JPH06121232A - 赤外像の可視または近赤外像への変換システム - Google Patents

赤外像の可視または近赤外像への変換システム

Info

Publication number
JPH06121232A
JPH06121232A JP11736593A JP11736593A JPH06121232A JP H06121232 A JPH06121232 A JP H06121232A JP 11736593 A JP11736593 A JP 11736593A JP 11736593 A JP11736593 A JP 11736593A JP H06121232 A JPH06121232 A JP H06121232A
Authority
JP
Japan
Prior art keywords
light
circuit
infrared
substrate
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11736593A
Other languages
English (en)
Japanese (ja)
Inventor
Michel Wolny
ミッシェル・ウォルン
Daniel Amingual
ダニエル・アミンギュール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPH06121232A publication Critical patent/JPH06121232A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H10F39/1935—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Telescopes (AREA)
  • Closed-Circuit Television Systems (AREA)
JP11736593A 1992-05-21 1993-05-19 赤外像の可視または近赤外像への変換システム Withdrawn JPH06121232A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9206209 1992-05-21
FR9206209A FR2691579A1 (fr) 1992-05-21 1992-05-21 Système de conversion d'une image infrarouge en image visible ou proche infrarouge.

Publications (1)

Publication Number Publication Date
JPH06121232A true JPH06121232A (ja) 1994-04-28

Family

ID=9430036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11736593A Withdrawn JPH06121232A (ja) 1992-05-21 1993-05-19 赤外像の可視または近赤外像への変換システム

Country Status (5)

Country Link
US (1) US5332899A (enExample)
EP (1) EP0571268B1 (enExample)
JP (1) JPH06121232A (enExample)
DE (1) DE69319964T2 (enExample)
FR (1) FR2691579A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354366B2 (en) 2015-01-16 2019-07-16 Nec Corporation Image processing device, image processing method, and recording medium

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715250B1 (fr) * 1994-01-19 1996-04-05 Commissariat Energie Atomique Dispositif tridimensionnel de détection de rayonnement et procédé de fabrication de ce dispositif.
US5567955A (en) * 1995-05-04 1996-10-22 National Research Council Of Canada Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device
US5751344A (en) * 1995-07-05 1998-05-12 Schnee; Robert Alan Navigation system for a marine vessel in low light conditions
US5710428A (en) * 1995-08-10 1998-01-20 Samsung Electronics Co., Ltd. Infrared focal plane array detecting apparatus having light emitting devices and infrared camera adopting the same
US5703363A (en) * 1996-04-25 1997-12-30 He Holdings, Inc. Infrared to visible light image conversion device
US6157854A (en) 1999-01-13 2000-12-05 Bales Scientific Inc. Photon irradiation human pain treatment monitored by thermal imaging
US6930298B2 (en) * 2000-11-15 2005-08-16 The Johns Hopkins University Method and structure for minimizing error sources in image and position sensing detectors
WO2010023408A1 (fr) * 2008-08-25 2010-03-04 Commissariat A L'energie Atomique Imageur biface
FR3039926A1 (fr) * 2015-08-04 2017-02-10 Commissariat Energie Atomique Procede d'assemblage de dispositifs electroniques
US10754142B2 (en) * 2017-06-07 2020-08-25 The United States Of America, As Represented By The Secretary Of The Navy Electronic up-conversions of a scene using a pixelated detector array
CN111916469B (zh) * 2020-08-31 2022-06-28 山西国惠光电科技有限公司 一种新型双色InGaAs红外焦平面探测器的制备方法
FR3149130A1 (fr) * 2023-05-24 2024-11-29 Airbus Defence And Space Sas Circuit de lecture pour capteur hybride
US20250384850A1 (en) * 2024-06-18 2025-12-18 X Display Company Technology Limited Display amplifiers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR373807A (fr) * 1906-01-22 1907-05-28 Emile Adrien Vignes Jeu
FR371868A (fr) * 1906-11-28 1907-03-18 Eugene De Dorlodot Bandage élastique
US3649838A (en) * 1968-07-25 1972-03-14 Massachusetts Inst Technology Semiconductor device for producing radiation in response to incident radiation
US4205227A (en) * 1976-11-26 1980-05-27 Texas Instruments Incorporated Single junction emitter array
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
GB2014395B (en) * 1978-02-14 1982-08-18 Emi Ltd Infra-red imager
US4362938A (en) * 1980-11-14 1982-12-07 The United States Of America As Represented By The Secretary Of The Army Infrared viewing system
DE3133641A1 (de) * 1981-08-26 1983-03-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Ir-sichtgeraet
DE3531666A1 (de) * 1985-09-05 1987-03-12 Zeiss Carl Fa Vorrichtung zur erzeugung eines bildes einer szene, vorzugsweise eines waermebildes
US4914296A (en) * 1988-04-21 1990-04-03 The Boeing Company Infrared converter
FR2639784B1 (fr) * 1988-11-29 1991-01-11 Commissariat Energie Atomique Structure monolithique de detection ou d'imagerie infrarouge et son procede de fabrication
GB8829035D0 (en) * 1988-12-13 1989-07-05 Emi Plc Thorn Thermal imaging device
US4998688A (en) * 1989-06-29 1991-03-12 Hughes Aircraft Company Operating temperature hybridizing for focal plane arrays
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354366B2 (en) 2015-01-16 2019-07-16 Nec Corporation Image processing device, image processing method, and recording medium

Also Published As

Publication number Publication date
DE69319964D1 (de) 1998-09-03
DE69319964T2 (de) 1999-03-04
US5332899A (en) 1994-07-26
EP0571268A1 (fr) 1993-11-24
FR2691579A1 (fr) 1993-11-26
FR2691579B1 (enExample) 1994-07-13
EP0571268B1 (fr) 1998-07-29

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Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20000801