JPH06132356A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device which is thin and excellent in heat dissipating properties and mounted with integrated circuits high in density. CONSTITUTION:A semiconductor substrate where an integrated circuit is formed is die-bonded to a heat dissipating fin 7. Input-output pins 5 are formed on one side of a multilayer ceramic board 2, and an anisotropic conductive rubber 8 is arranged between the other side of the ceramic board 2 and the integrated circuit. The anisotropic conductive rubber 8 electrically connects the integrated circuit to an inner wiring 4 provided inside the multilayer ceramic board 2. The inner wiring 4 provided inside the ceramic board 2 is electrically connected to the input-output pins 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
In particular, the present invention relates to a structure of a semiconductor device that enables high density mounting of integrated circuits.

[0002]

2. Description of the Related Art A conventional semiconductor device will be described below with reference to FIGS. 9 and 10 show
It is sectional drawing which shows the conventional semiconductor device. First, referring to FIG. 9, one surface of multilayer ceramic substrate 22 is provided with a plurality of input / output pins 25 for inputting / outputting signals to / from the outside. The semiconductor substrate 21 having an integrated circuit formed thereon is die-bonded to the other surface of the multilayer ceramic substrate 22.

The integrated circuit on the semiconductor substrate 21 is electrically connected to internal wirings 24 formed on the multilayer ceramic substrate 22 via wires 23. This wire 23
Are electrically connected to the input / output pins 25 via the internal wiring 24. A lid 26 for hermetically sealing the semiconductor substrate 21 is joined to the multilayer ceramic substrate 22 on the semiconductor substrate 21, and the lid 26 has a radiation fin for dissipating heat generated by the integrated circuit. 27 is joined. Next, referring to FIG. 10, in the semiconductor device shown in this figure, a plurality of semiconductor substrates 21 are arranged in the semiconductor device. Therefore, the thickness of the multilayer substrate 22 is as shown in FIG.
It is even thicker than that shown in. The structure other than this is similar to that of the semiconductor device shown in FIG.

Next, the operation will be described. The electric signal from the integrated circuit formed on the semiconductor substrate 21 is transmitted to the wire 2
3 and the internal wiring 24 of the multilayer ceramic substrate 22 to be transmitted to the input / output pin 25. Then, the signal is transmitted from the input / output pin 25 to the outside. On the other hand, the electric signal input to the integrated circuit is transmitted from the input / output pin 25 to the internal wiring 24. Then, it is transmitted to the integrated circuit through the wire 23 electrically connected to the internal wiring 24.

On the other hand, the lid 26 is a multilayer ceramic substrate 22.
The semiconductor substrate 21 on which the integrated circuit is formed is hermetically sealed by being bonded to. At this time, the heat generated from the integrated circuit is dissipated into the air by the radiation fins 27 joined to the lid 26.

[0006]

The conventional semiconductor device described above has the following problems. First, as shown in FIGS. 9 and 10, in the conventional semiconductor device, the semiconductor substrate 21 was electrically connected to the wiring layer formed on the multilayer ceramic substrate 22 via the wire 23. That is, a wire bond region is required in the multilayer ceramic substrate 22. Therefore, there has been a problem that the mounting density is lowered.

Further, since the wiring layer formed on the multilayer ceramic substrate 22 is formed by screen printing or the like, the width of the wiring layer in plan view becomes wide. This reduces the wiring layer density.
Therefore, it becomes necessary to increase the thickness of the multilayer ceramic substrate 22 itself. This causes a problem that the size of the semiconductor device itself becomes large.

Furthermore, since the semiconductor substrate 21 is die-bonded to the multilayer ceramic substrate 22, heat generated in the integrated circuit is more easily transferred to the multilayer ceramic substrate 22 side than to the heat radiation fins 27 side. Therefore, there is a problem that heat is accumulated in the multilayer ceramic substrate 22 and heat dissipation characteristics are deteriorated. The problem regarding the heat dissipation characteristic becomes more remarkable when the thickness of the multilayer ceramic substrate 22 is increased.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device which is capable of mounting an integrated circuit at high density, is thin, and has excellent heat dissipation characteristics. To do.

[0010]

According to one aspect, a semiconductor device according to the present invention includes a first semiconductor substrate on which an integrated circuit device having a plurality of connection terminals is formed, and each connection terminal of the integrated circuit device. A plurality of electrically connected wiring layers are formed, and a second semiconductor substrate holding the first semiconductor substrate and a second semiconductor substrate are attached to dissipate heat generated in the integrated circuit device. A heat radiation fin and an insulating substrate having a plurality of input / output terminals electrically connected to each of the wiring layers and for inputting / outputting signals to / from the outside are provided.

In another aspect of the semiconductor device according to the present invention, a semiconductor substrate having an integrated circuit device having a plurality of first electrodes formed on one surface thereof and an integrated circuit device mounted on the other surface of the semiconductor substrate are integrated. A radiating fin for dissipating heat generated in the circuit device, a plurality of input / output terminals for inputting / outputting signals to / from the outside are provided on one surface, and a plurality of second electrodes are formed on the other surface. An insulating substrate, an insulating layer, and a plurality of conductive layers that penetrate the insulating layer and electrically connect the first electrode and the second electrode, and the other surface of the integrated circuit device and the insulating substrate. And an electrode bonding layer disposed between and.

[0012]

According to one aspect of the semiconductor device according to the present invention, the first semiconductor substrate on which the integrated circuit device is formed is the second semiconductor substrate.
A plurality of wiring layers that are held on the semiconductor substrate and are electrically connected to the connection terminals of the integrated circuit device are formed on the second semiconductor substrate. As a result, the wiring width can be remarkably reduced, and the wiring layer density can be significantly improved, as compared with the conventional case where the wiring layer is formed on an insulating substrate made of ceramic or the like. This makes it possible to improve the packaging density of the first semiconductor substrate on which the integrated circuit device is formed. Further, the first semiconductor substrate is joined to the heat radiation fin side. Thereby, the heat generated in the integrated circuit is easily transferred to the heat radiation fins. Thereby,
It is possible to significantly improve the heat dissipation characteristics as compared with the conventional one.

According to another aspect of the semiconductor device of the present invention, the integrated circuit device and the insulating substrate are electrically connected by the conductive layer provided in the electrode bonding layer. Therefore, unlike the conventional case, a wire formation region is not required, and it is possible to improve the packaging density of the semiconductor substrate on which the integrated circuit device is formed. Further, since the semiconductor substrate is die-bonded to the heat radiation fin side, heat is efficiently transferred to the heat radiation fins, and the heat radiation characteristics can be improved. Further, the heat generated in the integrated circuit device is also transferred to the electrode bonding layer. Thereby,
Both the radiation fin and the electrode bonding layer allow heat to be taken from the integrated circuit device. As a result, it becomes possible to further improve the heat dissipation characteristics.

[0014]

Embodiments of the present invention will be described below with reference to FIGS. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.
Referring to FIG. 1, an input / output pin 5 for inputting / outputting a signal to / from the outside is provided on one surface of multilayer ceramic substrate 2. Internal wiring 4 is provided on the multilayer ceramic substrate 2, and the internal wiring 4 is electrically connected to the input / output pins 5. An anisotropic conductive rubber 8 that functions as an electrode bonding layer is arranged on the other surface of the multilayer ceramic substrate 2.

The term "anisotropic conductive rubber" as used herein means a rubber in which a conductive layer is provided so as to penetrate the insulating layer so that only the portion where the conductive layer is provided has conductivity. Is defined as. In this embodiment, the anisotropic conductive rubber 8 has conductivity only in the thickness direction (longitudinal direction) and maintains the insulating property in the lateral direction. On this anisotropic conductive rubber 8, the semiconductor substrate 1 having an integrated circuit formed thereon is arranged. The semiconductor substrate 1 is tie-bonded to the radiation fin 7.

The structure of the anisotropic conductive rubber 8 will be described in more detail with reference to FIG. FIG. 4 is a partially enlarged cross-sectional view of the joint between the semiconductor substrate 1 and the multilayer ceramic substrate 2. Referring to FIG. 4, the anisotropic conductive rubber 8 is an insulating layer 15 made of rubber such as silicone.
And a conductive layer 14 made of a thin metal wire or the like. Then, by sandwiching the anisotropic conductive rubber 8 between the semiconductor substrate 1 and the multilayer ceramic substrate 2, the electrode 12 formed on the semiconductor substrate 1 and the electrode 13 formed on the multilayer ceramic substrate 2 are electrically connected. Connect to. It should be noted that the electrode bonding layer has a composite structure of an insulating layer and a conductive layer as long as the conductive layer partially penetrates the insulating film, and is not limited to the anisotropic conductive rubber 8 described above. Absent.

As described above, the semiconductor substrate 1 can be electrically connected to the multilayer ceramic substrate 2 through the anisotropic conductive rubber 8, and at that time, the area substantially equal to the planar area of the semiconductor substrate 1 is obtained. It is possible to use the anisotropic conductive rubber 8 having As a result, it is not necessary to provide a bonding wire formation region. Thereby, the semiconductor substrate 1
It is possible to improve the mounting density of. Further, since the semiconductor substrate 1 is die-bonded to the heat radiation fin 7 side, it is possible to efficiently dissipate the heat generated in the integrated circuit from the heat radiation fin 7. Thereby, it becomes possible to improve the heat dissipation characteristics.

In the method of manufacturing a semiconductor device having the above structure, since the semiconductor substrate 1 is bonded to the radiation fin 7 side, the radiation fin 7 can be die-bonded to the marker with high accuracy. This can also contribute to the improvement of mounting density. In addition, the semiconductor substrate 1 is die-bonded to the radiation fins 7 in this manner, and the anisotropic conductive rubber 8 is aligned with the markers on the multilayer ceramic substrate 2.
And the semiconductor substrate 1 is hermetically sealed.

Next, the operation of the semiconductor device having the above structure will be described. First, an electric signal from the integrated circuit is transmitted to the input / output pin 5 via the anisotropic conductive rubber 8 and the internal wiring 4 of the multilayer ceramic substrate 2. As a result, the signal is transmitted to the outside. On the other hand, with respect to the input of the electric signal to the integrated circuit, the electric signal from the outside is transmitted to the integrated circuit by following the route opposite to the above route.

Next, a second embodiment based on the present invention will be described with reference to FIG. FIG. 2 is a sectional view showing a semiconductor device according to a second embodiment of the present invention. Referring to FIG. 2, in the first embodiment described above,
A single package is shown. However, a plurality of this single package 9 may be housed in a module. It can be considered that the single package 9 has a structure excluding the radiation fins 7 of the semiconductor device according to the first embodiment.

Next, a third embodiment according to the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing a semiconductor device according to a third embodiment of the present invention. Referring to FIG. 3, in the present embodiment, a plurality of semiconductor substrates 1 are provided in the semiconductor device. Instead of housing a plurality of single packages in a module as in the second embodiment, a plurality of semiconductor substrates 1 may be housed in a semiconductor device to form a module.

In each of the above-described embodiments, solder is formed on the ends of the thin metal wires in the anisotropic conductive rubber 8 or the corresponding terminals of the integrated circuit, or the corresponding terminals of the multilayer ceramic substrate 2 to form mutual solder. You may join. As described above, according to each of the above-described embodiments, the mounting density can be increased by using the anisotropic conductive rubber 8, and
By joining the semiconductor device to the radiation fin 7 side,
The heat generated in the integrated circuit can be effectively dissipated.

Next, a fourth embodiment based on the present invention will be described with reference to FIG. FIG. 5 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention. Referring to FIG. 5, in this embodiment, the silicon substrate 9 is bonded to the heat radiation fin 7 via the heat conductive rubber 10. The semiconductor substrate 1 having an integrated circuit formed thereon is bonded to the silicon substrate 9. This silicon substrate 9
May be a semiconductor substrate such as GaAs.

The electrodes of the integrated circuit formed on the semiconductor substrate 1 and the wiring layer formed on the surface of the silicon substrate 9 are electrically connected via the wires 3. In this embodiment, the wiring layer formed on the surface of the silicon substrate 9 and the multilayer ceramic substrate 2 with the anisotropic conductive rubber 8 interposed therebetween.
It is electrically connected to the wiring layer formed in. The internal wiring layer 4 of the multilayer ceramic substrate 2 and the anisotropic conductive rubber 8 are electrically connected, and the internal wiring layer 4 and the input / output pin 5 are electrically connected.

The reason why the integrated circuit can be mounted at a high density by providing the silicon substrate 9 as described above will be described with reference to FIG. FIG. 8 shows the case where the wiring layer 16 is formed on the multilayer ceramic substrate 2,
FIG. 6 is a schematic diagram for comparison with a case where a wiring layer 17 is formed on a silicon substrate 9.

Referring to FIG. 8, conventionally, semiconductor substrate 1 is die-bonded on multilayer ceramic substrate 2. Therefore, the wiring layer 16 was formed on the multilayer ceramic substrate 2. When the wiring layer is formed on the multilayer ceramic substrate 2, the wiring width becomes large as described in the conventional example. For example, when a wiring layer is formed by screen printing on a ceramic substrate 2 made of a material such as alumina, the planar width L of the formed wiring layer is L.
Is on the order of about 100 μm.

On the other hand, when the wiring layer 17 is formed on the silicon substrate 9 used in this case, the planar width L1 of the wiring layer 17 can be a wiring width on the order of submicrons. . As a result, the area where the wiring layer 17 is formed is significantly smaller than the area where the wiring layer 16 is formed. As a result, the formation area of the wiring layer can be significantly reduced, and the packaging density of the integrated circuit can be improved.

Referring again to FIG. 5, also in this embodiment, since the semiconductor substrate 1 is bonded to the heat radiation fin 7 side, the heat radiation characteristics should be improved as in the above-mentioned respective embodiments. Is possible. In the method of manufacturing the semiconductor device having the above structure according to the fourth embodiment of the present invention, first, the semiconductor substrate 1 on which the integrated circuit is formed is bonded onto the silicon substrate 9, and the silicon substrate 9 is connected to the heat radiation fin 7. To join. Then, the anisotropic conductive rubber 8 is inserted between the multilayer ceramic substrate 2 and the silicon substrate 9 to dissipate the heat radiation fins 7.
To hermetically seal the integrated circuit.

Next, the operation of the semiconductor device having the above structure according to the fourth embodiment of the present invention will be described. First, an electric signal from the integrated circuit is transmitted to the input / output pin 5 via the wire 3, the interconnection layer on the silicon substrate 9, the anisotropic conductive rubber 8 and the internal wiring 4 of the multilayer ceramic substrate 2. . As a result, the electric signal is transmitted to the outside. The input of the electric signal from the outside reaches the integrated circuit through the route opposite to the above case.

Next, a fifth embodiment according to the present invention will be described with reference to FIG. FIG. 6 is a sectional view showing a semiconductor device according to a fifth embodiment of the present invention. Referring to FIG. 6, in the above fifth embodiment,
The wire bonded to the silicon substrate 9 is shown. However, as shown in FIG. 6, flip chip bonding may be performed via the bump 11. As a result, the packaging density can be further improved.

Next, a semiconductor device according to a sixth embodiment of the present invention will be described with reference to FIG. Figure 7
FIG. 11 is a sectional view showing a semiconductor device according to a sixth embodiment of the present invention. With reference to FIG. 7, in the present embodiment, the wafer-scale semiconductor substrate 1 is bonded to the radiation fin 7 side via the heat conductive rubber 10, and the semiconductor substrate 1 and the multilayer ceramic substrate 2 are anisotropically conductive rubber. It is electrically connected via 8. As a result, it is possible to mount the integrated circuit at a high density and obtain a thin semiconductor device having high heat dissipation characteristics.

[0032]

As described above, according to the present invention, in one aspect, the semiconductor substrate on which the integrated circuit is formed is bonded to the radiation fin side via the semiconductor substrate. Since it is possible to form a wiring layer having a width much smaller than the planar width of the wiring layer formed on the insulating substrate made of ceramic or the like on the semiconductor substrate, as a result, the mounting of the integrated circuit can be achieved. It is possible to improve the density. Further, since the semiconductor substrate is bonded to the heat radiation fin side, it becomes possible to improve the heat radiation characteristics.

In another aspect, the integrated circuit device and the insulating substrate are electrically connected by the electrode bonding layer. At this time, since the electrode bonding layer is arranged so as to be sandwiched between the integrated circuit device and the insulating substrate, the bonding wire formation region can be omitted and the packaging density can be improved. Also in this case, since the semiconductor substrate 1 is bonded to the radiation fin side, the radiation characteristics are improved.

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a partially enlarged sectional view of a connecting portion between a semiconductor substrate and a multilayer ceramic substrate.

FIG. 5 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor device according to a fifth embodiment of the present invention.

FIG. 7 is a sectional view showing a semiconductor device according to a sixth embodiment of the present invention.

FIG. 8 is an explanatory diagram for explaining a difference in mounting density based on a difference in wiring width between a case where a wiring layer is formed on a multilayer ceramic substrate and a case where a wiring layer is formed on a silicon substrate.

FIG. 9 is a cross-sectional view showing an example of a conventional semiconductor device.

FIG. 10 is a cross-sectional view showing another example of a conventional semiconductor device.

[Explanation of symbols]

 1, 21 Semiconductor substrate 2, 22 Multilayer ceramic substrate 3, 23 Wire 4, 24 Internal wiring 5, 25 Input / output pin 6, 26 Lid 7, 27 Radiating fin 8 Anisotropic conductive rubber 9 Single package 10 Thermal conductive rubber 11 Bump 12, 13 Electrode 14 Conductive layer 15 Insulating layer

Claims (2)

[Claims] 1. A first semiconductor substrate on which an integrated circuit device having a plurality of connection terminals is formed, and a plurality of wiring layers electrically connected to respective connection terminals of the integrated circuit device are formed, A second semiconductor substrate holding the first semiconductor substrate; a heat radiation fin attached to the second semiconductor substrate for dissipating heat generated in the integrated circuit device; A semiconductor device comprising: an insulating substrate having a plurality of input / output terminals that are connected to each other to input / output signals to / from the outside. 2. A semiconductor substrate having an integrated circuit device having a plurality of first electrodes formed on one surface, and a semiconductor substrate mounted on the other surface of the semiconductor substrate to dissipate heat generated by the integrated circuit device. For dissipating heat, an insulating substrate on one surface of which a plurality of input / output terminals for inputting / outputting signals to / from the outside are provided and a plurality of second electrodes on the other surface, and an insulating layer. The first electrode and the second electrode penetrating the insulating layer.
A semiconductor device, comprising: a plurality of conductive layers electrically connecting to electrodes; and an electrode bonding layer disposed between the integrated circuit device and the other surface of the insulating substrate.