JPS62156265A - Formation of crystalline thin film - Google Patents
Formation of crystalline thin filmInfo
- Publication number
- JPS62156265A JPS62156265A JP60295673A JP29567385A JPS62156265A JP S62156265 A JPS62156265 A JP S62156265A JP 60295673 A JP60295673 A JP 60295673A JP 29567385 A JP29567385 A JP 29567385A JP S62156265 A JPS62156265 A JP S62156265A
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystalline thin
- thin film
- piezoelectric element
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000010408 film Substances 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000001771 vacuum deposition Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000005498 polishing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、結晶性薄膜の成膜方法に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for forming a crystalline thin film.
［従来の技術］
従来、例えば厖動ジャイロ等に使用される断面が方形を
なす柱状体の振動子は基盤部材（以下振動子本体という
）の各側面に結晶性薄膜（以下、圧電素子膜という）が
形成され、圧電素子膜が励振用や検知用として用いられ
る。[Prior Art] Conventionally, a columnar vibrator with a rectangular cross section, used for example in a movable gyro, has a crystalline thin film (hereinafter referred to as piezoelectric element film) on each side of a base member (hereinafter referred to as the vibrator body). ) is formed, and the piezoelectric element film is used for excitation and detection.
この種の圧電素子膜１は第３図に示すごとく、圧電膜３
を下部電極金属膜４と下部電極金属膜５とでサンドイッ
チ状に挟んで構成し、例えばエリンバ−１石英ガラス等
の材料を用いた振動子本体２上に成膜される。This type of piezoelectric element film 1 has a piezoelectric film 3 as shown in FIG.
is sandwiched between a lower electrode metal film 4 and a lower electrode metal film 5, and is formed on the vibrator main body 2 using a material such as Elinvar-1 quartz glass.
その成膜方法としては、先ず振動子本体２の側面をＳｉ
Ｃ、タングステンカーバイド等の研磨剤で研磨を行い研
磨面６にアルミ材等を用いた下部電極金属膜４を真空蒸
着して、次いで下部電極金属膜４上に圧電膜３ （Ｚｎ
Ｏ等）をスパッタリング法等により重畳しさらに、その
上に上部電極５（アルミ材等）を真空蒸着して圧電素子
膜ｌを作る。As for the film forming method, first, the side surface of the vibrator body 2 is coated with Si.
A lower electrode metal film 4 made of aluminum or the like is vacuum-deposited on the polished surface 6 by polishing with an abrasive such as carbon or tungsten carbide, and then a piezoelectric film 3 (Zn) is deposited on the lower electrode metal film 4.
O, etc.) are superimposed by sputtering or the like, and then an upper electrode 5 (aluminum material, etc.) is vacuum-deposited thereon to form a piezoelectric element film 1.
しかしながら、上記従来の成膜方法においては、振動子
本体２側面の研磨工程の過程で研磨剤などの異物が研磨
面６に埋設され、第２図に示すように突起物７として研
磨面６上に突出した状態を呈することが検査工程におい
て判明した。However, in the conventional film forming method described above, foreign substances such as abrasives are buried in the polishing surface 6 during the polishing process of the side surface of the vibrator body 2, and as projections 7 are formed on the polishing surface 6 as shown in FIG. During the inspection process, it was found that the condition was prominent.
突起物７を除去するため、再研磨あるいは工ッチング処
理等の手段を施すと、突起物７のみならず振動子本体２
の研磨面６まで影響が及び、研磨面６が粗面になったり
、更には振動子本体２自体の寸法が変化して、寸法誤差
につながり振動ジャイロとしての性能の低下をまねくこ
とになる。In order to remove the protrusions 7, when re-polishing or processing is performed, not only the protrusions 7 but also the vibrator body 2 are removed.
The effect extends to the polished surface 6 of the vibration gyroscope, causing the polished surface 6 to become rough, and furthermore, the dimensions of the vibrator main body 2 itself to change, leading to dimensional errors and deterioration of the performance of the vibrating gyroscope.
又、再研磨、エツチング等の手段を取らず、すなわち振
動子本体２の研磨面６より突起物７を除去せずに、その
ままの状態で研磨面６上に、圧電素子膜ｌを形成すると
第３図に示すように圧電膜３が突起物７を核としてボー
ル状に成長した膜８が形成され、さらに膜８の周囲に溝
１１が形成される。このようなボール状に成長した膜８
は厚さ方向に電圧を印加すると正常に形成された圧電膜
３に比べて著しく絶縁破壊電圧が低下してしまう。Moreover, if the piezoelectric element film l is formed on the polished surface 6 in that state without taking any measures such as re-polishing or etching, that is, without removing the protrusions 7 from the polished surface 6 of the vibrator body 2, As shown in FIG. 3, a film 8 is formed in which the piezoelectric film 3 is grown into a ball shape using the protrusion 7 as a nucleus, and a groove 11 is further formed around the film 8. Film 8 grown in a ball shape like this
When a voltage is applied in the thickness direction, the dielectric breakdown voltage is significantly lower than that of a normally formed piezoelectric film 3.
従って、ボール状に成長した膜８を有する圧電素子膜１
は上下部電極に金属膜４．５間に所定の電圧を〔ワ加す
ると絶縁破壊電圧の低下による絶縁破壊を起こし振動子
として使用が不可能となる。Therefore, the piezoelectric element film 1 having the film 8 grown in a ball shape
When a predetermined voltage is applied between the upper and lower electrodes and the metal film 4.5, dielectric breakdown occurs due to a drop in dielectric breakdown voltage, making it impossible to use it as a vibrator.
［発明が解決しようとする問題点］
本発明は上記のような問題点を改善する目的でなされた
ものであって、振動子本体２の表面研磨後、従来行われ
ていた表面の検査及び再研磨といった作業を不要とし、
成膜条件の変更のみで、上記問題点を解決しうる成膜方
法を提供するものである。[Problems to be Solved by the Invention] The present invention has been made for the purpose of improving the above-mentioned problems, and after polishing the surface of the vibrator body 2, the conventional surface inspection and Eliminates the need for work such as polishing,
The present invention provides a film forming method that can solve the above problems simply by changing film forming conditions.
［問題点を解決するための手段］
本発明によれば、例えば撮動ジャイロ等に使用される断
面が方形をなす柱状体の振動子本体側面に圧電素子膜を
形成する成膜方法において、振動子本体側面の研暦面上
に例えば２酸化硅稟（Ｓ ｉ ０２ ）のようなアモ
ルファス膜を形成し、更にその上に圧電素子膜を被着形
成する。[Means for Solving the Problems] According to the present invention, in a film forming method for forming a piezoelectric element film on the side surface of a vibrator main body of a columnar body having a rectangular cross section used, for example, in an imaging gyro, vibration An amorphous film such as silica dioxide (S i 02 ) is formed on the polished surface of the side surface of the child body, and a piezoelectric element film is further deposited thereon.
このような成膜方法を用いることで、アモルファス膜上
に被着形成された圧電素子膜の電気的特性が向上し、更
に従来工程の研磨面の検査及び再研磨といった工程を不
要とし、歩留りのよい量産向きの成膜方法を提供する。By using such a film formation method, the electrical characteristics of the piezoelectric element film deposited on the amorphous film are improved, and the process of inspecting and repolishing the polished surface of the conventional process is no longer necessary, which improves the yield. To provide a film forming method suitable for mass production.
［実施例］
次に、本発明の一実施例である撮動ジャイロの圧電素子
成膜方法を図面に基づいて説明する。なお、図面は振動
子本体の一側面の表面部分を断面にした原理を示すため
の模式図であって、第１図が本発明の成膜方法による実
施例の断面状態図を示す。すなわち、第２図に示したよ
うに突起物７が埋設され、その一部が突出状態にある振
動子本体２！１面の表面上に、例えば２酸化硅素（Ｓｉ
０２）のアモルファス（非晶質）膜をスパッタリング法
等により形成し、このアモルファス膜上に下部電極金属
膜４を設け、その上に圧電膜３を形成させ、更にその上
に上部電極金属膜５を設けて圧電素子膜ｌを形成する。[Example] Next, a method for forming a piezoelectric element film for an imaging gyroscope, which is an example of the present invention, will be described based on the drawings. The drawings are schematic diagrams showing the principle in which the surface portion of one side of the vibrator main body is shown in cross section, and FIG. 1 shows a cross-sectional state diagram of an embodiment according to the film forming method of the present invention. That is, as shown in FIG. 2, for example, silicon dioxide (Si
02) is formed by a sputtering method or the like, a lower electrode metal film 4 is provided on this amorphous film, a piezoelectric film 3 is formed on it, and an upper electrode metal film 5 is formed on it. is provided to form the piezoelectric element film l.
なお、上下部電極金属膜４，５及び圧電膜３の成膜方法
は従来と同じであって例えば真空蒸着方法及びスパッタ
リング法等を用いる。The methods for forming the upper and lower electrode metal films 4 and 5 and the piezoelectric film 3 are the same as conventional methods, such as vacuum evaporation and sputtering.
本発明の成膜方法は以上のような手順で行ゎれるので、
圧電素子膜ｌはアモルファス膜９を介して振動子本体２
に形成される。振動子本体２上の突起物７を被包したア
モルファス膜９の表面部分は、滑らかな膨出部ｌＯとな
って形成されるので、振動子本体２０側面はアモルファ
ス膜９により平担化された表面状態となる。従って、ア
モルファス膜９上に下部電極金属膜４を介して形成され
る圧電膜３は、もはや第３図に示したボール状に成長し
た股８および満１１を有せず、第１図の如くばば平担な
表面状態を呈する。The film forming method of the present invention can be carried out by the steps described above.
The piezoelectric element film l is connected to the vibrator body 2 via the amorphous film 9.
is formed. Since the surface portion of the amorphous film 9 covering the protrusion 7 on the vibrator body 2 is formed as a smooth bulge lO, the side surface of the vibrator body 20 is flattened by the amorphous film 9. It becomes a surface state. Therefore, the piezoelectric film 3 formed on the amorphous film 9 via the lower electrode metal film 4 no longer has the ball-shaped crotches 8 and 11 shown in FIG. 3, but as shown in FIG. It has a flat surface.
それ故に、その上に被着される上部電極金属膜５の表面
も圧電１５Ｉ３上に沿って平滑に形成され、絶縁破壊電
圧特性の向上した圧電素子膜ｌが得られる。Therefore, the surface of the upper electrode metal film 5 deposited thereon is also formed smoothly along the piezoelectric layer 15I3, resulting in a piezoelectric element film l with improved dielectric breakdown voltage characteristics.
なお、上記アモルファス膜の代りに接着剤等を使用した
成膜方法も考えられるが、接着層の厚さを均一に調整す
ることが困難であり、かつ接着層上に貼付される圧電素
子膜１の位置を合わせることが容易でない等、製造上の
問題があるほか、接着剤自体が温度上昇に伴い振動伝達
力が小さくなるといった温度特性が振動状態に及ぼす影
響が大となったり、あるいは振動エネルギーの内部損失
が大きい等特性上の問題点も多々あり好ましくない。そ
れ故、本実施例ではアモルファス膜を使用することで、
接着剤で起こり得る上記問題点をも同時に解決し得る。Note that a film forming method using an adhesive or the like instead of the amorphous film described above can be considered, but it is difficult to adjust the thickness of the adhesive layer uniformly, and the piezoelectric element film 1 attached on the adhesive layer is difficult to form. In addition to manufacturing problems such as not being easy to align the positions of It is not preferable because it has many problems in terms of characteristics, such as a large internal loss. Therefore, by using an amorphous film in this example,
The above-mentioned problems that may occur with adhesives can also be solved at the same time.
本実施例では振動子本体２の一側面についてのみ模式図
を用いて説明したが、他の複数の側面についても同様の
方法で成膜させ得ることはいうまでもない。In this embodiment, only one side surface of the vibrator main body 2 has been described using a schematic diagram, but it goes without saying that the film can be formed on other plurality of side surfaces by the same method.
なお、本実施例では、結晶性薄膜の成膜方法として、Ｓ
動ジャイロに用いる圧電素子膜について述べたが、その
他の窒化アルミ等の成膜方法にも利用できる。In this example, S is used as the method for forming the crystalline thin film.
Although the piezoelectric element film used in a dynamic gyro has been described, it can also be used in other film forming methods such as aluminum nitride.
［発明の効果］
以上の説明から明らかなように、突起物が振動子本体表
面上に存在しても、アモルファス膜を被着することで、
その上に形成される圧電素子膜の電気的特性、特に絶縁
破壊電圧特性を向上でき、しかも振動子本体の表面研」
、後に従来行われていた表面の検査及び再研霞といった
作業工程をも不要にできる。[Effects of the Invention] As is clear from the above explanation, even if there are protrusions on the surface of the vibrator main body, by covering the amorphous film,
The electrical properties of the piezoelectric element film formed thereon, especially the dielectric breakdown voltage properties, can be improved, and the surface of the vibrator body can be polished.
This also eliminates the need for surface inspection and re-sharpening, which were conventionally performed later.
従って、歩留りの向上、製品の均−化及び量産性の向上
環の効果が期待できるとともにコストの低減が計れる。Therefore, the effects of improved yield, uniformity of products, and improved mass productivity can be expected, as well as cost reduction.
第１図は本発明にがかる成膜方法の手順を断面にて示し
た模式図、第２図は振動子本体−側面の成膜前の状態を
断面図で示した模式図、第３図は従来例における成膜後
の状態を断面図で示した模式図である。
ｌ：圧電素子膜 、 ２：振動子本体
６；研磨面 、 ９：アモルファス膜。Fig. 1 is a schematic cross-sectional view showing the steps of the film forming method according to the present invention, Fig. 2 is a cross-sectional view showing the state of the vibrator main body and side surface before film formation, and Fig. FIG. 2 is a schematic cross-sectional view showing a state after film formation in a conventional example. l: piezoelectric element film, 2: vibrator body 6; polished surface, 9: amorphous film.
Claims (1)
基盤部材上に結晶性薄膜を成膜する方法において、上記
基盤部材の研磨面と上記結晶性薄膜との間にアモルファ
ス膜を介在させることを特徴とした結晶性薄膜の成膜方
法。1) A method of forming a crystalline thin film on an underlying base member by vacuum evaporation, sputtering, etc., characterized in that an amorphous film is interposed between the polished surface of the base member and the crystalline thin film. A method for forming crystalline thin films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60295673A JPS62156265A (en) | 1985-12-27 | 1985-12-27 | Formation of crystalline thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60295673A JPS62156265A (en) | 1985-12-27 | 1985-12-27 | Formation of crystalline thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62156265A true JPS62156265A (en) | 1987-07-11 |
Family
ID=17823705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60295673A Pending JPS62156265A (en) | 1985-12-27 | 1985-12-27 | Formation of crystalline thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62156265A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226964A (en) * | 1992-02-14 | 1993-09-03 | Matsushita Electric Ind Co Ltd | Crystal vibrator and its processing method |
| JP2005244184A (en) * | 2004-01-28 | 2005-09-08 | Toshiba Corp | Thin-film piezoelectric element and method of manufacturing the thin-film piezoelectric element |
| US7770274B2 (en) | 2004-01-28 | 2010-08-10 | Kabushiki Kaisha Toshiba | Piezoelectric thin film device and method for manufacturing the same |
-
1985
- 1985-12-27 JP JP60295673A patent/JPS62156265A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226964A (en) * | 1992-02-14 | 1993-09-03 | Matsushita Electric Ind Co Ltd | Crystal vibrator and its processing method |
| JP2005244184A (en) * | 2004-01-28 | 2005-09-08 | Toshiba Corp | Thin-film piezoelectric element and method of manufacturing the thin-film piezoelectric element |
| US7770274B2 (en) | 2004-01-28 | 2010-08-10 | Kabushiki Kaisha Toshiba | Piezoelectric thin film device and method for manufacturing the same |
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