JPS57175224A - Photoconductive detector - Google Patents

Photoconductive detector

Info

Publication number
JPS57175224A
JPS57175224A JP57050886A JP5088682A JPS57175224A JP S57175224 A JPS57175224 A JP S57175224A JP 57050886 A JP57050886 A JP 57050886A JP 5088682 A JP5088682 A JP 5088682A JP S57175224 A JPS57175224 A JP S57175224A
Authority
JP
Japan
Prior art keywords
photoconductive detector
photoconductive
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57050886A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059945B2 (enrdf_load_stackoverflow
Inventor
Ashiyurii Teimoshii
Tomasu Eriotsuto Chiyaaruzu
Ansonii Howaito Maikeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of JPS57175224A publication Critical patent/JPS57175224A/ja
Publication of JPH059945B2 publication Critical patent/JPH059945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP57050886A 1981-03-30 1982-03-29 Photoconductive detector Granted JPS57175224A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8109928 1981-03-30

Publications (2)

Publication Number Publication Date
JPS57175224A true JPS57175224A (en) 1982-10-28
JPH059945B2 JPH059945B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=10520772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050886A Granted JPS57175224A (en) 1981-03-30 1982-03-29 Photoconductive detector

Country Status (3)

Country Link
JP (1) JPS57175224A (enrdf_load_stackoverflow)
DE (1) DE3211769C2 (enrdf_load_stackoverflow)
FR (1) FR2502846B1 (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491196A (en) * 1977-12-28 1979-07-19 Toshiba Corp Production of photoconductive array-shaped infrared detector
JPS55158682A (en) * 1979-05-29 1980-12-10 Matsushita Electric Ind Co Ltd Photoconductive cell and manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1488258A (en) * 1974-11-27 1977-10-12 Secr Defence Thermal radiation imaging devices and systems
DE2702571C3 (de) * 1977-01-22 1982-02-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Kontaktstruktur für ein Vielfach- Halbleiterbauelement
GB2007909B (en) * 1977-11-04 1982-02-10 Secr Defence Method and apparatus for parallel-in to serial-out conversion
GB2019649B (en) * 1978-04-25 1982-05-06 Secr Defence Imaging device and systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491196A (en) * 1977-12-28 1979-07-19 Toshiba Corp Production of photoconductive array-shaped infrared detector
JPS55158682A (en) * 1979-05-29 1980-12-10 Matsushita Electric Ind Co Ltd Photoconductive cell and manufacture thereof

Also Published As

Publication number Publication date
JPH059945B2 (enrdf_load_stackoverflow) 1993-02-08
DE3211769C2 (de) 1996-05-09
FR2502846B1 (fr) 1986-08-01
DE3211769A1 (de) 1982-12-16
FR2502846A1 (fr) 1982-10-01

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