JPH0611356U - Composite semiconductor device - Google Patents

Composite semiconductor device

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Publication number
JPH0611356U
JPH0611356U JP5548492U JP5548492U JPH0611356U JP H0611356 U JPH0611356 U JP H0611356U JP 5548492 U JP5548492 U JP 5548492U JP 5548492 U JP5548492 U JP 5548492U JP H0611356 U JPH0611356 U JP H0611356U
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JP
Japan
Prior art keywords
coating agent
gel
hole
semiconductor device
composite semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5548492U
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Japanese (ja)
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JP2582256Y2 (en
Inventor
昭夫 鈴木
美枝 宮原
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日本インター株式会社
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Priority to JP1992055484U priority Critical patent/JP2582256Y2/en
Publication of JPH0611356U publication Critical patent/JPH0611356U/en
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Abstract

(57)【要約】 【目的】 ゲル状コート剤が膨張しても電子部品を破壊
させることがなく、また、エポキシ樹脂のはみ出しによ
って製品外観を損ねることがないようにすること。 【構成】 蓋体9の一部にゲル状コート剤逃げ用の貫通
孔96を設け、その下端がゲル状コート剤7の上面に開
口するようにする。これにより電子部品からの発熱でゲ
ル状コート剤7が膨張した場合でも、その増加体積は貫
通孔により吸収することができる。このため、電子部品
には膨張による応力を加えることがなく、破壊等のおそ
れもなくなり、信頼性が向上する。また、ゲル状コート
剤上に充填されたエポキシ樹脂を押し上げることもなく
なるので、製品外観を損ねることもない。
(57) [Summary] [Purpose] To prevent electronic parts from being destroyed even when the gel coating agent expands, and to prevent the appearance of the product from being damaged by the protrusion of the epoxy resin. [Structure] A through hole 96 for escaping the gel-like coating agent is provided in a part of the lid body 9, and a lower end of the through-hole 96 is opened on an upper surface of the gel-like coating agent 7. As a result, even if the gel coating agent 7 expands due to the heat generated from the electronic component, the increased volume can be absorbed by the through holes. For this reason, stress due to expansion is not applied to the electronic component, there is no fear of breakage, and reliability is improved. Further, since the epoxy resin filled on the gel coating agent is not pushed up, the appearance of the product is not spoiled.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、絶縁ケース内部に樹脂が充填されて電子部品等を樹脂封止する形式 の複合半導体装置に関するものである。 The present invention relates to a composite semiconductor device of a type in which an insulating case is filled with resin to seal an electronic component or the like with resin.

【0002】[0002]

【従来の技術】[Prior art]

この種の複合半導体装置の構造の概略を図5の斜視図及び図6の断面模式図に 示す。 これらの図において、複合半導体装置1は金属製の放熱板2を有し、該放熱板 2上に回路基板3が半田固着されている。この回路基板3は絶縁物、主としてセ ラミック板からなり、その下面には全面に亘って金属層が形成され、放熱板2へ の半田付けが可能なようにしてある。回路基板3の上面は、金属からなる図示を 省略した導体パターン層が形成され、この導体パターン層上には半導体チップ等 の電子部品が搭載・固着され、さらに回路基板3の所定の位置には、外部へ導出 するための主端子4及び信号端子5が半田固着されている。 An outline of the structure of this type of composite semiconductor device is shown in a perspective view of FIG. 5 and a schematic sectional view of FIG. In these figures, the composite semiconductor device 1 has a heat sink 2 made of metal, and a circuit board 3 is soldered and fixed onto the heat sink 2. The circuit board 3 is made of an insulating material, mainly a ceramic plate, and a metal layer is formed on the entire lower surface thereof so that it can be soldered to the heat dissipation plate 2. A conductor pattern layer (not shown) made of metal is formed on the upper surface of the circuit board 3, and electronic components such as semiconductor chips are mounted and fixed on the conductor pattern layer. The main terminals 4 and the signal terminals 5 for being led to the outside are fixed by soldering.

【0003】 放熱板2の外周縁には、両端開口の絶縁ケース6が固着されている。この絶縁 ケース6の内側には、半導体チップ、その他の電子部品が埋没する程度にシリコ ーンゴム系のゲル状コート剤7が充填されている。このゲル状コート剤7上にエ ポキシ樹脂8等の熱硬化性樹脂が充填された後、主端子4及び信号端子5を挿通 させた蓋体9が絶縁ケース6の開口端を塞ぐように配置され、エポキシ樹脂8に より固着される。 なお、絶縁ケース6の上端開口部の内側には必要に応じて凹部10が設けられ 、この凹部10内にエポキシ樹脂8が入り込むことにより、当該樹脂8の上方へ の抜け止めの役割を果たさせている。 蓋体9から外部に導出された主端子4は、該蓋体9の上面上に略直角に折曲げ られ、図6に示すような複合半導体装置1が完成する。An insulating case 6 having openings at both ends is fixed to the outer peripheral edge of the heat dissipation plate 2. The inside of the insulating case 6 is filled with a silicone rubber-based gel-like coating agent 7 to the extent that semiconductor chips and other electronic components are buried. After the thermosetting resin such as the epoxy resin 8 is filled on the gel-like coating agent 7, the lid 9 in which the main terminal 4 and the signal terminal 5 are inserted is arranged so as to close the opening end of the insulating case 6. And is fixed by the epoxy resin 8. A recess 10 is provided inside the upper opening of the insulating case 6 if necessary, and the epoxy resin 8 enters the recess 10 to prevent the resin 8 from slipping upward. I am letting you. The main terminal 4 led out from the lid 9 is bent at a substantially right angle on the upper surface of the lid 9 to complete the composite semiconductor device 1 as shown in FIG.

【0004】[0004]

【考案が解決しようとする課題】[Problems to be solved by the device]

ところで、図5及び図6に示す構造の複合半導体装置を実際に電流を流して運 転すると、回路基板3上に搭載・固着された半導体チップ及び他の電子部品から 発生した熱は、放熱板2を介して外部へ放出される。しかし、定格以上の過負荷 運転をした場合には、それに応じて発熱量も多くなる。かかる場合には、ゲル状 コート剤7の膨張量が大きくなり、約10%増加し体積が許容量を越えてしまう 。これによりゲル状コート剤7中に埋没している電子部品に応力が加わり、最悪 の場合には半導体チップ等の電子部品を破壊させてしまう。さらに、放熱板2と 絶縁ケース6との固着箇所がゲル状コート剤7の膨張によって剥がれてしまうこ とがある。また、エポキシ樹脂8を上方に押し上げて当該エポキシ樹脂8が絶縁 ケース6の上端からはみ出し、製品外観を損ねることがあるなどの解決すべき課 題があった。 By the way, when the composite semiconductor device having the structure shown in FIG. 5 and FIG. 6 is actually operated by applying an electric current, the heat generated from the semiconductor chip mounted on the circuit board 3 and the other electronic components is radiated. It is released to the outside via 2. However, when overloaded operation exceeds the rated value, the amount of heat generated increases accordingly. In such a case, the amount of expansion of the gel-like coating agent 7 becomes large, increasing by about 10%, and the volume exceeds the allowable amount. As a result, stress is applied to the electronic components buried in the gel-like coating agent 7, and in the worst case, electronic components such as semiconductor chips are destroyed. Further, the fixed part between the heat sink 2 and the insulating case 6 may be peeled off due to the expansion of the gel coating agent 7. In addition, there is a problem to be solved such that the epoxy resin 8 is pushed upward and the epoxy resin 8 protrudes from the upper end of the insulating case 6 to impair the appearance of the product.

【0005】[0005]

【考案の目的】[The purpose of the device]

本考案は、上記のような課題を解決するためになされたもので、回路基板上に 搭載・固着された半導体チップ等の電子部品からの発熱によってゲル状コート剤 7が膨張しても上記電子部品を破壊させることがなく、また、エポキシ樹脂のは み出しによって製品外観を損ねることがない複合半導体装置を提供することを目 的とする。 The present invention has been made in order to solve the above problems. Even if the gel coating agent 7 expands due to heat generated from electronic components such as semiconductor chips mounted and fixed on a circuit board, It is an object of the present invention to provide a composite semiconductor device that does not damage parts and does not spoil the appearance of the product due to the protrusion of epoxy resin.

【0006】[0006]

【問題点を解決するための手段】[Means for solving problems]

本考案の複合半導体装置は、放熱板の上面に回路基板が固着され、該回路基板 上に電子部品、外部導出用の主端子及び信号端子とが搭載され、上記放熱板の外 周に両端開口の絶縁ケースの一端が固着され、他端開口部に、主端子及び信号端 子を貫通させた蓋体が被せられ、絶縁ケースの内側の底部に電子部品を覆うよう にゲル状コート剤が充填された複合半導体装置において、前記蓋体の一部にゲル 状コート剤逃げ用の貫通孔を設け、該貫通孔の下部までゲル状コート剤が充填さ れ、該貫通孔部分を除き、前記ゲル状コート剤の上部に、熱硬化性樹脂が充填・ 硬化されることを特徴とするものである。 In the composite semiconductor device of the present invention, a circuit board is fixed on the upper surface of the heat dissipation plate, electronic parts, main terminals for external lead-out and signal terminals are mounted on the circuit board, and both end openings are formed on the outer circumference of the heat dissipation plate. One end of the insulating case is fixed, the opening of the other end is covered with a lid that penetrates the main terminals and signal terminals, and the inner bottom of the insulating case is filled with a gel coating agent to cover electronic components. In the composite semiconductor device described above, a through hole for escaping the gel-like coating agent is provided in a part of the lid, and the gel-like coating agent is filled up to the lower part of the through-hole. It is characterized in that a thermosetting resin is filled and cured on the upper part of the coating agent.

【0007】[0007]

【作用】[Action]

本考案の複合半導体装置は、蓋体の一部に貫通孔を設け、その下端がゲル状コ ート剤の上面に開口するようにしたので、電子部品からの発熱によりゲル状コー ト剤が膨張した場合でも、その増加体積は貫通孔により吸収することができる。 このため、電子部品には膨張による応力を加えることがなく、破壊等のおそれ もなくなり、信頼性が向上する。また、ゲル状コート剤上に充填されたエポキシ 樹脂を押し上げることもなくなるので、製品外観を損ねることもない。 In the composite semiconductor device of the present invention, the through hole is provided in a part of the lid body, and the lower end of the through hole is opened on the upper surface of the gel-like coating material. Even when expanded, the increased volume can be absorbed by the through holes. For this reason, the stress due to expansion is not applied to the electronic component, there is no fear of breakage, and the reliability is improved. Further, since the epoxy resin filled on the gel coating agent is not pushed up, the appearance of the product is not spoiled.

【0008】[0008]

【実施例】【Example】

以下に、本考案の実施例を図1ないし図4を参照して詳細に説明する。 図において、複合半導体装置1は、蓋体9の構成の構成を除いて、他の構成は 従来と同様の構成を有するため、同一部分には同一符号を付してその詳しい説明 は省略する。 そこで、以下に、蓋体9の構成を中心にその特徴を述べる。 蓋体9は、複数の、図では3つの端子台座部91が所定の間隔を置いて配置さ れ、隣接する端子台座部91間は、枠部92により互いに連結されている。これ により蓋体9には、端子台座部91と枠部92とにより囲まれた開口部93が形 成される。 上記端子台座部91には、主端子導出孔94、有底ナット収納孔95がそれぞ れ設けられている。 Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. In the figure, the composite semiconductor device 1 has the same structure as the conventional structure except for the structure of the lid body 9. Therefore, the same parts are denoted by the same reference numerals and detailed description thereof will be omitted. Therefore, the features of the lid 9 will be mainly described below. In the lid 9, a plurality of, in the figure, three terminal pedestals 91 are arranged at predetermined intervals, and adjacent terminal pedestals 91 are connected to each other by a frame 92. As a result, the lid 9 is formed with an opening 93 surrounded by the terminal pedestal 91 and the frame 92. The terminal pedestal portion 91 is provided with a main terminal lead-out hole 94 and a bottomed nut storage hole 95, respectively.

【0009】 上記主端子導出孔94と有底ナット収納孔95との間には、端子台座部91を 貫通するゲル状コート剤逃げ用の貫通孔96が設けられている。この貫通孔96 が設けられた蓋体9の下面には、下方に突出する筒体部99が設けられている。 上記蓋体9の両端の端子台座部91から外方にそれぞれ突起部97,98が設 けられ、一方の突起部97には、信号端子5の導出用の透孔100が形成されて いる。Between the main terminal lead-out hole 94 and the bottomed nut accommodating hole 95, a through hole 96 for escaping the gel coating agent that penetrates the terminal pedestal 91 is provided. On the lower surface of the lid 9 provided with the through hole 96, a cylindrical body portion 99 protruding downward is provided. Protrusions 97 and 98 are provided outward from the terminal pedestals 91 at both ends of the lid 9, respectively, and one of the protrusions 97 is formed with a through hole 100 for leading out the signal terminal 5.

【0010】 上記のように構成の蓋体9を絶縁ケース6の開口端に被せた後、該蓋体9の空 所部93からゲル状コート剤7を注入する。このコート剤7の注入量は、図1に 示すように、蓋体9の下面に形成された筒体部99の下端部までとする。次いで 、ゲル状コート剤7の上にエポキシ樹脂8を注入する。このエポキシ樹脂8の注 入量は、上記筒体部99の下端部から絶縁ケース6の上端開口部と同一平面にな るまでとする。ここで、注意すべきは、ゲル状コート剤逃げ用の貫通孔96内に はエポキシ樹脂8が入らないようにすることである。 上記のエポキシ樹脂8を加熱硬化させた後、有底ナット収納孔95にナット( 図示せず)を収納し、主端子4を略直角に折曲げてナットの逸脱を防止する。 なお、主端子4を折曲げることにより上記貫通孔96は塞がれるので、完成品 では上記貫通孔96の露出により外観を損ねることもない。また、他の実施例と して有底ナット収納孔95を貫通孔96として利用することも可能である。この 場合にはナット収納孔95の底の部分に蓋体9を貫通する孔を設け、必要により 筒体部99と同様な筒体部(図示省略)を設けても良い。After the lid 9 having the above-described structure is covered on the open end of the insulating case 6, the gel coating agent 7 is injected from the space 93 of the lid 9. The injection amount of the coating agent 7 is up to the lower end portion of the cylindrical body portion 99 formed on the lower surface of the lid body 9 as shown in FIG. Then, the epoxy resin 8 is injected onto the gel-like coating agent 7. The amount of epoxy resin 8 injected is from the lower end of the cylindrical body 99 to the same plane as the upper opening of the insulating case 6. Here, it should be noted that the epoxy resin 8 does not enter the through holes 96 for escaping the gel coating agent. After the epoxy resin 8 is hardened by heating, a nut (not shown) is housed in the bottomed nut housing hole 95, and the main terminal 4 is bent at a substantially right angle to prevent the nut from deviating. Since the through hole 96 is closed by bending the main terminal 4, the appearance of the finished product is not damaged by the exposure of the through hole 96. Further, as another embodiment, it is possible to use the bottomed nut storage hole 95 as the through hole 96. In this case, a hole penetrating the lid body 9 may be provided in the bottom portion of the nut storage hole 95, and if necessary, a tubular body portion (not shown) similar to the tubular body portion 99 may be provided.

【0011】[0011]

【考案の効果】[Effect of device]

以上のように、本考案の複合半導体装置は、絶縁ケース内に充填したゲル状コ ート剤の上面がゲル状コート剤逃げ用の貫通孔を介して外部に通じているので、 回路基板上の搭載部品の発熱によりゲル状コート剤が膨張しても半導体チップ等 電子部品に応力を加えることなく、該貫通孔によって逃げることができる。従っ て、放熱板の剥離、エポキシ樹脂の抜け等が無くなり信頼性が向上し、かつ、製 品外観を損ねることもなくなる。 As described above, in the composite semiconductor device of the present invention, the upper surface of the gel-like coating agent filled in the insulating case is communicated with the outside through the through-hole for escape of the gel-like coating agent. Even if the gel-like coating agent expands due to the heat generation of the mounted component, the through hole can escape without applying stress to the electronic component such as a semiconductor chip. Therefore, the peeling of the heat sink, the removal of the epoxy resin, etc. are eliminated, and the reliability is improved, and the appearance of the product is not damaged.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の一実施例を示す複合半導体装置の図2
におけるA−A線に沿う断面図である。
FIG. 1 is a view showing a composite semiconductor device according to an embodiment of the present invention.
It is sectional drawing which follows the AA line in FIG.

【図2】上記複合半導体装置の平面図である。FIG. 2 is a plan view of the composite semiconductor device.

【図3】上記複合半導体装置に用いる蓋体の平面図であ
る。
FIG. 3 is a plan view of a lid body used in the composite semiconductor device.

【図4】図3のA−A線に沿う断面図である。4 is a sectional view taken along the line AA of FIG.

【図5】従来の複合半導体装置の断面模式図である。FIG. 5 is a schematic sectional view of a conventional composite semiconductor device.

【図6】上記従来の複合半導体装置の斜視図である。FIG. 6 is a perspective view of the conventional composite semiconductor device.

【符号の説明】[Explanation of symbols]

1 複合半導体装置 2 放熱板 3 回路基板 4 主端子 5 信号端子 6 絶縁ケース 7 ゲル状コート剤 8 エポキシ樹脂 9 蓋体 91 端子台座部 92 枠部 93 空所部 94 主端子導出孔 95 有底ナット収納孔 96 ゲル状コート剤逃げ用の貫通孔 97,98 突起部 99 筒体部 100 信号端子導出用の透孔 1 Composite Semiconductor Device 2 Heat Sink 3 Circuit Board 4 Main Terminal 5 Signal Terminal 6 Insulation Case 7 Gel-like Coating Agent 8 Epoxy Resin 9 Lid 91 Terminal Block 92 Frame 93 Space Main Hole 94 Main Terminal Outlet Nut Storage hole 96 Through hole for escape of gel-like coating agent 97, 98 Projection portion 99 Cylindrical body portion 100 Through hole for leading out signal terminal

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 放熱板の上面に回路基板が固着され、該
回路基板上に電子部品、外部導出用の主端子及び信号端
子とが搭載され、上記放熱板の外周に両端開口の絶縁ケ
ースの一端が固着され、他端開口部に、主端子及び信号
端子を貫通させた蓋体が被せられ、絶縁ケースの内側の
底部に電子部品を覆うようにゲル状コート剤が充填され
た複合半導体装置において、 前記蓋体の一部にゲル状コート剤逃げ用の貫通孔を設
け、該貫通孔の下部までゲル状コート剤が充填され、該
貫通孔部分を除き、前記ゲル状コート剤の上部に、熱硬
化性樹脂が充填・硬化されてなる複合半導体装置。
1. A circuit board is fixed to the upper surface of the heat sink, and an electronic component, a main terminal for external lead-out and a signal terminal are mounted on the circuit board, and an insulating case having openings at both ends is provided on the outer circumference of the heat sink. A composite semiconductor device in which one end is fixed, an opening at the other end is covered with a lid that penetrates a main terminal and a signal terminal, and a gel-like coating agent is filled in a bottom portion inside an insulating case so as to cover an electronic component. In, a part of the lid body is provided with a through hole for escape of the gel-like coating agent, the gel-like coating agent is filled up to the lower part of the through-hole, and the through-hole portion is removed, and the upper part of the gel-like coating agent is provided. , A composite semiconductor device in which a thermosetting resin is filled and cured.
JP1992055484U 1992-07-16 1992-07-16 Composite semiconductor device Expired - Lifetime JP2582256Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1992055484U JP2582256Y2 (en) 1992-07-16 1992-07-16 Composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1992055484U JP2582256Y2 (en) 1992-07-16 1992-07-16 Composite semiconductor device

Publications (2)

Publication Number Publication Date
JPH0611356U true JPH0611356U (en) 1994-02-10
JP2582256Y2 JP2582256Y2 (en) 1998-09-30

Family

ID=12999901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1992055484U Expired - Lifetime JP2582256Y2 (en) 1992-07-16 1992-07-16 Composite semiconductor device

Country Status (1)

Country Link
JP (1) JP2582256Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010533988A (en) * 2007-07-20 2010-10-28 アーベーベー・テヒノロギー・アーゲー Semiconductor module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334355A (en) * 1989-06-29 1991-02-14 Sansha Electric Mfg Co Ltd Semiconductor module for power

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334355A (en) * 1989-06-29 1991-02-14 Sansha Electric Mfg Co Ltd Semiconductor module for power

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010533988A (en) * 2007-07-20 2010-10-28 アーベーベー・テヒノロギー・アーゲー Semiconductor module

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JP2582256Y2 (en) 1998-09-30

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