JPH0574829B2 - - Google Patents
Info
- Publication number
- JPH0574829B2 JPH0574829B2 JP60015006A JP1500685A JPH0574829B2 JP H0574829 B2 JPH0574829 B2 JP H0574829B2 JP 60015006 A JP60015006 A JP 60015006A JP 1500685 A JP1500685 A JP 1500685A JP H0574829 B2 JPH0574829 B2 JP H0574829B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- sci
- phosphorus
- nonlinear resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、液晶と液晶駆動用電極の名画素ご
とに、液晶と直列にリンをドープしたシリコン酸
化膜、シリコンチツ化膜を非線形抵抗素子として
形成した液晶表示装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] This invention uses a phosphorus-doped silicon oxide film or silicon nitride film as a nonlinear resistance element in series with the liquid crystal for each pixel of the liquid crystal and the liquid crystal driving electrode. The present invention relates to a formed liquid crystal display device.
この発明は、液晶と液晶駆動用電極の各画素ご
とに液晶と直列に非線形抵抗素子を接続したドツ
トマトリクス液晶表示装置において、リンをドー
プしたシリコン酸化膜、またはリンをドープした
シリコン窒化膜、またはリンをドープしたシリコ
ン酸化窒化膜であり、かつ原子組成比Ｏ／Si＝
ｘ、Ｎ／Si＝ｙがそれぞれ0.1≦ｘ≦1.9、0.1≦ｙ
≦1.3である膜を非線形抵抗膜として用いること
により、駆動電圧を低下させ、表示むら、クロス
トークを減少させ、画素欠陥発生率を減少させ、
製造歩留りを向上させるようにしたものである。
The present invention provides a dot matrix liquid crystal display device in which a nonlinear resistance element is connected in series with the liquid crystal for each pixel of the liquid crystal and the liquid crystal driving electrode, using a silicon oxide film doped with phosphorus, a silicon nitride film doped with phosphorus, or a silicon nitride film doped with phosphorus. It is a silicon oxynitride film doped with phosphorus, and the atomic composition ratio O/Si=
x, N/Si=y are 0.1≦x≦1.9, 0.1≦y, respectively
By using a film with ≦1.3 as a nonlinear resistance film, the driving voltage can be lowered, display unevenness and crosstalk can be reduced, and the pixel defect rate can be reduced.
This is intended to improve manufacturing yield.
小型、軽量、低消費電力の表示装置として液晶
表示装置が実用化されてきた。近年この種の表示
装置の表示情報量増大化を計る目的で、SnOバリ
スターや金属−絶縁膜−金属構造からなるMIM
型非線形抵抗素子によう液晶表示装置が研究され
てきた。本発明は上記従来例とは異なり、非線形
素子として、導体−半導電性絶縁膜（以後SCI…
…Semi Conductive Insulatorと記す）−導体か
らなる新規液晶表示装置である。
Liquid crystal display devices have been put into practical use as small, lightweight, and low power consumption display devices. In recent years, with the aim of increasing the amount of information displayed on this type of display device, MIMs consisting of SnO varistors and metal-insulating film-metal structures have been developed.
Liquid crystal display devices using nonlinear resistive elements have been studied. Unlike the conventional example described above, the present invention uses a conductor-semiconductor insulating film (hereinafter referred to as SCI) as a nonlinear element.
...Semi Conductive Insulator) - A new liquid crystal display device made of a conductor.
第２図は非線形抵抗素子を用いた従来から知ら
れた液晶ドツトマトリクス表示パネルのＸ−Ｙマ
トリクスパネル回路図である。第２図の２１は行
電極群、２２は列電極群であり、通常おのおの
200本から1000本形成する。Ｘ電極とＹ電極の交
互点には、液晶２３と非線形抵抗素子２４が形成
される。この種の液晶駆動はマルチプレツクス駆
動とよばれる方式で行なわれる。第３図はSCI膜
を使つたこの種の液晶表示装置の縦断面図を示
し、導体−SCI−導体構造からなる非線抵抗膜を
使つた〓画素について示す。第３図の３１，３２
はぞれぞれ上下透明基板、３３は液晶層、３４は
透明導電膜、でありＸ電極群、３７はメタル電極
でありＹ電極群を形成し、３６は非線形抵抗膜
SCI、３５は透明導電明である。第４図は従来の
〓画素の等価回路図であり、CLC……液晶の容量、
RLC……液晶の抵抗、CI……非線形抵抗膜の容量、
RI……非線形抵抗膜の抵抗をそれぞれ示し、抵
抗RIは電圧に対して非線形性を有する。この種
のパネルは通常1/2〜1/5バイアス駆動法とよばれ
る方法で駆動するが、このとき、上記液晶の抵抗
RLC、液晶の容量CLC、非線形抵抗素子RI、非線形
抵抗素子の容量CIに制約条件が発生する。すなわ
ち、CLC／CI比は２以上のできるだけ大きいこと、
第４図のAB間に印加される電圧VOPに対して、
およそRLC／100＜RI（VOP）＜100RLCであること、
RIは電圧に対してできるだけ急峻に変化するこ
と、駆動電圧を低下させるためにはRIは低電圧
で急峻に変化することである。また第３図のメタ
ル電極３７と画素電極３５の重り部分にSCI膜３
６が存在するが、この部分でのシヨート、メタル
電極３７のエツジ断差部のブレークダウンが発生
しやすく、製造コストが高くなつた。
FIG. 2 is an X-Y matrix panel circuit diagram of a conventionally known liquid crystal dot matrix display panel using nonlinear resistance elements. In Figure 2, 21 is a row electrode group, 22 is a column electrode group, and usually each
Form 200 to 1000 lines. A liquid crystal 23 and a nonlinear resistance element 24 are formed at alternate points of the X electrode and the Y electrode. This type of liquid crystal driving is performed by a method called multiplex driving. FIG. 3 shows a vertical cross-sectional view of this type of liquid crystal display device using an SCI film, and shows a pixel using a non-linear resistance film having a conductor-SCI-conductor structure. 31, 32 in Figure 3
These are upper and lower transparent substrates, 33 is a liquid crystal layer, 34 is a transparent conductive film, which is an X electrode group, 37 is a metal electrode, which forms a Y electrode group, and 36 is a nonlinear resistance film.
SCI, 35 is a transparent conductive material. Figure 4 is an equivalent circuit diagram of a conventional pixel, where C LC ... liquid crystal capacitance,
R LC ...Resistance of liquid crystal, C I ...Capacitance of nonlinear resistive film,
R I ...indicates the resistance of a nonlinear resistance film, and the resistance R I has nonlinearity with respect to voltage. This type of panel is usually driven using a method called 1/2 to 1/5 bias driving method, but at this time, the resistance of the liquid crystal
Constraint conditions occur on R LC , the capacitance C LC of the liquid crystal, the nonlinear resistance element R I , and the capacitance C I of the nonlinear resistance element. That is, the C LC /C I ratio should be as large as possible, greater than or equal to 2;
For the voltage V OP applied between AB in Fig. 4,
Approximately R LC /100<R I (V OP )<100R LC ;
R I should change as steeply as possible with respect to voltage, and in order to lower the drive voltage, R I should change steeply at a low voltage. Also, the SCI film 3 is attached to the weight part of the metal electrode 37 and the pixel electrode 35 in FIG.
However, breakdown of the shot and the edge difference portion of the metal electrode 37 is likely to occur in this portion, resulting in an increase in manufacturing cost.
本発明は、非線形抵抗膜であるSCI膜として、
リンをドープしたシリコン酸化膜またはシリコン
チツ化膜を用いることにより、抵抗値が、リンを
ドープしないSCI膜に対して２ケタ以下の抵抗値
でありしかも非線形性が大きいSCI膜を作成し
た。
The present invention uses an SCI film which is a non-linear resistance film.
By using a phosphorus-doped silicon oxide film or a silicon nitride film, we have created an SCI film that has a resistance value that is less than two digits compared to an SCI film that is not doped with phosphorus, and has high nonlinearity.
前述のごとく、本発明はリンドープのSCI膜使
用により、重なり部分のSCI膜厚が、1000Åから
1μｍの厚さで形成することにより、容量CIが従来
の1/10以下とすることができる。そのために、駆
動電圧VOPを低下させることができると同時に、
１画素の表示状態が、他の画素の表示状態からの
影響を無くすることができる。さらに、SCI膜の
膜厚が厚いためにダストによるシヨート、電極エ
ツジ部のブレークダウンを減少させることができ
る。
As mentioned above, the present invention uses a phosphorus-doped SCI film to increase the SCI film thickness in the overlapping area from 1000 Å.
By forming it with a thickness of 1 μm, the capacitance C I can be reduced to 1/10 or less of the conventional value. Therefore, the drive voltage V OP can be lowered, and at the same time
The display state of one pixel can be unaffected by the display states of other pixels. Furthermore, since the SCI film is thick, it is possible to reduce shoots caused by dust and breakdown of electrode edges.
次に本発明による液晶表示装置について、実施
例にもとづいて詳細に説明する。第１図ａは本発
明によるリンドープSCI膜を用いた液晶表示装置
の下側基板の斜視図である。基板１はガラス、電
極２は、金属クロム電極であり、スパツターによ
つて膜厚約1000Åをパターニングし、電極巾約
50μｍで500本形成しＸ電極群とした。第１図ａ
の３は、MSI膜であり、プラズマCVD法により、
シランガスとホスフインガスと亜酸化窒素ガスに
よつて、基板温度300℃で約0.5μｍの厚さに形成
した。第１図ａの４は画素透明電極であり、スパ
ツターによつてインジウムスズ酸化膜（ITO）を
約500Å形成し、次にパターニングを行つて、
500μｍ×800μｍの画素電極を形成した。第１図
ａでは省略したが、この上に液晶層、Ｙ電極を形
成した上側基板が構成される。第１図ａの部分５
に非線形抵抗素子が形成されており、構造は、金
属電極Cv−SCI膜−透明導電電極構造である。第
１図ｂは、第１図ａの５のSCI膜を使つた非線形
抵抗素子の抵抗対電圧特性を示すグラフであり、
第１図ｂのグラフＡが、リンをドープした本発明
によるSCI膜の特性、グラフＢがリンをドープし
ない通常のSCI膜、膜厚1000Åの抵抗対電圧特性
である。SCI膜のリンのドープ量は、プラズマ
CVDにおけるシランガスとホスフインガスの流
量比で決定され、本発明においては流量比0.1％
〜１％で作成した。第１図ｂより明らかに、リン
をドープしたSCI膜はドープしないSCI膜よりも
抵抗値が下り、非線形性が向上していることがわ
かる。第１図ｃは本発明によるSCI膜の電流対電
圧特性を示すグラフであり、第１図ｃのグラフＡ
がリンをドープしたSCI膜、グラフＢがドープし
ないSCI膜である。非線形抵抗素子を用いた液晶
表示装置において、液晶層に対して直流電圧が印
加されると液晶と電極間で電気化学的な反応が起
き、急速に液晶が劣化し寿命を短くする。これを
防止するために、非線形抵抗素子は印加電圧の極
性に対して対称な電流電圧特性が必要である。本
発明のリンをドープしたSCI膜は、リンをドープ
しない場合でも同様であるが、Cv−SCI−ITOの
非対称な構造であるにもかかわらず、電気的な特
性はすぐれた対称性を有する。このことは、SCI
膜の非線形性はシヨツトキー電流ではないことが
理解できる。第１図ｂ，ｃより、SCI膜の抵抗値
が、リンをドープすることにより低下し、さらに
非線形性が向上する。そのために、基本的に電荷
注入容量保持動作である本方式表示装置において
は非線形素子の抵抗値が低下することは液晶パネ
ル駆動の電圧を下げることを意味する。第１図ａ
の構造で、リンをドープしたSIC膜を用いて下側
Ｘ電極群と上側Ｙ電極群をそれぞれ500ライン形
成し、駆動電圧10〜15ボルト、1/3バイアス電圧
平均化法によるマルチプレツクス駆動を行つたと
ころ、コントラスト比10：１以上、クロストー
ク、表示状態によつて影響をうけやすい表示むら
が全くない良好な表示状態を示した。また非線形
抵抗素子のシヨート、およびブレークダウンによ
る画素欠陥発生率は従来の1/10以下に減少した。
Next, a liquid crystal display device according to the present invention will be described in detail based on examples. FIG. 1a is a perspective view of a lower substrate of a liquid crystal display device using a phosphorus-doped SCI film according to the present invention. The substrate 1 is glass, and the electrode 2 is a metal chromium electrode, which is patterned to a thickness of about 1000 Å by sputtering, and the electrode width is about 1000 Å.
500 electrodes with a thickness of 50 μm were formed to form an X electrode group. Figure 1a
3 is an MSI film, which is made by plasma CVD method.
It was formed to a thickness of approximately 0.5 μm at a substrate temperature of 300° C. using silane gas, phosphine gas, and nitrous oxide gas. 4 in FIG. 1A is a pixel transparent electrode, and an indium tin oxide (ITO) film of about 500 Å is formed by sputtering, and then patterned.
A pixel electrode of 500 μm×800 μm was formed. Although omitted in FIG. 1a, an upper substrate is constructed on which a liquid crystal layer and a Y electrode are formed. Part 5 of Figure 1a
A nonlinear resistance element is formed in the structure, and the structure is a metal electrode Cv-SCI film-transparent conductive electrode structure. FIG. 1b is a graph showing the resistance versus voltage characteristics of the nonlinear resistance element using the SCI film No. 5 in FIG. 1a,
Graph A in FIG. 1b shows the characteristics of the SCI film according to the present invention doped with phosphorus, and graph B shows the resistance versus voltage characteristics of an ordinary SCI film not doped with phosphorus, with a film thickness of 1000 Å. The amount of phosphorus doped in the SCI film is
It is determined by the flow rate ratio of silane gas and phosphine gas in CVD, and in the present invention, the flow rate ratio is 0.1%.
-1%. It is clearly seen from FIG. 1b that the phosphorous-doped SCI film has a lower resistance value and improved nonlinearity than the undoped SCI film. FIG. 1c is a graph showing the current versus voltage characteristics of the SCI film according to the present invention, and graph A in FIG.
Graph B is an SCI film doped with phosphorus, and graph B is an undoped SCI film. In a liquid crystal display device using a nonlinear resistance element, when a DC voltage is applied to the liquid crystal layer, an electrochemical reaction occurs between the liquid crystal and the electrodes, rapidly deteriorating the liquid crystal and shortening its life. To prevent this, the nonlinear resistance element needs to have current-voltage characteristics that are symmetrical with respect to the polarity of the applied voltage. The SCI film doped with phosphorus of the present invention has excellent symmetry in electrical properties, even when not doped with phosphorus, despite the asymmetric structure of Cv-SCI-ITO. This means that SCI
It can be understood that the nonlinearity of the membrane is not a Schottky current. From FIGS. 1b and 1c, the resistance value of the SCI film is lowered by doping with phosphorus, and the nonlinearity is further improved. For this reason, in the display device of this type, which basically operates in a charge injection capacitor holding operation, a decrease in the resistance value of the nonlinear element means a decrease in the voltage for driving the liquid crystal panel. Figure 1a
In this structure, 500 lines each of the lower X electrode group and the upper Y electrode group are formed using a phosphorus-doped SIC film, and multiplex drive is performed using a driving voltage of 10 to 15 volts and a 1/3 bias voltage averaging method. When tested, the display showed a good display condition with a contrast ratio of 10:1 or more, no crosstalk, and no display unevenness that is susceptible to display conditions. In addition, the incidence of pixel defects due to shot and breakdown of nonlinear resistance elements has been reduced to less than 1/10 of the conventional rate.
なお、本発明によるSCI膜は、第１図ｄで示し
たように、表示画面全面に設けている。これは
SCI膜が透明の場合である。本発明者の実験結果
によれば、酸化膜の場合はシランガスと亜酸化窒
素ガスの流量比を変えて、SIC膜中のシリコンと
酸素の原子組成比Ｏ／Si＝ｘを0.5以上、窒化膜
の場合は、シランガスとアンモニアガスまたは窒
素ガスの流量比を変え、SCI膜中のシリコンと窒
素の原子組成比Ｎ／Si＝ｙを0.6以上とすること
により、SCI膜の光学的バンドギヤツプが2.5eV
以上となり、可視光領域において透明となる。ｘ
＜0.5、ｙ＜0.6の場合は、第１図ａの非線形抵抗
素子部５のみSCIを残し、他の画素部はフオトエ
ツチングによつて画素電極４を形成する前に選択
エツチを行つて除去すれば良い。シリコン酸化チ
ツ化膜の場合も同様である。 Note that the SCI film according to the present invention is provided over the entire display screen, as shown in FIG. 1d. this is
This is the case when the SCI film is transparent. According to the experimental results of the present inventor, in the case of an oxide film, by changing the flow rate ratio of silane gas and nitrous oxide gas, the atomic composition ratio O/Si = x of silicon and oxygen in the SIC film was increased to 0.5 or more, and the nitride film was In this case, the optical bandgap of the SCI film can be increased to 2.5 eV by changing the flow rate ratio of silane gas and ammonia gas or nitrogen gas and setting the atomic composition ratio N/Si = y of silicon and nitrogen in the SCI film to 0.6 or more.
As a result, it becomes transparent in the visible light region. x
<0.5, y<0.6, leave the SCI only in the nonlinear resistance element part 5 in FIG. Good. The same applies to the silicon oxide film.
またプラズマCVD法によつて作成した本発明
によるリンドープSCI膜中には、波数2100cm-1ふ
きんに赤外吸収ピーグがみられ、膜中にSi−Ｈボ
ンドが存在し、濃度は約1022／cm-3混入してい
る。 Furthermore, in the phosphorus-doped SCI film of the present invention prepared by plasma CVD, infrared absorption peaks are observed at a wave number of 2100 cm -1 , and Si-H bonds exist in the film, with a concentration of approximately 10 22 / Contains cm -3 .
本発明の実施例においてSCI膜作成法をプラズ
マCVD法によつて行つたが、これを同様のガス
を用いて、CVD法、スパツター法、光CVD法に
よつて製膜することができる。 In the examples of the present invention, the SCI film was formed by the plasma CVD method, but the same gas can be used to form the SCI film by the CVD method, the sputtering method, or the photo-CVD method.
以上述べてきたように本発明によるリンをドー
プしたシリコン酸化膜またはシリコン窒化膜、シ
リコン酸化窒化膜は、膜厚0.5μｍで従来以下の抵
抗値を示し、しかも非線形係数が大きく、そのた
めにCLC／CI比を従来の５倍以上とることができ、
その結果駆動電圧が低下し、クロストーク、表示
むらが減少し、さらに、SCI膜厚が0.5μｍと厚い
ために非線形抵抗素子部のシヨートが減少し製造
歩留りが向上し、製造コストが大巾に低下すると
いうすぐれた効果を有する。
As described above, the phosphorus-doped silicon oxide film, silicon nitride film, or silicon oxynitride film according to the present invention exhibits a resistance value lower than that of the conventional film at a film thickness of 0.5 μm, and also has a large nonlinear coefficient, which makes C LC /C I ratio can be more than 5 times that of the conventional one,
As a result, drive voltage is lowered, crosstalk and display unevenness are reduced, and since the SCI film is as thick as 0.5 μm, shorts in the nonlinear resistance element are reduced, improving manufacturing yield and significantly reducing manufacturing costs. It has the excellent effect of reducing
第１図ａは本発明による液晶表示装置の一実施
例であり、下側基板の電極構造を示す斜視図、第
１図ｂは、本発明による液晶表示装置の、リンを
ドープしたSCI膜とドープしないSCI膜の抵抗対
電圧特性を示すグラフ、第１図ｃは本発明による
液晶表示装置の、リンをドープしたSCI膜とドー
プしないSCI膜の電流対電圧特性を示すグラフ、
第２図は従来から知られた非線形抵抗素子を用い
た液晶ドツトマトリクスパネルの回路図、第３図
は非線形抵抗素子としてSCI膜を用いた液晶パネ
ルの縦断面図、第４図は従来の非線抵抗素子を用
いたときの〓画素の等価回路図をそれぞれ示す。
下側基板……１，３２、上側基板……３１、電
極……２，３７、画素電極……４，３５、上側透
明電極……３４、液晶……３３、SCI膜……３，
３６。
FIG. 1a shows an embodiment of the liquid crystal display device according to the present invention, and FIG. 1b is a perspective view showing the electrode structure of the lower substrate. FIG. 1c is a graph showing the resistance versus voltage characteristics of an undoped SCI film, and FIG.
Figure 2 is a circuit diagram of a liquid crystal dot matrix panel using a conventionally known nonlinear resistance element, Figure 3 is a longitudinal cross-sectional view of a liquid crystal panel using an SCI film as a nonlinear resistance element, and Figure 4 is a conventional nonlinear resistance element. An equivalent circuit diagram of each pixel when using a line resistance element is shown. Lower substrate...1,32, Upper substrate...31, Electrode...2,37, Pixel electrode...4,35, Upper transparent electrode...34, Liquid crystal...33, SCI film...3,
36.
Claims (1)
液晶層、液晶駆動用電極、少なくとも一方の基板
の各画素の液晶と液晶駆動用電極間に設けた非線
形抵抗膜などからなる液晶表示装置において、前
記非線形抵抗膜を構成する原子は、少くなくとも
シリコン、酸素、リンからなるシリコン酸化膜で
あり、前記シリコンと酸素の原子組成比Ｏ／Si＝
ｘは、0.1≦ｘ≦1.9であることを特徴とする液晶
表示装置。 ２ 非線形抵抗膜を構成する原子は、すくなくと
もシリコン、チツ素、リンからなるシリコンチツ
化膜であり、前記シリコンとチツ素の原子組成比
Ｎ／Si＝ｙは、0.1≦ｙ≦1.3であることを特徴と
する特許請求範囲第１項記載の液晶表示装置。 ３ 非線形抵抗膜を構成する原子は、すくなくと
も、シリコン、酸素、チツ素、リンからなるシリ
コン酸化チツ化膜であることを特徴とする特許請
求範囲第１項記載の液晶表示装置。 ４ 非線形抵抗膜は、すくなくとも水素を含有す
ることを特徴とする特許請求範囲第１項から第３
項までのいずれか記載の液晶表示装置。[Scope of Claims] 1. Two opposing substrates, a liquid crystal layer sandwiched between the substrates, a liquid crystal driving electrode, and a nonlinear resistance film provided between the liquid crystal of each pixel of at least one substrate and the liquid crystal driving electrode. In the liquid crystal display device, the atoms constituting the nonlinear resistance film are a silicon oxide film consisting of at least silicon, oxygen, and phosphorus, and the atomic composition ratio of silicon and oxygen is O/Si=
A liquid crystal display device, wherein x satisfies 0.1≦x≦1.9. 2. The atoms constituting the nonlinear resistance film are at least silicon, nitrogen, and phosphorus, and the atomic composition ratio N/Si=y is 0.1≦y≦1.3. A liquid crystal display device according to claim 1. 3. The liquid crystal display device according to claim 1, wherein the atoms constituting the nonlinear resistance film are at least a silicon oxide film made of silicon, oxygen, nitrogen, and phosphorus. 4. Claims 1 to 3, characterized in that the nonlinear resistance film contains at least hydrogen.
A liquid crystal display device according to any of the preceding paragraphs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015006A JPS61174590A (en) | 1985-01-29 | 1985-01-29 | Liquid crystal display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015006A JPS61174590A (en) | 1985-01-29 | 1985-01-29 | Liquid crystal display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61174590A JPS61174590A (en) | 1986-08-06 |
| JPH0574829B2 true JPH0574829B2 (en) | 1993-10-19 |
Family
ID=11876803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60015006A Granted JPS61174590A (en) | 1985-01-29 | 1985-01-29 | Liquid crystal display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174590A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562689B1 (en) * | 2000-04-14 | 2003-05-13 | Micron Technology, Inc. | Non-ion-implanted resistive silicon oxynitride films as resistors |
-
1985
- 1985-01-29 JP JP60015006A patent/JPS61174590A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61174590A (en) | 1986-08-06 |
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