JPH11204239A - Plate type heater, its manufacture and thin film manufacturing device - Google Patents

Plate type heater, its manufacture and thin film manufacturing device

Info

Publication number
JPH11204239A
JPH11204239A JP380498A JP380498A JPH11204239A JP H11204239 A JPH11204239 A JP H11204239A JP 380498 A JP380498 A JP 380498A JP 380498 A JP380498 A JP 380498A JP H11204239 A JPH11204239 A JP H11204239A
Authority
JP
Japan
Prior art keywords
plate
heating element
heat transfer
thin film
transfer plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP380498A
Other languages
Japanese (ja)
Inventor
Shinji Kiyofuji
真次 清藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP380498A priority Critical patent/JPH11204239A/en
Publication of JPH11204239A publication Critical patent/JPH11204239A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a plate type heater of excellent temperature uniformity in which gas storage or emission will not occur, and a manufacturing method and a thin film manufacturing device to manufacture high purity and uniform thin film. SOLUTION: A plate type heater in which a sheath heat generation body 22 incorporated in a heat conductive plate 21 comprising metal, and in which one surface is set as heating surface comprising the heat conductive plate 21, the sheath heat generation body 22 installed on a bottom of a heat generation body groove 21a formed on the other surface to be parallel to the heating surface, and metal filler 25 cast between the heat generation body groove 21a and the sheath heat generation body 22 without a gap, and this filler 25 is welded with the heat transfer plate 21 at a weld part 26. A thin film manufacturing device to form a thin film of metal or semiconductor by sputtering or plasma chemical vapor phase deposition is provided with the plate type heater.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば薄膜光電変
換素子の製造のために、基板表面にスパッタなどにより
成膜する場合に、基板を真空中で加熱するプレート型ヒ
ータに関し、またプレート型ヒータを備えた薄膜製造装
置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plate type heater for heating a substrate in a vacuum when a film is formed on a substrate surface by sputtering or the like, for example, for manufacturing a thin film photoelectric conversion element. The present invention relates to a thin film manufacturing apparatus provided with:

【0002】[0002]

【従来の技術】図3は従来のプレート型ヒータを用いた
真空容器内でスパッタにより薄膜を形成する薄膜製造装
置の模式断面図である。このような薄膜製造装置は、真
空容器3内の真空中で基板1を加熱するプレート型ヒー
タ2を有しており、カソード4とアノード5の間の放電
(電源は6)によりスパッタしてターゲット3の物質を
基板へ移して薄膜を形成する。また、所定の原料ガスを
外部より導入してプラズマ反応により基板に薄膜を形成
するすなわちプラズマ化学気相成長(CVD)の場合も
同様のプレート型ヒータ2を用いている。
2. Description of the Related Art FIG. 3 is a schematic sectional view of a thin film manufacturing apparatus for forming a thin film by sputtering in a vacuum vessel using a conventional plate type heater. Such a thin-film manufacturing apparatus has a plate-type heater 2 for heating a substrate 1 in a vacuum in a vacuum vessel 3, and performs sputtering by discharging between a cathode 4 and an anode 5 (power supply is 6). The substance 3 is transferred to the substrate to form a thin film. The same plate type heater 2 is used also in the case of forming a thin film on a substrate by a plasma reaction by introducing a predetermined source gas from the outside, that is, in the case of plasma enhanced chemical vapor deposition (CVD).

【0003】これらのプレート型ヒータには、ヒータ表
面の温度の均一性と、ヒータから発生する脱ガスが少な
いこと、またプラズマ反応ガスの吸蔵が少ないことなど
の高いクリーン度が要求されている。図4は従来のプレ
ート型ヒータの側面図である。従来のプレート型ヒータ
には、ニクロム線などの発熱体を外周に酸化マグネシウ
ムなどの絶縁体で被覆し、これらを保護する耐熱材のス
テンレスまたはインコネルなどからなる保護管で覆っ
た、いわゆるシース型発熱体22が用いられている。こ
のシース型発熱体22を内蔵するように、その外周をア
ルミニウム鋳物などで形成された伝熱プレート21があ
る。この伝熱プレート21は内蔵したヒータの熱を均一
に分散し、基板と加熱面21sに接触して加熱する役割
をもっている。伝熱プレートの面積は基板の加熱面積に
合わせて決められるが、この伝熱プレートの面積に合わ
せ、シース型発熱体を曲げ加工し、伝熱プレートが均一
に加熱されるであろう形状に成形し、これを鋳型内に固
定し、伝熱プレートとなるアルミニウムなどを鋳造成形
をする。
[0003] These plate type heaters are required to have a high degree of cleanness, such as uniformity of the temperature on the surface of the heater, little degassing generated from the heater, and little occlusion of plasma reaction gas. FIG. 4 is a side view of a conventional plate type heater. Conventional plate-type heaters have a so-called sheath-type heater in which a heating element such as a nichrome wire is coated on the outer periphery with an insulator such as magnesium oxide, and is covered with a protective tube made of a heat-resistant material such as stainless steel or inconel to protect these elements. A body 22 is used. There is a heat transfer plate 21 whose outer periphery is formed of an aluminum casting or the like so as to incorporate the sheath type heating element 22. The heat transfer plate 21 has a function of uniformly dispersing the heat of the built-in heater and heating the substrate by contacting the substrate and the heating surface 21s. The area of the heat transfer plate is determined according to the heating area of the substrate, but according to the area of this heat transfer plate, the sheath-type heating element is bent to form a shape that will heat the heat transfer plate uniformly. Then, this is fixed in a mold, and aluminum or the like serving as a heat transfer plate is cast and formed.

【0004】[0004]

【発明が解決しようとする課題】このような鋳造伝熱プ
レートを用いたプレート型ヒータの問題点として、鋳物
製であり表面および内部に巣と呼ばれる微小空間が形成
される。これは鋳物材に特有の現象である。この空間に
は材料溶融時の様々なガスが内蔵されており、真空中で
加熱すると伝熱プレート表面より放出される。また表面
部の巣には加工中の機械加工油が侵入し、加工後に洗浄
しても除去できない。この加工油も真空中での加熱によ
りガス化され放出される。これらのガスは薄膜形成時に
有害であることは明らかである。またCVD(化学気相
成長)装置などにおいては、ガス種を切り替え、複数階
の成膜を行うが、この際前処理に用いたガスが、伝熱プ
レートの空間に吸蔵され、次処理の際放出され、目的の
成膜ができなくなることもある。
As a problem of the plate type heater using such a cast heat transfer plate, a minute space called a cavity is formed on the surface and inside of the heater. This is a phenomenon peculiar to the casting material. This space contains various gases when the material is melted, and is released from the surface of the heat transfer plate when heated in a vacuum. Also, machining oil during processing enters the nests on the surface, and cannot be removed even after washing after processing. This processing oil is also gasified and released by heating in vacuum. Obviously, these gases are harmful when forming the thin film. In a CVD (Chemical Vapor Deposition) apparatus or the like, the gas type is changed to form a plurality of layers of film. At this time, the gas used for the pretreatment is absorbed in the space of the heat transfer plate, and is used for the next treatment. It may be released, making it impossible to form a target film.

【0005】また、ヒータ鋳込み時の問題として、溶融
金属(湯)を鋳型に流し込む際に、シース型発熱体が溶
融金属により変形し、初期に成形した形状がずれ、伝熱
プレートの表面に平行にならず、伝熱プレートの表面温
度差が大きくなることも挙げられる。この伝熱プレート
の温度差は薄膜製造装置においては不均一な薄膜を形成
する原因となる。
[0005] Another problem at the time of casting the heater is that when the molten metal (hot water) is poured into the mold, the sheath-type heating element is deformed by the molten metal, so that the initially formed shape is displaced and becomes parallel to the surface of the heat transfer plate. In other words, the difference in the surface temperature of the heat transfer plate is increased. This temperature difference between the heat transfer plates causes a non-uniform thin film to be formed in the thin film manufacturing apparatus.

【0006】本発明の目的は、温度の均一性に優れ、内
部および表面に巣がなくガスの吸蔵や放出の起こらない
伝熱プレートを有するプレート型ヒータとその製造方法
を提供し、また、高純度で均一な薄膜を製造できるプレ
ート型ヒータを有する薄膜製造方法装置を提供すること
にある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a plate type heater having a heat transfer plate which is excellent in temperature uniformity, has no cavities inside and on the surface and does not occlude or release gas, and a method of manufacturing the same. An object of the present invention is to provide a thin film manufacturing method apparatus having a plate-type heater capable of manufacturing a thin film having a uniform purity.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに、シース発熱体が金属からなる伝熱プレートに内蔵
されてなり、片面を加熱面とするプレート型ヒータにお
いて、前記伝熱プレートと、その加熱表面に平行に他の
面に形成された発熱体溝の底に設置された前記シース発
熱体と、この発熱体溝とシース発熱体との間に隙間なく
鋳込まれた金属の充填物とからなり、さらにこの充填物
は伝熱プレートに溶接されていることとする。
In order to achieve the above-mentioned object, in a plate type heater having a heat generating body made of metal and having a heat generating plate built in a metal and having one surface as a heating surface, the heat generating plate and the sheath heat generating element are connected to each other. The sheath heating element installed at the bottom of the heating element groove formed on the other surface in parallel with the heating surface, and filling of metal cast without gap between the heating element groove and the sheath heating element And the filler is welded to the heat transfer plate.

【0008】前記伝熱プレートは圧延成形または鍛造成
形された金属板であると良い。前記充填物はアルミニウ
ムであると良い。伝熱プレートに予め形成された発熱体
溝にシース発熱体を設置し、発熱体溝に金属溶融金属を
鋳込み冷却硬化させて充填物とし、この充填物を伝熱プ
レートに溶接して固着する請求項1ないし3に記載のプ
レート型ヒータの製造方法であって、前記金属の溶融金
属を伝熱プレートの発熱体溝に鋳込む工程では、伝熱プ
レートの発熱体溝に置かれたシース発熱体に通電し加熱
状態に保持すると良い。
The heat transfer plate is preferably a rolled or forged metal plate. Preferably, the filler is aluminum. A sheath heating element is installed in a heating element groove formed in advance on the heat transfer plate, a molten metal is cast into the heating element groove, cooled and hardened to form a filler, and the filler is fixed to the heat transfer plate by welding. Item 4. The method of manufacturing a plate-type heater according to any one of Items 1 to 3, wherein in the step of casting the molten metal of the metal into the heat generating element groove of the heat transfer plate, the sheath heat generating element placed in the heat generating element groove of the heat transfer plate. It is advisable to energize and maintain a heated state.

【0009】前記充填物の伝熱プレートへの溶接時には
シース発熱体に通電し加熱状態に保持すると良い。フレ
キシブルな基板をプレート型ヒータの近傍に一定距離に
保持、または密着して保持して加熱しながら、スパッタ
またはプラズマ化学気相成長により、基板表面に金属ま
たは半導体の薄膜を形成する薄膜製造装置において、前
記プレート型ヒータを上記のプレート型ヒータとする。
When the filler is welded to the heat transfer plate, the sheath heating element is preferably energized and maintained in a heated state. A thin film manufacturing apparatus that forms a metal or semiconductor thin film on a substrate surface by sputtering or plasma enhanced chemical vapor deposition while holding a flexible substrate at a fixed distance in the vicinity of a plate type heater or holding in close contact and heating. The plate-type heater is referred to as the above-described plate-type heater.

【0010】本発明によれば、シース型発熱体は伝熱プ
レートの加熱面に平行にかつ隙間なく熱伝導の良い金属
充填物により固着されるので、伝熱プレートの加熱面の
温度の均一性は高くなり、伝熱プレートの昇温は早いと
期待できる。さらに充填物と発熱体溝とを溶接したの
で、伝熱プレートの温度サイクルに対しても充填物の密
着性は変化せず、ヒータ型プレートの寿命は長いと期待
できる。
[0010] According to the present invention, the sheath-type heating element is fixed to the heating surface of the heat transfer plate in parallel with the heating surface of the heat transfer plate without any gap by the metal filler having good heat conductivity. And the heat transfer plate can be expected to heat up quickly. Further, since the filler and the heating element groove are welded, the adhesion of the filler does not change even with the temperature cycle of the heat transfer plate, and the life of the heater plate can be expected to be long.

【0011】また、伝熱プレートを巣の多い鋳物材に替
えて、巣のない圧延成形あるいは鍛造成形された金属板
を使用することにしたので、巣に起因する、吸蔵ガスの
放出や機械加工油の放出は非常に少なくなり、真空中で
の放出ガスが不純物となってはならない半導体薄膜の製
造も容易になると期待できる。この発熱体溝の容積は小
さく、充填物の鋳込み時の伝熱プレートおよびシース型
発熱体を高温としたので、溶融金属の流れは良く隙間や
巣は少なくなり、充填物と発熱体溝の密着性は良くな
り、昇温、温度の均一性や寿命に優れる。
In addition, since the heat transfer plate is replaced with a cast material having many cavities, a rolled or forged metal plate having no cavities is used. It can be expected that the release of oil will be very small and that the production of semiconductor thin films in which the gas released in vacuum must not become an impurity will be easy. Since the volume of the heating element groove is small and the temperature of the heat transfer plate and the sheath-type heating element at the time of filling the filling material is high, the flow of the molten metal is good and the gaps and nests are small, and the filling material and the heating element groove are in close contact. The properties are improved, and the temperature rise, temperature uniformity and life are excellent.

【0012】また、溶接時にはシース型発熱体に通電
し、高温としているので、通常行われるバーナ加熱など
は不要となり、溶接作業も容易であり一人で行うことが
できる。また、溶接部には巣は生じない。
Further, during welding, the sheath-type heating element is energized and heated to a high temperature, so that the usual burner heating or the like becomes unnecessary, and the welding operation is easy and can be performed by one person. Also, no burrs are formed in the welded portion.

【0013】[0013]

【発明の実施の形態】実施例1 図1は本発明に係るプレート型ヒータを示し、(a)は
側面図であり、(b)は平面図である。 図2は本発明
に係るプレートヒータの図1におけるXX断面図であ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIGS. 1A and 1B show a plate type heater according to the present invention, wherein FIG. 1A is a side view and FIG. 1B is a plan view. FIG. 2 is a sectional view taken along the line XX in FIG. 1 of the plate heater according to the present invention.

【0014】圧延成形されたアルミニウム板材を用いた
伝熱プレート21にヒータ(加熱)面とは反対側より、
ヒータ本体22を埋設するための発熱体溝21aを形成
した。この発熱体溝21aはフライス加工などにより加
工される。均熱性や機械的強度から、発熱体溝21aの
深さは伝熱プレートの厚さの1/2以下が好ましい。ま
た、発熱体溝21aの深さは発熱体溝21aの底にシー
ス型発熱体22を置いたとき、流し込んだ溶融金属が硬
化してなる充填物25がシース型発熱体22を完全に覆
い、また充填物25と伝熱プレート21の溶接接合部を
形成できる程度とした。熱膨張差により伝熱プレート2
1が変形したり反らないように、充填物および溶接材
(溶接棒)26は伝熱プレート21と同じ主成分の材質
を用いることが好ましいが、伝熱プレートを耐熱性のた
めステンレス鋼とし充填物および溶接材をアルミニウム
系合金や銅系合金とすることも可能である。
A heat transfer plate 21 made of a rolled aluminum plate is placed on a heat transfer plate 21 from a side opposite to a heater (heating) surface.
A heating element groove 21a for embedding the heater body 22 was formed. The heating element groove 21a is processed by milling or the like. From the viewpoint of heat uniformity and mechanical strength, the depth of the heating element groove 21a is preferably not more than の of the thickness of the heat transfer plate. When the sheath-type heating element 22 is placed at the bottom of the heating element groove 21a, the filling 25 formed by curing the poured molten metal completely covers the sheath-type heating element 22. Further, it was set to such an extent that a welded joint between the filler 25 and the heat transfer plate 21 could be formed. Heat transfer plate 2 due to thermal expansion difference
The filler and the welding material (welding rod) 26 are preferably made of the same material as the heat transfer plate 21 so that the heat transfer plate 1 is not deformed or warped. The filler and the welding material may be an aluminum alloy or a copper alloy.

【0015】また、伝熱プレート21の中心部にはシー
ス型発熱体の温度制御を行うための熱電対を保持する、
ステンレス鋼管などの管状の熱電対ポート23を設け
た。この管の中へ熱電対を伝熱プレート21の底まで挿
入する。また、シースヒータの端部には、薄膜製造装置
本体に取り付ける際に使用するステンレス鋼からなる真
空シール用キャップ24を設けてある。
Further, a thermocouple for controlling the temperature of the sheath-type heating element is held at the center of the heat transfer plate 21.
A tubular thermocouple port 23 such as a stainless steel tube was provided. A thermocouple is inserted into the tube up to the bottom of the heat transfer plate 21. At the end of the sheath heater, there is provided a vacuum sealing cap 24 made of stainless steel used when the sheath heater is attached to the thin film manufacturing apparatus main body.

【0016】製造工程は以下のようにした。先ず、アル
ミニウムの圧延板を用い、伝熱プレートの所望の形状と
熱設計に従い、発熱体溝をフライス加工により形成し
た。発熱体溝に合致するように、シース型発熱体を曲げ
加工し、発熱体溝の底に置いた。次に、発熱体溝に置い
たシース型発熱体に通電加熱しながら溶融金属を流入す
るとシース型発熱体の表面および溝の隅まで溶融金属が
流れ込み、より伝熱プレートとの密着がよく、熱伝達の
良いプレート型ヒータが得られる。
The manufacturing process was as follows. First, using a rolled aluminum plate, a heating element groove was formed by milling according to a desired shape and thermal design of the heat transfer plate. The sheath type heating element was bent so as to match the heating element groove, and was placed at the bottom of the heating element groove. Next, when the molten metal flows into the sheath-type heating element placed in the heating element groove while being electrically heated, the molten metal flows to the surface of the sheath-type heating element and to the corners of the groove, and the adhesion to the heat transfer plate is better, and A plate type heater with good transmission can be obtained.

【0017】こうして、シース型発熱体の位置は設計通
りとなり、伝熱プレートに均一に熱を伝え、温度差のな
いヒータとなる。また、伝熱プレートの形状に合わせ任
意にヒータ本体を設置でき、温度差のないヒータを提供
できる。また、溶接に際し、シース型発熱体の通電加熱
により、この溶接部周辺を350℃以上に加熱でき、溶
接作業を容易に行うことができる。他の作業者によるバ
ーナ加熱は不要であり一人作業によりコストダウンも可
能となる。 実施例2 実施例1で作製したプレート型ヒータをスパッタによる
薄膜製造装置(図3参照)に取り付け、金属電極層を、
またプラズマCVDによる薄膜製造装置に取り付け、お
よびアモルファスシリコンの光電変換層を作製し、これ
らの薄膜を用いて薄膜太陽電池を作製した。
In this manner, the position of the sheath-type heating element is as designed, and the heat is uniformly transmitted to the heat transfer plate, so that the heater has no temperature difference. Further, the heater main body can be arbitrarily installed according to the shape of the heat transfer plate, and a heater having no temperature difference can be provided. Further, at the time of welding, the periphery of the welded portion can be heated to 350 ° C. or more by the electric heating of the sheath-type heating element, and the welding operation can be easily performed. Burner heating by other workers is not required, and cost can be reduced by one person. Example 2 The plate type heater manufactured in Example 1 was attached to a thin film manufacturing apparatus by sputtering (see FIG. 3), and a metal electrode layer was formed.
In addition, a thin film solar cell was manufactured using the thin film by attaching the film to a thin film manufacturing apparatus by plasma CVD and forming a photoelectric conversion layer of amorphous silicon.

【0018】その結果、従来の鋳込みプレート型ヒータ
を用いて各薄膜を作製した場合に較べ、特性のばらつき
が減少し、製造歩留りが改善された。
As a result, as compared with the case where each thin film is manufactured by using the conventional cast plate type heater, variation in characteristics is reduced, and the production yield is improved.

【0019】[0019]

【発明の効果】本発明によれば、シース発熱体が金属か
らなる伝熱プレートに内蔵されてなり、片面を加熱面と
するプレート型ヒータにおいて、前記伝熱プレートと、
その加熱表面に平行に他の面に形成された発熱体溝の底
に設置された前記シース発熱体と、この発熱体溝とシー
ス発熱体との間に隙間なく鋳込まれた金属の充填物とか
らなり、さらにこの充填物を伝熱プレートに溶接するよ
うにしたため、シース型発熱体は伝熱プレートの加熱面
に平行にかつ隙間なく熱伝導の良い金属充填物により固
着されるので、伝熱プレートの加熱面の温度の均一性は
高くなり、伝熱プレートの昇温は早い。また、充填物と
発熱体溝とを溶接したので、伝熱プレートの温度サイク
ルに対しても充填物の密着性は変化せず、ヒータ型プレ
ートの寿命は長い。
According to the present invention, there is provided a plate type heater in which a sheath heating element is built in a heat transfer plate made of metal and has a heating surface on one side.
A sheath heating element installed at the bottom of a heating element groove formed on another surface in parallel with the heating surface, and a metal filler cast without gap between the heating element groove and the sheath heating element Since the filler is welded to the heat transfer plate, the sheath-type heating element is fixed to the heat transfer plate in parallel with the heating surface of the heat transfer plate by a metal filler having good heat conduction without gaps. The uniformity of the temperature of the heating surface of the heat plate is increased, and the temperature of the heat transfer plate rises quickly. Further, since the filler and the heating element groove are welded, the adhesion of the filler does not change even with the temperature cycle of the heat transfer plate, and the life of the heater type plate is long.

【0020】また、伝熱プレートを巣の多い鋳物材に替
えて、巣のない圧延成形あるいは鍛造成形された金属板
を使用することにしたので、巣に起因する、吸蔵ガスの
放出や機械加工油の放出は非常に少なくなり、半導体薄
膜などの汚染はなくなり高純度の半導体薄膜の製造にも
適用できる。また、シース型発熱体に通電加熱しながら
鋳込み作業や溶接作業を行うので、溶接部にも巣は生じ
ず、通常行われるバーナ加熱などは不要となり、溶接作
業も容易であり一人で行えるし、コスト低減にもなる。
In addition, since the heat transfer plate is replaced with a cast material having many cavities, a rolled or forged metal plate without cavities is used. The release of oil is very low, and the contamination of the semiconductor thin film and the like is eliminated, and the present invention can be applied to the production of a high-purity semiconductor thin film. In addition, since the casting operation and the welding operation are performed while the sheath-type heating element is energized and heated, no burrs are formed in the welded portion, so that the usual burner heating is not required, and the welding operation is easy and can be performed alone. It also reduces costs.

【0021】また、本発明にかかるプレート型ヒータを
備えた、薄膜製造装置は温度の均一性、薄膜の非汚染ま
た長寿命などの特長を有し、特に薄膜光電変換素子の製
造などに適している。
Further, the thin film manufacturing apparatus provided with the plate type heater according to the present invention has features such as temperature uniformity, non-contamination of the thin film and long life, and is particularly suitable for manufacturing a thin film photoelectric conversion element. I have.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るプレート型ヒータを示し、(a)
は側面図であり、(b)は平面図
FIG. 1 shows a plate-type heater according to the present invention, wherein (a)
Is a side view, and (b) is a plan view.

【図2】本発明に係るプレートヒータの図1におけるX
X断面図
FIG. 2 shows the plate heater according to the present invention in FIG.
X sectional view

【図3】従来のプレート型ヒータを用いた真空容器内で
スパッタにより薄膜を形成する薄膜製造装置の模式断面
FIG. 3 is a schematic cross-sectional view of a thin-film manufacturing apparatus for forming a thin film by sputtering in a vacuum vessel using a conventional plate-type heater.

【図4】従来のプレート型ヒータの側面図FIG. 4 is a side view of a conventional plate heater.

【符号の説明】[Explanation of symbols]

1 基板 2 プレート型ヒータ 21 伝熱プレート 21a 発熱体溝 21s 加熱面 22 シース型発熱体 23 熱電対ポート 24 真空シール用キャップ 25 充填物 26 溶接部 DESCRIPTION OF SYMBOLS 1 Substrate 2 Plate type heater 21 Heat transfer plate 21a Heating element groove 21s Heating surface 22 Sheath type heating element 23 Thermocouple port 24 Vacuum sealing cap 25 Filler 26 Welded part

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】シース発熱体が金属からなる伝熱プレート
に内蔵されてなり、片面を加熱面とするプレート型ヒー
タにおいて、前記伝熱プレートと、その加熱表面に平行
に他の面に形成された発熱体溝の底に設置された前記シ
ース発熱体と、この発熱体溝とシース発熱体との間に隙
間なく鋳込まれた金属の充填物とからなり、さらにこの
充填物は伝熱プレートに溶接されていることを特徴とす
るプレート型ヒータ。
1. A plate-type heater having a heat-generating body built in a heat-transfer plate made of metal and having one surface as a heating surface, wherein the heat-transfer plate is formed on another surface in parallel with the heating surface. The heating element provided at the bottom of the heating element groove, and a metal filler cast without any gap between the heating element groove and the sheath heating element. A plate type heater characterized by being welded to a plate.
【請求項2】前記伝熱プレートは圧延または鍛造された
金属板であることを特徴とする請求項1に記載のプレー
ト型ヒータ。
2. The plate-type heater according to claim 1, wherein said heat transfer plate is a rolled or forged metal plate.
【請求項3】前記充填物はアルミニウムであることを特
徴とする請求項1に記載のプレート型ヒータ。
3. The plate heater according to claim 1, wherein said filler is aluminum.
【請求項4】伝熱プレートに予め形成された発熱体溝に
シース発熱体を設置し、発熱体溝に金属溶融金属を鋳込
み冷却硬化させて充填物とし、この充填物を伝熱プレー
トに溶接して固着する請求項1ないし3に記載のプレー
ト型ヒータの製造方法であって、前記金属の溶融金属を
伝熱プレートの発熱体溝に鋳込む工程では、伝熱プレー
トの発熱体溝に置かれたシース発熱体に通電し加熱状態
に保持することを特徴とするプレート型ヒータの製造方
法。
4. A sheath heating element is installed in a heating element groove formed in advance on the heat transfer plate, and a molten metal is cast into the heating element groove, cooled and hardened to form a filler, and the filler is welded to the heat transfer plate. 4. The method of manufacturing a plate-type heater according to claim 1, wherein the step of casting the molten metal of the metal into the heating element groove of the heat transfer plate comprises placing the molten metal in the heating element groove of the heat transfer plate. A method of manufacturing a plate-type heater, comprising supplying a current to a heated sheath heating element to maintain the heated state.
【請求項5】前記充填物の伝熱プレートへの溶接時には
シース発熱体に通電し加熱状態に保持することを特徴と
するプレート型ヒータの製造方法。
5. A method for manufacturing a plate-type heater, wherein a current is supplied to a sheath heating element to maintain a heated state when the filler is welded to a heat transfer plate.
【請求項6】フレキシブルな基板をプレート型ヒータの
近傍にまたは密着して保持して加熱しながら、スパッタ
またはプラズマ化学気相成長により、基板表面に金属ま
たは半導体の薄膜を形成する薄膜製造装置において、前
記プレート型ヒータは請求項1ないし3に記載のプレー
ト型ヒータであることを特徴とする薄膜製造装置。
6. A thin film manufacturing apparatus for forming a metal or semiconductor thin film on a substrate surface by sputtering or plasma chemical vapor deposition while heating a flexible substrate in the vicinity of or in close contact with a plate type heater. 4. The thin film manufacturing apparatus according to claim 1, wherein the plate heater is the plate heater according to claim 1.
JP380498A 1998-01-12 1998-01-12 Plate type heater, its manufacture and thin film manufacturing device Pending JPH11204239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP380498A JPH11204239A (en) 1998-01-12 1998-01-12 Plate type heater, its manufacture and thin film manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP380498A JPH11204239A (en) 1998-01-12 1998-01-12 Plate type heater, its manufacture and thin film manufacturing device

Publications (1)

Publication Number Publication Date
JPH11204239A true JPH11204239A (en) 1999-07-30

Family

ID=11567393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP380498A Pending JPH11204239A (en) 1998-01-12 1998-01-12 Plate type heater, its manufacture and thin film manufacturing device

Country Status (1)

Country Link
JP (1) JPH11204239A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133216A (en) * 2003-10-31 2005-05-26 Lg Phillips Lcd Co Ltd Susceptor for deposition process equipment, and method of fabricating the same
JP2006108527A (en) * 2004-10-08 2006-04-20 Furukawa Sky Kk Heater plate, and manufacturing method thereof
JP2006114230A (en) * 2004-10-12 2006-04-27 Sukegawa Electric Co Ltd Heating element having embedded heater, and its manufacturing method
KR100664580B1 (en) 2006-03-17 2007-01-04 주식회사 마이크로텍 Main plate of susceptor
KR100664581B1 (en) * 2006-03-17 2007-01-04 주식회사 마이크로텍 Main plate of susceptor
JP2007165068A (en) * 2005-12-13 2007-06-28 Nippon Dennetsu Co Ltd Thermo-plate
JP2007169777A (en) * 2005-10-18 2007-07-05 Applied Materials Inc Heated type substrate support and its manufacturing method
KR100885379B1 (en) * 2002-10-02 2009-02-23 엘지디스플레이 주식회사 Plasma enhanced chemical vapor deposition apparatus
JP2009535801A (en) * 2006-04-28 2009-10-01 ダンスン エレクトロン カンパニー リミテッド Manufacturing method of susceptor and susceptor manufactured by this method
KR101010646B1 (en) 2008-11-17 2011-01-24 주식회사 메카로닉스 Heater block

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100885379B1 (en) * 2002-10-02 2009-02-23 엘지디스플레이 주식회사 Plasma enhanced chemical vapor deposition apparatus
JP2005133216A (en) * 2003-10-31 2005-05-26 Lg Phillips Lcd Co Ltd Susceptor for deposition process equipment, and method of fabricating the same
JP2006108527A (en) * 2004-10-08 2006-04-20 Furukawa Sky Kk Heater plate, and manufacturing method thereof
JP2006114230A (en) * 2004-10-12 2006-04-27 Sukegawa Electric Co Ltd Heating element having embedded heater, and its manufacturing method
JP2007169777A (en) * 2005-10-18 2007-07-05 Applied Materials Inc Heated type substrate support and its manufacturing method
JP2007165068A (en) * 2005-12-13 2007-06-28 Nippon Dennetsu Co Ltd Thermo-plate
JP4585441B2 (en) * 2005-12-13 2010-11-24 日本電熱株式会社 Thermo plate
KR100664580B1 (en) 2006-03-17 2007-01-04 주식회사 마이크로텍 Main plate of susceptor
KR100664581B1 (en) * 2006-03-17 2007-01-04 주식회사 마이크로텍 Main plate of susceptor
JP2009535801A (en) * 2006-04-28 2009-10-01 ダンスン エレクトロン カンパニー リミテッド Manufacturing method of susceptor and susceptor manufactured by this method
KR101010646B1 (en) 2008-11-17 2011-01-24 주식회사 메카로닉스 Heater block

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