JPH0610676Y2 - 低温プラズマ処理装置 - Google Patents

低温プラズマ処理装置

Info

Publication number
JPH0610676Y2
JPH0610676Y2 JP1988068013U JP6801388U JPH0610676Y2 JP H0610676 Y2 JPH0610676 Y2 JP H0610676Y2 JP 1988068013 U JP1988068013 U JP 1988068013U JP 6801388 U JP6801388 U JP 6801388U JP H0610676 Y2 JPH0610676 Y2 JP H0610676Y2
Authority
JP
Japan
Prior art keywords
insulating material
processing chamber
low temperature
vacuum reaction
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988068013U
Other languages
English (en)
Japanese (ja)
Other versions
JPH01173932U (me
Inventor
博宣 川原
稔 空岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1988068013U priority Critical patent/JPH0610676Y2/ja
Publication of JPH01173932U publication Critical patent/JPH01173932U/ja
Application granted granted Critical
Publication of JPH0610676Y2 publication Critical patent/JPH0610676Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP1988068013U 1988-05-25 1988-05-25 低温プラズマ処理装置 Expired - Lifetime JPH0610676Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988068013U JPH0610676Y2 (ja) 1988-05-25 1988-05-25 低温プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988068013U JPH0610676Y2 (ja) 1988-05-25 1988-05-25 低温プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPH01173932U JPH01173932U (me) 1989-12-11
JPH0610676Y2 true JPH0610676Y2 (ja) 1994-03-16

Family

ID=31293343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988068013U Expired - Lifetime JPH0610676Y2 (ja) 1988-05-25 1988-05-25 低温プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPH0610676Y2 (me)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100420A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method for oxidized silicon film
JPS61155031U (me) * 1985-03-19 1986-09-26
JPS6246265U (me) * 1985-09-10 1987-03-20
JPS6265836U (me) * 1985-10-16 1987-04-23

Also Published As

Publication number Publication date
JPH01173932U (me) 1989-12-11

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