JPH0587978B2 - - Google Patents

Info

Publication number
JPH0587978B2
JPH0587978B2 JP2089290A JP8929090A JPH0587978B2 JP H0587978 B2 JPH0587978 B2 JP H0587978B2 JP 2089290 A JP2089290 A JP 2089290A JP 8929090 A JP8929090 A JP 8929090A JP H0587978 B2 JPH0587978 B2 JP H0587978B2
Authority
JP
Japan
Prior art keywords
polyimide
metallization
etching
substrate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2089290A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02302053A (ja
Inventor
Edowaado Kinderu Toomasu
Jooji Ritsukaaru Hooru
Jon Ratsuseru Deuido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH02302053A publication Critical patent/JPH02302053A/ja
Publication of JPH0587978B2 publication Critical patent/JPH0587978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Laminated Bodies (AREA)
JP2089290A 1989-04-26 1990-04-05 ポリイミド基板の選択的エツチング方法 Granted JPH02302053A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US343217 1989-04-26
US07/343,217 US4911786A (en) 1989-04-26 1989-04-26 Method of etching polyimides and resulting passivation structure

Publications (2)

Publication Number Publication Date
JPH02302053A JPH02302053A (ja) 1990-12-14
JPH0587978B2 true JPH0587978B2 (https=) 1993-12-20

Family

ID=23345176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2089290A Granted JPH02302053A (ja) 1989-04-26 1990-04-05 ポリイミド基板の選択的エツチング方法

Country Status (4)

Country Link
US (1) US4911786A (https=)
EP (1) EP0394638B1 (https=)
JP (1) JPH02302053A (https=)
DE (1) DE69031143T2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300402A (en) * 1988-12-30 1994-04-05 International Business Machines Corporation Composition for photo imaging
US6210862B1 (en) 1989-03-03 2001-04-03 International Business Machines Corporation Composition for photoimaging
US5217849A (en) * 1989-08-28 1993-06-08 Sumitomo Metal Mining Company Limited Process for making a two-layer film carrier
US5066360A (en) * 1990-09-24 1991-11-19 International Business Machines Corp. Pad printing of resist over via holes
US5227008A (en) * 1992-01-23 1993-07-13 Minnesota Mining And Manufacturing Company Method for making flexible circuits
US5334487A (en) * 1992-07-23 1994-08-02 International Business Machines Corporation Method for forming a patterned layer on a substrate
US5350487A (en) * 1993-05-03 1994-09-27 Ameen Thomas J Method of etching polyimide
US5960306A (en) * 1995-12-15 1999-09-28 Motorola, Inc. Process for forming a semiconductor device
US5993945A (en) * 1996-05-30 1999-11-30 International Business Machines Corporation Process for high resolution photoimageable dielectric
US5879572A (en) * 1996-11-19 1999-03-09 Delco Electronics Corporation Method of protecting silicon wafers during wet chemical etching
US6022670A (en) * 1997-05-08 2000-02-08 International Business Machines Corporation Process for high resolution photoimageable dielectric
US6680440B1 (en) 1998-02-23 2004-01-20 International Business Machines Corporation Circuitized structures produced by the methods of electroless plating
US6066889A (en) 1998-09-22 2000-05-23 International Business Machines Corporation Methods of selectively filling apertures
US6204456B1 (en) 1998-09-24 2001-03-20 International Business Machines Corporation Filling open through holes in a multilayer board
KR100411679B1 (ko) * 1999-03-16 2003-12-18 세이코 엡슨 가부시키가이샤 반도체 장치 및 그 제조 방법, 회로 기판 및 전자기기
US6177357B1 (en) * 1999-04-30 2001-01-23 3M Innovative Properties Company Method for making flexible circuits
DE19955969A1 (de) 1999-11-19 2001-05-31 Inst Mikrotechnik Mainz Gmbh Verwendung von Polyimid für Haftschichten und lithographisches Verfahren zur Herstellung von Mikrobauteilen
US6207350B1 (en) * 2000-01-18 2001-03-27 Headway Technologies, Inc. Corrosion inhibitor for NiCu for high performance writers
US9165821B2 (en) * 2013-12-23 2015-10-20 Infineon Technologies Ag Method for providing a self-aligned pad protection in a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833436A (en) * 1972-09-05 1974-09-03 Buckbee Mears Co Etching of polyimide films
US4426253A (en) * 1981-12-03 1984-01-17 E. I. Du Pont De Nemours & Co. High speed etching of polyimide film
JPS58108229A (ja) * 1981-12-21 1983-06-28 Hitachi Ltd ポリイミド系樹脂膜の選択エツチング方法
US4523976A (en) * 1984-07-02 1985-06-18 Motorola, Inc. Method for forming semiconductor devices
US4606998A (en) * 1985-04-30 1986-08-19 International Business Machines Corporation Barrierless high-temperature lift-off process

Also Published As

Publication number Publication date
DE69031143D1 (de) 1997-09-04
US4911786A (en) 1990-03-27
EP0394638B1 (en) 1997-07-30
EP0394638A2 (en) 1990-10-31
DE69031143T2 (de) 1998-02-12
JPH02302053A (ja) 1990-12-14
EP0394638A3 (en) 1992-07-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees