JPH0610673Y2 - 光cvd装置 - Google Patents

光cvd装置

Info

Publication number
JPH0610673Y2
JPH0610673Y2 JP4138887U JP4138887U JPH0610673Y2 JP H0610673 Y2 JPH0610673 Y2 JP H0610673Y2 JP 4138887 U JP4138887 U JP 4138887U JP 4138887 U JP4138887 U JP 4138887U JP H0610673 Y2 JPH0610673 Y2 JP H0610673Y2
Authority
JP
Japan
Prior art keywords
pressure oil
vapor pressure
irradiation window
low vapor
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4138887U
Other languages
English (en)
Japanese (ja)
Other versions
JPS63149522U (enrdf_load_stackoverflow
Inventor
金雄 渡邉
行雄 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP4138887U priority Critical patent/JPH0610673Y2/ja
Publication of JPS63149522U publication Critical patent/JPS63149522U/ja
Application granted granted Critical
Publication of JPH0610673Y2 publication Critical patent/JPH0610673Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP4138887U 1987-03-20 1987-03-20 光cvd装置 Expired - Lifetime JPH0610673Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4138887U JPH0610673Y2 (ja) 1987-03-20 1987-03-20 光cvd装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4138887U JPH0610673Y2 (ja) 1987-03-20 1987-03-20 光cvd装置

Publications (2)

Publication Number Publication Date
JPS63149522U JPS63149522U (enrdf_load_stackoverflow) 1988-10-03
JPH0610673Y2 true JPH0610673Y2 (ja) 1994-03-16

Family

ID=30856344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4138887U Expired - Lifetime JPH0610673Y2 (ja) 1987-03-20 1987-03-20 光cvd装置

Country Status (1)

Country Link
JP (1) JPH0610673Y2 (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS63149522U (enrdf_load_stackoverflow) 1988-10-03

Similar Documents

Publication Publication Date Title
KR100605799B1 (ko) 반도체 처리 시스템의 매엽식 열처리 장치
JPS61127121A (ja) 薄膜形成方法
JPH05163573A (ja) 薄膜形成装置および薄膜形成方法
JPH0610673Y2 (ja) 光cvd装置
JPS60161616A (ja) 半導体ウエハの赤外線加熱装置
US6914011B2 (en) Film deposition system and method of fabricating semiconductor device employing the film deposition system
JPS60189927A (ja) 気相反応容器
JPH04188622A (ja) 半導体装置の製造方法及びその製造装置
US4856458A (en) Photo CVD apparatus having no ultraviolet light window
JPS6224630A (ja) 熱酸化膜形成方法及びその装置
JP3174787B2 (ja) 光cvd装置
JPH0530298B2 (enrdf_load_stackoverflow)
JPH07108836B2 (ja) 減圧cvd装置
JP2004087846A (ja) 多結晶薄膜の形成方法
JPS59112613A (ja) 気相成長装置
JPS6118124A (ja) 薄膜形成装置
JPH0689455B2 (ja) 薄膜形成方法
JPS6118125A (ja) 薄膜形成装置
JPS60101927A (ja) 薄膜製造装置
JPS6118123A (ja) 薄膜形成装置
JP3112521B2 (ja) 光励起プロセス装置
JPH08262251A (ja) 光導波路成膜装置
JPS61196529A (ja) 薄膜形成装置
JPH0638402B2 (ja) 気相反応容器
JPS6281020A (ja) 光cvd装置