DE69319964D1 - System zur Umwandlung eines Infrarotbilds in ein Bild im sichtbaren oder nahen infraroten Bereich - Google Patents

System zur Umwandlung eines Infrarotbilds in ein Bild im sichtbaren oder nahen infraroten Bereich

Info

Publication number
DE69319964D1
DE69319964D1 DE69319964T DE69319964T DE69319964D1 DE 69319964 D1 DE69319964 D1 DE 69319964D1 DE 69319964 T DE69319964 T DE 69319964T DE 69319964 T DE69319964 T DE 69319964T DE 69319964 D1 DE69319964 D1 DE 69319964D1
Authority
DE
Germany
Prior art keywords
image
converting
visible
infrared
near infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319964T
Other languages
English (en)
Other versions
DE69319964T2 (de
Inventor
Michel Wolny
Daniel Amingual
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69319964D1 publication Critical patent/DE69319964D1/de
Application granted granted Critical
Publication of DE69319964T2 publication Critical patent/DE69319964T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H01L27/1467—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Closed-Circuit Television Systems (AREA)
  • Telescopes (AREA)
DE69319964T 1992-05-21 1993-05-18 System zur Umwandlung eines Infrarotbilds in ein Bild im sichtbaren oder nahen infraroten Bereich Expired - Fee Related DE69319964T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9206209A FR2691579A1 (fr) 1992-05-21 1992-05-21 Système de conversion d'une image infrarouge en image visible ou proche infrarouge.

Publications (2)

Publication Number Publication Date
DE69319964D1 true DE69319964D1 (de) 1998-09-03
DE69319964T2 DE69319964T2 (de) 1999-03-04

Family

ID=9430036

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319964T Expired - Fee Related DE69319964T2 (de) 1992-05-21 1993-05-18 System zur Umwandlung eines Infrarotbilds in ein Bild im sichtbaren oder nahen infraroten Bereich

Country Status (5)

Country Link
US (1) US5332899A (de)
EP (1) EP0571268B1 (de)
JP (1) JPH06121232A (de)
DE (1) DE69319964T2 (de)
FR (1) FR2691579A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715250B1 (fr) * 1994-01-19 1996-04-05 Commissariat Energie Atomique Dispositif tridimensionnel de détection de rayonnement et procédé de fabrication de ce dispositif.
US5567955A (en) * 1995-05-04 1996-10-22 National Research Council Of Canada Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device
US5751344A (en) * 1995-07-05 1998-05-12 Schnee; Robert Alan Navigation system for a marine vessel in low light conditions
US5710428A (en) * 1995-08-10 1998-01-20 Samsung Electronics Co., Ltd. Infrared focal plane array detecting apparatus having light emitting devices and infrared camera adopting the same
US5703363A (en) * 1996-04-25 1997-12-30 He Holdings, Inc. Infrared to visible light image conversion device
US6157854A (en) 1999-01-13 2000-12-05 Bales Scientific Inc. Photon irradiation human pain treatment monitored by thermal imaging
WO2002047174A2 (en) * 2000-11-15 2002-06-13 The Johns Hopkins University Method and structure for minimizing error sources in image and position sensing detectors
WO2010023408A1 (fr) * 2008-08-25 2010-03-04 Commissariat A L'energie Atomique Imageur biface
JP6677172B2 (ja) 2015-01-16 2020-04-08 日本電気株式会社 画像処理装置、画像処理方法およびプログラム
FR3039926A1 (fr) * 2015-08-04 2017-02-10 Commissariat Energie Atomique Procede d'assemblage de dispositifs electroniques
US10754142B2 (en) * 2017-06-07 2020-08-25 The United States Of America, As Represented By The Secretary Of The Navy Electronic up-conversions of a scene using a pixelated detector array
CN111916469B (zh) * 2020-08-31 2022-06-28 山西国惠光电科技有限公司 一种新型双色InGaAs红外焦平面探测器的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR373807A (fr) * 1906-01-22 1907-05-28 Emile Adrien Vignes Jeu
FR371868A (fr) * 1906-11-28 1907-03-18 Eugene De Dorlodot Bandage élastique
US3649838A (en) * 1968-07-25 1972-03-14 Massachusetts Inst Technology Semiconductor device for producing radiation in response to incident radiation
US4205227A (en) * 1976-11-26 1980-05-27 Texas Instruments Incorporated Single junction emitter array
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
GB2014395B (en) * 1978-02-14 1982-08-18 Emi Ltd Infra-red imager
US4362938A (en) * 1980-11-14 1982-12-07 The United States Of America As Represented By The Secretary Of The Army Infrared viewing system
DE3133641A1 (de) * 1981-08-26 1983-03-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Ir-sichtgeraet
DE3531666A1 (de) * 1985-09-05 1987-03-12 Zeiss Carl Fa Vorrichtung zur erzeugung eines bildes einer szene, vorzugsweise eines waermebildes
US4914296A (en) * 1988-04-21 1990-04-03 The Boeing Company Infrared converter
FR2639784B1 (fr) * 1988-11-29 1991-01-11 Commissariat Energie Atomique Structure monolithique de detection ou d'imagerie infrarouge et son procede de fabrication
GB8829035D0 (en) * 1988-12-13 1989-07-05 Emi Plc Thorn Thermal imaging device
US4998688A (en) * 1989-06-29 1991-03-12 Hughes Aircraft Company Operating temperature hybridizing for focal plane arrays
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays

Also Published As

Publication number Publication date
FR2691579B1 (de) 1994-07-13
US5332899A (en) 1994-07-26
EP0571268A1 (de) 1993-11-24
FR2691579A1 (fr) 1993-11-26
EP0571268B1 (de) 1998-07-29
DE69319964T2 (de) 1999-03-04
JPH06121232A (ja) 1994-04-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee