JPH0587027B2 - - Google Patents

Info

Publication number
JPH0587027B2
JPH0587027B2 JP60144574A JP14457485A JPH0587027B2 JP H0587027 B2 JPH0587027 B2 JP H0587027B2 JP 60144574 A JP60144574 A JP 60144574A JP 14457485 A JP14457485 A JP 14457485A JP H0587027 B2 JPH0587027 B2 JP H0587027B2
Authority
JP
Japan
Prior art keywords
voltage
gate
drain
mos transistor
threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60144574A
Other languages
English (en)
Japanese (ja)
Other versions
JPS627150A (ja
Inventor
Hiroshi Ikeda
Koichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60144574A priority Critical patent/JPS627150A/ja
Publication of JPS627150A publication Critical patent/JPS627150A/ja
Publication of JPH0587027B2 publication Critical patent/JPH0587027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
JP60144574A 1985-07-03 1985-07-03 半導体装置における書込み、読出し方法 Granted JPS627150A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60144574A JPS627150A (ja) 1985-07-03 1985-07-03 半導体装置における書込み、読出し方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60144574A JPS627150A (ja) 1985-07-03 1985-07-03 半導体装置における書込み、読出し方法

Publications (2)

Publication Number Publication Date
JPS627150A JPS627150A (ja) 1987-01-14
JPH0587027B2 true JPH0587027B2 (enExample) 1993-12-15

Family

ID=15365345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60144574A Granted JPS627150A (ja) 1985-07-03 1985-07-03 半導体装置における書込み、読出し方法

Country Status (1)

Country Link
JP (1) JPS627150A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3808763B2 (ja) 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545635A (en) * 1977-06-15 1979-01-17 Fujitsu Ltd Semiconductor memory device
JPS55113359A (en) * 1979-02-22 1980-09-01 Fujitsu Ltd Semiconductor integrated circuit device
JPS5678156A (en) * 1979-11-30 1981-06-26 Fujitsu Ltd Charge pump semiconductor memory

Also Published As

Publication number Publication date
JPS627150A (ja) 1987-01-14

Similar Documents

Publication Publication Date Title
JP2848272B2 (ja) 半導体記憶装置
US6009023A (en) High performance DRAM structure employing multiple thickness gate oxide
EP0844671B1 (en) Semiconductor element and semiconductor memory device using the same
US7166509B2 (en) Write once read only memory with large work function floating gates
JPH05110114A (ja) 不揮発性半導体記憶素子
WO1996018194A2 (en) Semiconductor memory with non-volatile memory transistor
WO2003028111A1 (en) Nonvolatile semiconductor memory device and its manufacturing method
JPH0219980B2 (enExample)
JPH0669515A (ja) 半導体記憶装置
US4084108A (en) Integrated circuit device
JPH0586864B2 (enExample)
JP3175665B2 (ja) 不揮発性半導体記憶装置のデータ消去方法
JP2647101B2 (ja) 不揮発性半導体メモリ装置
JPH0621478A (ja) 薄膜半導体素子
JP2002043448A (ja) 集積回路とメモリセルのトラップチャージ層のチャージ方法
JPS6057673A (ja) Ｍｏｓ型半導体装置
JPH0587027B2 (enExample)
IE52954B1 (en) Control of a signal voltage for a semiconductor device
JP3251699B2 (ja) 不揮発性記憶装置
JPS6235559A (ja) 半導体記憶装置
JPS6241431B2 (enExample)
JPH0451072B2 (enExample)
JPS6335111B2 (enExample)
JPS61245577A (ja) 不揮発性半導体メモリ素子
JPS6344307B2 (enExample)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term