JPH0580439B2 - - Google Patents

Info

Publication number
JPH0580439B2
JPH0580439B2 JP61307114A JP30711486A JPH0580439B2 JP H0580439 B2 JPH0580439 B2 JP H0580439B2 JP 61307114 A JP61307114 A JP 61307114A JP 30711486 A JP30711486 A JP 30711486A JP H0580439 B2 JPH0580439 B2 JP H0580439B2
Authority
JP
Japan
Prior art keywords
epitaxial growth
liquid phase
solution
phase epitaxial
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61307114A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63159289A (ja
Inventor
Tsunehiro Unno
Mineo Wajima
Hisafumi Tate
Taiichiro Konno
Hiroshi Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP30711486A priority Critical patent/JPS63159289A/ja
Publication of JPS63159289A publication Critical patent/JPS63159289A/ja
Publication of JPH0580439B2 publication Critical patent/JPH0580439B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP30711486A 1986-12-23 1986-12-23 液相エピタキシヤル成長方法及び成長装置 Granted JPS63159289A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30711486A JPS63159289A (ja) 1986-12-23 1986-12-23 液相エピタキシヤル成長方法及び成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30711486A JPS63159289A (ja) 1986-12-23 1986-12-23 液相エピタキシヤル成長方法及び成長装置

Publications (2)

Publication Number Publication Date
JPS63159289A JPS63159289A (ja) 1988-07-02
JPH0580439B2 true JPH0580439B2 (Direct) 1993-11-09

Family

ID=17965198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30711486A Granted JPS63159289A (ja) 1986-12-23 1986-12-23 液相エピタキシヤル成長方法及び成長装置

Country Status (1)

Country Link
JP (1) JPS63159289A (Direct)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW344100B (en) * 1996-05-31 1998-11-01 Toshiba Co Ltd Semiconductor liquid phase epitaxial growth method and apparatus
JP5200973B2 (ja) * 2009-02-04 2013-06-05 株式会社Ｉｈｉ 基板ホルダ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139970A (en) * 1977-05-13 1978-12-06 Sanyo Electric Co Ltd Liquid phase epitaxial growth method of gaas crystal
JPS59189621A (ja) * 1983-04-12 1984-10-27 Sharp Corp 液相エピタキシヤル成長装置

Also Published As

Publication number Publication date
JPS63159289A (ja) 1988-07-02

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Legal Events

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LAPS Cancellation because of no payment of annual fees