JPH06163206A - Thermistor for high temperature and manufacturings method thereof - Google Patents
Thermistor for high temperature and manufacturings method thereofInfo
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- JPH06163206A JPH06163206A JP31359092A JP31359092A JPH06163206A JP H06163206 A JPH06163206 A JP H06163206A JP 31359092 A JP31359092 A JP 31359092A JP 31359092 A JP31359092 A JP 31359092A JP H06163206 A JPH06163206 A JP H06163206A
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- thermistor
- high temperature
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、３００℃以上の高温で
使用可能な高温用サーミスタ及びその製造方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high temperature thermistor which can be used at a high temperature of 300.degree.
【０００２】[0002]
【従来の技術】従来の高温用サーミスタの素体として
は、Ｍｎ−Ｃｏ−Ｎｉ系酸化物とＡｌ2Ｏ3 酸化物との
複合酸化物，ＺｒＯ2 系酸化物，Ｃｒ2 Ｏ3 −Ａｌ2 Ｏ
3 −ＭｎＯ系各酸化物及びスピネル系酸化物等各種のも
のが知られている。2. Description of the Related Art A body of a conventional high-temperature thermistors, composite oxide of Mn-Co-Ni-based oxide and Al 2 O 3 oxide, ZrO 2 based oxide, Cr 2 O 3 -Al 2 O
Various types of 3- MnO-based oxides and spinel-based oxides are known.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、高温用
サーミスタの素体がＭｎ−Ｃｏ−Ｎｉ系酸化物とＡｌ2
Ｏ3 酸化物との複合酸化物のものでは、高温での直流負
荷寿命特性が悪く、またサーミスタ定数（以下、Ｂ定数
という）が小さい等の欠点があった。また、ＺｒＯ2 系
酸化物及びＣｒ2 Ｏ3 −Ａｌ2 Ｏ3 −ＭｎＯ系酸化物の
ものでは、材料特性により焼結性が悪い、焼結体強度が
弱い、高温度での比抵抗が低い等の不具合があり、構造
及び形状等に制限があるという欠点があった。さらに、
スピネル系酸化物のものでは、その結晶構造に起因して
高温での使用雰囲気が限定されるという欠点があった。[SUMMARY OF THE INVENTION However, body of high-temperature thermistor Mn-Co-Ni-based oxide and Al 2
The composite oxide of O 3 oxide has drawbacks such as poor DC load life characteristics at high temperature and a small thermistor constant (hereinafter referred to as B constant). In addition, ZrO 2 -based oxides and Cr 2 O 3 -Al 2 O 3 -MnO-based oxides have poor sinterability due to material properties, weak sintered body strength, and low specific resistance at high temperatures. However, there are drawbacks such as restrictions on the structure and shape. further,
The spinel oxide has a drawback that the use atmosphere at high temperature is limited due to its crystal structure.
【０００４】ところで、サーミスタは使用目的や用途に
応じて種々の抵抗値とＢ定数とが要求されている。従っ
て、サーミスタを製造する上で、同一成分の材料を用い
てその成分比を変えるだけで使用温度での抵抗値及びＢ
定数を広範囲に自由に変えうることは重要である。ま
た、近年、３００℃以上の高温での使用に耐えうるサー
ミスタが強く要望されている。そのような要求として
は、例えば、自動車の排気ガスを完全燃焼させるための
触媒マフラーの温度制御（９００℃）がある。By the way, thermistors are required to have various resistance values and B constants according to the purpose of use and the intended use. Therefore, in manufacturing the thermistor, the resistance value at the use temperature and B
It is important that the constants can be freely changed over a wide range. Further, in recent years, there has been a strong demand for a thermistor that can withstand use at a high temperature of 300 ° C. or higher. Such requirements include, for example, temperature control (900 ° C.) of a catalytic muffler for completely burning exhaust gas of an automobile.
【０００５】そこで、本発明は、上記事情に鑑みてなさ
れたものであり、広い温度範囲に亘って抵抗値変化領域
が得られ、抵抗値及びＢ定数を広範囲に自由に変えるこ
とができ、かつ、高温での直流負荷寿命特性の良好な高
温用サーミスタ及びその製造方法を提供することを目的
とする。Therefore, the present invention has been made in view of the above circumstances, a resistance value changing region can be obtained over a wide temperature range, and the resistance value and the B constant can be freely changed in a wide range, and It is an object of the present invention to provide a high temperature thermistor having excellent DC load life characteristics at high temperature and a method for manufacturing the thermistor.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に請求項１記載の高温用サーミスタは、サーミスタ素体
が、３０乃至９９．９９重量％のＮｉＯと０．０１乃至
７０重量％のＭｇＯとからなるＮｉＯ−ＭｇＯ複合酸化
物であることを特徴とするものである。In order to achieve the above object, the high temperature thermistor according to claim 1 has a thermistor body of 30 to 99.99% by weight of NiO and 0.01 to 70% by weight of MgO. It is a NiO-MgO composite oxide composed of and.
【０００７】また、請求項２記載の高温用サーミスタ
は、一対のリード端子を備えたものである。Further, the high temperature thermistor according to claim 2 is provided with a pair of lead terminals.
【０００８】また、請求項３記載の高温用サーミスタの
製造方法は、３０乃至９９．９９重量％のＮｉＯと０．
０１乃至７０重量％のＭｇＯとからなるＮｉＯ−ＭｇＯ
複合酸化物であるサーミスタ素体と、一対のリード端子
とを有する高温用サーミスタの製造方法であって、成形
後又は仮焼結後のサーミスタ素体に穴を設け、その穴に
前記リード端子を挿入した後、サーミスタ素体を焼成し
てリード端子を固定することを特徴とするものである。A method for manufacturing a high temperature thermistor according to claim 3 is 30 to 99.99% by weight of NiO and 0.
NiO-MgO consisting of 01 to 70 wt% MgO
A method for manufacturing a high temperature thermistor having a thermistor body which is a composite oxide and a pair of lead terminals, wherein a hole is provided in the thermistor body after molding or after provisional sintering, and the lead terminal is provided in the hole. After the insertion, the thermistor element body is fired to fix the lead terminal.
【０００９】[0009]
【作用】請求項１記載の高温用サーミスタによれば、サ
ーミスタ素体の組成材料をＮｉＯ及びＭｇＯとし、各組
成材料を上記範囲内とすることにより、広い温度範囲に
亘って抵抗値変化領域が得られ、抵抗値及びＢ定数を広
範囲に自由に変えることができ、かつ、高温での直流負
荷寿命特性が良好となる。According to the high temperature thermistor of the first aspect, the composition material of the thermistor element body is NiO and MgO, and each composition material is within the above range, whereby the resistance value changing region is wide over a wide temperature range. The obtained resistance value and B constant can be freely changed over a wide range, and the DC load life characteristic at high temperature is improved.
【００１０】また、請求項２記載の高温用サーミスタに
よれば、リード端子を備えているので、高温に適したも
のとなる。Further, according to the high temperature thermistor of the second aspect, since the thermistor is provided with the lead terminals, it becomes suitable for high temperature.
【００１１】また、請求項３記載の高温用サーミスタの
製造方法によれば、請求項１記載と同様の効果が得られ
ると共に、サーミスタ素体の焼成により、穴が収縮して
リード端子を固着するので、リード端子の接続作業を省
略でき、製造容易となり、高温での信頼性が優れたもの
となる。According to the method for manufacturing a high temperature thermistor of claim 3, the same effect as that of claim 1 can be obtained, and the firing of the thermistor element causes the holes to shrink and fix the lead terminals. Therefore, the work of connecting the lead terminals can be omitted, the manufacturing becomes easy, and the reliability at high temperature becomes excellent.
【００１２】[0012]
【実施例】以下、本発明の実施例を詳述する。EXAMPLES Examples of the present invention will be described in detail below.
【００１３】本発明の高温用サーミスタの第１の実施例
は、図示は省略するが、３０乃至９９．９９重量％のＮ
ｉＯと０．０１乃至７０重量％のＭｇＯとからなるＮｉ
Ｏ−ＭｇＯ複合酸化物であるサーミスタ素体と、このサ
ーミスタ素体の表裏両面に被着形成された例えば白金系
の電極と、この電極にろう材又は溶接等により接続され
たリード線とを有するものである。The first embodiment of the high temperature thermistor according to the present invention, although not shown in the drawing, has a N content of 30 to 99.99% by weight.
Ni consisting of iO and 0.01 to 70 wt% MgO
It has a thermistor body which is an O-MgO composite oxide, a platinum-based electrode deposited on both front and back surfaces of this thermistor body, and a lead wire connected to this electrode by a brazing material or welding. It is a thing.
【００１４】次に、第１の実施例の製造方法の一例につ
いて説明する。Next, an example of the manufacturing method of the first embodiment will be described.
【００１５】まず、市販のＮｉＯ，ＭｇＯの各粉末を上
述の割合で所定量配合する。次に、窯業的手段を用いて
混合，仮焼，粉砕，乾燥後、例えばポリビニールアルコ
ールを加えて造粒する。First, commercially available NiO and MgO powders are mixed in a predetermined amount in the above-mentioned proportions. Next, after mixing, calcination, crushing, and drying using a ceramic means, for example, polyvinyl alcohol is added and granulated.
【００１６】そして、これらの造粒粉末を金型に入れ、
５００乃至１０００ｋｇ／ｃｍ2 程度の圧力を加えて成
形を行う。成形体の大きさは、例えば直径３０ｍｍ、厚
み３ｍｍである。その後、成形体を１５００℃で１時間
焼成する。得られた焼結素体の表裏両面に白金系の電極
を焼付け、その電極にろう材又は溶接等によりリード線
を接続して第１の実施例の高温用サーミスタが得られ
る。Then, these granulated powders are put into a mold,
Molding is performed by applying a pressure of about 500 to 1000 kg / cm 2 . The size of the molded body is, for example, 30 mm in diameter and 3 mm in thickness. Then, the molded body is fired at 1500 ° C. for 1 hour. A platinum-based electrode is baked on both front and back surfaces of the obtained sintered body, and a lead wire is connected to the electrode by a brazing material or welding to obtain the high temperature thermistor of the first embodiment.
【００１７】次に、このようにして得られた第１の実施
例の高温用サーミスタの効果を図１及び表１を参照して
説明する。The effect of the high temperature thermistor of the first embodiment thus obtained will be described with reference to FIG. 1 and Table 1.
【００１８】図１は第１の実施例の比抵抗と絶対温度の
逆数との関係を示すグラフである。同図はサーミスタ素
体の組成粉末の割合を変化させた試料を上述した方法に
より作製し、その試料について温度を常温から１０００
℃まで変化させ、抵抗計を用いて抵抗値を測定し、この
測定結果を基に比抵抗と絶対温度の逆数との関係を求め
たもので、同図中の符号は、試料番号を示し、表１に示
す試料番号と対応させている。FIG. 1 is a graph showing the relationship between the specific resistance of the first embodiment and the reciprocal of absolute temperature. In the figure, a sample in which the ratio of the composition powder of the thermistor body was changed was prepared by the method described above, and the temperature of the sample was changed from room temperature to 1000
It was changed to ℃, measured the resistance value using an ohmmeter, the relationship between the specific resistance and the reciprocal of absolute temperature was obtained based on this measurement result, the symbol in the figure indicates the sample number, Corresponds to the sample numbers shown in Table 1.
【００１９】表１は、上記測定結果を基に比抵抗，Ｂ定
数，抵抗変化率を求めたものである。Table 1 shows the specific resistance, the B constant, and the rate of change in resistance calculated based on the above measurement results.
【００２０】[0020]
【表１】 [Table 1]
【００２１】試料は、上述した如く作製して得られた直
径３０ｍｍ、厚み３ｍｍのものを用い、試料番号１乃至
１０の組成粉末の割合は、粉末ＮｉＯは２０乃至９９．
９重量％、粉末ＭｇＯは０．０１乃至８０重量％変化さ
せた。なお、サーミスタ抵抗及びＢ定数は、以下の式か
ら求められる。A sample having a diameter of 30 mm and a thickness of 3 mm obtained by the above-described method is used, and the ratio of the composition powders of sample numbers 1 to 10 is 20 to 99.
9 wt% and powder MgO were changed from 0.01 to 80 wt%. The thermistor resistance and B constant are obtained from the following equations.
【００２２】 Ｂ＝ｌｎ（Ｒ1 ／Ｒ0 ）／（１／Ｔ1 −１／Ｔ0 ） （但し、Ｒ1 ，Ｒ0 は抵抗、Ｔ1 ，Ｔ0 は絶対温度、Ｂ
はＢ定数）B = ln (R 1 / R 0 ) / (1 / T 1 −1 / T 0 ) (where R 1 and R 0 are resistances, T 1 and T 0 are absolute temperatures, and B
Is the B constant)
【００２３】表１から明らかなように、第１の実施例に
よれば、ＭｇＯの組成の割合を０．０１乃至７０重量％
まで変えることにより、サーミスタ素子の比抵抗ρは、
６００℃で５８乃至１．０×１０6 Ω・ｃｍ、９００℃
で１３乃至４．０×１０3 Ω・ｃｍと大幅に変化し、Ｂ
定数も、５１００乃至１８８５０Ｋと大幅に変化するこ
とが分った。As is apparent from Table 1, according to the first embodiment, the composition ratio of MgO is 0.01 to 70% by weight.
The specific resistance ρ of the thermistor element is
58 to 1.0 × 10 6 Ω · cm at 600 ℃, 900 ℃
Changes significantly from 13 to 4.0 × 10 3 Ω · cm, and B
It was found that the constant also changed significantly from 5100 to 18850K.
【００２４】また、比抵抗ρは、６００℃では１０6 Ω
・ｃｍ以下、９００℃では１０4 Ω・ｃｍ以下となり、
回路形成上好ましい値にできた。なお、ＭｇＯを７０重
量％越えると、比抵抗が大きくなりすぎ、また抵抗変化
率も大きくなって実用的でなくなる。The specific resistance ρ is 10 6 Ω at 600 ° C.
-Cm or less, at 900 ° C becomes 10 4 Ω-cm or less,
It was possible to obtain a preferable value in circuit formation. When the content of MgO exceeds 70% by weight, the specific resistance becomes too large and the rate of change in resistance becomes large, which is not practical.
【００２５】さらに、図１から明らかなように、抵抗値
変化領域は、広い温度範囲に亘って認められ、その使用
温度範囲をより一層拡大することができた。また、Ｍｇ
Ｏとの複合材料により、任意にＢ定数，比抵抗を変化さ
せることができた。Further, as is apparent from FIG. 1, the resistance value changing region was recognized over a wide temperature range, and the operating temperature range could be further expanded. Also, Mg
The B constant and the specific resistance could be arbitrarily changed by the composite material with O.
【００２６】またさらに、ＮｉＯ−ＭｇＯ酸化物系は、
緻密な結晶体が得られ、しかも焼結性が良いために焼結
体強度が強く、高温での比抵抗が実用回路形成の上から
十分に有用な値となるので、構造及び形状に自由度が多
く、例えば従来品の形状に比べ小さく、熱応答性に優
れ、かつ雰囲気に強い素子が可能となる。Furthermore, the NiO-MgO oxide system is
Since a dense crystal body can be obtained and the sinterability is good, the strength of the sintered body is strong, and the specific resistance at high temperature is a value that is sufficiently useful for practical circuit formation. However, it is possible to provide an element that is smaller than the shape of a conventional product, has excellent thermal response, and is strong in the atmosphere.
【００２７】図２は本発明の高温用サーミスタの第２の
実施例を示す断面図である。FIG. 2 is a sectional view showing a second embodiment of the high temperature thermistor of the present invention.
【００２８】同図に示す第２の実施例のサーミスタは、
第１の実施例と同様の３０乃至９９．９９重量％のＮｉ
Ｏと０．０１乃至７０重量％のＭｇＯとからなるＮｉＯ
−ＭｇＯ複合酸化物である柱状のサーミスタ素体１を有
し、そのサーミスタ素体１の各端部に穴１ａを形成し、
その穴１ａに例えば白金，白金ロジウム線等からなるリ
ード端子２を挿入固着したものである。The thermistor of the second embodiment shown in FIG.
30 to 99.99% by weight of Ni as in the first embodiment
NiO consisting of O and 0.01 to 70 wt% MgO
A columnar thermistor body 1 which is a MgO composite oxide, and holes 1a are formed at each end of the thermistor body 1.
A lead terminal 2 made of, for example, platinum or platinum rhodium wire is inserted and fixed in the hole 1a.
【００２９】次に、第２の実施例の製造方法の一例につ
いて説明する。Next, an example of the manufacturing method of the second embodiment will be described.
【００３０】まず、第１の実施例と同様に、市販のＮｉ
Ｏ，ＭｇＯの各粉末を上述の割合で所定量配合し、窯業
的手段を用いて混合，仮焼，粉砕，乾燥後、例えばポリ
ビニールアルコールを加えて造粒する。First, as in the first embodiment, commercially available Ni is used.
Each powder of O and MgO is blended in a predetermined amount in the above-mentioned proportion, and after mixing, calcination, pulverization and drying by using a ceramic means, for example, polyvinyl alcohol is added to granulate.
【００３１】そして、第１の実施例と同様に、これらの
造粒粉末を金型に入れ、５００乃至１０００ｋｇ／ｃｍ
2 程度の圧力を加えて成形を行う。この実施例では、成
形体１の大きさは直径３ｍｍ，長さ６ｍｍである。な
お、ここで仮焼結させてもよい。Then, in the same manner as in the first embodiment, these granulated powders were put into a mold, and 500 to 1000 kg / cm.
Molding is performed by applying a pressure of about 2 . In this example, the molded body 1 has a diameter of 3 mm and a length of 6 mm. In addition, preliminary sintering may be performed here.
【００３２】次に、成形体１の両端部に直径０．５ｍｍ
のドリルで深さ２ｍｍの丸穴１ａを掘る。この穴１ａに
直径０．５ｍｍの例えば白金等からなるリード端子２を
挿入する。その後、成形体試料を１５００℃で１時間焼
成すると、成形体１は収縮して穴１ａも収縮するため、
リード端子２は固着され、第２の実施例の高温用サーミ
スタが得られる。Next, a diameter of 0.5 mm is applied to both ends of the molded body 1.
The round hole 1a having a depth of 2 mm is digged with the drill. A lead terminal 2 having a diameter of 0.5 mm and made of, for example, platinum is inserted into the hole 1a. After that, when the molded body sample is fired at 1500 ° C. for 1 hour, the molded body 1 contracts and the holes 1a also contract,
The lead terminal 2 is fixed, and the high temperature thermistor of the second embodiment is obtained.
【００３３】次に、このようにして得られた第２の実施
例の高温用サーミスタの効果を表１を参照して説明す
る。Next, the effect of the high temperature thermistor of the second embodiment thus obtained will be described with reference to Table 1.
【００３４】第１の実施例の場合と同様に作製した各試
料について、１０００℃の温度に保持し、直流印加電圧
６Ｖを連続印加して抵抗の時間変化を測定した。その測
定結果を基に１０００時間後の抵抗変化率ΔＲを求め、
その結果を表１に示す。また、抵抗変化率ΔＲは、次式
によって算出した。Each sample produced in the same manner as in the case of the first embodiment was maintained at a temperature of 1000 ° C., a direct current applied voltage of 6 V was continuously applied, and the time change of resistance was measured. Based on the measurement result, the resistance change rate ΔR after 1000 hours was calculated,
The results are shown in Table 1. Further, the resistance change rate ΔR was calculated by the following equation.
【００３５】 ΔＲ＝｛（Ｒｔ−Ｒ0 ）／Ｒ0 ｝×１００％ （但し、Ｒｔはｔ時間後の抵抗値、Ｒ0 は出発時の抵抗
値）ΔR = {(R t −R 0 ) / R 0 } × 100% (where Rt is the resistance value after t hours and R 0 is the resistance value at the time of departure)
【００３６】第２の実施例によれば、例えば、温度１０
００℃，直流電圧６Ｖ印加の条件下で、抵抗変化率は１
００時間後で２％以下、１０００時間後で５％以下（表
１参照）となり、直流負荷寿命特性において優れている
ことが分かった。According to the second embodiment, for example, a temperature of 10
The resistance change rate is 1 under the conditions of 00 ° C and DC voltage of 6V.
It was 2% or less after 00 hours and 5% or less after 1000 hours (see Table 1), and it was found that the DC load life characteristics were excellent.
【００３７】また、サーミスタ素体１を焼成するだけ
で、リード端子２を穴１ａに固着しているので、リード
端子２の接続作業を省略でき、製造容易となり、高温で
の信頼性が優れたものとなる。なお、上記直流負荷寿命
特性は、第１の実施例においても同様に有するものであ
る。Further, since the lead terminal 2 is fixed to the hole 1a only by firing the thermistor element body 1, the work of connecting the lead terminal 2 can be omitted, the manufacturing becomes easy, and the reliability at high temperature is excellent. Will be things. The above DC load life characteristics are similarly possessed in the first embodiment.
【００３８】なお、本発明は上記実施例に限定されず、
その要旨を変更しない範囲内で種々に変形実施できる。
例えば、第２の実施例は図３に示すように一対のリード
端子２，２を同方向に導出してもよい。The present invention is not limited to the above embodiment,
Various modifications can be made without changing the gist of the invention.
For example, in the second embodiment, a pair of lead terminals 2 and 2 may be led out in the same direction as shown in FIG.
【００３９】[0039]
【発明の効果】以上詳述した請求項１記載の発明によれ
ば、サーミスタ素体を上記構成とすることにより、広い
温度範囲に亘って抵抗値変化領域が得られ、抵抗値及び
Ｂ定数を広範囲に自由に変えることができ、かつ、高温
での直流負荷寿命特性の良好な高温用サーミスタを提供
することができる。According to the invention described in claim 1 described in detail above, by forming the thermistor element body as described above, a resistance value changing region can be obtained over a wide temperature range, and a resistance value and a B constant can be obtained. It is possible to provide a high temperature thermistor which can be freely changed over a wide range and has excellent DC load life characteristics at high temperatures.
【００４０】請求項２記載の発明によれば、リード端子
を備えているので、高温に適したものとなる。According to the second aspect of the invention, since the lead terminal is provided, it is suitable for high temperatures.
【００４１】請求項３記載の発明によれば、請求項１記
載と同様の効果が得られると共に、サーミスタ素体の焼
成により、穴が収縮してリード端子を固着するので、リ
ード端子の接続作業を省略でき、製造容易となり、高温
での信頼性が優れたものとなる。According to the invention of claim 3, the same effect as that of claim 1 is obtained, and since the hole is contracted and the lead terminal is fixed by firing the thermistor element body, the lead terminal connecting work is performed. Can be omitted, the manufacturing becomes easy, and the reliability at high temperature becomes excellent.
【図１】本発明の高温用サーミスタの第１の実施例の比
抵抗と絶対温度の逆数との関係を示すグラフである。FIG. 1 is a graph showing the relationship between the specific resistance and the reciprocal of absolute temperature of the first embodiment of the high temperature thermistor of the present invention.
【図２】本発明の高温用サーミスタの第２の実施例を示
す断面図である。FIG. 2 is a sectional view showing a second embodiment of the high temperature thermistor of the present invention.
【図３】第２の実施例の他の例を示す断面図である。FIG. 3 is a sectional view showing another example of the second embodiment.
１ サーミスタ素体 １ａ 穴 ２ リード端子 1 Thermistor body 1a hole 2 Lead terminal
Claims (3)
重量％のＮｉＯと０．０１乃至７０重量％のＭｇＯとか
らなるＮｉＯ−ＭｇＯ複合酸化物であることを特徴とす
る高温用サーミスタ。1. The thermistor body is 30 to 99.99.
A high temperature thermistor, which is a NiO-MgO composite oxide consisting of wt% NiO and 0.01 to 70 wt% MgO.
する請求項１記載の高温用サーミスタ。2. The high temperature thermistor according to claim 1, further comprising a pair of lead terminals.
０．０１乃至７０重量％のＭｇＯとからなるＮｉＯ−Ｍ
ｇＯ複合酸化物であるサーミスタ素体と、一対のリード
端子とを有する高温用サーミスタの製造方法であって、
成形後又は仮焼結後のサーミスタ素体に穴を設け、その
穴に前記リード端子を挿入した後、サーミスタ素体を焼
成してリード端子を固定することを特徴とする高温用サ
ーミスタの製造方法。3. NiO-M consisting of 30 to 99.99% by weight NiO and 0.01 to 70% by weight MgO.
A method of manufacturing a high temperature thermistor having a thermistor element body, which is a gO complex oxide, and a pair of lead terminals,
A method for manufacturing a high temperature thermistor, characterized in that a hole is formed in the thermistor body after molding or after provisional sintering, the lead terminal is inserted into the hole, and then the thermistor body is baked to fix the lead terminal. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31359092A JPH06163206A (en) | 1992-11-24 | 1992-11-24 | Thermistor for high temperature and manufacturings method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31359092A JPH06163206A (en) | 1992-11-24 | 1992-11-24 | Thermistor for high temperature and manufacturings method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06163206A true JPH06163206A (en) | 1994-06-10 |
Family
ID=18043150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31359092A Withdrawn JPH06163206A (en) | 1992-11-24 | 1992-11-24 | Thermistor for high temperature and manufacturings method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06163206A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143207A (en) * | 1996-09-18 | 2000-11-07 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Wide-range thermistor material and method for producing it |
| JP2010109317A (en) * | 2008-10-03 | 2010-05-13 | Mitsubishi Materials Corp | Thermistor element manufacturing method, and thermistor element |
-
1992
- 1992-11-24 JP JP31359092A patent/JPH06163206A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143207A (en) * | 1996-09-18 | 2000-11-07 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Wide-range thermistor material and method for producing it |
| JP2010109317A (en) * | 2008-10-03 | 2010-05-13 | Mitsubishi Materials Corp | Thermistor element manufacturing method, and thermistor element |
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| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
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