JPH06177240A - Semiconductor device - Google Patents

Abstract

PURPOSE:To provide a semiconductor device in which moisture resistance is maintained, a wire discontinuity, a short circuit between metal wiring layers can be avoided, influence of manufacturing steps is hardly affected and which has high reliability and high yield. CONSTITUTION:The semiconductor device comprises a BPSG film 3 made of an interlayer insulating film and an aluminum wiring layer 5a on one main surface of a semiconductor substrate 1 formed with a field oxide film 2. The device further comprises a scribing line structure in which an opening 4 is formed at the insulating film made of the film 3, its surface and side faces are covered with aluminum wiring layers 5 and which is covered with a passivation film made of a silicon nitride film 6 arranged directly above the layer 5. An interlayer insulating film of a chip side on the line is not brought into direct contact with the atmosphere via the wiring layer and the film 6. Further, the surface and the side face of the insulating film on the line are covered with metal wiring layers, an a sidewall of the wiring layer is not formed at an end of the insulating film on the line groove even at the time of etching the wiring layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a scribe line structure of a semiconductor device having a plurality of interlayer insulating films and a metal wiring layer on one main surface of a semiconductor substrate.

[0002]

2. Description of the Related Art Recently, in semiconductor integrated circuit devices,
With high integration and high performance of devices, a high-concentration phosphorus glass (PSG) film or a boron-phosphorus glass (BPSG) film is adopted as an interlayer insulating film on a semiconductor substrate in order to reduce surface steps.

In this type of semiconductor device, the high-concentration PSG film or BPSG film is exposed at the scribe line. As is known, high-concentration PSG film or BPS
The G film has hygroscopicity, and when water is absorbed, phosphoric acid is generated, which corrodes the aluminum wiring and causes a problem of disconnection.

To solve this problem, the moisture resistance of the silicon nitride film is utilized to provide a scribe line structure in which at least the surface and side surfaces of the high-concentration PSG film or BPSG film are covered with the silicon nitride film. A semiconductor device is disclosed.

[0005]

However, the conventional semiconductor device has the following problems due to the structure of the scribe line.

In the aluminum multi-layer wiring, side walls of the aluminum wiring layer and egre of the silicon substrate are formed at the ends of the lower interlayer insulating film in the scribe line groove when the aluminum wiring layers of the respective layers are etched. Here, since the side wall of the aluminum wiring layer has a small contact portion with the silicon substrate and the adhesion is poor, it is peeled off in this step or a later step and is scattered in the chip, resulting in disconnection between aluminum wiring layers. Cause shorts and shorts.

FIG. 8 is a cross-sectional view showing a manufacturing process of this type of semiconductor device, in which an aluminum wiring layer 5a forming an upper wiring layer is formed.
2 shows a state in which the side wall 20 made of an aluminum wiring layer and the egre 21 of the silicon substrate 1 are formed at the end of the BPSG film 3 forming the lower interlayer insulating film on the scribe line at the time of etching.

In the figure, 2 is a field oxide film.

As described above, the side wall 20 made of the aluminum wiring layer is peeled off at the same time during this step or a post-step, for example, a silicon residual treatment etching after etching or a resist film peeling step, and the inside of the chip is removed. Which causes disconnection and shorts between aluminum wiring layers, which is a problem in terms of reliability and yield of semiconductor devices.

When the alignment mark, vernier or monitor element is inserted in the scribe line area, the same problem as described above occurs at the end of the area where the alignment mark, vernier and monitor element are arranged.

Further, the same problem as described above occurs when etching each aluminum multi-wiring layer of a semiconductor device having two or more aluminum multi-wiring layers.

Therefore, the present invention is to solve such a problem, and an object of the present invention is to maintain the humidity resistance and not to be influenced by the manufacturing process and the like, to have high reliability and high reliability. An object is to provide a semiconductor device having a yield.

[0013]

The semiconductor device of the present invention comprises:
In a semiconductor device having a plurality of interlayer insulating films and a metal wiring layer on one main surface of a semiconductor substrate, an opening is provided in the interlayer insulating film, and at least a surface and a side surface of the opening of the insulating film. Has a scribe line structure which is covered with the metal wiring layer and a passivation film on the metal wiring layer.

The semiconductor device of the present invention is a semiconductor device having a plurality of interlayer insulating films and a metal wiring layer on one main surface of a semiconductor substrate, wherein the interlayer insulating film is provided with an opening. The side surface of the opening of the insulating film has a sidewall made of at least a metal layer, and the surfaces of the sidewall and the insulating film are covered with the metal wiring layer and a passivation film on the metal wiring layer. It is characterized by having a scribe line structure.

The semiconductor device of the present invention is a semiconductor device comprising a plurality of interlayer insulating films and at least two or more metal wiring layers on one main surface of a semiconductor substrate, wherein the plurality of interlayer insulating films are laminated. An opening portion is provided in the insulating film made of, and at least the surface and the side surface of the opening portion of the insulating film are covered with the uppermost metal wiring layer of the metal wiring layer and the passivation film immediately above the metal wiring layer. A semiconductor device having a scribe line structure as described above.

The semiconductor device according to the present invention is a semiconductor device comprising a plurality of interlayer insulating films and at least two or more metal wiring layers on one main surface of a semiconductor substrate.
An opening is provided in the interlayer insulating film, and at least the surface and the side surface of the opening of the first interlayer insulating film are covered with the first metal wiring layer and the second interlayer insulating film immediately above the first metal wiring layer. Further, an opening portion is provided in the second interlayer insulating film directly above the first metal wiring layer, and at least a surface and a side surface of the opening portion of the second interlayer insulating film has the second metal wiring layer and The structure covered with the third interlayer insulating film immediately above the second metal wiring layer is sequentially repeated, and the uppermost metal wiring layer has a scribe line structure so as to be covered with the passivation film. To do.

Further, in this case, it is preferable that the hole size of the hole of the interlayer insulating film is the same as the hole size of the holes simultaneously formed in the chip.

Further, in this case, it is preferable that a metal layer is embedded in the opening of the interlayer insulating film.

Further, in this case, it is preferable that the metal wiring layer is connected to a metal wiring layer in a chip having a constant potential.

Further, in this case, one region in which the alignment mark, the vernier and the monitor element are formed is arranged in the scribe line region, and at least the passivation layer between the metal wiring layer and the one region is arranged. The membrane is preferably provided with an aperture.

Further, in this case, it is preferable that the passivation film is selected from a silicon nitride film or a laminated film containing at least a silicon nitride film.

Further, in this case, it is preferable that the interlayer insulating film includes at least a high-concentration phosphorus glass film or a boron-phosphorus glass film.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A typical embodiment of the present invention will be specifically described below with reference to the drawings.

FIG. 1 is a sectional view of a semiconductor device showing an embodiment of the present invention. In the figure, 1 to 3 and 5a are exactly the same as those of the conventional semiconductor device shown in FIG.

In FIG. 1, this semiconductor device is
On the one main surface of the semiconductor substrate 1 on which the oxide film 2 is formed,
The BPSG film 3 forming an interlayer insulating film and the aluminum wiring layer 5a are provided, and the insulating film made of the BPSG film 3 is provided with an opening portion 4 whose surface and side surface are covered with the aluminum wiring layer 5. In addition, it has a scribe line structure so as to be covered with a passivation film made of a silicon nitride film 6 disposed directly above the aluminum wiring layer 5.

In the figure, reference numeral 5a denotes an aluminum wiring layer which is formed in the same layer as the aluminum wiring layer 5 and which constitutes wiring in the chip.

Here, the BPSG film 3, the aluminum wiring layer 5,
5a and the silicon nitride film 6 each have a thickness of 400
0 to 10000Å, 4000 to 10000Å,
And about 5000 to 10000Å, and the B ₂ O ₃ and P ₂ O ₅ concentrations in the BPSG film 3 are set to about 2 to 10 mol% and 2 to 10 mol%, respectively.

Next, one embodiment of a method of manufacturing the semiconductor device shown in FIG. 1 will be described with reference to FIG.

After forming a field oxide film 2 and a BPSG film 3 forming an interlayer insulating film on one main surface of the semiconductor substrate 1 by a conventional method, a contact hole is formed on the interlayer insulating film formed of the BPSG film 3. (Not shown in FIG. 1). Simultaneously with the formation of this contact hole, a slit-shaped opening 4 is formed in the BPSG film 3 in the scribe line formation region.

Next, at the same time when the aluminum wiring layer 5a is formed, the aluminum wiring layer 5 is formed on the surface and the side surface of the slit-shaped opening 4 provided in the BPSG film 3 in the scribe line formation region, and then the aluminum wiring layer 5a is formed. A passivation film made of a silicon nitride film 6 is formed so as to cover the wiring layer 5.

Further, at the same time when the pad portion (not shown in FIG. 1) is opened, the BP on the scribe line formation region is formed.
The SG film 3 and the silicon nitride film 6 are 2 to 20 μm from the chip end.
By selectively removing at a position of about m, the semiconductor device shown in FIG. 1 is obtained.

According to the structure and the manufacturing method of the above embodiment, the BPS that continues from inside the chip to above the scribe line
Since the G film 3 is terminated by the aluminum wiring layer 5 on the scribe line and further covered by the silicon nitride film 6 so that there is no part in direct contact with the outside air, the hygroscopic property of the BPSG film 3 is silicon. The moisture resistance of the nitride film 6 prevents the nitride film 6.

Furthermore, BPSG on the scribe line
The film 3 is opened like a slit when the contact hole is opened, but since the aluminum wiring layer 5 is formed on the surface and the side surface of the opening portion 4, the etching of the aluminum wiring layer 5a is performed. At times, the side wall of the aluminum wiring layer is not formed at the end of the BPSG film 3 on the scribe line. Therefore, the side wiring of the aluminum wiring layer as described above
It is possible to avoid problems such as breakage and shorts between aluminum wiring layers due to scattering of the solder into the chip.

As a result, it is possible to realize a semiconductor device having high reliability and high yield while being resistant to the influence of the manufacturing process and the like while maintaining the moisture resistance.

FIG. 9 is a sectional view of a semiconductor device showing another embodiment of the present invention. In the figure, 1 to 6 and 5a are exactly the same as the semiconductor device of the embodiment of FIG.

FIG. 9 shows the semiconductor device of the embodiment of FIG. 1 in which an alignment mark, a vernier or a monitor element is inserted in the scribe line area, and the chip area 30 is shown. And a scribe area 31. The scribe area 3
One region 32 in which an alignment mark, a vernier, and a monitor element are formed is arranged in the inside 1.

Here, the structure of the connection region between the chip region 30 and the scribe region 31 is exactly the same as that of the semiconductor device of the embodiment shown in FIG. Further, a slit-shaped opening 33 is provided in the silicon nitride film forming at least the passivation film between the aluminum wiring layer 5 and the one region 32.

According to the structure of the above embodiment, the alignment mark, the vernier and the monitor element are the BPSG film 3
Alternatively, since it is covered with the silicon nitride film 6, in addition to the effect of the semiconductor device of the embodiment of FIG. 1, the aluminum wiring layer between the aluminum wiring layers caused by the scattering of the side wall of the aluminum wiring layer into the chip as described above is added. Problems such as wire breaks and shorts can be avoided.

Further, the aluminum wiring layer 5 and the one region 3
Since a slit-shaped opening 33 is provided in the silicon nitride film forming at least the passivation film between the two, even if a crack is generated at the scribe end during dicing, it is propagated in the chip. Can be prevented.

In FIG. 9, the slit-shaped opening 33 is provided only in the silicon nitride film, but instead of this,
The effect is further enhanced by the structure in which the silicon nitride film 6 and the BPSG film 3 are completely removed.

FIG. 2 is a sectional view of a semiconductor device showing another embodiment of the present invention. In the figure, 1 to 6 and 5a are exactly the same as the semiconductor device of the embodiment of FIG.

In FIG. 2, this semiconductor device is
On the one main surface of the semiconductor substrate 1 on which the oxide film 2 is formed,
The BPSG film 3 forming an interlayer insulating film and the aluminum wiring layer 5a are provided, and the insulating film made of the BPSG film 3 has a hole portion 4.
And a sidewall formed of a barrier metal film 7 selected from a titanium nitride film or a tungsten nitride film and a tungsten film 8 on a side surface of the opening 4 of the BPSG film 3, and the sidewall and the BPS.
The surface and the side surface of the G film 3 are covered with the aluminum wiring layer 5 and further covered with a passivation film made of a silicon nitride film 6 disposed immediately above the aluminum wiring layer 5. It has a line structure.

In the embodiment shown in FIG. 2, the barrier metal film 7 may be replaced by a laminated structure of a titanium film and a titanium nitride film in order to improve the wiring characteristics.

Next, one embodiment of a method of manufacturing the semiconductor device shown in FIG. 2 will be described with reference to FIG.

By the conventional method, the BPSG forming the field oxide film 2 and the first interlayer insulating film on one main surface of the semiconductor substrate 1 is formed.
After forming the film 3, a contact hole (not shown in FIG. 2) is formed on the BPSG film 3. This contact phone
At the same time as the formation of the scribe line,
A slit-shaped opening 4 is formed in the PSG film 3.

Next, a barrier metal film 7 made of titanium nitride, tungsten nitride, or the like is used for 200 to 10 times.
About 00Å and the tungsten film 8 is 4000-8000Å
After depositing each of them, a side wall composed of a barrier metal film 7 and a tungsten film 8 is formed on the side surface of the slit-shaped opening 4 provided in the BPSG film 3 in the scribe line groove formation region by the etch back method. To do.
Subsequently, simultaneously with the formation of the aluminum wiring layer 5a, the aluminum wiring layer 5 is formed on the surfaces and side surfaces of the sidewalls and the BPSG film 3, and then the silicon nitride film 6 is formed so as to cover the aluminum wiring layer 5.

Further, at the same time when the pad portion (not shown in FIG. 1) is opened, the B on the scribe line groove forming region is formed.
The PSG film 3 and the silicon nitride film 6 from the chip end to 2 to 20
The semiconductor device shown in FIG. 2 is obtained by selectively removing at a position of about μm.

According to the structure and the manufacturing method of the above embodiment, the semiconductor device of the embodiment of FIG. 1 has the same effect and the step difference of the scribe line groove is reduced, so that the passivation film of the passivation film is formed. At the time of photoetching, the resist film is not accumulated in the step portion, the resist film thickness becomes thicker than that in the flat portion, and the passivation film residue does not occur in the scribe line groove.

FIG. 3 is a sectional view of a semiconductor device showing another embodiment of the present invention. In the figure, 1 to 6 and 5a are exactly the same as the semiconductor device of the embodiment of FIG.

In FIG. 3, this semiconductor device is
On the one main surface of the semiconductor substrate 1 on which the oxide film 2 is formed,
The BPSG film 3 forming an interlayer insulating film and the aluminum wiring layer 5a are provided. The insulating film made of the BPSG film 3 has an opening portion (not shown in FIG. 3) in the chip and an opening size. The same and simultaneously formed opening portions 4 are provided, and a barrier metal film 9 and a tungsten film 10 made of a titanium nitride film, a tungsten nitride film or the like are provided in the opening portions 4.
A metal layer consisting of is embedded. Here, it is preferable that all the openings in the chip have the same opening size and the opening size is about 1 μm or less. Further, it has a scribe line structure in which the surface thereof is covered with an aluminum wiring layer 5 and further covered with a passivation film made of a silicon nitride film 6 disposed immediately above the aluminum wiring layer 5. .

Here, in the embodiment of FIG. 2 described above, in order to improve the wiring characteristics, the barrier metal film 7 may be replaced with a laminated structure of a titanium film or the like and a titanium nitride film or a tungsten nitride film.

The semiconductor device shown in FIG. 3 can be realized by the same manufacturing method as that of the embodiment shown in FIG.

According to the structure and the manufacturing method of the above embodiment, the semiconductor device of the embodiment of FIGS. 1 and 2 has the same effect, and the scribe line groove is occupied in comparison with the embodiment of FIG. Since the area can be reduced, the semiconductor device can be downsized.

The holes in the chip all have the same hole size, and the insulating film made of the BPSG film 3 is provided with holes 4 of the same size as in the chip and formed simultaneously. Therefore, since the workability is good, a semiconductor device with a high yield can be obtained.

FIG. 4 is a sectional view of a semiconductor device showing an embodiment in which the present invention is applied to a semiconductor device having aluminum two-layer wiring. In addition, in the figure, 1 to 6, 9, 10, and 5a
Is the same as the semiconductor device of the embodiment shown in FIG.

In FIG. 4, this semiconductor device is
The BPSG film 3 forming a first interlayer insulating film, the first aluminum wiring layer 5a, and the first aluminum wiring layers 5a and 2 on the one main surface of the semiconductor substrate 1 on which the oxide film 2 is formed. The silicon oxide film 11 forming an interlayer insulating film with the aluminum wiring layer 15a of the second layer and the aluminum wiring layer 15a of the second layer are provided.
The insulating film made of the PSG film 3 is provided with an opening portion 4 formed in the chip at the same time and having the same opening size, and the opening portion 4 is made of titanium nitride, tungsten nitride or the like. Barrier metal film 9 and tungsten film 1
A metal layer of 0 is embedded. The surface of the aluminum wiring layer 5 is covered with a silicon oxide film 11 serving as an interlayer insulating film and a silicon nitride film 6 serving as a passivation film. A scribe that is covered with a laminated film
It has a line structure.

The semiconductor device shown in FIG. 4 can be realized by a combination of a manufacturing method similar to that of the embodiment shown in FIGS. 2 and 3 and a conventional manufacturing method.

According to the structure and the manufacturing method of the above-described embodiment, the semiconductor device having the two-layer aluminum wiring has the same effects as those of the semiconductor devices of the embodiments of FIGS. 1, 2 and 3.

FIG. 5 is a sectional view of a semiconductor device showing another embodiment of the present invention. In the figure, 1-3, 6, 1
1, 5a and 15a are exactly the same as the semiconductor device of the embodiment shown in FIG.

In FIG. 5, this semiconductor device has a BPSG film 3 forming a first interlayer insulating film, a first aluminum wiring layer 5a and a second aluminum wiring layer on one main surface of a semiconductor substrate 1. A silicon oxide film 11 forming an interlayer insulating film with 15a;
An insulating film having the aluminum two-layer wiring layer and formed by stacking the BPSG film 3 and the silicon oxide film 11 is formed at the same time as a via hole (not shown in FIG. 5) in the chip. An opening 12 having the same hole size is provided, and a metal layer composed of a barrier metal film 13 and a tungsten film 14 selected from a titanium nitride film or a tungsten nitride film is embedded in the opening 12. There is. Here, it is preferable that all the openings in the chip have the same opening size and the opening size is about 1 μm or less. Further, the surface thereof is covered with an aluminum wiring layer 15 which is formed at the same time in the same layer as the second aluminum wiring layer 15a forming the wiring in the chip, and further disposed directly above the aluminum wiring layer 15. It has a scribe line structure so as to be covered with the silicon nitride film 6 forming the passivation film.

Next, one embodiment of a method of manufacturing the semiconductor device shown in FIG. 5 will be described with reference to FIG.

By the conventional method, the BPSG forming the field oxide film 2 and the first interlayer insulating film on the one main surface of the semiconductor substrate 1 is formed.
After forming the film 3, a contact hole (not shown in FIG. 1) is formed on the BPSG film 3. At this time, the BPSG
The scribe line groove is not opened in the film 3.

Next, after forming the first aluminum wiring layer 5a and the silicon oxide film 11 forming the aluminum wiring interlayer insulating film, a via hole (not shown in FIG. 5) is formed in the silicon oxide film 11. To do. When the via hole is opened, the B
A slit-shaped opening 12 having the same opening size as the via hole in the chip is formed in the insulating film formed by stacking the PSG film 3 and the silicon oxide film 11.

Further, a barrier metal film 13 made of titanium nitride, tungsten nitride, etc.
1000 Å and tungsten film 14 4000-80
After depositing each of about 00Å, the barrier metal film 7 and the tungsten film 8 are buried in the slit-shaped openings 12 provided in the insulating film in the scribe line formation region by the etch back method. Then, the aluminum wiring layer 15
Simultaneously with the formation of a, an aluminum wiring layer 15 is formed on the surfaces and side surfaces of the barrier metal film 7, the tungsten film 8 and the BPSG film 3, and then a silicon nitride film 6 is formed so as to cover the aluminum wiring layer 5.

Further, at the same time when the pad portion (not shown in FIG. 5) is opened, the B on the scribe line groove forming region is formed.
The insulating film formed of the PSG film 3 and the silicon oxide film 11 and the silicon nitride film 6 are selectively removed at a position of about 2 to 20 μm from the chip end, and the semiconductor device shown in FIG. 5 is obtained.

According to the structure and the manufacturing method of the above embodiment, the BPSG film 3 on the chip side on the scribe line is formed.
Is the second aluminum wiring layer 15 and the silicon nitride film 6
Since the BPSG film 3 is covered with the silicon nitride film 7 so that there is no part that directly contacts the outside air,
It has a structure that is blocked by moisture resistance.

Furthermore, BPSG on the scribe line
Since the film 3 is not opened at the time of opening the contact hole, the first aluminum wiring layer is formed at the end of the BPSG film 3 on the scribe line groove when the first aluminum wiring layer 4a is etched. No side wall is formed.

The BPS on the scribe line
The insulating film formed by stacking the G film 3 and the silicon oxide film 11 is opened like a slit at the time of opening the via hole. The aluminum wiring layer 1 is formed on the surface and the side surface of the opening 12.
5, the side wall of the aluminum wiring layer is not formed at the end of the insulating film on the scribe line when the aluminum wiring layer 15a is etched. Therefore, it is possible to avoid the above-mentioned problems such as disconnection and short between aluminum wiring layers due to scattering of side walls of the aluminum wiring layer into the chip.

As a result, it is possible to realize a semiconductor device having high reliability and high yield while being resistant to the influence of the manufacturing process and the like while maintaining the moisture resistance.

FIG. 6 is a sectional view of a semiconductor device showing another embodiment of the present invention. In addition, in the figure, 1 to 6 and 9 to 1
1, 15, 5a, and 15a are exactly the same as the semiconductor device of the embodiment shown in FIG.

In FIG. 6, this semiconductor device has a BPSG film 3 forming a first interlayer insulating film, a first aluminum wiring layer 5a and a second aluminum wiring layer on one main surface of a semiconductor substrate 1. A silicon oxide film 11 forming an interlayer insulating film with 15a;
An opening portion 4 having the aluminum two-layer wiring layer and having the same opening size is formed in the BPSG film 3 simultaneously with a contact hole in the chip (not shown).
A metal layer composed of a barrier metal film 9 made of a titanium nitride film, a tungsten nitride film or the like and a tungsten film 10 is embedded in the opening portion 4. Also,
The surface thereof is the aluminum wiring layer 5 and the silicon oxide film 11 forming the interlayer insulating film on the first aluminum wiring layer 5.
An opening part which is covered with the same and is formed at the same time as the via hole in the chip (not shown) on the silicon oxide film 11 immediately above the first aluminum wiring layer 5 and has the same opening size. 16 is provided, and the tungsten film 17 is embedded in the opening 16. Also, the surface is
It has a scribe line structure so as to be covered with the second aluminum wiring layer 15 and the silicon nitride film 6 forming a passivation film directly above the second aluminum wiring layer 15.

The semiconductor device shown in FIG. 6 can be realized by applying the manufacturing method of the above-mentioned embodiment.

According to the structure and the manufacturing method of the above-mentioned embodiment, the semiconductor device having the aluminum two-layer wiring has the same effect as that of the semiconductor device of the above-mentioned embodiment, and
Since the workability is better than that of the semiconductor device of the embodiment shown in FIG. 5, a semiconductor device with high yield can be obtained.

FIG. 7 is a sectional view of a semiconductor device showing another embodiment of the present invention. In the figure, reference numerals are exactly the same as those of the semiconductor device of the embodiment shown in FIG.

In this semiconductor device, a diffusion layer 17 is provided in one region of the semiconductor substrate 1 in the scribe region in addition to the same structure as that of the embodiment shown in FIG. Via the tungsten film 10 and the aluminum wiring layer 5, it is connected to a metal wiring layer in the chip having a constant potential such as a power supply potential or a ground potential.

According to the structure of the above-described embodiment, in addition to the same effect as the above-mentioned semiconductor device, the scribe line can be held at a constant potential, so that the element in the chip is shielded from disturbance such as external noise. Since it is possible to prevent the influence on the elements in the chip and the intrusion of interfering impurities such as sodium ions into the chip, a semiconductor device having high reliability can be realized.

By the way, in the above-described embodiment, the case where the passivation film does not completely cover the inter-layer insulating film below it in the opening of the passivation film on the scribe line is described. However, instead of this, the passivation film may completely cover the interlayer insulating film below it.

In the above embodiment, the silicon nitride film is used as the passivation film.
Instead of this, the present invention is also effective when a passivation film made of a laminated film containing at least a silicon nitride film is used.

In the above embodiment, the interlayer insulating film is B
Although the case of using the PSG film has been described, the present invention is also effective in the case of using an interlayer insulating film including at least a high-concentration PSG film or a BPSG film instead.

Further, although the above-mentioned embodiment describes the case of the semiconductor device having the aluminum two-layer wiring layer, it is replaced with the aluminum three-layer wiring layer or more or two or more metal wiring layers other than the aluminum wiring layer. The present invention is also effective in the case of a semiconductor device.

Although the present invention has been described above based on the embodiments, it is needless to say that the present invention is not limited to the above embodiments and various modifications can be made without departing from the spirit of the invention.

[0082]

As described above, according to the semiconductor device of the present invention, at least the chip-side interlayer insulating film on the scribe line has no portion that is in direct contact with the outside air due to the metal wiring layer and the silicon nitride film. As described above, the structure has moisture resistance.

Furthermore, since the surface and the side surface of the interlayer insulating film on the scribe line are covered with the metal wiring layer,
Even when the metal wiring layer is etched, the side wall of the metal wiring layer is not formed at the end of the interlayer insulating film on the scribe line groove, so problems such as disconnection or short between metal wiring layers are avoided. it can.

As a result, it is possible to realize a semiconductor device having high reliability and high yield while being resistant to the influence of the manufacturing process and the like while maintaining the moisture resistance.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 3 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 4 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 5 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 6 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 7 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 8 is a cross-sectional view showing a manufacturing process of a conventional semiconductor device.

FIG. 9 is a cross-sectional view showing another embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

1 Silicon Substrate 2 Field Oxide Film 3 BPSG Film 4 Opening Portion of BPSG Film 5, 5a, 15, 15a Aluminum Wiring Layer 6 Silicon Nitride Film 7, 9, 13 Barrier Metal Film 8 Sidewalls 10 and 14 Made of Tungsten Film , 17 Tungsten film 11 Silicon dioxide film 12 Opening part of BPSG film and silicon dioxide film 16 Opening part of silicon dioxide film 17 Diffusion layer 20 Sidewall of aluminum wiring layer 21 Egret of silicon substrate 30 Chip area 31 Scribing area 32 One area where alignment mark, vernier and monitor element are formed 33 Opening part of silicon nitride film

Claims (10)

[Claims] 1. A semiconductor device comprising a plurality of interlayer insulating films and a metal wiring layer on one main surface of a semiconductor substrate, wherein the interlayer insulating film is provided with an opening, and the opening of the insulating film is provided. A semiconductor device having a scribe line structure in which at least a surface and a side surface of the are covered with the metal wiring layer and a passivation film on the metal wiring layer. 2. A semiconductor device comprising a plurality of interlayer insulating films and a metal wiring layer on one main surface of a semiconductor substrate, wherein the interlayer insulating film is provided with an opening, and the opening of the insulating film is formed. Has a side wall formed of at least a metal layer, and the side wall and the surface of the insulating film are covered with the metal wiring layer and a passivation film on the metal wiring layer. A semiconductor device comprising: 3. A semiconductor device comprising a plurality of interlayer insulating films and at least two or more metal wiring layers on one main surface of a semiconductor substrate, wherein an insulating film formed by stacking the plurality of interlayer insulating films is opened. A scribe is provided in which a hole is provided, and at least the surface and the side surface of the opening of the insulating film are covered with the uppermost metal wiring layer of the metal wiring layer and the passivation film directly above the metal wiring layer. A semiconductor device having a line structure. 4. A semiconductor device comprising a plurality of interlayer insulating films and at least two or more metal wiring layers on one main surface of a semiconductor substrate, wherein the first interlayer insulating film is provided with an opening, At least the surface and the side surface of the opening of the first interlayer insulating film are covered with the first metal wiring layer and the second interlayer insulating film directly above the first metal wiring layer, and further above the first metal wiring layer. An opening is provided in the second interlayer insulating film, and at least the surface and the side surface of the opening of the second interlayer insulating film are the second metal wiring layer and the third interlayer insulation immediately above the second metal wiring layer. A semiconductor device having a scribe line structure in which a structure covered with a film is sequentially repeated so that an uppermost metal wiring layer is covered with a passivation film. 5. The opening size of the opening portion of the interlayer insulating film is the same as the opening size of the opening portions simultaneously formed in the chip. The semiconductor device according to claim 3 or claim 4. 6. The semiconductor device according to claim 5, wherein a metal layer is embedded in the opening of the interlayer insulating film. 7. The metal wiring layer is connected to the metal wiring layer in a chip having a constant potential, claim 1, claim 2, claim 3, claim 4, claim 5. And the semiconductor device according to claim 6. 8. A region in which an alignment mark, a vernier and a monitor element are formed is arranged in the scribe line region, and at least the passivation film between the metal wiring layer and the region is formed. An opening part is provided, Claim 1, Claim 2,
The semiconductor device according to claim 3, claim 4, claim 5, claim 6, or claim 7. 9. The passivation film is selected from a silicon nitride film or a laminated film containing at least a silicon nitride film, claim 1, claim 2, claim 3, claim 4. The semiconductor device according to claim 5, claim 6, claim 7, or claim 8. 10. The interlayer insulating film comprises at least a high concentration phosphorus glass film or a boron phosphorus glass film, claim 1, claim 2, claim 3, claim 4, claim 4. The semiconductor device according to claim 5, claim 6, claim 7, claim 8, and claim 9.