JPH06140884A - Cmos-type semiconductor cr oscillation circuit - Google Patents

Cmos-type semiconductor cr oscillation circuit

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Publication number
JPH06140884A
JPH06140884A JP28722292A JP28722292A JPH06140884A JP H06140884 A JPH06140884 A JP H06140884A JP 28722292 A JP28722292 A JP 28722292A JP 28722292 A JP28722292 A JP 28722292A JP H06140884 A JPH06140884 A JP H06140884A
Authority
JP
Japan
Prior art keywords
differential
circuit
voltage
turned
output signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28722292A
Other languages
Japanese (ja)
Inventor
Hiroshi Ishii
宏 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP28722292A priority Critical patent/JPH06140884A/en
Publication of JPH06140884A publication Critical patent/JPH06140884A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce current consumption permitted to flow in an oscillation circuit by changing-over a differential circuit and two high/low reference voltages which are inputted to the differential circuit by means of a differential output signal outputted from an inverter string connected to the differential circuit. CONSTITUTION:Unless an electric load is charged to a time-limit capacitor C as the initial state of oscillation, the differential output signal SZ becomes an L level and the reverse differential output signal SZR outputted form an inverter 11 becomes an H level so that the transfer gate TG 1 of a reference voltage change-over part 2 is turned on and the TG 2 is turned off. Therefore the reference high voltage V1 is inputted to the input end - of the differential circuit Z1, the charge/discharge SW transistor(Tr) P is turned on and the electric load is charged in the time-limit capacitor C. When the oscillation voltage SN1 becomes more than the voltage V1, the inverters 11 and 12 are inverted. Therefore, the gate TG 1 is turned off, TG 2 is turned on Zd Tr P is turned off. Thus, the electric load of the capacitor C starts discharging through a time-limit resistor R.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はCMOS型半導体CR発
振回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CMOS semiconductor CR oscillator circuit.

【0002】[0002]

【従来の技術】従来のCMOS型半導体CR発振回路
は、図4に示すようにリファレンス分圧抵抗R1〜R3
の3個を高電圧端子THと低電圧端子TL間に直列接続
し、分圧によって節点N1,N2にそれぞれ発生するリ
ファレンス高電圧V1を第一の差動回路Z1の非反転入
力端+に、またリファレンス低電圧V2を第二の差動回
路Z2の非反転入力端+にそれぞれ入力している。
2. Description of the Related Art A conventional CMOS semiconductor CR oscillator circuit has reference voltage dividing resistors R1 to R3 as shown in FIG.
Are connected in series between the high voltage terminal TH and the low voltage terminal TL, and the reference high voltage V1 generated at the nodes N1 and N2 by voltage division is applied to the non-inverting input terminal + of the first differential circuit Z1. Further, the reference low voltage V2 is input to the non-inverting input terminal + of the second differential circuit Z2.

【0003】充放電部1は、限時コンデンサCと限時抵
抗Rとが並列接続された時定数素子1tcの一端が低電
圧端子TLに、また他端が節点Nと放充電SW用P型ト
ランジスタPを介して高電圧端子THに接続されてい
る。
In the charging / discharging section 1, one end of a time constant element 1tc in which a time delay capacitor C and a time delay resistor R are connected in parallel is a low voltage terminal TL, and the other end is a node N and a discharge charge P-type transistor P. Is connected to the high voltage terminal TH via.

【0004】充放電部1の節点Nを両差動回路Z1,Z
2のそれぞれの反転入力端−に接続し、第一の差動回路
Z1の出力信号を第一のインバータI1を構成するP型
トランジスタのゲートに、また第二の差動回路Z2の出
力信号をインバータI1を構成するN型トランジスタの
ゲートにそれぞれ入力している。
The node N of the charging / discharging unit 1 is connected to both differential circuits Z1, Z.
2 and the output signal of the first differential circuit Z1 is connected to the gate of the P-type transistor forming the first inverter I1, and the output signal of the second differential circuit Z2 is connected to the inverting input terminal −2 of the second differential circuit Z1. The signals are input to the gates of N-type transistors that form the inverter I1.

【0005】インバータI1の出力端は、二つのCMO
Sインバータで構成するラッチ回路3と第二のインバー
タI2を介して発振出力端子Toに接続されると共に充
放電部1のP型トランジスタPのゲートに接続されてい
る。
The output terminal of the inverter I1 has two CMOs.
It is connected to the oscillation output terminal To via the latch circuit 3 composed of the S inverter and the second inverter I2, and is also connected to the gate of the P-type transistor P of the charging / discharging unit 1.

【0006】次に図5の各信号の波形図を用いて回路の
動作について説明する。まず、発振の初期状態として限
時コンデンサCに電荷がチャージされていない時点で、
両差動回路Z1,Z2はともに”H”レベルを出力する
ため発振出力信号Soは”L”レベルであり、充放電部
1のP型トランジスタPはオンして、高電圧端子THか
ら限時コンデンサCに電荷がチャージされ始める。
Next, the operation of the circuit will be described with reference to the waveform diagram of each signal in FIG. First, as the initial state of oscillation, when the time-delay capacitor C is not charged,
Since both the differential circuits Z1 and Z2 output "H" level, the oscillation output signal So is "L" level, the P-type transistor P of the charging / discharging unit 1 is turned on, and the time-delay capacitor from the high voltage terminal TH. The C starts to be charged.

【0007】次に、両差動回路Z1,Z2の反転入力端
−に入力する発振電圧SN2がリファレンス低電圧V2
以上になると、第二の差動回路Z2の出力信号が”L”
レベルとなり、インバータI1の二つのトランジスタは
共にオフとなるが、ラッチ回路3によって節点Nの電圧
である発振出力信号Soは前のレベルを保持する。
Next, the oscillation voltage SN2 input to the inverting input terminals-of both differential circuits Z1 and Z2 is the reference low voltage V2.
With the above, the output signal of the second differential circuit Z2 is "L".
The level becomes high and the two transistors of the inverter I1 are both turned off, but the oscillation output signal So, which is the voltage at the node N, holds the previous level by the latch circuit 3.

【0008】次に、発振電圧SN2がリファレンス高電
圧V1以上に上がると両差動回路Z1,Z2は共に”
L”レベルを出力するため発振出力信号Soは”H”レ
ベルとなり、P型トランジスタPはオフし、よって限時
コンデンサCにチャージされた電荷は限時抵抗Rを通し
て放電される。
Next, when the oscillation voltage SN2 rises above the reference high voltage V1, both differential circuits Z1 and Z2 are both "
Since the L "level is output, the oscillation output signal So becomes the" H "level, the P-type transistor P is turned off, and the electric charge charged in the time delay capacitor C is discharged through the time delay resistor R.

【0009】次に、発振電圧SN2がリファレンス高電
圧V1以下に下がると差動回路Z1の出力信号が”H”
レベルとなり、インバータI1の二つのトランジスタは
共にオフとなるが、ラッチ回路3は前の状態を保持す
る。
Next, when the oscillation voltage SN2 falls below the reference high voltage V1, the output signal of the differential circuit Z1 is "H".
The level becomes high, and the two transistors of the inverter I1 are both turned off, but the latch circuit 3 holds the previous state.

【0010】最後に、発振電圧SN2がリファレンス高
電圧V1以下に下がると、両差動回路Z1,Z2の出力
信号は共に”H”レベルを出力するので、P型トランジ
スタPはオンとなる。以降は上述の状態を自動的に繰り
返すので発振出力端子Toに連続した発振出力信号So
が発生する。
Finally, when the oscillation voltage SN2 falls below the reference high voltage V1, the output signals of both differential circuits Z1 and Z2 both output "H" level, so that the P-type transistor P is turned on. After that, since the above-mentioned state is automatically repeated, the continuous oscillation output signal So is output to the oscillation output terminal To.
Occurs.

【0011】[0011]

【発明が解決しようとする課題】従来のCMOS型半導
体CR発振回路では、差動回路を二つ有するので回路の
消費電流が大きく、また半導体製造工程における二つの
差動回路のオフセット電位の違いによるばらつきによっ
て発振周波数がばらつくという欠点があった。
The conventional CMOS semiconductor CR oscillator circuit has two differential circuits, so that the current consumption of the circuit is large, and the difference in the offset potential between the two differential circuits in the semiconductor manufacturing process is caused. There is a drawback that the oscillation frequency varies due to the variation.

【0012】[0012]

【課題を解決するための手段】本発明のCMOS型半導
体CR発振回路は、限時コンデンサおよび限時抵抗が並
列に接続された時定数素子の一端に節点Nを介して充放
電スイッチ用トランジスタを直列接続した充放電部の両
端を前記時定数素子の他端を低電圧側にして高電圧端子
および低電圧端子間に接続し、前記節点Nを差動回路の
一方の入力端に接続し、リファレンス高電圧またはリフ
ァレンス低電圧を前記差動回路の他方の入力端に入力
し、前記差動回路の差動出力信号がインバータ列を介し
て前記充放電スイッチ用トランジスタのゲートに帰還供
給されると共に発振出力端子に出力されるCMOS型半
導体CR発振回路において、N型トランジスタおよびP
型ランジスタで形成されたアナログスイッチング素子ま
たはインバータを有するリファレンス電圧切換部を設
け、該リファレンス電圧切換部に前記リファレンス高電
圧と前記リファレンス低電圧を入力し、前記差動出力信
号に制御され前記二つの電圧のいずれかに切り換えて前
記差動回路の他方の入力端に入力して構成されている。
In the CMOS type semiconductor CR oscillator circuit of the present invention, a charge / discharge switch transistor is connected in series via a node N to one end of a time constant element in which a time delay capacitor and a time delay resistor are connected in parallel. Both ends of the charging / discharging part are connected between a high voltage terminal and a low voltage terminal with the other end of the time constant element being on the low voltage side, and the node N is connected to one input terminal of a differential circuit to obtain a reference voltage. Voltage or low reference voltage is input to the other input terminal of the differential circuit, and the differential output signal of the differential circuit is fed back to the gate of the charge / discharge switch transistor through an inverter string and also oscillates. In a CMOS type semiconductor CR oscillation circuit output to a terminal, an N type transistor and a P type
A reference voltage switching unit having an analog switching element or an inverter formed by a transistor is provided, and the reference high voltage and the reference low voltage are input to the reference voltage switching unit, and the two are controlled by the differential output signal. The voltage is switched to any one of the voltages and input to the other input terminal of the differential circuit.

【0013】[0013]

【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の第一の実施例の回路図である。本実
施例のCMOS型半導体CR発振回路は、高電圧端子T
Hと低電圧端子TL間に挿入されている充放電部1およ
びリファレンス分圧抵抗R1〜R3と、発振出力端子T
oに接続されたCMOSインバータI2は図4に示した
従来の回路のものと同一で、リファレンス分圧抵抗R1
〜R3の接続節点N1,N2と差動回路Z1の反転入力
端−との間にリファレンス電圧切換部2を挿入したもの
である。
The present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of the present invention. The CMOS semiconductor CR oscillator circuit of this embodiment has a high voltage terminal T
Charge / discharge unit 1 and reference voltage dividing resistors R1 to R3 inserted between H and the low voltage terminal TL, and oscillation output terminal T
The CMOS inverter I2 connected to o is the same as that of the conventional circuit shown in FIG.
The reference voltage switching unit 2 is inserted between the connection nodes N1 and N2 of R3 to R3 and the inverting input terminal − of the differential circuit Z1.

【0014】すなわち、限時コンデンサCと限時抵抗R
とを並列に接続した時定数素子1tcの高電圧側の節点
Nに充放電SW用P型トランジスタPのドレインを接続
した充放電部1の両端を、トランジスタPのソースを高
電圧端子THに、また時定数素子1tcの他端を低電圧
端子TLに接続している。
That is, the time delay capacitor C and the time delay resistor R
Both ends of the charging / discharging portion 1 in which the drain of the charging / discharging SW P-type transistor P is connected to the node N on the high voltage side of the time constant element 1tc in which the and are connected in parallel, the source of the transistor P is connected to the high voltage terminal TH, The other end of the time constant element 1tc is connected to the low voltage terminal TL.

【0015】節点Nの発振電圧SN1を差動回路Z1の
非反転入力端+に入力し、その出力する差動出力信号S
Zを第一のインバータI1と節点N3と第二のインバー
タI2とを介して発振出力端子Toに供給すると共にト
ランジスタPのゲートに帰還接続している。
The oscillating voltage SN1 at the node N is input to the non-inverting input terminal + of the differential circuit Z1 and the differential output signal S output by the input.
Z is supplied to the oscillation output terminal To through the first inverter I1, the node N3, and the second inverter I2, and is also feedback-connected to the gate of the transistor P.

【0016】高電圧端子THと低電圧端子TL間に接続
されたリファレンス用分圧抵抗R1〜R3の接続節点N
1,N2に発生するリファレンス高電圧V1とリファレ
ンス低電圧V2とは、リファレンス電圧切換部2を介し
て差動出力信号SZによって選択されて差動回路Z1の
反転入力端−に供給される。
A connection node N of the reference voltage dividing resistors R1 to R3 connected between the high voltage terminal TH and the low voltage terminal TL.
The reference high voltage V1 and the reference low voltage V2 generated at 1 and N2 are selected by the differential output signal SZ via the reference voltage switching unit 2 and supplied to the inverting input terminal − of the differential circuit Z1.

【0017】リファレンス電圧切換部2はCMOSトラ
ンジスタによる二つのトランスファーゲートTG1,T
G2で構成され、それらのゲートはそれぞれ差動出力信
号SZおよび反転差動出力信号SZRの対で制御され
る。
The reference voltage switching section 2 is composed of two transfer gates TG1 and T1 formed of CMOS transistors.
G2, whose gates are controlled by a pair of differential output signal SZ and inverted differential output signal SZR, respectively.

【0018】次に図2の各信号の波形図を用いて図1の
回路の動作について説明する。まず、発振の初期状態と
して限時コンデンサCに電荷がチャージされていない場
合に、差動出力信号SZは”L”レベルとなりインバー
タI1から出力される反転差動出力信号SZRは”H”
レベルとなるので、リファレンス電圧切換部2のトラン
スファーゲートTG1はオンし、トランスファーゲート
TG2はオフする。
Next, the operation of the circuit shown in FIG. 1 will be described with reference to the waveform diagrams of the signals shown in FIG. First, in the initial state of oscillation, when the time delay capacitor C is not charged, the differential output signal SZ becomes "L" level and the inverted differential output signal SZR output from the inverter I1 is "H".
Since it becomes the level, the transfer gate TG1 of the reference voltage switching unit 2 is turned on and the transfer gate TG2 is turned off.

【0019】従って差動回路Z1の反転入力端−にはリ
ファレンス高電圧V1が入力され、充放電SW用P型ト
ランジスタPはオンし、限時コンデンサCに高電圧端子
THから電荷がチャージされ始める。
Therefore, the reference high voltage V1 is input to the inverting input terminal-of the differential circuit Z1, the charging / discharging SW P-type transistor P is turned on, and the time delay capacitor C starts to be charged from the high voltage terminal TH.

【0020】次に、差動回路Z1の非反転入力端+に入
力する節点Nの電圧である発振電圧SN1がリファレン
ス高電圧V1以上に上がると差動回路Z1は”H”レベ
ルを出力し、インバータI1,I2もそれぞれ反転す
る。
Next, when the oscillation voltage SN1 which is the voltage at the node N input to the non-inverting input terminal + of the differential circuit Z1 rises above the reference high voltage V1, the differential circuit Z1 outputs "H" level, The inverters I1 and I2 are also inverted.

【0021】従って第一のトランスファーゲートTG1
はオフ、第二のトランスファーゲートTG2はオンし、
差動回路Z1の反転入力端−にはリファレンス低電圧が
切り換わって入力される。
Therefore, the first transfer gate TG1
Is off, the second transfer gate TG2 is on,
The reference low voltage is switched and input to the inverting input terminal − of the differential circuit Z1.

【0022】またインバータI2は”H”レベルの発振
出力信号Soを出力するのでトランジスタPはオフす
る。よって限時コンデンサCにチャージされた電荷は限
時抵抗Rを通して放電を開始する。
Further, since the inverter I2 outputs the oscillation output signal So of "H" level, the transistor P is turned off. Therefore, the electric charge charged in the time delay capacitor C starts discharging through the time delay resistor R.

【0023】さらに、差動回路Z1の非反転入力端+の
入力電圧SN1がリファレンス低電圧V2以下に下がる
と差動出力信号SZは”L”レベルとなり、インバータ
I1,I2もそれぞれ反転する。
Further, when the input voltage SN1 at the non-inverting input terminal + of the differential circuit Z1 falls below the reference low voltage V2, the differential output signal SZ becomes "L" level and the inverters I1 and I2 are also inverted.

【0024】よって第一のトランスファーゲートTG1
はオン、第二のトランスファーゲートTG2はオフし、
反転入力端−にはリファレンス高電圧V1が切り換わっ
て入力される。
Therefore, the first transfer gate TG1
Is on, the second transfer gate TG2 is off,
The reference high voltage V1 is switched and input to the inverting input terminal-.

【0025】また発振出力信号Soは”L”レベルとな
るので、トランジスタPはオンする。従って限時コンデ
ンサCは再び充電を開始する。以降上述の状態を自動的
に繰り返すことによって発振は継続する。
Since the oscillation output signal So becomes "L" level, the transistor P is turned on. Therefore, the time delay capacitor C starts charging again. After that, oscillation is continued by automatically repeating the above-mentioned state.

【0026】また、図1のインバータ列の数を増しても
よく、充放電SW用P型トランジスタPの代わりにN型
トランジスタを電源の極性に対応して使用しても同様の
効果がある。
Further, the number of inverter rows in FIG. 1 may be increased, and an N-type transistor may be used instead of the P-type transistor P for charging / discharging SW depending on the polarity of the power source, and the same effect can be obtained.

【0027】本実施例の回路では、従来の二つの差動回
路が一つになり、回路に流れる消費電流iC1が減少す
る。また二つの差動回路のオフセット電位の差による発
振周波数の変動がなくなる。さらに、従来の差動回路Z
2とラッチ回路3が無くなるのでトランジスタ数が7ヶ
減少し、チップの小型化が出来る。
In the circuit of this embodiment, two conventional differential circuits are combined into one, and the consumption current iC1 flowing through the circuit is reduced. Further, the oscillation frequency does not fluctuate due to the difference in offset potential between the two differential circuits. Furthermore, the conventional differential circuit Z
Since 2 and the latch circuit 3 are eliminated, the number of transistors is reduced by 7 and the chip can be miniaturized.

【0028】図3は本発明の第二の実施例の回路図であ
る。本実施例は図1の第一の実施例のリファレンス電圧
切換部2を、P型トランジスタとN型トランジスタのそ
れぞれのドレインを接続したインバータ型のリファレン
ス電圧切換部2aに置き換えたものであり、それ以外の
構成は図1の回路と同様である。
FIG. 3 is a circuit diagram of the second embodiment of the present invention. In this embodiment, the reference voltage switching unit 2 of the first embodiment of FIG. 1 is replaced with an inverter type reference voltage switching unit 2a in which drains of P-type transistors and N-type transistors are connected. The configuration other than that is the same as the circuit of FIG.

【0029】本実施例においても、差動出力信号SZ
が”L”レベルの場合にCMOSインバータのP型トラ
ンジスタがオンしかつN型トランジスタはオフするの
で、反転入力端−にはリファレンス高電圧V1が入力す
る。
Also in this embodiment, the differential output signal SZ
Is at the "L" level, the P-type transistor of the CMOS inverter is turned on and the N-type transistor is turned off, so that the reference high voltage V1 is input to the inverting input terminal-.

【0030】差動出力信号SZが”H”レベルの場合は
インバータのP型トランジスタがオフしN型トランジス
タはオンとなり、反転入力端−にはリファレンス低電圧
が入力にする。従って、第一の実施例と同様に限時コン
デンサCの充放電により発振がおこなわれるが、本実施
例では回路のトランジスタ数が9ヶ減少しチップがさら
に小型化出来る利点がある。
When the differential output signal SZ is at "H" level, the P-type transistor of the inverter is turned off and the N-type transistor is turned on, and the reference low voltage is input to the inverting input terminal-. Therefore, as in the first embodiment, oscillation is performed by charging and discharging the time delay capacitor C, but this embodiment has the advantage that the number of transistors in the circuit is reduced by 9 and the chip can be further downsized.

【0031】[0031]

【発明の効果】以上説明したように本発明は、差動回路
とそれに接続されるインバータ列の出力する差動出力信
号によって差動回路に入力される高・低二つのリファレ
ンス電圧を切り換えるので、従来有った二つの差動回路
が一つになり、発振回路に流れる消費電流が減少する。
As described above, according to the present invention, the high and low reference voltages input to the differential circuit are switched by the differential output signal output from the differential circuit and the inverter train connected thereto. The conventional two differential circuits are combined into one, and the current consumption flowing through the oscillator circuit is reduced.

【0032】また、二つの差動回路のオフセット電位の
差による発振周波数の変動がなくなる。さらに差動回路
が一つとラッチ回路がなくなるため、トランジスタ数が
少なくなりチップのレイアウト面積を小さく小型化する
ことができる。
Further, the fluctuation of the oscillation frequency due to the difference between the offset potentials of the two differential circuits is eliminated. Further, since one differential circuit and the latch circuit are eliminated, the number of transistors is reduced and the chip layout area can be reduced and downsized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第一の実施例の回路図である。FIG. 1 is a circuit diagram of a first embodiment of the present invention.

【図2】図1の回路の動作を説明するための電流と電圧
の波形図である。
FIG. 2 is a waveform diagram of current and voltage for explaining the operation of the circuit of FIG.

【図3】本発明の第二の実施例の回路図である。FIG. 3 is a circuit diagram of a second embodiment of the present invention.

【図4】従来のCMOS型半導体CR発振回路の一例の
回路図である。
FIG. 4 is a circuit diagram of an example of a conventional CMOS semiconductor CR oscillator circuit.

【図5】図4の回路の動作を説明するための電流と電圧
の波形図である。
5 is a waveform diagram of current and voltage for explaining the operation of the circuit of FIG.

【符号の説明】[Explanation of symbols]

1 充放電部 1tc 時定数素子 2,2a リファレンス電圧切換部 C 時限コンデンサ I1,I2 CMOSインバータ iC1 回路消費電流 N,N1〜N3 節点 P 充放電SW用P型トランジスタ R 時限抵抗 R1〜R3 リファレンス用分圧抵抗 SN1 発振電圧 So 発振出力電圧 SZ 差動出力信号 SZR 差動出力反転信号 To 発振出力端子 TH 高電圧端子 TL 低電圧端子 TG1,TG2 トランスファーゲート V1 リファレンス高電圧 V2 リファレンス低電圧 VH 高電圧 VL 低電圧 Z1 差動回路 − 反転入力端 + 非反転入力端 1 Charge / Discharge Unit 1tc Time Constant Element 2, 2a Reference Voltage Switching Unit C Time Capacitor I1, I2 CMOS Inverter iC1 Circuit Current Consumption N, N1 to N3 Nodes P P Transistor for Charge / Discharge SW R Time Resistor R1 to R3 Reference Components Piezoresistor SN1 Oscillation voltage So Oscillation output voltage SZ Differential output signal SZR Differential output inversion signal To Oscillation output terminal TH High voltage terminal TL Low voltage terminal TG1, TG2 Transfer gate V1 Reference high voltage V2 Reference low voltage VH High voltage VL Low Voltage Z1 Differential circuit − Inverting input terminal + Non-inverting input terminal

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 限時コンデンサおよび限時抵抗が並列に
接続された時定数素子の一端に節点Nを介して充放電ス
イッチ用トランジスタを直列接続した充放電部の両端を
前記時定数素子の他端を低電圧側にして高電圧端子およ
び低電圧端子間に接続し、前記節点Nを差動回路の一方
の入力端に接続し、リファレンス高電圧またはリファレ
ンス低電圧を前記差動回路の他方の入力端に入力し、前
記差動回路の差動出力信号がインバータ列を介して前記
充放電スイッチ用トランジスタのゲートに帰還供給され
ると共に発振出力端子に出力されるCMOS型半導体C
R発振回路において、N型トランジスタおよびP型ラン
ジスタで形成されたアナログスイッチング素子またはイ
ンバータを有するリファレンス電圧切換部を設け、該リ
ファレンス電圧切換部に前記リファレンス高電圧と前記
リファレンス低電圧を入力し、前記差動出力信号に制御
され前記二つの電圧のいずれかに切り換えて前記差動回
路の他方の入力端に入力することを特徴とするCMOS
型半導体CR発振回路。
1. A charging / discharging portion in which a charging / discharging switch transistor is connected in series via a node N to one end of a time constant element in which a time-constant capacitor and a time-limit resistor are connected in parallel is connected to the other end of the time-constant element. The low voltage side is connected between the high voltage terminal and the low voltage terminal, the node N is connected to one input terminal of the differential circuit, and the reference high voltage or the reference low voltage is connected to the other input terminal of the differential circuit. And a differential output signal of the differential circuit is fed back to the gate of the charging / discharging switch transistor through an inverter array and is output to an oscillation output terminal.
In the R oscillator circuit, a reference voltage switching unit having an analog switching element or an inverter formed of an N-type transistor and a P-type transistor is provided, and the reference high voltage and the reference low voltage are input to the reference voltage switching unit, A CMOS characterized in that it is controlled by a differential output signal and switched to one of the two voltages and input to the other input terminal of the differential circuit.
Type semiconductor CR oscillator circuit.
JP28722292A 1992-10-26 1992-10-26 Cmos-type semiconductor cr oscillation circuit Pending JPH06140884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28722292A JPH06140884A (en) 1992-10-26 1992-10-26 Cmos-type semiconductor cr oscillation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28722292A JPH06140884A (en) 1992-10-26 1992-10-26 Cmos-type semiconductor cr oscillation circuit

Publications (1)

Publication Number Publication Date
JPH06140884A true JPH06140884A (en) 1994-05-20

Family

ID=17714629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28722292A Pending JPH06140884A (en) 1992-10-26 1992-10-26 Cmos-type semiconductor cr oscillation circuit

Country Status (1)

Country Link
JP (1) JPH06140884A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955643A (en) * 1995-08-08 1997-02-25 Lg Semicon Co Ltd Timer oscillation circuit
JP2009135889A (en) * 2007-11-01 2009-06-18 Denso Corp Signal forming circuit
JP2010287575A (en) * 2002-09-04 2010-12-24 Samsung Electronics Co Ltd Inverter for liquid crystal display device
US9758435B2 (en) 2011-03-17 2017-09-12 3M Innovative Properties Company Dental ceramic article, process of production and use thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955643A (en) * 1995-08-08 1997-02-25 Lg Semicon Co Ltd Timer oscillation circuit
JP2010287575A (en) * 2002-09-04 2010-12-24 Samsung Electronics Co Ltd Inverter for liquid crystal display device
US8723780B2 (en) 2002-09-04 2014-05-13 Samsung Display Co., Ltd. Inverter for liquid crystal display
US9082369B2 (en) 2002-09-04 2015-07-14 Samsung Display Co., Ltd. Inverter for liquid crystal display
JP2009135889A (en) * 2007-11-01 2009-06-18 Denso Corp Signal forming circuit
US9758435B2 (en) 2011-03-17 2017-09-12 3M Innovative Properties Company Dental ceramic article, process of production and use thereof

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