JPH06168899A - Heater unit for heating substrate - Google Patents

Heater unit for heating substrate

Info

Publication number
JPH06168899A
JPH06168899A JP34171092A JP34171092A JPH06168899A JP H06168899 A JPH06168899 A JP H06168899A JP 34171092 A JP34171092 A JP 34171092A JP 34171092 A JP34171092 A JP 34171092A JP H06168899 A JPH06168899 A JP H06168899A
Authority
JP
Japan
Prior art keywords
heater unit
heat
heating element
heat insulating
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34171092A
Other languages
Japanese (ja)
Inventor
Masayuki Suzuki
雅行 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP34171092A priority Critical patent/JPH06168899A/en
Publication of JPH06168899A publication Critical patent/JPH06168899A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To provide a heater unit for heating substrate which realizes energy saving and shortening of processing time while enhancing quality and yield of substrate. CONSTITUTION:In a cylindrical heater unit 7 having ceiling in which a coiled heating element 10 is surrounded by a cylindrical vessel 9 having a vacuum thermal insulation layer 8 and mirror side face, the heating element 10 is fed with power from power supply sections 15, 15 to heat the interior of the heater unit. The cylindrical vessel 9 blocks conduction of heat to the outside by means of the vacuum thermal insulation layer 8 and the mirror face on the inside of the cylindrical vessel 9 reflects radiation of heat.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体基板に熱処理、或
は成膜処理をして半導体を製造する半導体製造装置の、
特に処理時の加熱を行うヒータユニットに関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor by heat-treating or film-forming a semiconductor substrate,
In particular, the present invention relates to a heater unit that performs heating during processing.

【0002】[0002]

【従来の技術】先ず、図2に於いて示される従来のヒー
タユニットについて説明する。
2. Description of the Related Art First, a conventional heater unit shown in FIG. 2 will be described.

【0003】図2のヒータユニット1は被処理物をヒー
タユニット1の内部で処理する円筒型ヒータユニットで
ある。該ヒータユニット1は天井付の円筒体で、外側か
ら金属外壁2、断熱層3、発熱体4で構成され、該発熱
体4の内側は中空となっている。
The heater unit 1 shown in FIG. 2 is a cylindrical heater unit that processes an object to be processed inside the heater unit 1. The heater unit 1 is a cylindrical body with a ceiling, and is composed of a metal outer wall 2, a heat insulating layer 3 and a heating element 4 from the outside, and the inside of the heating element 4 is hollow.

【0004】前記ヒータユニット1の構成を詳述する
と、前記発熱体4はコイル状で、前記ヒータユニット1
の外部に設けられた電力供給部5,5を介して給電され
る。
Explaining the structure of the heater unit 1 in detail, the heating element 4 has a coil shape, and the heater unit 1
Power is supplied via power supply units 5 and 5 provided outside the device.

【0005】前記発熱体4の下面を除く外周をセラミク
ス、断熱ウール等の断熱材で所要厚さになる様に囲み、
断熱層3とし、所定の断熱性能を保つ様にしている。更
に、該断熱層3は、その外周を金属板等の金属外壁2で
囲うことで形状を保つ様にしている。
The outer periphery of the heating element 4 excluding the lower surface is surrounded by a heat insulating material such as ceramics or heat insulating wool so as to have a required thickness.
The heat insulating layer 3 is used so as to maintain a predetermined heat insulating performance. Further, the heat insulating layer 3 is kept in shape by surrounding the outer periphery thereof with a metal outer wall 2 such as a metal plate.

【0006】又、前記ヒータユニット1の天井部分に
は、外側の金属外壁2から内側の中空部まで垂直方向に
冷却口6が穿設され、前記ヒータユニット1内部の強制
冷却が行える様になっている。
Further, a cooling port 6 is vertically formed in the ceiling portion of the heater unit 1 from the outer metal outer wall 2 to the inner hollow portion so that the inside of the heater unit 1 can be forcibly cooled. ing.

【0007】前記ヒータユニット1に於いて半導体基板
の熱処理、或は成膜処理を行う場合、前記発熱体4を前
記電力供給部5,5より給電して発熱させ、ヒータユニ
ット1内部を加熱する。又基板処理後、前記発熱体4及
び前記ヒータユニット1内を冷却するが、降温時の降温
時間短縮の為に前記冷却口6から気体を導入し、前記ヒ
ータユニット1内部の強制冷却を行うということも一般
的に行われている。
When the heater unit 1 performs heat treatment or film formation on a semiconductor substrate, the heating element 4 is heated by supplying power from the power supply units 5 and 5 to heat the inside of the heater unit 1. . Also, after the substrate processing, the inside of the heating element 4 and the heater unit 1 is cooled, but gas is introduced from the cooling port 6 to shorten the cooling time at the time of cooling, and the inside of the heater unit 1 is forcedly cooled. Things are also commonly done.

【0008】[0008]

【発明が解決しようとする課題】ところが、前記ヒータ
ユニット1は前述した様な構成であるので、断熱層3が
厚く、熱容量が大きい。従って、前記ヒータユニット1
内部が定常状態に達するまでの昇温・降温時間が長く、
ヒータユニットの稼動効率が低くなる。
However, since the heater unit 1 is constructed as described above, the heat insulating layer 3 is thick and the heat capacity is large. Therefore, the heater unit 1
It takes a long time to raise and lower the temperature until the inside reaches a steady state.
The operating efficiency of the heater unit becomes low.

【0009】又、冷却時の前記冷却口6からの気体の導
入によって、前記断熱層3に使用されている断熱ウール
からパーティクルが発生し、ヒータユニット1内が該パ
ーティクルにより汚染され、清浄な環境を好む半導体基
板の処理には不適切な環境となる。
Further, when the gas is introduced from the cooling port 6 during cooling, particles are generated from the heat insulating wool used in the heat insulating layer 3, and the inside of the heater unit 1 is contaminated with the particles, so that a clean environment is obtained. It becomes an unsuitable environment for the processing of semiconductor substrates that prefer to.

【0010】更に、前記断熱層3の断熱性能は余り優れ
たものではないので、ヒータユニット1外に熱が逃げる
のを避けることができず、防熱板やラジエタ等を設けな
ければならなかった。
Further, since the heat insulating property of the heat insulating layer 3 is not so excellent, it is unavoidable that heat escapes to the outside of the heater unit 1 and a heat insulating plate and a radiator have to be provided.

【0011】本発明は斯かる実情に鑑み、省エネルギ、
処理時間の短縮を図り、断熱性、熱的応答性の向上、
又、半導体基板の品質並びに歩留まりの向上を実現し得
るヒータユニットを提供しようとするものである。
In view of such circumstances, the present invention is energy saving,
Aiming at shortening the processing time, improving heat insulation and thermal response,
Another object of the present invention is to provide a heater unit that can improve the quality and yield of semiconductor substrates.

【0012】[0012]

【課題を解決するための手段】本発明は、天井付円筒型
ヒータユニットに於いて、発熱体を真空断熱層を有する
円筒容器で囲繞し、該円筒容器内側面を鏡面としたもの
である。
According to the present invention, in a cylindrical heater unit with a ceiling, a heating element is surrounded by a cylindrical container having a vacuum heat insulating layer, and the inner surface of the cylindrical container is a mirror surface.

【0013】[0013]

【作用】コイル状の発熱体が電力供給部より給電される
と、該発熱体が発熱し、ヒータユニット内部を加熱す
る。又、円筒容器は真空断熱層により外部への熱伝導を
遮断し、又円筒容器内側面の鏡面により外部への熱輻射
を反射する。
When the coil-shaped heating element is supplied with power from the power supply section, the heating element generates heat and heats the inside of the heater unit. Further, the cylindrical container blocks heat conduction to the outside by the vacuum heat insulating layer, and reflects the heat radiation to the outside by the mirror surface of the inner surface of the cylindrical container.

【0014】[0014]

【実施例】以下、図面を参照して本発明の実施例を説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0015】図1に示すヒータユニット7は、図2で示
した従来のヒータユニット1と同様天井付円筒型ヒータ
ユニットであり、該ヒータユニット7の外壁となる部分
は、内部が真空断熱層8となる円筒容器9になってお
り、該円筒容器9の内側は後述する発熱体10、電気絶
縁体11、発熱体支持器12で構成される発熱部を具備
している。又、前記円筒容器9の内側面はメッキ等の手
段で鏡面としてある。
The heater unit 7 shown in FIG. 1 is a cylindrical heater unit with a ceiling similar to the conventional heater unit 1 shown in FIG. 2, and the inside of the outer wall of the heater unit 7 is a vacuum heat insulating layer 8. The inside of the cylindrical container 9 is provided with a heat generating portion composed of a heat generating element 10, an electrical insulator 11, and a heat generating element supporter 12, which will be described later. Further, the inner surface of the cylindrical container 9 is mirror-finished by means such as plating.

【0016】前記ヒータユニット7の発熱部について詳
述する。
The heat generating portion of the heater unit 7 will be described in detail.

【0017】前記発熱体支持器12は薄肉金属等ででき
た円筒であり、下部にはフランジ13が設けてある。
The heating element supporter 12 is a cylinder made of a thin metal or the like, and a flange 13 is provided at the bottom thereof.

【0018】前記発熱体10はコイル状で、セラミクス
等でできた前記電気絶縁体11を介して前記発熱体支持
器12に取付けてある。
The heating element 10 is in the shape of a coil and is attached to the heating element supporter 12 via the electrical insulator 11 made of ceramics or the like.

【0019】前記発熱体10の加熱は、前記発熱体支持
器12と前記円筒容器9を水平方向に貫通する様に穿設
したポート14に設けた電力供給部15,15から電力
を供給することで行われる。又、ポート(図示せず)を
更に設け、該ポートに温度計等の計器類を設ければ、ヒ
ータユニット7内の温度測定も容易に行うことができ
る。
To heat the heating element 10, power is supplied from power supply portions 15 and 15 provided in a port 14 formed so as to penetrate the heating element support 12 and the cylindrical container 9 in the horizontal direction. Done in. Further, if a port (not shown) is further provided and instruments such as a thermometer are provided at the port, the temperature inside the heater unit 7 can be easily measured.

【0020】更に、前記ヒータユニット7の天井部分に
は、外壁となる前記円筒容器9を垂直方向に貫通する冷
却口16が穿設されている。
Further, the ceiling portion of the heater unit 7 is provided with a cooling port 16 which vertically penetrates the cylindrical container 9 serving as an outer wall.

【0021】次に、前記ヒータユニット7内の加熱と冷
却について説明する。
Next, heating and cooling in the heater unit 7 will be described.

【0022】前記冷却口16を閉塞して前記電力供給部
15,15により前記発熱体10に電力を供給すると、
前記発熱体10が発熱し、前記ヒータユニット7内は次
第に昇温していく。前述した様に、前記ヒータユニット
7の外壁を円筒容器9とし、該円筒容器9内部を真空断
熱層8としたのでヒータユニット7外への熱伝導を遮断
すると共に、前記円筒容器9の内面は鏡面となっている
ので、前記発熱体10から発せられる輻射熱は反射さ
れ、その輻射熱を有効に利用できる。従って、効率の良
い断熱が行える。
When the cooling port 16 is closed and power is supplied to the heating element 10 by the power supply units 15 and 15,
The heating element 10 generates heat, and the temperature inside the heater unit 7 gradually rises. As described above, since the outer wall of the heater unit 7 is the cylindrical container 9 and the inside of the cylindrical container 9 is the vacuum heat insulating layer 8, heat conduction to the outside of the heater unit 7 is blocked, and the inner surface of the cylindrical container 9 is Since it is a mirror surface, the radiant heat emitted from the heating element 10 is reflected, and the radiant heat can be effectively used. Therefore, efficient heat insulation can be performed.

【0023】又、基板処理終了後前記ヒータユニット7
内の冷却を行う場合は、前記電力供給部15,15から
の電力供給を停止し、前記冷却口から気体を前記ヒータ
ユニット7内に導入することによって前記ヒータユニッ
ト7内で気体が流通し、降温を促進する。
The heater unit 7 is also provided after the substrate processing is completed.
When the inside of the heater is cooled, the power supply from the power supply units 15 and 15 is stopped, and gas is introduced into the heater unit 7 through the cooling port so that the gas flows in the heater unit 7. Promote cooling.

【0024】[0024]

【発明の効果】以上述べた如く本発明によれば、下記の
優れた効果を発揮する。
As described above, according to the present invention, the following excellent effects are exhibited.

【0025】 ヒータユニットの断熱層に真空断熱層
を用いたので高断熱性能を実現できると共に、ヒータユ
ニットの熱容量を小さくでき、省エネルギを図ることが
できる。
Since the vacuum heat insulating layer is used for the heat insulating layer of the heater unit, high heat insulating performance can be realized, the heat capacity of the heater unit can be reduced, and energy can be saved.

【0026】 ヒータユニットの熱的応答性が良いの
で、多くの定常状態、多段階に於ける基板処理が可能に
なると共に、昇温・降温時間を短縮できるので基板生産
量の増加が図れる。
Since the heater unit has good thermal responsiveness, substrate processing can be performed in many steady states and in multiple stages, and the temperature rise / fall time can be shortened, so that the substrate production amount can be increased.

【0027】 断熱層が金属壁で形成されるので強制
冷却時の気体導入時の発塵の虞れがなく、高品質な基板
の生産が期待できる。
Since the heat insulating layer is formed of a metal wall, there is no fear of dust generation when introducing gas during forced cooling, and high-quality substrate production can be expected.

【0028】 真空断熱層の断熱性が高いので防熱板
やラジエタ等の保護設備が不要となる。
Since the vacuum heat insulating layer has high heat insulating properties, protective equipment such as a heat insulating plate and a radiator is not required.

【0029】 真空断熱層の断熱性が高いので断熱層
の厚みを薄くでき、小型化が可能で省スペース化が図れ
る。
Since the vacuum heat insulating layer has high heat insulating properties, the thickness of the heat insulating layer can be reduced, the size can be reduced, and the space can be saved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.

【図2】従来例を示す断面図である。FIG. 2 is a sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

7 ヒータユニット 8 真空断熱層 9 円筒容器 10 発熱体 15 電力供給部 7 Heater Unit 8 Vacuum Insulation Layer 9 Cylindrical Container 10 Heating Element 15 Power Supply Section

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 天井付円筒型ヒータユニットに於いて、
発熱体を真空断熱層を有する円筒容器で囲繞したことを
特徴とする基板加熱用ヒータユニット。
1. A ceiling-type cylindrical heater unit, comprising:
A heater unit for heating a substrate, characterized in that a heating element is surrounded by a cylindrical container having a vacuum heat insulating layer.
【請求項2】 円筒容器内側面を鏡面とした請求項1の
基板加熱用ヒータユニット。
2. The heater unit for heating a substrate according to claim 1, wherein the inner surface of the cylindrical container has a mirror surface.
JP34171092A 1992-11-27 1992-11-27 Heater unit for heating substrate Pending JPH06168899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34171092A JPH06168899A (en) 1992-11-27 1992-11-27 Heater unit for heating substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34171092A JPH06168899A (en) 1992-11-27 1992-11-27 Heater unit for heating substrate

Publications (1)

Publication Number Publication Date
JPH06168899A true JPH06168899A (en) 1994-06-14

Family

ID=18348184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34171092A Pending JPH06168899A (en) 1992-11-27 1992-11-27 Heater unit for heating substrate

Country Status (1)

Country Link
JP (1) JPH06168899A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5567152A (en) * 1994-04-12 1996-10-22 Tokyo Electron Limited Heat processing apparatus
WO2000060913A1 (en) * 1999-04-06 2000-10-12 Eightech Tectron Co., Ltd. Device for heating printed-circuit board
JP2007095789A (en) * 2005-09-27 2007-04-12 Kumamoto Technology & Industry Foundation Radiation heating arrangement
WO2007046414A1 (en) * 2005-10-18 2007-04-26 Tokyo Electron Limited Processing apparatus
JP2012234981A (en) * 2011-05-02 2012-11-29 Mirapuro:Kk Decompression processing container

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5567152A (en) * 1994-04-12 1996-10-22 Tokyo Electron Limited Heat processing apparatus
WO2000060913A1 (en) * 1999-04-06 2000-10-12 Eightech Tectron Co., Ltd. Device for heating printed-circuit board
US6423945B1 (en) 1999-04-06 2002-07-23 Eighttech Tectron Co., Ltd. Device for heating printed-circuit board
KR100621301B1 (en) * 1999-04-06 2006-09-13 에이텍크 테크트론 가부시키가이샤 Heater of printed board
JP2007095789A (en) * 2005-09-27 2007-04-12 Kumamoto Technology & Industry Foundation Radiation heating arrangement
WO2007046414A1 (en) * 2005-10-18 2007-04-26 Tokyo Electron Limited Processing apparatus
JP2007142363A (en) * 2005-10-18 2007-06-07 Tokyo Electron Ltd Processor
US8485127B2 (en) 2005-10-18 2013-07-16 Tokyo Electron Limited Processing apparatus
JP2012234981A (en) * 2011-05-02 2012-11-29 Mirapuro:Kk Decompression processing container

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