JPH0576186B2 - - Google Patents
Info
- Publication number
- JPH0576186B2 JPH0576186B2 JP57084763A JP8476382A JPH0576186B2 JP H0576186 B2 JPH0576186 B2 JP H0576186B2 JP 57084763 A JP57084763 A JP 57084763A JP 8476382 A JP8476382 A JP 8476382A JP H0576186 B2 JPH0576186 B2 JP H0576186B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- forming
- insulating film
- impurity region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 33
- 239000011229 interlayer Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8476382A JPS58202550A (ja) | 1982-05-21 | 1982-05-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8476382A JPS58202550A (ja) | 1982-05-21 | 1982-05-21 | 半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12670990A Division JPH0316124A (ja) | 1990-05-18 | 1990-05-18 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58202550A JPS58202550A (ja) | 1983-11-25 |
| JPH0576186B2 true JPH0576186B2 (ko) | 1993-10-22 |
Family
ID=13839715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8476382A Granted JPS58202550A (ja) | 1982-05-21 | 1982-05-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58202550A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270256A (en) * | 1991-11-27 | 1993-12-14 | Intel Corporation | Method of forming a guard wall to reduce delamination effects |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129279A (en) * | 1976-04-22 | 1977-10-29 | Fujitsu Ltd | Production of semiconductor device |
-
1982
- 1982-05-21 JP JP8476382A patent/JPS58202550A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129279A (en) * | 1976-04-22 | 1977-10-29 | Fujitsu Ltd | Production of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58202550A (ja) | 1983-11-25 |
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