JPH0582758A - Ｒｏｍ回路用プログラムセル構造 - Google Patents
Ｒｏｍ回路用プログラムセル構造Info
- Publication number
- JPH0582758A JPH0582758A JP8596791A JP8596791A JPH0582758A JP H0582758 A JPH0582758 A JP H0582758A JP 8596791 A JP8596791 A JP 8596791A JP 8596791 A JP8596791 A JP 8596791A JP H0582758 A JPH0582758 A JP H0582758A
- Authority
- JP
- Japan
- Prior art keywords
- region
- cell structure
- cell
- rom circuit
- program
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007943 implant Substances 0.000 claims abstract description 10
- 230000005669 field effect Effects 0.000 claims abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 230000006870 function Effects 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT19903A/90 | 1990-03-30 | ||
| IT19903A IT1239989B (it) | 1990-03-30 | 1990-03-30 | Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0582758A true JPH0582758A (ja) | 1993-04-02 |
Family
ID=11162207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8596791A Pending JPH0582758A (ja) | 1990-03-30 | 1991-03-27 | Ｒｏｍ回路用プログラムセル構造 |
Country Status (4)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291435A (en) * | 1993-01-07 | 1994-03-01 | Yu Shih Chiang | Read-only memory cell |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4268950A (en) * | 1978-06-05 | 1981-05-26 | Texas Instruments Incorporated | Post-metal ion implant programmable MOS read only memory |
| US4359817A (en) * | 1981-05-28 | 1982-11-23 | General Motors Corporation | Method for making late programmable read-only memory devices |
| JPS5830154A (ja) * | 1981-08-17 | 1983-02-22 | Toshiba Corp | 固定記憶半導体装置およびその製造方法 |
-
1990
- 1990-03-30 IT IT19903A patent/IT1239989B/it active IP Right Grant
-
1991
- 1991-03-19 EP EP91104217A patent/EP0450389B1/en not_active Expired - Lifetime
- 1991-03-19 DE DE69112882T patent/DE69112882T2/de not_active Expired - Fee Related
- 1991-03-27 JP JP8596791A patent/JPH0582758A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1239989B (it) | 1993-11-27 |
| EP0450389A2 (en) | 1991-10-09 |
| DE69112882D1 (de) | 1995-10-19 |
| IT9019903A0 (it) | 1990-03-30 |
| IT9019903A1 (it) | 1991-09-30 |
| EP0450389A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-02-23 |
| EP0450389B1 (en) | 1995-09-13 |
| DE69112882T2 (de) | 1996-02-15 |
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