JPH06112008A - Resistor - Google Patents
ResistorInfo
- Publication number
- JPH06112008A JPH06112008A JP4259838A JP25983892A JPH06112008A JP H06112008 A JPH06112008 A JP H06112008A JP 4259838 A JP4259838 A JP 4259838A JP 25983892 A JP25983892 A JP 25983892A JP H06112008 A JPH06112008 A JP H06112008A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- sintered body
- resistor
- film
- borosilicate glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、抵抗特性のばらつきを
小さくでき、かつ湿度等に対する耐環境特性を向上でき
るとともに、電力容量を大きくできるようにした抵抗体
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor capable of reducing variations in resistance characteristics, improving environment resistance characteristics against humidity and the like, and increasing power capacity.
【0002】[0002]
【従来の技術】従来から、Ru酸化物,又はRu化合物
を主体としたサーメット抵抗体は精度の優れた抵抗素子
として広く用いられている。このような抵抗体は、例え
ばアルミナ基板の表面に、上記Ru酸化物等からなる抵
抗ペーストを印刷して厚膜の抵抗膜を形成し、これを80
0 〜900 ℃で焼き付ける。そして上記アルミナ基板の抵
抗膜の表面にガラスペーストを塗布した後、焼き付けて
ガラス膜を形成し、これにより湿度等に対する耐環境性
を向上するようにしている。2. Description of the Related Art Conventionally, a cermet resistor mainly composed of Ru oxide or Ru compound has been widely used as a resistive element having excellent accuracy. Such a resistor is formed, for example, by forming a thick resistive film on the surface of an alumina substrate by printing a resistive paste made of the above Ru oxide or the like.
Bake at 0 to 900 ° C. Then, a glass paste is applied to the surface of the resistance film of the alumina substrate and then baked to form a glass film, thereby improving environmental resistance against humidity and the like.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の抵抗体では、抵抗膜にガラスを直接コーティングす
ることから抵抗値が変化し易く、特性にばらつきが生じ
易いという問題がある。また上記ガラス膜にピンホール
が生じる場合があり、この結果湿度の高い雰囲気中では
ピンホールから水分等が侵入して抵抗特性を悪化させる
という問題もある。さらに上記従来の抵抗体では、アル
ミナ基板,抵抗膜,及びガラス膜の熱膨張率がそれぞれ
異なることから、抵抗膜の基板への密着性が低く、その
結果大きな電力容量が得られず、100mW 程度が限度であ
った。However, the above-mentioned conventional resistor has a problem that the resistance value is likely to change because the resistance film is directly coated with glass and the characteristics are likely to vary. In addition, pinholes may be formed in the glass film, and as a result, there is also a problem that moisture or the like enters through the pinholes in an atmosphere of high humidity to deteriorate resistance characteristics. Furthermore, in the above conventional resistor, since the alumina substrate, the resistive film, and the glass film have different thermal expansion coefficients, the adhesiveness of the resistive film to the substrate is low. Was the limit.
【0004】本発明は、上記従来の状況に鑑みてなされ
たもので、抵抗特性のばらつきを小さくでき、かつ湿度
に対する耐環境性を向上できるとともに、大きな電力容
量が得られる抵抗体を提供することを目的としている。The present invention has been made in view of the above-mentioned conventional circumstances, and provides a resistor capable of reducing variations in resistance characteristics, improving environmental resistance to humidity, and obtaining a large power capacity. It is an object.
【0005】[0005]
【課題を解決するための手段】そこで本発明は、セラミ
クス焼結体の内部に少なくとも1つの抵抗膜を埋設して
なり、かつ上記焼結体が、ZnOを主成分とし、これに
ホウケイ酸亜鉛ガラス,ホウケイ酸鉛亜鉛ガラスの何れ
か一方,又は両方を合計で0.1 〜10重量%含有して構成
されていることを特徴とする抵抗体である。SUMMARY OF THE INVENTION Therefore, according to the present invention, at least one resistance film is embedded inside a ceramics sintered body, and the sintered body contains ZnO as a main component, and zinc borosilicate is added thereto. The resistor is characterized by being configured to contain 0.1 to 10% by weight of either or both of glass and lead zinc borosilicate glass in total.
【0006】ここで、上記ガラスの含有量を限定したの
は、ガラス量が0.1 wt%未満では抵抗特性の改善効果が
得られないからであり、また10wt%を越えると焼結体と
抵抗膜との反応が生じ易く、その結果特性のばらつきが
大きくなり、かつ電力容量が低下するからである。Here, the above-mentioned glass content is limited because if the glass content is less than 0.1 wt%, the effect of improving the resistance characteristics cannot be obtained, and if it exceeds 10 wt%, the sintered body and the resistance film are not provided. Is likely to occur, resulting in a large variation in characteristics and a reduction in power capacity.
【0007】また、上記抵抗体を製造するには、上記Z
nOにホウケイ酸亜鉛ガラス等を添加してなる複数のセ
ラミクスシートをこれの間に上記抵抗膜を介在させて積
層し、該積層体を抵抗膜とともに一体焼結し、これによ
り焼結体を形成することとなる。In order to manufacture the resistor, the Z
A plurality of ceramic sheets obtained by adding zinc borosilicate glass or the like to nO are laminated with the resistive film interposed therebetween, and the laminated body is integrally sintered with the resistive film, thereby forming a sintered body. Will be done.
【0008】[0008]
【作用】本発明に係る抵抗体によれば、焼結体の内部に
抵抗膜を埋設し、該抵抗膜の周囲をセラミクスで覆った
ので、従来の抵抗膜に直接ガラスコーティングする場合
のような抵抗値の変化による特性のばらつきを回避でき
るとともに、ピンホールによる問題を解消でき、湿度等
に対する耐環境性を向上できる。また、上記焼結体に、
ZnOにホウケイ酸亜鉛ガラス等を所定量添加してなる
セラミクス材料を採用したので、焼結体と抵抗膜との密
着性を向上でき、しかも抵抗膜の周囲は同一材料の焼結
体で囲まれることから、放熱性を向上でき、かつ熱膨張
の差による歪も小さくでき、それだけ大きな電力容量を
得ることができる。According to the resistor of the present invention, the resistance film is embedded inside the sintered body, and the periphery of the resistance film is covered with ceramics. It is possible to avoid variations in characteristics due to changes in resistance value, solve problems due to pinholes, and improve environment resistance against humidity and the like. Further, in the above sintered body,
Since a ceramic material made by adding a predetermined amount of zinc borosilicate glass or the like to ZnO is used, the adhesiveness between the sintered body and the resistance film can be improved, and the periphery of the resistance film is surrounded by the sintered body of the same material. Therefore, heat dissipation can be improved, and distortion due to a difference in thermal expansion can be reduced, so that a larger power capacity can be obtained.
【0009】[0009]
【実施例】以下、本発明の実施例を図について説明す
る。図1及び図2は本発明の一実施例による抵抗体を説
明するための図である。図において、1は本実施例のサ
ーメット抵抗体である。この抵抗体1は略直方体状のセ
ラミクス焼結体3の内部にRu酸化物,又はその化合物
からなる抵抗膜4を埋設して構成されている。この抵抗
膜4の左, 右端面4a,4bは上記焼結体3の左, 右側
面3a,3bに露出しており、残り他の端面は焼結体3
内に封入されている。また、上記焼結体3の左, 右側面
3a,3bにはAg−Pdからなる外部電極5が被覆形
成されており、該外部電極5は上記抵抗膜4の各端面4
a,4bに電気的に接続されている。Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are views for explaining a resistor according to an embodiment of the present invention. In the figure, 1 is a cermet resistor of this embodiment. The resistor 1 is formed by embedding a resistance film 4 made of Ru oxide or a compound thereof inside a substantially rectangular parallelepiped ceramics sintered body 3. The left and right end surfaces 4a and 4b of the resistance film 4 are exposed on the left and right side surfaces 3a and 3b of the sintered body 3, and the other remaining end surfaces are the sintered body 3
It is enclosed inside. Further, the left and right side surfaces 3a, 3b of the sintered body 3 are coated with external electrodes 5 made of Ag-Pd, and the external electrodes 5 are formed on the end surfaces 4 of the resistance film 4.
It is electrically connected to a and 4b.
【0010】また、上記焼結体3は、複数のセラミクス
シート2を積層して積層体を形成し、この積層体を一体
焼結して形成されたものである。そしてこの場合に、厚
さ方向中央に位置する1枚のセラミクスシート2の上面
に上記抵抗膜4をパターン形成し、この抵抗膜4が形成
されたセラミクスシート2に残りのセラミクスシート2
をサンドイッチ状に重ね合わせている。The sintered body 3 is formed by laminating a plurality of ceramic sheets 2 to form a laminated body and integrally sintering the laminated body. In this case, the resistance film 4 is patterned on the upper surface of one ceramic sheet 2 located at the center in the thickness direction, and the remaining ceramic sheets 2 are formed on the ceramic sheet 2 on which the resistance film 4 is formed.
Are stacked like a sandwich.
【0011】そして、上記焼結体3は、ZnO粉末を主
成分とし、これに副成分としてホウケイ酸亜鉛ガラス粉
末,あるいはホウケイ酸鉛亜鉛ガラス粉末を添加してな
るセラミクス材料により構成されており、上記ガラス粉
末の添加量は合計で0.1 〜10重量%の範囲内となってい
る。The sintered body 3 is made of a ceramic material containing ZnO powder as a main component, and zinc borosilicate glass powder or lead zinc borosilicate glass powder as an auxiliary component added thereto. The total amount of the above glass powder added is within the range of 0.1 to 10% by weight.
【0012】次に本実施例の作用効果について説明す
る。本実施例の抵抗体1によれば、焼結体3に抵抗膜4
を埋設したので、この抵抗膜4の周囲はセラミクスで覆
われていることから、従来のガラスコーティングを不要
にでき、それだけ抵抗値の変化による特性のばらつきを
回避できる。また、ピンホールの問題も解消できること
から、湿度等に対する耐環境性を向上でき、寿命特性を
向上できる。Next, the function and effect of this embodiment will be described. According to the resistor 1 of this embodiment, the sintered body 3 and the resistive film 4 are provided.
Since the surroundings of the resistance film 4 are covered with ceramics, the conventional glass coating can be dispensed with, and the variation of the characteristics due to the change of the resistance value can be avoided. Further, since the problem of pinholes can be solved, the environment resistance against humidity and the like can be improved and the life characteristics can be improved.
【0013】また、上記焼結体3に、ZnOを主成分と
し、これにホウケイ酸亜鉛ガラスを添加してなるセラミ
クス材料を採用したので、焼結温度を低温化でき、これ
により得られた抵抗膜4は焼結体3との密着性が良く、
しかも上記抵抗膜4の周囲はセラミクス材料で囲まれて
いることから、放熱性を向上でき、かつ熱膨張率の差に
よる歪も少なくでき、それだけ電力容量を向上できる。
ちなみに、従来の抵抗素子では100mW 程度であったのに
対して、本実施例の抵抗体1では、従来素子の体積に比
較して小型化を図りながら10倍以上の電力容量が得られ
る。Further, since a ceramic material containing ZnO as a main component and zinc borosilicate glass added to the sintered body 3 is adopted, the sintering temperature can be lowered, and the resistance obtained by this can be obtained. The film 4 has good adhesion to the sintered body 3,
Moreover, since the periphery of the resistance film 4 is surrounded by the ceramic material, heat dissipation can be improved, and distortion due to the difference in coefficient of thermal expansion can be reduced, so that the power capacity can be improved accordingly.
By the way, in contrast to the conventional resistance element having a power consumption of about 100 mW, the resistance element 1 of the present embodiment can obtain a power capacity of 10 times or more while achieving downsizing as compared with the volume of the conventional element.
【0014】さらに、本実施例では、従来のガラスペー
ストを塗布した後、これを焼き付ける工程を不要にでき
るから、その分だけ製造コストを低減できる。さらにま
た複数の抵抗膜4を積層化できることから、同一パター
ン,同一工程で抵抗値の異なる各種の抵抗体を自由に設
計でき、用途を拡大できる。Further, in the present embodiment, since the step of baking the conventional glass paste after applying it can be eliminated, the manufacturing cost can be reduced accordingly. Furthermore, since a plurality of resistance films 4 can be laminated, various resistors having different resistance values in the same pattern and the same process can be freely designed, and the application can be expanded.
【0015】次に本実施例の抵抗体の一製造方法につい
て説明する。まず、ZnO粉末とホウケイ酸亜鉛ガラス
粉末,又はホウケイ酸鉛亜鉛ガラス粉末を配合してセラ
ミクス材料を作成する。このガラス粉末の組成比はPb
2 O 3 ,B2 O3 ,SiO2 の合計が0.1 〜10wt%とな
るよう添加する。上記セラミクス粉末に純水を加えてボ
ールミルで粉砕混合してスラリーを形成する。Next, a method of manufacturing the resistor according to this embodiment will be described.
Explain. First, ZnO powder and zinc borosilicate glass
Powder or lead zinc borosilicate glass powder blended
Create a mix material. The composition ratio of this glass powder is Pb
2O 3, B2O3, SiO2Of 0.1 to 10 wt%
So that it is added. Add pure water to the ceramic powder and add
Mill to form a slurry.
【0016】次に、上記スラリーを蒸発乾燥させて、75
0 ℃で2時間仮焼成する。この仮焼成物を粗粉砕し、こ
れに純水を加えてボールミルで微粉砕してセラミクス原
料を形成する。次いで、この原料に、エチルアルコール
及びトルエンを6:4の割合で混合した溶媒を加えてボ
ールミルで混合してスラリーを形成する。Next, the slurry is evaporated to dryness and
Preliminary calcination at 0 ° C. for 2 hours. This pre-baked product is roughly crushed, pure water is added to it, and finely crushed with a ball mill to form a ceramics raw material. Next, a solvent in which ethyl alcohol and toluene are mixed at a ratio of 6: 4 is added to this raw material and mixed by a ball mill to form a slurry.
【0017】上記スラリーをドクターブレード法によ
り、厚さ70μm のグリーンシートを形成し、このグリー
シートを乾燥させた後、所定の大きさにカットして矩形
状のセラミクスシート2を多数枚形成する。A 70 μm thick green sheet is formed from the slurry by the doctor blade method, and the green sheet is dried and then cut into a predetermined size to form a large number of rectangular ceramic sheets 2.
【0018】次に、RuO2 :Ru2 Pb2 O7 :Ru
2 Bi2 O7 =6:2:2mol 比で配合してなる組成物
にビヒクルを加えて抵抗ペーストを形成する。この抵抗
ペーストを上記1枚のセラミクスシート2の上面に印刷
して抵抗膜4を形成する。この場合、上記抵抗膜4の
左, 右端面4a,4bがセラミクスシート2の左, 右外
縁に位置し、残り他の端面はシート2の内側に位置する
よう形成する。Next, RuO 2 : Ru 2 Pb 2 O 7 : Ru
A resistance paste is formed by adding a vehicle to a composition prepared by mixing 2 Bi 2 O 7 = 6: 2: 2 mol. This resistance paste is printed on the upper surface of the one ceramic sheet 2 to form the resistance film 4. In this case, the left and right end surfaces 4a and 4b of the resistance film 4 are located at the left and right outer edges of the ceramic sheet 2, and the remaining other end surfaces are located inside the sheet 2.
【0019】次いで、上記抵抗膜4が形成されたセラミ
クスシート2の上面,及び下面に複数枚のセラミクスシ
ート2を重ね合わせて積層し、これに2t/cm2 の圧力を
加えて圧着し、これにより積層体を形成する。次に、こ
の積層体を所定の大きさにカットし、これを400 ℃に加
熱してバインダーを飛散させた後、920 ℃に昇温加熱し
て3時間焼成し、これにより焼結体3を得る。これによ
り得られた焼結体3をバレル研磨する。Next, a plurality of ceramic sheets 2 are superposed and laminated on the upper surface and the lower surface of the ceramic sheet 2 on which the resistance film 4 is formed, and a pressure of 2 t / cm 2 is applied to the ceramic sheet 2 for pressure bonding. To form a laminated body. Next, this laminated body was cut into a predetermined size, heated to 400 ° C. to scatter the binder, and then heated to 920 ° C. and baked for 3 hours, whereby sintered body 3 was obtained. obtain. The sintered body 3 thus obtained is barrel-polished.
【0020】そして、上記焼結体3の左, 右側面3a,
3bにAg:Pd=7:3wt比からなる電極ペーストを
塗布し、これを850 ℃で10分間焼き付けて外部電極5を
形成し、該外部電極5と抵抗膜4の左, 右端面4a,4
bとを電気的に接続する。これにより本実施例の抵抗体
1が製造される。The left and right side surfaces 3a of the sintered body 3 are
3b is coated with an electrode paste having a ratio of Ag: Pd = 7: 3wt and baked at 850 ° C. for 10 minutes to form the external electrode 5, and the external electrode 5 and the left and right end faces 4a, 4 of the resistance film 4 are formed.
b is electrically connected. As a result, the resistor 1 of this embodiment is manufactured.
【0021】[0021]
【表1】 [Table 1]
【0022】[0022]
【表2】 [Table 2]
【0023】次に本実施例の抵抗体1の効果を確認する
ために行った試験について説明する。この試験は、表1
及び表2に示すように、上記ガラス粉末の添加量を0.1
〜50.0wt%の範囲で変化させて上記製造方法により多数
の試料NO. 1 〜NO. 24を作成し、この各試料の抵抗値
(Ω),3CV(3σ/平均×100 %) ,及び電力容量
(mW) を測定した。表中、*印は本発明の請求範囲外を
示す。Next, a test carried out to confirm the effect of the resistor 1 of this embodiment will be described. This test is shown in Table 1.
And, as shown in Table 2, the addition amount of the above glass powder is 0.1
A large number of samples NO. 1 to NO. 24 were prepared by the above-mentioned manufacturing method while varying in the range of up to 50.0 wt%, and the resistance value (Ω), 3 CV (3σ / average × 100%), and power of each sample were prepared. The capacity (mW) was measured. In the table, * marks indicate outside the scope of claims of the present invention.
【0024】表1及び表2からも明らかなように、ガラ
ス粉末の添加量が10wt%を越える試料NO. 8,9,2
0,21では、抵抗値のばらつきが33〜53%と大きく、
しかも電力容量は110 〜684mW と低下しており、焼結体
と抵抗膜との反応による特性劣化が生じている。これに
対して、添加量が本発明範囲内の各試料NO. 1〜7,N
O. 10〜19,NO. 22〜24の場合は、何れの試料
も抵抗値のばらつきが5〜21%と小さくなっており、電
力容量が1140〜1440mWと大幅に向上していることがわか
る。As is clear from Tables 1 and 2, sample Nos. 8, 9, and 2 in which the amount of glass powder added exceeded 10 wt%.
At 0 and 21, the variation of the resistance value is as large as 33 to 53%,
Moreover, the power capacity is reduced to 110 to 684 mW, and the characteristics are deteriorated due to the reaction between the sintered body and the resistance film. On the other hand, each sample No. 1 to 7, N whose addition amount is within the range of the present invention
In the case of O. 10 to 19 and NO. 22 to 24, it is found that the variation of the resistance value of each sample is as small as 5 to 21%, and the power capacity is significantly improved to 1140 to 1440 mW. .
【0025】[0025]
【発明の効果】以上のように本発明に係る抵抗体によれ
ば、焼結体の内部に抵抗膜を埋設し、上記焼結体に、Z
nOを主成分とし、これにホウケイ酸亜鉛ガラス,ホウ
ケイ酸鉛亜鉛ガラスを0.1 〜10wt%含有してなるセラミ
クス材料を採用したので、抵抗値のばらつきを小さくで
き、かつ湿度等に対する耐環境特性を向上できる効果が
あるとともに、電力容量,及び寿命特性を向上できる効
果がある。As described above, according to the resistor of the present invention, the resistance film is embedded in the inside of the sintered body, and Z is added to the sintered body.
Since a ceramic material containing nO as a main component and containing 0.1 to 10 wt% of zinc borosilicate glass and lead zinc borosilicate glass is used, it is possible to reduce variations in resistance value and to obtain environmental resistance characteristics against humidity and the like. This has the effect of improving the power capacity and life characteristics.
【図1】本発明の一実施例による抵抗体を説明するため
の断面図である。FIG. 1 is a cross-sectional view illustrating a resistor according to an exemplary embodiment of the present invention.
【図2】上記実施例の抵抗体の製造方法を示す分解斜視
図である。FIG. 2 is an exploded perspective view showing the method of manufacturing the resistor according to the above-described embodiment.
1 抵抗体 3 焼結体 4 抵抗膜 1 Resistor 3 Sintered body 4 Resistive film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 富永 亨 京都府長岡京市天神2丁目26番10号 株式 会社村田製作所内 (72)発明者 後 外茂昭 京都府長岡京市天神2丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tominaga Toru, Nagaokakyo City, Kyoto Prefecture 2 26-10 Ten shares, Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd.
Claims (1)
つの抵抗膜を埋設してなり、かつ上記焼結体が、ZnO
を主成分とし、これに副成分としてホウケイ酸亜鉛ガラ
ス,及びホウケイ酸鉛亜鉛ガラスの一方又は両方を合計
で0.1 〜10重量%含有してなることを特徴とする抵抗
体。1. At least one inside the ceramic sintered body.
Two resistance films are embedded, and the sintered body is ZnO.
A resistor containing, as a main component, one or both of a zinc borosilicate glass and a lead zinc borosilicate glass as a subcomponent in a total amount of 0.1 to 10% by weight.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25983892A JP3189419B2 (en) | 1992-09-29 | 1992-09-29 | Resistor |
US08/127,747 US5430429A (en) | 1992-09-29 | 1993-09-27 | Ceramic resistor wherein a resistance film is embedded |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25983892A JP3189419B2 (en) | 1992-09-29 | 1992-09-29 | Resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06112008A true JPH06112008A (en) | 1994-04-22 |
JP3189419B2 JP3189419B2 (en) | 2001-07-16 |
Family
ID=17339695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25983892A Expired - Fee Related JP3189419B2 (en) | 1992-09-29 | 1992-09-29 | Resistor |
Country Status (1)
Country | Link |
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JP (1) | JP3189419B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8783433B2 (en) | 2010-10-02 | 2014-07-22 | Ford Global Technologies, Llc | Dry-clutch transmission with cooling techniques |
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1992
- 1992-09-29 JP JP25983892A patent/JP3189419B2/en not_active Expired - Fee Related
Also Published As
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JP3189419B2 (en) | 2001-07-16 |
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