JPS61227169A - Sputtering device - Google Patents

Abstract

PURPOSE:To quickly and efficiently cool a substrate susceptor of a high temp. after film formation and to improve film forming efficiency by installing a cooling block having a water cooling means and high heat capacity on the rear side of the substrate susceptor and moving the susceptor after film formation so as to contact with said block. CONSTITUTION:This sputtering device forms a film on a substrate 8 supported by a substrate susceptor 5 in a vacuum vessel 1 provided with a discharge device 2 by heating the substrate 8 to about 300 deg.C by an electric heater 6 and sputtering a target 3 on a target support 4. The cooling block 2 having the water cooling means such as water cooling pipe 22 and having high heat capacity is installed on the rear side of the susceptor 5 of the above-mentioned sputtering device and the susceptor 5 is provided in such a manner that the susceptor can be pressed to and parted from the block 21 by an operating mechanism 23 for moving the susceptor. The susceptor 5 of the high temp. after the film formation is moved to contact with the block 21 to cool the substrate 8 to about 150 deg.C without natural cooling and is cooled to the room temp. with a water cooling hose 7 in the susceptor 5, then the substrate is taken out.

Description

[Detailed Description of the Invention] [Fence Required] In a sputtering apparatus that forms a thin film of a target material on a substrate by a sputtering method, a high-temperature device having a water cooling means on the wall of a vacuum container on the back side of a substrate support that supports a substrate is used. Along with installing a capacity cooling block,
The substrate support can be brought into contact with and separated from the cooling block, and the high temperature substrate support after film formation is moved and brought into contact with the cooling block to efficiently cool the substrate to room temperature,
This is intended to improve productivity by making it possible to take it out of the vacuum container in a short time.

[Industrial application field]

The present invention relates to a sputtering apparatus for forming a thin film made of a target material on a substrate by a sputtering method,
This invention relates to an improvement in the configuration of an apparatus that can efficiently cool a high-temperature substrate support in a short time after film formation.

Sputtering equipment, which forms a thin film of a target material on a substrate using a sputtering method, is widely used in the field of manufacturing semiconductor devices and magnetic recording media.
Various device configurations have already been proposed.

Generally, when forming a thin film on a substrate using a sputtering apparatus, sputtering is often performed at a substrate temperature of about several hundred degrees in order to improve the adhesion and film quality of the thin film to the substrate. At this time, there is a problem that the hot substrate support after film formation does not cool down easily, and it takes a long time to take out the film-formed substrate on the substrate support from the inside of the apparatus. It is desired to solve the problems and improve the film formation efficiency.

[Conventional technology]

As shown in FIG. 3, the conventional sputtering apparatus described above has a target support 4 on which a target 3 is attached, and a thin film is formed on the target support 4 in a vacuum vessel 1 equipped with an exhaust device 2, as shown in FIG. A substrate support 5 supporting a substrate 8 to be processed is disposed.

Further, the substrate support 5 has built-in an electric heater 6 for heating the substrate 8 and a water-cooled corrugated pipe 7 for cooling the heated substrate 8.

Then, using this kind of sputtering equipment, the substrate is
After forming a thin film on the substrate 8 by heating it to about 00°C, when the substrate 8 is lowered to room temperature and taken out of the vacuum container 1, the temperature of the substrate 8 is naturally cooled to at least about 150°C. After that, the substrate is cooled by flowing cooling water through the water-cooled corrugated tube 7 built into the substrate support 5, and the substrate is placed in the vacuum container 1 at approximately room temperature.
I'm taking it outside.

[Problem that the invention seeks to solve]

The reason for using the above substrate cooling method is that
If cooling water is suddenly allowed to flow into the water-cooled corrugated tube 7 built into the substrate support 5 which is at a temperature of about 0.000 C., the water-cooled corrugated tube 7 will be damaged due to the thermal shrinkage shock and rapidly generated high-pressure steam. This is to avoid problems such as

For this reason, the substrate support 5 including the substrate 8 is
It takes a long time (at least 5 to 6 degrees Celsius) to let it cool down naturally to about
This has the drawback that the number of film formation processes per unit time in these apparatuses is limited to a low number due to this.

The present invention was made in view of the above-mentioned problems.
The purpose is to develop a sputtering device that can efficiently cool down the substrate support 5 including the substrate 8 after film formation in a short time using a simple cooling method without using natural cooling. It is about providing.

[Means for solving problems]

In order to achieve the above object, as shown in FIG. A high heat capacity cooling block 21 equipped with a cooling means consisting of a spiral water cooling pipe 22 is installed at a distance, and the substrate support 5 is in contact with or separated from the high heat capacity cooling block 21. It is configured so that it can be moved.

[For production]

In such an apparatus configuration, the high-temperature substrate support 5 containing the substrate 8 after film formation is moved by the movement operation mechanism 23, and is equipped with a water cooling means consisting of a spiral water cooling pipe 22 installed at a distance on the back side thereof. By moving in the direction of the cooling block 21 and bringing it into contact with the cooling block 21, heat dissipation of the substrate support 5 is promoted, and the time required for cooling the substrate support 5 to room temperature can be significantly shortened.

〔Example〕

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of a sputtering apparatus according to the present invention.

In the figure, reference numeral 1 denotes a vacuum vessel 1.
Reference numeral 4 denotes a target support to which the target 3 is attached, and a substrate on which a thin film is to be formed. A substrate support 5 supporting a substrate 8 is arranged.

The substrate support 5 can be moved up and down by a moving operation mechanism 23, and a concentric donut-shaped spiral water cooling pipe 22 is provided on the wall of the vacuum container l on the back side of the substrate support 5. A cooling block 21 having a high heat capacity made of copper (Cu), prepared alloy, or stainless steel is installed as shown in the figure.

Incidentally, instead of the spiral water cooling pipe 22, an electronic cooler with radiation fins may be provided.

Next, the operation of the sputtering apparatus having such a configuration will be explained.

First, the substrate 8 supported by the substrate support 5 in a state separated from the cooling block 21 is heated to, for example, about 300° C. by the electric heater 6 built in the substrate support 5, and the heated state is maintained. A thin film having a predetermined thickness is deposited on the substrate 8 by sputtering.

Next, the heating of the substrate after film formation is stopped, and the high temperature substrate support 5 including the substrate 8 is moved by the operation mechanism 23 to the cooling block 21, which is installed at a distance on the back side thereof and is cooled with water in advance. Move and bring them into contact.

In this way, the heat of the substrate support 5 is rapidly transferred to the vacuum vessel through the cooling block 21 that comes into contact with it from the back side.
Since the heat is dissipated to the outside and cooling is promoted, the time required for the temperature to drop to approximately 150° C. is reduced by approximately half compared to the conventional method. Thereafter, by cooling the water-cooled corrugated tube 7 built in the substrate support 5 by flowing cooling water in parallel thereto, it becomes possible to significantly shorten the cooling time of the substrate 8. Therefore, the substrate 8 can be taken out of the vacuum container 1 at approximately room temperature in a short time that is approximately half the cooling time required in the prior art, improving productivity.

In the above embodiment, the spiral water cooling pipe 22 of the cooling block 21 is attached to the upper surface of the cooling block 21, and the contact surface between the cooling block 21 and the substrate support 5 is flat. Although a certain example has been described, the configuration of the present invention is not limited to this example. For example, as shown in FIG. The abutment surfaces 21a and 58 of the block 21 and the substrate support 5 may be formed into uneven surfaces that fit into each other to increase the mutual contact area, and the same effect can be obtained in this case as well. can get.

〔Effect of the invention〕

As is clear from the above description, according to the sputtering apparatus according to the present invention, cooling of a high-temperature substrate after film formation is facilitated by a high heat capacity cooling block equipped with a cooling means such as a spiral water-cooled pipe. This makes it possible to significantly shorten the cooling time for bringing the substrate to approximately room temperature and taking it out of the vacuum container compared to the conventional method, which has an excellent effect of greatly improving the productivity of the film forming process using this device. play.

Therefore, it is applicable to this type of sputtering apparatus and is extremely advantageous in practice.

[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a cross-sectional view showing one embodiment of a sputtering apparatus according to the present invention, and Fig. 2 is a cross-sectional view of essential parts for explaining another embodiment of the sputtering apparatus according to the present invention. , FIG. 3 is a rounded cross-sectional view illustrating a conventional sputtering apparatus. In Figures 1 and 2, (2) is a vacuum vessel, 3 is a target, 5 is a substrate support, 6 is an electric heater, 7 is a water cooling tube, 8 is a substrate, 21 is a cooling block, and 22 is a spiral water cooling pipe. , 23 indicate moving operation mechanisms, respectively. III 圀u=slffi Makihachi” on the shelf) Figure 3

Claims (1)

[Claims] A target (3) and a substrate support (5) supporting a substrate (8) facing the target (3) are arranged in a vacuum container (1),
In an apparatus configuration in which a target material is deposited on the substrate (8) by sputtering while the inside of the vacuum container (1) is in a sputtering gas atmosphere, the substrate support (5)
) is provided with a high heat capacity cooling block (21) having a water cooling means on the back side of the cooling block (21), and the substrate support (5) is provided so as to be able to come into contact with or be separated from the cooling block (21). A sputtering device characterized by: