JPH0513288B2 - - Google Patents
Info
- Publication number
- JPH0513288B2 JPH0513288B2 JP59211669A JP21166984A JPH0513288B2 JP H0513288 B2 JPH0513288 B2 JP H0513288B2 JP 59211669 A JP59211669 A JP 59211669A JP 21166984 A JP21166984 A JP 21166984A JP H0513288 B2 JPH0513288 B2 JP H0513288B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- nonlinear
- electrode
- nonlinear resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は液晶と液晶駆動用電極間に、液晶と
直列に非線形抵抗素子を接続したドツトマトリク
ス液晶表示装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a dot matrix liquid crystal display device in which a nonlinear resistance element is connected in series with the liquid crystal between the liquid crystal and the electrode for driving the liquid crystal.
（従来技術）
従来から、小型、軽量、低消費電力の表示装置
として液晶表示装置が実用化されてきた。近年こ
の液晶表示装置の表示情報量増大化を計る目的で
シリコン単結晶基板を用いたMOS型アクテイブ
液晶表示装置、ガラス基板上に半導体層を形成し
たTFT液晶表示装置、金属−絶縁膜−金属から
なる非線形抵抗素子を用いたMIM型液晶表示装
置などが知られている。MOS型液晶表示装置は
基板にシリコン単結晶を用いるため、大型化がで
きない。またTFTを用いた薄膜トランジスタに
よる液晶表示装置は、大型化の可能性はあるが、
５層以上の薄膜の形成、パターニングが必要であ
り、画素欠陥率が高く、コスト高になる欠点があ
る。これに対してMIM型の場合は、構造が比較
的簡単であり、大型化の可能性を秘めた表示装置
である。第２図は従来から知られた金属−絶縁膜
−金属による非線形抵抗素子を液晶と直列に接続
したＸ−Ｙマトリクス駆動のときの表示パネルの
回路図である。２１は行電極群、２２は列電極群
であり、通常2000本から1000本形成する。各Ｘ−
Ｙの交さ点には、病晶２３と非線形抵抗素子２４
が直列に接続されている。この種の表示装置の駆
動方法は、マルチプレツクス駆動方式とよばれる
方法で行われる。この駆動方法によれば、表示す
べく画素に印加される電圧をVS、表示しない非
選択点に印加される電圧をVNSとすると駆動マー
ジンは(1)式であらわせる。(Prior Art) Liquid crystal display devices have been put to practical use as small, lightweight, and low power consumption display devices. In recent years, with the aim of increasing the amount of information displayed on liquid crystal display devices, we have developed MOS type active liquid crystal display devices using a silicon single crystal substrate, TFT liquid crystal display devices with a semiconductor layer formed on a glass substrate, and metal-insulating film-metal display devices. MIM type liquid crystal display devices using nonlinear resistance elements are known. Since MOS type liquid crystal display devices use silicon single crystal for the substrate, they cannot be made larger. Additionally, liquid crystal display devices using thin film transistors using TFTs have the potential to become larger;
This method requires the formation and patterning of five or more layers of thin films, has the drawbacks of high pixel defect rate, and high cost. On the other hand, the MIM type display device has a relatively simple structure and has the potential to be made larger. FIG. 2 is a circuit diagram of a display panel driven in an X-Y matrix in which a conventionally known metal-insulating film-metal nonlinear resistance element is connected in series with a liquid crystal. 21 is a group of row electrodes, and 22 is a group of column electrodes, of which 2,000 to 1,000 electrodes are usually formed. Each X-
At the intersection point of Y, a diseased crystal 23 and a nonlinear resistance element 24 are placed.
are connected in series. This type of display device is driven by a method called a multiplex drive method. According to this driving method, when the voltage applied to the pixel for display is V S and the voltage applied to the non-selected point not to be displayed is V NS , the drive margin is expressed by equation (1).
したがつて、表示画素数を多くとるために分割数
ｎを増加させるにしたがい駆動マージンは１に近
づき、液晶の表示点燈電圧VSと表示消去電圧VNS
が接近する。そのために液晶はできるだけ急峻に
立ち上る必要がある。しかし現在の液晶の立ち上
り特性Vsat／Vthはおよそ1.3程度であり、最適
バイアス化を行つたとしても分割数ｎは約100程
度である。そこで、この液晶の立ち上り特性を改
善するために、液晶と直列に非線形抵抗素子を接
続する。第３図は従来装置につかわれている液晶
の印加電圧対透過率特性を示し、グラフ２５がツ
イストネマテイツク液晶の通常の特性、これに対
し、金属−絶縁膜−金属の非線型素子を液晶と直
列に接続したときの特性がグラフ２６である。液
晶の立ち上りが急峻になり、スレツシヨルド電圧
VTHが高電圧側へシフトする。その結果VS／VNS
を１に近づけることができ分割数を大きくとるこ
とができる。第４図は従来から知られている非線
形抵抗素子を用いた表示装置であり、２７，２８
は上下透明基板、２９は液晶、３０は金属タンタ
ル、３１は金属タンタルを陽極酸化して形成した
五酸化タンタル（Ta2O5）からなる絶縁膜、３２
は画素表示用電極である。この非線形抵抗素子
は、薄い絶縁膜内を流れるポールフレンケル電流
あるいはフアーラー、ノードハイムトンネル電流
といわれており、電界に対して非線形電流が流れ
ることを利用する。したがつて絶縁膜厚は、50〜
400Åと極めて薄くする必要がある。非線形抵抗
素子と液晶は直列接線であり、選択点を表示する
ときは非線形抵抗素子を通して電荷が液晶層に注
入されて表示を行い、非選択のときは、非線形抵
抗素子は電荷が流れにくいために表示しない。 Therefore, as the number of divisions n increases in order to increase the number of display pixels, the drive margin approaches 1, and the display lighting voltage V S and display erase voltage V NS of the liquid crystal decrease.
approaches. To achieve this, the liquid crystal needs to rise as steeply as possible. However, the rise characteristic Vsat/Vth of current liquid crystals is approximately 1.3, and even if optimal biasing is performed, the number of divisions n is approximately 100. Therefore, in order to improve the rise characteristics of this liquid crystal, a nonlinear resistance element is connected in series with the liquid crystal. Figure 3 shows the applied voltage vs. transmittance characteristics of liquid crystals used in conventional devices. Graph 26 shows the characteristics when connected in series. The rise of the liquid crystal becomes steep, and the threshold voltage
V TH shifts to higher voltage side. As a result, V S /V NS
can be made close to 1, and the number of divisions can be increased. FIG. 4 shows a display device using a conventionally known nonlinear resistance element.
are upper and lower transparent substrates, 29 is a liquid crystal, 30 is tantalum metal, 31 is an insulating film made of tantalum pentoxide (Ta 2 O 5 ) formed by anodizing tantalum metal, 32
is a pixel display electrode. This nonlinear resistance element is called a Pohl-Frenkel current or Furler or Nordheim tunnel current that flows in a thin insulating film, and utilizes the fact that a nonlinear current flows in response to an electric field. Therefore, the insulation film thickness is 50~
It needs to be extremely thin, at 400 Å. The nonlinear resistance element and the liquid crystal are tangent to each other in series. When displaying a selected point, charge is injected into the liquid crystal layer through the nonlinear resistance element to display the display. When not selected, the nonlinear resistance element is injected with charge because it is difficult for the charge to flow. Do not show.
（発明が解決しようとする問題点）
この種の非線形抵抗素子を使用した液晶表示装
置の、表示消去動作がスムーズに行なわれるため
の非線形抵抗素子の必要性は、一画素の非線形抵
抗素子の容量Cnio，ON抵抗をRON、液晶の容量を
CLC、抵抗をRLCとすると、少なくとも、CMIN＜
CLC、RON〓RLC／30である。この結果非線形抵抗
素子の面積は約20μm2以下とする必要があり、ま
た非線形抵抗素子を流れる最大電流はおよそ
1A／cm2である。液晶の動作はマルチプレツクス
駆動であり、画素に印加される電界は交番電圧で
ある。通常絶縁膜は、前記1A／cm2の電流をくり
返し流した場合の寿命はおよそ106〜107回程度で
絶縁破戒を起こす。したがつて寿命の点で問題が
ある。また非線形抵抗素子としてTa2O5を使用す
る場合、膜厚が400Å以下と薄くしかも比誘電率
が10以上と高く、比線形抵抗素子面積を20μm2以
下に設定する必要から、20cm以上の大面積表示パ
ネル作成上、極めて高精度のパターニングを行う
必要があり、製造歩留りの低下、製造コストが高
くなる。(Problem to be Solved by the Invention) The necessity of a nonlinear resistance element for smooth display erasing operation of a liquid crystal display device using this type of nonlinear resistance element is due to the capacitance of the nonlinear resistance element of one pixel. C nio , ON resistance is R ON , liquid crystal capacitance is
If C LC is the resistance, and R LC is the resistance, then at least C MIN <
C LC , R ON 〓R LC /30. As a result, the area of the nonlinear resistance element must be approximately 20 μm 2 or less, and the maximum current flowing through the nonlinear resistance element is approximately
It is 1A/ cm2 . The operation of the liquid crystal is multiplex driving, and the electric field applied to the pixels is an alternating voltage. Normally, the lifespan of an insulating film is approximately 10 6 to 10 7 times when a current of 1 A/cm 2 is repeatedly passed through the film, causing the insulation to fail. Therefore, there is a problem in terms of service life. Furthermore, when using Ta 2 O 5 as a nonlinear resistance element, the film thickness is as thin as 400 Å or less, and the dielectric constant is high at 10 or more, and the area of the specific linear resistance element must be set to 20 μm 2 or less. In producing an area display panel, it is necessary to perform extremely high-precision patterning, which lowers manufacturing yield and increases manufacturing cost.
（問題点を解決するための手段）
本発明は上記欠点を除去し、長寿命、低価格の
液晶表示装置を提供するために、水素原子を含有
するシリコン酸化膜または、水素原子を含有する
シリコン窒化膜を非線形抵抗膜として使用した。(Means for Solving the Problems) In order to eliminate the above drawbacks and provide a long-life, low-cost liquid crystal display device, the present invention aims to provide a silicon oxide film containing hydrogen atoms or a silicon oxide film containing hydrogen atoms. A nitride film was used as a nonlinear resistance film.
（作用）
本発明による液晶表示装置は、非線形抵抗膜と
して、水素原子を含有するシリコン酸化膜または
シリコン窒化膜を、非線形である半導電性絶縁膜
として使用することにより、1A／cm2以上の比較
的大電流を流しても絶縁破戒を起さず長寿命であ
り、かつ非線形抵抗膜厚が500Å〜2000Åと厚く
とることができ、そのために素子面積を極めて大
きくとることができる。この結果、パターン形成
精度が大巾に緩和され、大面積表示が容易とな
り、大巾なコストダウンを可能にする。(Function) The liquid crystal display device according to the present invention uses a silicon oxide film or a silicon nitride film containing hydrogen atoms as a nonlinear resistive film as a nonlinear semiconductive insulating film. It has a long life without causing insulation breakdown even when a relatively large current is passed through it, and the nonlinear resistance film can be made as thick as 500 Å to 2000 Å, so the device area can be extremely large. As a result, pattern formation accuracy is greatly reduced, large-area display is facilitated, and costs can be significantly reduced.
（実施例）
第１図ａは本発明による液晶表示装置の一実施
例を示す液晶表示装置の縦断面図である。１，２
は上下透明基板でありガラスを使用した。３は液
晶層でTN液晶を使用した。４は上側基板上の透
明電極、５は下側基板の透明電極であり、それぞ
れ200本のXY電極群を形成し、第１図ａではそ
の一画素を明示している。透明電極４，５はITO
（インジウム・スズ酸化物）電極である。６は非
線形抵抗膜であり、プラズマCVDによつて作成
した厚さ1000Åのシリコン酸化膜である。プラズ
マCVDによるシリコン酸化膜は、シランガスと
二酸化窒素ガスの混合ガスを使用し、基板温度は
200℃〜300℃でグロー放電を行つた。７は画素電
極であり透明導電膜である。非線形抵抗膜６を介
した液晶表示用電極４と画素電極７のオーバラツ
プ面積は500μm2である。第１図ｂは、プラズマ
CVDによる酸化膜の赤外吸収性を示す。第１図
ｂ吸収ピーク８は波数2100cm-1のSi−Ｈ、９，１
０はそれぞれ波数約1040，860cm-1のSi−Ｏであ
る。赤外吸収から求めたＨ濃度は最大50atm％で
ある。第１図ｃは、本発明による実施例第１図ａ
で使用した非線形抵抗膜の電圧対電流特性を示
す。駆動電圧Vopに対して、Vop／２で電流は約
４ケタ以下となる。またVopの交番電界を108回
以上印加しても絶縁破戒せず、ほぼ初期のIV特
性を示した。このように作成した液晶表示装置を
マルチプレツクス駆動によつて動作させたとこ
ろ、画素のコントラスト比15：１以上、クロスト
ークが全たくみられない良好な液晶表示装置を得
た。なお第１図ａにおいて、非線形抵抗膜とし
て、プラズマCVDによつて、シランガスとアン
モニアガスを主成分としたグロー放電法による、
シリコン窒化膜とすることができる。シランガス
とアンモニアガスの流量比を適切に選ぶことによ
り、第１図ｃと類似特性を得ることができ、膜中
には、Si−ＨおよびＮ−Ｈ結合が存在することを
確認した。(Embodiment) FIG. 1a is a longitudinal sectional view of a liquid crystal display device showing an embodiment of the liquid crystal display device according to the present invention. 1,2
The upper and lower transparent substrates were made of glass. 3 used TN liquid crystal in the liquid crystal layer. 4 is a transparent electrode on the upper substrate, and 5 is a transparent electrode on the lower substrate, each forming a group of 200 XY electrodes, one pixel of which is clearly shown in FIG. 1a. Transparent electrodes 4 and 5 are ITO
(indium tin oxide) electrode. 6 is a nonlinear resistance film, which is a silicon oxide film with a thickness of 1000 Å formed by plasma CVD. Silicon oxide film formed by plasma CVD uses a mixed gas of silane gas and nitrogen dioxide gas, and the substrate temperature is
Glow discharge was performed at 200°C to 300°C. 7 is a pixel electrode, which is a transparent conductive film. The overlap area between the liquid crystal display electrode 4 and the pixel electrode 7 via the nonlinear resistive film 6 is 500 μm 2 . Figure 1b shows plasma
This shows the infrared absorption of an oxide film produced by CVD. Figure 1b absorption peak 8 is Si-H with a wave number of 2100 cm -1 , 9,1
0 are Si-O with wave numbers of approximately 1040 and 860 cm -1 , respectively. The maximum H concentration determined from infrared absorption is 50 atm%. FIG. 1c shows an embodiment according to the invention FIG. 1a
This shows the voltage vs. current characteristics of the nonlinear resistive film used in . With respect to the drive voltage Vop, the current is about 4 digits or less at Vop/2. Furthermore, even when the alternating electric field of Vop was applied more than 10 8 times, the insulation did not break, and it showed almost the initial IV characteristics. When the liquid crystal display device prepared in this manner was operated by multiplex driving, a good liquid crystal display device with a pixel contrast ratio of 15:1 or more and no crosstalk was obtained. In Fig. 1a, the nonlinear resistive film was prepared by plasma CVD using a glow discharge method using silane gas and ammonia gas as main components.
It can be a silicon nitride film. By appropriately selecting the flow rate ratio of silane gas and ammonia gas, characteristics similar to those shown in FIG. 1c could be obtained, and it was confirmed that Si--H and N--H bonds were present in the film.
第５図は本発明による液晶表示装置の他の一実
施例を示す縦断面図である。１，２は上下透明基
板、３が液晶層、４，５はそれぞれ上下透明基板
上の透明電極であり、ITO（インジウム・スズ酸
化物）薄膜からなり、Ｘ−Ｙ電極群を形成した。
１１は比線形抵抗膜であり、プラズマCVD、グ
ロー放電法によるシリコン酸化膜である。このシ
リコン酸化膜は、第１図ｂ赤外吸収特性に示すSi
−Ｈ，Si−Ｏ結合が存在する。第６図は第５図非
線形抵抗膜の可視光分光透過特性を示し、光の波
長400mmから800mmの可視光領域において透過率90
％以上を有する。したがつて本発明による実施例
第５図に示すごとく、比線形抵抗膜１１を表示用
透明画素電極上全面に設けることができる。表示
用透明電極５に隣接する透明電極５′，５″の間隔
は約40μm以上に設定することにより、選択時の
もれ電荷を無視できる程度におさえることができ
た。この表示装置は、外部駆動回路との接続用パ
ツド部以外のパネル全面に非線形抵抗膜１１を形
成することができるために、非線形抵抗膜のパタ
ーン形成がきわめて容易となる。このようにして
作成した表示装置をマルチプレツクス駆動を行つ
たところ、実施例第１図ａと同様に良好な表示動
作を行うことができた。第５図の説明においてシ
リコン酸化膜を用いたが、これをシランガスとア
ンモニアガスを主成分としたプラズマCVDのグ
ロー放電法によるシリコン窒化膜とすることがで
きることはいうまでもない。また、第５図本発明
による液晶表示装置の実施例において、非線形抵
抗膜と液晶との間に、非線形抵抗膜の電気特性に
おける正負の電界印加時の対称性を向上させる目
的で、島状の透明電極を形成すれば、駆動方法が
容易となり、表示画素が切一に表示され表示状態
をさらに向上させることができる。 FIG. 5 is a longitudinal sectional view showing another embodiment of the liquid crystal display device according to the present invention. 1 and 2 are upper and lower transparent substrates, 3 is a liquid crystal layer, and 4 and 5 are transparent electrodes on the upper and lower transparent substrates, respectively, which are made of ITO (indium tin oxide) thin films, forming an XY electrode group.
11 is a specific linear resistance film, which is a silicon oxide film formed by plasma CVD or glow discharge method. This silicon oxide film has a Si
-H, Si-O bonds are present. Figure 6 shows the visible light spectral transmission characteristics of the nonlinear resistive film in Figure 5, with a transmittance of 90 in the visible light range from 400 mm to 800 mm.
% or more. Therefore, as shown in FIG. 5, an embodiment according to the present invention, a linear resistance film 11 can be provided over the entire surface of the transparent pixel electrode for display. By setting the interval between the transparent electrodes 5' and 5'' adjacent to the display transparent electrode 5 to be approximately 40 μm or more, leakage charge during selection could be suppressed to a negligible level. Since the nonlinear resistive film 11 can be formed on the entire surface of the panel except for the pads for connection with the drive circuit, pattern formation of the nonlinear resistive film is extremely easy. As a result, a good display operation similar to that in Example 1 (a) was obtained. In the explanation of FIG. It goes without saying that the silicon nitride film can be formed by the glow discharge method of plasma CVD.Furthermore, in the embodiment of the liquid crystal display device according to the present invention shown in FIG. If island-shaped transparent electrodes are formed for the purpose of improving the symmetry when applying positive and negative electric fields in the electrical characteristics of the display, the driving method will be easier, and the display pixels will all be displayed, further improving the display state. can.
なお、本発明による実施例においては、水素含
有非線形抵抗膜の形成を、プラズマCVDのグロ
ー放電法によつて行つたが、これを、光CVD法
や、水素ガスを混入したスパツター法によつて作
成することができる。 In the examples according to the present invention, the hydrogen-containing nonlinear resistance film was formed by the glow discharge method of plasma CVD, but this could also be done by the photo-CVD method or the sputtering method in which hydrogen gas was mixed. can be created.
（発明の効果）
以上述べてきたように、本発明による病晶表示
装置は、非線形抵抗膜として、水素含有したシリ
コン酸化膜または、シリコン窒化膜を使用するこ
とにより、長寿命であり、かつ非線形抵抗膜のパ
ターン形成時の精度がきわめて粗いために、大形
化が容易であり、かつ低コストで作成できるとい
うすぐれた効果を有する。(Effects of the Invention) As described above, the diseased crystal display device according to the present invention has a long life and a non-linear Since the precision in patterning the resistive film is extremely low, it has the advantage of being easy to increase in size and can be produced at low cost.
第１図ａは本発明による液晶表示装置の一実施
例を示す縦断面図、第１図ｂは本発明による液晶
表示装置の非線形抵抗膜の赤外吸収特性図、第１
図ｃは本発明による液晶表示装置の非線形抵抗膜
のＩ−Ｖ特性図、第２図は従来から知られている
表示装置の回路図、第３図は従来使用の非線形素
子を用いたときの液晶の透過率対電圧特性、第４
図は従来から知られた非線形抵抗素子を用いた液
晶表示装置の縦断面図、第５図は本発明による液
晶表示装置の他の実施例を示す縦断面図、第６図
は第５図の実施例で示した非線形抵抗膜の可視光
領域における分光透過率を示す図である。
１，２……透明基板、３……液晶層、４，５，
５′，５″，７……透明電極、６，１１……非線形
抵抗膜。
FIG. 1a is a vertical cross-sectional view showing one embodiment of a liquid crystal display device according to the present invention, FIG.
Figure c is an IV characteristic diagram of a nonlinear resistive film of a liquid crystal display device according to the present invention, Figure 2 is a circuit diagram of a conventionally known display device, and Figure 3 is a diagram of a conventionally used nonlinear element. Transmittance vs. voltage characteristics of liquid crystal, Part 4
The figure is a vertical cross-sectional view of a liquid crystal display device using a conventionally known nonlinear resistance element, FIG. 5 is a vertical cross-sectional view showing another embodiment of the liquid crystal display device according to the present invention, and FIG. FIG. 3 is a diagram showing the spectral transmittance in the visible light region of the nonlinear resistive film shown in Examples. 1, 2...Transparent substrate, 3...Liquid crystal layer, 4,5,
5', 5'', 7...Transparent electrode, 6, 11...Nonlinear resistance film.
Claims (1)
枚の基板の一方基板の内表面には透明電極が形成
され、前記２枚の基板の他方基板の内表面には駆
動電極、画素電極、および、非線形抵抗膜が形成
され、前記駆動電極と前記画素電極と前記非線形
抵抗膜を介して電気的に接続される構成であつ
て、前記透明電極と前記駆動電極との間に駆動電
圧Vopを印加し、前記画素電極上の液晶層を駆動
する液晶電気光学装置において、 前記非線形抵抗膜は、Si−Ｈ結合を有するシリ
コン酸化膜、または、Si−Ｈ結合を有するシリコ
ン窒素膜から成り、かつ、前記駆動電圧Vopを前
記駆動電極と前記画素電極との間に印加したとき
に前記非線形抵抗膜を流れる電流が、前記駆動電
圧Vopの1/2の電圧を印加したときに流れる電流
よりも４ケタ以上大きい非線形成を有することを
特徴とする液晶電気光学装置。[Claims] 1. A liquid crystal layer is sandwiched between two substrates;
A transparent electrode is formed on the inner surface of one of the two substrates, and a drive electrode, a pixel electrode, and a nonlinear resistance film are formed on the inner surface of the other of the two substrates. A liquid crystal that is electrically connected to a pixel electrode via the nonlinear resistance film, and that drives a liquid crystal layer on the pixel electrode by applying a drive voltage Vop between the transparent electrode and the drive electrode. In the electro-optical device, the nonlinear resistance film is made of a silicon oxide film having Si-H bonds or a silicon nitrogen film having Si-H bonds, and the drive voltage Vop is applied between the drive electrode and the pixel electrode. liquid crystal electricity, characterized in that a current flowing through the nonlinear resistive film when applied between the two is four or more orders of magnitude larger than a current flowing when a voltage of 1/2 of the driving voltage Vop is applied. optical equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59211669A JPS6190192A (en) | 1984-10-09 | 1984-10-09 | Liquid crystal display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59211669A JPS6190192A (en) | 1984-10-09 | 1984-10-09 | Liquid crystal display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6190192A JPS6190192A (en) | 1986-05-08 |
| JPH0513288B2 true JPH0513288B2 (en) | 1993-02-22 |
Family
ID=16609630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59211669A Granted JPS6190192A (en) | 1984-10-09 | 1984-10-09 | Liquid crystal display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6190192A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2816549B2 (en) * | 1986-10-22 | 1998-10-27 | セイコーインスツルメンツ株式会社 | Electro-optical device |
| JP2739582B2 (en) * | 1988-03-17 | 1998-04-15 | セイコーインスツルメンツ株式会社 | Manufacturing method of electro-optical device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197592A (en) * | 1981-05-29 | 1982-12-03 | Suwa Seikosha Kk | Liquid crystal display unit |
-
1984
- 1984-10-09 JP JP59211669A patent/JPS6190192A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197592A (en) * | 1981-05-29 | 1982-12-03 | Suwa Seikosha Kk | Liquid crystal display unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6190192A (en) | 1986-05-08 |
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