JPH0566905B2 - - Google Patents
Info
- Publication number
- JPH0566905B2 JPH0566905B2 JP62182400A JP18240087A JPH0566905B2 JP H0566905 B2 JPH0566905 B2 JP H0566905B2 JP 62182400 A JP62182400 A JP 62182400A JP 18240087 A JP18240087 A JP 18240087A JP H0566905 B2 JPH0566905 B2 JP H0566905B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- group
- oxide
- weight
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Description
［産業上の利用分野］
本発明は窒化アルミニウム焼結体およびその製
造方法に係り、更に詳しくは緻密質で熱伝導性、
絶縁性、誘電率などの実用上の諸特性に秀れてい
る窒化アルミニウム焼結体の製造方法に関する。
［従来の技術］
最近のLSIの進歩はめざましく、集積度の向上
が著しい。これには、ICチツプサイズの向上も
寄与しており、ICチツプサイズの向上に伴つて
パツケージ当りの発熱量が増大している。このた
め基板材料の放熱性が重要視されるようになつて
きた。また、従来IC基板として用いられていた
アルミナ焼結体の熱伝導率では放熱性が不十分で
あり、ICチツプの発熱量の増大に対応できなく
なりつつある。このためアルミナ基板に代わるも
のとして、高熱伝導性のベリリア基板が検討され
ているが、ベリリアは毒性が強く取扱いが難しい
という欠点がある。
窒化アルミニウム（AIN）は、本来、材質的
に高熱伝導性、高絶縁性を有し、毒性もないた
め、半導体工業において絶縁材料あるいはパツケ
ージ材料として注目を集めている。
［発明が解決しようとする問題点］
上述のように窒化アルミニウムは理論的には単
結晶としては高熱伝導性、高絶縁性を有する材料
である。しかしながら、窒化アルミニウム粉末か
ら焼結体を製造する場合、窒化アルミニウム粉末
自体の焼結性が良くないため、粉末成形後、焼結
して得られる窒化アルミニウム焼結体の相対密度
（窒化アルミニウムの理論密度3.26ｇ／cm3を基準
とする）は、焼結条件にも依るが、高々70〜80％
しか示さず、多量の気孔を包含する。
一方、窒化アルミニウム焼結体の如き絶縁性セ
ラミツクスの熱伝導機構は、フオノン伝導を主体
とするため気孔、不純物等の欠陥はフオノン散乱
を起こし、熱伝導率は低レベルのものしか得られ
ない。
緻密質で、良好な熱伝導性の窒化アルミニウム
焼結体を得るため窒化アルミニウム粉末に種々の
焼結助剤を添加し、ホツトプレスあるいは常圧焼
結することが試みられており、かなり良質の焼結
体が得られている。たとえば、酸化カルシウム
（CaO）、酸化バリウム（BaO）、酸化ストロンチ
ウム（SrO）などを窒化アルミニウム粉末に添加
して焼結する方法（特公昭58−49510号）がある。
この方法によれば相対密度98％以上で、熱伝導率
0.10〜0.13cal／cm・sec・deg（42〜54W／ｍ・ｋ）
（室温）のものが得られている。しかし、この程
度の値の熱伝導率では今後のIC、LSIの集積度向
上による発熱量の増大に対応するには十分といえ
ない。
一方、緻密質で高強度の窒化アルミニウム焼結
体を得ることを目的として、窒化アルミニウム粉
末にY2O3及びSiO2等を添加する試みもなされて
おり（特公昭56−9475号）、98％以上の相対密度
を得ているが、熱伝導率は0.07cal／cm・sec・
deg（29W／ｍ・ｋ）に満たない程の低レベルで
ある。
本発明の目的は、今後の半導体用絶縁材料ある
いはパツケージ材料として好適に使用できるよう
な緻密質で且つ熱伝導性、絶縁性、誘電率などの
実用上の諸特性に優れている窒化アルミニウム焼
結体とその製造方法を提供することにある。
［問題点を解決するための手段］
本発明者らは高熱伝導性の窒化アルミニウム焼
結体を種々検討したところ、焼結助剤として用い
るａ族化合物を焼結中に焼結体から抜き、焼結
体中のａ族化合物含有量を添加量に比べ減少せ
しめることによつて、熱伝導率に秀れた焼結体を
得ることを見出したものである。本発明は、高熱
伝導性で、かつ誘電率が12以下の窒化アルミニウ
ム焼結体とその製造方法、すなわち、原料粉末の
成形体を、窒化ホウ素またはカーボンの粉末ある
いは成形体と接触させて加熱することによつて、
原料に添加したａ族元素酸化物と窒化アルミニ
ウム粉末に含有される酸素を流出除去させる方法
に関する発明である。
そのため、使用する窒化ホウ素あるいはカーボ
ンは粉末またはその成形体である必要があり、
ａ族酸化物を吸収するためには多孔質でなければ
ならない。この点で先行技術の特開昭60−127267
で使用する黒鉛容器とは異なるものである。
また、焼結時間は、窒化ホウ素あるいはカーボ
ンの粉末あるいは成形体に吸収させるために３時
間以上の加熱が必要となる。
窒化アルミニウムの緻密化に必要なａ族化合
物がそのまま焼結体中に残存すると、熱伝導率の
低下だけでなく、耐酸化性、耐食性劣化をひきお
こすが、カーボンまたは窒化ホウ素成形体あるい
はそれらの粉末に接した状態で３時間以上加熱焼
結すればａ族酸化物は、それらに吸収されるた
めに、焼結体中に残留する量が少なくなるものと
考えられる。
特にａ族元素酸化物量を1.0重量％以下に低
減させた場合、誘電率の増加を防止することが可
能となる。それに基づいて特許請求の範囲に記載
のとおりの構成を有する本発明をしたものであ
る。
すなわち、本発明は窒化アルミニウムに酸化ス
カンジウム、酸化イツトリウム、酸化セリウム等
のａ族酸化物を添加し、窒化アルミニウム中の
酸素とアルミニウムとの間で反応を起させ、窒化
アルミニウムを緻密化させると同時に窒化アルミ
ニウム中の酸素を吸収し、窒化アルミニウムを高
熱伝導化せしめるものであり、ａ族酸化物が
0.01〜1.0重量％で酸素が0.01〜2.0重量％含むこ
とを特徴とする窒化アルミニウム焼結体である。
ここでａ族酸化物量は1.0重量％を越えると誘
電率が高く、また耐酸性が劣るし、酸素量が2.0
重量％を越えると、熱伝導率が低くなる。さらに
ａ族酸化物、酸素量が0.01％未満では緻密質の
焼結体が得られていない。
本発明は窒化アルミニウム粉とａ族酸化物粉
末を混合後非酸化雰囲気中（800〜2200℃で焼結
し、焼結体中のａ族酸化物量を配合量よりも減
少させることを特徴とする。ａ族酸化物量の配
合量は5.0重量％を越えると焼結体中のａ族酸
化物量が過大となり、0.5重量％未満では焼結体
の緻密化、高熱伝導化が困難である。また窒化ア
ルミニウム粉末としては、酸素含有量が2.0重量
％を越えると熱伝導度が低くなるし、平均粒径が
2μを越えると緻密化が困難である。焼結中に
ａ族酸化物を減少せしめるためには、カーボン雰
囲気が好ましいが、特に成形体とカーボンまたは
窒化ホウ素の成形体、粉末を接して加熱焼結すれ
ば、ａ族酸化物は、それらに吸収されるため
に、焼結体中に残留する量が少なくなるものと考
えられる。
［実施例］
以下、実施例および比較例を表１に具体的に説
明する。
[Industrial Application Field] The present invention relates to an aluminum nitride sintered body and a method for manufacturing the same, and more specifically, it relates to an aluminum nitride sintered body and a method for manufacturing the same, and more specifically, it is a dense, thermally conductive,
This invention relates to a method for manufacturing aluminum nitride sintered bodies that have excellent practical properties such as insulation and dielectric constant. [Conventional technology] Recent advances in LSI have been remarkable, with significant improvements in the degree of integration. Improvements in IC chip size are also contributing to this, and as IC chip size improves, the amount of heat generated per package increases. For this reason, importance has been placed on the heat dissipation properties of substrate materials. Furthermore, the thermal conductivity of the alumina sintered bodies conventionally used as IC substrates is insufficient for heat dissipation, and they are becoming unable to cope with the increase in heat generation of IC chips. For this reason, a highly thermally conductive beryllia substrate is being considered as an alternative to the alumina substrate, but beryllia has the drawback of being highly toxic and difficult to handle. Aluminum nitride (AIN) inherently has high thermal conductivity, high insulation properties, and is nontoxic, so it is attracting attention as an insulating material or package material in the semiconductor industry. [Problems to be Solved by the Invention] As described above, aluminum nitride is theoretically a material that has high thermal conductivity and high insulation properties as a single crystal. However, when producing a sintered body from aluminum nitride powder, the sinterability of the aluminum nitride powder itself is not good, so the relative density of the aluminum nitride sintered body obtained by sintering after powder compaction (aluminum nitride theory) (based on density 3.26g/ cm3 ) is at most 70-80%, depending on the sintering conditions.
It shows only a large amount of pores and contains a large amount of pores. On the other hand, the heat conduction mechanism of insulating ceramics such as aluminum nitride sintered bodies is mainly based on phonon conduction, so defects such as pores and impurities cause phonon scattering, and only a low level of thermal conductivity can be obtained. In order to obtain a dense aluminum nitride sintered body with good thermal conductivity, attempts have been made to add various sintering aids to aluminum nitride powder and perform hot pressing or pressureless sintering. Solids have been obtained. For example, there is a method of adding calcium oxide (CaO), barium oxide (BaO), strontium oxide (SrO), etc. to aluminum nitride powder and sintering it (Japanese Patent Publication No. 49510/1983).
According to this method, the relative density is 98% or more, and the thermal conductivity is
0.10~0.13cal/cm・sec・deg (42~54W/m・k)
(room temperature) is obtained. However, this level of thermal conductivity cannot be said to be sufficient to cope with the increase in heat generation due to future increases in the degree of integration of ICs and LSIs. On the other hand, attempts have been made to add Y2O3 , SiO2 , etc. to aluminum nitride powder with the aim of obtaining a dense and high-strength aluminum nitride sintered body (Japanese Patent Publication No. 56-9475), 98 % or more, but the thermal conductivity is 0.07 cal/cm・sec・
The level is so low as to be less than deg (29W/m・k). The object of the present invention is to produce sintered aluminum nitride that is dense and has excellent practical properties such as thermal conductivity, insulation, and dielectric constant, so that it can be suitably used as an insulating material for semiconductors or a package material in the future. The objective is to provide the body and its manufacturing method. [Means for Solving the Problems] The present inventors investigated various highly thermally conductive aluminum nitride sintered bodies, and found that a group a compound used as a sintering aid was extracted from the sintered body during sintering, and It has been discovered that a sintered body with excellent thermal conductivity can be obtained by reducing the content of the group a compound in the sintered body compared to the amount added. The present invention provides an aluminum nitride sintered body with high thermal conductivity and a dielectric constant of 12 or less, and a method for producing the same, that is, a molded body of raw material powder is brought into contact with boron nitride or carbon powder or a molded body and heated. By the way,
This invention relates to a method for removing oxygen contained in group A element oxides and aluminum nitride powder added to raw materials. Therefore, the boron nitride or carbon used must be powder or compacted form thereof.
It must be porous in order to absorb Group A oxides. In this respect, the prior art JP-A-60-127267
This is different from the graphite container used in Further, the sintering time requires heating for 3 hours or more in order to absorb the powder into the boron nitride or carbon powder or compact. If Group A compounds necessary for densification of aluminum nitride remain in the sintered body, they will not only cause a decrease in thermal conductivity but also deterioration of oxidation resistance and corrosion resistance. It is thought that if the oxide is heated and sintered in contact with the sintered body for 3 hours or more, the group a oxides will be absorbed by the oxides, so that the amount remaining in the sintered body will be reduced. In particular, when the amount of group a element oxide is reduced to 1.0% by weight or less, it becomes possible to prevent the dielectric constant from increasing. Based on this, the present invention having the configuration as described in the claims has been made. That is, the present invention adds Group A oxides such as scandium oxide, yttrium oxide, and cerium oxide to aluminum nitride, causes a reaction between oxygen in the aluminum nitride and aluminum, and simultaneously densifies the aluminum nitride. It absorbs oxygen in aluminum nitride and makes aluminum nitride highly thermally conductive.
The present invention is an aluminum nitride sintered body characterized by containing 0.01 to 1.0% by weight of oxygen and 0.01 to 2.0% by weight of oxygen.
If the amount of group a oxide exceeds 1.0% by weight, the dielectric constant will be high and the acid resistance will be poor, and the amount of oxygen will be 2.0% by weight.
If it exceeds % by weight, the thermal conductivity decreases. Further, if the amount of group A oxide or oxygen is less than 0.01%, a dense sintered body cannot be obtained. The present invention is characterized in that aluminum nitride powder and group A oxide powder are mixed and then sintered in a non-oxidizing atmosphere (at 800 to 2200°C) to reduce the amount of group A oxide in the sintered body compared to the blended amount. If the amount of Group A oxides exceeds 5.0% by weight, the amount of Group A oxides in the sintered body becomes excessive, and if it is less than 0.5% by weight, it is difficult to make the sintered body dense and have high thermal conductivity. As for aluminum powder, if the oxygen content exceeds 2.0% by weight, the thermal conductivity will decrease and the average particle size will decrease.
If it exceeds 2μ, it will be difficult to densify it. In order to reduce group A oxides during sintering, a carbon atmosphere is preferable, but especially if the compact is heated and sintered by contacting the compact with carbon or boron nitride compact or powder, the group A oxides will be reduced. It is thought that the amount remaining in the sintered body is reduced due to absorption by the sintered body. [Examples] Examples and comparative examples will be specifically described in Table 1 below.
【表】
上記表１から原料組成物中のａ族元素の酸化
物の量あるいは焼結体中のａ族元素の酸化物の
量が本発明の成分の範囲外にある比較例に対し
て、これらが本発明の組成範囲内にある各実施例
の製品は、熱伝導率が大きく、誘電率が小さいこ
とがわかる。
［発明の効果］
以上、説明したように、本発明の窒化アルミニ
ウム焼結体は従来のものに比較して熱伝導率が高
く、優れた放熱性を有するIC基板として有用で
ある。[Table] From Table 1 above, for the comparative example in which the amount of the oxide of the group A element in the raw material composition or the amount of the oxide of the group A element in the sintered body is outside the range of the components of the present invention, It can be seen that the products of each example, which are within the composition range of the present invention, have high thermal conductivity and low dielectric constant. [Effects of the Invention] As explained above, the aluminum nitride sintered body of the present invention has higher thermal conductivity than conventional ones, and is useful as an IC substrate having excellent heat dissipation properties.
Claims (1)
酸化物が0.01〜1.0重量％、酸素含有量が0.1〜1.0
重量％の範囲にあり、かつ誘電率が12以下で、熱
伝導率が150W／ｍｋ以上であることを特徴とす
る窒化アルミニウム焼結体。 ２ 酸素含有量2.0重量％以下で、かつ平均粒子
径2μｍ以下である窒化アルミニウム粉末に対し、
ａ族酸化物、または加熱により酸化物に変換す
るａ族元素化合物を酸化物換算で0.5〜5.0重量
％の範囲になるように混合、成形した後、成形体
を窒化ホウ素またはカーボンの粉末またはそれら
の成形体に接触させた状態で非酸化雰囲気中で
1800〜2200℃で３時間以上焼結することによつて
焼結体中のａ族元素の酸化物および酸素含有量
を配合量より少ない、0.01〜1.0重量％の範囲に
なるように流出除去または減少させることを特徴
とする窒化アルミニウム焼結体の製造方法。[Claims] 1 Main component is aluminum nitride, 0.01 to 1.0% by weight of group A element oxide, and 0.1 to 1.0% oxygen content.
% by weight, a dielectric constant of 12 or less, and a thermal conductivity of 150 W/mk or more. 2 For aluminum nitride powder with an oxygen content of 2.0% by weight or less and an average particle size of 2 μm or less,
After mixing and molding a Group A oxide or a Group A element compound that can be converted into an oxide by heating to a concentration in the range of 0.5 to 5.0% by weight in terms of oxide, the molded body is mixed with boron nitride or carbon powder or the like. in a non-oxidizing atmosphere while in contact with the molded body of
By sintering at 1800 to 2200°C for 3 hours or more, the oxides and oxygen contents of group A elements in the sintered body are removed or removed so that they are in the range of 0.01 to 1.0% by weight, which is less than the blended amount. A method for producing an aluminum nitride sintered body, characterized by reducing the amount of aluminum nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62182400A JPS6428280A (en) | 1987-07-23 | 1987-07-23 | Sintered aluminum nitride and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62182400A JPS6428280A (en) | 1987-07-23 | 1987-07-23 | Sintered aluminum nitride and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6428280A JPS6428280A (en) | 1989-01-30 |
| JPH0566905B2 true JPH0566905B2 (en) | 1993-09-22 |
Family
ID=16117648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62182400A Granted JPS6428280A (en) | 1987-07-23 | 1987-07-23 | Sintered aluminum nitride and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428280A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6017485A (en) * | 1996-03-28 | 2000-01-25 | Carborundum Corporation | Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60127267A (en) * | 1983-12-12 | 1985-07-06 | 株式会社東芝 | High heat conductivity aluminum nitride sintered body |
| JPS61117161A (en) * | 1984-11-09 | 1986-06-04 | 株式会社東芝 | Manufacture of aluminium nitride ceramics |
| JPS6259575A (en) * | 1985-09-11 | 1987-03-16 | 電気化学工業株式会社 | Production of aluminum nitride sintered body |
| JPS62105960A (en) * | 1985-10-30 | 1987-05-16 | 株式会社トクヤマ | Manufacture of aluminum nitride sintered body |
-
1987
- 1987-07-23 JP JP62182400A patent/JPS6428280A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60127267A (en) * | 1983-12-12 | 1985-07-06 | 株式会社東芝 | High heat conductivity aluminum nitride sintered body |
| JPS61117161A (en) * | 1984-11-09 | 1986-06-04 | 株式会社東芝 | Manufacture of aluminium nitride ceramics |
| JPS6259575A (en) * | 1985-09-11 | 1987-03-16 | 電気化学工業株式会社 | Production of aluminum nitride sintered body |
| JPS62105960A (en) * | 1985-10-30 | 1987-05-16 | 株式会社トクヤマ | Manufacture of aluminum nitride sintered body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6428280A (en) | 1989-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |