JPH0613263Y2 - Mocvd装置 - Google Patents
Mocvd装置Info
- Publication number
- JPH0613263Y2 JPH0613263Y2 JP13687188U JP13687188U JPH0613263Y2 JP H0613263 Y2 JPH0613263 Y2 JP H0613263Y2 JP 13687188 U JP13687188 U JP 13687188U JP 13687188 U JP13687188 U JP 13687188U JP H0613263 Y2 JPH0613263 Y2 JP H0613263Y2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- reaction tube
- cooling pipe
- reaction
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims 2
- 238000001816 cooling Methods 0.000 claims description 37
- 230000012010 growth Effects 0.000 description 21
- 239000013078 crystal Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 239000000376 reactant Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13687188U JPH0613263Y2 (ja) | 1988-10-20 | 1988-10-20 | Mocvd装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13687188U JPH0613263Y2 (ja) | 1988-10-20 | 1988-10-20 | Mocvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0257965U JPH0257965U (enrdf_load_stackoverflow) | 1990-04-26 |
JPH0613263Y2 true JPH0613263Y2 (ja) | 1994-04-06 |
Family
ID=31397785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13687188U Expired - Lifetime JPH0613263Y2 (ja) | 1988-10-20 | 1988-10-20 | Mocvd装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0613263Y2 (enrdf_load_stackoverflow) |
-
1988
- 1988-10-20 JP JP13687188U patent/JPH0613263Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0257965U (enrdf_load_stackoverflow) | 1990-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0613263Y2 (ja) | Mocvd装置 | |
JPS6318618A (ja) | サセプタ−用カバ− | |
JP2001035795A (ja) | 気相成長装置 | |
JPH11240794A (ja) | エピタキシャル成長装置 | |
JPH05263248A (ja) | 配管クリーニング機構 | |
JPH0577934U (ja) | 横型気相成長装置 | |
JPH11131239A (ja) | プラズマcvd成膜方法および装置 | |
JPS63270398A (ja) | 炭化珪素単結晶の成長方法 | |
JP2717971B2 (ja) | 気相成長装置 | |
JPH0447955Y2 (enrdf_load_stackoverflow) | ||
JPH0691022B2 (ja) | 化合物半導体薄膜気相成長装置 | |
JPS61242011A (ja) | 気相成長装置 | |
JP2814436B2 (ja) | 気相成長方法及びその装置 | |
JPH01294598A (ja) | 気相成長装置 | |
JPH0597582A (ja) | ダイヤモンド薄膜の堆積方法 | |
JP3852783B1 (ja) | 水晶エピタキシャル基板 | |
JPS6117494A (ja) | 気相成長装置 | |
JPH07302761A (ja) | 気相成長方法 | |
JPH08115881A (ja) | 気相エピタキシャル成長装置および成長方法 | |
JPH0529225A (ja) | 気相成長装置 | |
JPS61155292A (ja) | 気相成長装置 | |
JPH02180795A (ja) | 炭化珪素単結晶の製造方法 | |
JPH0727868B2 (ja) | 気相成長装置 | |
JPH03232793A (ja) | 成長室のクリーニング方法 | |
JPS62230693A (ja) | 気相成長装置 |