JPH059945B2 - - Google Patents
Info
- Publication number
- JPH059945B2 JPH059945B2 JP57050886A JP5088682A JPH059945B2 JP H059945 B2 JPH059945 B2 JP H059945B2 JP 57050886 A JP57050886 A JP 57050886A JP 5088682 A JP5088682 A JP 5088682A JP H059945 B2 JPH059945 B2 JP H059945B2
- Authority
- JP
- Japan
- Prior art keywords
- bias contact
- detector
- output
- contact
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/193—Infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8109928 | 1981-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57175224A JPS57175224A (en) | 1982-10-28 |
| JPH059945B2 true JPH059945B2 (enrdf_load_stackoverflow) | 1993-02-08 |
Family
ID=10520772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57050886A Granted JPS57175224A (en) | 1981-03-30 | 1982-03-29 | Photoconductive detector |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57175224A (enrdf_load_stackoverflow) |
| DE (1) | DE3211769C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2502846B1 (enrdf_load_stackoverflow) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1488258A (en) * | 1974-11-27 | 1977-10-12 | Secr Defence | Thermal radiation imaging devices and systems |
| DE2702571C3 (de) * | 1977-01-22 | 1982-02-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Kontaktstruktur für ein Vielfach- Halbleiterbauelement |
| GB2007909B (en) * | 1977-11-04 | 1982-02-10 | Secr Defence | Method and apparatus for parallel-in to serial-out conversion |
| JPS5491196A (en) * | 1977-12-28 | 1979-07-19 | Toshiba Corp | Production of photoconductive array-shaped infrared detector |
| GB2019649B (en) * | 1978-04-25 | 1982-05-06 | Secr Defence | Imaging device and systems |
| JPS55158682A (en) * | 1979-05-29 | 1980-12-10 | Matsushita Electric Ind Co Ltd | Photoconductive cell and manufacture thereof |
-
1982
- 1982-03-25 FR FR8205109A patent/FR2502846B1/fr not_active Expired
- 1982-03-29 JP JP57050886A patent/JPS57175224A/ja active Granted
- 1982-03-30 DE DE3211769A patent/DE3211769C2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3211769A1 (de) | 1982-12-16 |
| FR2502846A1 (fr) | 1982-10-01 |
| JPS57175224A (en) | 1982-10-28 |
| DE3211769C2 (de) | 1996-05-09 |
| FR2502846B1 (fr) | 1986-08-01 |
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