JPH057349B2 - - Google Patents
Info
- Publication number
- JPH057349B2 JPH057349B2 JP60040755A JP4075585A JPH057349B2 JP H057349 B2 JPH057349 B2 JP H057349B2 JP 60040755 A JP60040755 A JP 60040755A JP 4075585 A JP4075585 A JP 4075585A JP H057349 B2 JPH057349 B2 JP H057349B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- elements
- nitrides
- aluminum nitride
- fluorides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 31
- 150000004767 nitrides Chemical class 0.000 claims description 23
- 150000002222 fluorine compounds Chemical class 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- -1 oxides Chemical class 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 239000011812 mixed powder Substances 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 8
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
産業上の利用分野
この発明は窒化アルミニウム焼結体及びその製
造方法に係り、更に詳しくは、緻密質で熱伝導
性、絶縁性、誘電率などの実用上の諸特性に優れ
ている窒化アルミニウム焼結体及びその製造方法
に関する。
従来の技術
窒化アルミニウム（AlN）焼結体は、高熱伝
導性、高絶縁性を有するなど、半導体工業におい
て、絶縁材料、あるいはパツケージ材料として注
目を集めつつある。
ところで、AlN単独で焼結体を製造する場合、
AlN自体の焼結体が良くなる為、AlN粉末を成
形後、焼結して得られるAlN焼結体の相対密度
（AlNの理論密度3.26ｇ／cm3を基準とする）は、
焼結条件にも依るが、高々70〜80％しか示さな
い。また、その為、ホツトプレスを用いる加圧焼
結も試みられたが、良好な結果は得られていな
い。
一般にフオノン伝導を主体とする窒化アルミニ
ウム焼結体の如き絶縁性セラミツクスでは、気
孔、不純物等の欠陥によりフオノン散乱が生じ、
熱伝導率が低減する。
一方、最近のLSIの進歩はめざましく、集積度
の向上が著しい。これには、ICチツプサイズの
向上も寄与しており、ICチツプサイズの向上に
伴つてパツケージ当りの発熱量が増大している。
このため基板材料の放熱性が重要視されるように
なつてきた。また、従来IC基板として用いられ
ていたアルミナ焼結体の熱伝導率では放熱性が不
十分であり、ICチツプの発熱量の増大に対応で
きなくなりつつある。このためアルミナ基板に代
わるものとして、高熱伝導性のベリリア基板が使
用されているベリリアは毒性が強く取扱いが難し
いという欠点がある。
以上の様な技術的背景から、高絶縁性を有する
窒化アルミニウム焼結体の高熱伝導化、すなわち
高密度化が望まれるものである。
発明が解決すべき課題
本発明の目的は、緻密質で高熱伝導率の窒化ア
ルミニウム焼結体およびその製造方法を提供する
ことにある。さらに詳細には本発明の目的は、半
導体の絶縁材料あるいはパツケージ材料として好
適に使用できる窒化アルミニウム焼結体およびそ
の製造方法を提供することにある。
課題を解決するための手段
本発明者らは、上記の従来技術の問題点に鑑み
て、窒化アルミニウム焼結体に対し種々検討を行
い、その結果、Ｙ、Sc、La、Ce、Smなどの周
期律表ａ族系列元素の窒化物とａ、ａ族元
素の酸化物、フツ化物の添加が窒化アルミニウム
の焼結性を向上させ、緻密質の焼結体の実現に有
効であること、また、焼結体の熱伝導率の向上に
有効であることを見い出したものである。
すなわち、本発明に従うと、周期律表ａ族系
列元素の窒化物から選ばれた少なくとも１種類の
粉末とａ族元素の酸化物、フツ化物、ａ族元
素の窒化物、酸化物、フツ化物のうち１種または
２種以上をａ族元素の窒化物と併せて0.1〜
5.0wt％含む窒化アルミニウムの混合粉末から焼
結されたことを特徴とする、緻密質で熱伝導性の
優れた窒化アルミニウム焼結体が提供される。
さらに本発明に従うと、周期律表ａ族系列元
素、すなわちＹ、Sc、La、Ce、Smなどの元素
の窒化物から選ばれた少なくとも１種類の粉末と
ａ族元素の酸化物、フツ化物、ａ族元素の窒
化物、酸化物、フツ化物のうち１種または２種以
上をａ族元素の窒化物と併せて0.1〜5.0wt％含
む窒化アルミニウムの混合粉末を成形し、ついで
1500〜2200℃の温度で、非酸化性雰囲気中で焼結
することを特徴とする窒化アルミニウム焼結体の
製造方法が提供される。
上記非酸化性雰囲気は、真空、窒素ガス、水素
ガス、一酸化炭素ガス、アルゴンガス、ヘリウム
ガスより成る群から選ばれた１種または２種以上
の雰囲気である。
本発明により製造された窒化アルミニウム焼結
体は93％以上の相対密度を示し、室温における熱
伝導率は80W／ｍ・Ｋ以上である。
発明の作用
次に本発明の窒化アルミニウム焼結体の成分範
囲の限定理由およびその製造方法の条件限定理由
を説明する。
周期律表ａ族系列元素の窒化物とａ族元素
の酸化物、フツ化物、ａ族元素の窒化物、酸化
物、フツ化物のうち１種または２種以上をａ族
元素の窒化物と併せて0.1〜5.0wt％の混合割合と
したのは、0.1wt％未満では、添加効果がなく、
十分に緻密な焼結体が得られず、また、5.0wt％
を超えると、得られる焼結体の熱伝導率が低下す
る傾向を示すためである。
焼結温度は1500〜2200℃としたのは、1500℃未
満では、十分に焼結が行われないためである。窒
化アルミニウムの焼結に関しては、焼結温度は高
い方が望ましいが、2200℃以上では、窒化アルミ
ニウムの分散反応が著しい促進され、焼結体の重
量減少が大きくなる。
例えばＹ、La、Sc、Sm、Ceなどの周期律表
ａ族系列元素の窒化物とａ族元素の酸化物、
フツ化物、ａ族元素の窒化物、酸化物、フツ化
物のうち１種または２種以上の添加により、窒化
アルミニウムの焼結性が向上する機構は明らかで
はないが、周期律表ａ族系列元素の窒化物と
ａ族元素の酸化物、フツ化物、ａ族元素の窒化
物、酸化物、フツ化物のうち１種または２種以上
が添加された場合その複合効果によつて窒化アル
ミニウムの固相焼結が促進されるためと考えられ
る。
また、後記の実施例で示されるように、熱伝導
率は、無添加の窒化アルミニウムの焼結体に比べ
最高３倍強の増加を示している。これは、窒化ア
ルミニウム焼結体の緻密化が促進されるためと考
えられるが、熱伝導率が向上する機構の詳細は明
らかではない。
以下、本発明の実施例により説明するが、この
実施例は本発明の範囲を何等制限するものではな
いことは勿論である。
実施例
窒化アルミニウム粉末（平均粒径１〜3μｍ）
に平均粒径0.5μｍの窒化イツトリウム粉末及び、
酸化イツトリウム、フツ化イツトリウお、酸化カ
ルシウム、窒化カルシウム、フツ化カルシウムの
中から選ばれた少なくとも１種類以上の粉末を加
えた混合粉末を2t／cm2のプレス圧で予備成型し、
1800℃、３時間常圧焼結（N2雰囲気、1.0気圧）
を行つた。
得られた焼結体の密度は表１に示すように、焼
結体実測値で93％以上に改善され、これによつて
焼結体肌実測値で熱伝導率はいずれも80W／ｍ・
Ｋ以上であつた。
INDUSTRIAL APPLICATION FIELD This invention relates to an aluminum nitride sintered body and a method for manufacturing the same, and more specifically, the present invention relates to an aluminum nitride sintered body that is dense and has excellent practical properties such as thermal conductivity, insulation, and dielectric constant. This article relates to a body and a method for producing the same. BACKGROUND ART Aluminum nitride (AlN) sintered bodies are attracting attention as insulating materials or package materials in the semiconductor industry due to their high thermal conductivity and high insulation properties. By the way, when manufacturing a sintered body using AlN alone,
Since the sintered body of AlN itself becomes better, the relative density of the AlN sintered body obtained by molding and sintering the AlN powder (based on the theoretical density of AlN, 3.26 g/cm 3 ) is:
Depending on the sintering conditions, it shows only 70-80% at most. For this reason, pressure sintering using a hot press has also been attempted, but good results have not been obtained. Generally, in insulating ceramics such as aluminum nitride sintered bodies that mainly conduct phonons, phonon scattering occurs due to defects such as pores and impurities.
Thermal conductivity is reduced. On the other hand, recent advances in LSI have been remarkable, with significant improvements in the degree of integration. Improvements in IC chip size are also contributing to this, and as IC chip size improves, the amount of heat generated per package increases.
For this reason, importance has been placed on the heat dissipation properties of substrate materials. Furthermore, the thermal conductivity of the alumina sintered bodies conventionally used as IC substrates is insufficient for heat dissipation, and they are becoming unable to cope with the increase in heat generation of IC chips. For this reason, a highly thermally conductive beryllia substrate is used as an alternative to an alumina substrate, but beryllia has the drawback of being highly toxic and difficult to handle. From the above-mentioned technical background, it is desired that aluminum nitride sintered bodies having high insulation properties have higher thermal conductivity, that is, higher density. Problems to be Solved by the Invention An object of the present invention is to provide a dense aluminum nitride sintered body with high thermal conductivity and a method for manufacturing the same. More specifically, it is an object of the present invention to provide a sintered aluminum nitride body that can be suitably used as an insulating material or a package material for semiconductors, and a method for manufacturing the same. Means for Solving the Problems In view of the problems of the prior art described above, the present inventors conducted various studies on aluminum nitride sintered bodies, and as a result, found that Y, Sc, La, Ce, Sm, etc. The addition of nitrides of Group A elements of the periodic table and oxides and fluorides of Group A and A elements improves the sinterability of aluminum nitride and is effective in realizing dense sintered bodies; , was found to be effective in improving the thermal conductivity of sintered bodies. That is, according to the present invention, at least one powder selected from nitrides of group A elements of the periodic table, oxides, fluorides of group A elements, nitrides, oxides, and fluorides of group A elements One or more of these together with nitrides of group a elements from 0.1 to
A dense aluminum nitride sintered body with excellent thermal conductivity is provided, which is characterized by being sintered from a mixed powder of aluminum nitride containing 5.0 wt%. Furthermore, according to the present invention, at least one powder selected from nitrides of group A elements of the periodic table, that is, elements such as Y, Sc, La, Ce, and Sm, and oxides and fluorides of group A elements, A mixed powder of aluminum nitride containing 0.1 to 5.0 wt% of one or more of nitrides, oxides, and fluorides of group A elements together with nitrides of group A elements is molded, and then
A method for producing an aluminum nitride sintered body is provided, which comprises sintering in a non-oxidizing atmosphere at a temperature of 1500 to 2200°C. The non-oxidizing atmosphere is one or more atmospheres selected from the group consisting of vacuum, nitrogen gas, hydrogen gas, carbon monoxide gas, argon gas, and helium gas. The aluminum nitride sintered body produced according to the present invention exhibits a relative density of 93% or more, and a thermal conductivity at room temperature of 80 W/m·K or more. Effect of the Invention Next, the reason for limiting the range of components of the aluminum nitride sintered body of the present invention and the reason for limiting the conditions of the manufacturing method will be explained. Nitride of Group A elements of the periodic table, oxides and fluorides of Group A elements, and one or more of the nitrides, oxides, and fluorides of Group A elements in combination with nitrides of Group A elements. The reason why we set the mixing ratio to be 0.1 to 5.0wt% is because if it is less than 0.1wt%, there is no addition effect.
A sufficiently dense sintered body could not be obtained, and 5.0wt%
This is because, if the temperature exceeds 100%, the thermal conductivity of the obtained sintered body tends to decrease. The reason why the sintering temperature was set to 1500 to 2200°C is that sintering is not performed sufficiently at less than 1500°C. Regarding the sintering of aluminum nitride, it is desirable that the sintering temperature be high, but at temperatures above 2200°C, the dispersion reaction of aluminum nitride is significantly accelerated, resulting in a large weight loss of the sintered body. For example, nitrides of group a elements of the periodic table such as Y, La, Sc, Sm, Ce, etc. and oxides of group a elements,
The mechanism by which the sinterability of aluminum nitride is improved by the addition of one or more of fluorides, nitrides, oxides, and fluorides of group A elements is not clear, but When one or more of nitrides, oxides and fluorides of group A elements, and nitrides, oxides, and fluorides of group A elements are added, the combined effect causes the solid phase of aluminum nitride to form. This is thought to be because sintering is promoted. Furthermore, as shown in the examples below, the thermal conductivity increased by a maximum of three times compared to the sintered body of aluminum nitride without additives. This is thought to be because the densification of the aluminum nitride sintered body is promoted, but the details of the mechanism by which the thermal conductivity improves are not clear. The present invention will be explained below using examples, but it goes without saying that these examples do not limit the scope of the present invention in any way. Example Aluminum nitride powder (average particle size 1-3 μm)
Yttrium nitride powder with an average particle size of 0.5 μm and
A mixed powder containing at least one powder selected from yttrium oxide, yttrium fluoride, calcium oxide, calcium nitride, and calcium fluoride is preformed at a press pressure of 2t/ cm2 ,
Normal pressure sintering at 1800℃ for 3 hours ( N2 atmosphere, 1.0 atm)
I went there. As shown in Table 1, the density of the obtained sintered body was improved to 93% or more based on the actual value of the sintered body, and the thermal conductivity of the sintered body was 80 W/m・
It was over K.
【表】【table】
【表】
発明の効果
以上に説明の如く本発明は、周期律表ａ族系
列元素の窒化物から選ばれた少なくとも１種類の
粉末とａ族元素の酸化物、フツ化物、ａ族元
素の窒化物、酸化物、フツ化物のうち１種または
２種以上をａ族元素の窒化物と併せて0.1〜
5.0wt％含む窒化アルミニウムの混合粉末を成形
し、次いで1500〜2200℃の温度で非酸化性雰囲気
中で焼結することを特徴とし、本発明により得ら
れた窒化アルミニウム焼結体は、緻密質であり、
そのため熱伝導性、絶縁性、誘電特性などに優
れ、半導体の絶縁材料、あるいはパツケージ材料
として有用である。
本発明の窒化アルミニウム焼結体は、サーデイ
ツプ用基板、サーパツク用基板、ハイブリツド
IC用基板等のIC基板のみならず、パワートラン
ジスタ、パワーダイオードおよびレーザダイオー
ド用のヒートシンクとして、更にレーザーデイス
ク、或いはマイカ代替としての絶縁性薄板として
好適に利用できる。[Table] Effects of the Invention As explained above, the present invention provides at least one powder selected from nitrides of Group A elements of the periodic table, oxides and fluorides of Group A elements, and nitrides of Group A elements. 0.1 to 0.1 or more in combination with nitrides of group a elements, one or more of compounds, oxides, and fluorides
The aluminum nitride sintered body obtained by the present invention is characterized by molding a mixed powder of aluminum nitride containing 5.0 wt% and then sintering it at a temperature of 1500 to 2200°C in a non-oxidizing atmosphere. and
Therefore, it has excellent thermal conductivity, insulation properties, dielectric properties, etc., and is useful as an insulating material for semiconductors or a packaging material. The aluminum nitride sintered body of the present invention can be used for sur-deep dip substrates, surpack substrates, and hybrid sintered bodies.
It can be suitably used not only as an IC substrate such as an IC substrate, but also as a heat sink for power transistors, power diodes, and laser diodes, as a laser disk, or as an insulating thin plate as an alternative to mica.
Claims (1)
も１種類の粉末と、ａ族元素の酸化物、フツ化
物、ａ族元素の窒化物、酸化物、フツ化物のう
ち１種または２種以上をａ族元素の窒化物と併
せて0.1〜5.0重量％とAlN粉末とを混合調製した
混合粉末から焼結されたことを特徴とする窒化ア
ルミニウム焼結体。 ２ 周期律表ａ族系列元素の窒化物の少なくと
も１種類の粉末と、ａ族元素の酸化物、フツ化
物、ａ族元素の窒化物、酸化物、フツ化物のう
ち１種または２種以上をａ族の窒化物と併せて
0.1〜5.0重量％とAlN粉末とを混合調製した混合
粉末を成形し、次いで1500〜2200℃の温度で真
空、窒素ガス、水素ガス、一酸化炭素ガス、アル
ゴンガス、ヘリウムガスより成る群から選ばれた
１種または２種以上の非酸化性雰囲気中で焼結す
ることを特徴とする窒化アルミニウム焼結体の製
造方法。[Scope of Claims] 1. At least one powder of nitrides of group A elements of the periodic table, oxides, fluorides of group A elements, and one of nitrides, oxides, and fluorides of group A elements. An aluminum nitride sintered body, characterized in that it is sintered from a mixed powder prepared by mixing 0.1 to 5.0% by weight of one or more species with a nitride of a group A element and AlN powder. 2. Powder of at least one type of nitride of group A elements of the periodic table, and one or more types of oxides, fluorides, and nitrides, oxides, and fluorides of group A elements. Together with group a nitrides
A mixed powder prepared by mixing 0.1 to 5.0% by weight and AlN powder is molded and then heated at a temperature of 1500 to 2200°C under vacuum, nitrogen gas, hydrogen gas, carbon monoxide gas, argon gas, or helium gas selected from the group consisting of A method for producing an aluminum nitride sintered body, comprising sintering in one or more non-oxidizing atmospheres.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60040755A JPS61201669A (en) | 1985-03-01 | 1985-03-01 | Aluminum nitride sintered body and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60040755A JPS61201669A (en) | 1985-03-01 | 1985-03-01 | Aluminum nitride sintered body and manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201669A JPS61201669A (en) | 1986-09-06 |
| JPH057349B2 true JPH057349B2 (en) | 1993-01-28 |
Family
ID=12589439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60040755A Granted JPS61201669A (en) | 1985-03-01 | 1985-03-01 | Aluminum nitride sintered body and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61201669A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0712981B2 (en) * | 1985-03-13 | 1995-02-15 | 株式会社東芝 | Method for manufacturing aluminum nitride sintered body |
| JPS61205670A (en) * | 1985-03-07 | 1986-09-11 | 住友電気工業株式会社 | Aluminum nitride sintered body and manufacture |
| JP2565305B2 (en) * | 1985-10-31 | 1996-12-18 | 京セラ株式会社 | High thermal conductivity aluminum nitride sintered body and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180965A (en) * | 1983-11-18 | 1985-09-14 | ゼネラル・エレクトリツク・カンパニイ | High heat conductivity aluminum nitride ceramic body and manufacture |
| JPS61146764A (en) * | 1984-12-17 | 1986-07-04 | ティーディーケイ株式会社 | Aluminum nitride sintered body and manufacture |
| JPS61183174A (en) * | 1985-02-08 | 1986-08-15 | 株式会社東芝 | Aluminum nitride aintered body |
-
1985
- 1985-03-01 JP JP60040755A patent/JPS61201669A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180965A (en) * | 1983-11-18 | 1985-09-14 | ゼネラル・エレクトリツク・カンパニイ | High heat conductivity aluminum nitride ceramic body and manufacture |
| JPS61146764A (en) * | 1984-12-17 | 1986-07-04 | ティーディーケイ株式会社 | Aluminum nitride sintered body and manufacture |
| JPS61183174A (en) * | 1985-02-08 | 1986-08-15 | 株式会社東芝 | Aluminum nitride aintered body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61201669A (en) | 1986-09-06 |
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| EXPY | Cancellation because of completion of term |