JPH06103813A - High frequency dielectric ceramic composition - Google Patents

High frequency dielectric ceramic composition

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Publication number
JPH06103813A
JPH06103813A JP3327352A JP32735291A JPH06103813A JP H06103813 A JPH06103813 A JP H06103813A JP 3327352 A JP3327352 A JP 3327352A JP 32735291 A JP32735291 A JP 32735291A JP H06103813 A JPH06103813 A JP H06103813A
Authority
JP
Japan
Prior art keywords
composition
dielectric ceramic
high frequency
oxide
frequency dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3327352A
Other languages
Japanese (ja)
Inventor
Tatsuya Kikuchi
竜哉 菊池
Osamu Taguchi
修 田口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
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Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP3327352A priority Critical patent/JPH06103813A/en
Publication of JPH06103813A publication Critical patent/JPH06103813A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a high frequency dielectric ceramic composition having high dielectric constant, large Q value and a small temperature factor for resonant frequency made variable by changing the composition of the dielectric ceramic. CONSTITUTION:A high frequency dielectric ceramic is formed of BaO, TiO2, Nd2O3, Bi2O3, Al2O3) and MnO, wherein when a main component is represented by xBaO+yTiO2+yNd2O3, x, y and z are within ranges represented respectively by 9=<x=<18, 65=<y=<73 and 14=<z=<19 (x+y+z=100), Bi2O3 of 3.0-11.0 weight percent, Al2O3 of 0.1-2.0 weight percent and MnO of 0.1-1.0 weight percent added as additives.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高周波用誘電体磁器組
成物に係り、特に比誘電率εが大きく、マイクロ波周波
数帯において、Qが大きく更に共振周波数の温度係数
(以下TCfという)が小さく、かつ組成をかえること
によりTCfを変化させることのできる高周波用誘電体
共振器用の誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric ceramic composition, and in particular, has a large relative permittivity ε, a large Q in a microwave frequency band, and a temperature coefficient (hereinafter referred to as TCf) of a resonance frequency. The present invention relates to a dielectric ceramic composition for a high frequency dielectric resonator, which is small and whose TCf can be changed by changing the composition.

【0002】[0002]

【従来の技術】従来の高周波用誘電体共振器用として使
用される誘電体磁器組成物としては、BaO−TiO2
−Nd2 3 −Bi2 3 が知られている。
2. Description of the Related Art A conventional dielectric ceramic composition used for a high-frequency dielectric resonator is BaO--TiO 2
-Nd 2 O 3 -Bi 2 O 3 are known.

【0003】[0003]

【発明が解決しようとする課題】ところで、このような
従来の組成物で高周波用誘電体共振器を構成すると、T
Cfが+10ppm 以上となり、0ppm 付近のTCfのも
のが得られず、また+10〜+30ppm の範囲における
Qが1000以下であり、誘電体素子として使用したと
き、実用可能なQとはいえなかった。
By the way, when a high frequency dielectric resonator is constructed with such a conventional composition, T
Cf was +10 ppm or more, TCf in the vicinity of 0 ppm could not be obtained, and Q in the range of +10 to +30 ppm was 1000 or less, which was not a practical Q when used as a dielectric element.

【0004】しかも形成された誘電体共振器の温度安定
性に問題があった。また、従来の組成物では、Q値がや
や低いために、誘電体材料として幅広いニーズに対応し
きれないという問題点もあった。さらにこの組成物は、
焼結性があまり良くなく、これがそのεやQ値の低下の
原因になっていた。
Moreover, there is a problem in the temperature stability of the formed dielectric resonator. In addition, the conventional composition has a problem that it cannot meet a wide range of needs as a dielectric material because the Q value is slightly low. In addition, this composition
The sinterability was not so good, which caused the decrease of the ε and Q value.

【0005】従って本発明の目的は、比誘電率εが大き
くマイクロ波周波数帯においてQが大きく、さらにTC
fが小さい上に、その組成を変えることによってこのT
Cfを変化させることのできる高周波用誘電体磁器組成
物を提供することである。
Therefore, an object of the present invention is to have a large relative permittivity ε, a large Q in the microwave frequency band, and a TC
f is small, and by changing its composition, this T
It is an object of the present invention to provide a high frequency dielectric porcelain composition capable of changing Cf.

【0006】[0006]

【課題を解決するための手段】前記の目的を達成するた
め、本発明者等は鋭意研究の結果、高周波用誘電体磁器
組成物としてBaO、TiO2 、Nd2 3 、Bi2
3 、Al2 3 、MnOから成る組成物で、その組成式
を、 xBaO+yTiO2 +zNd2 3 と表したとき、 9≦x≦18 モル% 65≦y≦73 モル% 14≦z≦19 モル%(ただしx+y+z=10
0) となる範囲の主成分に対し、 Bi2 3 を3.1 〜11.0 wt% Al2 3 を0.1 〜2.0 wt% MnO を0.1 〜1.0 wt% 各々添加することにより、目的とする誘電体磁器組成物
が得られることを見出した。
[Means for Solving the Problems] In order to achieve the above object, the inventors of the present invention have conducted extensive studies and as a result, have found that BaO, TiO 2 , Nd 2 O 3 and Bi 2 O as high frequency dielectric ceramic compositions.
3 , a composition consisting of Al 2 O 3 and MnO, the composition formula of which is expressed as xBaO + yTiO 2 + zNd 2 O 3 is 9 ≦ x ≦ 18 mol% 65 ≦ y ≦ 73 mol% 14 ≦ z ≦ 19 mol % (However, x + y + z = 10
0) In the range of the main component, Bi 2 O 3 is added to 3.1 to 11.0 wt% Al 2 O 3 is added to 0.1 to 2.0 wt% MnO is added to 0.1 to 1.0 wt%. It has been found that a composition is obtained.

【0007】[0007]

【作用】前記の高周波用誘電体磁器組成物は、εが65
以上と大きく、無負荷時のQが1000以上と大きい上
に、TCfが−5〜+30ppm と0付近で、範囲が小さ
なものが得られる。これにより高周波誘電体共振器用と
して有用な誘電体磁器組成物を得ることができる。
The dielectric ceramic composition for high frequencies described above has an ε of 65.
In addition to the above, the Q without load is as large as 1000 or more, and in addition, TCf is -5 to +30 ppm, which is close to 0, and the range is small. This makes it possible to obtain a dielectric ceramic composition which is useful for high frequency dielectric resonators.

【0008】[0008]

【実施例】本発明の実施例を以下に説明する。 (1) 第1実施例 出発原料としてBaCO3 、TiO2 、Nd2 3 、B
2 3 、Al2 3、MnOを、最終的な焼結後の組
成が、後掲の表1に示す如くなるように秤量し、調合す
る。
EXAMPLES Examples of the present invention will be described below. (1) First Example BaCO 3 , TiO 2 , Nd 2 O 3 and B as starting materials
i 2 O 3 , Al 2 O 3 and MnO are weighed and mixed so that the final composition after sintering is as shown in Table 1 below.

【0009】この微分末をボールミルで20時間湿式混
合した後に脱水、乾燥する。次に脱水、乾燥した組成物
を1000〜1200℃で約2時間仮焼成し、その後こ
の仮焼成体を粗粉砕し、更に湿式粉砕する。
This differential powder is wet mixed in a ball mill for 20 hours, dehydrated and dried. Next, the dehydrated and dried composition is calcined at 1000 to 1200 ° C. for about 2 hours, and then the calcined body is roughly pulverized and further wet pulverized.

【0010】このようにして得られた粉末にバインダー
を適量加えて造粒する。次にこれを直径φ12.7mm、高さ
7mmの円柱状に加圧成形した後に、1200〜1400
℃で約2時間焼成する。
An appropriate amount of binder is added to the powder thus obtained and granulated. Next, after press-molding this into a columnar shape with a diameter of 12.7 mm and a height of 7 mm, 1200-1400
Bake at about 2 hours.

【0011】それから、かくして得られた誘電体磁器を
直径φ10mm、高さ5mmの寸法に加工し、表1に示す如
き諸特性を測定する。測定方法は、2枚の平行な金属板
の間に、前記により得られた円柱状誘電体をはさんで構
成される共振器のTE011 モードにより、25℃、4G
Hzで行い、ε及びQを求めた。
Then, the dielectric ceramic thus obtained is processed to have a diameter of 10 mm and a height of 5 mm, and various characteristics shown in Table 1 are measured. The measuring method is 4 ° C. at 25 ° C. by the TE 011 mode of the resonator constituted by sandwiching the cylindrical dielectric obtained as described above between two parallel metal plates.
Was performed at Hz to determine ε and Q.

【0012】またTCfは、−40℃から+80℃の温
度変化における共振周波数の変化から求める。このよう
にして得られた測定結果を表1に示す。なお表1のうち
*印を付した試料は本発明の範囲外のものであるが、本
発明の実施例のものと比較のために提示したものであ
る。
Further, TCf is obtained from the change in resonance frequency due to the temperature change from -40 ° C to + 80 ° C. The measurement results thus obtained are shown in Table 1. The samples marked with * in Table 1 are outside the scope of the present invention, but are presented for comparison with those of the examples of the present invention.

【0013】[0013]

【表1】 [Table 1]

【0014】この表1から明らかな如く、本発明の誘電
体磁器組成物は、εが60以上、Qが1000以上と大
きく、しかもTCfは−5〜+30ppm と比較的小さな
値となる。さらに主成分の組成は同一でも、添加物の量
を変えることによりTCfを−側から+側に変えること
ができる(表1の試料No.15〜18参照)。
As is clear from Table 1, the dielectric ceramic composition of the present invention has a large ε of 60 or more and a Q of 1000 or more, and has a relatively small TCf value of -5 to +30 ppm. Further, even if the composition of the main component is the same, TCf can be changed from the − side to the + side by changing the amount of the additive (see Sample Nos. 15 to 18 in Table 1).

【0015】次に本発明の高周波用誘電体磁器組成物の
組成範囲の限定理由を説明する。BaOのモル比xが9
未満であると、Qが相当小さくなり、実用的でない(表
1の試料No.12参照)。またこのxが18を超えると
Qが相当小さい上にTCfが+側に大きくなる(表1の
試料No.10参照)。
Next, the reasons for limiting the composition range of the high frequency dielectric ceramic composition of the present invention will be explained. The molar ratio x of BaO is 9
When it is less than Q, Q is considerably small, which is not practical (see Sample No. 12 in Table 1). When x exceeds 18, Q is considerably small and TCf is large on the + side (see Sample No. 10 in Table 1).

【0016】TiO2 のモル比yが65未満であると焼
結性が悪く、ε、Qともに相当小さく実用的でない(表
1の試料No.13参照)。またこのyが73を超える
と、やはりε、Qの値が相当小さく実用的でなかったり
(表1の試料No.12参照)、Qの値が小さい(表1の
試料No.11参照)。
If the molar ratio y of TiO 2 is less than 65, the sinterability is poor, and both ε and Q are considerably small and impractical (see sample No. 13 in Table 1). When y exceeds 73, the values of ε and Q are too small to be practical (see Sample No. 12 in Table 1), or the value of Q is small (see Sample No. 11 in Table 1).

【0017】Nd2 3 のモル比zが14未満である
と、Qが小さく実用的でない(表1の試料No.10、1
1参照)。またこのzが19を超えると、これまたε、
Qが相当小さく実用に適さない(表1の試料No.12、
13参照)。
When the molar ratio z of Nd 2 O 3 is less than 14, Q is small and it is not practical (Sample No. 10, 1 in Table 1).
1). Also, when this z exceeds 19, this is also ε,
Q is considerably small and not suitable for practical use (Sample No. 12 in Table 1,
13).

【0018】Bi2 3 の添加量が3wt%未満である
と、TCfが+側に大きく増加する(表1の試料No.2
0、21参照)。またこの添加量が11wt%を超えると
Qが小さくなる(表1の試料No.24参照)。
When the added amount of Bi 2 O 3 is less than 3 wt%, TCf is greatly increased to the + side (Sample No. 2 in Table 1).
0, 21). Further, when this addition amount exceeds 11 wt%, Q becomes small (see sample No. 24 in Table 1).

【0019】Al2 3 の添加量が0.1 wt%未満である
とTCfが+側に大きく増加する(表1の試料No.14
参照)。またこの添加量が2wt%を超えると、ε、Qが
小さくなる(表1の試料No.19参照)。
When the amount of Al 2 O 3 added is less than 0.1 wt%, TCf greatly increases to the + side (Sample No. 14 in Table 1).
reference). Further, when the added amount exceeds 2 wt%, ε and Q become small (see Sample No. 19 in Table 1).

【0020】MnOの添加量が0.1 wt%未満であると焼
結性が悪く、ε、Qの値が小さくなる(表1の試料No.
25参照)。そしてこの添加量が1.0 wt%を超えるとQ
が小さくなるのみならずTCfも大きくなる(表1の試
料No.28参照)。
When the amount of MnO added is less than 0.1 wt%, the sinterability is poor and the values of ε and Q are small (Sample No. 1 in Table 1).
25). And when this addition amount exceeds 1.0 wt%, Q
Not only decreases but TCf also increases (see sample No. 28 in Table 1).

【0021】(2) 第2実施例 本発明の特許請求の範囲の請求項2の発明を第2実施例
として説明する。出発原料として、BaCO3 、TiO
2 、Nd2 3 、La2 3 、Pr6 11、Bi
2 3 、Al2 3 、MnOを最終的な焼結後の組成
が、後掲の表2に示す如くなるように秤量し、調合す
る。
(2) Second Embodiment A second embodiment of the invention of claim 2 of the claims of the present invention
As described below. As a starting material, BaCO3, TiO
2, Nd2O3, La2O3, Pr6O 11, Bi
2O3, Al2O3, MnO composition after final sintering
Are weighed and mixed as shown in Table 2 below.
It

【0022】そして前記第1実施例と同様の製造工程に
より、誘電体磁器組成物を製造し、表2に示す諸特性を
測定する。測定方法や測定条件は前記第1実施例と同様
である。
Then, a dielectric ceramic composition is manufactured by the same manufacturing process as in the first embodiment, and various characteristics shown in Table 2 are measured. The measuring method and the measuring conditions are the same as those in the first embodiment.

【0023】得られた測定結果を表2に示す。なお表2
のうち*印を付したものは本発明の範囲外のものである
が、本発明の実施例のものと比較のために提示したもの
である。
Table 2 shows the obtained measurement results. Table 2
Of these, those marked with * are outside the scope of the present invention, but are presented for comparison with those of the examples of the present invention.

【0024】[0024]

【表2】 [Table 2]

【0025】この表2から明らかな如く、本発明の請求
項2、つまり第2実施例の組成物は、εが70以上、Q
が1000以上と大きい値にもかかわらず、TCfが3
0ppm 以下と比較的小さな値となる。
As is apparent from Table 2, the composition of claim 2 of the present invention, that is, the composition of the second embodiment, has ε of 70 or more and Q
TCf is 3 despite the large value of 1000 or more.
It is a relatively small value of 0 ppm or less.

【0026】次に本発明における請求項2の誘電体磁器
組成物の組成範囲について説明する。なお第1実施例つ
まり請求項1の発明と同じ成分については省略する。N
2 3 の一部を置換したLa2 3 の比率mが0.1 よ
り大きくなると、Qが小さくなるのみならず、TCfが
+側に大きくなる(表2の試料No.6、9参照)。
Next, the composition range of the dielectric ceramic composition according to the second aspect of the present invention will be described. The same components as those of the first embodiment, that is, the invention of claim 1 will be omitted. N
When the ratio m of La 2 O 3 in which a part of d 2 O 3 is substituted becomes larger than 0.1, not only Q becomes smaller but TCf becomes larger on the + side (see Sample Nos. 6 and 9 in Table 2). .

【0027】またNd2 3 の一部を置換したPr6
11の比率nが0.1 より大きくなると、やはりTCfが+
側に大きくなる(表2の試料No.3、10参照)。
Further, Pr 6 O in which a part of Nd 2 O 3 is substituted
When the ratio n of 11 becomes larger than 0.1, TCf becomes +
It increases toward the side (see Sample Nos. 3 and 10 in Table 2).

【0028】[0028]

【発明の効果】本発明の高周波用誘電体磁器組成物は、
比誘電率が大きく、TCfが比較的小さいため、従来の
誘電体磁器組成物よりも厳しい周波数温度安定性の要求
に応えることが可能となった。
The high frequency dielectric ceramic composition of the present invention comprises:
Since the relative dielectric constant is large and the TCf is relatively small, it becomes possible to meet the demand for frequency temperature stability that is more severe than that of the conventional dielectric ceramic composition.

【0029】またAl2 3 やBi2 3 の添加量を変
えることによってTCfの値を、0ppm を中心として+
側や−側に適宜選択することが可能になった。さらにQ
の値も従来の組成のものより約10〜20%大きくなっ
ており、低損失のものとすることができる。これはAl
2 3 の添加による効果と考えられる。
By changing the amount of Al 2 O 3 or Bi 2 O 3 added, the value of TCf can be adjusted to 0 ppm +
It has become possible to appropriately select the side or the-side. Furthermore Q
The value of is about 10 to 20% larger than that of the conventional composition, and can be low loss. This is Al
This is considered to be the effect of the addition of 2 O 3 .

【0030】MnOを添加することにより焼結性が向上
し、TCfを改善したことによりおこるεの低下を、こ
れによりカバーすることができる。このようなすぐれた
特性を有する本発明の誘電体磁器組成物は、例えば自動
車電話共用器、段間フィルタに代表されるバンドパスフ
ィルタや電圧制御発振素子等の共振素子の材料として使
用することができる。更にマイクロ波集積回路基板、高
周波電力用コンデンサ材料としても使用可能である。
By adding MnO, the sinterability is improved, and the decrease of ε caused by the improvement of TCf can be covered thereby. The dielectric porcelain composition of the present invention having such excellent characteristics can be used as a material for a resonant element such as a bandpass filter represented by an automobile telephone duplexer, an interstage filter, a voltage controlled oscillation element, or the like. it can. Further, it can be used as a microwave integrated circuit board and a capacitor material for high frequency power.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 酸化バリウムと酸化チタンと酸化ネオジ
ウムと酸化ビスマスと酸化アルミニウムと酸化マンガン
から成る組成物で、その組成式を、 xBaO+yTiO2 +zNd2 3 と表したとき、 9≦x≦18 モル% 65≦y≦73 モル% 14≦z≦19 モル%(ただしx+y+z=10
0) となる範囲の主成分に対し、 Bi2 3 を3.0 〜11.0 wt% Al2 3 を0.1 〜2.0 wt% MnO を0.1 〜1.0 wt% 各々添加することを特徴とする高周波用誘電体磁器組成
物。
1. A composition comprising barium oxide, titanium oxide, neodymium oxide, bismuth oxide, aluminum oxide and manganese oxide, wherein the composition formula is expressed as xBaO + yTiO 2 + zNd 2 O 3, and 9 ≦ x ≦ 18 mol % 65 ≦ y ≦ 73 mol% 14 ≦ z ≦ 19 mol% (where x + y + z = 10
To range the main component of which is 0), high frequency dielectric, characterized in that Bi 2 O 3 and 3.0 ~11.0 wt% Al 2 O 3 is added each 0.1 to 1.0 wt% of 0.1 to 2.0 wt% MnO Porcelain composition.
【請求項2】 主成分の組成式において、酸化ネオジウ
ムの一部を酸化ランタン、酸化プラセオジウムの少なく
とも一種で置換し、その組成式を、 xBaO+yTiO2 +z{(Nd2 3)1-m-n (La
2 3)m (Pr6 11n }と表したとき、 0≦m≦0.10 0≦n≦0.10 となる範囲にあることを特徴とする請求項1記載の高周
波用誘電体磁器組成物。
2. In the composition formula of the main component, a part of neodymium oxide is replaced with at least one of lanthanum oxide and praseodymium oxide, and the composition formula is expressed as xBaO + yTiO 2 + z {(Nd 2 O 3 ) 1-mn (La
2. The high frequency dielectric ceramic composition according to claim 1, wherein when expressed as 2 O 3 ) m (Pr 6 O 11 ) n }, 0 ≦ m ≦ 0.10 0 ≦ n ≦ 0.10. .
JP3327352A 1991-12-11 1991-12-11 High frequency dielectric ceramic composition Pending JPH06103813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3327352A JPH06103813A (en) 1991-12-11 1991-12-11 High frequency dielectric ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3327352A JPH06103813A (en) 1991-12-11 1991-12-11 High frequency dielectric ceramic composition

Publications (1)

Publication Number Publication Date
JPH06103813A true JPH06103813A (en) 1994-04-15

Family

ID=18198188

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH06103813A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100808472B1 (en) * 2006-12-01 2008-03-03 (주)써모텍 Dielectric ceramic compositions and manufacturing method thereof
JP2010235336A (en) * 2009-03-30 2010-10-21 Kyocera Corp Dielectric ceramic and dielectric resonator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100808472B1 (en) * 2006-12-01 2008-03-03 (주)써모텍 Dielectric ceramic compositions and manufacturing method thereof
JP2010235336A (en) * 2009-03-30 2010-10-21 Kyocera Corp Dielectric ceramic and dielectric resonator

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