JPH0573052B2 - - Google Patents
Info
- Publication number
- JPH0573052B2 JPH0573052B2 JP6350285A JP6350285A JPH0573052B2 JP H0573052 B2 JPH0573052 B2 JP H0573052B2 JP 6350285 A JP6350285 A JP 6350285A JP 6350285 A JP6350285 A JP 6350285A JP H0573052 B2 JPH0573052 B2 JP H0573052B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- etching
- lsi
- reaction vessel
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000001182 laser chemical vapour deposition Methods 0.000 claims 1
- 238000012937 correction Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 8
- 125000002524 organometallic group Chemical group 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 iC 4 H 9 ) 3 Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60063502A JPS61224342A (ja) | 1985-03-29 | 1985-03-29 | Ｌｓｉ配線修正方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60063502A JPS61224342A (ja) | 1985-03-29 | 1985-03-29 | Ｌｓｉ配線修正方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61224342A JPS61224342A (ja) | 1986-10-06 |
| JPH0573052B2 true JPH0573052B2 (enrdf_load_html_response) | 1993-10-13 |
Family
ID=13231069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60063502A Granted JPS61224342A (ja) | 1985-03-29 | 1985-03-29 | Ｌｓｉ配線修正方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61224342A (enrdf_load_html_response) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH081928B2 (ja) * | 1986-12-17 | 1996-01-10 | 株式会社日立製作所 | 多層配線の接続配線構造の形成方法 |
| JPH084089B2 (ja) * | 1986-12-22 | 1996-01-17 | 株式会社日立製作所 | Ｉｃ素子並びにｉｃ素子における配線接続方法 |
| JP2594941B2 (ja) * | 1987-05-11 | 1997-03-26 | 株式会社日立製作所 | Ｉｃ配線の接続方法及びその装置 |
| JP2527183B2 (ja) * | 1987-05-20 | 1996-08-21 | 株式会社日立製作所 | 処理方法及び半導体装置の配線修正方法 |
| JPH03253058A (ja) * | 1990-03-01 | 1991-11-12 | Hitachi Ltd | 半導体集積回路の補修方式および半導体集積回路補修システム |
-
1985
- 1985-03-29 JP JP60063502A patent/JPS61224342A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61224342A (ja) | 1986-10-06 |
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