JPH0616470A - Ceramic substrate and its production - Google Patents
Ceramic substrate and its productionInfo
- Publication number
- JPH0616470A JPH0616470A JP5071613A JP7161393A JPH0616470A JP H0616470 A JPH0616470 A JP H0616470A JP 5071613 A JP5071613 A JP 5071613A JP 7161393 A JP7161393 A JP 7161393A JP H0616470 A JPH0616470 A JP H0616470A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- ceramic substrate
- al2o3
- mgo
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はセラミックス基板及びそ
の製造方法、より詳細には電子部品を搭載するための多
層配線基板として多く用いられるセラミックス基板及び
その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate and a method for manufacturing the same, and more particularly to a ceramic substrate often used as a multilayer wiring board for mounting electronic parts and a method for manufacturing the same.
【0002】[0002]
【従来の技術】近年、高集積化したLSIや各種電子部
品を搭載する多層配線基板において、小型化、信頼性等
の要求から基板材料としてセラミックスが用いられるこ
とが多くなってきている。アルミナは強度が高い等の利
点を有するため、前記基板材料用のセラミックス中に占
める割合は大きい。しかし、一方前記アルミナは比誘電
率が大きいため伝送信号の遅延発生の原因になり、また
熱膨張係数がシリコンに比べて非常に大きいため、部品
を実装する際に信頼性を確保できないという問題点を有
している。さらにアルミナは焼成温度が約1500℃以
上と高いため、内層の配線に融点が高く電気抵抗率の大
きいW又はMoを使用する必要があり、配線を微細化す
ると電気抵抗が大きくなるという問題点をも有してい
る。2. Description of the Related Art In recent years, ceramics have been increasingly used as a substrate material in multilayer wiring boards on which highly integrated LSIs and various electronic components are mounted, because of the demands for downsizing and reliability. Since alumina has advantages such as high strength, it occupies a large proportion in the ceramics for the substrate material. On the other hand, however, alumina has a large relative permittivity, which causes a delay in transmission signals, and has a coefficient of thermal expansion much larger than that of silicon, so that reliability cannot be ensured when components are mounted. have. Further, since alumina has a high firing temperature of about 1500 ° C. or higher, it is necessary to use W or Mo having a high melting point and a large electric resistivity for the wiring in the inner layer, and there is a problem that the electric resistance increases when the wiring is miniaturized. I also have.
【0003】そこで、このような問題点を解決するため
に、比誘電率を小さくすると同時に、熱膨張係数をシリ
コンに近づけ、さらにCu、AgやAg−Pd等の低融
点の金属材料を内層導体として焼成することが可能な低
温焼成セラミックス基板の研究開発が進められている。In order to solve such a problem, therefore, the relative dielectric constant is made small, the coefficient of thermal expansion is made close to that of silicon, and a metal material having a low melting point such as Cu, Ag or Ag-Pd is used as the inner layer conductor. Research and development of low-temperature fired ceramics substrates that can be fired as is are underway.
【0004】一般に低温焼成セラミックス基板は、ガラ
ス材料と骨材と呼ばれる結晶材料とを混合し、焼成する
ことによって製造される。しかしガラス材料と結晶材料
との組合せの数は極めて多く、また両者を組み合わせた
ことにより焼成の際に相乗作用が働き、得られるセラミ
ックス基板の特性(比誘電率、熱膨張係数、焼成温度、
抗折強度等)が変化する。従って、最良の組合せを見つ
け、さらに常に一定の特性を出現させるように安定した
組成や構造を有するセラミックス基板を製造することは
困難であった。Generally, a low temperature fired ceramics substrate is manufactured by mixing a glass material and a crystal material called an aggregate and firing the mixture. However, the number of combinations of glass materials and crystal materials is extremely large, and the combination of both causes a synergistic effect during firing, resulting in the characteristics of the obtained ceramic substrate (dielectric constant, thermal expansion coefficient, firing temperature,
The bending strength, etc.) changes. Therefore, it has been difficult to find the best combination and to manufacture a ceramic substrate having a stable composition and structure so that constant characteristics are always exhibited.
【0005】このような背景の中、前記した比誘電率が
低く、熱膨張係数がシリコンに近いという特性を損なう
ことなく、強度を向上させ、信号伝達の高速化や搭載素
子の大型化等に対応できる低温焼成セラミックス基板と
して、特開平2−225338号公報に示されるような
コージェライト(2MgO・2Al2 O3 ・5SiO
2 )系結晶化ガラスが注目されるようになった。Against this background, the strength is improved without impairing the characteristics that the relative permittivity is low and the coefficient of thermal expansion is close to that of silicon, the speed of signal transmission is increased, and the size of mounted elements is increased. as a low-temperature fired ceramic substrate can correspond, cordierite, as shown in JP-a-2-225338 (2MgO · 2Al 2 O 3 · 5SiO
2 ) Crystallized glass has come to the fore.
【0006】[0006]
【発明が解決しようとする課題】しかし、前記特開平2
−225338号公報において用いられているコージェ
ライト系結晶化ガラスは、軟化温度が高く、また高温で
の粘性も高いので基板のち密化が難しいという課題があ
った。However, the above-mentioned Japanese Unexamined Patent Application Publication No.
The cordierite-based crystallized glass used in JP-A-225338 has a problem that it is difficult to densify the substrate because it has a high softening temperature and a high viscosity at a high temperature.
【0007】このような点から、Agを内層するのに必
要な950℃以下の温度やCu等を内層するのに必要な
1000℃以下の温度でコージェライト系結晶化ガラス
が析出するように焼成を行った場合には、得られたセラ
ミックス基板は、気孔率が充分に小さくならず、抗折強
度や耐湿性等が充分でなく、内層導体の酸化やマイグレ
ーションが発生し易く信頼性に乏しいものになるという
課題があった。From this point of view, it is fired so that the cordierite-based crystallized glass is deposited at a temperature of 950 ° C. or lower necessary for forming an inner layer of Ag and a temperature of 1000 ° C. or lower necessary for forming an inner layer of Cu or the like. In the case of carrying out the above, the obtained ceramic substrate has a porosity that is not sufficiently reduced, a bending strength and a moisture resistance are not sufficient, and oxidation and migration of the inner layer conductor are likely to occur and reliability is poor. There was a problem of becoming.
【0008】本発明は上記した課題に鑑みなされたもの
であり、1000℃以下、さらには950℃以下の焼成
によっても充分にち密化し、比誘電率が小さく、抗折強
度、耐湿性、耐水性等にも優れたセラミックス基板及び
その製造方法を提供することを目的としている。The present invention has been made in view of the above-mentioned problems, and it is sufficiently densified even by firing at 1000 ° C. or lower, further 950 ° C. or lower, and has a small relative dielectric constant, bending strength, moisture resistance and water resistance. It is an object of the present invention to provide a ceramic substrate excellent in the above and a manufacturing method thereof.
【0009】[0009]
【課題を解決するための手段】上記目的を達成するため
に本発明に係るセラミックス基板は、ガラスと結晶とか
らなるセラミックス基板において、前記ガラスはMgO
−Al2 O3 −SiO2 −B2 O3 −R2 O系ガラス
(Rはアルカリ金属を示す)からなり、前記結晶は2M
gO・2Al2 O3 ・5SiO2 結晶(コージェライ
ト)を含有していることを特徴としている。In order to achieve the above object, the ceramic substrate according to the present invention is a ceramic substrate composed of glass and crystals, wherein the glass is MgO.
-Al consists 2 O 3 -SiO 2 -B 2 O 3 -R 2 O -based glass (R is an alkali metal), the crystal 2M
It is characterized by containing gO.2Al 2 O 3 .5SiO 2 crystals (cordierite).
【0010】また本発明に係るセラミックス基板の製造
方法は、上記セラミックス基板の製造方法であって、M
gO、Al2 O3 、SiO2 、B2 O3 及びR2 O(R
はアルカリ金属を示す)からなるガラス粉末と、Al2
O3 結晶粒を混合して、800℃以上1000℃未満の
温度範囲で焼成することを特徴としている。A method of manufacturing a ceramic substrate according to the present invention is the above-mentioned method of manufacturing a ceramic substrate, wherein M
gO, Al 2 O 3 , SiO 2 , B 2 O 3 and R 2 O (R
Is an alkali metal), and a glass powder consisting of Al 2
It is characterized in that O 3 crystal grains are mixed and fired in a temperature range of 800 ° C. or higher and lower than 1000 ° C.
【0011】[0011]
【作用】上記した構成に係るガラスと結晶とからなるセ
ラミックス基板において、前記ガラスはMgO−Al2
O3 −SiO2 −B2 O3 −R2 O系ガラス(Rはアル
カリ金属を示す)からなり、前記結晶はコージェライト
を含有しており、ガラスの軟化温度が720℃以下にな
り、気孔率が減少してち密化し、熱膨張係数がシリコン
基板に近く、比誘電率が小さく、坑折強度、耐湿性、耐
水性等に優れたセラミックス基板となる。また、前記セ
ラミックス基板は、軟化点が低いため、800℃以上1
000℃以下の焼成によっても上記特性を有するものが
得られ、AgやCu等を回路配線に使用することが可能
なセラミックス基板となる。In the ceramic substrate composed of glass and crystals having the above structure, the glass is MgO--Al 2
It is composed of O 3 —SiO 2 —B 2 O 3 —R 2 O type glass (R is an alkali metal), the crystal contains cordierite, the softening temperature of the glass is 720 ° C. or less, and the pores are The ceramic substrate has a reduced coefficient and becomes dense, has a thermal expansion coefficient close to that of a silicon substrate, has a small relative dielectric constant, and is excellent in folding strength, moisture resistance, water resistance, and the like. In addition, since the ceramic substrate has a low softening point, it is 800 ° C or higher.
A ceramic substrate having the above characteristics can be obtained by firing at 000 ° C. or lower, and a ceramic substrate can be formed using Ag, Cu, or the like for circuit wiring.
【0012】また上記したセラミックス基板の製造方法
によれば、MgO、Al2 O3 、SiO2 、B2 O3 及
びR2 O(Rはアルカリ金属を示す)からなるガラス粉
末と、Al2 O3 結晶粒を混合して、800℃以上10
00℃未満の温度範囲で焼成するので、前記セラミック
ス基板中にコージェライトが析出し、ガラスセラミック
スの気孔率が減少してち密化し、前記した種々の優れた
特性を有するセラミックス基板が製造される。According to the above-mentioned method for manufacturing a ceramic substrate, a glass powder made of MgO, Al 2 O 3 , SiO 2 , B 2 O 3 and R 2 O (R represents an alkali metal) and Al 2 O. Mixing 3 crystal grains, 800 ℃ or more 10
Since firing is performed in a temperature range of less than 00 ° C., cordierite is precipitated in the ceramic substrate, the porosity of the glass ceramic is reduced and the glass ceramic is densified, and the ceramic substrate having various excellent characteristics described above is manufactured.
【0013】なお、前記セラミックス基板の製造におけ
る前記ガラス粉末の組成に関しては、MgOが30wt
%を超えると軟化温度が高くなりち密化が不十分になる
とともに比誘電率が大きくなり、またMgOが10wt
%未満ではコージェライトが析出せず熱膨張係数が大き
くなる。Al2 O3 が20wt%を超えると軟化温度が
高くなり、1000℃以下の焼成温度ではち密化が不充
分となり抗折強度が小さくなり、またAl2 O3 が5w
t%未満ではコージェライトが析出せず熱膨張係数が大
きくなる。SiO2 が55wt%を超えると軟化温度が
高くなり、1000℃以下の焼成温度ではち密化が不十
分となり抗折強度が小さくなり、またSiO2 が40w
t%未満では比誘電率と熱膨張率が大きくなる。B2 O
3 が20wt%を超えるとガラスの耐水性が低下し、ま
たガラスの製造過程で分相するために組成が不均一にな
り、またB2 O3 が10wt%未満では軟化強度が高く
なり、1000℃以下の焼成温度ではち密化が不充分と
なり抗折強度が小さくなる。アルカリ金属は、MgO、
Al2 O3 、SiO2 及びB2 O3 と相互に作用し、特
にB2 O3 との相乗作用により軟化温度が低下するが、
5wt%を超えると耐水性が劣化する。Regarding the composition of the glass powder in the production of the ceramic substrate, MgO is 30 wt.
%, The softening temperature becomes high, the densification becomes insufficient, the relative dielectric constant becomes large, and the MgO content is 10 wt.
If it is less than%, cordierite does not precipitate and the coefficient of thermal expansion increases. When Al 2 O 3 exceeds 20 wt%, the softening temperature becomes high, and at a firing temperature of 1000 ° C. or less, the densification becomes insufficient and the bending strength becomes small, and Al 2 O 3 is 5 w.
If it is less than t%, cordierite does not precipitate and the coefficient of thermal expansion increases. SiO 2 is high and the softening temperature exceeds 55 wt%, the bending strength is reduced becomes insufficient densification at the firing temperature of 1000 ° C. or less and SiO 2 is 40w
If it is less than t%, the relative dielectric constant and the thermal expansion coefficient increase. B 2 O
When 3 exceeds 20 wt%, the water resistance of the glass decreases, and the composition becomes non-uniform due to phase separation in the glass manufacturing process. When B 2 O 3 is less than 10 wt%, the softening strength increases, and 1000 If the firing temperature is below ℃, the densification will be insufficient and the bending strength will be reduced. The alkali metal is MgO,
It interacts with Al 2 O 3 , SiO 2 and B 2 O 3, and especially the synergistic effect with B 2 O 3 lowers the softening temperature.
If it exceeds 5 wt%, the water resistance deteriorates.
【0014】従って、ガラス粉末材料の組成としては、
MgOが10〜30wt%、Al2O3 が5〜20wt
%、SiO2 が40〜55wt%、B2 O3 が10〜2
0wt%、アルカリ金属が0〜5wt%の範囲が好まし
く、さらにはMgOが10〜20wt%、Al2 O3 が
10〜20wt%、SiO2 が40〜55wt%、B2
O3 が10〜20wt%、アルカリ金属が1〜5wt%
の範囲がより好ましい。Therefore, the composition of the glass powder material is as follows:
10 to 30 wt% MgO, 5 to 20 wt% Al 2 O 3
%, SiO 2 is 40 to 55 wt%, B 2 O 3 is 10 to 2
The range of 0 wt% and 0 to 5 wt% of alkali metal is preferable, and further, 10 to 20 wt% of MgO, 10 to 20 wt% of Al 2 O 3 , 40 to 55 wt% of SiO 2 , and B 2
O 3 is 10 to 20 wt% and alkali metal is 1 to 5 wt%.
Is more preferable.
【0015】また、前記セラミックス基板の製造方法に
おいて、骨材の結晶としてAl2 O3 を選定したのは、
ガラスと骨材との相互作用によりコージェライトを析出
させ、セラミックス基板としての良好な特性(比誘電率
が7.0以下、熱膨張率が5.0〜6.0付近の値、焼
成温度が1000℃未満、抗折強度が20kgf/mm
2 以上)を得るためである。In the method of manufacturing a ceramic substrate, Al 2 O 3 is selected as the crystal of the aggregate.
Cordierite is deposited by the interaction between glass and aggregate, and good characteristics as a ceramic substrate (dielectric constant of 7.0 or less, thermal expansion coefficient of about 5.0 to 6.0, firing temperature of Less than 1000 ℃, bending strength is 20kgf / mm
2 or more).
【0016】原料中のガラスと結晶との混合割合につい
ては、得られるセラミックス基板の抗折強度を20kg
f/mm2 以上にするため、ガラスを60〜80wt
%、結晶を40〜20wt%の範囲で混合することが好
ましい。Regarding the mixing ratio of glass and crystals in the raw material, the bending strength of the obtained ceramic substrate is 20 kg.
60-80 wt% of glass to achieve f / mm 2 or more
%, And crystals are preferably mixed in the range of 40 to 20 wt%.
【0017】なお、ここで耐水性とは、ガラスが水に対
して溶解しない性質のことをいい、耐湿性とは、ガラス
の多孔質部分に染み込んだ液体が内層導体に影響(酸化
やマイグレーション)を与えない性質のことをいう。Here, the water resistance means a property that the glass does not dissolve in water, and the moisture resistance means that the liquid permeated into the porous portion of the glass affects the inner layer conductor (oxidation or migration). Refers to the property of not giving.
【0018】[0018]
【実施例】以下、本発明に係るセラミックス基板及びそ
の製造方法の実施例及び比較例を説明する。MgO、A
l2 O3 、SiO2 、B2 O3 及びR2 O(Rはアルカ
リ金属を示す)からなり、その平均粒径が0.1〜10
μmのガラス粉末と、Al2 O3 からなる平均粒径が
0.1〜10μmの結晶粒を表1に示した割合で混合し
た。EXAMPLES Examples and comparative examples of the ceramic substrate and the manufacturing method thereof according to the present invention will be described below. MgO, A
1 2 O 3 , SiO 2 , B 2 O 3 and R 2 O (R represents an alkali metal), and the average particle size is 0.1 to 10
A glass powder of μm and crystal grains of Al 2 O 3 having an average particle diameter of 0.1 to 10 μm were mixed in the ratio shown in Table 1.
【0019】次にこの混合物に有機バインダ、可塑剤及
び溶剤をそれぞれ適量添加し、混練して約10,000cps
のスラリとした。Next, an appropriate amount of an organic binder, a plasticizer and a solvent are added to this mixture, and the mixture is kneaded to about 10,000 cps.
It was a slurry.
【0020】次に前記スラリを用い、ドクターブレード
法によって0.2mm厚のシートに成形し、80℃で約
10分間乾燥させた。その後、このシートを10℃/m
inの速度で昇温させ、約900℃で30分間焼成し、
セラミックス基板の焼結体の製造を完了した。Next, using the slurry, a 0.2 mm thick sheet was formed by a doctor blade method and dried at 80 ° C. for about 10 minutes. Then, this sheet is 10 ℃ / m
The temperature is raised at a rate of in and baked at about 900 ° C. for 30 minutes,
The manufacture of the sintered body of the ceramic substrate was completed.
【0021】次に、前記方法により製造されたセラミッ
クス基板にコージェライト結晶が析出していることをX
線回折により確認した。さらに前記セラミックス基板の
気孔率、周波数1MHzにおける比誘電率、熱膨張係
数、抗折強度の値及び耐水性を測定した。気孔率はアル
キメデス法により測定し、比誘電率はインピーダンスア
ナライザにより測定した。熱膨張係数は接触式の線膨張
計により室温から350℃までの平均値を測定した。抗
折強度は3点曲げ試験により測定し、耐水性は煮沸水中
に一定期間試験片を保持し、その重量減少により評価し
た。耐湿性は薄板状サンプルの片面から水又は水蒸気を
接触させ、反対側における湿度の上昇により評価した。Next, it is confirmed that cordierite crystals are deposited on the ceramic substrate manufactured by the above method.
Confirmed by line diffraction. Further, the porosity of the ceramic substrate, the relative dielectric constant at a frequency of 1 MHz, the coefficient of thermal expansion, the value of bending strength and the water resistance were measured. The porosity was measured by the Archimedes method, and the relative dielectric constant was measured by an impedance analyzer. The thermal expansion coefficient was measured as an average value from room temperature to 350 ° C. by a contact type linear expansion meter. The bending strength was measured by a three-point bending test, and the water resistance was evaluated by reducing the weight of the test piece held in boiling water for a certain period. The moisture resistance was evaluated by bringing water or steam into contact with one surface of the thin plate sample and increasing the humidity on the opposite side.
【0022】[0022]
【表1の1】 [1 in Table 1]
【0023】[0023]
【表1の2】 [2 in Table 1]
【0024】表1からも明らかなように、実施例1〜2
4においては、焼成温度が1000℃以下でも充分にち
密化させることができ、比誘電率が小さく、坑折強度、
耐湿性、耐水性等に優れたセラミックス基板を製造でき
ることがわかる。As is clear from Table 1, Examples 1-2
In No. 4, even if the firing temperature is 1000 ° C. or less, it can be sufficiently densified, the relative dielectric constant is small, and the bending strength,
It can be seen that it is possible to manufacture a ceramic substrate having excellent moisture resistance and water resistance.
【0025】なお、内層導体が溶融しない温度範囲であ
れば、セラミックス基板の焼成温度が高いほど、ち密化
及び結晶化するので大きな抗折強度と小さな熱膨張係数
を得ることができる。In the temperature range in which the inner layer conductor is not melted, the higher the firing temperature of the ceramic substrate, the more dense and crystallized it is, so that a large bending strength and a small coefficient of thermal expansion can be obtained.
【0026】図1は、実施例6で得られたサンプルをX
線回折したときのX線回折強度のデータである。図1に
よりコージェライトが析出していることが確認できた。
さらに、TEM(透過電子顕微鏡)により観察したとこ
ろアルミナの表面からコージェライトが析出しているこ
とがわかった。FIG. 1 shows the sample obtained in Example 6 as X.
It is data of X-ray diffraction intensity when line-diffracted. From FIG. 1, it was confirmed that cordierite was precipitated.
Furthermore, observation with a TEM (transmission electron microscope) revealed that cordierite was precipitated from the surface of alumina.
【0027】比較例1は、特開平2−225338号公
報に開示された内容に基づいて試作した比較例で、Ag
やCuなどを内層するのに必要な温度範囲である900
℃以下の焼成では気孔率が充分に小さくならず、ち密化
しないため抗折強度が小さいことがわかる。比較例2で
は、ガラス材料のMgOの量が少ないため、コージェラ
イトが析出せず、気孔率が大きく抗折強度は小さくな
り、さらに耐湿性も悪いことがわかる。また、比較例3
では、ガラス材料のAl2 O3 の量が少ないため、コー
ジェライトが析出せず、気孔率が大きく抗折強度は小さ
くなり、さらに耐湿性も悪いことがわかる。比較例4で
は、ガラスに対する骨材の混合比が小さいため、抗折強
度が小さい。比較例5では、ガラス材料のK2 Oの量が
多いため、基板が変形し、さらに耐水性も悪い。比較例
6では、ガラス材料のB2 O3 の量が少ないため、気孔
率が大きく抗折強度は小さくなり、さらに耐湿性も悪
い。比較例7では、ガラス材料のB2 O3 の量が多いた
め、基板が変形し、さらに耐水性も悪い。比較例8は、
ガラスに対する骨材の混合比が大きいため、気孔率が大
きく抗折強度は小さくなり、さらに耐湿性も悪いことが
わかる。Comparative Example 1 is a comparative example prepared on the basis of the contents disclosed in Japanese Patent Laid-Open No. 2-225338, and is Ag.
900, which is the temperature range required for the inner layer of Cu, Cu, etc.
It can be seen that the firing strength is low because the porosity does not become sufficiently small and densification does not occur when firing at a temperature of not higher than 0 ° C. In Comparative Example 2, since the amount of MgO in the glass material is small, cordierite does not precipitate, the porosity is large, the bending strength is small, and the moisture resistance is also poor. In addition, Comparative Example 3
Then, since the glass material has a small amount of Al 2 O 3 , cordierite does not precipitate, the porosity is large, the bending strength is small, and the moisture resistance is poor. In Comparative Example 4, since the mixing ratio of the aggregate to the glass is small, the bending strength is small. In Comparative Example 5, since the glass material contained a large amount of K 2 O, the substrate was deformed and the water resistance was poor. In Comparative Example 6, since the amount of B 2 O 3 in the glass material is small, the porosity is large, the bending strength is small, and the moisture resistance is poor. In Comparative Example 7, since the glass material contained a large amount of B 2 O 3 , the substrate was deformed and the water resistance was poor. Comparative Example 8 is
It can be seen that since the mixing ratio of the aggregate to the glass is large, the porosity is large, the bending strength is small, and the moisture resistance is also poor.
【0028】[0028]
【発明の効果】以上詳述したように本発明に係るガラス
と結晶とからなるセラミックス基板にあっては、前記ガ
ラスはMgO−Al2 O3 −SiO2 −B2 O3 −R2
O系ガラス(Rはアルカリ金属を示す)からなり、前記
結晶はコージェライトを含有しており、ガラスの軟化温
度が720℃以下になり、気孔率が減少してち密化して
おり、熱膨張係数がシリコン基板に近く、比誘電率が小
さく、抗折強度、耐湿性、耐水性等に優れたセラミック
ス基板となる。また、前記セラミックス基板は、軟化点
が低いため、800℃以上1000℃以下の焼成によっ
ても上記特性を有するものを製造することができ、低融
点で低電気抵抗のAgやCu等を回路配線に有するセラ
ミックス基板を製造することができる。In the ceramic substrate made of glass and crystal according to the present invention as described in detail above, according to the present invention, the glass is MgO-Al 2 O 3 -SiO 2 -B 2 O 3 -R 2
It is made of O-based glass (R is an alkali metal), the crystal contains cordierite, the softening temperature of the glass becomes 720 ° C. or less, the porosity decreases and the density increases, and the coefficient of thermal expansion increases. Is close to a silicon substrate, has a small relative dielectric constant, and has excellent bending strength, moisture resistance, water resistance, and the like. Further, since the ceramic substrate has a low softening point, it is possible to manufacture the ceramic substrate having the above characteristics even by firing at 800 ° C. or higher and 1000 ° C. or lower, and Ag, Cu or the like having a low melting point and a low electric resistance is used for the circuit wiring. It is possible to manufacture a ceramic substrate having the same.
【0029】また本発明に係る前記セラミックス基板の
製造方法によれば、MgO、Al2O3 、SiO2 、B2
O3 及びR2 O(Rはアルカリ金属を示す)からなる
ガラス粉末と、Al2 O3 結晶粒を混合して、800℃
以上1000℃未満の温度範囲で焼成することにより、
前記セラミックス基板中にコージェライトを析出させ、
ガラスセラミックスの気孔率を減少させてち密化させ、
熱膨張係数がシリコン基板に近く、比誘電率が小さく、
抗折強度、耐湿性、耐水性等に優れたセラミックス基板
を製造することができる。According to the method for producing a ceramic substrate according to the present invention, MgO, Al 2 O 3 , SiO 2 , B 2
Glass powder consisting of O 3 and R 2 O (R represents an alkali metal) and Al 2 O 3 crystal grains are mixed, and the temperature is 800 ° C.
By firing in the temperature range above 1000 ° C.,
Depositing cordierite in the ceramic substrate,
It reduces the porosity of glass ceramics to make it denser,
The coefficient of thermal expansion is close to that of a silicon substrate and the relative permittivity is small,
It is possible to manufacture a ceramic substrate having excellent bending strength, moisture resistance, water resistance and the like.
【図1】実施例6で得られたサンプルをX線回折したと
きのX線回折強度のデータである。FIG. 1 is X-ray diffraction intensity data when the sample obtained in Example 6 was subjected to X-ray diffraction.
Claims (2)
板において、前記ガラスはMgO−Al2 O3 −SiO
2 −B2 O3 −R2 O系ガラス(Rはアルカリ金属を示
す)からなり、前記結晶は2MgO・2Al2 O3 ・5
SiO2 結晶を含有していることを特徴とするセラミッ
クス基板。1. In a ceramic substrate composed of glass and crystals, the glass is MgO—Al 2 O 3 —SiO.
It is made of 2- B 2 O 3 -R 2 O type glass (R represents an alkali metal), and the crystal is 2MgO · 2Al 2 O 3 · 5.
A ceramic substrate containing SiO 2 crystals.
3 及びR2 O(Rはアルカリ金属を示す)からなるガラ
ス粉末と、Al2 O3 結晶粒を混合して、800℃以上
1000℃未満の温度範囲で焼成することを特徴とする
請求項1記載のセラミックス基板の製造方法。2. MgO, Al 2 O 3 , SiO 2 , B 2 O
3. A glass powder composed of 3 and R 2 O (R represents an alkali metal) and Al 2 O 3 crystal grains are mixed and fired in a temperature range of 800 ° C. or higher and lower than 1000 ° C. 3. A method for manufacturing the ceramic substrate described above.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07161393A JP3149613B2 (en) | 1992-03-30 | 1993-03-30 | Ceramic substrate and method of manufacturing the same |
US08/219,549 US5498580A (en) | 1993-03-30 | 1994-03-29 | Ceramic substrate and a method for producing the same |
DE4411127A DE4411127A1 (en) | 1993-03-30 | 1994-03-30 | Ceramic substrate, and process for the production thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4-74118 | 1992-03-30 | ||
JP7411892 | 1992-03-30 | ||
JP07161393A JP3149613B2 (en) | 1992-03-30 | 1993-03-30 | Ceramic substrate and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0616470A true JPH0616470A (en) | 1994-01-25 |
JP3149613B2 JP3149613B2 (en) | 2001-03-26 |
Family
ID=26412728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07161393A Expired - Lifetime JP3149613B2 (en) | 1992-03-30 | 1993-03-30 | Ceramic substrate and method of manufacturing the same |
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JP (1) | JP3149613B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002111210A (en) * | 2000-09-28 | 2002-04-12 | Kyocera Corp | Wiring board and its manufacturing method |
JP2004256345A (en) * | 2003-02-25 | 2004-09-16 | Kyocera Corp | Low-temperature fired porcelain, its composition and wiring board |
-
1993
- 1993-03-30 JP JP07161393A patent/JP3149613B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002111210A (en) * | 2000-09-28 | 2002-04-12 | Kyocera Corp | Wiring board and its manufacturing method |
JP2004256345A (en) * | 2003-02-25 | 2004-09-16 | Kyocera Corp | Low-temperature fired porcelain, its composition and wiring board |
JP4540297B2 (en) * | 2003-02-25 | 2010-09-08 | 京セラ株式会社 | Low-temperature fired porcelain composition, low-temperature fired porcelain, and wiring board |
Also Published As
Publication number | Publication date |
---|---|
JP3149613B2 (en) | 2001-03-26 |
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