JPH0587829A - Manufacture of semiconductor acceleration sensor - Google Patents

Manufacture of semiconductor acceleration sensor

Info

Publication number
JPH0587829A
JPH0587829A JP27661191A JP27661191A JPH0587829A JP H0587829 A JPH0587829 A JP H0587829A JP 27661191 A JP27661191 A JP 27661191A JP 27661191 A JP27661191 A JP 27661191A JP H0587829 A JPH0587829 A JP H0587829A
Authority
JP
Japan
Prior art keywords
acceleration sensor
weight
pedestal
chip
glass plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27661191A
Other languages
Japanese (ja)
Inventor
Michihiro Mizuno
倫博 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP27661191A priority Critical patent/JPH0587829A/en
Publication of JPH0587829A publication Critical patent/JPH0587829A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To facilitate the assembly of a semiconductor acceleration sensor. CONSTITUTION:The material of a base 11 and a weight 10 is glass, and after both the members are joined at both the edge parts of a chip 4, cutting work is carried out, and the base 11 and the weight 10 can be installed on each wafer. Further, the weight is installed on the surface of the chip 4 by the same method. Accordingly, the assembly work for a semiconductor accelerating speed sensor is facilitated, and the axis sensitivity can be lightened.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体加速度センサ
の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor acceleration sensor.

【0002】[0002]

【従来の技術】図4は従来の加速度センサの断面図であ
る。図において、1はパッケージキャップ、2は加速度
を検知するゲージ抵抗、3はダイヤフラム、4はゲージ
抵抗2とダイヤフラム3を具備する加速度センサチッ
プ、5は感度を増加する重り、6は加速度センサチップ
4を支持する台座、7は外部リード、8は外部リード7
と加速度センサチップ4を電気的に接続するワイヤ、9
は台座6を固定し外部リード7を具備するステムであ
る。
2. Description of the Related Art FIG. 4 is a sectional view of a conventional acceleration sensor. In the figure, 1 is a package cap, 2 is a gauge resistor for detecting acceleration, 3 is a diaphragm, 4 is an acceleration sensor chip having a gauge resistor 2 and a diaphragm 3, 5 is a weight for increasing sensitivity, and 6 is an acceleration sensor chip 4. A pedestal for supporting, an external lead 7 and an external lead 7
A wire for electrically connecting the acceleration sensor chip 4 and the acceleration sensor chip 4, 9
Is a stem that fixes the pedestal 6 and is equipped with external leads 7.

【0003】次に組立動作について説明する。加速度セ
ンサチップ4は、シリコンウエハにゲージ抵抗2及びエ
ッチングによりダイヤフラム3を形成したものであり、
この加速度センサチップ4に台座6を接着し、外部リー
ド7を具備するステム9に接着する。次に加速度センサ
チップ4と外部リード7にワイヤ8をワイヤボンドす
る。そして加速度センサチップ4に重り5を接着し、最
後にパッケージキャップ1をステム9に溶接して取付け
る。
Next, the assembling operation will be described. The acceleration sensor chip 4 is a silicon wafer having a gauge resistor 2 and a diaphragm 3 formed by etching.
The pedestal 6 is bonded to the acceleration sensor chip 4, and the stem 9 having the external lead 7 is bonded thereto. Next, the wire 8 is wire-bonded to the acceleration sensor chip 4 and the external lead 7. Then, the weight 5 is adhered to the acceleration sensor chip 4, and finally the package cap 1 is attached to the stem 9 by welding.

【0004】[0004]

【発明が解決しようとする課題】従来の加速度センサは
以上のように構成されているので、アセンブリが複雑で
手間がかかるなどの問題点があった。
Since the conventional acceleration sensor is constructed as described above, there are problems in that the assembly is complicated and laborious.

【0005】この発明は上記のような問題点を解消する
ためになされたもので、アセンブリを容易にすることを
目的とする。
The present invention has been made to solve the above problems, and an object thereof is to facilitate assembly.

【0006】[0006]

【課題を解決するための手段】この発明に係る加速度セ
ンサの製造方法は、ウエハ毎にガラス板を陽極接合し、
そのガラス板の一部を切り取って台座と重りに加工した
ものである。
A method of manufacturing an acceleration sensor according to the present invention is characterized in that a glass plate is anodically bonded to each wafer,
A part of the glass plate is cut out and processed into a pedestal and a weight.

【0007】更に、同じ方法で重りをチップの表裏に付
けたものである。
Furthermore, weights are attached to the front and back of the chip by the same method.

【0008】[0008]

【作用】この発明における加速度センサの製造方法は、
ウエハ毎に台座と重りを設置することが可能なため、ア
センブリが容易になる。
The method of manufacturing the acceleration sensor according to the present invention comprises:
Since the pedestal and the weight can be set for each wafer, the assembly becomes easy.

【0009】またチップの表裏に重りを付けるため、他
軸感度が軽減できる。
Further, since the weight is attached to the front and back of the chip, the sensitivity of the other axis can be reduced.

【0010】[0010]

【実施例】以下、この発明の実施例を図について説明す
る。図1はこの発明の一実施例を示す加速度センサの断
面図であり、図2はその製造フローを示す断面図であ
る。図1において、10と11は、後述する図2の方法で、
加速度センサチップ4の両端部に一体に接合されたガラ
ス板でなる重りと台座である。なおその他は従来装置と
同一部分については同一符号を付して説明を省略する。
Embodiments of the present invention will be described below with reference to the drawings. 1 is a sectional view of an acceleration sensor showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a manufacturing flow thereof. In FIG. 1, 10 and 11 are the methods of FIG. 2 described later,
The weight and the pedestal are glass plates integrally bonded to both ends of the acceleration sensor chip 4. Other parts that are the same as those of the conventional device are designated by the same reference numerals and description thereof is omitted.

【0011】次に加速度センサチップの製造方法につい
て説明する。図2において、ゲージ抵抗2とダイヤフラ
ム3を形成したシリコンウエハがあり(図2a)、そのシリ
コンウエハの裏面に凹部12aを有するガラス板12(台座と
重りを兼ねた)を陽極接合する(図2b)。そして、そのガ
ラス板のA部分を切り取り、台座11と重り10にする(図2
c)。最後にB部分で切断し、加速度センサチップ4(台
座と重りが接合された)が形成される。
Next, a method of manufacturing the acceleration sensor chip will be described. In FIG. 2, there is a silicon wafer on which a gauge resistor 2 and a diaphragm 3 are formed (FIG. 2a), and a glass plate 12 (which also serves as a pedestal and a weight) having a recess 12a is anodically bonded to the back surface of the silicon wafer (FIG. 2b). ). Then, cut out part A of the glass plate to form a pedestal 11 and a weight 10 (Fig. 2
c). Finally, the portion B is cut to form the acceleration sensor chip 4 (the pedestal and the weight are joined).

【0012】また、図3はこの発明の他の実施例を示す
ものである。図3において、ゲージ抵抗2とダイヤフラ
ム3を形成したシリコンウエハがあり(図3a)、そのシリ
コンウエハ4の裏面にガラス板12(台座と重りを兼ねた)
を陽極接合し(図3b)、さらにシリコンウエハの表面にも
ガラス板12(重りを兼ねた)を陽極接合する(図3c)。そし
てそのガラス板12のCの部分を切り取り、台座11と重り
10を形成する。最後に図3dのD部分で切断し、台座11と
重り10が接合された加速度センサチップ4(チップの表
裏に重りが付いた)が得られる。
FIG. 3 shows another embodiment of the present invention. In FIG. 3, there is a silicon wafer on which a gauge resistor 2 and a diaphragm 3 are formed (FIG. 3a), and a glass plate 12 (which also serves as a pedestal and a weight) is provided on the back surface of the silicon wafer 4.
Is anodically bonded (FIG. 3b), and the glass plate 12 (also serving as a weight) is also anodically bonded to the surface of the silicon wafer (FIG. 3c). Then cut out the C part of the glass plate 12 and weigh it with the pedestal 11
Forming 10. Finally, the acceleration sensor chip 4 (the weight is attached to the front and back of the chip) in which the pedestal 11 and the weight 10 are joined is obtained by cutting at the portion D in FIG. 3d.

【0013】[0013]

【発明の効果】以上のように、この発明によれば、台座
と重りとしてガラスを使用したので、ウエハ毎に台座と
重りが設置でき、アセンブリが容易になる。
As described above, according to the present invention, since the glass is used as the pedestal and the weight, the pedestal and the weight can be set for each wafer, and the assembly is facilitated.

【0014】また、同じ方法でチップの表裏に重りをつ
けることにより、他軸感度が軽減できる。
Also, by attaching weights to the front and back of the chip in the same manner, the sensitivity of other axes can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例による加速度センサの断面
図である。
FIG. 1 is a sectional view of an acceleration sensor according to an embodiment of the present invention.

【図2】この発明の製造フローを示す断面図である。FIG. 2 is a cross-sectional view showing the manufacturing flow of the present invention.

【図3】この発明の他の実施例の製造フローを示す断面
図である。
FIG. 3 is a cross-sectional view showing the manufacturing flow of another embodiment of the present invention.

【図4】従来の加速度センサを示す断面図である。FIG. 4 is a sectional view showing a conventional acceleration sensor.

【符号の説明】[Explanation of symbols]

4 加速度センサチップ 10 重り 11 台座 12 ガラス板 4 Acceleration sensor chip 10 Weight 11 Pedestal 12 Glass plate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 加速度センサチップに台座及び重りを取
り付けてなる半導体加速度センサにおける加速度センサ
チップの製造方法において、加速度センサチップの裏面
にガラス板を接合するとともに、台座及び重りに該当す
る部分以外のガラス板を切り取ることにより、ガラス板
でなる台座と重り付き加速度センサチップを得ることを
特徴とする半導体加速度センサの製造方法。
1. A method of manufacturing an acceleration sensor chip in a semiconductor acceleration sensor in which a pedestal and a weight are attached to an acceleration sensor chip, wherein a glass plate is bonded to the back surface of the acceleration sensor chip, and a part other than the part corresponding to the pedestal and the weight is attached. A method for manufacturing a semiconductor acceleration sensor, characterized in that a pedestal made of a glass plate and an acceleration sensor chip with a weight are obtained by cutting the glass plate.
【請求項2】 加速度センサチップの表面にもガラス板
を接合し、その重りに該当する部分以外のガラス板を切
り取ることにより、チップの表裏にガラス板の重りを取
付けるようにしたことを特徴とする請求項1記載の半導
体加速度センサの製造方法。
2. A glass plate is joined to the surface of the acceleration sensor chip, and the glass plate other than the part corresponding to the weight is cut off so that the weights of the glass plate are attached to the front and back of the chip. The method for manufacturing a semiconductor acceleration sensor according to claim 1.
JP27661191A 1991-09-26 1991-09-26 Manufacture of semiconductor acceleration sensor Pending JPH0587829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27661191A JPH0587829A (en) 1991-09-26 1991-09-26 Manufacture of semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27661191A JPH0587829A (en) 1991-09-26 1991-09-26 Manufacture of semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
JPH0587829A true JPH0587829A (en) 1993-04-06

Family

ID=17571858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27661191A Pending JPH0587829A (en) 1991-09-26 1991-09-26 Manufacture of semiconductor acceleration sensor

Country Status (1)

Country Link
JP (1) JPH0587829A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02135784A (en) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp Semiconductor acceleration sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02135784A (en) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp Semiconductor acceleration sensor

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