JPH06177126A - Formation of multilayer thin film - Google Patents

Abstract

PURPOSE:To eliminate defective insulation or wiring by making a recess on the surface of a substrate made of a dielectric material and forming a conductive film therein. CONSTITUTION:A photomask having predetermined pattern is applied on a resist film 21 which is then exposed and developed using photolithographic technology thus forming a resist film 21a of predetermined pattern. The resist film 21a is subsequently removed to make a recess 22A in a dielectric film 22. A conductive film 23 is then formed in the recess 22A thus completing a multilayer thin film 25. This method allows easy formation of a multilayer thin film in which a conductor is formed on an insulating substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thin film laminate in a semiconductor manufacturing process or the like.

[0002]

2. Description of the Related Art A thin film laminating technique including a semiconductor process is utilized in many fields and is an essential technique for forming various elements. In particular, in the semiconductor process and the like, the progress of the thin film laminating technique has been remarkable as the film is made thinner and smaller.

For example, FIG. 16 shows a configuration example of an equivalent circuit of an active matrix liquid crystal display device using thin film transistors as switching elements. 16, a large number of scanning electrodes G1, G2, ..., and G _n, a number of the signal electrode lines S1, S2, ..., and a S _m are wired in a matrix, each scanning electrode line G are each scan circuits A , Each signal electrode line S is connected to a signal supply circuit B, and a thin film transistor (switch element) α is provided near the intersection of each line.
The liquid crystal element 19 is connected to the drain of the thin film transistor α to form a circuit.

In the circuit shown in FIG. 16, the scan electrode G
1, G2, ..., G _n are sequentially scanned to form one scan electrode line G.
All the above thin film transistors α are simultaneously turned on, and in synchronization with this scanning, the capacitors connected to the thin film transistor α in the on state from the signal supply circuit B via the signal electrode lines S1, S2, ..., S _m . The signal charge is stored in the capacitance portion 18 of the portion 18 corresponding to the liquid crystal element 19 to be displayed. The accumulated signal charges continue to excite the corresponding liquid crystal element 19 until the next scan in which the thin film transistor α is in the off state.
Is controlled and displayed by the control signal. That is, by performing such driving, each liquid crystal element 19 is statically driven even if the external driving circuits A and B are time-division driven.

FIG. 13 shows an example of the structure of the conventional active matrix liquid crystal display device shown in the equivalent circuit of FIG. 16 in which parts such as the scanning electrode lines G and the signal electrode lines S are provided on the substrate. is there. In the active matrix display device shown in FIG. 13, the scanning electrode lines G and the signal electrode lines S are arranged in a matrix on the transparent substrate 1 made of glass or the like at the intersections of the scanning electrode lines G and the signal electrode lines S with the insulating layer 4 interposed therebetween. Further, a thin film transistor α is provided near the intersection of the scanning electrode line G and the signal electrode line S.

The thin film transistor α shown in FIG. 13 has the most general structure. An insulating layer 4 is provided on the gate electrode 2 which is provided so as to extend from the scanning electrode G, and an amorphous silicon (a) is formed on the insulating layer 4. A semiconductor layer 7 made of —Si) is provided, and a source electrode 9a and a drain electrode 9b made of aluminum or the like are provided on the semiconductor layer 7 so as to face each other. The uppermost layer of the semiconductor layer 7 is a semiconductor layer 6 such as ion-doped amorphous silicon, and the thin film transistor α shown in FIG. 13 has a structure generally called a channel etch type.

The drain electrode 9b is formed of the insulating layer 4
The source electrode 9a is connected to the pixel electrode 3 formed on the substrate 1 through a contact hole 8B formed in the substrate 1, and the source electrode 9a is connected to the signal electrode line S. Also,
A channel portion β is formed by the lower semiconductor layer 7 between the source electrode 9a and the drain electrode 9a which face each other. Then, a passivation layer 100 is provided on the insulating layer 4, the source electrode 9a, the drain electrode 9b, etc., and an alignment film 101 is formed on the passivation layer 100. A transparent substrate 103 having a film 102 is provided, and a liquid crystal 104 is further enclosed between the alignment films 101 and 102 to form an active matrix liquid crystal display device, and the pixel electrode 3 is a molecule of the liquid crystal 104. When an electric field is applied, the alignment of liquid crystal molecules can be controlled. In FIG. 13, the reference numeral 105 indicates the substrate 10.
3 is a black mask attached to the bottom surface side of 3.

FIG. 14 is an enlarged view of a main part of the thin film transistor α portion in the active matrix liquid crystal display device having the above structure. To manufacture the thin film transistor α, first, as shown in FIG. ,
A gate electrode 2 made of P (phosphorus) or B (boron) -doped polycrystalline silicon or a low resistance metal such as Cr, Mo, or Ti is formed on a substrate 1 made of an insulator such as low melting point glass. Next, as shown in FIG. 15B, a transparent conductive film (hereinafter abbreviated as ITO film) 3a made of indium and tin oxide is formed thereon. After that, the ITO film 3a is formed by photolithography.
The pixel electrode 3 (lower electrode) is formed by molding into the shape shown in FIG. At this time, as the etchant, a mixture of hydrochloric acid and nitric acid is usually used.

Then, an insulating film 4 is formed thereon as shown in FIG. 15 (d). The insulating film 4 is formed by coating the gate electrode 2 with SiO ₂ (silicon oxide), Si ₃ N ₄ (silicon nitride), or the like. Next, this insulating film 4
An a-Si layer 5 and an n ⁺ a-Si layer 6 which form the semiconductor layer 7 of the thin film transistor α are formed on the above. Then, a resist is applied to this surface, and after this is exposed to light and developed, the a-Si layer 5 and the n ⁺ a-Si layer 6 are subjected to an etching treatment to form a semiconductor layer 7 as shown in FIG. To form.

Thereafter, a contact hole 8 having a size of about 20 μm square and a depth of about several thousand Å reaching the pixel electrode 3 is formed in the insulating film 4 on the pixel electrode 3 as shown in FIG. Form. Then, in order to fill the inside of the contact hole 8 with the conductive material 8B made of Al or the like, as shown in FIG.
As shown in FIG. 5 (g), after forming the conductive material 8B by sputtering or the like, an unnecessary portion is removed by etching to obtain a shape as shown in FIG. 15 (h). Next, FIG.
As shown in (i), a conductor film 9 made of a metal material having a small resistance value such as Al (aluminum) or Cr (chrome) is coated thereon. Then, the conductor film 9 is patterned by using a photolithography technique to form a source electrode 9a and a drain electrode 9b. Then, the n ⁺ a-Si layer 6 is etched using the source electrode 9a and the drain electrode 9b as a mask to form a channel portion β. Therefore, the drain electrode 9b is formed by the contact material 8 filled inside the contact hole 8.
The structure is such that it is connected to the pixel electrode 3 via B.

[0011]

Therefore, in the thin film transistor manufactured by the above method, the insulating layer 4 is formed so as to cover the upper surface of the substrate 1 and the gate electrode 2, and thus the upper surface of the gate electrode 2 is covered. Insulating layer 4 laminated on
Will be laminated along the shape of the convex portion of the gate electrode 2. Therefore, it is difficult to form the insulating layer 4 having a constant film thickness on the surface of the convex-shaped gate electrode 2 formed by the process shown in FIG.
As shown in FIG. 7, the corners 4a and 4b of the gate electrode 2 are
Etc., the insulating layer 4 laminated thereon becomes extremely thin, or is not formed at all (disconnection phenomenon) as shown in FIG. 18, and the gate electrode 2 and the source electrode 9a are not formed.
Between the source electrode 9a and the source electrode 9a.
Had a problem of causing a disconnection.

Therefore, in order to avoid the above problems, a liquid crystal substrate having a structure in which a gate electrode 12 is embedded in the substrate 10 as shown in FIG. 12 is disclosed in JP-A-1-170048. . In the liquid crystal substrate having the structure shown in FIG. 12, since the gate electrode 12 is embedded in the substrate 10, the laminated film laminated on this surface is formed to have a desired constant film thickness. It is possible to reliably prevent film formation failure of the laminated film on the surface of the gate electrode, which is caused by the gate electrode protrudingly formed on the substrate as in the conventional case, and to prevent insulation failure caused by the film formation failure. It is possible to avoid wiring defects and the like.

On the other hand, the present inventor has conducted intensive studies to avoid the problems of the disconnection phenomenon and the insulation failure, and as a result, has invented a new method for producing a thin film laminate capable of avoiding these problems. It was Therefore, the present invention has been made in view of the above circumstances, and provides a method for forming a thin film laminate in which a conductive film is embedded in an insulating film, wherein each laminated film formed on the substrate and the conductive film is uniform. It is an object of the present invention to provide a method for forming a thin film laminated body which can be formed with a desired film thickness and has a high yield. In addition, such a thin film laminate is shown in FIG.
When applied to a semiconductor device such as a liquid crystal substrate shown in 6, it is possible to form an insulating film, an active layer, and a conductive film having a uniform film thickness on the thin film laminate, resulting in insulation failure and wiring failure. It is an object of the present invention to provide a method for easily forming the above-mentioned thin film laminate, which can prevent the occurrence of the above problems and can reduce the manufacturing cost of the semiconductor device.

[0014]

In order to solve the above-mentioned problems, in the method for forming a thin film laminate according to claim 1, a resist film having a predetermined pattern is formed on at least the surface of an insulating substrate. Forming a recess in the insulating film by forming an insulating film on the surface of the substrate including or not on the resist film and then removing the resist film, and forming a conductive film in the recess. It is characterized by.

In order to solve the above-mentioned problems, in the method for forming a thin film laminate according to a second aspect of the present invention, at least the surface of an insulating substrate is subjected to an activation treatment for electroless plating and an activation treatment. After forming the surface, a resist film having a predetermined pattern is formed on the activation-treated surface, and then an insulating film is formed on the surface of the substrate including or not on the resist film to form the resist film. By removing the insulating film, a recess whose bottom portion becomes the activation surface is formed, and a conductive film is selectively formed only in this recess by electroless plating. .

In order to solve the above-mentioned problems, the method for forming a thin film laminate according to a third aspect of the present invention forms a first conductive film on the surface of a substrate having at least an insulating surface, and forms the first conductive film. A resist film having a predetermined pattern is formed on the film, then the first conductive film is appropriately removed using the resist film as a mask, and the first film is formed on the surface of the substrate including or not on the resist film. After forming an insulating film with a thickness thicker than that of the conductive film, the resist film is removed, and a recess whose bottom portion is the first conductive film is formed in the insulating film. It is characterized in that the second conductive film is selectively formed only on the conductive film.

According to a fourth aspect of the present invention, in order to solve the above-mentioned problems, an insulating film is formed on a surface of a substrate, and a resist film having a predetermined pattern is formed on the insulating film. The resist film is used as a mask to form a recess in the insulating film whose bottom is the substrate, a first conductive film is formed on the recess and the resist film, and the resist film is removed to form the resist. The first conductive film formed on the film is removed, and the second conductive film is selectively formed on the first conductive film formed in the recess. .

[0018]

According to the present invention, a thin film laminate can be easily formed by providing a recess in an insulating film provided on the surface of a substrate having at least an insulating surface by the above process and forming a conductive film in the recess. You can And when forming a laminated film on this thin film laminated body, it is possible to form with a uniform film thickness, and the yield of the thin film constituting body formed by forming the laminated film on the thin film laminated body, Very good. Therefore, when the thin film laminate having the above structure is applied to a thin film transistor or the like, the insulating film and the conductive film formed on the thin film laminate can be formed with a uniform film thickness,
The electric insulation between the conductive films is good, and it is possible to prevent the occurrence of insulation failure, wiring failure, etc., and contribute to the improvement of the yield of the thin film transistor.

[0019]

EXAMPLES Examples of the method for forming a thin film laminate of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 is a diagram showing a process of forming a thin film laminate 25 of the present embodiment 1. First, as shown in FIG. 1A, a resist film 21 is formed on the surface of a substrate 20 having an insulating surface.
To form. Then, the resist film 21 having a predetermined shape is covered by a photolithography technique by a photolithography technique, and the resist film 21 having a predetermined shape as shown in FIG.
a is formed. Next, as shown in FIG. 1C, an insulating film 22 is formed on the insulating substrate 20.

After that, the resist film 21a is removed to form a recess 22A in the insulating film 22 as shown in FIG. 1 (d). Then, by forming the conductive film 23 in the recess 22A, the thin film stack 25 of Example 1 as shown in FIG. 1E is completed.

Therefore, the thin film laminated body 2 of the first embodiment described above.
Manufacturing Example 1 of Thin Film Laminate Produced by Forming Method 5
A method of forming the above will be described with reference to FIG. (Manufacturing Example 1) First, as shown in FIG. 2A, a resist film 27 made of polymethylmethacrylate (hereinafter referred to as PMMA) having a film thickness of 1 μm is formed on the surface of a glass substrate 26.
(OFPR800: manufactured by Tokyo Ohka Co., Ltd.) was applied. Then
In order to form the resist film 27 into a predetermined pattern, a photomask having a predetermined shape is cut on the resist film 27 using a photolithography technique, and the resist film 27 is exposed and then developed, as shown in FIG. A resist film 27a having a predetermined shape as shown in b) was formed. Further, a coating solution comprising silicon tetraethoxide (Si (OC ₂ H ₅ ) ₄ ), acetic acid, H ₂ O and HCl is spin-coated on the glass substrate 26 and the resist film 27 a to form a SOG (Spin- on-Glas
s) After forming the film 28 as shown in FIG.
Heat treatment was performed at 0 ° C.

Then, the resist film 27a is covered with H ₂ SO ₄
And H ₂ O ₂ are mixed at a ratio of 1: 4 to remove the SOG film 28 formed on the resist film 27a by lift-off. As shown in FIG. A recess 28A was formed in the SOG film 28 formed on the surface. After that, in order to perform plating on this, a surface treatment as shown in FIG. 2 (e) was applied by an activation treatment liquid (TMP sensitizer and TMP activator: manufactured by Okuno Seiyaku Co., Ltd.), and exposed on the bottom surface of the recess 28A. The activation treatment surface 29 was formed on the glass substrate 28A and the SOG film which was heat-treated as described above. Next, as shown in FIG. 2F, a Ni-P film 30 (TMP chemical nickel: manufactured by Okuno Seiyaku Co., Ltd.) was formed on the activation-treated surface 29 by electroless plating, and was formed in a portion other than the recess 28A. The Ni-P film 30 is removed by polishing, the conductive film 30 made of the Ni-P film is formed only in the recess 28A, and the thin film laminate 31 of Production Example 1 as shown in FIG.
Was completed.

Further, in the first manufacturing example, the insulating film on the resist film 27a is formed by the heat treatment SOG method, but instead of this SOG method, LPD (Liquid Phase Deposal) is used.
ition) method, a method of forming a thin film laminate when the insulating film is formed will be described below as Manufacturing Example 2 with reference to FIG. (Production Example 2) First, as shown in 3 (a), a resist film 27 (OFPR800: manufactured by Tokyo Ohka Co., Ltd.) made of PMMA and having a film thickness of 1 μm was applied on the surface of the glass substrate 26. Next, in order to form the resist film 27 in a predetermined pattern, a photomask having a predetermined shape is cut over the resist film 27 by using a photolithography technique, and the resist film 27 is exposed and then developed. 3 (b)
A resist film 27a having a predetermined shape as shown in FIG.
Further, on the glass substrate 26, LPD (Liquid
The SiO ₂ film 68 is formed by the phase deposition method as shown in FIG.
It was formed as shown in (c).

The SiO ₂ film 68 is formed by the LPD method.
It was carried out in the usual way as follows. A 47% hydrofluoric acid aqueous solution was put into a liquid circulating water tank, SiO ₂ powder having a saturated solubility or higher was added, and the mixture was left to circulate for 24 hours while stirring. afterwards,
The glass substrate 26 is immersed in this liquid circulating water tank, aluminum particles are added as a reaction initiator,
SiO ₂ was grown only on top. The deposition rate was about 1 Å / min on the glass substrate 26, but it was not deposited on the resist film 27a at all, and an optical microscope observation showed that a good quality film without defects was formed.

Then, the resist film 27a is covered with H ₂ SO ₄
By removing the H ₂ O and H ₂ O with a treatment liquid mixed at a ratio of 1: 4, a recess 68 A was formed in the SiO ₂ film 68 formed on the surface of the glass substrate as shown in FIG. 3D. After that, an activation treatment liquid (TMP sensitizer and TMP activator: manufactured by Okuno Seiyaku Co., Ltd.) is used to perform a surface treatment as shown in FIG. 3 (e), and exposed on the bottom surface of the recess 68A. The activation-treated surface 29 was formed on the glass substrate and the SiO ₂ film 68.
Then, as shown in FIG. 3F, the activation surface 2
Ni-P film 30 (TMP chemical nickel: manufactured by Okuno Seiyaku Co., Ltd.) is formed on 9 by electroless plating, and Ni-P film 30 formed in other than the recess 68A is removed by polishing,
Conductive film 3 made of the Ni-P film only in the recess 68A
0 was formed to complete the thin film laminate 69 of Production Example 2 as shown in FIG.

Further, a method of forming the thin film laminate of Example 2 will be described with reference to FIG. (Embodiment 2) First, as shown in FIG. 4A, an activation treatment for plating is applied to the surface of the substrate 32 having an insulating surface to form an activation treatment surface 33. Then, a resist film 34 is formed on the activation surface 33 as shown in FIG. Then, a photomask in which a predetermined shape is cut is covered on the resist film 34 by a photolithography technique, and the resist film 34 is exposed to light and then developed, as shown in FIG.
A resist film 34a having a predetermined shape as shown in (c) is formed. Further, an insulating film 35 is formed thereon as shown in FIG. 4 (d), the resist film 34a is removed, and the insulation formed on the insulating substrate 32 as shown in FIG. 4 (e). A recess 35A is formed in the film 35, and the activation surface 33 is exposed on the bottom surface of the recess 35A. Then, after that, as shown in FIG.
The conductive film 36 is selectively formed only in the recess 35A to complete the thin film stack 37 of the second embodiment.

Next, a method of forming the thin film laminate of Manufacturing Example 3 formed by using the method of forming the thin film laminate 37 in Example 2 described above will be described with reference to FIG. (Production Example 3) As shown in FIG. 5A, the glass substrate 38 surface is subjected to an activation treatment for plating with an activation treatment liquid (IPC Accelerator: Okuno Seiyaku) to form an activation treatment surface 39. did. Then, as shown in FIG. 5B, a resist film (OFPR800: made by Tokyo Ohka Co., Ltd.) 40 made of PMMA having a film thickness of 1 μm was applied on the activation treated surface 39. Then, a photomask having a predetermined shape was covered on the resist film 40 by a photolithography technique, which was exposed and then developed to form a resist film 40a having a predetermined shape as shown in FIG. 5C. Then, as shown in FIG. 5D, a SiO ₂ film 41 was formed thereon by vapor deposition using an ion beam gun to react with O ₂ gas.

After that, the resist film 40a is covered with H ₂ SO ₄
The and H ₂ O ₂ 1: removed by the treatment liquid in a mixing ratio of 4, the Si of the was formed on the resist film 40a
The O ₂ film 41 is lifted off, and the surface of the SiO ₂ film 41 formed on the glass substrate 38 is removed as shown in FIG.
While forming the recess 41A, the activation treatment surface 39 was exposed on the bottom surface of the recess 41A. Then, electroless plating is performed, and only in the recess 41A, as shown in FIG. 5 (f), a Cu film 42 (OPC copper T: manufactured by Okuno Seiyaku) is used.
Was formed to complete the thin film laminate 43 of Production Example 2. In addition, it goes without saying that the method of forming a thin film laminate in which the insulating film is formed by using the LPD method shown in the second manufacturing example of the first embodiment can be applied to the third manufacturing example.

Further, a method of forming the thin film laminate of Example 3 will be described with reference to FIG. (Embodiment 3) As shown in FIG. 6A, a conductive film 45 is formed on the surface of an insulating substrate 44. Next, a resist film 46 is formed on the surface of the substrate 44 as shown in FIG. After that, the resist film 46 is covered with a photomask having a predetermined shape by using a photolithography technique, and the resist film 46 is exposed and then developed as shown in FIG. 6C.
A resist film 46a having a predetermined shape as shown in is formed.
Then, using the resist film 46a as a mask, as shown in FIG.
As shown in (d), the conductive film 45 is appropriately removed. Next, as shown in FIG. 6E, an insulating film 47 is formed thereon with a film thickness thicker than that of the conductive film 45. After that, FIG.
As shown in (f), the insulating film 47 formed on the insulating substrate 44 by removing the resist film 46a.
Then, the recess 47A is formed. Then, as shown in FIG. 6G, the conductive film 48 is selectively formed only on the conductive film 45 in the recess 47A to complete the thin film stack 49 of the third embodiment.

Then, a method of forming the thin film laminate of Production Example 4 manufactured by the method of forming the thin film laminate 49 of Example 3 will be described with reference to FIG. (Manufacturing Example 4) As shown in FIG.
ITO as the first conductive film on the surface by the sputtering method
A (indium tin oxide) film 51 was formed. Then, as shown in FIG. 7B, a resist film (OFPR80) made of PMMA having a film thickness of 1 μm is formed on the ITO film 51.
0: manufactured by Tokyo Ohka Co., Ltd.) 52 was applied. After that, the resist film 52 is covered with a photomask having a predetermined shape by using a photolithography technique, exposed, and then developed to form a resist film 52a having a predetermined shape as shown in FIG. 7C. . Then, using the resist film 52a as a mask, as shown in FIG.
1 was appropriately removed.

Then, as shown in FIG. 7 (e), a SiO ₂ film 53 having a thickness larger than that of the ITO film 51 was formed by an evaporation method using an ion beam gun while reacting with O ₂ by evaporation. Then, the resist film 52a is replaced with H ₂
The treatment liquid in which SO ₄ and H ₂ O ₂ are mixed at a ratio of 1: 4 is removed, and the SiO ₂ film 53 formed on the resist film 52a is lifted off, as shown in FIG. SiO ₂ film 5 formed on the surface of glass substrate 50
A concave portion 53A was formed in No. 3. And CuSO ₄ · 5H ₂
Electroplating was performed using a plating solution in which O was mixed at 250 g / l and H ₂ SO ₄ was mixed at 50 g / l. As shown in FIG. 7 (g), the second conductive film was formed only on the ITO film 51 of the recess 53A. A Cu film 54 (OPC Kappa-T: made by Okuno Seiyaku Co., Ltd.) was formed as a film by selective growth to complete a thin film laminate 55 of Production Example 4. In this Production Example 4, the ITO film was used as the first conductive film, but the material of this first conductive film is not limited to this, and needless to say, various metals can be appropriately applied.

Also, unlike the above-mentioned Production Example 4, a method for producing a thin film laminate in Production Example 5 in which a Ni film is formed on the second conductive film formed on the ITO film of the first conductive film will be described. This will be described below with reference to FIG. (Manufacturing Example 5) As shown in FIG. 7A, a glass substrate 50
ITO as a first conductive layer on the surface by sputtering
A (indium tin oxide) film 51 was formed. Then, as shown in FIG. 7B, a resist film (OFPR80) made of PMMA having a film thickness of 1 μm is formed on the ITO film 51.
0: manufactured by Tokyo Ohka Co., Ltd.) 52 was applied. After that, the resist film 52 is covered with a photomask having a predetermined shape by using a photolithography technique, exposed, and then developed to form a resist film 52a having a predetermined shape as shown in FIG. 7C. . Then, using the resist film 52a as a mask, as shown in FIG.
1 was appropriately removed.

Then, as shown in FIG. 7E, a SiO ₂ film 5 having a thickness larger than that of the ITO film 51 is formed by an evaporation method using an ion beam gun while reacting with O ₂ by evaporation.
3 was deposited. Then, the resist film 52a is covered with H ₂ S.
The S ₄ formed on the resist film 52a is removed by a treatment liquid in which O ₄ and H ₂ O are mixed at a ratio of 1: 4.
The iO ₂ film 53 was lifted off, and a recess 53A was formed in the SiO ₂ film 53 formed on the surface of the glass substrate 50 as shown in FIG. 7 (f). Then, electroless nickel plating is performed, and as shown in FIG. 7G, a conductive film 54 'is formed as a second conductive layer only on the ITO film 51 of the recess 53A.
(ITO 90 top nicolon: manufactured by Okuno Seiyaku Co., Ltd.) was formed by selective growth to complete a thin film laminate 55 ′ of Production Example 6.

In Production Example 5, ITO is used as the first conductive layer.
A conductive film 54 'was selectively deposited by using the film,
Even if nickel is used as the first conductive layer, nickel can be selectively deposited and formed as the second conductive layer in the recess 53A. (ICP Top Nicoron USD: manufactured by Okuno Seiyaku).

Further, unlike the above Production Examples 4 and 5, the method for producing a thin film laminate in Production Example 6 in which a W film is used for the first conductive layer and the second conductive film will be described with reference to FIG. While explaining. (Manufacturing Example 6) First, as shown in FIG. 8A, a W film 57 was formed on a glass substrate 56 by a sputtering method. Then, a film thickness of 1 μm as shown in FIG. 8B is formed on the W film 57.
A resist film (OFPR800: made by Tokyo Ohka) 58 made of PMMA of m was applied. Then, the resist film 5
8 is covered with a photomask having a predetermined shape by using a photolithography technique, exposed, and developed to form a resist film 58 having a predetermined shape as shown in FIG. 8C.
a was formed. Then, using the resist film 58a as a mask, the W film 57 was appropriately removed as shown in FIG. Then, as shown in FIG. 8E, a SiO ₂ film 59 was formed with a thickness larger than that of the W film 57 by the LPD method. Then, the resist film 58a is covered with H ₂ SO ₄ and H ₂ O ₂
Was removed by the treatment liquid mixed at a ratio of 1: 4, and FIG.
As shown in (f), a recess 59A was formed on the surface of the SiO ₂ film 59 formed on the surface of the glass substrate 56. Then, thereafter, the W film 5 in the recess 59A is formed by a selective CVD method.
A second conductive film was formed only on 7 by selectively growing an Al film 60 to complete a thin film laminate 61 of Production Example 6 as shown in FIG. 8 (g). In Production Example 6, W was used as the first conductive film and Al was used as the second conductive film.
The material that can be appropriately used is not limited to this, and various materials can be used.

Further, a method for forming the thin film laminate of Example 4 will be described with reference to FIG. (Embodiment 4) As shown in FIG. 9A, an insulating film 71 is formed on the surface of the substrate 70. Then, a resist film is formed on the surface of the insulating film 71. After that, the resist film 72 is covered with a photomask having a predetermined shape by using a photolithography technique, exposed to light, and then developed to form a resist film 72a having a predetermined shape as shown in FIG. 9B.
To form. Then, using the resist film 72a as a mask, the insulating film 71 is appropriately removed as shown in FIG. 9C to form a recess 71 in which the substrate is exposed at the bottom.
A is formed. Next, as shown in FIG. 9D, a first conductive film 73 is formed on the resist film 72a and the recess 71A. Then, as shown in FIG. 9E, the resist film 72a is removed, and only the first conductive film 73 in the recess 71A formed in the insulating film 71 is selectively removed.
By forming the second conductive film 74, the thin film stack 75 of the fourth embodiment is completed.

Then, a method of forming the thin film laminate of Production Example 7 manufactured by the method of forming the thin film laminate 75 of Example 4 will be described with reference to FIG. (Production Example 7) As shown in FIG.
A silicon oxide film 81 was formed as an insulating film on the surface 0 by vapor deposition. Then, a resist film (OFPR8 of PMMA having a thickness of 1 μm) is formed on the silicon oxide film 81.
00: manufactured by Tokyo Ohka). Then, the resist film is covered with a photomask having a predetermined shape by using a photolithography technique, and the resist film 8 having a predetermined shape as shown in FIG.
2a was formed. Subsequently, using the resist film 82a as a mask, the silicon oxide film 81 is appropriately removed as shown in FIG. 10C to form a recess 82A formed in the insulating film 81 formed on the substrate 80. At the same time, the substrate 80 was exposed on the bottom surface of the recess 82A.

Next, as shown in FIG. 10D, an ITO film 83 is formed on the resist film 82a and the bottom surface of the recess 82A by a sputtering method. Then, FIG.
As shown in (e), the ITO film 83 was appropriately removed using the resist film 82a as a mask. Then, electroless nickel plating is performed to form a conductive film 84 (ITO 9) as a second conductive layer only on the ITO film 83 of the recess 83A.
0 top nicolon: manufactured by Okuno Seiyaku Co., Ltd.) to form a thin film laminate 85 of Production Example 7.

In Production Example 7, ITO is used as the first conductive layer.
The second conductive film 84 was selectively deposited by using the film, but even if nickel is used as the first conductive layer, nickel is selectively deposited as the second conductive layer in the recess 82A by electroless nickel plating. Can be formed. (ICP Top Nicoron USD: manufactured by Okuno Seiyaku). Further, even when an ITO film or a metal other than Ni is used for the first conductive layer, various metals are selectively deposited as a second conductive film in the recess 82A by electrolytic plating or a selective CVD method. It goes without saying that it is possible to do so. Further, as a method of forming the insulating film 81 in Production Example 7, it is needless to say that the LPD method, the heat treatment SOG method or the like can be appropriately used in addition to the vapor deposition method.

As described above, Examples 1 to 4 and Production Example 1
-As shown in Production Example 7, the recesses 22A, 28A, 35A, 41A are formed on the substrate made of a material having an insulating surface.
47A, 53A, 59A, 68A, 71A, 82A are provided, and the recesses 22A, 28A, 35A, 41A, 47 are provided.
A, 53A, 59A, 71A, 68A, 82A, and conductive films 23, 30, 36, 42, 48, 54, 54 ', 6
By embedding 0, 74, 84, the thin film stack 25,
31, 37, 43, 49, 55, 55 ', 61, 75,
69 and 85 can be easily formed.

Particularly, as described above, the concave portions 22A, 28A, 35A, 41A, 4 are formed on the substrate whose surface is made of an insulating material.
When general etching is used to form 7A, 53A, 59A, 68A, 71A, and 82A, a side-etched portion S having a width a as shown in FIG. Although it was difficult to process, by using a resist instead of the general etching, the recesses 22A, 28A, 35A, 41A, 47A, 53 are formed.
A, 59A, 68A, 71A, 82A can be precisely designed with predetermined dimensions. Furthermore, in the method for forming a thin film laminate according to the method of the present invention, as shown in the above Production Examples 1 to 7, the substrate material and the recess 28 are used.
A, 41A, 53A, 59A, 68A, 71A, 82A
Conductors 30, 42, 54, 54 ', 6 formed therein
The materials such as 0, 74, and 84 are not limited, and various materials can be selected according to a wide range of applications, and it is easy to form the concave portion having a precise dimension on the substrate as described above.

Therefore, when a laminated film is formed on the thin film laminated body manufactured by the above-described forming method, the laminated film can be formed with a uniform film thickness and the laminated film is formed on the thin film laminated body. The yield of the thin film structure constituted by the above becomes very good. Therefore, the thin film laminated body as described above can be applied to a semiconductor process or the like in which the thin film forming technique is a key technology. For example, when the thin film laminated body is applied to a liquid crystal substrate or the like, the insulating film and the conductive film formed on the thin film laminated body can be formed with a uniform film thickness, and good electrical conductivity can be provided between the conductive films. It has an insulating property and can prevent the occurrence of insulation failure, wiring failure, etc., and can contribute to the improvement of the yield of the liquid crystal substrate.

[0043]

According to the method for forming a thin film laminate of the present invention, at least an insulating substrate is formed by forming a concave portion on the surface of a substrate having at least a surface made of an insulating material and forming a conductive film in the concave portion. It is possible to easily form a thin film laminate having a structure in which a conductor is formed. In particular, by forming a recess in the substrate using a resist as described above, it becomes possible to precisely form the recess with a predetermined size. Furthermore, in the method for forming a thin film laminate according to the method of the present invention, the material of the substrate and the material of the conductor embedded in the recess are not limited, and various materials can be selected according to a wide range of applications. As described above, it is easy to form a concave portion having a precise size in the substrate.

Therefore, when a laminated film is formed on the thin film laminated body manufactured by the above-described forming method, the laminated film can be formed with a uniform film thickness and the laminated film is formed on the thin film laminated body. The yield of the thin film structure constituted by the above becomes very good.

Therefore, the thin film laminate as described above can be applied to a semiconductor process or the like in which the thin film forming technique is a key technology. For example, when the thin film laminated body is applied to a liquid crystal substrate or the like, the insulating film and the conductive film formed on the thin film laminated body can be formed to have a uniform film thickness, and good electrical conductivity can be provided between the conductive films. It has an insulating property and can prevent the occurrence of insulation failure, wiring failure, etc., and can contribute to the improvement of the yield of the liquid crystal substrate.

Therefore, a thin film laminated body formed by the method of forming a thin film laminated body of the above-mentioned embodiment in an integrated circuit (IC) technology which has been remarkably developed by making individual circuit patterns minute. By applying
This can contribute to high integration and high speed of the IC technology.

[Brief description of drawings]

FIG. 1 is a diagram for explaining a process of forming a thin film laminate according to a first embodiment of the present invention.

FIG. 2 is a diagram for explaining a process of forming a thin film laminate of Production Example 1 in Example 1.

FIG. 3 is a diagram for explaining a process of forming a thin film laminate of Production Example 2 in Example 1.

FIG. 4 is a diagram for explaining a process of forming a thin film laminate in Example 2 of the present invention.

FIG. 5 is a diagram for explaining a process of forming a thin film laminate of Production Example 3 in Example 2.

FIG. 6 is a diagram for explaining a process of forming a thin film laminate in Example 3 of the present invention.

FIG. 7 is a diagram for explaining a process of forming a thin film laminate of Production Example 4 and Production Example 5 in Example 3;

FIG. 8 is a diagram for explaining a process of forming a thin film laminate of Production Example 6 in Example 3.

FIG. 9 is a diagram for explaining a process of forming a thin film laminate in Example 4 of the present invention.

FIG. 10 is a diagram for explaining a forming process of the thin film laminate of Production Example 7 in Example 4.

FIG. 11 is a diagram showing a state where side etching occurs when general etching is used as a means for forming a recess in a substrate made of an insulating material.

FIG. 12 is a schematic configuration diagram showing a configuration of a thin film laminated body in which a recess is formed in a substrate made of an insulating material, and a conductor is formed in the recess.

FIG. 13 is a schematic cross-sectional view of a conventional active matrix liquid crystal display device.

14 is an enlarged view of an essential part of the thin film transistor portion of FIG.

FIG. 15 is a diagram for explaining a manufacturing process of the thin film transistor shown in FIG. 13.

FIG. 16 is a circuit diagram showing an example of an equivalent circuit of a conventional active matrix liquid crystal display device.

17 is an example of a structure showing a state in which an insulating layer is formed on a gate electrode when the thin film transistor shown in FIG. 13 is formed by a conventional manufacturing method.

18 is an example of a configuration showing a state in which an insulating layer is formed on a gate electrode when the thin film transistor shown in FIG. 13 is formed by a conventional manufacturing method.

[Explanation of symbols]

20, 32, 44, Substrate with insulating surface 22, 35, 47, Insulating film 22A, 28A, 35A, 41A, 47A, 53A, 5
9A, 68A, 82A, recesses 23, 30, 36, 42, 48, conductive films 51, 57, 73, first conductive films 54, 54 ', 60, 74, second conductive films 25, 31, 37, 43, 49, 55, 61, 75, 8
5, thin film laminate 26, 38, 50, 56, glass substrate (substrate) 28, SOG film (insulating film) 30, Ni-P film (conductive film) 41, 53, 59, SiO ₂ film (insulating film) 42 , 54, Cu film (conductive film) 60, Al film 54 ', 84, Ni film

Front page continued (72) Inventor Chisato Iwasaki 1-7 Yukiya Otsukacho, Ota-ku, Tokyo Alps Electric Co., Ltd. (72) Inventor Yasuhiko Kasama 1-7 Yukiya Otsuka-cho, Ota-ku, Tokyo Alps Electric Co., Ltd. Company (72) Inventor Akira Abe 1-7 Yukiya Otsuka-cho, Ota-ku, Tokyo Alps Electric Co., Ltd. (72) Inventor Kenichi Mimori 1-7 Yukiya Otsuka-cho, Ota-ku, Tokyo Alps Electric Co., Ltd. (72) Inventor Makoto Sasaki 1-7 Yukiya Otsuka-cho, Ota-ku, Tokyo Alps Electric Co., Ltd.

Claims (4)

[Claims] 1. A resist film having a predetermined pattern is formed on at least a surface of a substrate having an insulating property, and an insulating film is formed on the surface of the substrate including or not on the resist film, and then the resist film. And forming a recess in the insulating film, and forming a conductive film in the recess. 2. A surface of a substrate having at least an insulating surface is subjected to activation treatment for electroless plating to form an activation treated surface, and then a resist film having a predetermined pattern is formed on the activation treated surface. Then, an insulating film is formed on the surface of the substrate including or not on the resist film, and the resist film is removed to form a recess in the insulating film whose bottom is the activation surface. To form
A method for forming a thin film laminate, characterized in that a conductive film is selectively formed by electroless plating treatment only in this recess. 3. A first conductive film is formed on the surface of a substrate having at least an insulating surface, a resist film having a predetermined pattern is formed on the first conductive film, and then the resist film is masked. As appropriate, the first conductive film is removed,
After forming an insulating film with a film thickness thicker than the first conductive film on the surface of the substrate including or not on the resist film, the resist film is removed, and the bottom of the insulating film is the first film. A method for forming a thin film laminate, comprising forming a recess serving as one conductive film and selectively forming the second conductive film only on the first conductive film in the recess. 4. An insulating film is formed on a surface of a substrate, a resist film having a predetermined pattern is formed on the insulating film, and the insulating film is provided with a recess whose bottom is the substrate by using the resist film as a mask. Forming, forming a first conductive film on the recess and the resist film, and removing the resist film to remove the first conductive film formed on the resist film, and forming on the recess A method for forming a thin film laminate, which comprises selectively forming a second conductive film on the formed first conductive film.