JPH06163943A - Fabrication of electronic device - Google Patents
Fabrication of electronic deviceInfo
- Publication number
- JPH06163943A JPH06163943A JP33345792A JP33345792A JPH06163943A JP H06163943 A JPH06163943 A JP H06163943A JP 33345792 A JP33345792 A JP 33345792A JP 33345792 A JP33345792 A JP 33345792A JP H06163943 A JPH06163943 A JP H06163943A
- Authority
- JP
- Japan
- Prior art keywords
- piece
- device piece
- bonding
- dummy
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子デバイスの構成片
同士を電圧印加によって静電接合させる電子デバイスの
製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic device in which constituent pieces of the electronic device are electrostatically joined to each other by applying a voltage.
【０００２】[0002]
【従来の技術】従来、半導体圧力センサを製造する場
合、例えば、次のような方法により製造している。先
ず、シリコンウェハ片１に所望の大きさの半導体圧力セ
ンサチップ２群を多数形成し、次に、図３に示したよう
に、各センサチップ２のダイヤフラム部２ａを下向きに
して、上記シリコンウェハ片１を、各チップ２に対応し
た台座５をなすガラス板片４に重ね合わせる。この後、
両者を接合させるため、シリコンウェハ片１の非接合面
側には陽電荷を印加し、ガラス板片４の非接合面側には
陰電荷を印加し、これらの印加電圧を４００〜６００Ｖ
程度としつつ、通常４００〜５００℃の加熱条件下で静
電接合（陽極接合）させている。2. Description of the Related Art Conventionally, when manufacturing a semiconductor pressure sensor, for example, it is manufactured by the following method. First, a large number of groups of semiconductor pressure sensor chips 2 of a desired size are formed on a silicon wafer piece 1, and then, as shown in FIG. 3, the diaphragm portion 2a of each sensor chip 2 faces downward, and the silicon wafer The piece 1 is superposed on the glass plate piece 4 forming the pedestal 5 corresponding to each chip 2. After this,
In order to bond the two, a positive charge is applied to the non-bonding surface side of the silicon wafer piece 1 and a negative charge is applied to the non-bonding surface side of the glass plate piece 4, and the applied voltage is 400 to 600V.
However, electrostatic bonding (anodic bonding) is usually performed under heating conditions of 400 to 500 ° C.
【０００３】この静電接合は、高温の加熱条件下で行わ
れるため、通常、ガラス板中に微量成分として含まれて
いる、陽イオン移動物質（例えば、Ｎａ+ ，Ｌｉ+ ，Ｂ
+ など）が高電圧の陰電極６側に引き付けられ、シリコ
ンウェハ片１とガラス板片４の接合境界面には、電気的
に負の状態が生じる。一方、シリコンウェハ片１側はプ
ラスに帯電されているので、両者の境界面は静電気力に
より強固に接触されるようになり、この力によって当該
境界面が化学的に結合されるようになって、上記静電接
合が行われるものと、考えられている。この静電接合の
際、上記ガラス板４中を移動した微量の陽イオン移動物
質やその化合物などによる析出物７が、例えば図４に示
したように、ガラス板片４の非接合面側に析出するよう
になる。Since this electrostatic bonding is carried out under a high temperature heating condition, it is usually a cation transfer substance (for example, Na + , Li + , B) contained as a trace component in the glass plate.
+ And the like) are attracted to the high voltage negative electrode 6 side, and an electrically negative state is generated at the bonding boundary surface between the silicon wafer piece 1 and the glass plate piece 4. On the other hand, since the silicon wafer piece 1 side is positively charged, the boundary surface between the two becomes firmly contacted by the electrostatic force, and this boundary surface chemically bonds the boundary surface. It is considered that the above electrostatic bonding is performed. At the time of this electrostatic bonding, a small amount of a cation transfer substance or its compound 7 that has moved in the glass plate 4 is deposited on the non-bonding surface side of the glass plate piece 4 as shown in FIG. 4, for example. It will start to precipitate.
【０００４】[0004]
【発明が解決しようとする課題】ところが、この静電接
合の後には、各センサチップ２および台座５を一体にし
て取り出すために、図５に示したように、ガラス板片４
の非接合面側にダイシングシート８を接着させて固定
し、この状態から、切断している。この場合、上記図４
に示したように、ガラス板片４の非接合面側に析出物７
が存在すると、ガラス板片４に対するダイシングシート
８の接着力が弱められ、切断時、センサチップ２や台座
５に加わる振動などの衝撃によって、ダイシングシート
８が剥離し、センサチップ２や台座５が飛散するなどの
トラブルが生じて、歩留りの低下を招くなどの問題があ
った。However, after this electrostatic bonding, in order to take out each sensor chip 2 and pedestal 5 as a unit, as shown in FIG.
The dicing sheet 8 is adhered and fixed to the non-bonding surface side of, and is cut from this state. In this case, FIG.
As shown in Fig. 7, the precipitates 7 are formed on the non-bonding surface side of the glass plate piece 4.
Is present, the adhesive force of the dicing sheet 8 to the glass plate piece 4 is weakened, and the dicing sheet 8 is peeled off by an impact such as vibration applied to the sensor chip 2 and the pedestal 5 at the time of cutting, and the sensor chip 2 and the pedestal 5 are Problems such as scattering occur, leading to a decrease in yield.
【０００５】本発明は、このような従来の実情に鑑みて
なされたもので、静電接合時、第２のデバイス片にダミ
ーデバイス片を設け、このダミーデバイス片側に析出物
を析出させることにより、第２のデバイス片側に析出物
が残留されないようにした電子デバイスの製造方法を提
供せんとするものである。The present invention has been made in view of such a conventional situation, and by providing a dummy device piece on the second device piece and depositing a precipitate on one side of the dummy device during electrostatic bonding. A second device is provided with a method for manufacturing an electronic device in which a deposit is prevented from remaining on one side of the second device.
【０００６】[0006]
【課題を解決するための手段】かゝる本発明の特徴は、
互いに重ね合わされた第１のデバイス片と第２のデバイ
ス片をその接合面で静電接合させる際、前記第１のデバ
イス片には陽電荷を印加すると共に、前記第２のデバイ
ス片の非接合面側には、当該第２のデバイス片と同一ま
たは同種材料からなるダミーデバイス片を重ね合わせ、
当該ダミーデバイス片側に陰電荷を印加し、加熱条件下
で静電接合させた後、当該ダミーデバイス片を除去する
ことにより、前記第２のデバイス片などに含有される陽
イオン移動物質やその化合物などによる析出物が当該第
２のデバイス片の非接合側に残留されないようにする電
子デバイスの製造方法にある。The features of the present invention are as follows.
When the first device piece and the second device piece that are superposed on each other are electrostatically bonded at the bonding surface, a positive charge is applied to the first device piece and the second device piece is not bonded. On the surface side, a dummy device piece made of the same or similar material as the second device piece is overlaid,
A cation transfer substance or a compound thereof contained in the second device piece or the like is obtained by applying a negative charge to one side of the dummy device and electrostatically bonding it under heating conditions, and then removing the dummy device piece. It is a method of manufacturing an electronic device that prevents deposits due to the above from remaining on the non-bonding side of the second device piece.
【０００７】[0007]
【作用】本発明では、静電接合時、析出物がダミーデバ
イス片側に析出される。そして、その後このダミーデバ
イス片は除去されるため、第２のデバイス片側に析出物
は殆ど残留されることになる。In the present invention, a deposit is deposited on one side of the dummy device during electrostatic bonding. Then, since this dummy device piece is removed thereafter, most of the deposit remains on the side of the second device piece.
【０００８】[0008]
【実施例】図１は、本発明に係る電子デバイスの製造方
法の一実施例になる一工程（静電接合工程）を示した概
略縦断面図である。図中、１１はダイヤフラム部１２ａ
を有する多数の半導体圧力センサチップ１２群が形成さ
れたシリコンウェハ片などからなる第１のデバイス片、
１４はこの第１のデバイス片１１に重ね合わされ、半導
体圧力センサチップ１２群の各チップ１２に対応した台
座１５をなすガラス板片などからなる第２のデバイス
片、２４はこの第２のデバイス片１４に重ね合わされた
ダミーデバイス片である。1 is a schematic vertical sectional view showing a step (electrostatic bonding step) according to an embodiment of a method for manufacturing an electronic device according to the present invention. In the figure, 11 is a diaphragm portion 12a.
A first device piece made of a silicon wafer piece or the like on which a large number of semiconductor pressure sensor chips 12 having
Reference numeral 14 is a second device piece which is superposed on the first device piece 11 and includes a glass plate piece or the like which forms a pedestal 15 corresponding to each chip 12 of the semiconductor pressure sensor chip 12 group, and 24 is the second device piece. 14 is a dummy device piece superimposed on 14.
【０００９】このダミーデバイス片２４としては、第２
のデバイス片１４などに含有される陽イオン移動物質
（例えば、ガラス板片の場合Ｎａ+ ，Ｌｉ+ ，Ｂ+ な
ど）が移動できる材料であればよく、この点からする
と、当該第２のデバイス片１４と同一または同種材料か
らなるものが好ましい。本例では第２のデバイス片１４
と同一のガラス板片としてある。As the dummy device piece 24, the second
Any material capable of migrating a cation transfer substance (for example, Na + , Li + , B +, etc. in the case of a glass plate piece) contained in the device piece 14 or the like of the second device is considered from this point. It is preferable that the piece 14 is made of the same material or the same material. In this example, the second device piece 14
Same as the glass plate piece.
【００１０】上記図１のような状態において、第１のデ
バイス片１１の非接合面側には陽電荷を印加し、ダミー
デバイス片２４の非接合面側には陰電荷を印加し、これ
らの印加電圧を４００〜６００Ｖ程度としつつ、通常４
００〜５００℃の加熱条件下で静電接合（陽極接合）さ
せる。In the state as shown in FIG. 1, a positive charge is applied to the non-bonding surface side of the first device piece 11 and a negative charge is applied to the non-bonding surface side of the dummy device piece 24. While the applied voltage is about 400 to 600 V, it is usually 4
Electrostatic bonding (anodic bonding) is performed under heating conditions of 00 to 500 ° C.
【００１１】そうすると、第２のデバイス片１４のガラ
ス板中の陽イオン移動物質は、ダミーデバイス片２４側
の高電圧の陰電極１６側に引き付けられ、第２のデバイ
ス片１４中を通り越して、図２に示したように、ダミー
デバイス片２４の非接合面側に達し、この部分におい
て、当該ダミーデバイス片２４からの陽イオン移動物質
と一緒になって、析出物１７として析出される。この
後、ダミーデバイス片２４を第２のデバイス片１４から
外したところ、当該第２のデバイス片１４側には、殆ど
析出物１７の残留はなかった。Then, the cation transfer substance in the glass plate of the second device piece 14 is attracted to the high-voltage negative electrode 16 side of the dummy device piece 24 side, passes through the second device piece 14, and As shown in FIG. 2, it reaches the non-bonding surface side of the dummy device piece 24, and is deposited as the precipitate 17 in this portion together with the cation transfer substance from the dummy device piece 24. After that, when the dummy device piece 24 was removed from the second device piece 14, almost no precipitate 17 remained on the second device piece 14 side.
【００１２】さらに、この後、第２のデバイス片１４の
非接合面側にダイシングシートを接着させてダイジング
（切断）を行うわけであるが、析出物の殆ど残留がない
ため、ダイシングシートとの強い接着力が得られた。こ
の結果、センサチップ１２や台座１５などの飛散もな
く、歩留りのよい製造が可能であった。もちろん、析出
物の不存在により、設備や出来上がった半導体圧力セン
サの析出物による汚染も防止される。Further, after this, a dicing sheet is adhered to the non-bonding surface side of the second device piece 14 to perform dicing (cutting). A strong adhesive force was obtained. As a result, the sensor chip 12, the pedestal 15 and the like were not scattered, and the manufacturing with a good yield was possible. Of course, the absence of deposits also prevents contamination of the equipment and the finished semiconductor pressure sensor with deposits.
【００１３】なお、上記実施例では、第１のデバイス片
１１がダイヤフラム部１２ａを有する多数の半導体圧力
センサチップ１２群が形成されたシリコンウェハ片、第
２のデバイス片１４が半導体圧力センサチップ１２に対
応した台座１５をなすガラス板片、ダミーデバイス片２
４が第２のデバイス片１４と同一のガラス板片であった
が、本発明は、これに限定されるものではない。他の電
子デバイスでも、静電接合を行う場合で、本発明と同様
の問題があるときには、もちろん適用することができ
る。In the above embodiment, the first device piece 11 is a silicon wafer piece in which a large number of semiconductor pressure sensor chips 12 having the diaphragm portion 12a are formed, and the second device piece 14 is the semiconductor pressure sensor chip 12. Glass plate piece and dummy device piece 2 forming the pedestal 15 corresponding to
Although 4 is the same glass plate piece as the second device piece 14, the present invention is not limited to this. It can be applied to other electronic devices when electrostatic bonding is performed and the same problem as in the present invention occurs.
【００１４】[0014]
【発明の効果】以上の説明から明らかなように本発明に
係る電子デバイスの製造方法によれば、次のような優れ
た効果が得られる。 （１）静電接合時、第２のデバイス片の非接合面側にダ
ミーデバイス片を設け、このダミーデバイス片側に析出
物を析出させ、その後、このダミーデバイス片を除去す
る方法であるため、第２のデバイス片側には析出物の残
留が殆どなくなる。この結果、例えば第２のデバイス片
とダイシングシートとの強固な接着が得られ、ダイジン
グの際におけるセンサチップなどの飛散などが効果的に
防止でき、歩留りのよい製造が可能となる。 （２）また、析出物がダミーデバイス片と共に完全に除
去される方法であるため、析出物がその後の設備や電子
デバイス側が持ち込まれて、これらを汚染することもな
くなるため、設備の保守・管理が容易になる他、製品の
影響を最小限に抑えられ、安定性が高く、信頼性に優れ
たセンサデバイスなどが得られる。As is apparent from the above description, the method of manufacturing an electronic device according to the present invention has the following excellent effects. (1) During electrostatic bonding, a dummy device piece is provided on the non-bonding surface side of the second device piece, a deposit is deposited on this dummy device piece side, and then this dummy device piece is removed. Almost no precipitate remains on one side of the second device. As a result, for example, firm adhesion between the second device piece and the dicing sheet can be obtained, scattering of the sensor chips and the like during dicing can be effectively prevented, and manufacturing with high yield becomes possible. (2) In addition, since the deposit is completely removed together with the dummy device piece, the deposit is not brought into the facility or electronic device side later and does not contaminate them. In addition, it is possible to obtain a sensor device with high stability and high reliability, which minimizes the influence of the product.
【図１】本発明に係る電子デバイスの製造方法の一実施
例になる静電接合工程を示した概略縦断面図である。FIG. 1 is a schematic vertical cross-sectional view showing an electrostatic bonding step according to an embodiment of a method for manufacturing an electronic device according to the present invention.
【図２】図１の製造方法による静電接合後、第２のデバ
イス片からダミーデバイス片を除去する途中を示した部
分拡大縦断面図である。FIG. 2 is a partially enlarged vertical cross-sectional view showing a process of removing a dummy device piece from the second device piece after the electrostatic bonding by the manufacturing method of FIG.
【図３】従来の電子デバイスの製造方法に係る静電接合
工程を示した概略縦断面図である。FIG. 3 is a schematic vertical sectional view showing an electrostatic bonding step according to a conventional method for manufacturing an electronic device.
【図４】図３の製造方法による静電接合後の第２のデバ
イス片における析出物の析出状態を示した部分拡大縦断
面図である。FIG. 4 is a partially enlarged vertical cross-sectional view showing a deposited state of deposits on the second device piece after electrostatic bonding by the manufacturing method of FIG.
【図５】従来の電子デバイスの製造方法に係るダイジン
グ工程を示した概略縦断面図である。FIG. 5 is a schematic vertical sectional view showing a dicing process according to a conventional method for manufacturing an electronic device.
１１ 第１のデバイス片 １２ 半導体圧力センサチップ １２ａ ダイヤフラム部 １４ 第２のデバイス片 １５ 台座 １６ 陰電極 １７ 析出物 ２４ ダミーデバイス片 11 First Device Piece 12 Semiconductor Pressure Sensor Chip 12a Diaphragm Section 14 Second Device Piece 15 Pedestal 16 Cathode Electrode 17 Precipitate 24 Dummy Device Piece
Claims (2)
と第２のデバイス片をその接合面で静電接合させる際、
前記第１のデバイス片には陽電荷を印加すると共に、前
記第２のデバイス片の非接合面側には、当該第２のデバ
イス片と同一または同種材料からなるダミーデバイス片
を重ね合わせ、当該ダミーデバイス片側に陰電荷を印加
し、加熱条件下で静電接合させた後、当該ダミーデバイ
ス片を除去することにより、前記第２のデバイス片など
に含有される陽イオン移動物質やその化合物などによる
析出物が当該第２のデバイス片の非接合側に残留されな
いようにすることを特徴とする電子デバイスの製造方
法。1. When electrostatically bonding a first device piece and a second device piece, which are superposed on each other, at their bonding surfaces,
A positive charge is applied to the first device piece, and a dummy device piece made of the same or similar material as the second device piece is superposed on the non-bonding surface side of the second device piece. A negative charge is applied to one side of the dummy device, electrostatic bonding is performed under heating conditions, and then the dummy device piece is removed to obtain a cation transfer substance or its compound contained in the second device piece or the like. The method for producing an electronic device is characterized in that the deposit due to is not left on the non-bonding side of the second device piece.
力センサチップ群が形成されたウェハ片で、前記第２の
デバイス片が前記半導体圧力センサチップ群の各チップ
に対応した台座をなすガラス板片であることを特徴とす
る請求項１記載の電子デバイスの製造方法。2. A glass piece in which the first device piece is a wafer piece on which a large number of semiconductor pressure sensor chip groups are formed, and the second device piece forms a pedestal corresponding to each chip of the semiconductor pressure sensor chip group. It is a plate piece, The manufacturing method of the electronic device of Claim 1 characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33345792A JPH06163943A (en) | 1992-11-19 | 1992-11-19 | Fabrication of electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33345792A JPH06163943A (en) | 1992-11-19 | 1992-11-19 | Fabrication of electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06163943A true JPH06163943A (en) | 1994-06-10 |
Family
ID=18266299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33345792A Pending JPH06163943A (en) | 1992-11-19 | 1992-11-19 | Fabrication of electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06163943A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008510315A (en) * | 2004-08-18 | 2008-04-03 | コーニング インコーポレイテッド | Strained semiconductor structure on insulator and method for making strained semiconductor structure on insulator |
| WO2009104329A1 (en) * | 2008-02-21 | 2009-08-27 | セイコーインスツル株式会社 | Method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus and radio-controlled clock |
| JP2011041069A (en) * | 2009-08-12 | 2011-02-24 | Seiko Instruments Inc | Method for manufacturing package, method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic equipment, and radio-controlled timepiece |
| JP2012033713A (en) * | 2010-07-30 | 2012-02-16 | Kyocera Corp | Cavitary semiconductor substrate structure, and manufacturing methods of cavitary semiconductor substrate structure and semiconductor device |
-
1992
- 1992-11-19 JP JP33345792A patent/JPH06163943A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008510315A (en) * | 2004-08-18 | 2008-04-03 | コーニング インコーポレイテッド | Strained semiconductor structure on insulator and method for making strained semiconductor structure on insulator |
| WO2009104329A1 (en) * | 2008-02-21 | 2009-08-27 | セイコーインスツル株式会社 | Method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus and radio-controlled clock |
| JP2009200778A (en) * | 2008-02-21 | 2009-09-03 | Seiko Instruments Inc | Manufacturing method for piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled clock |
| US8448311B2 (en) | 2008-02-21 | 2013-05-28 | Seiko Instruments Inc. | Method of manufacturing a piezoelectric vibrator |
| JP2011041069A (en) * | 2009-08-12 | 2011-02-24 | Seiko Instruments Inc | Method for manufacturing package, method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic equipment, and radio-controlled timepiece |
| JP2012033713A (en) * | 2010-07-30 | 2012-02-16 | Kyocera Corp | Cavitary semiconductor substrate structure, and manufacturing methods of cavitary semiconductor substrate structure and semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4722130A (en) | Method of manufacturing a semiconductor device | |
| US5041900A (en) | Semiconductor device having sealed electrical feedthrough | |
| US5264075A (en) | Fabrication methods for silicon/glass capacitive absolute pressure sensors | |
| JPH06163943A (en) | Fabrication of electronic device | |
| JP2003326500A (en) | Sheet substrate structure for wafer process and method of manufacturing mems element using the sheet substrate | |
| JPH08279444A (en) | Microstructure and manufacturing method thereof | |
| JPS61280660A (en) | Manufacture of semiconductor device | |
| JPS5898983A (en) | Manufacture of semiconductor pressure transducer | |
| JPS644339B2 (en) | ||
| JPS6156434A (en) | Dicing method for semiconductor substrate | |
| JPS63143851A (en) | Semiconductor device | |
| McCutcheon et al. | Advanced processes and materials for temporary wafer bonding | |
| RU1494376C (en) | Method of diffusion welding of semiconductors or metals with alkaline glasses | |
| JPH0419712B2 (en) | ||
| JPH0194651A (en) | Semiconductor device and manufacture thereof | |
| EP0507813A1 (en) | Semiconductor cavity device with electric lead | |
| JPS62156265A (en) | Formation of crystalline thin film | |
| JPH0194640A (en) | Semiconductor device and manufacture thereof | |
| JPS6010672A (en) | Manufacture of semiconductor device | |
| JPH03142854A (en) | Dielectric isolated substrate and manufacture thereof | |
| JPH0523060B2 (en) | ||
| JPS5940542A (en) | Manufacture of semiconductor device | |
| JPH0194652A (en) | Semiconductor device and manufacture thereof | |
| JPH0350754A (en) | Isolating method of semiconductor chip | |
| JPS6085545A (en) | Method for formation of bump electrode for semiconductor element |