KR100664580B1 - Main plate of susceptor - Google Patents

Main plate of susceptor Download PDF

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Publication number
KR100664580B1
KR100664580B1 KR1020060024889A KR20060024889A KR100664580B1 KR 100664580 B1 KR100664580 B1 KR 100664580B1 KR 1020060024889 A KR1020060024889 A KR 1020060024889A KR 20060024889 A KR20060024889 A KR 20060024889A KR 100664580 B1 KR100664580 B1 KR 100664580B1
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South Korea
Prior art keywords
main plate
susceptor
heating wire
section
lcd substrate
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KR1020060024889A
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Korean (ko)
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KR20060032608A (en
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송성태
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주식회사 마이크로텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

본 발명은 서셉터의 메인플레이트에 관한 것으로서,The present invention relates to a main plate of a susceptor,

LCD기판에 박막을 증착하는 플라즈마 화학기상 증착 장비의 챔버 내에 설치된 샤워헤드의 하측에 설치되며, LCD기판이 전기적으로 접지되어 지지되고, 열을 인가하는 서셉터의 메인플레이트에 있어서, 상기 메인플레이트의 하면이 중심점을 기준으로 양 수직선에 의해 4등분되는 4개의 섹션으로 이루어지며, 상기 섹션의 가장자리 부근을 따라 소정 패턴으로 만곡지게 배열되고, 양단이 중앙부에 위치되는 제1열선과, 상기 제1열선의 내부영역에 소정 패턴으로 만곡지게 배열되고, 양단이 중앙부에 위치되는 제2열선을 포함하여 구성되어,In the main plate of the susceptor which is installed under the shower head installed in the chamber of the plasma chemical vapor deposition equipment for depositing a thin film on the LCD substrate, the LCD substrate is electrically grounded, and applies heat, The lower surface is composed of four sections divided into four quarters by two vertical lines on the basis of the center point, and arranged in a curved pattern along the edge of the section, the first heating line and both ends are located in the center, and the first heating line It is arranged to be curved in a predetermined pattern in the inner region of the two ends, and comprises a second heating wire located in the central portion,

서셉터의 메인플레이트에 삽입되는 열선배열을 개선하여 메인플레이트에 안착되는 LCD기판의 가로방향의 변형률과 세로방향의 변형률이 동일하게 하여 대형LCD에 적용함으로써 가장자리 부근의 시야확보가 유리한 대형LCD기판을 제작할 수 있다.By improving the heating arrangement to be inserted into the main plate of the susceptor, the horizontal and vertical strains of the LCD substrate mounted on the main plate are the same, so that they are applied to large LCDs to provide large LCD substrates with favorable visibility around the edges. I can make it.

서셉터, 열선배열 Susceptor, Heat Array

Description

서셉터의 메인플레이트{Main plate of susceptor}Main plate of susceptor

도 1은 일반적인 플라즈마 화학기상 증착 장비의 구성을 개략적으로 나타낸 도면.1 is a view schematically showing the configuration of a typical plasma chemical vapor deposition equipment.

도 2는 일반적인 서셉터의 열선삽입구조를 나타낸 평면도.Figure 2 is a plan view showing a heat ray insertion structure of a typical susceptor.

도 3a는 도 2의 A-A' 단면의 메인플레이트의 열 분포곡선을 도시한 도면.3A is a diagram showing a heat distribution curve of a main plate of AA ′ cross-section of FIG. 2.

도 3b는 도 2의 B-B' 단면의 메인플레이트의 열 분포곡선을 도시한 도면.3B is a diagram showing a heat distribution curve of the main plate of the section BB ′ of FIG. 2.

도 4는 본 발명의 일실시예에 의한 서셉터의 메인플레이트 일부사시도.Figure 4 is a partial perspective view of the main plate of the susceptor according to an embodiment of the present invention.

도 5는 본 발명의 일실시예에 의한 서셉터의 메인플레이트 평면도.5 is a plan view of the main plate of the susceptor according to an embodiment of the present invention.

도 6a는 도 5의 C-C' 단면의 메인플레이트의 열 분포곡선을 도시한 도면.FIG. 6A illustrates a heat distribution curve of the main plate of the cross-section taken along line C-C 'in FIG. 5; FIG.

도 6b는 도 5의 D-D' 단면의 메인플레이트의 열 분포곡선을 도시한 도면.FIG. 6B is a diagram showing a heat distribution curve of the main plate of the cross-sectional view taken along the line D-D 'of FIG.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10:반응챔버 20:챔버덮개10: reaction chamber 20: chamber cover

30:O-링 40:슬롯밸브30: O-ring 40: Slot valve

50:샤워헤드형 플라즈마 전극 50a:분사구멍50: showerhead plasma electrode 50a: injection hole

60a:기체주입관 60b:기체배기관60a: gas injection pipe 60b: gas exhaust pipe

70:LCD기판 100, 200:서셉터70: LCD substrate 100, 200: susceptor

100a, 200a:메인플레이트 100b, 200b:삽입홈100a, 200a: Main plate 100b, 200b: Insertion groove

105, 205:덮개부 145, 245:중앙부105, 205: cover part 145, 245: center part

210:제1열선 220:제2열선 210: first heating wire 220: second heating wire

130, 230:열선 240a, 240b:수직선 130, 230: hot wire 240a, 240b: vertical wire

245a:중심점245a: center point

본 발명은 서셉터의 메인플레이트에 관한 것으로서, 보다 상세하게는 서셉터의 메인플레이트에 삽입되는 열선배열을 개선하여 메인플레이트에 안착되는 LCD기판의 가로방향의 변형률과 세로방향의 변형률이 동일하게 하여 대형LCD에 적용함으로써 가장자리 부근의 시야확보가 유리한 대형LCD기판을 제작할 수 있는 서셉터의 메인플레이트에 관한 것이다.The present invention relates to a main plate of a susceptor, and more particularly, to improve the heating arrangement to be inserted into the main plate of the susceptor so that the strain in the horizontal direction and the longitudinal direction of the LCD substrate seated on the main plate is the same. The present invention relates to a main plate of a susceptor capable of manufacturing a large LCD substrate having an advantageous field of view near the edge by applying to a large LCD.

최근 정보화 사회로 시대가 급발전함에 따라 박형화, 경량화, 저소비전력화 등의 우수한 특성을 가지는 평판표시장치(plate panel display)의 필요성이 대두되었고, 이에 액정표시장치(Liquid Crystal Display, LCD)가 개발되어 노트북이나 데스크톱 모니터 등에 활발하게 사용되고 있다.With the recent rapid development of the information society, the necessity of a flat panel display having excellent characteristics such as thinness, light weight, and low power consumption has emerged. Accordingly, a liquid crystal display (LCD) has been developed. It is actively used in laptops and desktop monitors.

액정표시장치란, 서로 대향되는 두 기판의 일면에 각각 전계 생성 전극을 형성한 후 이들 전극을 서로 마주보도록 배치한 상태에서 그 사이에 액정 물질을 삽 입하여 구성되는 것으로, 상기 각각의 전극에 전압을 인가하여 생성되는 전기장의 변화에 따라 액정을 구동시킴으로써 변화하는 빛의 투과율로 화상을 표현하는 장치이다.A liquid crystal display device is formed by forming a field generating electrode on one surface of two substrates facing each other, and then inserting a liquid crystal material therebetween with the electrodes facing each other, wherein a voltage is applied to each electrode. It is a device for representing an image with a transmittance of light that changes by driving the liquid crystal in accordance with the change of the electric field generated by applying a.

일반적으로 액정표시장치를 제조하기 위한 장비로서, 도 1에 도시된 바와 같이 플라즈마 화학기상 증착 장비가 이용되며, 도 2는 이러한 플라즈마 화학기상 증착 장비 내에 설치되는 서셉터의 열선삽입구조를 나타낸 평면도이다.In general, as an apparatus for manufacturing a liquid crystal display device, a plasma chemical vapor deposition apparatus is used as shown in FIG. 1, and FIG. 2 is a plan view illustrating a heat ray insertion structure of a susceptor installed in the plasma chemical vapor deposition apparatus. .

도 1 및 도 2를 참조하여 플라즈마 화학기상 증착 장비를 설명하면 다음과 같다.The plasma chemical vapor deposition apparatus will be described with reference to FIGS. 1 and 2 as follows.

일반적인 플라즈마 화학기상 증착 장비는 상부가 개방된 반응챔버(10)가 챔버덮개(20)에 의해 덮여지게 된다. 이에 따라, 반응챔버(10)와 챔버덮개(20)에 의해 외부와 차단된 반응공간이 형성된다. 또한, 반응공간의 효과적인 밀폐를 위해 반응챔버(10)와 챔버덮개(20) 사이에는 O-링(30)이 삽입되어 설치된다.In a typical plasma chemical vapor deposition apparatus, a reaction chamber 10 having an open top is covered by a chamber cover 20. Accordingly, the reaction space is cut off from the outside by the reaction chamber 10 and the chamber cover 20 is formed. In addition, the O-ring 30 is inserted and installed between the reaction chamber 10 and the chamber cover 20 to effectively seal the reaction space.

그리고 반응공간 내에는 이송수단(45)에 의해 상하 이송이 가능하고 전기적으로 접지되는 서셉터(100)가 설치된다. 이때, 증착이 수행될 LCD기판(70)은 서셉터(100)의 상부, 즉 메인플레이트(100a)에 안착되며, 메인플레이트(100a)에 형성된 삽입홈(100b)에는 LCD기판(70)을 가열시키기 위한 열선(130)이 중앙부(145)로부터 연결되어 장착된 후 덮개부(105)로 덮혀진다.In the reaction space, a susceptor 100 capable of vertically conveying by the transfer means 45 and electrically grounded is installed. In this case, the LCD substrate 70 to be deposited is seated on the upper part of the susceptor 100, that is, the main plate 100a, and the LCD substrate 70 is heated in the insertion groove 100b formed in the main plate 100a. The heating wire 130 to be connected is mounted from the central portion 145 and then covered with the cover portion 105.

한편, 서셉터(100)의 상부에 마련되는 반응공간에는 외부 RF 발전기와 연결되는 샤워헤드형 플라즈마 전극(50)이 설치된다. 이와 같은 플라즈마 전극(50)은 속이 비어 있으며, 기체 주입관(60a)은 플라즈마 전극(50)의 내부와 연결되도록 설 치된다. 그리고 플라즈마 전극(50)의 저면에는 미세한 직경을 가지는 복수의 분사구멍(50a)이 일정간격으로 형성되어 있다.Meanwhile, a showerhead plasma electrode 50 connected to an external RF generator is installed in the reaction space provided above the susceptor 100. The plasma electrode 50 is hollow, and the gas injection tube 60a is installed to be connected to the inside of the plasma electrode 50. In the bottom surface of the plasma electrode 50, a plurality of injection holes 50a having minute diameters are formed at regular intervals.

이에 따라, 기체 주입관(80a)에 의해 플라즈마 전극(50)으로 주입된 기체는 분사구멍(50a)을 통하여 반응공간으로 분사되며, 반응공간으로 분사된 기체는 기체 배기관(80b)을 통하여 배기된다. 그리고 플라즈마 전극(50)은 스테인리스 또는 알루미늄 등의 금속 재질로 이루어지며, 플라즈마에 의한 아크 발생을 방지하기 위하여 통상적으로 그 표면은 양극화처리(anodizing)된다.Accordingly, the gas injected into the plasma electrode 50 by the gas injection tube 80a is injected into the reaction space through the injection hole 50a, and the gas injected into the reaction space is exhausted through the gas exhaust pipe 80b. . In addition, the plasma electrode 50 is made of a metal material such as stainless steel or aluminum, and the surface thereof is usually anodized to prevent arc generation by plasma.

또한, 반응챔버(10)의 측벽에는 로드락부(미도시)와 반응공간과의 연통 여부를 결정하는 슬롯밸브(40)가 설치되어 있으며, 이와 같은 로드락부로부터 서셉터(100)의 상부로 LCD기판(70)을 이송시키기 위해서는 슬롯밸브(40)를 열어야 한다.In addition, the side wall of the reaction chamber 10 is provided with a slot valve 40 for determining the communication between the load lock portion (not shown) and the reaction space, the LCD from the load lock portion to the top of the susceptor 100 In order to transfer the substrate 70, the slot valve 40 must be opened.

상술한 바와 같은 일반적인 플라즈마 화학기상 증착 장비에서 LCD기판(70)에 전기적으로 접지되어 지지하고, 열을 인가하여 균일한 박막을 형성시키는 부분이 서셉터(100)이다.In the general plasma chemical vapor deposition apparatus as described above, the susceptor 100 is electrically grounded and supported by the LCD substrate 70 and forms a uniform thin film by applying heat.

종래 서셉터(100)의 메인플레이트(100a)에 삽입되는 열선(130)의 배열은 도 2에 도시된 바와 같이 양측이 대칭되는 폐곡선의 형상으로 이루어지는데, 이러한 형상은 도 2에 도시된 바와 같이 메인플레이트(100a)의 중앙단면측에 고온부가 형성되는 원인이 되었다.The arrangement of the heating wire 130 inserted into the main plate 100a of the conventional susceptor 100 is formed in the shape of a closed curve in which both sides are symmetrical, as shown in FIG. 2, which is shown in FIG. 2. The high temperature part was formed in the center end surface side of the main plate 100a.

이 고온부의 영향으로 도 3a에 도시된 바와 같이 A-A'단면에서는 메인플레이트(100a)의 열 분포가 균일하지만, 도 3b에 도시된 바와 같이 B-B'단면에서는 중앙측이 온도가 높고 양측이 온도가 낮아서 온도차가 발생되었다.As shown in FIG. 3A, the heat distribution of the main plate 100a is uniform in the cross-section A-A 'as shown in FIG. 3A, but in the cross-section B-B' as shown in FIG. This temperature was low, causing a temperature difference.

다시 말하면, 도 3a의 중앙측에는 열선이 배열되지 않은 것처럼 보이지만, 실제적으로 도 3a의 중앙측은 열선이 집중되어 배열되기 때문에 B-B'단면에서 보면 양측이 온도가 낮고, 중앙측이 온도가 높은 고온부가 형성되는 것이다.In other words, the heat lines do not appear to be arranged in the center side of FIG. 3A, but in practice, since the heat lines are arranged in the center side of FIG. 3A, both sides are low in temperature and a high temperature portion is high in the center side in B-B 'section. Is formed.

이와 같이 메인플레이트(100a)의 온도가 균일하지 않기 때문에 메인플레이트(100a)에 안착되는 LCD기판(70)에 열전달이 균일하게 이루어지지 않아서 온도가 높은 LCD기판(70)의 중앙측(메인플레이트의 A-A'단면과 접촉부분)은 열팽창이 많고, 이 중앙측에 비하여 온도가 다소 낮은 LCD기판(70)의 양측(메인플레이트의 A-A'단면을 기준으로 양측)은 열팽창이 적으므로 A-A'단면을 기준으로 양측으로만 "h"와 같은 갭(gab)이 발생되는 문제점이 있었다.Since the temperature of the main plate 100a is not uniform as described above, heat transfer is not uniformly performed on the LCD substrate 70 seated on the main plate 100a, so that the temperature of the main plate 100a is high. A-A 'cross section and the contact portion) have a lot of thermal expansion, and both sides (both sides of the A-A' cross section of the main plate) of the LCD substrate 70 having a somewhat lower temperature than this center side have less thermal expansion. There was a problem in which a gap such as "h" was generated only on both sides based on the -A 'section.

본 발명은 상기와 같은 문제점을 감안하여 안출한 것으로서, LCD기판의 가로방향의 변형률과 세로방향의 변형률이 동일하게 하여 대형LCD에 적용함으로써 가장자리 부근의 시야확보가 유리한 대형LCD기판을 제작할 수 있는 서셉터의 메인플레이트를 제공하는 것을 그 목적으로 한다.The present invention has been made in view of the above-mentioned problems, and it is possible to produce a large LCD substrate having an advantageous field of view near the edge by applying it to a large LCD with the same horizontal strain and vertical strain of the LCD substrate. Its purpose is to provide a main plate for the acceptor.

상기와 같은 목적을 달성하기 위한 본 발명은 LCD기판에 박막을 증착하는 플라즈마 화학기상 증착 장비의 챔버 내에 설치된 샤워헤드의 하측에 설치되며, LCD기판이 전기적으로 접지되어 지지되고, 열을 인가하는 서셉터의 메인플레이트에 있어서, 상기 메인플레이트(200a)의 하면이 중심점(245a)을 기준으로 양 수직선에 의해 4등분되는 4개의 섹션으로 이루어지며, 상기 섹션의 가장자리 부근을 따라 소정 패턴으로 만곡지게 배열되고, 양단이 중앙부(245)에 위치되는 제1열선(210)과, 상기 제1열선(210)의 내부영역에 소정 패턴으로 만곡지게 배열되고, 양단이 중앙부(245)에 위치되는 제2열선(220)을 포함하여 구성된 것을 특징으로 한다.The present invention for achieving the above object is installed on the lower side of the shower head installed in the chamber of the plasma chemical vapor deposition equipment for depositing a thin film on the LCD substrate, the LCD substrate is electrically grounded and supported, In the main plate of the acceptor, the lower surface of the main plate 200a is composed of four sections divided into four quarters by two vertical lines with respect to the center point 245a, and is arranged to be curved in a predetermined pattern near the edge of the section. The first heating wire 210 having both ends positioned at the center portion 245 and the second heating wire having both ends curved at a predetermined pattern in an inner region of the first heating wire 210. Characterized in that it comprises a 220.

더욱 바람직하게, 상기 제1열선, 제2열선의 패턴이 동일한 것을 특징으로 한다.More preferably, the patterns of the first heating wire and the second heating wire are the same.

더욱 바람직하게, 상기 각 섹션의 열선 배열 패턴이 동일한 것을 특징으로 한다.More preferably, the heat line array pattern of each section is the same.

이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 일실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 4는 본 발명의 일실시예에 의한 서셉터의 메인플레이트 일부사시도, 도 5는 본 발명의 일실시예에 의한 서셉터의 메인플레이트 평면도, 도 6a는 도 5의 C-C' 단면의 메인플레이트의 열 분포곡선을 도시한 도면, 도 6b는 도 5의 D-D' 단면의 메인플레이트의 열 분포곡선을 도시한 도면이다.Figure 4 is a partial perspective view of the main plate of the susceptor according to an embodiment of the present invention, Figure 5 is a plan view of the main plate of the susceptor according to an embodiment of the present invention, Figure 6a is a 6B is a diagram showing a heat distribution curve, and FIG. 6B is a diagram showing a heat distribution curve of the main plate of the DD 'cross-section of FIG.

본 실시예의 서셉터(200) 메인플레이트(200a)의 하면은 중심점(245a)을 기준으로 양 수직선(240a, 240b)에 의해 4등분되는 4개의 섹션으로 이루어진다.The lower surface of the susceptor 200 main plate 200a of the present embodiment includes four sections divided into quarters by the vertical lines 240a and 240b with respect to the center point 245a.

다시 말하면, 도 5에 도시된 바와 같이 교차되는 양 수직선(240a, 240b)에 의해 구획선 C-D로 이루어지는 섹션, 구획선 C-D'로 이루어지는 섹션, 구획선 C'-D'로 이루어지는 섹션, 구획선 C'-D로 이루어지는 섹션과 같이 4등분 되는 4개의 섹션으로 이루어지는 것이다.In other words, the section consisting of the partition line CD, the section consisting of the partition line C-D ', the section consisting of the partition line C'-D', and the partition line C'- by both vertical lines 240a and 240b intersected as shown in FIG. It consists of four sections divided into four sections, such as a section consisting of D.

이러한 섹션은 열선(230)의 배열을 쉽게 설명하기 위함이므로, 4개의 섹션 이외에도 그 이상 또는 그 이하의 개수로 섹션을 구성할 수 있음은 물론이다.Since this section is for easily explaining the arrangement of the heating wire 230, it is a matter of course that the section can be configured with more or less than four sections.

한편, 도 4에 도시된 바와 같이 본 실시예의 서셉터(200)의 메인플레이트(200a)는 각 섹션의 가장자리 부근을 따라서 제1열선(210)이 배열되고, 이 제1열선(210)의 내부영역에 제2열선(220)이 배열된다.Meanwhile, as shown in FIG. 4, in the main plate 200a of the susceptor 200 according to the present embodiment, a first heating wire 210 is arranged along the edge of each section, and the inside of the first heating wire 210. The second heating wire 220 is arranged in the area.

다시 말하면, 제1열선(210)이 상기 섹션의 가장자리 부근을 따라서 소정 패턴으로 만곡지게 배열되어 삽입홈(미도시)에 삽입되고, 제2열선(220)이 상기 제1열선(210)의 내부영역에 소정 패턴으로 만곡지게 배열되어 삽입홈(미도시)에 삽입된 후 각각 덮개부(미도시)에 의해 덮히는 것이다.In other words, the first heating wire 210 is arranged to be curved in a predetermined pattern along the edge of the section and is inserted into the insertion groove (not shown), and the second heating wire 220 is inside the first heating wire 210. It is arranged to be curved in a predetermined pattern in the area is inserted into the insertion groove (not shown) and then covered by the cover (not shown), respectively.

먼저, 각 섹션마다 섹션의 가장자리 부근을 따라서 소정 패턴으로 만곡지게 배열되는 제1열선(210)에 대하여 설명한다.First, a description will be given of the first heating line 210 that is curved in a predetermined pattern along the edge of the section for each section.

제1열선(210)은 각 섹션의 가장자리 부근에 배열되어 열을 전달하는 구성요소로서, 양단이 중앙부(245)로 위치되며, 각 섹션의 가장자리로부터 일정한 거리를 두고 배열된다.The first heating line 210 is a component that is arranged near the edge of each section to transfer heat, and both ends thereof are positioned at the center portion 245 and are arranged at a predetermined distance from the edge of each section.

한편, 상기 제1열선(210)의 배열형태는 한 섹션의 범위를 벗어나지 않는 한 특정한 형태로 한정되지 않고 지그재그 형태나 물결무늬 형태 등과 같이 여러 형태로 배열될 수 있지만, 도 5에서와 같이 섹션의 가장자리를 따라 가장자리와 평행하게 배열되어 전체적으로 사각의 형태로 배열되는 것이 바람직하다.On the other hand, the arrangement of the first heating wire 210 is not limited to a particular shape as long as it does not depart from the scope of one section, but may be arranged in various forms such as a zigzag shape or a wavy pattern, but as shown in FIG. It is preferably arranged parallel to the edge along the edge and arranged in a rectangular shape as a whole.

또한, 각 섹션의 내부영역에 배열되는 제1열선(210)의 패턴이 4개의 섹션에서 모두 동일한 것이 바람직하다.In addition, it is preferable that the pattern of the first heating wire 210 arranged in the inner region of each section is the same in all four sections.

이는 4개의 섹션에서 제1열선(210)이 모두 다르게 배열되면 각 섹션마다 온도의 분포가 다르게되고 결국에는 LCD기판(70)의 가로방향의 변형량과 세로방향의 변형량 다르게 되기 때문에 4개의 섹션에서 제1열선(210)의 배열이 모두 동일하게 하여 가로방향과 세로방향의 변형량을 동일하게 하기 위한 것이다.This is because when the first heating lines 210 are arranged differently in four sections, the temperature distribution is different for each section, and eventually, the amount of deformation in the horizontal direction and the length in the longitudinal direction of the LCD substrate 70 is different. It is for equalizing the amount of deformation in the transverse direction and in the vertical direction by making the arrangement of the one column line 210 the same.

다음으로, 상기 제1열선(210)의 내부영역에 소정 패턴으로 만곡지게 배열되는 제2열선(220)에 대하여 설명한다.Next, the second heating wire 220 arranged in a predetermined pattern in the inner region of the first heating wire 210 will be described.

제2열선(220)은 제1열선(210)의 내부영역에 배열되어 각 섹션 중심부분에 열을 전달하는 구성요소로서, 양단이 중앙부(245)로 위치되며, 제1열선(210)으로부터 일정한 거리를 두고 배열된다.The second heating wire 220 is a component that is arranged in the inner region of the first heating wire 210 and transfers heat to the central portion of each section, and both ends thereof are positioned at the central portion 245, and are uniform from the first heating wire 210. Are arranged at a distance.

한편, 제2열선(220)의 배열 형태는 도 5에 도시된 바와 같이 제1열선(210)과 동일한 형태로 배열되며, 4개의 섹션에서 모두 동일한 것이 바람직하다.On the other hand, the arrangement of the second heating wire 220 is arranged in the same shape as the first heating wire 210, as shown in Figure 5, it is preferable that the same in all four sections.

이는 제1열선(210)의 배열이 4개의 섹션에서 모두 동일하게 하여 가로방향의 변형량과 세로방향의 변형량이 동일하게 한 것과 같은 이유이며, 제1열선(210)과 동일한 형태로 배열하는 것은 제1열선(210)의 만곡 형상에 따른 메인플레이트(200a)의 열분포에 대응되어 제2열선(220)이 열을 분포할 수 있도록 하여 각 섹션마다 온도 균일화를 최대한 유지하기 위함이다.This is the same reason that the arrangement of the first heating wire 210 is the same in all four sections so that the deformation amount in the horizontal direction and the deformation amount in the vertical direction are the same. This is to maintain the temperature uniformity for each section by allowing the second heating wire 220 to distribute heat in correspondence with the heat distribution of the main plate 200a according to the curved shape of the first heating wire 210.

상술한 바와 같이 제1열선(210)이 상기 섹션의 가장자리 부근을 따라 소정 패턴으로 만곡지게 배열되고, 제2열선(220)이 상기 제1열선(210)의 내부영역에 제1열선(210)과 동일한 패턴으로 만곡지게 배열되며, 이 제1열선(210)과 제2열선(220)의 패턴이 각 섹션마다 동일하게 적용되면 도 5에 도시된 바와 같이 중앙측에 열선 (230)이 집중되어 고온부가 형성되게 된다.As described above, the first heating wire 210 is arranged to be curved in a predetermined pattern along the edge of the section, and the second heating wire 220 is arranged in the inner region of the first heating wire 210. When the patterns of the first heating wire 210 and the second heating wire 220 are identically applied to each section, the heating wires 230 are concentrated at the center side as shown in FIG. 5. The high temperature portion is formed.

이렇게 메인플레이트(200a)의 중앙부분에 고온부가 형성되면 메인플레이트(200a)에 안착된 LCD기판(70)의 중앙측이 가장자리 부근보다 온도가 높아지게 되고, 이로 인하여 도 6a 및 도 6b에 도시된 바와 같이 중앙측의 고온부를 기준으로 LCD기판(70)이 사방으로 변형되어 오목한 형태로 형성된다.When the high temperature portion is formed in the central portion of the main plate 200a, the temperature of the center side of the LCD substrate 70 seated on the main plate 200a is higher than the edges, and as shown in FIGS. 6A and 6B. As described above, the LCD substrate 70 is formed in a concave shape by deforming in all directions with respect to the high temperature part of the center side.

다시 말하면, C-C'를 기준으로 하여 "a"만큼 떨어진 위치에 변형이 "h2"만큼 발생되는 동시에 D-D'를 기준으로 하여 "a"만큼 떨어진 위치에 변형이 "h2"만큼 발생되어 전체적으로 오목한 형태의 LCD기판(70)을 제작할 수 있다.In other words, deformation is generated by "h2" at the position "a" away from C-C 'and deformation is generated by "h2" at the location "a" away from D-D'. It is possible to manufacture the LCD substrate 70 of the concave shape as a whole.

이상 설명한 본 발명은 그 기술적 사상 또는 주요한 특징으로부터 벗어남이 없이 다른 여러 가지 형태로 실시될 수 있다. 따라서, 상기 실시예는 모든 점에서 단순한 예시에 지나지 않으며 한정적으로 해석되어서는 안 된다.The present invention described above can be embodied in many other forms without departing from the spirit or main features thereof. Therefore, the above embodiments are merely examples in all respects and should not be interpreted limitedly.

상기와 같이 구성된 본 발명에 의하면, 서셉터의 메인플레이트에 삽입되는 열선배열을 개선하여 메인플레이트에 안착되는 LCD기판의 가로방향의 변형률과 세로방향의 변형률이 동일하게 하여 대형LCD에 적용함으로써 가장자리 부근의 시야확보가 유리한 대형LCD기판을 제작할 수 있다.According to the present invention configured as described above, by improving the heating arrangement to be inserted into the main plate of the susceptor, the strain in the horizontal direction and the longitudinal direction of the LCD substrate seated on the main plate is the same, and applied to the large LCD, near the edge It is possible to manufacture large LCD substrates that have a favorable field of view.

또한, 제1열선과 제2열선의 패턴을 동일하게 하고, 각 섹션의 패턴을 동일하게 함으로써 중앙의 고온부를 제외한 나머지 부분의 온도 균일도를 유지할 수 있으므로 가로방향의 변형률과 세로방향의 변형률을 최대한으로 동일하게 할 수 있다.In addition, since the patterns of the first heating wire and the second heating wire are the same, and the pattern of each section is the same, the temperature uniformity of the remaining parts except the high temperature part in the center can be maintained, so that the horizontal strain and the vertical strain are maximized. The same can be done.

Claims (3)

LCD기판에 박막을 증착하는 플라즈마 화학기상 증착 장비의 챔버 내에 설치된 샤워헤드의 하측에 설치되며, LCD기판이 전기적으로 접지되어 지지되고, 열을 인가하는 서셉터의 메인플레이트에 있어서,In the main plate of the susceptor which is installed under the shower head installed in the chamber of the plasma chemical vapor deposition equipment for depositing a thin film on the LCD substrate, the LCD substrate is electrically grounded and supported, and applies heat, 상기 메인플레이트의 하면이 중심점을 기준으로 양 수직선에 의해 4등분되는 4개의 섹션으로 이루어지며,The lower surface of the main plate is made up of four sections divided by two vertical lines based on the center point, 상기 섹션의 가장자리 부근을 따라 소정 패턴으로 만곡지게 배열되고, 양단이 중앙부에 위치되는 제1열선과;A first heating line arranged in a predetermined pattern along an edge of the section and having both ends positioned at a central portion thereof; 상기 제1열선의 내부영역에 소정 패턴으로 만곡지게 배열되고, 양단이 중앙부에 위치되는 제2열선을 포함하여 구성된 것을 특징으로 하는 서셉터의 메인플레이트.The main plate of the susceptor, characterized in that it comprises a second heating wire arranged in a predetermined pattern in the inner region of the first heating wire, both ends are located in the center portion. 제1항에 있어서,The method of claim 1, 상기 제1열선, 제2열선의 패턴이 동일한 것을 특징으로 하는 서셉터의 메인플레이트.The main plate of the susceptor, characterized in that the pattern of the first heating wire, the second heating wire is the same. 제1항에 있어서,The method of claim 1, 상기 각 섹션의 열선 배열 패턴이 동일한 것을 특징으로 하는 서셉터의 메인플레이트.The main plate of the susceptor, characterized in that the hot wire arrangement pattern of each section is the same.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204239A (en) 1998-01-12 1999-07-30 Fuji Electric Corp Res & Dev Ltd Plate type heater, its manufacture and thin film manufacturing device
KR20020011793A (en) * 2000-08-04 2002-02-09 손명호 wide area heating module for fabricating semiconductor device
JP2004172225A (en) 2002-11-18 2004-06-17 Okazaki Mfg Co Ltd Plate heater
KR20040065814A (en) * 2003-01-16 2004-07-23 삼성전자주식회사 Apparatus for manufacturing semiconductor devices
JP2004288601A (en) 2003-03-24 2004-10-14 Sadayasu Ueno Hot plate using metal foil heater, its manufacturing method, and heat treatment method of liquid crystal panel using hot plate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204239A (en) 1998-01-12 1999-07-30 Fuji Electric Corp Res & Dev Ltd Plate type heater, its manufacture and thin film manufacturing device
KR20020011793A (en) * 2000-08-04 2002-02-09 손명호 wide area heating module for fabricating semiconductor device
JP2004172225A (en) 2002-11-18 2004-06-17 Okazaki Mfg Co Ltd Plate heater
KR20040065814A (en) * 2003-01-16 2004-07-23 삼성전자주식회사 Apparatus for manufacturing semiconductor devices
JP2004288601A (en) 2003-03-24 2004-10-14 Sadayasu Ueno Hot plate using metal foil heater, its manufacturing method, and heat treatment method of liquid crystal panel using hot plate

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