JPH058568B2 - - Google Patents

Info

Publication number
JPH058568B2
JPH058568B2 JP1874385A JP1874385A JPH058568B2 JP H058568 B2 JPH058568 B2 JP H058568B2 JP 1874385 A JP1874385 A JP 1874385A JP 1874385 A JP1874385 A JP 1874385A JP H058568 B2 JPH058568 B2 JP H058568B2
Authority
JP
Japan
Prior art keywords
layer
inp
temperature
diffraction grating
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1874385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61179525A (ja
Inventor
Tooru Nishibe
Masami Iwamoto
Junichi Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1874385A priority Critical patent/JPS61179525A/ja
Publication of JPS61179525A publication Critical patent/JPS61179525A/ja
Publication of JPH058568B2 publication Critical patent/JPH058568B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
JP1874385A 1985-02-04 1985-02-04 気相成長方法 Granted JPS61179525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1874385A JPS61179525A (ja) 1985-02-04 1985-02-04 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1874385A JPS61179525A (ja) 1985-02-04 1985-02-04 気相成長方法

Publications (2)

Publication Number Publication Date
JPS61179525A JPS61179525A (ja) 1986-08-12
JPH058568B2 true JPH058568B2 (enrdf_load_stackoverflow) 1993-02-02

Family

ID=11980134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1874385A Granted JPS61179525A (ja) 1985-02-04 1985-02-04 気相成長方法

Country Status (1)

Country Link
JP (1) JPS61179525A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3977920B2 (ja) * 1998-05-13 2007-09-19 富士通株式会社 半導体装置の製造方法
JP6031783B2 (ja) * 2012-03-12 2016-11-24 富士通株式会社 半導体装置の製造方法
JP2016219667A (ja) * 2015-05-22 2016-12-22 住友電気工業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61179525A (ja) 1986-08-12

Similar Documents

Publication Publication Date Title
US6358316B1 (en) Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure
EP0377281B1 (en) Method of growing epitaxial layers
JPH02283084A (ja) 半導体レーザの製造方法
JPH021387B2 (enrdf_load_stackoverflow)
EP0188147A1 (fr) Procédé de fabrication d'un laser à semiconducteur à ruban enterré
US5726078A (en) Buried-ridge laser device
US4355396A (en) Semiconductor laser diode and method of making the same
US4073676A (en) GaAs-GaAlAs semiconductor having a periodic corrugation at an interface
JPH058568B2 (enrdf_load_stackoverflow)
JPH021386B2 (enrdf_load_stackoverflow)
US4629532A (en) Method of growing InGaAsP on InP substrate with corrugation
EP0945939A2 (en) Semiconductor light-emitting device
EP0117051B1 (en) Growth of semiconductors
US4849373A (en) Growth of semi-insulating indium phosphide by liquid phase epitaxy
JPS62237722A (ja) 半導体表面上の表面構造保存方法
US4717443A (en) Mass transport of indium phosphide
JP3396323B2 (ja) 高抵抗化合物半導体層とその結晶成長法，及び該高抵抗化合物半導体層を用いた半導体装置
JPS5946113B2 (ja) 半導体レ−ザ素子およびその製造方法
JP2806951B2 (ja) ストライプ型半導体レーザの製造方法
JP2641540B2 (ja) エピタキシャル結晶層形成方法及びストライプ型半導体レーザの製造方法
CA1121492A (en) Channelled substrate double heterostructure lasers
KR100319759B1 (ko) 선택적 결정 성장법을 이용한 굴절률보상형 분산궤환형레이저다이오드의 제조 방법
CA1293179C (en) Interrupted liquid phase epitaxy process
GB2299707A (en) Method for producing a semiconductor device
JPS633484A (ja) 半導体レ−ザの製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term