JPH0578171B2 - - Google Patents

Info

Publication number
JPH0578171B2
JPH0578171B2 JP58201096A JP20109683A JPH0578171B2 JP H0578171 B2 JPH0578171 B2 JP H0578171B2 JP 58201096 A JP58201096 A JP 58201096A JP 20109683 A JP20109683 A JP 20109683A JP H0578171 B2 JPH0578171 B2 JP H0578171B2
Authority
JP
Japan
Prior art keywords
electrode
columnar
etching
columnar electrode
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58201096A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6094724A (ja
Inventor
Tsutomu Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP20109683A priority Critical patent/JPS6094724A/ja
Publication of JPS6094724A publication Critical patent/JPS6094724A/ja
Publication of JPH0578171B2 publication Critical patent/JPH0578171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP20109683A 1983-10-28 1983-10-28 ドライエツチング装置 Granted JPS6094724A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20109683A JPS6094724A (ja) 1983-10-28 1983-10-28 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20109683A JPS6094724A (ja) 1983-10-28 1983-10-28 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS6094724A JPS6094724A (ja) 1985-05-27
JPH0578171B2 true JPH0578171B2 (OSRAM) 1993-10-28

Family

ID=16435325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20109683A Granted JPS6094724A (ja) 1983-10-28 1983-10-28 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS6094724A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
US5573596A (en) * 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
CN107130214A (zh) * 2017-05-11 2017-09-05 成都西沃克真空科技有限公司 一种蒸发器用可旋转的水冷式电极装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus

Also Published As

Publication number Publication date
JPS6094724A (ja) 1985-05-27

Similar Documents

Publication Publication Date Title
US6902683B1 (en) Plasma processing apparatus and plasma processing method
US6129806A (en) Plasma processing apparatus and plasma processing method
KR100274306B1 (ko) 에칭방법
US5593539A (en) Plasma source for etching
US5660744A (en) Plasma generating apparatus and surface processing apparatus
EP0563899B1 (en) Plasma generating method and plasma generating apparatus using said method
KR970005035B1 (ko) 플라즈마발생방법 및 그 장치
JP3499104B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP3311064B2 (ja) プラズマ生成装置、表面処理装置および表面処理方法
US5518547A (en) Method and apparatus for reducing particulates in a plasma tool through steady state flows
JPS6136589B2 (OSRAM)
JPH0578171B2 (OSRAM)
JPH04324631A (ja) 表面処理装置
JP2851765B2 (ja) プラズマ発生方法およびその装置
JP2003077904A (ja) プラズマ処理装置及びプラズマ処理方法
JPS6139521A (ja) プラズマ表面処理装置
JPH03177020A (ja) エッチング装置
JP2004349717A (ja) プラズマエッチング処理装置
KR970010266B1 (ko) 플라즈마 발생방법 및 그 장치
JPH0458685B2 (OSRAM)
JP2003077903A (ja) プラズマ処理装置及びプラズマ処理方法
JPH0457091B2 (OSRAM)
JP2929150B2 (ja) プラズマ装置
JPH0645094A (ja) プラズマ発生方法およびその装置
JPH0566724B2 (OSRAM)