JP2000044338A - Dielectric ceramic composition and dielectric resonator produced by using the composition - Google Patents

Dielectric ceramic composition and dielectric resonator produced by using the composition

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Publication number
JP2000044338A
JP2000044338A JP10209770A JP20977098A JP2000044338A JP 2000044338 A JP2000044338 A JP 2000044338A JP 10209770 A JP10209770 A JP 10209770A JP 20977098 A JP20977098 A JP 20977098A JP 2000044338 A JP2000044338 A JP 2000044338A
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Japan
Prior art keywords
dielectric
composition
value
bao
dielectric ceramic
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JP10209770A
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JP3605295B2 (en
Inventor
Shunichi Murakawa
俊一 村川
Yoshihiro Okawa
善裕 大川
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Kyocera Corp
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Kyocera Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a dielectric ceramic composition for high-frequency use, having high Q-value in high-frequency range and exhibiting suppressed lowering of Q-value at high temperature (120 deg.C) compared with the Q-value at normal temperature (25 deg.C). SOLUTION: The objective composition is produced by adding <=3 pts.wt. of Mn to 100 pts.wt. of main component having a composition expressed by x ((1-a)BaO.aSrO).y (1-b)MgO.bAO}.zWO3 (A is at least one kind of element selected from iron group metals and Zn) and satisfying the formulas 0<a<1, 0.01<=b<=0.7, 0.40<=x<=0.55, 0.15<=y<=0.30, 0.20<=z<=0.30 and x+y+z=1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、マイクロ波、ミリ
波等の高周波領域において高い比誘電率及び高いQ値を
有する高周波用誘電体磁器組成物に関するものであり、
例えば、マイクロ波やミリ波などの高周波領域において
使用される種々の共振器用材料やMIC用誘電体基板材
料、誘電体導波路用材料や積層型セラミックコンデンサ
−等に用いることができる誘電体磁器組成物に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric ceramic composition having a high relative dielectric constant and a high Q value in a high frequency region such as microwaves and millimeter waves.
For example, a dielectric ceramic composition that can be used for various resonator materials, MIC dielectric substrate materials, dielectric waveguide materials, multilayer ceramic capacitors, and the like used in high frequency regions such as microwaves and millimeter waves. It is about things.

【0002】[0002]

【従来の技術】従来、誘電体磁器は、マイクロ波,ミリ
波等の高周波領域において、誘電体共振器やMIC用誘
電体基板等に広く利用されている。また最近では、ミリ
波用導波路に誘電体線路が応用されている。そこに要求
されている特性として、(1)誘電体中では波長が1/
√εrに短縮されるので、小型化の要求に対して比誘電
率が大きいこと、(2)高周波での誘電損失が小さい
事、すなわち高Q値であること、(3)共振周波数の温
度に対する変化が小さいこと、以上の3つの特徴が主と
して挙げられる。
2. Description of the Related Art Hitherto, dielectric ceramics have been widely used for dielectric resonators, MIC dielectric substrates, and the like in high-frequency regions such as microwaves and millimeter waves. Recently, dielectric waveguides have been applied to millimeter wave waveguides. The characteristics required therefor are as follows: (1) In a dielectric, the wavelength is 1 /
Since it is reduced to √εr, the relative permittivity is large for the demand for miniaturization, (2) the dielectric loss at high frequency is small, that is, a high Q value, and (3) the temperature of the resonance frequency is The main characteristics are that the change is small and the above three characteristics.

【0003】従来より、この種の誘電体磁器としては、
例えばZrO2 −SnO2 −TiO2 系材料、BaO−
TiO2 系材料、(Ba,Sr)(Zr,Ti)O3
材料及びBa(Zn,Ta)O3 系材料等が知られてい
る。しかしながら、最近では使用する周波数がより高く
なる傾向にあるとともに誘電体材料に対してさらに優れ
た誘電特性、特にQ値の向上が要求されている。
[0003] Conventionally, as this kind of dielectric porcelain,
For example, ZrO 2 —SnO 2 —TiO 2 based material, BaO—
TiO 2 -based materials, (Ba, Sr) (Zr, Ti) O 3 -based materials and Ba (Zn, Ta) O 3 -based materials are known. However, recently, the frequency to be used tends to be higher and the dielectric material is required to have more excellent dielectric properties, particularly to improve the Q value.

【0004】ところが、前述した従来の誘電体材料で
は、高周波、例えば10GHzの使用周波数領域におい
て実用的レベルの高いQ値を有していないのが現状であ
った。
However, the conventional dielectric materials described above do not have a practically high Q value at a high frequency, for example, a working frequency range of 10 GHz.

【0005】これに対し、最近では高周波領域において
高い比誘電率および高いQ値を有する組成物としてBa
O、MgOおよびWO3 を含む複合酸化物からなる誘電
体磁器組成物や、SrO、MgO、およびWO3 を含む
複合酸化物からなる誘電体磁器組成物(特開平5−20
5524号、特開平6−5117号)が提案され、さら
に、この2種類の酸化物を複合させること、即ちBa
O、SrO、MgO、WO3 からなる組成物を作製し、
さらに、これに対して、コバルト(Co)、ニッケル
(Ni)、亜鉛(Zn)等を少なくとも1種類以上を所
定量含有させることにより、高Q値を有することがで
き、共振周波数の温度係数(τf )をマイナス側からプ
ラス側に移行できることが提案された。
On the other hand, recently, as a composition having a high relative dielectric constant and a high Q value in a high frequency region, Ba
Dielectric porcelain composition comprising a composite oxide containing O, MgO and WO 3 and dielectric porcelain composition comprising a composite oxide containing SrO, MgO and WO 3 (JP-A-5-20
No. 5524, Japanese Patent Application Laid-Open No. 6-5117).
A composition comprising O, SrO, MgO, and WO 3 was prepared,
On the other hand, by including at least one kind of cobalt (Co), nickel (Ni), zinc (Zn) or the like in a predetermined amount, a high Q value can be obtained, and the temperature coefficient of the resonance frequency ( It has been proposed that τf) can be shifted from the negative side to the positive side.

【0006】[0006]

【発明が解決しようとする課題】この誘電体磁器組成物
において、Ba0及びSrOのモル比を変化させること
により共振周波数の温度係数(τf )を自由に制御する
ことができるとともに、コバルト(Co)、ニッケル
(Ni)、亜鉛(Zn)等の少なくとも1種類以上を所
定量含有することで、高い磁器密度を実現し、高Q値を
得ることができる。
In this dielectric porcelain composition, the temperature coefficient (τf) of the resonance frequency can be freely controlled by changing the molar ratio of Ba0 and SrO, and cobalt (Co) By containing a predetermined amount of at least one of nickel, nickel (Ni) and zinc (Zn), a high porcelain density can be realized and a high Q value can be obtained.

【0007】しかしながら、この誘電体磁器組成物は、
高周波領域において高いQが得られるものの、Wの価数
変化や、Zn等の蒸発などで磁器内部に欠陥が生じ安
く、Q値が低下しやすく、また高温中(120℃)での
Q値が、常温(25℃)中でのQ値より大きく低下し、
高Q値のメリットを十分享受できないという問題があっ
た。
However, this dielectric porcelain composition has
Although a high Q can be obtained in a high frequency region, defects occur inside the porcelain due to a change in the valence of W, evaporation of Zn or the like, and the Q value tends to decrease, and the Q value at high temperature (120 ° C.) , Significantly lower than the Q value at normal temperature (25 ° C),
There has been a problem that the merits of the high Q value cannot be sufficiently enjoyed.

【0008】[0008]

【課題を解決するための手段】本発明者等は、上記問題
点に対して種々検討を加えた結果、BaO、SrO、M
gO、WO3 に対してコバルト(Co)、ニッケル(N
i)、亜鉛(Zn)等を少なくとも1種以上を含有させ
た組成物にMnO2 を所定量含有させることにより、Q
値を安定させ、高温(120℃)でのQ値低下を小さく
することができることを知見し、本発明に至った。
The present inventors have made various studies on the above problems and found that BaO, SrO, M
gO, WO 3 against cobalt (Co), nickel (N
i), by adding a predetermined amount of MnO 2 to a composition containing at least one kind of zinc (Zn) or the like, Q
The present inventors have found that the value can be stabilized and a decrease in the Q value at a high temperature (120 ° C.) can be reduced, and the present invention has been achieved.

【0009】即ち、本発明の高周波用誘電体磁器組成物
は、金属元素として少なくともBa、Sr、Mgおよび
Wを含有し、これらの金属元素酸化物のモル比による組
成式を、x{(1−a)BaO・aSrO}・y{(1
−b)MgO・bAO}・zWO3 (Aは鉄族金属およ
びZnのうち少なくとも一種)と表した時、前記a、
b、x、yおよびzが、0<a<1、0.01≦b≦
0.7、0.40≦x≦0.55、0.15≦y≦0.
30、0.20≦z≦0.30、x+y+z=1の範囲
内にある主成分100重量部に対して、MnO2 換算で
3重量部以下のMnを含有するものである。
That is, the high frequency dielectric ceramic composition of the present invention contains at least Ba, Sr, Mg and W as metal elements, and a composition formula based on a molar ratio of these metal element oxides is expressed as x {(1 −a) BaO · aSrO} · y {(1
-B) When expressed as MgO · bAO} · zWO 3 (A is at least one of iron group metals and Zn),
b, x, y and z are 0 <a <1, 0.01 ≦ b ≦
0.7, 0.40 ≦ x ≦ 0.55, 0.15 ≦ y ≦ 0.
30, 100 parts by weight of the main component in the range of 0.20 ≦ z ≦ 0.30, x + y + z = 1, containing 3 parts by weight or less of Mn in terms of MnO 2 .

【0010】また本発明の誘電体磁器組成物は、一般式
(Ba1-a Sra ){(Mg1-b b 1/2 1/2 }O
3 で表されるペロブスカイト型結晶(0<a<1、0.
01≦b≦0.7)を主結晶相とし、Mnの全部または
一部を固溶させることが望ましい。
[0010] The dielectric ceramic composition of the present invention have the general formula (Ba 1-a Sr a) {(Mg 1-b A b) 1/2 W 1/2} O
3 (0 <a <1, 0.
(01 ≦ b ≦ 0.7) is the main crystal phase, and it is preferable that all or a part of Mn be dissolved.

【0011】ここで、BaOのSrOによる置換量aを
0<a<1としたのは、a=0又は1ではBa、Srの
固溶体が得られず、共振周波数の温度係数(τf )の制
御効果が得られないからである。また、MgOの鉄族金
属及びZnによる置換量bを0.01≦b≦0.7とし
たのは、bが0.01未満では焼成温度の低下や磁器密
度の向上の効果が殆ど得られず、0.7より多いときは
Q値の低下が著しいからである。このbは、より高い磁
器密度かつ高いQ値を得るという点から、0.01≦b
≦0.65であることが望ましい。鉄族金属としては、
Fe、Ni、Coがあるが、これらの内でもNi、Co
が望ましい。
Here, the reason why the substitution amount a of BaO by SrO is set to 0 <a <1 is that when a = 0 or 1, a solid solution of Ba and Sr is not obtained, and the temperature coefficient (τf) of the resonance frequency is controlled. This is because the effect cannot be obtained. The reason why the substitution amount b of MgO with the iron group metal and Zn is 0.01 ≦ b ≦ 0.7 is that when b is less than 0.01, the effect of lowering the firing temperature and improving the porcelain density is almost obtained. This is because when the ratio is more than 0.7, the Q value is significantly reduced. This b is 0.01 ≦ b from the viewpoint of obtaining a higher porcelain density and a higher Q value.
It is desirable that ≦ 0.65. As iron group metals,
There are Fe, Ni, and Co. Among them, Ni, Co
Is desirable.

【0012】さらに、各a、bに対して組成比を上記の
範囲に限定したのは、上記範囲外では固溶の効果が不充
分であるか、または、焼結性の低下やQ値の低下という
問題が生じるからである。
Furthermore, the reason why the composition ratio is limited to the above range for each of a and b is that the effect of solid solution is insufficient outside the above range, or the sinterability is lowered or the Q value is lowered. This is because a problem of lowering occurs.

【0013】即ち、モル比xを0.40≦x≦0.55
としたのは、0.40よりも小さい場合や、0.55よ
りも大きい場合には、Q値が低下するからである。x
は、Q値向上という理由から0.49≦x≦0.52が
望ましい。
That is, when the molar ratio x is 0.40 ≦ x ≦ 0.55
This is because the Q value decreases when the value is smaller than 0.40 or larger than 0.55. x
Is preferably 0.49 ≦ x ≦ 0.52 from the viewpoint of improving the Q value.

【0014】また、MgOのモル比を0.15≦y≦
0.30としたのは、yが0.15よりも小さい場合に
はQ値が低下し、0.30よりも大きい場合にはQ値が
低下したり、焼結不良となるからである。MgOのモル
比yは、Q値の向上と焼結性という理由から0.20≦
y≦0.27であることが望ましい。
Further, the molar ratio of MgO is 0.15 ≦ y ≦
The reason for setting the value to 0.30 is that when y is smaller than 0.15, the Q value decreases, and when y is larger than 0.30, the Q value decreases or sintering becomes poor. The molar ratio y of MgO is 0.20 ≦ M from the reason of improvement of Q value and sinterability.
It is desirable that y ≦ 0.27.

【0015】また、WO3 のモル比を0.20≦z≦
0.30としたのは、zが0.20よりも小さい場合に
は焼結不良となり、0.30よりも大きい場合にはQ値
が低下するからである。WO3 のモル比zは、Q値の向
上と焼結性という理由から0.22≦z≦0.28が望
ましい。
Further, the molar ratio of WO 3 is set to 0.20 ≦ z ≦
The reason for setting the value to 0.30 is that when z is smaller than 0.20, sintering becomes defective, and when z is larger than 0.30, the Q value decreases. The molar ratio z of WO 3 is preferably 0.22 ≦ z ≦ 0.28 from the viewpoint of improving the Q value and sinterability.

【0016】また、本発明は、上記主成分100重量部
に対して、MnO2 換算で3重量部以下のMnを含有す
る誘電体磁器組成物を特徴とする。
Further, the present invention is characterized in that the dielectric ceramic composition contains MnO 2 in an amount of 3 parts by weight or less based on 100 parts by weight of the main component.

【0017】即ち、上記主成分にMnを含有させること
によって、εrやτf を変化させずに、Q値を安定さ
せ、さらに、高温でのQ値の低下を小さく抑えることが
できるのである。また、Mnの含有量をMnO2 換算で
3重量部以下としたのは、3重量部を越えるとQ値が極
端に小さくなり、τf が+側にシフトするためである。
さらに、Mnの含有量は0重量部であってはならず、上
述した効果を奏するためには、Mnの含有量をMnO2
換算で0.01重量部以上とすることが望ましい。
That is, by adding Mn to the main component, the Q value can be stabilized without changing εr and τf, and the decrease in the Q value at high temperatures can be suppressed. Further, the reason that the content of Mn is 3 parts by weight or less in terms of MnO 2 is that if it exceeds 3 parts by weight, the Q value becomes extremely small, and τf shifts to the + side.
Further, the content of Mn must not be 0 parts by weight, and in order to achieve the above-described effects, the content of Mn must be MnO 2
Desirably, it is 0.01 parts by weight or more in terms of conversion.

【0018】本発明の誘電体磁器組成物は、例えば以下
のようにして作製される。Ba、Sr、Mg、Wの酸化
物あるいは焼成により酸化物を生成する炭酸塩、硝酸塩
等の金属塩を主原料として準備し、これらを前述の範囲
になるように秤量した後、充分に混合する。その後、大
気中において900〜1200℃で1〜4時間仮焼処理
する。得られた仮焼物に、例えば、CoOのようなコバ
ルト化合物、NiOのようなニッケル化合物、ZnOの
ような亜鉛化合物の各化合物を所定量となるように秤量
し添加して、さらにMnO2 を所定量添加し、混合粉砕
する。そして、これをプレス成形やドクターブレード法
等の成形方法により所定の形状に成形する。次に成形体
を大気中等の酸化性雰囲気中で1300℃〜1450℃
で1〜8時間焼成することにより誘電体磁器を得ること
ができる。
The dielectric porcelain composition of the present invention is produced, for example, as follows. Prepare an oxide of Ba, Sr, Mg, W or a metal salt such as a carbonate or a nitrate which generates an oxide by firing as a main raw material, weigh them to the above-mentioned range, and mix them sufficiently. . Then, it is calcined at 900 to 1200 ° C. in the atmosphere for 1 to 4 hours. To the obtained calcined product, for example, each compound of a cobalt compound such as CoO, a nickel compound such as NiO, and a zinc compound such as ZnO is weighed to a predetermined amount and added, and MnO 2 is further added. Add a fixed amount and mix and grind. Then, this is molded into a predetermined shape by a molding method such as press molding or a doctor blade method. Next, the molded body is heated to 1300 ° C. to 1450 ° C. in an oxidizing atmosphere such as the air.
For 1 to 8 hours to obtain a dielectric porcelain.

【0019】本発明においては、不可避不純物としてC
l,Ca,Zr等が混入する場合があり、またCl,C
a,Zr等が酸化物換算で0.1重量%程度混入しても
特性上問題ない。特に、前記誘電体組成物に対してAl
およびYの各元素の存在は、焼成温度を上昇させる傾向
があるため、本発明によれば、これらの金属元素量は、
不純物も含め、酸化物換算で全量中5重量%以下となる
ように制御することが望ましい。
In the present invention, C is used as an unavoidable impurity.
l, Ca, Zr, etc. may be mixed, and Cl, C
Even if a, Zr, etc. are mixed in an amount of about 0.1% by weight in terms of oxide, there is no problem in characteristics. In particular, for the dielectric composition, Al
Since the presence of each element of Y and Y tends to increase the firing temperature, according to the present invention, the amounts of these metal elements are:
It is desirable to control so that the content is 5% by weight or less of the total amount in terms of oxide, including impurities.

【0020】また、本発明においては、Q値を高くする
為に、一般式(Ba1-a Sra ){(Mg1-b b
1/2 1/2 }O3 で表されるペロブスカイト型結晶(0
<a<1、0.01≦b≦0.7)を主結晶とすること
が望ましいが、その他に、BaWO4 ,SrWO4 等の
結晶が微量存在していても、特性上殆ど問題ない。さら
に、Mnは全部又は一部が上記主結晶に固溶しているこ
とが好ましい。
[0020] In the present invention, in order to increase the Q value, the formula (Ba 1-a Sr a) {(Mg 1-b A b)
Perovskite crystal represented by 1/2 W 1/2 } O 3 (0
It is preferable that <a <1, 0.01 ≦ b ≦ 0.7) be the main crystal. However, even if a small amount of crystals such as BaWO 4 and SrWO 4 are present, there is almost no problem in characteristics. Further, it is preferable that Mn is entirely or partially dissolved in the main crystal.

【0021】また、本発明は、上記の誘電体磁器組成物
を一対の入出力端子間に配置して誘電体共振器を構成し
たことを特徴とする。
Further, the present invention is characterized in that the dielectric ceramic composition is arranged between a pair of input / output terminals to constitute a dielectric resonator.

【0022】即ち、本発明の誘電体共振器は、例えば、
図1にTEモ−ド型共振器を示すように、金属ケ−ス1
の両側に入力端子2及び出力端子3を形成し、これらの
端子2、3の間に上記したような組成からなる誘電体磁
器組成物のセラミックス体4を配置して構成される。こ
のように、TEモ−ド型の誘電体共振器は、入力端子2
からマイクロ波が入力され、マイクロ波はセラミックス
体4と自由空間との境界の反射によってセラミックス体
4内に閉じこめられ、特定の周波数で共振を起こす。こ
の信号が出力端子3と電磁界結合し、出力される。
That is, the dielectric resonator of the present invention has, for example,
As shown in FIG. 1 showing a TE mode resonator, a metal case 1 is shown.
An input terminal 2 and an output terminal 3 are formed on both sides of the ceramic material, and a ceramic body 4 of a dielectric ceramic composition having the above-described composition is arranged between these terminals 2 and 3. As described above, the TE mode dielectric resonator has the input terminal 2
, And is confined in the ceramic body 4 by reflection at the boundary between the ceramic body 4 and free space, and resonates at a specific frequency. This signal is electromagnetically coupled to the output terminal 3 and output.

【0023】また、図示はしないが、本発明の誘電体磁
器組成物は、TEMモ−ドを用いた同軸共振器やストリ
ップ線路共振器、TMモ−ドの誘電体共振器、その他の
共振器に適用しても良いことは勿論である。
Although not shown, the dielectric ceramic composition of the present invention can be used for a coaxial resonator, a stripline resonator using a TEM mode, a TM mode dielectric resonator, and other resonators. Needless to say, it may be applied to

【0024】[0024]

【作用】本発明の誘電体磁器組成物では、金属元素とし
て少なくともBa、Sr、Mg、及びWを含有し、これ
らの金属元素酸化物のモル比による組成式を x{(1
−a)BaO・aSrO}・y{(1−b)MgO・b
AO}・zWO3 (Aは鉄族金属及びZnのうち少なく
とも一種)と表した時、これに所定のMnを含有させる
ことで、安定したQ値を示し、高温(120℃)でのQ
値の低下を小さくすることができる誘電体磁器組成物が
得られる。
The dielectric porcelain composition of the present invention contains at least Ba, Sr, Mg, and W as metal elements, and the composition formula based on the molar ratio of these metal element oxides is x {(1
-A) BaO.aSrO} .y {(1-b) MgO.b
When expressed as AO} · zWO 3 (A is at least one of iron group metals and Zn), a predetermined Mn is contained therein, so that a stable Q value is exhibited, and Q at high temperature (120 ° C.)
A dielectric porcelain composition that can reduce the decrease in the value can be obtained.

【0025】[0025]

【実施例】原料として純度99%以上のBaCO3 、S
rCO3 、MgCO3 、CoO(あるいはNiO、ある
いはZnO)及び、WO3 の各粉末を用いて、これらを
表1〜表2に示す割合に秤量し、これをゴムで内張りし
たボールミルにIPAとともに入れ、ZrO2 ボールを
用いて8時間湿式混合した。次いで、この混合物を脱溶
媒、乾燥した後、大気中において1000℃で2時間仮
焼した。当該仮焼物にMnO2 を加え、ボールミルにI
PAを入れ、ZrO2 ボールを用いて8時間湿式粉砕し
た。
EXAMPLES As raw materials, BaCO 3 and S having a purity of 99% or more were used.
rCO 3, MgCO 3, CoO (or NiO or ZnO,) and, using the powder of WO 3, it was weighed to a ratio shown in Table 1 to Table 2, which were placed with IPA in a ball mill lined with rubber And wet mixing using a ZrO 2 ball for 8 hours. Next, the mixture was desolvated and dried, and then calcined in the air at 1000 ° C. for 2 hours. MnO 2 was added to the calcined product, and I was added to a ball mill.
PA was added and wet milled for 8 hours using ZrO 2 balls.

【0026】その後、この粉砕物を乾燥、有機バインダ
ーを添加した後、40番メッシュの網を通して造粒し、
得られた粉末を1000kg/cm2 の圧力で直径12
mm厚み6mmの寸法の円柱に成形した。更に、この円
柱を大気中において1300〜1600℃で2〜6時間
の条件で焼成し、磁器を得た。この磁器を研磨して直径
8mm、厚み4〜5mmの寸法の試料を得た。
Thereafter, the pulverized product was dried, an organic binder was added, and the mixture was granulated through a No. 40 mesh net.
The obtained powder was compressed at a pressure of 1000 kg / cm 2 to a diameter of 12
It was formed into a cylinder having a thickness of 6 mm and a thickness of 6 mm. Further, the column was fired in the atmosphere at 1300 to 1600 ° C. for 2 to 6 hours to obtain a porcelain. The porcelain was polished to obtain a sample having a diameter of 8 mm and a thickness of 4 to 5 mm.

【0027】得られた試料について、アルキメデス法に
て磁器密度を測定した。また周波数約10〜11GHz
における比誘電率(εr )、Q値を誘電体共振器法にて
測定し、Q値については一般式Qf=一定がなりたつと
みなして10GHzにおけるQ値に換算した。また25
℃から85℃までの各温度におけるTE011モード共
振周波数の温度係数(τf)を計算した。さらに、Q値
については、120℃でのQ値も測定し、常温(25
℃)でのQ値との差を低下率として計算した。
The porcelain density of the obtained sample was measured by the Archimedes method. The frequency is about 10-11GHz
Was measured by the dielectric resonator method, and the Q value was converted to a Q value at 10 GHz, assuming that the general formula Qf = constant. Also 25
The temperature coefficient (τf) of the TE011 mode resonance frequency at each temperature from ° C to 85 ° C was calculated. Furthermore, regarding the Q value, the Q value at 120 ° C. was also measured, and the room temperature (25 ° C.)
(° C.) was calculated as the rate of decrease.

【0028】それらの結果を表1、2に示す。The results are shown in Tables 1 and 2.

【0029】[0029]

【表1】 [Table 1]

【0030】[0030]

【表2】 [Table 2]

【0031】この表から、本発明の高周波誘電体磁器組
成物は、Mnを加えることにより、従来例に比べてQ値
が高くかつ安定するとともに、高温(120℃)での常
温(25℃)に対するQ値の低下率を小さくできること
がわかる。
From this table, it can be seen that the high frequency dielectric ceramic composition of the present invention has a higher Q value and is more stable than the conventional example by adding Mn, and also has a high temperature (120 ° C.) at room temperature (25 ° C.). It can be seen that the rate of decrease of the Q value with respect to

【0032】尚、得られた磁器について、X線回折測定
を行った結果、本発明の試料では、一般式(Ba1-a
a ){(Mg1-b b 1/2 1/2 }O3 で表される
ペロブスカイト型結晶(0<a<1、0.01≦b≦
0.7)を主結晶相とすることを確認した。さらに、M
nが固溶していることは、TEMを使って、粒内にMn
が存在することを確認した。また、Mnの一部は、粒界
にも存在することを確認した。
Incidentally, the obtained porcelain was subjected to X-ray diffraction measurement. As a result, the sample of the present invention was found to have the general formula (Ba 1 -a S
r a ) {(Mg 1 -b Ab ) 1/2 W 1/2 } O 3 perovskite crystal (0 <a <1, 0.01 ≦ b ≦
0.7) was confirmed to be the main crystal phase. Further, M
The fact that n is in solid solution can be confirmed by using TEM,
Was confirmed to exist. In addition, it was confirmed that part of Mn was also present at the grain boundaries.

【0033】[0033]

【発明の効果】本発明の高周波用誘電体磁器組成物で
は、BaO、SrO、MgO及びWO3からなる主成分
に鉄族金属および亜鉛を所定量含有することにより、共
振周波数の温度係数(τf)の制御を容易に行うことが
でき、MnO2 を所定量加えることで、高Q値を安定さ
せ、さらに高温(120℃)でのQ値の低下を抑えるこ
とができ、10GHzでのQ値を3000以上と高くす
ることができる。
According to the dielectric ceramic composition for high frequency waves of the present invention, the main component consisting of BaO, SrO, MgO and WO 3 contains a predetermined amount of an iron group metal and zinc, so that the temperature coefficient of resonance frequency (τf ) Can be easily controlled, a high Q value can be stabilized by adding a predetermined amount of MnO 2 , and further, a decrease in the Q value at a high temperature (120 ° C.) can be suppressed, and the Q value at 10 GHz can be controlled. Can be as high as 3000 or more.

【0034】これにより得られた磁器はマイクロ波やミ
リ波領域において使用される共振器材料、MIC用誘電
体基板材料、コンデンサー用材料、誘電体アンテナ用材
料、誘電体導波路用材料等に充分適用することができ
る。
The porcelain thus obtained is sufficient for a resonator material, a dielectric substrate material for MIC, a material for a capacitor, a material for a dielectric antenna, a material for a dielectric waveguide used in a microwave or millimeter wave region. Can be applied.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の誘電体共振器を示す概略図である。FIG. 1 is a schematic diagram showing a dielectric resonator of the present invention.

【符号の説明】[Explanation of symbols]

1:金属ケ−ス 2:入力端子 3:出力端子 4:共振媒体 1: metal case 2: input terminal 3: output terminal 4: resonance medium

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4G030 AA07 AA09 AA10 AA24 AA25 AA27 AA32 BA09 CA01 GA04 GA20 GA22 GA25 GA27 5G303 AA02 AA05 AA10 AB08 AB11 AB20 BA12 CA01 CB03 CB17 CB18 CB32 CB37 5J006 HC07 LA14  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G030 AA07 AA09 AA10 AA24 AA25 AA27 AA32 BA09 CA01 GA04 GA20 GA22 GA25 GA27 5G303 AA02 AA05 AA10 AB08 AB11 AB20 BA12 CA01 CB03 CB17 CB18 CB32 CB37 5J006 HC07 LA14

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】金属元素として少なくともBa、Sr、M
gおよびWを含有し、これらの金属元素酸化物のモル比
による組成式を x{(1−a)BaO・aSrO}・y{(1−b)M
gO・bAO}・zWO3 (Aは鉄族金属およびZnのうち少なくとも一種)と表
した時、前記a、b、x、yおよびzが 0<a<1 0.01≦b≦0.7 0.40≦x≦0.55 0.15≦y≦0.30 0.20≦z≦0.30 x+y+z=1 の範囲内にある主成分100重量部に対して、MnO2
換算で3重量部以下のMnを含有することを特徴とする
誘電体磁器組成物。
At least Ba, Sr, M as a metal element
g and W, and the composition formula based on the molar ratio of these metal element oxides is expressed as x {(1-a) BaO.aSrO} .y {(1-b) M
When expressed as gO · bAO} · zWO 3 (A is at least one of iron group metals and Zn), a, b, x, y and z are 0 <a <1 0.01 ≦ b ≦ 0.7 0.40 ≦ x ≦ 0.55 0.15 ≦ y ≦ 0.30 0.20 ≦ z ≦ 0.30 MnO 2 with respect to 100 parts by weight of the main component in the range of x + y + z = 1
A dielectric porcelain composition characterized by containing 3 parts by weight or less of Mn in conversion.
【請求項2】一般式(Ba1-a Sra ){(Mg1-b
b 1/2 1/2 }O3 で表されるペロブスカイト型結晶
(0<a<1、0.01≦b≦0.7)を主結晶相と
し、Mnの全部又は一部が固溶していることを特徴とす
る請求項1記載の誘電体磁器組成物。
Wherein the general formula (Ba 1-a Sr a) {(Mg 1-b A
b ) A main crystal phase is a perovskite crystal (0 <a <1, 0.01 ≦ b ≦ 0.7) represented by 1/2 W 1/2 } O 3 , and all or a part of Mn is solid. The dielectric ceramic composition according to claim 1, wherein the composition is dissolved.
【請求項3】請求項1又は2記載の誘電体磁器組成物で
もって所定形状とした共振器媒体に設けた一対の入力端
子間に、高周波信号を印加して所望の周波数で共振させ
るようにしたことを特徴とする誘電体共振器。
3. A high frequency signal is applied between a pair of input terminals provided on a resonator medium having a predetermined shape with the dielectric ceramic composition according to claim 1 so as to resonate at a desired frequency. A dielectric resonator characterized in that:
JP20977098A 1998-07-24 1998-07-24 Dielectric ceramic composition and dielectric resonator using the same Expired - Fee Related JP3605295B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002087881A (en) * 2000-09-18 2002-03-27 Kyocera Corp Dielectric ceramic composition and dielectric resonator using the same
JP2003201177A (en) * 2001-07-16 2003-07-15 Ngk Spark Plug Co Ltd Dielectric ceramic
KR20180111505A (en) 2017-03-31 2018-10-11 강릉원주대학교산학협력단 BMW based microwave dielectric ceramics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002087881A (en) * 2000-09-18 2002-03-27 Kyocera Corp Dielectric ceramic composition and dielectric resonator using the same
JP4535589B2 (en) * 2000-09-18 2010-09-01 京セラ株式会社 Dielectric porcelain and dielectric resonator using the same
JP2003201177A (en) * 2001-07-16 2003-07-15 Ngk Spark Plug Co Ltd Dielectric ceramic
KR20180111505A (en) 2017-03-31 2018-10-11 강릉원주대학교산학협력단 BMW based microwave dielectric ceramics

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