. You can control it freely. As a result, it can be sufficiently applied to various resonator materials used in the microwave and millimeter wave regions, dielectric substrate materials for MIC, and the like.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 梶 源太郎 鹿児島県国分市山下町1番4号 京セラ株 式会社総合研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Gentaro Kaji, 1-4 Yamashita-cho, Kokubun-shi, Kagoshima Kyocera Stock Company Research Institute

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】BaO、MgO、WO3 及びTa2 5
含有し、モル比による組成式をxBaO・yMgO・z
WO3 ・wTaO5/2 と表した時、前記x、y、z、w
が 【数1】 を満足することを特徴とする高周波用誘電体磁器組成
物。
1. A composition formula containing BaO, MgO, WO 3 and Ta 2 O 5 and having a molar ratio of xBaO.yMgO.z.
When expressed as WO 3 wTaO 5/2 , the above x, y, z, w
Is [Equation 1] A dielectric ceramic composition for high frequency, characterized in that:
JP5101338A 1992-10-22 1993-04-27 High frequency dielectric ceramic composition Expired - Fee Related JP2842756B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5101338A JP2842756B2 (en) 1992-10-22 1993-04-27 High frequency dielectric ceramic composition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP28432292 1992-10-22
JP4-284322 1992-10-22
JP5101338A JP2842756B2 (en) 1992-10-22 1993-04-27 High frequency dielectric ceramic composition

Publications (2)

Publication Number Publication Date
JPH06187828A true JPH06187828A (en) 1994-07-08
JP2842756B2 JP2842756B2 (en) 1999-01-06

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Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110603610A (en) * 2017-03-31 2019-12-20 江陵原州大学校产学协力团 BMW-based high-frequency dielectric ceramic material and method for producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110603610A (en) * 2017-03-31 2019-12-20 江陵原州大学校产学协力团 BMW-based high-frequency dielectric ceramic material and method for producing same
CN110603610B (en) * 2017-03-31 2021-05-25 吴昌勇 BMW-based high-frequency dielectric ceramic material and method for producing same
US11027985B2 (en) 2017-03-31 2021-06-08 Chang Yong OH BMW-based high frequency dielectric ceramic material and method for manufacturing same

Also Published As

Publication number Publication date
JP2842756B2 (en) 1999-01-06

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